JPH0439219B2 - - Google Patents
Info
- Publication number
- JPH0439219B2 JPH0439219B2 JP6654086A JP6654086A JPH0439219B2 JP H0439219 B2 JPH0439219 B2 JP H0439219B2 JP 6654086 A JP6654086 A JP 6654086A JP 6654086 A JP6654086 A JP 6654086A JP H0439219 B2 JPH0439219 B2 JP H0439219B2
- Authority
- JP
- Japan
- Prior art keywords
- tcnq
- film
- complex
- tcnq complex
- anode foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011888 foil Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 5
- 238000004804 winding Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011244 liquid electrolyte Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YRCGJMGFKUITOD-UHFFFAOYSA-N CC1=CC=[N+](C=C1)[N+]1=CC=C(C=C1)C Chemical compound CC1=CC=[N+](C=C1)[N+]1=CC=C(C=C1)C YRCGJMGFKUITOD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Organic Insulating Materials (AREA)
Description
[発明の技術分野]
本発明は有機半導体を電解質としてなる電解コ
ンデンサの製造方法に関する。
[発明の時術的背景とその問題点]
一般にアルミニウムまたはタンタルなどの弁作
用金属の酸化物を誘電体とする電解コンデンサ
は、例えばアルミニウム箔からなる一対の陽陰極
箔に同じくアルミニウムからなる一対の引出端子
を接続し、前記一対の陽陰極箔相互間にスペーサ
を介在させ巻回し、しかるのち駆動用電解質とし
て有機または無機の液体電解質を含浸しケースに
収納し、該ケース開口部を封口体にて密封してな
るものである。しかしながら、前記液体電解質は
低温で比抵抗が増大しやすく低温特性が極度に悪
化し、低温度範囲で使用するには信頼性に欠ける
問題を有することから、近年電解質形成時の酸化
皮膜劣化度合が小さく、かつすぐれた温度特性や
高周波特性を与える電荷移動錯体型有機半導体を
固定電解質とする電解コンデンサが種々い提案さ
れている。
しかして前記有機半導体は電子供与体として含
窒素ポリマー例えばポリビニルピリジン、授受体
としてTCNQよりなるTCNQ錯体が実用上多く
用いられている。
従来、電極箔表面へのこれらTCNQ錯体層の
形成としては該TCNQ錯体を適切な有機溶媒に
溶解して塗布乾燥したり、またはTCNQ錯体を
一旦熱溶融したTCNQ錯体の熱溶融槽へ浸漬し
たり、あるいはTCNQ錯体を真空蒸着したりす
る手段がとられている。しかしながら、上記のよ
うなTCNQ差体層の形成技術にはつぎのような
問題を有している。すなわち有機溶媒溶液法の場
合有機溶媒に対するTCNQ錯対の溶解度が小
さいため十分な膜厚形成ができない。TCNQ
錯体は有機溶媒により分解しやすくい安定した導
電性が得られない。乾燥後TCNQ錯体は針状
に再結晶し電極箔に密着しない。また熱溶融法の
場合は溶融状態ての化学安定性が極めて悪く短時
間に導電性が減少し、加えてTCNQ錯体は熱分
解形が多く溶融前に分解しやすく特性が極めて不
安定になる結果となつていた。さらに、蒸着法の
場合は平滑電極箔または蒸発源に対抗した面以外
へのTCNQ錯体膜形は不可能であり、大容量化、
低損失(tanδ)化が困難であつた。
[発明の目的]
本発明は上記の点に鑑みてなされたもので、電
極箔とTCNQ錯体との接触効率を改善し、長時
間諸特性の安定化がはかれ、しかも小形化に貢献
できる電解コンデンサの製造方法を提供すること
を目的とするものである。
[発明の概要]
本発明の電解コンデンサの製造方法は、表面に
誘電体酸化皮膜を形成した帯状弁作用金属からな
る陽極箔の幅方向一端部両面を余白部とし、該余
白部を除く表面にTCNQ錯体を蒸着しTCNQ錯
体膜を形成し、該TCNQ錯体膜面上に陰極膜を
形成し帯状複層体を形成した後、該帯状複層体を
長さ方向に巻回して得たコンデンサ素子を高周波
誘導加熱し、前記TCNQ錯体膜を溶融して前記
陽極箔の細孔部および前記陰極膜に含浸・密着
し、しかるのち前記コンデンサ素子両端面に電極
引出部を形成することを特徴とするものである。
[発明の実施例]
以下本発明の一実施例につき説明する。すなわ
ち第1図に示すように表面に陽極酸化処理により
誘電体酸化皮膜1を形成した帯状アルミニウムか
らなる陽極箔2の幅方向一端部両面を余白部3と
し、該余白部3を除く前記陽極箔2表面に
TCNQ錯体を真空蒸着しTCNQ錯体膜4を形成
し、該TCNQ錯体膜4の前記余白部3に位置す
る端面を除いた面上に例えば銀たは銅粉末を銅電
媒体とする導電ペーストを塗布−乾燥するか、銀
または銅などの金属を真空蒸着し陰極膜5を形成
し帯状複層体6を得る。しかして、該帯状複層体
6を長さ方向に巻回し得たコンデンサ素子7を第
2図に示すよう加熱コイル8の中央部に挿入し、
前記加熱コイル8に22OKHzの高周波電流を流し
前記コンデンサ素子7を構成する陽極箔2に誘導
された電流発熱で前記TCNQ錯体膜4を急速か
つ短時間溶融して前記陽極箔2のエツチング細孔
部および陰極膜5に侵入させ冷却固化し、つぎに
第3図に示すように前記コンデンサ素子7両端面
に銀または銅ペーストを塗布一乾燥するが、亜
鉛,アルミニウムまたはハンダなどの金属をメタ
リコンし電極引出部9を形成し、該電極引出部9
に引出端子10を取着し、しかるのち外装(図示
せず)を施してなるものである。
以上のように構成してなる電解コンデンサの製
造方法によればTCNQ錯体を単に蒸着する従来
の方法に比べ、高周波誘導加熱によつてTCNQ
錯体膜4溶融されるため陽極箔2の粗面化面の細
孔内部および陰極膜5内部までTCNQ錯体が侵
入し、この部分にはTCNQ錯体膜4が密着され
大容量,低tanδ,長寿命化が可能となる。
またTCNQ錯体膜4の溶融が高周波誘導加熱
による短時間加熱であり、従来技術のTCNQ錯
体の熱溶融浸漬法のような長時間の加熱が不要で
あるためTCNQ錯体の熱分解が極めて少なく特
性のバラツキが小さく、さらにTCNQ錯体が溶
液塗布法に比べ、再結晶がなく陽極箔2および陰
極膜5への密着性がよく特性の向上・安定化上極
めて有効である。
つぎに、本発明の実施例と従来の参考例との比
較の一例について述べる。
実施例 A
高純度アルミニウム(純度99.99%)箔の表面
を電解エツチングにより粗面化した後、陽極酸化
処理により誘電体酸化皮膜を形成した帯状陽極箔
表面に2,2′−ビピリジニウム(TCNQ)2錯体
を真空蒸着し5μm厚のTCNQ錯体膜を形成しつ
ぎに該TCNQ錯体膜上にAgを真空蒸着し厚さ
10μmの陰極膜を形成して得た第1図に示すよう
な構成からなる帯状複層体を巻回して得たコンデ
ンサ素子を第2図に示すような手段にて5秒間高
周波誘導加熱処理し、しかるのち該コンデンサ素
子の両端面にAgペーストを塗布一乾燥し電極引
出部を形成し、該電極引出部に引出端子を溶着
し、外装構造としてエポキシ樹脂を被覆してなる
定格25WV 1μFの電解コンデンサ。
参考例 B
上記実施例Aと同一構成で形成したコンデンサ
素子に高周波誘導加熱処理を施すことなく両端面
にAgペーストを塗布−乾燥し電極引出部を形成
し、引出端子および外装構造を上記実施例と同一
構成とした定格25WV 1μFの電解コンデンサ。
参考例 C
上記実施例Aと同一構成で準備した陽極箔と純
度99%のアルミニウム箔表面を粗面化した陰極箔
をガラスクロスを介して巻回し形成したコンデン
サ素子をあらかじめ加熱溶融した2,2′−ビピ
リジニウム(TCNQ)2錯体液に浸漬−含浸し、
その後引上げて冷却し金属ケース外装とした定格
525WV 1μFの電解コンデンサ。
しかして、上記本発明に係る実施例Aと従来の
参考例B,Cの高温(105℃)負荷寿命に対する
tanδ特性、漏れ電流特性および溶積比較を調べた
結果第4図,第5図および表に示すようになつ
た。
[Technical Field of the Invention] The present invention relates to a method for manufacturing an electrolytic capacitor using an organic semiconductor as an electrolyte. [Temporary background of the invention and its problems] Generally, an electrolytic capacitor whose dielectric is an oxide of a valve metal such as aluminum or tantalum has a pair of anode and cathode foils made of aluminum foil and a pair of anode foils also made of aluminum. The lead terminals are connected, and the pair of anode and cathode foils are wound with a spacer interposed between them, and then impregnated with an organic or inorganic liquid electrolyte as a driving electrolyte and housed in a case, and the opening of the case is sealed with a sealing body. It is sealed and sealed. However, the liquid electrolyte tends to increase its specific resistance at low temperatures, resulting in extremely poor low-temperature characteristics and lacks reliability when used in a low temperature range. Various electrolytic capacitors have been proposed in which a fixed electrolyte is a charge transfer complex type organic semiconductor that is small and provides excellent temperature characteristics and high frequency characteristics. As the organic semiconductor, a TCNQ complex consisting of a nitrogen-containing polymer such as polyvinylpyridine as an electron donor and TCNQ as an acceptor is often used in practice. Conventionally, the TCNQ complex layer was formed on the surface of the electrode foil by dissolving the TCNQ complex in an appropriate organic solvent and coating and drying it, or by immersing the TCNQ complex in a thermal melting tank in which the TCNQ complex was once thermally melted. Alternatively, methods such as vacuum evaporation of TCNQ complexes have been taken. However, the technique for forming the TCNQ differential layer described above has the following problems. That is, in the case of the organic solvent solution method, the solubility of the TCNQ complex in the organic solvent is low, so that it is not possible to form a film with sufficient thickness. TCNQ
The complex is easily decomposed by organic solvents and stable conductivity cannot be obtained. After drying, the TCNQ complex recrystallizes into needle-like shapes and does not adhere closely to the electrode foil. In addition, in the case of the thermal melting method, the chemical stability in the molten state is extremely poor, and the conductivity decreases in a short period of time.In addition, many TCNQ complexes are in a thermally decomposed form, and tend to decompose before melting, resulting in extremely unstable properties. It was becoming. Furthermore, in the case of vapor deposition, it is impossible to form a TCNQ complex film on a surface other than the smooth electrode foil or the surface facing the evaporation source, which increases capacity and
It was difficult to reduce the loss (tanδ). [Purpose of the Invention] The present invention has been made in view of the above points, and is an electrolytic method that improves the contact efficiency between the electrode foil and the TCNQ complex, stabilizes various characteristics for a long time, and contributes to miniaturization. The object of the present invention is to provide a method for manufacturing a capacitor. [Summary of the Invention] The method for manufacturing an electrolytic capacitor of the present invention provides a method for manufacturing an electrolytic capacitor, in which both sides of one end in the width direction of an anode foil made of a band-shaped valve metal with a dielectric oxide film formed on the surface are used as a margin, and the surface other than the margin is A capacitor element obtained by depositing a TCNQ complex to form a TCNQ complex film, forming a cathode film on the surface of the TCNQ complex film to form a strip-shaped composite layer, and then winding the strip-shaped composite layer in the length direction. is heated by high-frequency induction to melt the TCNQ complex film, impregnating and adhering to the pores of the anode foil and the cathode film, and then forming electrode extension parts on both end faces of the capacitor element. It is something. [Embodiment of the Invention] An embodiment of the present invention will be described below. That is, as shown in FIG. 1, both sides of one end in the width direction of an anode foil 2 made of a strip of aluminum on which a dielectric oxide film 1 is formed by anodic oxidation treatment are defined as a margin 3, and the anode foil excluding the margin 3 2 on the surface
A TCNQ complex film 4 is formed by vacuum evaporation of the TCNQ complex, and a conductive paste using, for example, silver or copper powder as a copper conductive medium is applied to the surface of the TCNQ complex film 4 excluding the end face located in the margin portion 3. - The cathode film 5 is formed by drying or vacuum evaporation of a metal such as silver or copper to obtain the strip-shaped multilayer body 6. Then, the capacitor element 7 obtained by winding the strip-shaped multilayer body 6 in the length direction is inserted into the center of the heating coil 8 as shown in FIG.
A high frequency current of 22 OK Hz is passed through the heating coil 8 and the TCNQ complex film 4 is rapidly and briefly melted by the current heat generated in the anode foil 2 constituting the capacitor element 7, thereby etching the pores of the anode foil 2. Then, as shown in FIG. 3, silver or copper paste is applied to both end faces of the capacitor element 7 and dried. A lead-out portion 9 is formed, and the electrode lead-out portion 9
The lead terminal 10 is attached to the terminal, and then an exterior (not shown) is applied. According to the manufacturing method of the electrolytic capacitor configured as described above, compared to the conventional method of simply vapor depositing TCNQ complex, TCNQ complex is produced by high-frequency induction heating.
As the complex film 4 is melted, the TCNQ complex penetrates into the pores of the roughened surface of the anode foil 2 and into the cathode film 5, and the TCNQ complex film 4 is tightly adhered to these parts, resulting in large capacity, low tanδ, and long life. It becomes possible to In addition, the TCNQ complex film 4 is melted by short-time heating using high-frequency induction heating, and there is no need for long-term heating unlike the conventional hot-melting immersion method for TCNQ complexes, so thermal decomposition of the TCNQ complex is extremely small and the characteristics are maintained. The variation is small, and the TCNQ complex does not cause recrystallization and has good adhesion to the anode foil 2 and cathode film 5 compared to the solution coating method, and is extremely effective in improving and stabilizing properties. Next, an example of comparison between an embodiment of the present invention and a conventional reference example will be described. Example A The surface of a high-purity aluminum (purity 99.99%) foil was roughened by electrolytic etching, and then 2,2'-bipyridinium (TCNQ) 2 was applied to the surface of the strip-shaped anode foil on which a dielectric oxide film was formed by anodizing treatment. The complex is vacuum evaporated to form a 5 μm thick TCNQ complex film, and then Ag is vacuum evaporated onto the TCNQ complex film to reduce the thickness.
A capacitor element obtained by winding a band-shaped multilayer body having the configuration shown in Fig. 1 obtained by forming a 10 μm cathode film was subjected to high-frequency induction heating treatment for 5 seconds by the means shown in Fig. 2. Then, Ag paste is applied to both end faces of the capacitor element and dried to form an electrode lead-out part, a lead-out terminal is welded to the electrode lead-out part, and an epoxy resin is coated as an exterior structure. capacitor. Reference Example B A capacitor element formed with the same configuration as Example A above was coated with Ag paste on both end faces without high-frequency induction heating treatment and dried to form an electrode lead-out portion, and the lead-out terminal and exterior structure were changed to the same structure as in Example A above. An electrolytic capacitor with a rating of 25WV and 1μF that has the same configuration as . Reference Example C A capacitor element formed by winding an anode foil prepared with the same configuration as in Example A above and a cathode foil with a roughened surface of 99% pure aluminum foil through a glass cloth was heated and melted in advance. ′-bipyridinium (TCNQ) 2 complex solution - impregnated,
After that, it was pulled up, cooled, and made into a metal case exterior.
525WV 1μF electrolytic capacitor. Therefore, the high temperature (105°C) load life of Example A according to the present invention and conventional Reference Examples B and C is
The results of examining tanδ characteristics, leakage current characteristics, and comparison of molten volume are shown in Figures 4 and 5 and the table.
【表】
第4図および第5図から明らかなように、tanδ
特性および漏れ電流特性とも実施例Aは参考例
B,Cより安定しており、高温負荷寿命における
本発明のすぐれた効果を実証した。
また上表から明らかなように、同一定格で実施
例Aは参考例Bに対し容積比で1/3、参考例C
に対して1/5と大幅な小形化が可能であり、参
考例BまたはCと同一容積であれば大幅な大容量
化が可能である点を実証した。
なお、上記実施例では帯状弁作用金属箔として
アルミニウム箔を例示して説明したが、例えばタ
ンタル、ニオブ、チタンなどの弁作用金属箔を用
いたものに適用しても同効である。
また上記実施例ではTCNQ錯体として
2,2′−ビピリジニウム(TCNQ)2錯体を例示
して説明したが例えば4,4′−ジメチルビピリ
ジニウム(TCNQ)2錯体またはその他のTCNQ
錯体を用いたものに適用しても同効である。
[発明の効果]
本発明によればTCNQ錯体を陽極箔表面に均
一にかつ細孔内部まで完全に密着できるととも
に、陰極膜内部まで密着できることによつて特性
の安定化および小形化に貢献できる実用的価値の
高い電解コンデンサの製造方法を得ることができ
る。[Table] As is clear from Figures 4 and 5, tanδ
Both characteristics and leakage current characteristics of Example A were more stable than Reference Examples B and C, demonstrating the excellent effect of the present invention on high temperature load life. Also, as is clear from the above table, with the same rating, Example A is 1/3 the volume ratio of Reference Example B, and Reference Example C
It was demonstrated that it is possible to significantly reduce the size to 1/5 compared to that of Reference Example B or C, and that it is possible to significantly increase the capacity if the volume is the same as Reference Example B or C. In the above embodiment, aluminum foil was used as an example of the band-shaped valve metal foil, but the same effect can be obtained even if the valve metal foil is made of tantalum, niobium, titanium, or the like. Furthermore, in the above examples, 2,2'-bipyridinium (TCNQ) 2 complex was exemplified as the TCNQ complex, but for example, 4,4'-dimethylbipyridinium (TCNQ) 2 complex or other TCNQ complexes were explained.
The same effect is obtained when applied to a complex. [Effects of the Invention] According to the present invention, the TCNQ complex can be adhered uniformly and completely to the inside of the pores on the surface of the anode foil, and can also be adhered to the inside of the cathode membrane, thereby contributing to stabilization of characteristics and miniaturization. A method for manufacturing an electrolytic capacitor with high commercial value can be obtained.
第1図および第3図は本発明の一実施例を説明
するものに係り、第1図は帯状複層体の斜視図、
第2図はコンデンサ素子の高周波誘導加熱手段を
示す概略図、第3図は電極引出部を形成した後の
コンデンサ素子を示す断面図、第4図は時間−
tanδ特性曲線図、第5図は時間−漏れ電流特性曲
線図である。
1……誘電体酸化皮膜、2……陽極箔、3……
余白部、4……TCNQ錯体膜、5……陰極膜、
6……帯状複層体、7……コンデンサ素子、8…
…加熱コイル、9……電極引出部。
FIG. 1 and FIG. 3 are for explaining one embodiment of the present invention, and FIG. 1 is a perspective view of a strip-shaped multilayer body;
FIG. 2 is a schematic diagram showing high-frequency induction heating means for a capacitor element, FIG. 3 is a sectional view showing the capacitor element after forming an electrode extraction part, and FIG.
FIG. 5 is a time-leakage current characteristic curve diagram. 1... Dielectric oxide film, 2... Anode foil, 3...
Margin area, 4...TCNQ complex film, 5... cathode film,
6... Band-shaped multilayer body, 7... Capacitor element, 8...
... Heating coil, 9... Electrode extraction part.
Claims (1)
金属からなる陽極箔の表面に該陽極箔の幅方向一
端部両面を余白部としてTCNQ錯体を真空蒸着
してTCNQ錯体膜を形成する手段と、該TCNQ
錯体膜面上に陰極膜を形成し帯状複層体を得る手
段と、該帯状複層体を巻回しコンデンサ素子を形
成する手段と、該素子を高周波誘導加熱し前記
TCNQ錯体を前記陽極箔の細孔部および前記陰
極膜に含浸・密着する手段と、該手段の後前記コ
ンデンサ素子両端面に電極引出部を形成する手段
とを具備したことを特徴とする電解コンデンサの
製造方法。1. means for forming a TCNQ complex film by vacuum-depositing a TCNQ complex on the surface of an anode foil made of a band-shaped valve metal on which a dielectric oxide film is formed, with both sides of one end in the width direction of the anode foil as a margin; The TCNQ
means for forming a cathode film on the surface of the complex film to obtain a strip-like multilayer body; means for winding the strip-like multilayer body to form a capacitor element; and heating the element by high-frequency induction to
An electrolytic capacitor comprising means for impregnating and adhering a TCNQ complex to the pores of the anode foil and the cathode film, and means for forming electrode extension parts on both end surfaces of the capacitor element after the means. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6654086A JPS62222623A (en) | 1986-03-24 | 1986-03-24 | Manufacture of electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6654086A JPS62222623A (en) | 1986-03-24 | 1986-03-24 | Manufacture of electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62222623A JPS62222623A (en) | 1987-09-30 |
| JPH0439219B2 true JPH0439219B2 (en) | 1992-06-26 |
Family
ID=13318837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6654086A Granted JPS62222623A (en) | 1986-03-24 | 1986-03-24 | Manufacture of electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62222623A (en) |
-
1986
- 1986-03-24 JP JP6654086A patent/JPS62222623A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62222623A (en) | 1987-09-30 |
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