JPH04367827A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH04367827A
JPH04367827A JP3144514A JP14451491A JPH04367827A JP H04367827 A JPH04367827 A JP H04367827A JP 3144514 A JP3144514 A JP 3144514A JP 14451491 A JP14451491 A JP 14451491A JP H04367827 A JPH04367827 A JP H04367827A
Authority
JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
resistance element
nonlinear resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3144514A
Other languages
Japanese (ja)
Inventor
Shinichi Kamagami
信一 鎌上
Hirotsugu Abe
安倍 裕嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP3144514A priority Critical patent/JPH04367827A/en
Publication of JPH04367827A publication Critical patent/JPH04367827A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To eliminate difficulty in handling during production and to provide a liq. crystal display device having high display grade and high yield. CONSTITUTION:This liq. crystal display device has display image elements with an incorporated nonlinear resistance element 27 having a three-layered structure consisting of a metal layer 22, an insulator layer 23 and a metal layer 26. The shape of the nonlinear resistance element 27 seen from a normal direction of the insulator layer 23 is nearly circular.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は液晶表示装置に係り、
特に非線形抵抗素子からなるスイッチング素子を各画素
に組み込んだ液晶表示装置に関する。
[Industrial Application Field] This invention relates to a liquid crystal display device.
In particular, the present invention relates to a liquid crystal display device in which each pixel incorporates a switching element made of a nonlinear resistance element.

【0002】0002

【従来の技術】近年、液晶表示装置は、時計,電卓,計
測機器等の比較的簡単なものから、パ−ソナル・コンピ
ュ−タ,ワ−ド・プロセッサ,更にOA用の端末機器,
TV画像表示等の大容量情報表示用として使用されてき
ている。
[Prior Art] In recent years, liquid crystal display devices have been widely used in devices ranging from relatively simple devices such as watches, calculators, and measuring instruments to personal computers, word processors, and even terminal equipment for office automation.
It has been used for displaying large amounts of information such as TV image display.

【0003】この種の大容量の液晶表示装置においては
、従来、マトリクス表示のマルチプレックス駆動方式が
一般に採用されている。ところが、この方式は液晶自身
の本質的な特性により、表示部分(オン画素)と非表示
部分(オフ画素)のコントラスト比の点では、200本
程度の走査線を有する場合でも不十分であり、更に走査
線が500本以上程度の大規模なマトリクス駆動を行な
う場合には、コントラストの劣化が致命的であった。
[0003] In this type of large-capacity liquid crystal display device, a multiplex drive system for matrix display has generally been adopted. However, due to the essential characteristics of the liquid crystal itself, this method is insufficient in terms of contrast ratio between the display area (on pixels) and the non-display area (off pixels) even when it has about 200 scanning lines. Furthermore, when performing large-scale matrix driving with approximately 500 or more scanning lines, deterioration of contrast is fatal.

【0004】この液晶表示装置の持つ欠点を解決するた
めの開発が、各所で盛んに行なわれている。その1つの
方向としては、個々の画素を直接スイッチ駆動するもの
があり、スイッチング素子に薄膜トランジスタや非線形
抵抗素子を用いている。このうち非線形抵抗素子は、薄
膜トランジスタに比べて基本的に2端子であるために構
造が簡単であり、製造が容易である。このため、製造歩
留まりの向上が期待出来、コスト低下の利点がある。
[0004] Developments to solve the drawbacks of this liquid crystal display device are actively being carried out in various places. One approach is to directly drive each pixel with a switch, using thin film transistors or nonlinear resistance elements as switching elements. Among these, the nonlinear resistance element basically has two terminals, so it has a simpler structure and is easier to manufacture than a thin film transistor. Therefore, an improvement in manufacturing yield can be expected and there is an advantage in cost reduction.

【0005】このような非線形抵抗素子は、薄膜トラン
ジスタと同様の材料を用いて接合形成したダイオ−ドの
型、酸化亜鉛を用いたバリスタの型、電極間に絶縁物を
挾んだ金属層−絶縁体層−金属層(MIM)の型、更に
は金属電極間に半導電性の層を用いた型等が開発されて
いる。このうちMIM型は、構造が最も簡単なものの1
つで、現在、既に実用化されている。
[0005] Such nonlinear resistance elements include a diode type in which a junction is formed using the same material as a thin film transistor, a varistor type in which zinc oxide is used, and a metal layer-insulating type in which an insulator is sandwiched between electrodes. A body layer-metal layer (MIM) type and a type using a semiconductive layer between metal electrodes have been developed. Among these, the MIM type has one of the simplest structures.
It is already in practical use.

【0006】さて、従来のMIM型の非線形抵抗素子を
用いた液晶表示装置について製造工程に従って説明する
。図7は液晶表示装置を示す断面図であり、図8は従来
のMIM型の非線形抵抗素子を有するアレイ基板の1画
素部分を示す平面図である。先ず、ガラス基板1上にT
a(タンタル)膜2をスパッタリング法や真空蒸着法等
の薄膜形成法により形成し、写真腐食法により所望のパ
タ−ンにする。これにより、配線と非線形抵抗素子の一
方の電極とが形成される。次に、Ta膜2をクエン酸水
溶液等の液中で陽極酸化法により化成し、酸化膜3を形
成する。
Now, a liquid crystal display device using a conventional MIM type nonlinear resistance element will be explained according to the manufacturing process. FIG. 7 is a cross-sectional view showing a liquid crystal display device, and FIG. 8 is a plan view showing one pixel portion of an array substrate having a conventional MIM type nonlinear resistance element. First, T is placed on the glass substrate 1.
A (tantalum) film 2 is formed by a thin film forming method such as a sputtering method or a vacuum evaporation method, and is formed into a desired pattern by a photoetching method. As a result, the wiring and one electrode of the nonlinear resistance element are formed. Next, the Ta film 2 is chemically converted by anodic oxidation in a liquid such as a citric acid aqueous solution to form an oxide film 3.

【0007】次に、Cr(クロム)膜4を形成し、写真
腐食法によりパタ−ニングを行ない、非線形抵抗素子の
他方の電極とすることでMIM型の非線形抵抗素子が完
成する。更にこの後、画像表示用の透明電極5を形成す
ればよい。こうした基本的な製造技術は、特開昭55−
161273号公報に開示され、その改良技術が特開昭
58−178320号公報等に示されている。
Next, a Cr (chromium) film 4 is formed and patterned by photoetching to form the other electrode of the nonlinear resistance element, thereby completing the MIM type nonlinear resistance element. Furthermore, after this, a transparent electrode 5 for image display may be formed. These basic manufacturing techniques are
It is disclosed in Japanese Patent Application Laid-open No. 161273, and its improved technology is shown in Japanese Patent Application Laid-Open No. 178320/1983.

【0008】一方別に、例えばガラスからなる基板6上
に、例えばITOからなるストライプ状の対向電極7を
形成することにより、対向基板8を得る。そして、対向
基板8とマトリクスアレイ基板9のそれぞれにポリミイ
ド樹脂を塗布し、ラビング処理(布で擦る)を施して液
晶の配向層10、11を形成する。しかる後、両基板8
、9を5〜20μmの間隔を保って保持させ、この間隙
に液晶12を注入する。ここで、接続された非線形抵抗
素子13と透明電極5、対向電極7および液晶12の組
合わせにより1つの画素が構成されている。
Separately, a counter substrate 8 is obtained by forming a striped counter electrode 7 made of, for example, ITO on a substrate 6 made of, for example, glass. Then, a polymide resin is applied to each of the counter substrate 8 and the matrix array substrate 9, and a rubbing process (rubbing with a cloth) is performed to form liquid crystal alignment layers 10 and 11. After that, both boards 8
, 9 are maintained at a gap of 5 to 20 μm, and liquid crystal 12 is injected into this gap. Here, one pixel is constituted by a combination of the connected nonlinear resistance element 13, transparent electrode 5, counter electrode 7, and liquid crystal 12.

【0009】[0009]

【発明が解決しようとする課題】上記のような従来の液
晶表示装置では、配向層11を形成する際のラビング処
理に伴なって発生する静電気により非線形抵抗素子13
が絶縁破壊されてしまい、表示に点欠陥として現れ、表
示品位を著しく損なうという問題があった。又、静電気
により容易に破壊されることは、製造工程中の取扱いを
難しくし、歩留まりの低下につながっていた。この発明
は、上記事情に鑑みなされたもので、高表示品位にして
且つ高歩留まりの液晶表示装置を提供することを目的と
する。
[Problems to be Solved by the Invention] In the conventional liquid crystal display device as described above, the nonlinear resistance element 13 is damaged due to static electricity generated during the rubbing process when forming the alignment layer 11.
There was a problem in that dielectric breakdown occurred, which appeared as point defects on the display, significantly impairing the display quality. In addition, the fact that it is easily destroyed by static electricity makes it difficult to handle during the manufacturing process, leading to a decrease in yield. The present invention was made in view of the above circumstances, and an object of the present invention is to provide a liquid crystal display device with high display quality and high yield.

【0010】0010

【課題を解決するための手段】この発明は、金属層−絶
縁体層−金属層の3層構造をなす非線形抵抗素子が組み
込まれた表示画素を有する液晶表示装置において、上記
非線形抵抗素子は上記絶縁体層の法線方向から見た形状
が略円形である液晶表示装置である。
[Means for Solving the Problems] The present invention provides a liquid crystal display device having a display pixel incorporating a nonlinear resistance element having a three-layer structure of metal layer-insulator layer-metal layer, wherein the nonlinear resistance element is The liquid crystal display device has a substantially circular shape when viewed from the normal direction of the insulating layer.

【0011】[0011]

【作用】従来、問題となっている非線形抵抗素子13の
絶縁破壊は、一方の電極を除去した後、硫酸銅水溶液中
で電気メッキを施すことにより、絶縁破壊発生部を調べ
ることが出来る。この方法によれば、絶縁破壊発生部は
、2つの電極が交差した構成の非線形抵抗素子の端部に
集中していることが判った。特に、非線形抵抗素子を絶
縁体層の法線方向から見て角を形成している所(四角の
角)に多く見られた。これは、上記の角部分にかかる電
界が他の部分に比べて大きくなるためと考えられる。
[Operation] The dielectric breakdown of the nonlinear resistance element 13, which has been a problem in the past, can be investigated by removing one electrode and then electroplating in a copper sulfate aqueous solution. According to this method, it was found that the dielectric breakdown occurred concentrated at the end of the nonlinear resistance element in which two electrodes crossed. In particular, they were often found in corners where the nonlinear resistance element was viewed from the normal direction of the insulator layer (square corners). This is thought to be because the electric field applied to the corner portions is larger than the other portions.

【0012】そこで、この発明の液晶表示装置によれば
、非線形抵抗素子の形状が絶縁体層の法線方向から見た
形状が略円形になっているので、絶縁体層の一部に集中
して電界が印加されることがない。従って、ラビング処
理時の静電気による非線形抵抗素子の絶縁破壊、又、静
電気により容易に破壊されることによる製造工程中の取
扱い難さ、および歩留まりの低下という問題点は解決さ
れる。その結果、高表示品位にして且つ高歩留まりの液
晶表示装置が得られる。
Therefore, according to the liquid crystal display device of the present invention, since the shape of the nonlinear resistance element is approximately circular when viewed from the normal direction of the insulator layer, the nonlinear resistance element is concentrated in a part of the insulator layer. No electric field is applied. Therefore, the problems of dielectric breakdown of the nonlinear resistance element due to static electricity during the rubbing process, as well as difficulty in handling during the manufacturing process and reduction in yield due to easy breakdown due to static electricity, are solved. As a result, a liquid crystal display device with high display quality and high yield can be obtained.

【0013】[0013]

【実施例】以下、図面を参照して、この発明の一実施例
を詳細に説明する。図1〜図5は、この発明の液晶表示
装置におけるマトリクスアレイ基板の製造工程を示した
もので、この製造工程に従って述べることにする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. 1 to 5 show the manufacturing process of a matrix array substrate in a liquid crystal display device of the present invention, and the following will be described in accordance with this manufacturing process.

【0014】先ず、図1に示すように、例えば硼硅酸ガ
ラスからなる基板21上にTa膜をスパッタリング法に
より0.30μmの厚さに形成した後、CF4 とO2
 の混合ガスを用いてドライエッチングを行ないパタ−
ニングし下部金属層22とする。次に、図2に示すよう
に、上記の基板21を0.01重量%クエン酸水溶液中
で陽極酸化し、0.06μmの陽極酸化膜を下部金属層
22の表面に形成することにより、非線形抵抗素子の絶
縁体層23を得る。
First, as shown in FIG. 1, a Ta film is formed to a thickness of 0.30 μm by sputtering on a substrate 21 made of, for example, borosilicate glass, and then CF4 and O2
Dry etching is performed using a mixed gas of
The lower metal layer 22 is formed by coating the lower metal layer 22. Next, as shown in FIG. 2, the above-mentioned substrate 21 is anodized in a 0.01% by weight citric acid aqueous solution to form a 0.06 μm anodic oxide film on the surface of the lower metal layer 22. An insulator layer 23 of a resistance element is obtained.

【0015】次に、図3に示すように、膜厚0.20μ
mのSiNx24をCVD (Chemical Va
por Deposition)により基板21全面に
形成した後、直径5μmの円形コンタクトホ−ル25を
形成する。この時のドライエッチングは、絶縁体層23
との選択比を大きくするために、CF4 とO2 との
混合ガス比を調整し、絶縁体層23を極力エッチングし
ないように行なう。
Next, as shown in FIG. 3, the film thickness is 0.20μ.
CVD (Chemical Va.
After forming the contact hole 25 on the entire surface of the substrate 21 by por deposition, a circular contact hole 25 with a diameter of 5 μm is formed. In this dry etching, the insulator layer 23
In order to increase the selection ratio between CF4 and O2, the mixed gas ratio of CF4 and O2 is adjusted to avoid etching the insulator layer 23 as much as possible.

【0016】次に、図4に示すように、Ti膜を基板2
1上に0.20μmの厚さに形成した後、パタ−ニング
して上部金属層26とする。この場合、Ti膜のエッチ
ングは、過酸化水素水2000mlとアンモニア水50
0mlとエチレンジアミン四酢酸(EDTA)60gと
水2200mlとから混合調整されたエッチング液によ
り行なう。上記の下部金属層22−絶縁体層23−上部
金属層26により、非線形抵抗素子27が形成されてい
る。
Next, as shown in FIG. 4, a Ti film is placed on the substrate 2.
1 to a thickness of 0.20 μm and patterned to form the upper metal layer 26. In this case, the Ti film was etched using 2000 ml of hydrogen peroxide and 50 ml of ammonia water.
The etching solution is prepared by mixing 0 ml of ethylenediaminetetraacetic acid (EDTA), 60 g of ethylenediaminetetraacetic acid (EDTA), and 2200 ml of water. A nonlinear resistance element 27 is formed by the lower metal layer 22, insulator layer 23, and upper metal layer 26 described above.

【0017】次に、図5に示すように、例えばITOか
らなる透明導電膜を0.15μmの膜厚でスパッタリン
グ法により形成した後、上部金属層26と電気的に接続
されるようにパタ−ニングし、画素電極28とする。こ
のパタ−ニングは、塩酸1000mlと水1000ml
との割合の混合液にて行なった。こうして、マトリクス
アレイ基板29が完成するが、この図5の平面図が図6
である。
Next, as shown in FIG. 5, a transparent conductive film made of, for example, ITO is formed to a thickness of 0.15 μm by sputtering, and then patterned so as to be electrically connected to the upper metal layer 26. to form the pixel electrode 28. This patterning was done using 1000ml of hydrochloric acid and 1000ml of water.
The test was carried out using a mixed solution in the proportion of In this way, the matrix array substrate 29 is completed, and the plan view of this FIG. 5 is shown in FIG.
It is.

【0018】次に、従来と同様に、マトリクスアレイ基
板29と図7に示す対向基板8の両基板上にポリミイド
樹脂を塗布し、ラビング処理を施して液晶の配向層11
、10を形成する。しかる後、両基板29、8を5μm
の間隔を保って保持させ、この間隙に液晶10を注入す
る。更に、駆動回路を付与して液晶表示装置とする。 以上のようにして製造された液晶表示装置を駆動し、表
示を観察したところ、点欠陥、むらなどの表示欠陥は見
られず、高品位の表示であった。
Next, as in the prior art, polyimide resin is coated on both the matrix array substrate 29 and the counter substrate 8 shown in FIG.
, 10 are formed. After that, both substrates 29 and 8 are coated with a thickness of 5 μm.
The liquid crystal 10 is injected into this gap. Furthermore, a driving circuit is added to form a liquid crystal display device. When the liquid crystal display device manufactured as described above was driven and the display was observed, no display defects such as point defects or unevenness were observed, and the display was of high quality.

【0019】一方、上記実施例においてコンタクトホ−
ル25の形状を絶縁体層23の法線方向から見て四角形
にし、他は全て上記実施例と同じにした液晶表示装置を
作成した。しかしこの場合は、上記実施例と同様に駆動
して表示を観察したところ、画面中央および周辺に約9
0個の点欠陥が見られた。
On the other hand, in the above embodiment, the contact hole
A liquid crystal display device was fabricated in which the shape of the loop 25 was square when viewed from the normal direction of the insulating layer 23, and all other aspects were the same as in the above embodiment. However, in this case, when driving and observing the display in the same manner as in the above embodiment, it was found that approximately 9
0 point defects were observed.

【0020】尚、図1〜図5の製造工程の順序を変更し
ても良い。即ち、下部金属層22をパタ−ニングした後
、続けて絶縁体層23およびコンタクトホ−ル25を形
成し、しかる後に下部金属層22の陽極酸化を行なって
も良い。上記実施例と同じ構造の非線形抵抗素子を、形
成することが出来るからである。
Note that the order of the manufacturing steps shown in FIGS. 1 to 5 may be changed. That is, after patterning the lower metal layer 22, the insulator layer 23 and the contact hole 25 may be successively formed, and then the lower metal layer 22 may be anodized. This is because a nonlinear resistance element having the same structure as in the above embodiment can be formed.

【0021】[0021]

【発明の効果】この発明によれば、非線形抵抗素子の形
状が絶縁体層の法線方向から見た形状が略円形になって
いるので、絶縁体層の一部に集中して電界が印加される
ことがない。従って、ラビング処理時の静電気による非
線形抵抗素子の絶縁破壊、又、静電気により容易に破壊
されることによる製造工程中の取扱い難さ、および歩留
まりの低下という問題点は解決される。その結果、高表
示品位にして且つ高歩留まりの液晶表示装置が得られる
[Effects of the Invention] According to the present invention, since the shape of the nonlinear resistance element is approximately circular when viewed from the normal direction of the insulating layer, the electric field is concentrated on a part of the insulating layer. never be done. Therefore, the problems of dielectric breakdown of the nonlinear resistance element due to static electricity during the rubbing process, as well as difficulty in handling during the manufacturing process and reduction in yield due to easy breakdown due to static electricity, are solved. As a result, a liquid crystal display device with high display quality and high yield can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】この発明の一実施例に係る液晶表示装置におけ
るマトリクスアレイ基板の画素部分を製造工程的に示す
斜視図。
FIG. 1 is a perspective view showing a manufacturing process of a pixel portion of a matrix array substrate in a liquid crystal display device according to an embodiment of the present invention.

【図2】同じく斜視図。FIG. 2 is a perspective view as well.

【図3】同じく斜視図。FIG. 3 is a perspective view as well.

【図4】同じく斜視図。FIG. 4 is a perspective view as well.

【図5】同じく斜視図。FIG. 5 is a perspective view as well.

【図6】同じく図5に対応する平面図。FIG. 6 is a plan view corresponding to FIG. 5;

【図7】従来の液晶表示装置を示す断面図。FIG. 7 is a cross-sectional view showing a conventional liquid crystal display device.

【図8】従来の液晶表示装置におけるマトリクスアレイ
基板の1画素部分を示す平面図。
FIG. 8 is a plan view showing one pixel portion of a matrix array substrate in a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

21…基板、22…下部金属層、23…絶縁体層、25
…コンタクトホ−ル、26…上部金属層、27…非線形
抵抗素子、28…画素電極。
21... Substrate, 22... Lower metal layer, 23... Insulator layer, 25
...Contact hole, 26... Upper metal layer, 27... Nonlinear resistance element, 28... Pixel electrode.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  金属層−絶縁体層−金属層の3層構造
をなす非線形抵抗素子が組み込まれた表示画素を有する
液晶表示装置において、上記非線形抵抗素子は上記絶縁
体層の法線方向から見た形状が略円形であることを特徴
とする液晶表示装置。
1. In a liquid crystal display device having a display pixel incorporating a nonlinear resistance element having a three-layer structure of a metal layer, an insulator layer, and a metal layer, the nonlinear resistance element is arranged in a direction normal to the insulator layer. A liquid crystal display device characterized by having a substantially circular shape when viewed.
JP3144514A 1991-06-17 1991-06-17 Liquid crystal display device Pending JPH04367827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3144514A JPH04367827A (en) 1991-06-17 1991-06-17 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3144514A JPH04367827A (en) 1991-06-17 1991-06-17 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH04367827A true JPH04367827A (en) 1992-12-21

Family

ID=15364123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3144514A Pending JPH04367827A (en) 1991-06-17 1991-06-17 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH04367827A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909264A (en) * 1996-03-21 1999-06-01 Sharp Kabushiki Kaisha LCD device having a switching element with reduced size and capacitance and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909264A (en) * 1996-03-21 1999-06-01 Sharp Kabushiki Kaisha LCD device having a switching element with reduced size and capacitance and method for fabricating the same

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