JPH0440330A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPH0440330A JPH0440330A JP14756990A JP14756990A JPH0440330A JP H0440330 A JPH0440330 A JP H0440330A JP 14756990 A JP14756990 A JP 14756990A JP 14756990 A JP14756990 A JP 14756990A JP H0440330 A JPH0440330 A JP H0440330A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- temperature sensor
- thermistor
- organic
- coefficient thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000002861 polymer material Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 5
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 24
- -1 polyethylene Polymers 0.000 abstract description 5
- 239000004698 Polyethylene Substances 0.000 abstract description 4
- 229920000573 polyethylene Polymers 0.000 abstract description 4
- 239000006229 carbon black Substances 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、正特性サーミスタ（ＰＴＣ）を利用した温度
センサに関し、特に、有機正特性サーミスタ材を用いて
構成されたフレキシブルな温度センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a temperature sensor using a positive temperature coefficient thermistor (PTC), and particularly to a flexible temperature sensor constructed using an organic positive temperature coefficient thermistor material.
従来より、半導体セラミックスを用いて構成された正特
性サーミスタ（ＰＴＣ）や負特性サーミスタ（ＮＴＣ）
が、温度センサとして広く用いられている。これらの温
度センサは、ＰＴＣ特性またはＮＴＣ特性を示す半導体
セラミック素体の外表面に複数の電極を形成し、該セラ
ミック素体の半導体特性に起因するＰＴＣ特性やＮＴＣ
特性を利用してその抵抗温度変化により温度を検出する
ものである。Conventionally, positive characteristic thermistors (PTC) and negative characteristic thermistors (NTC) constructed using semiconductor ceramics have been used.
are widely used as temperature sensors. These temperature sensors have a plurality of electrodes formed on the outer surface of a semiconductor ceramic body that exhibits PTC characteristics or NTC characteristics, and have PTC characteristics or NTC characteristics caused by the semiconductor characteristics of the ceramic body.
The temperature is detected by the change in resistance using the characteristics.
しかしながら、上記のような半導体セラミ７クスを用い
たサーミスタ素子は、セラミックであるため機械的な衝
撃等により破損し易い、従って、大面積のセラミック素
体を形成するのが雛しいため、広い面積に渡って単一の
素子で温度検知をすることができず、複数個の温度セン
サを検知領域に分散させて取り付け、検知する必要があ
った。However, since the thermistor element using semiconductor ceramics as described above is ceramic, it is easily damaged by mechanical shock, etc. Therefore, it is difficult to form a large-area ceramic element, so it is difficult to form a large-area ceramic element. For many years, it has not been possible to detect temperature with a single element, and it has been necessary to install multiple temperature sensors distributed over the detection area.
また、被検知蹟域が凹凸を存していたり、曲面状に構成
されている場合には、半導体セラミックスが剛性を有し
、割れ易いものであるため、凹凸や曲面の曲率に応じて
、かなりの数の温度センサを被検知領域に分散して取り
付けねばならなかった。In addition, if the detection area has unevenness or a curved surface, semiconductor ceramics have rigidity and are easily broken, so depending on the unevenness and the curvature of the curved surface, the The number of temperature sensors had to be distributed and installed in the detection area.
すなわち、従来の半導体セラミックスを用いた温度セン
サでは、検知面積が広い場合や、曲面上の検知物の温度
を測る場合には、多数の温度センサを必要とするため、
温度検出にあたっての作業が煩維となったり、コストが
非常に高く付いたりするという問題があった。In other words, with conventional temperature sensors using semiconductor ceramics, a large number of temperature sensors are required when the sensing area is large or when measuring the temperature of an object to be detected on a curved surface.
There have been problems in that the work involved in temperature detection is tedious and the cost is extremely high.
よって、本発明の目的は、大面積の検知領域や凹凸ある
いは曲面を有する被検知物の温度検出を、単一の素子で
簡単にかつ高精度に行い得る温度センサを提供すること
にある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a temperature sensor that can easily and accurately detect the temperature of a detected object having a large detection area, unevenness, or curved surface using a single element.
（８１８１を解決するための手段）
本発明の温度センサは、有機高分子材料中に導電性粒子
が分散されてなる有機正特性サーミスタ材からなる可撓
性を有する長尺状の有機正特性サーミスタ帯と、該有機
正特性サーミスタ帯の外表面に所定距離を隔てて形成さ
れた複数の電極とを備えることを特徴とする。(Means for Solving Problem 8181) The temperature sensor of the present invention is a flexible elongated organic positive temperature coefficient thermistor material made of an organic positive temperature coefficient thermistor material in which conductive particles are dispersed in an organic polymer material. and a plurality of electrodes formed at a predetermined distance on the outer surface of the organic positive temperature coefficient thermistor band.
有機高分子材料中に導電性粒子を分散させてなる有機正
特性サーミスタ材が可撓性を有するため、本発明の温度
センサは、凹凸を有する部分や曲面状の検知領域に無理
なく沿わせるように取り付けられ得る。また、有機正特
性サーミスタ材が可撓性を有するため、すなわち跪くな
いため、かなり長い有機正特性サーミスタ帯を形成して
も機械的な衝撃等により破損し難い、従って、かなり長
い長尺状の有機正特性サーミスタ帯を用いて大面積の検
知領域の温度を検出し得る温度センサを構成することが
できる。Since the organic positive temperature coefficient thermistor material, which is made by dispersing conductive particles in an organic polymer material, is flexible, the temperature sensor of the present invention can be easily fitted over uneven areas or curved detection areas. can be attached to. In addition, since the organic positive temperature coefficient thermistor material has flexibility, that is, it does not bend, even if a fairly long organic positive temperature coefficient thermistor band is formed, it will not be easily damaged by mechanical impact. A temperature sensor capable of detecting the temperature of a large sensing area can be constructed using an organic positive temperature coefficient thermistor band.
すなわち、本発明は、耐脆性破壊性に優れた有機正特性
サーミスタ材を用いて温度センサを構成することにより
、大面積の検知領域の温度検出、並びに凹凸や曲面を有
する被検知物への取り付けを容易としたことに特徴を有
する。That is, the present invention constructs a temperature sensor using an organic positive temperature coefficient thermistor material with excellent brittle fracture resistance, so that it can detect temperature in a large detection area, and can be attached to an object to be detected that has an uneven or curved surface. The feature is that it is easy to use.
第１図（ａ）及び（ｂ）は、本発明の一実施例にかかる
温度センサの平面図及び側面図である。FIGS. 1(a) and 1(b) are a plan view and a side view of a temperature sensor according to an embodiment of the present invention.
温度センサ１は、可撓性を有する長尺状の有機正特性サ
ーミスタ帯２の一方主面上において、該有機正特性サー
ミスタ帯２の両端近傍にｉ極３゜４を形成した構造を有
する。The temperature sensor 1 has a structure in which i-poles 3.degree. 4 are formed near both ends of a flexible, elongated organic positive temperature coefficient thermistor band 2 on one main surface thereof.
有機正特性サーミスタｌＦ２は、ポリエチレンまたはポ
リプロピレン等の有機高分子材料に、カーボンブラック
、グラファイトまたは金属粉等の導電性粒子を分散させ
てなる有機正特性サーミスタ材により構成されており、
可撓性を有する厚みに成形されている。The organic positive temperature coefficient thermistor IF2 is composed of an organic positive temperature coefficient thermistor material in which conductive particles such as carbon black, graphite, or metal powder are dispersed in an organic polymer material such as polyethylene or polypropylene.
Molded to a thickness that provides flexibility.
電極３．４は、／ｌまたはＮｉ等の金属箔を貼り付ける
ことにより構成されているが、金属箔に代えて、Ａｇペ
ースト等を塗布・硬化させることにより形成してもよく
、また他の方法により電極３．４を形成してもよい。The electrode 3.4 is constructed by pasting a metal foil such as /l or Ni, but instead of the metal foil, it may be formed by applying and curing Ag paste or the like. The electrodes 3.4 may be formed by a method.
本実施例の温度センサ１では、有機正特性サーミスタ帯
２を被検知物に取り付け、ｔｌｆ＋３．４から通電し、
電極３．４間の抵抗変化を測定することにより、温度を
検出することができる。そして、有機正特性サーミスタ
帯２が可撓性を有するため、温度センサ１は、凹凸を有
する部分や曲面状の検知物等に無理なく沿わせることが
できる。In the temperature sensor 1 of this embodiment, the organic positive temperature coefficient thermistor band 2 is attached to the object to be detected, and the current is applied from tlf+3.4.
By measuring the resistance change between the electrodes 3.4, the temperature can be detected. Since the organic positive temperature coefficient thermistor band 2 has flexibility, the temperature sensor 1 can be easily placed along an uneven portion or a curved object to be detected.
また、有機正特性サーミスタ帯２は合成樹脂を主体とし
可撓性を有するため、長尺化が容易である。従って、大
面積の検知領域についても、単一の温度センサ１により
その温度を検出することができる。すなわち、従来の半
導体セラミックスを用いて構成された温度センサでは、
セラミックスが脆いため、大面積化あるいは長尺化が困
難であったため、大面積の検知領域の温度を検出するに
は多数の温度センサが必要であったのに対し、本実施例
の温度センサｌでは、単一の素子で大きな面積の検知領
域の温度を検出することができる。Furthermore, since the organic positive temperature coefficient thermistor band 2 is mainly made of synthetic resin and has flexibility, it can be easily made into a long length. Therefore, the temperature of a large detection area can be detected by the single temperature sensor 1. In other words, in a temperature sensor constructed using conventional semiconductor ceramics,
Due to the brittleness of ceramics, it was difficult to increase the area or length, so a large number of temperature sensors were required to detect the temperature of a large detection area. With this, it is possible to detect the temperature of a large sensing area with a single element.
次に、温度センサｌの具体的な実験結果につき説明する
。ポリエチレンにカーボンブランクを分散させて、厚み
０．５−の有機正特性サーミスタンートを成形し、５Ｘ
２００ｍｍの平面形状を有するように切断し、有機正特
性サーミスタ帯２を得た。この有機正特性サーミスタ帯
２の両端近傍に、金属箔からなる電極３．４を取り付け
、その抵抗温度特性を測定したところ、第３図の実線へ
で示す結果が得られた。Next, specific experimental results of the temperature sensor 1 will be explained. A carbon blank is dispersed in polyethylene to form a 0.5-thick organic positive temperature coefficient thermistant.
It was cut to have a planar shape of 200 mm to obtain an organic positive temperature coefficient thermistor band 2. Electrodes 3.4 made of metal foil were attached near both ends of the organic positive temperature coefficient thermistor band 2, and the resistance-temperature characteristics thereof were measured, and the results indicated by the solid line in FIG. 3 were obtained.
なお、第３図において縦軸は、２５°Ｃにおける抵抗値
Ｒ□に対する抵抗値Ｒの倍率を示す。In addition, in FIG. 3, the vertical axis indicates the magnification of the resistance value R with respect to the resistance value R□ at 25°C.
また、第２図に示す加熱装置を用いて、加熱試験を行っ
た。加熱装置５は、熱板６上に厚み５閤の鉄製ブロック
７を取り付け、該ブロック７の上面に幅１５ａｍ、長さ
２５０鋪及び厚み０．５−の鉄板８を取り付けた構造を
有する。鉄板８の上面に、温度センサｌを図示のように
貼り付け、熱板６上で２℃／１分の割合でブロック７の
温度を上昇させて、抵抗値を測定した。なお、ブロック
７として、温度センサ１の長手方向の長さＬがｌＯ閣、
５０鵬及び１００閣のものを用いて、それぞれ、上記抵
抗値の測定を行った。長さしの異なる複数種のブロック
７を用いて抵抗値を測定したのは、連続的な検知区間内
において、異常発熱部分が変化した場合に、該異常を検
知し得るかどうかを確かめるためである。結果を第３図
に一点鎖線Ｂ（ブロックの長さしがｌＯ−の場合）、二
点鎖線Ｃ（Ｌ−５０−の場合）及び破線Ｄ（Ｌ−１００
閣の場合）で示す。A heating test was also conducted using the heating device shown in FIG. The heating device 5 has a structure in which an iron block 7 with a thickness of 5 mm is mounted on a hot plate 6, and an iron plate 8 with a width of 15 am, a length of 250 mm, and a thickness of 0.5 mm is attached to the upper surface of the block 7. A temperature sensor 1 was attached to the upper surface of the iron plate 8 as shown in the figure, and the temperature of the block 7 was increased on the hot plate 6 at a rate of 2° C./1 minute to measure the resistance value. In addition, as the block 7, the length L in the longitudinal direction of the temperature sensor 1 is 10,
The above resistance values were measured using 50 Peng and 100 Kaku, respectively. The reason why the resistance value was measured using multiple types of blocks 7 with different lengths was to confirm whether it is possible to detect an abnormality when the abnormal heat generation part changes within a continuous detection section. be. The results are shown in Figure 3 as dashed-dotted line B (when the block length is lO-), dashed-double line C (when the block length is L-50-), and dashed line D (when the block length is L-100-).
In the case of a cabinet).
第３図から明らかなように、本実施例の温度センサｌに
よれば、連続的な検知区間内において異常発熱部分の発
生を検出することが可能であることがわかる。すなわち
、従来の半導体セラミックスを用いた温度センサでは、
連続的な検知区間内において発熱異常を検出するには複
数個の温度素子を取り付ける必要があったのに対し、本
実施例の温度センサでは、単一の温度センサｌのみで連
続的な検知区間内における異常発熱の発生を検出するこ
とができる。また、温度センサｌでは、有機正特性サー
ミスタ帯２が貼り付けられた領域全体を連続的に検出す
ることになるため、測定精度も高められる。As is clear from FIG. 3, it can be seen that the temperature sensor I of this embodiment can detect the occurrence of an abnormally heated portion within a continuous detection section. In other words, in the temperature sensor using conventional semiconductor ceramics,
While it was necessary to install multiple temperature elements to detect abnormal heat generation within a continuous detection zone, the temperature sensor of this embodiment can detect a continuous detection zone using only a single temperature sensor l. It is possible to detect the occurrence of abnormal heat generation within the body. Furthermore, since the temperature sensor 1 continuously detects the entire area to which the organic positive temperature coefficient thermistor band 2 is attached, measurement accuracy is also improved.
なお、有機正特性サーミスタは、その特性上の理由から
、抵抗変化倍率（Ｒ／Ｔ変化倍率）点が１００を超える
と抵抗変化の割合が非常に大きくなる。従って、検知抵
抗の抵抗変化倍率を１００倍以上に設定すれば、測定精
度はより高められる。Note that in organic positive temperature coefficient thermistors, due to their characteristics, when the resistance change magnification (R/T change magnification) point exceeds 100, the rate of resistance change becomes extremely large. Therefore, if the resistance change magnification of the detection resistor is set to 100 times or more, the measurement accuracy can be further improved.
上記実施例の説明では、有機正特性サーミスタ材を構成
する有機高分子材料としてポリエチレンを用いたが、合
成樹脂を変更することにより、第３図に示したＲ７７曲
線を変化させることができる。従って、樹脂を変えるこ
とにより、検知し得る温度範囲を変更することも容易で
ある。In the description of the above embodiment, polyethylene was used as the organic polymer material constituting the organic positive temperature coefficient thermistor material, but by changing the synthetic resin, the R77 curve shown in FIG. 3 can be changed. Therefore, by changing the resin, it is easy to change the detectable temperature range.
また、第１図に示した実施例１の温度センサでは、有機
正特性サーミスタ帯２の両端近傍に電極３．４が形成さ
ていたが、本発明において複数の電極は長尺状の有機正
特性サーミスタ帯の両端近傍に形成する必要は必ずしも
ない、また、３以上の電極を長尺状の有機正特性サーミ
スタ帯の外表面に適宜所定距離を隔てて分散配置しても
よい。Furthermore, in the temperature sensor of Example 1 shown in FIG. It is not necessarily necessary to form the electrodes near both ends of the thermistor band, and three or more electrodes may be dispersed at appropriate predetermined distances on the outer surface of the elongated organic positive temperature coefficient thermistor band.
本発明では、可撓性を有する有機正特性サーミスタ帯を
用いて温度センサが構成されているため、凹凸を有する
検知領域や曲面状の検知領域に温度センサを無理なく沿
わせて取り付けることができる。従って、単一の素子で
凹凸を有する検知領域や曲面状の検知領域の温度を検出
することができる。In the present invention, since the temperature sensor is constructed using a flexible organic positive temperature coefficient thermistor band, the temperature sensor can be attached easily along an uneven detection area or a curved detection area. . Therefore, it is possible to detect the temperature of a detection area having irregularities or a curved surface with a single element.
しかも、可撓性を有し、従来用いられていた半導体セラ
ミックスからなる温度センサに比べて割れ難いため、長
尺化も容易である。よって、長尺化が容易であるため、
単一の素子で大面積の検知領域の温度を検出することが
できる。Moreover, it has flexibility and is less likely to break than conventionally used temperature sensors made of semiconductor ceramics, so it can be easily made into a longer length. Therefore, since it is easy to lengthen the length,
A single element can detect the temperature of a large detection area.
すなわち、本発明によれば、凹凸や曲面を有する検知領
域や大面積の検知領域の温度を、簡単な作業でかつ安価
に検出することが可能となる。That is, according to the present invention, it is possible to detect the temperature of a detection area having unevenness or a curved surface or a detection area of a large area with a simple operation and at low cost.
しかも、従来のセラミックスからなるサーミスタで大面
積の検知領域の温度検出を行う場合には、複数個の温度
センサを配置していたため、複数個の温度センサ間の領
域は検出されていなかった。Moreover, when a conventional thermistor made of ceramic is used to detect temperature in a large detection area, a plurality of temperature sensors are arranged, so that the area between the plurality of temperature sensors is not detected.
これに対して、本発明の温度センサでは、長尺状の有機
正特性サーミスタ帯が配置された検出領域全体が連続的
に検出されるため、温度検出の精度も高められる。On the other hand, in the temperature sensor of the present invention, the entire detection region in which the elongated organic positive temperature coefficient thermistor band is arranged is continuously detected, so that the accuracy of temperature detection is also improved.
第１図（ａ）及び（ｂ）は、それぞれ、本発明の一実施
例にかかる温度センサの平面図及び側面図、第２図は実
施例の温度センサの抵抗温度特性を測定するための装置
を説明するための略図的側面図、第３図は実施例の温度
センサの抵抗値変化率と温度との関係を示す図である。
図において、１は温度センサ、２番よ有機圧４存性サー
ミスタ帯、３．４は電極を示す。
第１図FIGS. 1(a) and (b) are a plan view and a side view, respectively, of a temperature sensor according to an embodiment of the present invention, and FIG. 2 is an apparatus for measuring the resistance-temperature characteristics of the temperature sensor of the embodiment. FIG. 3 is a diagram showing the relationship between the rate of change in resistance value and temperature of the temperature sensor of the embodiment. In the figure, 1 is a temperature sensor, 2 is an organic pressure 4-sensitive thermistor band, and 3.4 is an electrode. Figure 1
Claims (1)
有機正特性サーミスタ材からなる可撓性を有する長尺状
の有機正特性サーミスタ帯と、前記有機正特性サーミス
タ帯の外表面に所定距離を隔てて形成された複数の電極
とを備えることを特徴とする温度センサ。(1) A flexible long organic positive temperature coefficient thermistor band made of an organic positive temperature coefficient thermistor material in which conductive particles are dispersed in an organic polymer material, and an outer surface of the organic positive temperature coefficient thermistor band. A temperature sensor comprising a plurality of electrodes formed at a predetermined distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2147569A JP2562225B2 (en) | 1990-06-05 | 1990-06-05 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2147569A JP2562225B2 (en) | 1990-06-05 | 1990-06-05 | Temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0440330A true JPH0440330A (en) | 1992-02-10 |
| JP2562225B2 JP2562225B2 (en) | 1996-12-11 |
Family
ID=15433322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2147569A Expired - Fee Related JP2562225B2 (en) | 1990-06-05 | 1990-06-05 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2562225B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128605A (en) * | 1986-11-18 | 1988-06-01 | ティーディーケイ株式会社 | Plastic positive characteristic thermistor |
| JPS63188904A (en) * | 1987-01-30 | 1988-08-04 | 株式会社村田製作所 | Manufacture of organic positive characteristics thermistor |
| JPH0241402U (en) * | 1988-04-08 | 1990-03-22 | ||
| JPH0438430A (en) * | 1990-06-01 | 1992-02-07 | Matsushita Electric Ind Co Ltd | air conditioner |
-
1990
- 1990-06-05 JP JP2147569A patent/JP2562225B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63128605A (en) * | 1986-11-18 | 1988-06-01 | ティーディーケイ株式会社 | Plastic positive characteristic thermistor |
| JPS63188904A (en) * | 1987-01-30 | 1988-08-04 | 株式会社村田製作所 | Manufacture of organic positive characteristics thermistor |
| JPH0241402U (en) * | 1988-04-08 | 1990-03-22 | ||
| JPH0438430A (en) * | 1990-06-01 | 1992-02-07 | Matsushita Electric Ind Co Ltd | air conditioner |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2562225B2 (en) | 1996-12-11 |
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