JPH0441235A - Treatment of low thermal expansion metal plate and metal base board and metal base wiring board using same metal plate - Google Patents
Treatment of low thermal expansion metal plate and metal base board and metal base wiring board using same metal plateInfo
- Publication number
- JPH0441235A JPH0441235A JP14733090A JP14733090A JPH0441235A JP H0441235 A JPH0441235 A JP H0441235A JP 14733090 A JP14733090 A JP 14733090A JP 14733090 A JP14733090 A JP 14733090A JP H0441235 A JPH0441235 A JP H0441235A
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- metal plate
- low thermal
- coupling agent
- expansion metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
Landscapes
- ing And Chemical Polishing (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は低熱膨張金属板の処理法並びにその処理法によ
り得られた金属板を使用した金属ベース基板及び金属ベ
ース配線板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of processing a low thermal expansion metal plate, and a metal base substrate and a metal base wiring board using the metal plate obtained by the treatment method.
Z 低熱膨張金属板が、鉄ニツケル合金板である請求項
1記載の低熱膨張金属板の処理法。Z. The method for treating a low thermal expansion metal plate according to claim 1, wherein the low thermal expansion metal plate is an iron-nickel alloy plate.
3、 シランカップリング剤がアミノシラン系カップリ
ング剤である請求項1又は2記載の低熱膨張金属板の処
理法。3. The method for treating a low thermal expansion metal plate according to claim 1 or 2, wherein the silane coupling agent is an aminosilane coupling agent.
シリコンチ・ンブやセラミンクチ・ンブキャリアのよう
に熱膨張の小さい素子を搭載したときの素子と配線板と
の接続部の信顛性を向上するために42合金やインバー
等のような低熱膨張金属板を用いた金属ベース配線板が
提唱されている。しかし、低膨張金属と絶縁層として用
いられる有機樹脂材料との熱膨張差が大きいため、金属
板と絶縁層の界面に熱応力が発生しやすいこと及びこれ
らの金属がアルミニウム等に比べ接着性に劣ること等か
ら金属板と絶縁層の接着力が十分でないという問題があ
る。そこで、これらの金属板と有機樹脂材料からなる絶
縁層との接着力を改良する方法として、特開昭61−2
95693号公報に示されているように、インバー板の
表面に圧延や電解、蒸着等でアルミニウム、鉄、亜鉛等
を付着させる方法や特開昭63−261863号公報に
示されているように、アルミニウム層を鉄ニツケル系合
金層の両面に積層させる方法等がある。In order to improve the reliability of the connection between the element and the wiring board when mounting an element with low thermal expansion such as a silicon chip or ceramic chip carrier, a low thermal expansion metal plate such as 42 alloy or invar is used. A metal-based wiring board has been proposed. However, because there is a large difference in thermal expansion between the low-expansion metal and the organic resin material used as the insulating layer, thermal stress is likely to occur at the interface between the metal plate and the insulating layer, and these metals have poor adhesive properties compared to aluminum, etc. There is a problem in that the adhesive strength between the metal plate and the insulating layer is not sufficient due to poor performance. Therefore, as a method for improving the adhesive strength between these metal plates and an insulating layer made of an organic resin material, Japanese Patent Laid-Open No. 61-2
As shown in Japanese Patent Publication No. 95693, a method of attaching aluminum, iron, zinc, etc. to the surface of an Invar plate by rolling, electrolysis, vapor deposition, etc., and as shown in Japanese Patent Application Laid-Open No. 63-261863, There is a method in which aluminum layers are laminated on both sides of an iron-nickel alloy layer.
特開昭61−295693号公報に示される方法は、金
属板表面に圧延や電解、蒸着等によりアルミニウムを付
着させるため必ずしも量産性に優れているとはいい難い
。The method disclosed in JP-A-61-295693 is not necessarily suitable for mass production because aluminum is attached to the surface of a metal plate by rolling, electrolysis, vapor deposition, etc.
また、特開昭63−261863号公報に示される方法
は、アルミニウム層と42合金等の低熱膨張金属板とを
複層化した金属板を用いる方法であるが、このような金
属板は、一般的に市販されておらず、製造するためには
、高価な製造装置が必要となる。また積層するのに時間
がかかるため、量産化されたとしても、高価なものとな
る。Furthermore, the method disclosed in JP-A No. 63-261863 uses a multi-layered metal plate consisting of an aluminum layer and a low thermal expansion metal plate such as 42 alloy. It is not commercially available and requires expensive manufacturing equipment to manufacture. Furthermore, since it takes time to stack the layers, even if it is mass-produced, it will be expensive.
本発明は、安価に容易に低熱膨張金属板の処理を行え、
その処理により優れた接着性を有する低熱膨張金属板が
得られる低熱膨張金属板の処理法、その処理を行った金
属板を使用する金属ベース基板及び金属ベース配線板を
提供するものである。The present invention allows low thermal expansion metal plates to be easily processed at low cost.
The present invention provides a method for processing a low thermal expansion metal plate, in which a low thermal expansion metal plate having excellent adhesive properties can be obtained by the treatment, and a metal base substrate and a metal base wiring board using the metal plate subjected to the treatment.
本発明者らは前記課題を解決するために鋭意研究を行っ
た結果、低熱膨張金属板の表面を特定な方法により特定
な深さに粗面化した後、特定な処理を行うことによって
、課題が解決されることを見出しこの知見に基づいて本
発明を完成するZこ至った。The inventors of the present invention have conducted intensive research to solve the above problem, and have found that the problem can be solved by roughening the surface of a low thermal expansion metal plate to a specific depth using a specific method, and then performing a specific treatment. Z has discovered that the problem can be solved, and based on this knowledge, he has completed the present invention.
すなわち、本発明は熱膨張率が7 X 10−”/’C
以下の低熱膨張金属板の表面を機械研削により3〜10
μmの深さに粗面化した後、研削面をシランカップリン
グ剤で処理することを特徴とする低熱膨張金属板の処理
法を提供するものである。That is, the present invention has a thermal expansion coefficient of 7 x 10-"/'C
The surface of the following low thermal expansion metal plate is mechanically ground to 3 to 10
The present invention provides a method for treating a low thermal expansion metal plate, which is characterized in that after roughening the surface to a depth of μm, the ground surface is treated with a silane coupling agent.
低熱膨張金属板は熱膨張率が7 X 10−”/’C以
下のものを用い〜この値を超えるものを用いると配線板
にした場合素子と接続部の十分な信頼性が得られない。A low thermal expansion metal plate with a coefficient of thermal expansion of 7 x 10-''/'C or less is used. If a metal plate exceeding this value is used, sufficient reliability of the element and the connecting portion cannot be obtained when used as a wiring board.
低熱膨張金属としては、鉄ニツケル合金である42合金
やインバー等が好適に用いられる。As the low thermal expansion metal, 42 alloy, which is an iron-nickel alloy, Invar, or the like is suitably used.
金属板の表面を粗面化する方法としては、サンドブラス
ト、化学粗化、機械研削等があるが本発明においてはこ
れを機械研削で行う。機械研削としてはサンドペーパー
を用いる方法が好適に行われる。サンドブラストや化学
粗化では、同程度の粗面を形成しても、機械研削と同等
の効果は得られない。研削による金属板の表面の粗面化
の程度は3〜10μmの深さ、より望ましくは5〜8μ
mの深さになるようにする。。粗面化の深さが3μm未
満の場合は接着力が十分でなく、10μmを超える深さ
にすることは粗面化に時間を要すること及びその後での
絶縁層形成時に、流動性のよい樹脂を用いなければなら
なくなる等の制限が生ずる。5〜8μmの深さの場合に
より優れた接着性が得られる。Methods for roughening the surface of a metal plate include sandblasting, chemical roughening, mechanical grinding, etc., and in the present invention, mechanical grinding is used. Mechanical grinding is preferably carried out by using sandpaper. Sandblasting and chemical roughening cannot achieve the same effect as mechanical grinding, even if they form a rough surface of the same degree. The degree of roughening of the surface of the metal plate by grinding is 3 to 10 μm in depth, more preferably 5 to 8 μm.
The depth should be m. . If the depth of the roughening is less than 3 μm, the adhesive force will not be sufficient, and if the depth exceeds 10 μm, it will take time to roughen the surface, and a resin with good fluidity will be required when forming the insulating layer. Restrictions arise, such as having to use . Better adhesion is obtained with a depth of 5-8 μm.
このように金属板を研削した後、シランカップリング剤
処理を行う。市販のシランカッブリング剤溶液は通常、
シランカップリング剤がメタノール、エタノールなどの
有機溶剤で希釈されている。After grinding the metal plate in this manner, it is treated with a silane coupling agent. Commercially available silane coupling agent solutions are typically
The silane coupling agent is diluted with an organic solvent such as methanol or ethanol.
シランカップリング剤処理はこの溶液を更に0.5〜5
重量%程度まで水で希釈後、この液への浸漬、ハケ塗り
やスプレーなどで金属表面に塗布し乾燥することにより
行われる。シランカップリング剤としてはエポキシシラ
ン系カップリング剤、アミノシラン系カップリング剤等
が用いられ、これらの中でもアミノシラン系カップリン
グ剤が好適に用いられる。Silane coupling agent treatment further increases this solution by 0.5 to 5
After diluting with water to about % by weight, it is applied to the metal surface by immersion in this liquid, brushing or spraying, and then dried. As the silane coupling agent, an epoxysilane coupling agent, an aminosilane coupling agent, etc. are used, and among these, an aminosilane coupling agent is preferably used.
本発明の金属ベース基板はこのような処理をした金属板
を用い、金属板上に絶縁層となる有機樹脂又は有機樹脂
と無機物の複合材料を介して導体箔を設けることにより
作製される。有機樹脂としてはエポキシ、ポリイミド、
ポリアミド等の電気的特性に優れた樹脂が適している。The metal base substrate of the present invention is produced by using a metal plate subjected to such treatment and providing a conductive foil on the metal plate via an organic resin or a composite material of an organic resin and an inorganic material to serve as an insulating layer. Organic resins include epoxy, polyimide,
Resins with excellent electrical properties such as polyamide are suitable.
無機物としては、アルミナ粉やシリカ粉等、またガラス
布等のような織布やアルミナペーパー等が用いられる。As the inorganic material, alumina powder, silica powder, etc., woven cloth such as glass cloth, alumina paper, etc. are used.
導体箔としては、銅箔や銅と他の金属との複合箔等が用
いられる。As the conductor foil, copper foil, a composite foil of copper and other metals, etc. are used.
本発明の金属ベース配線板はこのようにして得られた金
属ベース基板をエツチングして配線形成を行うことによ
り作製される。The metal base wiring board of the present invention is produced by etching the thus obtained metal base substrate to form wiring.
本発明の低膨張金属板、金属ベース基板、金属ベース配
線板は金属板の熱膨張率が小さいために熱膨張の小さい
素子を搭載したときの素子と配線板との接続部の信転性
が向上し、また低熱膨張金属板の表面が3〜10μmの
深さに粗面化され、シランカップリング剤処理されてい
ることにより絶縁層と金属表面との機械的結合(投錨効
果)が得られ、接着性が向上する。Since the low expansion metal plate, metal base substrate, and metal base wiring board of the present invention have a low coefficient of thermal expansion, the reliability of the connection between the element and the wiring board when mounting an element with low thermal expansion is low. Furthermore, the surface of the low thermal expansion metal plate is roughened to a depth of 3 to 10 μm and treated with a silane coupling agent, resulting in a mechanical bond (anchoring effect) between the insulating layer and the metal surface. , adhesion is improved.
以下、本発明を実施例に基づいて詳細に説明するが、本
発明はこれに限定されるものではない。Hereinafter, the present invention will be explained in detail based on Examples, but the present invention is not limited thereto.
実施例1
42合金(熱膨張率4.5 X 10−6/”C)の低
熱膨張金属板1の表面を240番のサンドペーパーを装
着したベルト式の平面研削盤(通称ベルトサンダー)を
用いて研削し、第1図に示すような処理面11を有する
低熱膨張金属板を得た。このときの処理面の粗さ(粗面
の深さ約4〜5μm)を測定した結果を第4図(a)に
示す。このものにアミノシラン系カップリング剤(日本
ユニカー−製A1100)の1重量%溶液中に浸漬後乾
燥してアミノ系カップリング剤処理を行った。次いで銅
箔にアルミナフィラーを約50体積%添加したエポキシ
樹脂ワニスを70μm厚さに塗布し、乾燥後、先に処理
した42合金板と積層し加圧加熱により第2図に示すよ
うな絶縁層2及び導体箔3を有する金属ベース基板を得
た。この基板の銅箔を20−角だけ残し、他の部分の銅
箔をエツチングした試料を作製し、320°Cのはんだ
バスに浮かせ銅箔のふくれるまでの時間を測定したとこ
ろ、10個の試料についての平均値は約3分であった。Example 1 The surface of a low thermal expansion metal plate 1 made of alloy 42 (coefficient of thermal expansion 4.5 x 10-6/''C) was polished using a belt-type surface grinder (commonly known as a belt sander) equipped with No. 240 sandpaper. A low thermal expansion metal plate having a treated surface 11 as shown in FIG. This is shown in Figure (a).This material was immersed in a 1% by weight solution of an aminosilane coupling agent (A1100 manufactured by Nippon Unicar Co., Ltd.) and then dried and treated with an amino coupling agent.Then, the copper foil was coated with an alumina filler. An epoxy resin varnish containing about 50% by volume of A metal base board was obtained.A sample was prepared by leaving only the 20-square copper foil of this board and etching the other parts of the copper foil, and floating it in a solder bath at 320°C to measure the time it takes for the copper foil to swell. When measured, the average value for 10 samples was about 3 minutes.
前記金属ベース基板をエンチングすると第3図に示すよ
うな回路形成した導体箔を有する金属配線板が得られる
。When the metal base substrate is etched, a metal wiring board having a circuit-formed conductor foil as shown in FIG. 3 is obtained.
比較例1.2.3
■表面を400番のサンドペーパーで研削(粗面の深さ
約1μm)後、実施例1と同様にアミノカップリング剤
処理した42合金板(表面の粗さを第4図ら)に示す、
)、
■表面をサンドブラスト処理(粗面の深さ4μm)後、
実施例1と同様にアミノシランカップリング剤処理した
42合金板(表面の粗さを第4図(C)に示す。)、
■表面を240番のサンドペーパーで実施例1と同じ装
置を用いて研削した42合金板(シランカップリング剤
処理なし。)
を得た。Comparative Example 1.2.3 ■ After grinding the surface with No. 400 sandpaper (depth of the rough surface approximately 1 μm), a 42 alloy plate treated with an amino coupling agent in the same manner as in Example 1 (the surface roughness was As shown in Figure 4 et al.
), ■After sandblasting the surface (depth of rough surface 4μm),
A 42 alloy plate treated with an aminosilane coupling agent in the same manner as in Example 1 (the surface roughness is shown in Figure 4 (C)); A ground 42 alloy plate (not treated with silane coupling agent) was obtained.
上記■、■、0042合金板を用いたほかは実施例1と
同様にして金属ベース基板を作製し、実施例1と同一の
試験を行った。その結果、■の処理を行ったものでは1
.5分、■では2分、■では1.5分といずれも実施例
1に比べ1/2〜2/3の値であった。なお、ここで同
一の樹脂を用いていることからはんだパスでのふ(れる
までの時間は、層間の接着力を反映している。Metal base substrates were prepared in the same manner as in Example 1, except that the above-mentioned (1), (2), and 0042 alloy plates were used, and the same tests as in Example 1 were conducted. As a result, 1
.. 5 minutes, 2 minutes for ■, and 1.5 minutes for ■, all values 1/2 to 2/3 compared to Example 1. Note that since the same resin is used here, the time it takes for the soldering pass to swell reflects the adhesive strength between the layers.
本発明の表面処理法はアルミニウムを付着させるなどの
処理をしなくてもよく、汎用的な方法で42合金板を研
削し、シランカップリング剤処理するだけで、優れた接
着性を有する低熱膨張金属板を得ることができる。この
ため、生産性に優れており、その工業的価値は極めて大
である。The surface treatment method of the present invention does not require any treatment such as adhering aluminum, and simply grinds the 42 alloy plate using a general-purpose method and treats it with a silane coupling agent.It has excellent adhesive properties and low thermal expansion. You can get metal plates. Therefore, it has excellent productivity and its industrial value is extremely large.
第1図は本発明の一実施例を示す低熱膨張金属板の処理
法を行った低熱膨張金属板の断面図、第2図は、本発明
の一実施例を示す金属ベース基板の断面図、第3図は本
発明の一実施例を示す金属ベース配線板の断面図である
。第4図は金属板の表面の粗化の程度を示す測定図であ
る。
符号の説明
1 低熱膨張金属板
11 低熱膨張金属板の処理面
2 絶縁層 3 導体箔
31 回路形成した導体箔FIG. 1 is a sectional view of a low thermal expansion metal plate subjected to a low thermal expansion metal plate processing method showing an embodiment of the present invention, and FIG. 2 is a sectional view of a metal base substrate showing an embodiment of the present invention. FIG. 3 is a sectional view of a metal base wiring board showing an embodiment of the present invention. FIG. 4 is a measurement diagram showing the degree of roughening of the surface of a metal plate. Explanation of symbols 1 Low thermal expansion metal plate 11 Processed surface of low thermal expansion metal plate 2 Insulating layer 3 Conductor foil 31 Conductor foil with circuit formed
Claims (5)
属板の表面を機械研削により3〜10μmの深さに粗面
化した後、研削面をシランカップリング剤で処理するこ
とを特徴とする低熱膨張金属板の処理法。1. After roughening the surface of a low thermal expansion metal plate with a coefficient of thermal expansion of 7 x 10^-^6/℃ or less by mechanical grinding to a depth of 3 to 10 μm, the ground surface is treated with a silane coupling agent. Characteristic processing method for low thermal expansion metal plates.
1記載の低熱膨張金属板の処理法。2. 2. The method for treating a low thermal expansion metal plate according to claim 1, wherein the low thermal expansion metal plate is an iron-nickel alloy plate.
グ剤である請求項1又は2記載の低熱膨張金属板の処理
法。3. The method for treating a low thermal expansion metal plate according to claim 1 or 2, wherein the silane coupling agent is an aminosilane coupling agent.
低熱膨張金属板を用いたことを特徴とする金属ベース基
板。4. A metal base substrate characterized by using a low thermal expansion metal plate obtained by the treatment method according to any one of claims 1 to 3.
ことを特徴とする金属ベース配線板。5. A metal base wiring board characterized in that wiring is formed on the metal base substrate according to claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14733090A JPH0441235A (en) | 1990-06-07 | 1990-06-07 | Treatment of low thermal expansion metal plate and metal base board and metal base wiring board using same metal plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14733090A JPH0441235A (en) | 1990-06-07 | 1990-06-07 | Treatment of low thermal expansion metal plate and metal base board and metal base wiring board using same metal plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0441235A true JPH0441235A (en) | 1992-02-12 |
Family
ID=15427745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14733090A Pending JPH0441235A (en) | 1990-06-07 | 1990-06-07 | Treatment of low thermal expansion metal plate and metal base board and metal base wiring board using same metal plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0441235A (en) |
-
1990
- 1990-06-07 JP JP14733090A patent/JPH0441235A/en active Pending
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