JPH04350171A - Method and device for forming deposited film by microwave plasma cvd device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention is directed to depositing a film on a substrate, especially a functional film, especially an amorphous semiconductor film used for semiconductor devices, electrophotographic devices, line sensors for image input, imaging devices, photovoltaic devices, etc. The present invention relates to a film forming method and a film forming apparatus using a microwave plasma CVD apparatus.

0002

[Prior Art] Conventionally, amorphous silicon, such as hydrogen or / and halogen (e.g. fluorine, chlorine, etc.) compensated amorphous silicon (hereinafter referred to as “a-
It is abbreviated as “Si(H,X)”. ) and other amorphous materials are proposed for use in semiconductors.

[0003] Such deposited films are deposited using the plasma CVD method, in which raw material gas is decomposed by direct current, high frequency, or microwave glow discharge, and thin films are deposited on substrates made of materials such as glass, quartz, heat-resistant synthetic resin films, stainless steel, and aluminum. It is known to be formed by a method of forming a deposited film of the type, and various apparatuses for this purpose have also been proposed.

[0004]In recent years, plasma CVD methods using microwave glow discharge decomposition have attracted attention, and research into industrial use has been conducted.For example, USP 45045
No. 18 describes a microwave plasma CVD method and its apparatus suitable for forming an amorphous semiconductor.

Furthermore, Japanese Patent Application Laid-Open No. 61-283116 describes an improved microwave plasma CVD method and its apparatus, in which a bias voltage is applied in the plasma space to control the plasma while depositing a semiconductor film. form,
A method for improving the properties of deposited films is described.

[0006] Such known microwave plasma CVD
A deposited film forming apparatus using this method typically has the configuration shown in the schematic diagram of FIG. In FIG. 2, (A) is a schematic longitudinal cross-sectional view, (B) is a cross-sectional view taken along line XX,
201 is a reaction vessel, which has a vacuum-tight structure. 202 is a dielectric window made of a material that can efficiently transmit microwave power into the reaction vessel and maintain vacuum tightness, such as quartz glass or alumina ceramics; 202 and 203 constitute a microwave introducing section. are doing. Further, a device having a similar configuration is installed at a position opposite to 202. 204 has one end as vacuum container 2
01, and the other end thereof is an exhaust pipe that communicates with an exhaust device (not shown). 205 is a substrate for forming a deposited film, and 206 is a discharge space.

Reference numeral 207 is a heater for heating the base 205 to a predetermined temperature. Reference numeral 208 denotes a gas supply pipe for introducing gas as a raw material for the deposited film into the reaction vessel, which is connected to a raw material gas cylinder via a flow rate controller (not shown), and has a plurality of openings in the supply pipe. This is a gas discharge nozzle for uniformly discharging gas, and also serves as a bias electrode for applying a bias voltage within the discharge space, and is connected to a bias power source 209. However, it is assumed that the electrode 208 is completely insulated from the reactor 201. Further, 210 is a rotation shaft for rotating the support body 211 and the base body 205 for the purpose of uniformizing the deposited film on the cylindrical base body, and is connected to a motor 212 via a gear. Formation of a deposited film using such a conventional deposited film forming apparatus is performed as follows.

[0008] A substrate 205 is placed inside a reaction vessel 201 . That is, the inside of the vacuum vessel is evacuated using a vacuum pump (not shown), the internal pressure of the reaction vessel is adjusted to 1 x 10-6 Torr or less, and then the heater 207 built in the substrate holder 211 is energized to raise the temperature of the substrate. Heat and maintain at a temperature suitable for film deposition. For example, in the case of forming an amorphous silicon deposited film, a source gas such as silane gas (SiH4) is introduced into the reaction vessel via the source gas supply pipe 208. At the same time, a microwave power source (not shown) is energized to generate a frequency of 500 MHz or more, preferably 2
．． A microwave of 45 GHz is generated and microwave energy is introduced into the reaction vessel 201 through the waveguide 203 and the dielectric window 202 . At this time, microwave energy is similarly introduced into the microwave introduction section installed at a position opposite to the bias power supply 202.
9 and bias electrode 208 to DC or AC or R.
Apply a voltage of F. Thus, the gas in the reaction vessel 201 is excited by the macrowave energy and dissociated, and at the same time, the plasma potential is controlled by the bias electrode 208, and a deposited film is formed on the substrate surface.

By using the apparatus and method as described above, it has become possible to produce a relatively thick functional deposited film at a relatively high deposition rate.

0010

[Problems to be Solved by the Invention] However, according to the studies of the present inventors, even with the above-mentioned improved technology, when film formation is performed at a higher deposition rate, the resulting product has the following problems: It has become clear that there are issues such as:

In recent years, improvements have been made to the optical exposure system, developing device, transfer device, etc. in electrophotographic devices in order to improve the image characteristics of electrophotographic devices. There is now a need for improved characteristics. In particular, as the resolution of images has improved, there has been a need to reduce image defects in the form of black dots or white dots, and in particular to reduce image defects of minute size, which have not been much of a problem in the past. In particular, most of the causes of image defects are due to continuous film formation, which causes the film deposited in the furnace to become thick, peel off, scatter, adhere to the substrate, and cause abnormal growth of the film called spherical protrusions. It is thought that one of the causes is that In addition, when forming a deposited film at high speed on a large-area substrate such as an electrophotographic photosensitive drum due to quality requirements, it is necessary to provide an electrode in the discharge space and apply a voltage to this electrode for the purpose of controlling the plasma potential. is important. However, when an electric field is applied in the discharge space in this way, the number of defects in the deposited film that causes image defects increases rapidly depending on the voltage. In addition, if the deposited film formation takes a long time, fluctuations in the microwave energy, etc.
Since the plasma resistance changes, the effect of plasma potential control on the substrate also changes over time. Therefore, with conventional methods, it has been difficult to uniformly and stably deposit a deposited film with good electrical characteristics and few defects even over a large area at a high speed. Therefore, it is very important to reduce the number of occurrences of abnormal film growth and to form a continuous and uniform deposited film in a more stable state.

It is also known that when a large number of images are formed continuously, image defects increase compared to the initial image.

One of the causes of this is the presence of abnormal growth on the surface of the light-receiving member, which may damage the cleaning blade during repeated image formation in large quantities.
In addition to causing poor cleaning and lowering the image quality, the scattering of residual toner on the separation charger causes toner to accumulate on the charging wire, which tends to induce abnormal discharge. This may cause "defects" to occur.

[0014]Furthermore, the rubbing of the light-receiving member against the transfer paper or the cleaning blade causes the abnormally grown portion to be missing, which also causes an increase in image defects.

In addition, abnormal growth tends to wear out the separation claw for separating the transfer paper from the light-receiving member, and the transfer paper is likely to become jammed due to poor separation.

Therefore, from the viewpoint of the durability of the image forming apparatus, it is necessary to maintain good electrical properties and photoconductive properties in light-receiving members for electrophotography while preventing the occurrence of abnormal growth that causes image defects. There is a need to prevent this and significantly extend durability in all environments.

[0017] The present invention applies to conventional microwave plasma CV
By overcoming the above-mentioned problems in the apparatus for forming a deposited film on a substrate by method D, it is possible to form a homogeneous, high-quality film with few defects at high speed, efficiently, and stably with less variation between lots. An object of the present invention is to provide a method for forming a deposited film and an apparatus for the same.

[0018]

[Means for Solving the Problems] As a result of intensive research to overcome the above-mentioned problems with conventional devices, the present inventors obtained the following knowledge and completed the present invention.

In order to rapidly obtain a stable, uniform, and high-quality deposited film with few defects using a microwave plasma CVD apparatus, an outer wall is formed between the discharge space and the substrate, and as this outer wall moves, a By reducing the deposition of this film, it is possible to prevent the deposited film on the outer wall from becoming thicker, peeling off, and scattering onto the substrate, and to reduce abnormal growth of the deposited film. In addition, since the deposition rate is fast in the microwave plasma CVD method, an electric field is applied inside the discharge space to compensate for the energy required for desorption of excess hydrogen atoms and rearrangement of silicon atoms, which is insufficient due to the temperature of the substrate alone. Since it is essential to accelerate the ions to collide with the substrate and locally anneal the deposited film, an electrode is provided in the discharge space and a voltage is applied to this electrode for the purpose of controlling the plasma potential. At this time, the voltage applied to the electrode contributes to improving the characteristics of the deposited film only when it has a positive voltage component with respect to the substrate.

However, when a direct current electric field is applied in the discharge space in this manner, defects in the deposited film that cause image defects etc. increase rapidly depending on the voltage. When the cross-sections of these defects were observed under a microscope, it was confirmed that spherical protrusions were growing from the middle of the deposited film with foreign particles ranging in size from several microns to several tens of microns as nuclei. When the DC voltage applied to the electrodes is increased in order to improve the electrical properties of the deposited film, the number of microscopic foreign particles that cause defects in the deposited film rapidly increases. The mechanism of this phenomenon is that ions are not only accelerated by the electric field between the electrode and the substrate and collide with the substrate, but also minute fragments of the deposited film that have peeled off from the deposition furnace wall and substrate are charged up by the plasma.
It is conceivable that, like in the case of ions, they adhere to a substrate that is accelerated by an electric field. Therefore, we have found that it is possible to reduce these factors by attaching the charged-up membrane pieces to a place other than the substrate or by absorbing the ones attached to the substrate.

[0021] In order to simultaneously satisfy the two conflicting objectives of improving the properties of the deposited film and reducing defects in the deposited film, the present invention provides means for removing charged-up foreign matter adhering to the substrate outside the discharge space. It was completed by this.

[0022] The method of the present invention, which achieves the above-mentioned effects, will be explained in detail below with reference to the drawings.

FIG. 1 shows the microwave plasma CVD of the present invention.
It is a diagram showing a preferable example of a typical device, (
A) is a schematic longitudinal cross-sectional view, and (B) is a cross-sectional view taken along line XX. In FIG. 1, 101 is a reaction vessel, which has a vacuum-tight structure. Reference numeral 102 denotes a dielectric window made of a material that can efficiently transmit microwave power into the reaction vessel and maintain vacuum tightness, such as quartz glass or alumina ceramics. 103 is a microwave transmission section mainly composed of a metal waveguide,
It is connected to a microwave power source (not shown) via a matching box isolator. Also, a similar mechanism is installed at a position opposite to 102 and 103. Reference numeral 104 is an exhaust pipe whose one end opens into the vacuum container 101 and whose other end communicates with an exhaust device (not shown). 105
1 is a substrate for forming a deposited film, 106 indicates a discharge space, and 107 is a heater for heating the substrate 105 to a predetermined temperature. Reference numeral 108 denotes a gas supply pipe for introducing the raw material gas for the deposited film into the reaction vessel, which is connected to the raw material gas cylinder via a flow rate controller (not shown), and has a plurality of openings on the supply pipe. A gas discharge nozzle is provided for discharging gas uniformly, and also serves as an electrode for applying a bias voltage within the discharge space.
Connected to 09. However, the electrode is the reaction vessel 10.
It is assumed that it is completely insulated from 1. 110 is a support 111 for the purpose of uniformly depositing the film on the cylindrical substrate.
, is a rotation shaft for rotating the base body 105, and is connected to the motor 112 via a gear. Reference numeral 113 denotes a band-shaped member of the present invention, which moves while surrounding the base 105 and the discharge space 106 by a rotating mechanism (not shown). Reference numeral 114 is a part of the support for the band member, and also has a rotation mechanism (not shown). 115 is a heater for heating the strip member. 116 is the strip member 11
This is a power supply for applying voltage to 3.

The above is an example of the basic device configuration of the present invention. A deposited film forming method using the film forming apparatus of the present invention is performed, for example, by the following procedure.

First, the substrate 105 is placed inside the reaction vessel 101. Next, the inside of the reaction vessel is evacuated to a vacuum level of 1×10 −6 Torr through the exhaust pipe 104 using a vacuum pump (not shown). Next, the heater 107 is turned on and the base 105 is heated to a predetermined temperature while being rotated by the external motor 112. When the temperature of the substrate becomes constant at a predetermined value, gas that will be a raw material for the film is introduced into the reaction vessel through the gas supply pipe 108. When the gas flow rate becomes stable, adjust the exhaust valve (not shown) and adjust the pressure inside the reaction vessel to a predetermined value while observing the vacuum gauge (not shown). After the above preparations are completed, a microwave power supply (not shown) is energized to generate microwaves, and the microwave power is transmitted upward and downward through the dielectric window 102 through the microwave introduction section, that is, the waveguide 103. The gas is introduced into the reaction vessel via the waveguide 103 and the dielectric window 102, and glow discharge plasma originating from the source gas is formed in the discharge space 106. At the same time, the bias power supply 109, whose voltage has been set in advance to a predetermined voltage, is turned on, and the electrode 109 is turned on.
A predetermined voltage is applied to 8.

A deposited film is formed on the substrate 105 while the plasma potential is controlled in this manner. This state is maintained for a certain period of time to obtain a deposited film of a predetermined thickness.

In the present invention, by moving the strip member 113 as an outer wall with respect to the discharge space and the base, the thickness of the film deposited on the outer wall can be reduced, so that the phenomenon of film peeling is less likely to occur. It is possible to reduce scattering onto the substrate and prevent abnormal growth of the deposited film on the substrate.

In a preferred state, the thickness of the film deposited on the surface of the strip member 113, which is the outer wall, is about 0.1 to 5 μm. This effect is further enhanced by roughening the surface of the strip member 113 facing the substrate and the discharge space, thereby improving the adhesion of the deposited film and avoiding contamination of the substrate by peeled film pieces. A preferable surface roughness is 2.0 seconds or more, which can further improve the adhesion of the film. On the other hand, the effect can be further enhanced by heating the strip member 113. Furthermore, by forming the structure so as to surround the base body and the discharge space, the plasma can be kept in a stable state, and at the same time, a negative voltage is applied to the strip member 113 to absorb the film fragments of the charged-up deposited film. This makes it possible to supplement the energy necessary for improving film quality without increasing defects in the deposited film, and to obtain a deposited film of better quality.

In the present invention, the shape of the strip member 113 has a width at least larger than the longitudinal direction of the base body 105.
Any shape may be used as long as it surrounds the discharge space 106. For example, a plurality of mutually independent band-like members may be connected to surround the base body 105. More preferably, a band-like member as one member that can cover the entire area in the vertical direction of the reactor (ie, in the longitudinal direction of the substrate) is optimal. There is no particular restriction on the thickness of the strip member 113.

Further, the distance between the base body 105 and the strip member 113 is preferably within 50 cm, more preferably between 1 and 30 cm.
cm is considered optimal. If you get close to it, it will be more susceptible to the effects of plasma, which may cause it to peel off, scatter, or cause abnormal electrical discharge. Moreover, if the distance is too far, the effect will be insufficient.

The moving speed of the band member 113 is not particularly limited, and may be set in consideration of running costs, etc.
The preferred practical range is about 50 to 300 cm/min.

[0032] The material of the band member is stainless steel or Al.
, Cl, MO, Au, In, Nb, Ni, Cu, Ag.
Metals such as Te, Pt, Pd, Fe, Zn, and W, alloys thereof, synthetic resins such as polycarbonate whose surfaces are conductively treated, glass, ceramics, paper, and the like are usually used in the present invention.

In the present invention, raw material gases for the deposited film include, for example, amorphous silicon forming raw material gases such as silane (SiH4) and disilane (Si2H6), germane (GeH6), etc.
4), other functional deposited film forming raw material gases such as methane (CH4), or mixed gases thereof. Diluent gases include hydrogen (H2), argon (Ar), and helium (H2).
e) etc. In addition, nitrogen (N2),
Elements containing nitrogen atoms such as ammonia (NH3), oxygen (
O2), nitrogen oxide (NO), dinitrogen oxide (N2O), and other elements containing oxygen atoms, methane (CH4), ethane (C2H
6), ethylene (C2H4), acetylene (C2H2)
, hydrocarbons such as propane (C3H8), fluorides such as silicon tetrafluoride (SiF4), silicon hexafluoride (Si2F6), germanium tetrafluoride (GeF4), or mixed gases thereof.

In addition, diborane (
B2H6), boron fluoride (BF3), phosphine (P
The present invention is equally effective even if a dopant gas such as H3) is simultaneously introduced into the discharge space.

[0035] Examples of the base material include stainless steel,...
Al, Cl, Mo, Au, In, Nb, Ni, Cu, A
In the present invention, metals such as G, Te, Pt, Pd, Fe, Zn, and W, alloys thereof, synthetic resins such as polycarbonate whose surfaces are subjected to conductive treatment, glass, ceramics, paper, and the like are usually used.

At this time, the material of the microwave introduction window into the furnace may be alumina, aluminum nitride, boron nitride,
Materials with low microwave loss, such as silicon nitride, silicon carbide, silicon oxide, beryllium oxide, Teflon, and polystyrene, are usually used.

The present invention is applicable to photoconductors for copiers or printers such as blocking type amorphous silicon photoconductors and high resistance amorphous silicon photoconductors, as well as any other photoconductors that require a functional deposited film with good electrical properties. It can also be applied to device fabrication.

[0038] The substrate temperature during the formation of the deposited film in the present invention is effective at any temperature, but in particular, from 20°C to 500°C,
Preferably, the temperature is 50° C. or more and 450° C. or less because good effects are exhibited. Also, when heating the strip member, it is desirable to heat the strip member to a temperature equal to or higher than the substrate temperature in order to obtain good results.

The voltage applied to the bias electrode may be DC, AC, or a combination of DC and AC as long as it contains a positive voltage component with respect to the substrate. In the case of direct current, the voltage applied to the bias electrode is suitably 15 V or more and 300 V or less, preferably 30 V or more and 200 V or less.

[0040] If an alternating current component is included, there is no problem with any frequency and waveform. The voltage may be any voltage as long as it contains a positive voltage component and can accelerate ions toward the substrate, but is generally preferably 30 V or more and 600 V or less.

The bias electrode may be made of any material as long as its surface is conductive, such as stainless steel, Al, Cl, Mo, Au, In, Nb, Ni,
Metals such as Cu, Ag, Te, Pt, Pd, Fe, Zn, and W, alloys thereof, synthetic resins such as polycarbonate whose surfaces have been subjected to conductive treatment, glass ceramics, paper, and the like are normally used in the present invention.

The voltage applied to the strip member may be DC, AC, or a combination of DC and AC, as long as it contains a negative voltage component with respect to the base. If the applied voltage is too low, it will not be effective in reducing defects, and if it is too high, abnormal discharge will occur from the strip member to the substrate, causing a decrease in the quality of the deposited film and an increase in defects.

In the case of direct current, the voltage applied to the strip member is -
3000V or more and -50V or less, preferably -2000V
More than -100V is suitable.

When an alternating current component is included, there is no problem with any frequency and waveform. The voltage may be any voltage as long as it contains a negative voltage component and can accelerate ions toward the substrate, but is generally preferably -60,000 V or more and -200 V or less.

[0045] In the present invention, microwaves can be introduced into the reactor by using a waveguide or a coaxial cable, and the microwave can be introduced into the reactor through one or more dielectric windows, or through one or more dielectric windows. One method is to install an antenna inside the furnace.

[0046]

EXAMPLES A method of manufacturing an electrophotographic photoreceptor using the microwave plasma CVD method of the present invention will be explained together with a comparative example using a conventional method. Note that the present invention is not limited to these examples.

Examples and Comparative Examples Using the microwave plasma CVD apparatus shown in FIG. 1 and the conventional microwave plasma CVD apparatus shown in FIG. A photosensitive drum consisting of a charge injection blocking layer, a photoconductive layer and a surface protective layer was prepared under the conditions shown in Table 1 above. As the microwave power source, an oscillator with a maximum of 5 kW and 2.45 GHz was used, and a heating heater 107 was used to heat the substrate, and the substrate was heated and maintained at 250° C. while rotating. In Example 1, a belt-shaped member (made of stainless steel, thickness 1.5 mm, base side surface roughness 3.0 s) was moved. The width of the strip member is 450 mm, and the shortest distance from the base is 20 cm. Further, a voltage of -100V was applied to the strip member.

[0048]

[Table 1] Under these conditions, the following evaluation was performed on 200 lots of photosensitive drums prepared while maintaining the degree of vacuum in the furnace and without cleaning the inside of the furnace.

(Evaluation) The surface of the prepared photoreceptor was observed under a microscope, and the number of abnormally grown deposited films with a diameter of more than 20 μm was counted within a certain area (10 cm2). A relative comparison was made when the number of pieces at the time of lot creation was set as 100%.

The above comprehensive evaluation is shown in FIG. As seen in FIG. 3, remarkable effects were obtained even at the start of continuous film formation, and good results were obtained even after that, with no increase in the number of abnormal growths.

Examples 2 and 3 Using the microwave plasma CVD apparatus of the present invention shown in FIG. 1 and used in Example 1, in Example 2, the surface roughness of the strip member on the base and discharge space side was 2.0 seconds or more, and in Example 3, the light-receiving layer was heated under the same conditions and operating method as in Example 1, except that the band-shaped member of Example 2 was heated to a temperature of 300° C. using the heating means 114. A photosensitive drum for electrophotography was prepared. The results are shown in FIG. 3 together with Comparative Example 1. As is clear from FIG. 3, good results were always obtained using the microwave plasma CVD apparatus of the present invention, and more significant effects appeared by roughening and heating the surface.

Example 4 The same strip member as in Example 3 was used in the microwave plasma CVD apparatus of the present invention used in Example 1 shown in FIG.
When a negative voltage was applied to the strip member and the voltage was varied, the relationship between the number of image defects on the photosensitive drum, the occurrence of abnormal discharge, and the voltage applied to the strip member was investigated. The results are shown in Table 2.

[0053]

[Table 2] However, the evaluation is as follows *Image defect: × Problem △ No problem in practical use ○ Good ◎ Particularly good At any value, the electrical characteristics of the deposited film on the substrate 105 reached the level of a product, and an image with good contrast was obtained.

Note that the comparative examples and examples of the present invention all describe cases where the substrate is grounded and a voltage is applied to the electrodes (including the bias electrode and the strip member); It has been confirmed that exactly the same results can be obtained no matter which one is grounded as long as the electrical relationships between the two are the same, or even if the substrate and all electrodes are separated from the ground.

As is clear from Table 2, application of excessive voltage has the opposite effect, and good results can be obtained by applying an appropriate voltage.

Example 5 Using the microwave plasma CVD apparatus of the present invention used in Example 3 shown in FIG. 1, the formation of a photoreceptive layer was evaluated under the same conditions and operations as in Example 1. The 200th lot photosensitive drum was installed in a Canon copier NP6650 that had been modified for durability, and a durability test was carried out.The number of sheets listed in Tables 3 and 4 was taken out from the separating claws and separated from the photosensitive drums. Table 3 shows the results of microscopic observation of the degree of wear on the separation claw side at the contact point, and Table 4 shows the increase rate of image defects during durability.

[0057]

[Table 3] ◎: Particularly good ○: Good △: No problem in practical use

[0058]

[Table 4] ◎: Particularly good ○: Good △: No problem in practical use As is clear from Tables 3 and 4, the separation claws have very little wear and tear, and are highly durable and work more effectively. I understand.

Example 6 Using the microwave plasma CVD apparatus of the present invention used in Example 1 shown in FIG. 1, the formation of a photoreceptive layer was evaluated under the same conditions and operations as in Example 1. The film thickness of photosensitive drums produced in the same lot, and
Figure 4 shows the results of comparing the relative values of variations in potential characteristics.
and shown in FIG.

As is clear from FIGS. 4 and 5, good results were obtained in that uniform photoreceptors with little variation were formed even between the same lots.

As explained above, the copying machine using the photosensitive drum produced by the microwave plasma CVD apparatus according to the present invention has high image gradation, and can obtain good image quality with high durability. be able to.

[0062]

Effects of the Invention As explained above, in the present invention, the effects of providing the strip member and applying a voltage are as follows.

(1) As the band-like member forming the outer wall moves, the thickness of the film deposited on the outer wall is reduced, and this prevents the film from peeling off, reducing the amount directly scattered to the substrate and preventing abnormal growth of the film. can be reduced. As a result, it is possible to significantly reduce image defects in the resulting electrophotographic light-receiving member. Furthermore, by applying a negative voltage to the strip member, it is possible to increase the bias voltage and improve the potential characteristics, and at the same time, by removing the charged-up film fragments, it is possible to further reduce abnormal film growth. Ta.

In particular, a remarkable effect can be obtained by making the surface roughness of the base and discharge space side of the strip member 2.0 seconds or more, and an even more remarkable effect can be obtained by further heating the strip member. .

(2) Since the strip member is installed so as to surround the substrate, it is possible to reduce unevenness in film thickness and unevenness in potential characteristics between photoreceptors deposited and formed in the same lot.

(3) In image formation using the electrophotographic light-receiving member obtained by the apparatus of the present invention, durability against abrasion, particularly of the separating claw in the electrophotographic apparatus used, is improved. Furthermore, it becomes possible to significantly reduce image defects due to abnormal growth.

(4) Microwave plasma CVD of the present invention
According to the device, it is compatible with higher speed copying machines and smaller diameter photoreceptors, and has a wide latitude in setting the position of the charger and developer.
It becomes possible to produce extremely easy-to-use photosensitive drums at low cost, at high speed, and in large quantities.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing an example of a microwave plasma CVD apparatus according to the present invention, in which (A) is a longitudinal cross-sectional view and (B) is a cross-sectional view taken along the XX plane.

FIG. 2 is a schematic diagram showing an example of a conventional microwave plasma CVD apparatus, in which (A) is a longitudinal cross-sectional view, and (B) is a cross-sectional view taken along the XX plane.

FIG. 3 is a graph showing the number ratio of abnormal growth in deposited films formed in Examples 1, 2, and 3 and Comparative Example 1;

4 is a graph showing variations in film thickness of deposited films formed in Example 6 and Comparative Example 1. FIG.

5 is a graph showing variations in potential characteristics of deposited films formed in Example 6 and Comparative Example 1. FIG.

[Explanation of symbols]

101,210 reaction vessel, 102,202 dielectric window 103,203 waveguide 104,204 exhaust port 105,205 base 106,206 discharge space 107,207 heating heater 108,208
Gas discharge tube and voltage application electrode 109, 209
Power supply for voltage application 110, 210 Rotating shaft 111, 211 Support body 113 Band-shaped member 114 Part of support body 115 of the band-shaped member
Heater 116 for heating the strip member Power source for voltage application

Claims (6)

[Claims] 1. A base body is installed so as to surround a discharge space formed in a vacuum-tight reaction vessel, a raw material gas for forming a deposited film and microwave energy are introduced into the discharge space, and the introduced microwave energy is to generate a glow discharge plasma, and to control the plasma potential by providing an electrode in the discharge space where the plasma is formed, applying a voltage to the electrode to the substrate to form a deposited film on the substrate. In a microwave plasma CVD apparatus that
A continuously movable strip member forms an outer wall with respect to the base and the discharge space, and the deposited film is formed while applying voltage to the strip member so as to create an electric field between the base and the base. A method for forming a deposited film. 2. A method according to claim 1, characterized in that the continuously movable strip is heated. 3. The method according to claim 1, wherein the surface roughness of the continuously movable strip member on the side facing the substrate and the discharge space is set to 2.0 seconds or more. 4. A cylindrical substrate is installed so as to surround a discharge space formed in a vacuum-tight reaction vessel, and at least a source gas for forming a deposited film, a means for introducing microwave energy, and a means for applying a voltage are provided in the discharge space. A microwave plasma CVD apparatus comprising: a continuously movable strip member disposed to form an outer wall with respect to the base body and the discharge space, and capable of generating an electric field between the base body and the strip member; A microwave plasma CVD apparatus characterized by being provided with voltage application means. 5. The device according to claim 4, further comprising means for heating the continuously movable strip. 6. The apparatus according to claim 4, wherein the continuously movable strip member has a surface roughness of 2.0 seconds or more on the side facing the substrate and the discharge space.