JPH0439931A - Formation method of oxide film for semiconductor device - Google Patents
Formation method of oxide film for semiconductor deviceInfo
- Publication number
- JPH0439931A JPH0439931A JP14620190A JP14620190A JPH0439931A JP H0439931 A JPH0439931 A JP H0439931A JP 14620190 A JP14620190 A JP 14620190A JP 14620190 A JP14620190 A JP 14620190A JP H0439931 A JPH0439931 A JP H0439931A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- ozone
- tube
- quartz tube
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 230000015572 biosynthetic process Effects 0.000 title description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 16
- 239000010453 quartz Substances 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 239000001301 oxygen Substances 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体装置の製造における酸化膜の形成方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming an oxide film in the manufacture of semiconductor devices.
（従来の技術）
従来、半導体装置の製造における酸化膜の形成なかんず
くシリコン基板表面へのその形成に当たっては、酸素中
で高温加熱することにより行なっている。(Prior Art) Conventionally, in the manufacture of semiconductor devices, the formation of oxide films, especially the formation of oxide films on the surfaces of silicon substrates, has been carried out by heating at high temperatures in oxygen.
熱酸化膜は酸化膜中に不純物を含有することが少ないた
めに膜の絶縁耐圧が高く、かつリーク電流が少ない。従
ってＭＯ３構造のトランジスタのゲート絶縁膜などの使
用される。Since the thermal oxide film contains few impurities in the oxide film, the dielectric strength of the film is high and the leakage current is low. Therefore, it is used as a gate insulating film of a transistor having an MO3 structure.
この熱酸化膜を形成するには周知のように、ヒータを巻
き付けた石英チューブから成る酸ｆヒ炉の中に半導体基
板（ウェハ）を入れ、該チューブの一端から酸素ガスあ
るいは水蒸気を流入させて行なう。As is well known, in order to form this thermal oxide film, a semiconductor substrate (wafer) is placed in an acid arsenal furnace consisting of a quartz tube wrapped around a heater, and oxygen gas or water vapor is introduced from one end of the tube. Let's do it.
（発明が解決しようとする課題）
しかしながら、近年半導体装置は高密度化してきており
、ゲート絶縁膜などはより薄膜化（１００〜５０人）を
必要としてきている。そのように薄膜になってくると前
述した従来の方法で形成した酸化膜では、絶縁耐圧の劣
化やひいてはリーク電流の増大が見られるようになって
きた。(Problems to be Solved by the Invention) However, in recent years, semiconductor devices have become denser, and gate insulating films and the like need to be made thinner (100 to 50 layers). As the oxide film becomes thinner, the dielectric strength of the oxide film formed by the conventional method described above deteriorates and leakage current increases.
（課題を解決するための手段）
本発明は、前述した薄膜化された酸化膜でも絶縁耐圧の
劣化やリーク電流の増大が生じない酸化膜形成方法とし
て、酸化に際しオゾンあるいはオゾンと酸素、オゾンと
水蒸気の混合ガスを導入して行なうようにしたものであ
る。(Means for Solving the Problems) The present invention provides a method for forming an oxide film that does not cause deterioration of dielectric strength or increase of leakage current even in the thinned oxide film described above. This is done by introducing a mixed gas of water vapor.
（作用）
本発明は前述のように酸化膜形成に当たってオゾンを導
入しながら行なうようにしたので、薄い酸化膜でも絶縁
耐圧やリーク特性の向上が実現できる。(Function) As described above, in the present invention, the oxide film is formed while introducing ozone, so that even a thin oxide film can improve dielectric strength and leakage characteristics.
（実施例）
第１図は第２図、第３図に示す装置（説明は後述）で、
酸素ガス中にオゾンを導入しながら高温加熱して形成し
た酸化膜と従来の方法で形成した酸化膜との絶縁耐圧分
布を示すグラフである。(Example) Fig. 1 shows the apparatus shown in Figs. 2 and 3 (explanation will be given later),
7 is a graph showing the dielectric strength distribution of an oxide film formed by high temperature heating while introducing ozone into oxygen gas and an oxide film formed by a conventional method.
横軸はＢＶ （Ｂｒｅａｋ−ｄｏｗｎ Ｖｏ ｌ ｔ
ａｇｅ）で単位はＭ Ｖ ／ ｃ ｍである。縦軸はＢ
Ｖ電圧でブレークダウンした不良率（％）である。The horizontal axis is BV (Break-down Vol.
age) and the unit is M V / cm. The vertical axis is B
This is the defective rate (%) that broke down at V voltage.
従来の方法での酸化膜は白抜きの棒グラフ、本実施例で
の酸化膜は斜線の棒グラフで表わしである。The oxide film in the conventional method is represented by an open bar graph, and the oxide film in this embodiment is represented by a diagonally lined bar graph.
図から解るように、従来の方法での酸化膜絶縁耐圧は９
ＭＶまでで１００％がブレークダウンしているのに対し
、本発明の実施例での酸化膜は、９ＭＶでブレークダウ
ンしたのはわずか５％であり８９％はＩＩＭＶでブレー
クダウンしており、絶縁耐圧の向上が明らかに認められ
る。この第１図はオゾン１００％のときのものであるが
、第４図にオゾンに水蒸気を９０：１０の割合で混合し
て酸化をした場合、第５図にオゾンにドライ０２を１：
１で混合して酸化した場合を示す。いずれも従来の方法
であるＯ、（酸素）だけで行なうより絶縁耐圧が向上し
ている。特に水蒸気を混合した第４図の場合はオゾン１
００％よりさらに５％向上している。As can be seen from the figure, the oxide film dielectric strength voltage in the conventional method is 9
While 100% of the oxide film breaks down up to MV, only 5% of the oxide film in the example of the present invention broke down at 9 MV, and 89% broke down at IIMV, making it difficult to insulate. The improvement in pressure resistance is clearly recognized. This figure 1 is for 100% ozone, but figure 4 shows that ozone and water vapor are mixed at a ratio of 90:10 for oxidation, and figure 5 shows that ozone and dry 02 are mixed at 1:10.
The case of mixing and oxidizing in No. 1 is shown. In both cases, the dielectric strength is improved compared to the conventional method using only O (oxygen). In particular, in the case of Figure 4 where water vapor is mixed, ozone 1
This is a further 5% improvement over 00%.
このようにオゾンを導入することにより薄い酸化膜の絶
縁耐圧ひいてはリーク電流の特性が向上することの原因
は、現在のところ極めて複雑で理論的には完全に解明さ
れてないが、酸素がオゾン化されていることから結合度
が強くなることや、より低温で酸化されること、および
オゾンによりシリコン基板の清浄化の可能性があること
などが原因として推測されている。The reason why the introduction of ozone improves the dielectric strength and leakage current characteristics of a thin oxide film is currently extremely complex and has not been completely elucidated theoretically, but the reason is that oxygen is converted into ozone. It is speculated that the causes include stronger bonding, oxidation at lower temperatures, and the possibility that ozone may clean the silicon substrate.
以上のようにオゾンを導入して酸化を行なうと良好な酸
化膜ができるが、そのような酸化膜を形成する装置を以
下に記述する。A good oxide film can be formed by introducing ozone and performing oxidation as described above, and an apparatus for forming such an oxide film will be described below.
第２図は、その装置の第１の実施例の構成図である。電
源９から電力を供給される加熱用ヒータｌＯを巻き付け
た石英チューブ６から成る従来と同様の酸化炉に、石英
チューブ６のガス供給口を管状に伸ばした形でその先に
オゾン発生部１を接続したものである。オゾン発生部ｌ
は該石英管２に電極３（金属プレート）を取り付け、該
電極３には高周波電源４が接続されである。石英管２の
一端である酸素導入口５から酸素ガスを導入し、高周波
電源４により高周波を励起することで酸素ガスはオゾン
となる。発生したオゾンは石英チューブ６内に導入され
ヒータ■０による加熱（６００〜１２００℃）でその内
部に置かれたウニ八８（シリコン基板）を酸化する。な
お本実施例におけるオゾン発生機としては日本オゾン株
式会社製のＱＡ−８Ｍ型を用いた。FIG. 2 is a block diagram of a first embodiment of the device. In a conventional oxidation furnace consisting of a quartz tube 6 wrapped around a heater lO supplied with power from a power source 9, an ozone generator 1 is installed at the end of the quartz tube 6 with the gas supply port extended into a tubular shape. It is connected. Ozone generating part l
An electrode 3 (metal plate) is attached to the quartz tube 2, and a high frequency power source 4 is connected to the electrode 3. Oxygen gas is introduced from an oxygen inlet 5 which is one end of the quartz tube 2, and is turned into ozone by exciting high frequency waves with a high frequency power source 4. The generated ozone is introduced into the quartz tube 6 and heated (600 to 1200° C.) by the heater 10 to oxidize the sea urchin 8 (silicon substrate) placed inside the tube. The ozone generator used in this example was model QA-8M manufactured by Nippon Ozone Co., Ltd.
第３図は本発明の方法を行なう装置の第２の実施例の構
成図である。第１図と同じ部分には同じ記号を付してあ
り構成、機能とも第１の実施例と同様であるので、その
部分のの説明は省く。FIG. 3 is a block diagram of a second embodiment of an apparatus for carrying out the method of the present invention. The same parts as in FIG. 1 are given the same symbols and have the same structure and function as the first embodiment, so a description of those parts will be omitted.
第１の実施例と異なる点は、オゾン発生部１の他に酸素
（０２）あるいは水蒸気（酸素（０□）と水素（Ｈ２）
）をその流量を調整して導入できる装置を付加したこ
とにある。The difference from the first embodiment is that in addition to the ozone generator 1, oxygen (02) or water vapor (oxygen (0□) and hydrogen (H2) are
) was added with a device that can adjust its flow rate and introduce it.
まず酸素導入管２１は石英チューブ６のオゾン発生部４
との接続部にマスフローメータ２４を設けてそれを介し
て接続する。周知のようにマスフローメータ２４はガス
の流量を自動調整する装置であり、オゾン発生部４かも
のオゾンも一緒に流葉調整するように、前記の通り石英
チューブに取り付ける。また前記酸素導入管２１とは別
に、もう一つ酸素導入管２２を設け、マスフローメータ
２５を通しで石英チューブ６に接続する。さらにもう一
つ水素導入管２３を設け、やはりマスフローメータを通
して石英チューブ６に接続する。かつ、前記酸素導入管
２２とこの水素導入管２３とは石英チューブ６内で酸素
と水素を合流させられるよう接続する。即ち水蒸気を作
るためである。First, the oxygen introduction pipe 21 is the ozone generating part 4 of the quartz tube 6.
A mass flow meter 24 is provided at the connection point with the air flow meter, and the connection is made through the mass flow meter 24. As is well known, the mass flow meter 24 is a device that automatically adjusts the flow rate of gas, and is attached to the quartz tube as described above so as to adjust the flow rate of the ozone in the ozone generator 4 as well. In addition to the oxygen introduction pipe 21, another oxygen introduction pipe 22 is provided, and is connected to the quartz tube 6 through a mass flow meter 25. Furthermore, another hydrogen introduction pipe 23 is provided, which is also connected to the quartz tube 6 through a mass flow meter. The oxygen introduction pipe 22 and the hydrogen introduction pipe 23 are connected within the quartz tube 6 so that oxygen and hydrogen can be combined. That is, to create water vapor.
以上の構成の装置により、オゾンと酸素との混合あるい
はオゾンと水蒸気との混合ガスを、その流量（混合比も
含めて）を調整して石英チューブ内６に導入することが
でき、前述したような良好な酸化膜の形成ができる。With the device configured as described above, it is possible to introduce a mixture of ozone and oxygen or a mixture of ozone and water vapor into the quartz tube 6 by adjusting the flow rate (including the mixing ratio). A good oxide film can be formed.
（発明の効果）
本発明は以上述べたように、酸化膜形成に当たってオゾ
ンを導入して行なうようにしたので、前述したような薄
い酸化膜でも絶縁耐圧の劣化やひいてはリーク電流の増
大が生じないばかりか、むしろ向上するものである。(Effects of the Invention) As described above, in the present invention, ozone is introduced when forming an oxide film, so even a thin oxide film as described above does not cause deterioration of dielectric strength voltage or increase of leakage current. Not only that, but it actually improves.
第１図は本発明の実施例と従来例での酸化膜の絶縁耐圧
分布図、第２図は本発明を行う装置の第１の実施例の構
成図、第３図は本発明を行う装置の第２の実施例の構成
図、第４図はオゾンと水蒸気との混合ガスで形成した酸
化膜の絶縁耐圧分布図、第５図はオゾンと酸素の混合ガ
スで形成した酸化膜の絶縁耐圧分布図である。
１−一一−−−−−オゾン発生部、
６−−−−−−−−石英チューブ、
２１．２２−−−一酸素導入管、
２３−−−−一一一水素導入管、
２４．２５−−−−マスフローメーク。Fig. 1 is a breakdown voltage distribution diagram of an oxide film in an embodiment of the present invention and a conventional example, Fig. 2 is a block diagram of a first embodiment of an apparatus for carrying out the present invention, and Fig. 3 is a diagram for an apparatus for carrying out the present invention. Fig. 4 is a diagram showing the dielectric strength distribution of an oxide film formed with a mixed gas of ozone and water vapor, and Fig. 5 is a diagram showing the dielectric strength voltage of an oxide film formed with a mixed gas of ozone and oxygen. It is a distribution map. 1-11----Ozone generating section, 6--------Quartz tube, 21.22--1 Oxygen introduction tube, 23--111 Hydrogen introduction tube, 24. 25---Mass flow make.
Claims (1)
めの加熱装置に、オゾンあるいはオゾンと他のガスとの
混合ガスを導入しながら酸化を行なうことを特徴とする
半導体装置の酸化膜形成方法。A method for forming an oxide film on a semiconductor device, the method comprising performing oxidation while introducing ozone or a mixed gas of ozone and other gas into a heating device for oxidation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14620190A JPH0439931A (en) | 1990-06-06 | 1990-06-06 | Formation method of oxide film for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14620190A JPH0439931A (en) | 1990-06-06 | 1990-06-06 | Formation method of oxide film for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0439931A true JPH0439931A (en) | 1992-02-10 |
Family
ID=15402413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14620190A Pending JPH0439931A (en) | 1990-06-06 | 1990-06-06 | Formation method of oxide film for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0439931A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5212119A (en) * | 1990-11-28 | 1993-05-18 | Hyundai Electronics Industries Co., Ltd. | Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device |
| US5693578A (en) * | 1993-09-17 | 1997-12-02 | Fujitsu, Ltd. | Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
| EP1351283A4 (en) * | 2000-12-05 | 2006-01-25 | Tokyo Electron Ltd | METHOD AND APPARATUS FOR TREATING AN ARTICLE TO BE TREATED |
| JP2009044093A (en) * | 2007-08-10 | 2009-02-26 | Tokyo Electron Ltd | Film forming method, film forming apparatus, and storage medium |
-
1990
- 1990-06-06 JP JP14620190A patent/JPH0439931A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5212119A (en) * | 1990-11-28 | 1993-05-18 | Hyundai Electronics Industries Co., Ltd. | Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device |
| US5693578A (en) * | 1993-09-17 | 1997-12-02 | Fujitsu, Ltd. | Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
| EP1351283A4 (en) * | 2000-12-05 | 2006-01-25 | Tokyo Electron Ltd | METHOD AND APPARATUS FOR TREATING AN ARTICLE TO BE TREATED |
| US7208428B2 (en) | 2000-12-05 | 2007-04-24 | Tokyo Electron Limited | Method and apparatus for treating article to be treated |
| JP2009044093A (en) * | 2007-08-10 | 2009-02-26 | Tokyo Electron Ltd | Film forming method, film forming apparatus, and storage medium |
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