JPH04337532A - 一致状態可変光メモリ材料及びデバイス - Google Patents
一致状態可変光メモリ材料及びデバイスInfo
- Publication number
- JPH04337532A JPH04337532A JP4028559A JP2855992A JPH04337532A JP H04337532 A JPH04337532 A JP H04337532A JP 4028559 A JP4028559 A JP 4028559A JP 2855992 A JP2855992 A JP 2855992A JP H04337532 A JPH04337532 A JP H04337532A
- Authority
- JP
- Japan
- Prior art keywords
- state
- layer
- alloy
- crystalline
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0055—Erasing
- G11B7/00557—Erasing involving phase-change media
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Holo Graphy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Farming Of Fish And Shellfish (AREA)
- Glass Compositions (AREA)
- Vending Machines For Individual Products (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Radiation Pyrometers (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US657170 | 1991-02-15 | ||
| US07/657,170 US5128099A (en) | 1991-02-15 | 1991-02-15 | Congruent state changeable optical memory material and device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001165920A Division JP2002046357A (ja) | 1991-02-15 | 2001-05-31 | 一致状態可変光メモリ材料及びデバイス |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04337532A true JPH04337532A (ja) | 1992-11-25 |
Family
ID=24636116
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4028559A Pending JPH04337532A (ja) | 1991-02-15 | 1992-02-14 | 一致状態可変光メモリ材料及びデバイス |
| JP2001165920A Pending JP2002046357A (ja) | 1991-02-15 | 2001-05-31 | 一致状態可変光メモリ材料及びデバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001165920A Pending JP2002046357A (ja) | 1991-02-15 | 2001-05-31 | 一致状態可変光メモリ材料及びデバイス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5128099A (2) |
| EP (2) | EP0951011A1 (2) |
| JP (2) | JPH04337532A (2) |
| KR (1) | KR100245901B1 (2) |
| AT (1) | ATE227878T1 (2) |
| CA (1) | CA2061187C (2) |
| DE (1) | DE69232844T2 (2) |
| TW (1) | TW279903B (2) |
Families Citing this family (106)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233599A (en) * | 1990-03-14 | 1993-08-03 | Matsushita Electric Industrial Co., Ltd. | Optical disk with a recording layer composed of tellurium, antimony, and germanium |
| JP2556183B2 (ja) * | 1990-09-11 | 1996-11-20 | 富士ゼロックス株式会社 | 光学的記録方法とこの方法を用いる光記録媒体 |
| JPH07141693A (ja) * | 1993-09-22 | 1995-06-02 | Toshiba Corp | 情報記録媒体 |
| US5458941A (en) * | 1994-06-09 | 1995-10-17 | Minnesota Mining And Manufacturing Company | Optical recording medium exhibiting eutectic phase equilbria |
| WO1996011471A1 (fr) * | 1994-10-05 | 1996-04-18 | Asahi Kasei Kogyo Kabushiki Kaisha | Disque optique a mode de changement de phase et son procede de fabrication |
| US5583734A (en) * | 1994-11-10 | 1996-12-10 | Raychem Corporation | Surge arrester with overvoltage sensitive grounding switch |
| US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
| KR20040020072A (ko) * | 1996-03-11 | 2004-03-06 | 마츠시타 덴끼 산교 가부시키가이샤 | 광학적 정보 기록매체와 그 제조방법 및 기록 재생 소거방법 |
| ES2201474T3 (es) | 1997-04-16 | 2004-03-16 | Asahi Kasei Kabushiki Kaisha | Procedimiento para la produccion de un medio de registro de informacion optica y medio de registro de informacion optica producido por el proceso. |
| US6503690B1 (en) * | 1997-08-12 | 2003-01-07 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the same, and method for recording and reproducing optical information |
| JPH11134720A (ja) | 1997-08-28 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体及びその記録再生方法 |
| US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
| TW448443B (en) * | 1998-08-05 | 2001-08-01 | Matsushita Electric Industrial Co Ltd | Optical information storage media and production method as well as the storage reproducing method and device |
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| TW484126B (en) * | 1999-03-26 | 2002-04-21 | Matsushita Electric Industrial Co Ltd | Manufacturing and recording regeneration method for information record medium |
| US6580683B1 (en) | 1999-06-23 | 2003-06-17 | Dataplay, Inc. | Optical recording medium having a master data area and a writeable data area |
| US7227817B1 (en) | 1999-12-07 | 2007-06-05 | Dphi Acquisitions, Inc. | Low profile optical head |
| US7191153B1 (en) | 1999-09-10 | 2007-03-13 | Dphi Acquisitions, Inc. | Content distribution method and apparatus |
| US6631359B1 (en) | 1999-09-10 | 2003-10-07 | Dphi Acquisitions, Inc. | Writeable medium access control using a medium writeable area |
| US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
| US6727192B2 (en) * | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
| US6734455B2 (en) | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
| US7102150B2 (en) * | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
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| US6955940B2 (en) | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
| US6881623B2 (en) | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
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| US8467236B2 (en) | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
| GB202009151D0 (en) | 2020-06-16 | 2020-07-29 | Univ Oxford Innovation Ltd | Optical waveguide and devices |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3816108A (en) * | 1971-12-22 | 1974-06-11 | Nippon Telegraph & Telephone | Semiconductor granules for use in acoustic-electro converting devices |
| CH622380A5 (2) * | 1977-12-21 | 1981-03-31 | Bbc Brown Boveri & Cie | |
| DE3483448D1 (de) * | 1983-08-24 | 1990-11-29 | Hitachi Ltd | Aufzeichnungsmaterial. |
| US4820394A (en) * | 1984-11-21 | 1989-04-11 | Energy Conversion Devices, Inc. | Phase changeable material |
| US4653024A (en) * | 1984-11-21 | 1987-03-24 | Energy Conversion Devices, Inc. | Data storage device including a phase changeable material |
| CN1008845B (zh) * | 1984-12-05 | 1990-07-18 | 富士通株式会社 | 光学信息记录介质及信息的记录与擦抹的方法 |
| US4744055A (en) * | 1985-07-08 | 1988-05-10 | Energy Conversion Devices, Inc. | Erasure means and data storage system incorporating improved erasure means |
| CN1010519B (zh) * | 1985-09-25 | 1990-11-21 | 松下电器产业株式会社 | 可逆的光学情报记录介质 |
| JPS62183042A (ja) * | 1986-02-06 | 1987-08-11 | Toshiba Corp | 情報記録再生方法 |
| US4924436A (en) * | 1987-06-22 | 1990-05-08 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite |
| EP0392179B1 (en) * | 1989-02-28 | 1995-11-08 | Fuji Xerox Co., Ltd. | Optical recording medium |
| DE69023786T2 (de) * | 1989-03-17 | 1996-06-13 | Fuji Xerox Co Ltd | Optischer Aufzeichnungsträger. |
| US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
-
1991
- 1991-02-15 US US07/657,170 patent/US5128099A/en not_active Expired - Lifetime
-
1992
- 1992-02-13 CA CA002061187A patent/CA2061187C/en not_active Expired - Fee Related
- 1992-02-14 EP EP99108310A patent/EP0951011A1/en not_active Withdrawn
- 1992-02-14 DE DE69232844T patent/DE69232844T2/de not_active Expired - Fee Related
- 1992-02-14 AT AT92102513T patent/ATE227878T1/de not_active IP Right Cessation
- 1992-02-14 JP JP4028559A patent/JPH04337532A/ja active Pending
- 1992-02-14 EP EP92102513A patent/EP0499273B1/en not_active Expired - Lifetime
- 1992-02-15 KR KR1019920002269A patent/KR100245901B1/ko not_active Expired - Lifetime
- 1992-07-02 TW TW081105245A patent/TW279903B/zh not_active IP Right Cessation
-
2001
- 2001-05-31 JP JP2001165920A patent/JP2002046357A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW279903B (2) | 1996-07-01 |
| US5128099A (en) | 1992-07-07 |
| CA2061187A1 (en) | 1992-08-16 |
| EP0499273A2 (en) | 1992-08-19 |
| CA2061187C (en) | 1998-11-17 |
| DE69232844D1 (de) | 2002-12-19 |
| JP2002046357A (ja) | 2002-02-12 |
| EP0951011A1 (en) | 1999-10-20 |
| ATE227878T1 (de) | 2002-11-15 |
| EP0499273B1 (en) | 2002-11-13 |
| KR100245901B1 (ko) | 2000-03-02 |
| EP0499273A3 (en) | 1994-06-01 |
| DE69232844T2 (de) | 2003-09-04 |
| KR920017045A (ko) | 1992-09-26 |
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