JPH04355331A - Pyroelectric two-dimensional array infrared sensor - Google Patents

Pyroelectric two-dimensional array infrared sensor

Info

Publication number
JPH04355331A
JPH04355331A JP3131379A JP13137991A JPH04355331A JP H04355331 A JPH04355331 A JP H04355331A JP 3131379 A JP3131379 A JP 3131379A JP 13137991 A JP13137991 A JP 13137991A JP H04355331 A JPH04355331 A JP H04355331A
Authority
JP
Japan
Prior art keywords
dimensional array
pyroelectric
infrared
infrared sensor
array infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3131379A
Other languages
Japanese (ja)
Inventor
Kunio Nakamura
中村 邦雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3131379A priority Critical patent/JPH04355331A/en
Publication of JPH04355331A publication Critical patent/JPH04355331A/en
Pending legal-status Critical Current

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  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To enable piezoelectric noise which is peculiar to a pyroelectric element to be eliminated and achieve a heat infrared camera, etc., by a simple and highly sensitive two-dimensional array element which does not require any cooling for a pyroelectric-type two-dimensional array infrared sensor which is used for a heat infrared measurement. CONSTITUTION:A two-dimensional array pyroelectric element 11 is set to an infrared-rays incidence side and a similar element 12 is set to a position which is not irradiated by infrared-rays as a dummy. A CCD chip 15 for reading signal is combined to each by an indium bump 14 and is placed on both surfaces of a substrate 13, thus enabling vibrations from an outside which are propagated through the substrate to have equal frequency, amplitude, and phase. Also, both CCDs 15 are driven by the same clock 16, both outputs 17 are amplified by a buffer amplifier 18 and are input to a differential amplifier 19, and a difference between both is output, thus obtaining a high-sensitive pyroelectric two-dimensional array infrared sensor where a piezoelectric noise due to vibration from the outside is greatly reduced.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、物体の温度分布、赤外
放射分布を2次元の電気信号に変換し、可視像に変換で
きる赤外カメラに用いられる焦電形2次元アレイ赤外セ
ンサに関するものである。
[Industrial Application Field] The present invention is a pyroelectric two-dimensional array infrared camera used in an infrared camera that can convert the temperature distribution and infrared radiation distribution of an object into two-dimensional electrical signals and convert them into visible images. It is related to sensors.

【0002】0002

【従来の技術】最近、赤外センサは製品の熱管理工程、
夜間監視、防災、防犯等で利用されるようになってきた
。これらのセンサは、1点のみを測定するポイント型か
ら、1次元分布を一度に測定できる1次元アレイ型、さ
らに2次元アレイ型と発展してきた。この2次元赤外セ
ンサには、赤外検出素子として焦電素子が最も多く用い
られているが、該素子は圧電雑音を出すので、ダミ−素
子と組み合せてその雑音を消去する方法がとられている
[Prior Art] Recently, infrared sensors have been used in the thermal management process of products.
It has come to be used for night surveillance, disaster prevention, crime prevention, etc. These sensors have evolved from a point type that measures only one point, to a one-dimensional array type that can measure a one-dimensional distribution at once, and then to a two-dimensional array type. In these two-dimensional infrared sensors, a pyroelectric element is most often used as an infrared detection element, but since this element generates piezoelectric noise, a method is used to eliminate that noise by combining it with a dummy element. ing.

【0003】以下、図4を参照して従来の焦電形2次元
アレイ赤外センサについて説明する。
A conventional pyroelectric two-dimensional array infrared sensor will be described below with reference to FIG.

【0004】図4(a)において、1は焦電形赤外検出
素子、2は同じ赤外検出素子で赤外線が入射しないよう
設置され、ダミ−素子としての働きをする。3は導電路
付絶縁板で、両素子を図4(b)に示すような等価回路
になるよう結線する役目をはたしている。同図に示すよ
うに両素子の分極の向きは逆になっており、同一の圧電
雑音は消去されるようになっている。5は赤外検出素子
の出力信号7を時間順次で読み出すための半導体である
。このような構成により、圧電雑音は消去される。
In FIG. 4(a), 1 is a pyroelectric infrared detection element, and 2 is the same infrared detection element, which is installed so that infrared rays do not enter, and functions as a dummy element. Reference numeral 3 denotes an insulating plate with a conductive path, which serves to connect both elements to form an equivalent circuit as shown in FIG. 4(b). As shown in the figure, the polarization directions of both elements are reversed, so that the same piezoelectric noise is eliminated. 5 is a semiconductor for reading out the output signal 7 of the infrared detection element in time sequence. With such a configuration, piezoelectric noise is eliminated.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記の構
成では、容量性の素子が直列で結線されているので、素
子の合成電気容量は半分になる。2次元アレイセンサで
は素子1個々々の面積が小さいため素子容量が小さく、
浮遊電気容量と同程度になるため、信号読み出し効率の
低減を招いている。従って電気容量の低下はセンサの性
能低下に直接つながるという問題がある。
However, in the above configuration, since the capacitive elements are connected in series, the combined capacitance of the elements is halved. In a two-dimensional array sensor, the area of each element 1 is small, so the element capacitance is small.
Since the capacitance is about the same as the stray capacitance, signal readout efficiency is reduced. Therefore, there is a problem in that a decrease in capacitance directly leads to a decrease in sensor performance.

【0006】本発明は、上記従来技術の課題を解決する
もので、圧電雑音の低い高感度の焦電形2次元アレイ赤
外センサを提供することを目的とする。
The present invention solves the problems of the prior art described above, and aims to provide a highly sensitive pyroelectric two-dimensional array infrared sensor with low piezoelectric noise.

【0007】[0007]

【課題を解決するための手段】この目的を達成するため
に本発明は、2次元アレイ焦電形赤外検出素子と同ダミ
−素子それぞれに信号読みだし用半導体を組合せ、両者
を同一のクロックで駆動し、その出力信号をバッファア
ンプで増幅してから差動アンプで両者の差信号を取り出
すような構成としている。
[Means for Solving the Problems] In order to achieve this object, the present invention combines a two-dimensional array pyroelectric infrared detection element and a dummy element with a signal readout semiconductor, and clocks both of them using the same clock. The configuration is such that the output signal is amplified by a buffer amplifier, and then the difference signal between the two is extracted by a differential amplifier.

【0008】[0008]

【作用】本発明は上記構成によって、容量性素子を直列
に結線することなく、一度バッファアンプを通して差動
アンプにより差信号を取り出す方式なので素子の電気容
量低減がなく信号読み出し効率の低減を抑え、しかも同
一クロックで信号を読み出すので、信号読み出し用半導
体を別々にしても同時に信号を読み出すことができ、圧
電雑音は同一信号になり、差を取り出すことによりそれ
を消去することができる。
[Operation] With the above configuration, the present invention is a method in which a difference signal is extracted by a differential amplifier through a buffer amplifier without connecting capacitive elements in series, so there is no reduction in the capacitance of the elements, and a reduction in signal readout efficiency is suppressed. Furthermore, since the signals are read out using the same clock, the signals can be read out at the same time even if the signal readout semiconductors are used separately, and piezoelectric noise becomes the same signal, which can be eliminated by extracting the difference.

【0009】[0009]

【実施例】(実施例1)以下、本発明の一実施例につい
て図面を参照しながら説明する。
[Embodiment] (Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は本発明の第1の実施例における焦電
形2次元アレイ赤外センサの断面図である。図1におい
て、11は2次元アレイ焦電形赤外検出部、12は同一
寸法、同一材質、同一特性のダミ−素子部である。各々
は、縦、横ともに0.1mm 2 ピッチ有効素子面寸
法は0.08mm2 で、厚さ10μmのチタン酸鉛セ
ラミクスで、その片面全面に図示していないニクロム共
通電極がシ−ト抵抗350 Ω/cm2 になるような
厚さで蒸着されている。反対側は0.1mm 2 ピッ
チで0.08mm2 のアルミニウム電極が厚さ1μm
で 128×128 個蒸着され、更にその上に金(A
u,Gold) 電極膜が蒸着されている。図1に示す
インジウムバンプ14が該分離電極に接続しかつ信号読
み出し用のCCDチップ15に接続して両者を電気的か
つ機械的に接続している。この接続は約 160℃の高
温下で、熱圧着法により行われる。
FIG. 1 is a sectional view of a pyroelectric two-dimensional array infrared sensor according to a first embodiment of the present invention. In FIG. 1, reference numeral 11 indicates a two-dimensional array pyroelectric infrared detection section, and reference numeral 12 indicates a dummy element section having the same dimensions, the same material, and the same characteristics. Each is made of lead titanate ceramic with a pitch of 0.1 mm2 in both length and width, effective element surface dimension of 0.08 mm2, and a thickness of 10 μm, and a nichrome common electrode (not shown) on one side of the ceramic has a sheet resistance of 350 Ω. /cm2. On the other side, aluminum electrodes of 0.08 mm2 with a pitch of 0.1 mm2 are 1 μm thick.
128 x 128 pieces were deposited, and gold (A
u, Gold) An electrode film is deposited. An indium bump 14 shown in FIG. 1 is connected to the separation electrode and to a CCD chip 15 for signal readout to electrically and mechanically connect the two. This connection is made by thermocompression bonding at a high temperature of approximately 160°C.

【0011】CCD15の信号読込電極は図示していな
いが、当然0.1 mm2 ピッチで 128×128
 個配列している。
Although the signal reading electrodes of the CCD 15 are not shown, they are of course 128×128 with a pitch of 0.1 mm2.
They are arranged in an array.

【0012】組立てられた2個のチップを図1に示すよ
うに基板13の両面にCCD15側を接着し、図示して
いないパッケ−ジに赤外検出部11だけが、入力信号で
ある赤外線を受光するように設置する。ふたつのCCD
15は同一のクロック信号16で駆動し、両出力17は
ふたつのバッファアンプ18で各々同一増幅度で増幅し
、その出力を差動アンプ19に入れ、両者の差信号を取
り出すようにする。
As shown in FIG. 1, the two assembled chips are glued with the CCD 15 sides on both sides of the substrate 13, and placed in a package (not shown) in which only the infrared detection section 11 receives infrared rays as an input signal. Install it so that it receives light. two CCDs
15 are driven by the same clock signal 16, both outputs 17 are amplified with the same amplification degree by two buffer amplifiers 18, and their outputs are input to a differential amplifier 19 to extract the difference signal between the two.

【0013】以上のように構成された焦電形2次元アレ
イ赤外センサについて、図2に示す等価回路を用いてそ
の動作を説明する。外部からの加振によりふたつの2次
元アレイ焦電形赤外検出部(2次元アレイ焦電素子)1
1に加わる振動は振動特性がほぼ等価の位置に設置され
ているのでほぼ同一である。そこで、圧電ノイズは、周
波数、振幅、位相全てがほぼ同じで、これを差動アンプ
19でそれらの差をとれば、入力信号である赤外線によ
る出力を除いて、振動雑音は消去される。しかも、ダミ
−素子12を直列に接続した場合と比較して信号読み出
し効率が高い。具体的に述べると、焦電素子11の電気
容量は1pFであるが、浮遊容量が 0.5pFなので
、読み出し効率は(数1)で算式でき、約66%である
The operation of the pyroelectric two-dimensional array infrared sensor constructed as described above will be explained using the equivalent circuit shown in FIG. Two two-dimensional array pyroelectric infrared detectors (two-dimensional array pyroelectric element) 1 are generated by external vibration.
The vibrations applied to the parts 1 and 1 are almost the same because they are installed at positions with almost equivalent vibration characteristics. Therefore, the piezoelectric noise has substantially the same frequency, amplitude, and phase, and if the difference is calculated by the differential amplifier 19, the vibration noise is eliminated except for the output due to infrared rays, which is the input signal. Furthermore, signal readout efficiency is higher than in the case where the dummy elements 12 are connected in series. Specifically, the capacitance of the pyroelectric element 11 is 1 pF, but since the stray capacitance is 0.5 pF, the readout efficiency can be calculated using equation (1) and is about 66%.

【0014】[0014]

【数1】[Math 1]

【0015】一方、ダミ−素子12を直接、直列に組合
せた場合は、焦電素子11の電気容量は0.5pF と
なり、読み出し効率は50%に低減する。しかも、ダミ
−素子12の圧電特性が異ると、圧電雑音の消去効果も
低減することになるが、本実施例の構成では、バッファ
アンプ18をふたつ用いているので、もし圧電特性の平
均値が異る場合は、各々のバッファアンプ18の増幅度
を加減することで、その差を抑えることができる。
On the other hand, when the dummy elements 12 are directly combined in series, the capacitance of the pyroelectric element 11 is 0.5 pF, and the readout efficiency is reduced to 50%. Furthermore, if the piezoelectric characteristics of the dummy elements 12 are different, the piezoelectric noise cancellation effect will be reduced; however, in the configuration of this embodiment, two buffer amplifiers 18 are used, so if the piezoelectric characteristics are different, If they differ, the difference can be suppressed by adjusting the amplification degree of each buffer amplifier 18.

【0016】以上のように本実施例によれば、特性の同
等なふたつの焦電形2次元アレイ赤外センサを同一の基
板に振動特性が同一の位置に設置し、一方のセンサすな
わち焦電形赤外検出部11のみに信号赤外線が入射する
ようにし、ふたつの半導体が同一のクロックで駆動され
、各々バッファアンプ18を通して両者の差信号を差動
アンプ19で取り出すことにより、読み出し効率の低減
を抑え、しかも圧電雑音を著しく低減した高感度の焦電
形2次元アレイ赤外センサを現実することができる。
As described above, according to this embodiment, two pyroelectric type two-dimensional array infrared sensors with the same characteristics are installed on the same substrate at a position with the same vibration characteristics, and one sensor, that is, the pyroelectric By making the signal infrared rays incident only on the infrared detector 11, driving the two semiconductors with the same clock, and extracting the difference signal between them with the differential amplifier 19 through the buffer amplifier 18, the readout efficiency is reduced. It is possible to realize a highly sensitive pyroelectric two-dimensional array infrared sensor that suppresses piezoelectric noise and significantly reduces piezoelectric noise.

【0017】(実施例2)以下、本発明の第2の実施例
について図面を参照しながら説明する。
(Embodiment 2) A second embodiment of the present invention will be described below with reference to the drawings.

【0018】図3は本発明の第2の実施例における焦電
形2次元アレイ赤外センサの断面図である。
FIG. 3 is a sectional view of a pyroelectric two-dimensional array infrared sensor according to a second embodiment of the present invention.

【0019】図3において、21は2次元アレイ焦電形
赤外検出部、22は同一寸法、同一材質、同一特性のダ
ミ−素子部で、以上は図1の構成と同様なものである。 図1の構成と異るのは、ふたつの2次元アレイ赤外セン
サを別々に基板に貼り付けるのではなく、CCD15の
面で両者を貼り合せ、一体にしてから、ダミ−素子22
面で基板23に貼り付けた点である。
In FIG. 3, 21 is a two-dimensional array pyroelectric infrared detection section, and 22 is a dummy element section having the same dimensions, the same material, and the same characteristics, which is the same as the structure shown in FIG. 1. The difference from the configuration in FIG. 1 is that instead of attaching the two two-dimensional array infrared sensors to the substrate separately, they are attached on the surface of the CCD 15 and integrated, and then the dummy element 22
This is the point where the surface is attached to the substrate 23.

【0020】上記のように構成された焦電形2次元アレ
イ赤外センサについて、以下その動作を説明する。まず
、外部からの加振による振動状況は厳密には、振動特性
上等価の位置に置かれていないので異ることになるが、
基板23の厚さが10mmであるのに対して、CCD1
5は0.3 mmであり、焦電素子21が0.01mm
の厚さで、インジウム接合部とともに後者は無視し得る
寸法になっている。そこで、前者の厚さのみを考えて、
10mm厚さの基板23の振動において、CCD15の
厚さの位置の差が、振動モ−ドとしてどのような差にな
って現れるかを考えればよい。振動は通常数Hzから2
kHz程度の範囲が対象となるので、基板上での音速を
8000m/sとすると、波長は(数2)で求められ、
最短で4mである。
The operation of the pyroelectric two-dimensional array infrared sensor constructed as described above will be explained below. First of all, strictly speaking, the vibration conditions due to external excitation are different because they are not placed at equivalent positions in terms of vibration characteristics.
While the thickness of the substrate 23 is 10 mm, the CCD 1
5 is 0.3 mm, and the pyroelectric element 21 is 0.01 mm.
, the latter together with the indium junction are of negligible size. Therefore, considering only the former thickness,
In the vibration of the substrate 23 having a thickness of 10 mm, it is only necessary to consider how the difference in the position of the thickness of the CCD 15 manifests as a difference in vibration mode. Vibration is usually from several Hz to 2
Since the target range is about kHz, if the speed of sound on the board is 8000 m/s, the wavelength can be found by (Equation 2),
The shortest length is 4m.

【0021】[0021]

【数2】[Math 2]

【0022】従って、波長4mで、位置が 0.3mm
の差の場合、位相のズレは、 0.025°程度で・ほ
とんど無視し得ることがわかる。以上のように、ふたつ
の2次元アレイ赤外センサを基板23の片側にまとめて
設置することにより、圧電雑音を低減でき、しかも基板
の反対側はセンサが設置されていないので、パッケ−ジ
基部に直接接着でき、丈夫で、組立の比較的容易な焦電
形2次元アレイ赤外センサが実現できる。
[0022] Therefore, at a wavelength of 4 m, the position is 0.3 mm.
It can be seen that in the case of a difference of , the phase shift is about 0.025° and can be almost ignored. As described above, piezoelectric noise can be reduced by installing the two two-dimensional array infrared sensors on one side of the board 23, and since no sensors are installed on the other side of the board, the package base It is possible to realize a pyroelectric two-dimensional array infrared sensor that can be directly adhered to, is durable, and relatively easy to assemble.

【0023】なお、第1の実施例において、ダミ−素子
の共通電極をニクロム蒸着膜としたが赤外線の吸収効率
を高くすることはかならずしも必要ないので、アルミニ
ウム蒸着膜としてもよい。また、第2の実施例ではダミ
−素子面は基板に接着しているので、アルミニウム蒸着
膜でもよいことは言うまでもない。
In the first embodiment, the common electrode of the dummy element is made of a nichrome vapor deposited film, but since it is not always necessary to increase the absorption efficiency of infrared rays, an aluminum vapor deposited film may be used. Further, in the second embodiment, since the dummy element surface is bonded to the substrate, it goes without saying that an aluminum vapor-deposited film may be used.

【0024】[0024]

【発明の効果】以上のように本発明は、焦電素子と信号
読み出し用半導体を組合せた2次元アレイ赤外センサを
2組用い、同一のクロックで駆動して、一方のみに入力
信号である赤外線を入射し、バッファアンプを介して差
信号をとることにより、圧電雑音を大幅に低減でき、信
号読み出し効率の低減を抑えた高感度の優れた焦電形2
次元アレイ赤外センサを実現できるものである。
[Effects of the Invention] As described above, the present invention uses two sets of two-dimensional array infrared sensors that are a combination of a pyroelectric element and a signal readout semiconductor, are driven by the same clock, and only one of them receives an input signal. By injecting infrared rays and obtaining a difference signal via a buffer amplifier, piezoelectric noise can be significantly reduced, and the highly sensitive pyroelectric type 2 suppresses reduction in signal readout efficiency.
A dimensional array infrared sensor can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の第1の実施例における焦電形2次元ア
レイ赤外センサの断面図
FIG. 1 is a cross-sectional view of a pyroelectric two-dimensional array infrared sensor in a first embodiment of the present invention.

【図2】同第1の実施例における焦電形2次元アレイ赤
外センサの等価回路図
[Fig. 2] Equivalent circuit diagram of the pyroelectric two-dimensional array infrared sensor in the first embodiment.

【図3】本発明の第2の実施例における焦電形2次元ア
レイ赤外センサの断面図
FIG. 3 is a cross-sectional view of a pyroelectric two-dimensional array infrared sensor according to a second embodiment of the present invention.

【図4】(a)従来の焦電形2次元アレイ赤外センサの
断面図(b)従来の焦電形2次元アレイ赤外センサの等
価回路図
[Figure 4] (a) Cross-sectional view of a conventional pyroelectric two-dimensional array infrared sensor (b) Equivalent circuit diagram of a conventional pyroelectric two-dimensional array infrared sensor

【符号の説明】[Explanation of symbols]

11  2次元アレイ焦電形赤外検出部12  2次元
アレイ焦電形ダミ−素子部13  基板 14  インジウムバンプ接合部 15  信号読み出し用2次元アレイ半導体(CCD)
16  クロック信号 17  出力信号端 18  バッファアンプ 19  差動アンプ
11 Two-dimensional array pyroelectric infrared detection section 12 Two-dimensional array pyroelectric dummy element section 13 Substrate 14 Indium bump junction section 15 Two-dimensional array semiconductor (CCD) for signal readout
16 Clock signal 17 Output signal end 18 Buffer amplifier 19 Differential amplifier

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  複数個の焦電形赤外検出素子を2次元
に配列した赤外検出部と、その赤外検出部の出力信号を
時間順次で読み出す半導体とでなる特性同一の第1、第
2の2次元アレイ赤外センサを有し、その2次元アレイ
赤外センサを同一の基板に振動特性が略同一になる位置
に設置し、前記第1の2次元アレイ赤外センサのみに信
号赤外線が入射するようにし、前記第1、第2の2次元
アレイ赤外センサを同一のクロックで駆動し、各々にバ
ッファアンプを付け、両出力を差動アンプに入力し、両
者の差を出力として得ることを特徴とする焦電形2次元
アレイ赤外センサ。
1. A first infrared detection section having the same characteristics, consisting of an infrared detection section in which a plurality of pyroelectric infrared detection elements are two-dimensionally arranged, and a semiconductor that reads out the output signals of the infrared detection section in time sequence. A second two-dimensional array infrared sensor is provided, the two-dimensional array infrared sensor is installed on the same substrate at a position where the vibration characteristics are approximately the same, and a signal is sent only to the first two-dimensional array infrared sensor. Infrared rays are made incident, the first and second two-dimensional array infrared sensors are driven by the same clock, each is provided with a buffer amplifier, both outputs are input to a differential amplifier, and the difference between the two is output. A pyroelectric two-dimensional array infrared sensor characterized in that it is obtained as follows.
【請求項2】  第1、第2の2次元アレイ赤外センサ
が基板の両側に面対称の位置に設置されている請求項1
記載の焦電形2次元アレイ赤外センサ。
Claim 2: Claim 1, wherein the first and second two-dimensional array infrared sensors are installed at symmetrical positions on both sides of the substrate.
The pyroelectric two-dimensional array infrared sensor described above.
【請求項3】  第1、第2の2次元アレイ赤外センサ
が面対称の位置関係で、CCD側で貼り合され、外側に
配置された焦電形2次元アレイ素子の一方の面が基板に
貼り付けられている請求項1記載の焦電形2次元アレイ
赤外センサ。
3. The first and second two-dimensional array infrared sensors are bonded together on the CCD side in a plane-symmetrical positional relationship, and one surface of the pyroelectric two-dimensional array element disposed on the outside is attached to the substrate. The pyroelectric two-dimensional array infrared sensor according to claim 1, which is attached to a pyroelectric two-dimensional array infrared sensor.
JP3131379A 1991-06-03 1991-06-03 Pyroelectric two-dimensional array infrared sensor Pending JPH04355331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3131379A JPH04355331A (en) 1991-06-03 1991-06-03 Pyroelectric two-dimensional array infrared sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3131379A JPH04355331A (en) 1991-06-03 1991-06-03 Pyroelectric two-dimensional array infrared sensor

Publications (1)

Publication Number Publication Date
JPH04355331A true JPH04355331A (en) 1992-12-09

Family

ID=15056574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3131379A Pending JPH04355331A (en) 1991-06-03 1991-06-03 Pyroelectric two-dimensional array infrared sensor

Country Status (1)

Country Link
JP (1) JPH04355331A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262418B1 (en) * 1997-10-24 2001-07-17 Matsushita Electric Industrial Co., Ltd. Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
WO2019229353A1 (en) 2018-05-30 2019-12-05 Commissariat à l'énergie atomique et aux énergies alternatives Sensitive pixel based detection system comprising a thermal detector and a compensation device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262418B1 (en) * 1997-10-24 2001-07-17 Matsushita Electric Industrial Co., Ltd. Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
WO2019229353A1 (en) 2018-05-30 2019-12-05 Commissariat à l'énergie atomique et aux énergies alternatives Sensitive pixel based detection system comprising a thermal detector and a compensation device
FR3081989A1 (en) * 2018-05-30 2019-12-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives SENSITIVE PIXEL DETECTION SYSTEM COMPRISING A THERMAL DETECTOR AND A COMPENSATION DEVICE
US11815400B2 (en) 2018-05-30 2023-11-14 Commissariat à l'énergie atomique et aux énergies alternatives Sensitive pixel based detection system comprising a thermal detector and a compensation device

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