JPH04336470A - Manufacture of semiconductor pressure detection device - Google Patents

Abstract

PURPOSE:To prevent a joint portion between a sensor chip and a glass pedestal from being deviated and water, etc., from being gathered in a semiconductor pressure detection device. CONSTITUTION:A sensor chip is etched after a pedestal and a sensor chip are joined. A rear surface treatment process for etching a wafer 2 is eliminated and at the same time a deviation between a glass pedestal 4 and a pressure- introduction hole 5 is eliminated.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor pressure detection device.

0002

2. Description of the Related Art FIG. 2 shows a part of the assembly flow of a semiconductor pressure sensing device. In FIG. 2a, 1 is a semiconductor pressure sensing element, 2 is a wafer forming this semiconductor pressure sensing element 1, and 3 is a semiconductor A diaphragm formed on the back surface of the pressure sensing element 1 to improve pressure sensitivity; 4 a glass pedestal that relieves external stress from being applied to the semiconductor pressure sensing element 1; 5 a pressure provided on the glass pedestal 4; This is the introduction hole.

The wafer 2 and the glass pedestal 4 as described above are bonded together as shown in FIG. 2B, and then diced into chips to obtain the product shown in FIG.

0004

[Problems to be Solved by the Invention] Since the conventional semiconductor pressure detection device is manufactured as described above, misalignment between the diaphragm 3 and the pressure introduction hole 5 tends to occur, and when the diaphragm 3 is formed, the wafer There were problems such as the need for a backside treatment process.

The present invention has been made to solve the above-mentioned problems, and aims to provide a manufacturing method that eliminates misalignment between the diaphragm and the pressure introduction hole and eliminates the wafer backside processing step. shall be.

[0006]

[Means for Solving the Problems] A method of manufacturing a semiconductor pressure sensing device according to the present invention is such that the wafer of the semiconductor pressure sensing element and the glass pedestal are bonded together, and then the wafer is etched.

[0007]

[Operation] In the method of manufacturing a semiconductor pressure detection device according to the present invention, a diaphragm is formed on the wafer through the first step of bonding the wafer and the glass pedestal and the second step of etching the wafer. No misalignment occurs, and backside processing of the wafer is not required.

[0008]

[Embodiment] FIG. 1 shows the assembly flow of a semiconductor pressure detection device according to an embodiment of the present invention. First, a wafer 2 on which a pressure detection element 1 is formed and a wafer 2 on which a pressure introduction hole 5 is formed are shown. The glass pedestal 4 is joined. This state is shown in Figure 1b.
Shown below. Next, with the wafer 2 and the glass pedestal 4 bonded together, etching is performed to form the diaphragm 3. This situation is shown in Figure 1c.

[0009]

[Effects of the Invention] As described above, according to the present invention, since the wafer and the glass pedestal are etched after being bonded, there is no misalignment between the diaphragm and the pressure introduction hole, and
Since the back surface treatment step during etching is omitted, the device can be made at a lower cost, and it is also possible to obtain a product with high precision.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the flow of a semiconductor pressure detection device according to an embodiment of the present invention.

FIG. 2 is a diagram showing the flow of a conventional semiconductor pressure detection device.

[Explanation of symbols]

1 Semiconductor pressure detection element 2 Wafer 3 Diaphragm 4 Glass pedestal 5 Pressure introduction hole

Claims (1)

[Claims] 1. A device for bonding a wafer of a semiconductor pressure sensing element and a glass pedestal that is attached to relieve stress applied to the semiconductor pressure sensing element from the outside and is provided with a through hole for introducing pressure. . A method for manufacturing a semiconductor pressure sensing device, characterized in that after the wafer of the semiconductor pressure sensing element and the glass pedestal are bonded, the back surface of the wafer is etched to form a diaphragm.