JPH04411B2 - - Google Patents
Info
- Publication number
- JPH04411B2 JPH04411B2 JP58181859A JP18185983A JPH04411B2 JP H04411 B2 JPH04411 B2 JP H04411B2 JP 58181859 A JP58181859 A JP 58181859A JP 18185983 A JP18185983 A JP 18185983A JP H04411 B2 JPH04411 B2 JP H04411B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- tap
- current interrupting
- semiconductor switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は変圧器のタツプ切換器に使用される
半導体スイツチの保護回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a protection circuit for a semiconductor switch used in a tap changer of a transformer.
第1図はタツプ切換器の半導体スイツチに設け
られた保護回路の従来例を示したもので、1はタ
ツプ切換変圧器であつて、切換タツプ1A,1B
を有し、回路電圧Vpを発生している。また、切
換タツプ1A,1B間にはタツプ間電圧Vsの電
位差が発生している(回路電圧Vpはタツプ間電
圧Vsと比べて十分に高い)。2A,2Bはタツプ
切換器の開閉素子(タツプ間電圧Vs切換え用の)
である逆並列サイリスタスイツチであつて、切換
タツプ1A,1Bに接続されており、サイリスタ
SCR1,SCR2を逆並列接続してなる。3A,
3Bは制限電圧Vaの電圧抑制素子(避雷器)で
あつて、それぞれ逆並列サイリスタスイツチ2
A,2Bに並列に接続されており、逆並列サイリ
スタスイツチ2A,2Bのアノードーカソード間
に加わる過電圧を制限電圧Va以下に抑制して過
電圧破壊を防ぐ。当然のことながら、制限電圧
Vaはタツプ間電圧Vsより高くとる必要があり、
逆並列サイリスタスイツチ2A,2Bは制限電圧
Vaより高い耐電圧能力を有する必要がある。(但
し、逆並列サイリスタスイツチ2A,2Bの耐電
圧能力を回路電圧Vpより高くすることまでは、
経済的、寸法的に不利である。)4A,4Bは逆
並列サイリスタスイツチ2A,2Bを保護するた
めの電流遮断素子(保護ヒユーズ)であつて、そ
れぞれ逆並列サイリスタスイツチ2A,2Bの負
荷5側に直列に接続されている。上記のように、
制限電圧Vaはタツプ間電圧Vsより高くされる
が、一方サイリスタの耐圧の面から回路電圧Vp
よりできるだけ低く設定する。そして、低くでき
る程度は、電圧制限素子の耐量と要求される回路
電圧Vpの印加時間により決定される(通常状態
においては、タツプ間電圧Vsのみの印加である
ので、問題はなく、具体的には、回路断のとき
の、回路保護しや断器等とも関係する)。
Fig. 1 shows a conventional example of a protection circuit provided in a semiconductor switch of a tap changer.
and generates a circuit voltage Vp. Further, a potential difference of the tap-to-tap voltage Vs occurs between the switching taps 1A and 1B (the circuit voltage Vp is sufficiently higher than the tap-to-tap voltage Vs). 2A and 2B are the switching elements of the tap changer (for switching the voltage between taps Vs)
It is an anti-parallel thyristor switch, which is connected to switching taps 1A and 1B, and the thyristor
SCR1 and SCR2 are connected in antiparallel. 3A,
3B is a voltage suppressing element (surge arrester) with a limiting voltage Va, and each anti-parallel thyristor switch 2
A and 2B are connected in parallel, and the overvoltage applied between the anode and cathode of the anti-parallel thyristor switches 2A and 2B is suppressed to below the limit voltage Va to prevent overvoltage breakdown. Naturally, the limiting voltage
Va needs to be higher than the tap-to-tap voltage Vs,
Anti-parallel thyristor switches 2A and 2B are limited voltage
It is necessary to have a withstand voltage capability higher than Va. (However, until the withstand voltage capability of anti-parallel thyristor switches 2A and 2B is made higher than the circuit voltage Vp,
It is economically and dimensionally disadvantageous. ) 4A and 4B are current interrupting elements (protection fuses) for protecting the anti-parallel thyristor switches 2A and 2B, and are connected in series to the load 5 side of the anti-parallel thyristor switches 2A and 2B, respectively. As described above,
The limit voltage Va is set higher than the tap-to-tap voltage Vs, but on the other hand, the circuit voltage Vp is set higher than the tap-to-tap voltage Vs.
Set as low as possible. The degree to which it can be lowered is determined by the withstand capacity of the voltage limiting element and the required application time of the circuit voltage Vp (in normal conditions, only the tap-to-tap voltage Vs is applied, so there is no problem; (also relates to circuit protection and disconnection in the event of a circuit break).
この構成において、今、逆並列サイリスタスイ
ツチ2Aがオンされて切換タツプ1Aが選択(点
孤)されているものとする。即ち、回路電圧Vp
と負荷5でほぼ決まる電流を通電している。この
とき、当然のことながら逆並列サイリスタスイツ
チ2Bはオフとなつている。この状態で、逆並列
サイリスタスイツチ2Bが誤点孤されると、切換
タツプ1A−1B間が短絡し、タツプ間電圧Vs
により定まる大きさの短絡過電流(正確には、負
荷5に流れる電流とのベクトル和)が切換タツプ
1A−逆並列サイリスタスイツチ2A−電流遮断
素子4A−電流遮断素子4B−逆並列サイリスタ
スイツチ2B−切換タツプ1Bを通して流れ、電
流遮断素子4A,4Bが溶断する。かくして、上
記短絡電流は遮断されるが、この電流遮断後に、
溶断した電流遮断素子4A,4Bの端子間(保護
ヒユーズが溶断したあとに形成されるギヤツプ)
間に回路電圧Vp(>Va>Vs)とほぼ同じ大きさ
の電圧が回復電圧として加わる(何故ならば、そ
れまで負荷5へ電流が流れていたが、遮断により
回路オープンになり、前記溶断したあとに形成さ
れるヒユーズの空間ギヤツプ間にほぼ回路電圧
Vpが発生するからである)。 In this configuration, it is assumed that the anti-parallel thyristor switch 2A is now turned on and the switching tap 1A is selected (fired). That is, the circuit voltage Vp
A current approximately determined by the load 5 is applied. At this time, as a matter of course, the anti-parallel thyristor switch 2B is off. If the anti-parallel thyristor switch 2B is erroneously fired in this state, a short circuit will occur between the switching taps 1A and 1B, and the voltage between the taps Vs
The short-circuit overcurrent (more precisely, the vector sum with the current flowing through the load 5) determined by the switching tap 1A - anti-parallel thyristor switch 2A - current interrupting element 4A - current interrupting element 4B - anti-parallel thyristor switch 2B - The current flows through the switching tap 1B, and the current interrupting elements 4A and 4B are blown out. Thus, the above short circuit current is interrupted, but after this current interruption,
Between the terminals of the fused current interrupting elements 4A and 4B (gap formed after the protective fuse is blown)
In between, a voltage of approximately the same magnitude as the circuit voltage Vp (>Va>Vs) is applied as a recovery voltage (because until then, current had been flowing to the load 5, but the circuit became open due to the interruption, and the aforementioned melted Approximately the circuit voltage across the space gap of the fuse that will be formed later.
This is because Vp occurs).
このため、上記従来の保護回路では、保護ヒユ
ーズ4A,4Bの端子間絶縁耐力を回路電圧Vp
以上とする必要があり、その絶縁距離を回路電圧
Vpに対してとるため、電流遮断素子は、その定
格電圧が上記回路電圧相当となり、大形で高価な
ものとなるという欠点があつた。 Therefore, in the conventional protection circuit described above, the dielectric strength between the terminals of the protective fuses 4A and 4B is determined by the circuit voltage Vp.
The insulation distance must be greater than or equal to the circuit voltage.
Vp, the current interrupting element has the disadvantage that its rated voltage is equivalent to the above-mentioned circuit voltage, making it large and expensive.
この発明は上記した従来の欠点を除去するため
になされたもので、半導体スイツチと電流遮断素
子との直列回路に対して並列に電圧抑制素子を接
続することによつて、上記電流遮断素子の電圧定
格を大幅に低減し、小型化とコスト低減を図るこ
とができる半導体スイツチの保護回路を提供する
ことを目的とする。
This invention was made to eliminate the above-mentioned conventional drawbacks, and by connecting a voltage suppressing element in parallel to a series circuit of a semiconductor switch and a current interrupting element, the voltage of the current interrupting element can be reduced. The purpose of the present invention is to provide a protection circuit for semiconductor switches that can significantly reduce the rating, reduce size, and reduce costs.
〔発明の実施例〕
第2図は、この発明の実施例を示す回路図であ
つて、電圧抑制素子3Aが逆並列サイリスタスイ
ツチ2Aと保護ヒユーズ4Aとの直列回路に対し
て並列に接続され、電圧抑制素子3Bが逆並列サ
イリスタスイツチ2Bと保護ヒユーズ4Bとの直
列回路に対して並列に接続されている点におい
て、第1図のものと相違する。[Embodiment of the Invention] FIG. 2 is a circuit diagram showing an embodiment of the present invention, in which a voltage suppressing element 3A is connected in parallel to a series circuit of an anti-parallel thyristor switch 2A and a protection fuse 4A, This differs from the one shown in FIG. 1 in that the voltage suppressing element 3B is connected in parallel to the series circuit of the anti-parallel thyristor switch 2B and the protective fuse 4B.
この構成において、前記した如く、逆並列サイ
リスタスイツチ2Aが点孤している状態で、逆並
列サイリスタスイツチ2Bが誤点孤されると、切
換タツプ1A−1B間が短絡し、タツプ間電圧
Vsにより定まる大きさの短絡過電流(正確には、
負荷5に流れる電流とのベクトル和)が切換タツ
プ1A−逆並列サイリスタスイツチ2A−電流遮
断素子4A−電流遮断素子4B−逆並列サイリス
タスイツチ2B−切換タツプ1Bを通して流れ、
電流遮断素子4A,4Bが溶断する。 In this configuration, as described above, if the anti-parallel thyristor switch 2B is erroneously fired while the anti-parallel thyristor switch 2A is firing, a short circuit occurs between the switching taps 1A and 1B, and the voltage between the taps increases.
Short-circuit overcurrent of magnitude determined by Vs (more precisely,
The vector sum of the current flowing through the load 5) flows through the switching tap 1A - anti-parallel thyristor switch 2A - current interrupting element 4A - current interrupting element 4B - anti-parallel thyristor switch 2B - switching tap 1B,
Current interrupting elements 4A and 4B are fused.
上記短絡過電流が遮断されると、電流遮断素子
4A,4Bの前記した端子間に回路電圧Vpが現
われ始めるが、この電圧のレベルがほぼ電圧抑制
素子3A,3Bの制限電圧Vaに達すると、これ
ら電圧抑制素子3A,3Bが動作するので、電流
遮断素子4Aの端子間に加わる電圧は、逆並列サ
イリスタスイツチ2Aの電圧降下が制限電圧Va
に比べ非常に小さいので無視して考えると、制限
電圧Vaの大きさに抑制される。電流遮断素子4
Bについても同様である。従つて、電流遮断素子
4A,4Bの定格電圧(遮断直後に端子間に発生
する回復電圧に耐えなければならない電圧)は回
路電圧Vpではなく、これよりはるかに低い制限
電圧Vaをクリアするものでよいことになる(前
述の通り、制限電圧Vaは回路電圧Vpより低く設
定されているから)。 When the short-circuit overcurrent is interrupted, a circuit voltage Vp begins to appear between the terminals of the current interrupting elements 4A and 4B, but when the level of this voltage reaches approximately the limiting voltage Va of the voltage suppressing elements 3A and 3B, Since these voltage suppressing elements 3A and 3B operate, the voltage applied between the terminals of the current interrupting element 4A is such that the voltage drop across the anti-parallel thyristor switch 2A is the limiting voltage Va.
Since it is very small compared to , if you ignore it, it will be suppressed to the size of the limit voltage Va. Current interrupting element 4
The same applies to B. Therefore, the rated voltage of the current interrupting elements 4A and 4B (the voltage that must withstand the recovery voltage generated between the terminals immediately after interrupting the circuit) is not the circuit voltage Vp, but clears the limiting voltage Va, which is much lower than this. This is a good thing (as mentioned above, the limit voltage Va is set lower than the circuit voltage Vp).
逆並列サイリスタスイツチ2A,2Bの過電圧
保護については、電流遮断素子4A,4Bの電圧
降下は0であるから、電圧抑制素子3A,3Bに
よつて従来と同様に行われる。 Overvoltage protection for the anti-parallel thyristor switches 2A, 2B is performed by the voltage suppressing elements 3A, 3B in the same manner as in the past, since the voltage drop across the current interrupting elements 4A, 4B is 0.
上記はタツプ切換器に組込まれた半導体スイツ
チの場合について説明したが、この発明は電力を
制御する回路や機器装置の構成要素となる半導体
スイツチに実施して同様の効果を得ることがてき
る。 Although the above description has been made of the case of a semiconductor switch incorporated in a tap changer, the present invention can be applied to a semiconductor switch that is a component of a power control circuit or a device to obtain similar effects.
また、半導体スイツチは逆並列サイリスタスイ
ツチに限定されるものではない。 Further, the semiconductor switch is not limited to an anti-parallel thyristor switch.
この発明は以上説明した通り、半導体スイツチ
とその電流遮断素子との直列回路に対して電圧抑
制素子を並列に設ける構成としたことにより、上
記電流遮断素子の電圧定格を上記電圧抑制素子の
制限電圧レベルに低減することができるので、小
型化とコスト低減を行うことができる。
As explained above, this invention has a structure in which a voltage suppressing element is provided in parallel to a series circuit of a semiconductor switch and its current interrupting element, so that the voltage rating of the current interrupting element is set to the limiting voltage of the voltage suppressing element. Since it can be reduced to a level of
第1図はタツプ切換器の半導体スイツチに設け
た保護回路の従来例を示す回路図、第2図はこの
発明の実施例を示す回路図である。
図において、1……タツプ切換変圧器、1A,
1B……切換タツプ、2A,2B……逆並列サイ
リスタスイツチ、3A,3B……電圧抑制素子、
4A,4B……電流遮断素子である保護ヒユー
ズ。なお、図中、同一符号は同一または相当部分
を示す。
FIG. 1 is a circuit diagram showing a conventional example of a protection circuit provided in a semiconductor switch of a tap changer, and FIG. 2 is a circuit diagram showing an embodiment of the present invention. In the figure, 1...Tap switching transformer, 1A,
1B...Switching tap, 2A, 2B...Anti-parallel thyristor switch, 3A, 3B...Voltage suppression element,
4A, 4B...Protection fuses that are current interrupting elements. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
それぞれ挿入される半導体スイツチを過電流保護
する電流遮断素子と該半導体スイツチを過電圧保
護する電圧抑制素子を備える半導体スイツチの保
護回路において、 上記電流遮断素子は上記半導体スイツチに直列
に接続され、この直列回路に対して並列に上記電
圧抑制素子が接続されていることを特徴とする半
導体スイツチの保護回路。[Scope of Claims] 1. A semiconductor switch equipped with a current interrupting element for overcurrent protection of a semiconductor switch inserted between each switching tap of a tap changer and a load, and a voltage suppression element for overvoltage protection of the semiconductor switch. A protection circuit for a semiconductor switch, characterized in that the current interrupting element is connected in series with the semiconductor switch, and the voltage suppressing element is connected in parallel with the series circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181859A JPS6074928A (en) | 1983-09-28 | 1983-09-28 | Protecting circuit of semiconductor switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181859A JPS6074928A (en) | 1983-09-28 | 1983-09-28 | Protecting circuit of semiconductor switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074928A JPS6074928A (en) | 1985-04-27 |
| JPH04411B2 true JPH04411B2 (en) | 1992-01-07 |
Family
ID=16108079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58181859A Granted JPS6074928A (en) | 1983-09-28 | 1983-09-28 | Protecting circuit of semiconductor switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074928A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2924762T3 (en) * | 2016-10-27 | 2022-10-10 | Hitachi Energy Switzerland Ag | Electronic tap changer module for transformers |
-
1983
- 1983-09-28 JP JP58181859A patent/JPS6074928A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074928A (en) | 1985-04-27 |
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