JPH0441495B2 - - Google Patents

Info

Publication number
JPH0441495B2
JPH0441495B2 JP58132179A JP13217983A JPH0441495B2 JP H0441495 B2 JPH0441495 B2 JP H0441495B2 JP 58132179 A JP58132179 A JP 58132179A JP 13217983 A JP13217983 A JP 13217983A JP H0441495 B2 JPH0441495 B2 JP H0441495B2
Authority
JP
Japan
Prior art keywords
needle
chip
semiconductor wafer
contact
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58132179A
Other languages
Japanese (ja)
Other versions
JPS6024030A (en
Inventor
Junichi Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP58132179A priority Critical patent/JPS6024030A/en
Publication of JPS6024030A publication Critical patent/JPS6024030A/en
Publication of JPH0441495B2 publication Critical patent/JPH0441495B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) この発明は半導体ウエハ測定方法に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor wafer measuring method.

(従来の技術および発明が解決しようとする課
題) 従来の半導体ウエハ測定装置の適用に際して
は、まず、ウエハ内に同一チツプが数百個存在し
ているうちの1個のチツプに対し、オペレーター
がチツプ内のパツドにプローブカード針を接触さ
せて適正な位置であることを顕微鏡、モニターテ
レビ等で確認する。その後、半導体ウエハ測定装
置の機械精度(自動確認装置の精度も含む)とチ
ツプの繰り返し精度のみを信頼し、パツドにプロ
ーブカード針が接触されているという仮定で、プ
ローブカード針と接続されているテスターでチツ
プの良否を判定している。
(Prior Art and Problems to be Solved by the Invention) When applying a conventional semiconductor wafer measuring device, an operator first measures one chip among hundreds of identical chips on a wafer. Touch the probe card needle to the pad inside the chip and confirm that it is in the correct position using a microscope, monitor TV, etc. After that, we rely only on the mechanical accuracy of the semiconductor wafer measuring device (including the accuracy of the automatic confirmation device) and the repeatability of the chip, and on the assumption that the probe card needle is in contact with the pad, we connect it to the probe card needle. A tester is used to judge the quality of the chip.

上記の判定作業により、不良チプであると判定
された時点では、当該チツプが真実不良なの
か、半導体ウエハの電極パツド面に対しプロー
ブカード針が非接触で不良と判定されたのか、以
上のいずれとも判別することかできない。したが
つて実際のウエハプローバによる測定において連
続的に不良が続いた場合は、不良チツプが続く前
のチツプに戻し、再度プローブカード針列を戻し
た位置のチツプに接触させて試験をやり直してい
る。測定結果が前の結果と同様に不良であればチ
ツプの不良として決定してしまつている。しか
し、プローブカード針と半導体チツプの電極パツ
ド表面との接触不良は依然として救済されていな
い。このように自動の半導体ウエハ測定装置であ
りながら、より多くの人員を介在させて試験を行
つているのが実状である。
When a chip is determined to be defective through the above determination process, it is possible to determine whether the chip is truly defective or whether the probe card needle was determined to be defective because it was not in contact with the electrode pad surface of the semiconductor wafer. It is not possible to distinguish either. Therefore, if the actual wafer prober continues to fail during measurement, the test is repeated by returning to the previous chip before the number of defective chips continued, and touching the probe card needle row to the chip at the returned position again. . If the measurement result is as bad as the previous result, it is determined that the chip is defective. However, the poor contact between the probe card needle and the surface of the electrode pad of the semiconductor chip has not yet been resolved. Even though this is an automatic semiconductor wafer measuring device, the actual situation is that testing is performed with the intervention of many more people.

また、半導体ウエハのチツプの試験において、
特に高集積された今日,パツド内にぎりぎりの条
件でプローブカード針が接触し、良品として判定
されるチツプが存在する。このようなチツプもウ
エハ状態から個々に切る離してパツケージングす
ることにより、集積回路(IC)製品となるが、
前述のようにぎりぎりの条件で良品となつたチツ
プは、使用している集積回路製品に良品としての
余裕がなく、他の良品で製造される集積回路製品
と比べて早期に故障を起こし、よつて信頼性の低
下につながる。
In addition, in testing semiconductor wafer chips,
Particularly in today's highly integrated chips, there are chips that are judged to be non-defective because the probe card needle comes into contact with the inside of the pad under the narrowest possible conditions. These chips are also made into integrated circuit (IC) products by cutting them individually from the wafer and packaging them separately.
As mentioned above, a chip that becomes a non-defective product under the marginal conditions does not have the margin to be a non-defective product in the integrated circuit product it is used in, and it may fail earlier than other integrated circuit products manufactured using other non-defective products, resulting in serious damage. This leads to a decrease in reliability.

この発明は上記の問題点に対処してなされたも
ので、測定時のプローブ針の被測定体との接触状
況を測定後判定できるようにした半導体ウエハ測
定方法を提供するものである。
The present invention has been made in response to the above-mentioned problems, and provides a method for measuring a semiconductor wafer in which the state of contact of a probe needle with an object to be measured during measurement can be determined after measurement.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) この発明は被測定半導体ウエハ内の各チツプに
ついてプローブ針を順次接触させて電気的測定を
行う方法において、上記各チツプについて電気的
測定後に上記プローブ針により接触針跡を検出す
る工程と、この工程により検出された針跡から上
記測定時におけるプローブ針の接触状況を検査す
る工程と、この工程による検査結果から当該チツ
プの測定結果を確認する工程とを具備してなるこ
とを特徴とする。
(Means for Solving the Problems) This invention provides a method for electrically measuring each chip in a semiconductor wafer to be measured by successively contacting each chip with a probe needle, in which each chip is contacted by the probe needle after electrical measurement. The method includes a step of detecting a needle mark, a step of inspecting the contact status of the probe needle at the time of the above measurement from the needle mark detected by this step, and a step of confirming the measurement result of the tip from the test result of this step. It is characterized by:

(作用) この発明はプローブ針を接触させて当該チツプ
の測定をした後この測定時の針跡を検出し、この
針跡からプローブ針の電気的接触状況を検査し、
この検査結果からの検査の不否を決定するため、
不良検査時間を減少させるとともに半導体ウエハ
検査結果の信頼性が向上するばかりでなく、良品
を不良品と判定する誤検査を減少させ、歩留りを
向上させる効果を有する。
(Function) The present invention measures the chip by bringing a probe needle into contact with it, detects the needle mark at the time of measurement, and inspects the electrical contact status of the probe needle from this needle mark.
In order to decide whether or not to conduct the test based on the test results,
This not only reduces defective inspection time and improves the reliability of semiconductor wafer inspection results, but also reduces erroneous inspections in which non-defective products are determined to be defective, and has the effect of improving yield.

(実施例) 以下に、本発明の半導体ウエハ測定方法の実施
例を第1図ないし第3図を用いて説明する。
(Example) An example of the semiconductor wafer measuring method of the present invention will be described below with reference to FIGS. 1 to 3.

第3図の制御部10の制御により、測定機構1
1の載置台3をX軸、Y軸、Z軸方向およびZ軸
芯における周方向に駆動機構(系)12で移動さ
せ、ウエハ1を位置決めした後、第1図bに示す
載置台3に、被測定半導体ウエハ1を真空吸着し
て仮固定する。次に制御部10の制御で、プロー
ブカード針2でチツプ4のパツド5上に接触させ
る。このときの位置を第1図aに示すごとく、O
点とする。上記接触によりパツド5に形成された
針跡を認識する位置をP点とする。すなわち第1
図bに示すごとく、プローブカード針2がチツプ
4上に接触した時、パツド5に針跡Rが付加す
る。この針跡Rが付加されたチツプ4を、第3図
に示した認識装置13で認識する位置Pに移動す
る。この移動は、制御部(系)10の指示により
駆動機構12、すなわち載置台3を動かすX軸、
Y軸用モータにより指定された位置まで移動させ
る。
Under the control of the control unit 10 shown in FIG.
After positioning the wafer 1 by moving the wafer 1 in the X-axis, Y-axis, Z-axis directions, and in the circumferential direction around the Z-axis center using the driving mechanism (system) 12, the wafer 1 is moved on the mounting table 3 shown in FIG. , the semiconductor wafer 1 to be measured is temporarily fixed by vacuum suction. Next, under the control of the control section 10, the probe card needle 2 is brought into contact with the pad 5 of the chip 4. The position at this time is O as shown in Figure 1a.
Point. The position where the needle mark formed on the pad 5 due to the above contact is recognized is defined as point P. That is, the first
As shown in FIG. b, when the probe card needle 2 comes into contact with the tip 4, a needle mark R is added to the pad 5. The tip 4 to which the needle mark R has been added is moved to a position P where it is recognized by the recognition device 13 shown in FIG. This movement is performed on the X-axis, which moves the drive mechanism 12, that is, the mounting table 3, according to instructions from the control unit (system) 10.
Move to the specified position using the Y-axis motor.

このような操作により第2図aで示したすでに
記憶(メモリ)14に記憶されている指定領域
(条件)Qの読み出し情報と、第2図bに示した
現実に上記手段により付加された針跡を位置Pで
認識装置13により認識することにより得られ
た、付加された針跡Rの領域とを比較する。その
際、第2図bに示すごとく指定領域Q内に針跡R
の領域が位置し、この針跡Rの領域の面積が予め
定められた許容範囲内である場合には、プローブ
カード針2とパツド5との接触は適切であると認
識装置13で判断する。この結果を記憶14に記
憶する。判断の情報が「適切な接触」の場合は連
続して試験することが可能となる。
Through such operations, the readout information of the specified area (condition) Q already stored in the memory 14 shown in FIG. 2a and the needle added by the above means to the actual area shown in FIG. 2b The area of the added needle mark R obtained by recognizing the mark at position P by the recognition device 13 is compared. At that time, as shown in Fig. 2b, the needle mark R is placed within the designated area Q.
If the area of the needle mark R is within a predetermined tolerance, the recognition device 13 determines that the contact between the probe card needle 2 and the pad 5 is appropriate. This result is stored in memory 14. If the judgment information is "appropriate contact," it will be possible to test continuously.

同様にして第2図cに示すように、すでに記憶
14に設定してある指定領域(条件)Q内に現実
に付加した針跡Rが位置していないと認識装置1
3で判断される場合には、プローブカード針2と
パツド5とは「不適切な接触」であると認識装置
13で判断する。もちろんこの際、テスタ15に
よる試験が不可能であることの信号を制御部10
から発したり載置台3を制御部10の、例えばマ
イクロプロセツサ等で制御することにより、自動
的に位置を修正することも可能である。
Similarly, as shown in FIG.
3, the recognition device 13 determines that there is "inappropriate contact" between the probe card needle 2 and pad 5. Of course, at this time, a signal indicating that the test by the tester 15 is not possible is transmitted to the control unit 10.
It is also possible to automatically correct the position by emitting a signal from the controller 10 or by controlling the mounting table 3 with a microprocessor or the like of the control unit 10.

(発明の効果) この発明の半導体ウエハ測定方法は以上のよう
なプロセスで行われるので、数百個にわたつて全
てのチツプに針跡を付加した後、従来ならオペレ
ーターによつて顕微鏡、モニターテレビ等で拡大
した当該チツプ内のパツドの針跡を目視検査する
無駄があつたが、本発明ではこのような無駄を除
去できる。したがつて、プローブ針の接触状況の
検査を折り込みながら試験することにより、当該
試験結果の信頼性をその都度確認でき、半導体ウ
エハ測定方法の信頼性の向上は計り知れないもの
がある。
(Effects of the Invention) The semiconductor wafer measurement method of the present invention is carried out through the process described above, so that after adding needle marks to all the chips over several hundred chips, conventionally an operator would have to use a microscope, monitor TV, etc. However, in the present invention, such waste can be eliminated. Therefore, by performing the test while checking the contact status of the probe needle, the reliability of the test results can be confirmed each time, and the reliability of the semiconductor wafer measurement method is immeasurably improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例説明図、第2図は第1
図による針跡検査を説明するための略図、第3図
は第1図装置のブロツク図である。 1……半導体ウエハ、2……プローブカード
針、3……載置台、4……チツプ、5……パツ
ド、10……制御部、11……測定機構、12…
…駆動機構、13……認識装置、14……記憶、
15……テスタ、Q……指定面積、R……針跡。
FIG. 1 is an explanatory diagram of an embodiment of the present invention, and FIG.
FIG. 3 is a schematic diagram for explaining the needle trace inspection by means of a diagram, and FIG. 3 is a block diagram of the apparatus shown in FIG. 1. DESCRIPTION OF SYMBOLS 1... Semiconductor wafer, 2... Probe card needle, 3... Mounting table, 4... Chip, 5... Pad, 10... Control unit, 11... Measurement mechanism, 12...
... Drive mechanism, 13 ... Recognition device, 14 ... Memory,
15... Tester, Q... Specified area, R... Needle mark.

Claims (1)

【特許請求の範囲】[Claims] 1 被測定半導体ウエハ内の各チツプについてプ
ローブ針を順次接触させて電気的測定を行なう方
法において、上記各チツプについて電気的測定後
に上記プローブ針による接触針跡を検出する工程
と、この工程により検出された針跡から上記測定
時におけるプロープ針の接触状況を検査する工程
と、この工程による検査結果から当該チツプの測
定結果を確認する工程とを具備してなることを特
徴とする半導体ウエハ測定方法。
1. In a method of electrically measuring each chip in a semiconductor wafer to be measured by sequentially contacting each chip with a probe needle, a step of detecting the trace of the contact needle by the probe needle after electrically measuring each chip, and detecting by this step. A method for measuring a semiconductor wafer, comprising the steps of: inspecting the contact status of the probe needle at the time of the measurement from the needle traces made; and confirming the measurement result of the chip from the inspection result of this step. .
JP58132179A 1983-07-19 1983-07-19 Semiconductor wafer prober Granted JPS6024030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58132179A JPS6024030A (en) 1983-07-19 1983-07-19 Semiconductor wafer prober

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58132179A JPS6024030A (en) 1983-07-19 1983-07-19 Semiconductor wafer prober

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP41769690A Division JP2717884B2 (en) 1990-12-15 1990-12-15 Semiconductor wafer measurement method
JP2417697A Division JPH0828408B2 (en) 1990-12-15 1990-12-15 Semiconductor wafer measurement method
JP14953791A Division JPH0618229B2 (en) 1991-05-24 1991-05-24 Semiconductor wafer inspection system

Publications (2)

Publication Number Publication Date
JPS6024030A JPS6024030A (en) 1985-02-06
JPH0441495B2 true JPH0441495B2 (en) 1992-07-08

Family

ID=15075226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58132179A Granted JPS6024030A (en) 1983-07-19 1983-07-19 Semiconductor wafer prober

Country Status (1)

Country Link
JP (1) JPS6024030A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713990B2 (en) * 1985-04-02 1995-02-15 東京エレクトロン株式会社 Positioning method of probe needle and pad
JPH0714757B2 (en) * 1986-09-29 1995-02-22 株式会社タツノ・メカトロニクス Fuel oil delivery vehicle
JPS63265441A (en) * 1987-04-23 1988-11-01 Tokyo Electron Ltd Measuring device
US5041845A (en) * 1987-10-13 1991-08-20 Canon Kabushiki Kaisha Heat transfer recording apparatus with a common drive source for selective plural functions
JPH01257074A (en) * 1988-04-07 1989-10-13 Canon Inc Thermal transfer recorder
JPH0828408B2 (en) * 1990-12-15 1996-03-21 東京エレクトロン株式会社 Semiconductor wafer measurement method
JP2726651B2 (en) * 1996-04-22 1998-03-11 東京エレクトロン株式会社 Marking method for defective element
JP5370370B2 (en) 2008-12-26 2013-12-18 富士通セミコンダクター株式会社 PROBER, TEST DEVICE, AND SEMICONDUCTOR CHIP INSPECTION METHOD

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121638A (en) * 1982-01-12 1983-07-20 Nec Home Electronics Ltd Checking method for probe for wafer prober
JPS58169922A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Automatic prober

Also Published As

Publication number Publication date
JPS6024030A (en) 1985-02-06

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