JPH0442077A - Measuring method for magnetic field - Google Patents
Measuring method for magnetic fieldInfo
- Publication number
- JPH0442077A JPH0442077A JP2150401A JP15040190A JPH0442077A JP H0442077 A JPH0442077 A JP H0442077A JP 2150401 A JP2150401 A JP 2150401A JP 15040190 A JP15040190 A JP 15040190A JP H0442077 A JPH0442077 A JP H0442077A
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- sensor
- voltage
- magnetic
- electrode
- magnetic field
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、弱い磁界を検出する方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for detecting weak magnetic fields.
[従来の技術]
磁界の測定は、物質の磁気的性質の測定において最も基
本的な測定の1つであり、非常に重要である。[Prior Art] Measurement of a magnetic field is one of the most basic measurements in measuring the magnetic properties of substances, and is very important.
従来、磁界を測定する方法としては、半導体のホール効
果を利用したホール素子や、半導体や磁性体等の磁気抵
抗効果を利用した磁気抵抗素子をセンサとして用いる方
法が知られているが、これらの素子を用いた場合の測定
範囲は数ガラスル数十キロガウスのオーダーである。Conventionally, known methods for measuring magnetic fields include using a Hall element that utilizes the Hall effect of a semiconductor, or a magnetoresistive element that utilizes the magnetoresistive effect of a semiconductor or magnetic material as a sensor. The measurement range when using the element is on the order of several glass to several tens of kilogauss.
弱い磁界を測定する方法としては、パーマロイ等の磁心
に検出巻線を巻回したフラックスゲートをセンサとして
用いて、該フラックスゲートに被測定磁界が印加された
ときに生じる検出巻線の出力の変化から磁界を測定する
方法が知られている。A method for measuring weak magnetic fields is to use a flux gate with a detection winding wound around a magnetic core such as permalloy as a sensor, and to measure the change in the output of the detection winding that occurs when the magnetic field to be measured is applied to the flux gate. A method of measuring magnetic fields from
また核磁気共鳴(NMR)を利用した磁界センサや、電
子スピン共鳴(E S R)を利用したセンサを用いる
方法、或いはジョセフソン効果の磁界による干渉性を利
用して磁界を高感度で測定する超伝導量子干渉計[スク
イド(SQUID)と呼ばれる。]を用いる方法も知ら
れている。スクイドを用いれば、10−9ガウス程度ま
での小さな磁束密度を測定することができる。In addition, magnetic fields can be measured with high sensitivity by using magnetic field sensors that utilize nuclear magnetic resonance (NMR), sensors that utilize electron spin resonance (ESR), or by utilizing the coherence of magnetic fields due to the Josephson effect. Superconducting quantum interferometer [called SQUID]. ] is also known. Using the SQUID, it is possible to measure magnetic flux densities as small as about 10-9 Gauss.
[発明が解決しようとする課題]
ホール効果を利用した磁気センサは弱い磁界を測定する
ことが困難であるという問題があった。[Problems to be Solved by the Invention] A magnetic sensor using the Hall effect has a problem in that it is difficult to measure a weak magnetic field.
また弱い磁界の測定が可能なフラックスゲート、NMR
,ESR,或いはスクイドは、その構造が複雑で製造が
面倒であるため著しく高価になるだけでなく、取り扱い
か面倒であるという問題かあった。Fluxgate and NMR capable of measuring weak magnetic fields
, ESR, or SQUID have a complicated structure and are difficult to manufacture, which not only makes them extremely expensive, but also makes them difficult to handle.
本発明の目的は、簡単な構造のセンサを用いて弱い磁界
の測定を行うことができる磁界の検出方法を提案するこ
とにある。An object of the present invention is to propose a magnetic field detection method that can measure weak magnetic fields using a sensor with a simple structure.
[課題を解決するための手段]
本発明の測定方法は、超伝導体と常任導体金属との接合
部に電流を流した状態で該接合部に磁界を作用させた場
合に、該接合部の抵抗値か磁界の強さに応じて変化する
現象を利用して、磁界の強さまたは方向を検出するもの
である。[Means for Solving the Problems] The measuring method of the present invention is characterized in that when a magnetic field is applied to a junction between a superconductor and a permanent conductive metal while a current is flowing through the junction, The strength or direction of the magnetic field is detected by using the phenomenon that the resistance value changes depending on the strength of the magnetic field.
本発明の測定方法においては、超伝導体からなる基体に
常伝導体の金属からなる共通電極と電流電極と電圧電極
とを接合し、少なくとも共通電極を設けた面を平坦な磁
気感知面としたセンサを用い、該共通電極と電流電極と
を通して定電流を流す手段と、定電流を流した状態で共
通電極と電圧電極との間に生じる電圧を磁気検知電圧と
して検出する電圧検出手段とを設ける。そしてセンサの
温度を超伝導体の臨界温度以下に保った状態で、被測定
磁界中でセンサの姿勢を変化させて磁気検知電圧の最大
値と最小値とを求め、磁気検知電圧の最大値と最小値と
の差から被測定磁界の強さを求める。In the measurement method of the present invention, a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface provided with the common electrode is made a flat magnetic sensing surface. A means for flowing a constant current through the common electrode and the current electrode using a sensor, and a voltage detection means for detecting the voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage are provided. . Then, while keeping the temperature of the sensor below the critical temperature of the superconductor, the maximum and minimum values of the magnetic detection voltage are determined by changing the attitude of the sensor in the magnetic field to be measured. Find the strength of the magnetic field to be measured from the difference from the minimum value.
上記センサの姿勢を変化させて磁気検知電圧の最小値と
最大値とを求める過程は、例えば次の手順でセンサを回
転させることにより行うことができる。即ち、センサの
回転中心軸を予め定めておき、先ず被測定磁界中でセン
サを任意の第1の軸線の回りに回転させて磁気検知電圧
が最大になる位置を求める。次いでこの磁気検知電圧か
最大になる位置におけるセンサの磁気感知面と直交する
第2の軸線の回りにセンサを回転させて磁気検知電圧の
最小値と最大値とを求める。The process of changing the attitude of the sensor to obtain the minimum and maximum values of the magnetic detection voltage can be performed, for example, by rotating the sensor in the following steps. That is, the rotation center axis of the sensor is determined in advance, and the sensor is first rotated around an arbitrary first axis in the magnetic field to be measured to find the position where the magnetic detection voltage is maximum. Next, the sensor is rotated about a second axis perpendicular to the magnetic sensing surface of the sensor at the position where the magnetic sensing voltage is at its maximum, and the minimum and maximum values of the magnetic sensing voltage are determined.
また被測定磁界の方向を求める場合には、被測定磁界中
でセンサの姿勢を変化させて磁気検知電圧が最小になる
位置を検知電圧最小位置として求めれば、該検知電圧最
小位置での磁気感知面に直角な方向が被測定磁界の方向
となる。In addition, when determining the direction of the magnetic field to be measured, if the position of the sensor is changed in the magnetic field to be measured and the position where the magnetic detection voltage is minimum is determined as the minimum detection voltage position, the magnetic sensing at the minimum detection voltage position is determined. The direction perpendicular to the plane is the direction of the magnetic field to be measured.
この場合、センサを次の手順で回転させることにより検
知電圧最小位置を求めることができる。In this case, the minimum detected voltage position can be determined by rotating the sensor in the following procedure.
即ちセンサの回転中心軸を予め定めておき、先ず被測定
磁界中でセンサを第1の軸線の回りに回転させて磁気検
知電圧が最大になる位置を基準位置として求める。次い
でこの基準位置におけるセンサの磁気感知面と直交する
第2の軸線の回りにセンサを回転させ、磁気検知電圧か
最小になる位置を検知電圧最小位置とする。That is, the rotation center axis of the sensor is determined in advance, and the sensor is first rotated around the first axis in the magnetic field to be measured, and the position where the magnetic detection voltage is maximum is determined as the reference position. Next, the sensor is rotated around a second axis perpendicular to the magnetic sensing surface of the sensor at this reference position, and the position where the magnetic detection voltage is minimum is defined as the minimum detection voltage position.
また被測定磁界の方向は次の方法によっても求めること
ができる。The direction of the magnetic field to be measured can also be determined by the following method.
センサの回転中心軸を予め定めておき、先ず被測定磁界
中でセンサを第1の軸線の回りに回転させて磁気検知電
圧が最大になる位置を基準位置として求める。次いでこ
の基準位置におけるセンサの磁気感知面と直交する第2
の軸線の回りにセンサを回転させて磁気検知電圧が最大
になる位置を検知電圧最大位置として求め、基準位置に
おけるセンサの磁気感知面に沿う第1の平面と検知電圧
最大位置におけるセンサの磁気感知面に沿う第2の平面
との交線に沿う方向を磁界の方向とする。The rotation center axis of the sensor is determined in advance, and the sensor is first rotated around the first axis in the magnetic field to be measured, and the position where the magnetic detection voltage is maximum is determined as the reference position. Next, a second position perpendicular to the magnetic sensing surface of the sensor at this reference position
The position where the magnetic detection voltage is maximum is determined as the maximum detection voltage position by rotating the sensor around the axis of The direction along the line of intersection with the second plane along the surface is defined as the direction of the magnetic field.
上記金属は、超伝導体の特性を完全に損なわずに超伝導
体に接合できる金属であればよく、例えば金、銀、白金
及びこれらの合金からなる金属群の中から選択すること
ができる。The metal may be any metal that can be bonded to the superconductor without completely impairing the properties of the superconductor, and can be selected from the metal group consisting of gold, silver, platinum, and alloys thereof, for example.
上記超伝導体としては、臨界電流密度が大きく、マイス
ナー効果が十分大きいもの、例えばYBa2 Cu3O
酪、Bi2 Sr2 Ca2 Cu3Oy 。The above-mentioned superconductor has a large critical current density and a sufficiently large Meissner effect, such as YBa2Cu3O.
Buta, Bi2 Sr2 Ca2 Cu3Oy.
(Bil−×Pbx)2 Sr2 Ca2 Cu3O.
−1またはTJ22 Ba2 Ca2 Cu3O1等の
セラミックスまたは薄膜を用いることができる。(Bil-xPbx)2 Sr2 Ca2 Cu3O.
Ceramics or thin films such as -1 or TJ22 Ba2 Ca2 Cu3O1 can be used.
[作 用]
本発明者は、超伝導体と常伝導体の金属との接合部に磁
界を与えると、該接合部の抵抗が磁界に応じて変化する
ことを確認した。これは、超伝導体と常任導体金属との
接合部の界面の厚みが薄い領域(磁界侵入長程度の厚み
の領域)に磁力線が侵入すると、該接合部を通して流れ
ている電流が臨界電流以下であっても局部的に超伝導性
が失われ、接合部付近の超伝導体に抵抗が現れることに
よると思われる。[Function] The present inventor has confirmed that when a magnetic field is applied to the junction between a superconductor and a normal conductor metal, the resistance of the junction changes depending on the magnetic field. This is because when magnetic lines of force enter a thin region at the interface between a superconductor and a permanent conductive metal (a region as thick as the magnetic field penetration depth), the current flowing through the junction becomes less than the critical current. Even if there is, superconductivity is locally lost and resistance appears in the superconductor near the junction.
上記センサの磁気感知面に対して垂直に磁界が与えられ
ると、マイスナー効果により磁界は磁気感知面の周囲の
基体端部に集中する。このとき磁気感知面では磁力線が
反発され、共通電極と超伝導体との接合部は磁界の影響
を受けない。この状態での共通電極の接合部の抵抗は常
伝導体の金属の抵抗に基づいて生じる抵抗のみである。When a magnetic field is applied perpendicularly to the magnetic sensing surface of the sensor, the magnetic field is concentrated at the end of the base around the magnetic sensing surface due to the Meissner effect. At this time, the magnetic lines of force are repelled on the magnetic sensing surface, and the junction between the common electrode and the superconductor is not affected by the magnetic field. In this state, the resistance of the joint of the common electrode is only the resistance generated based on the resistance of the normal conductor metal.
磁界が印加された場合の共通電極の接合部の抵抗変化を
高感度で検出するためには、この接合部の抵抗をできる
だけ低くしておくことが好ましい。In order to detect with high sensitivity the change in resistance of the common electrode junction when a magnetic field is applied, it is preferable to keep the resistance of this junction as low as possible.
共通電極と電流電極とを通して定電流を流した状態で共
通電極と電圧電極との間の電圧を磁気検知電圧として検
出すると、該磁気検知電圧はセンサの磁気感知面が磁界
の方向と直交する方向にあるときに最小になり、該磁気
感知面が磁界の方向と平行になったときに最大になる。When the voltage between the common electrode and the voltage electrode is detected as a magnetic detection voltage while a constant current is flowing through the common electrode and the current electrode, the magnetic detection voltage is generated in the direction in which the magnetic sensing surface of the sensor is perpendicular to the direction of the magnetic field. It is at its minimum when the magnetic field is in the direction of the magnetic field, and it is at its maximum when the magnetic sensing surface is parallel to the direction of the magnetic field.
従ってセンサの姿勢を変化させて、磁気検知電圧の最大
値と最小値とを求め、該磁気検知電圧の最大値と最小値
との差をとることにより被測定磁界の強さを求めること
ができる。Therefore, the strength of the magnetic field to be measured can be determined by changing the orientation of the sensor, determining the maximum and minimum values of the magnetic detection voltage, and taking the difference between the maximum and minimum values of the magnetic detection voltage. .
また磁気検知電圧が最小になる位置を検知電圧最小位置
として求め、該検知電圧最小位置での磁気感知面に直角
な方向を被測定磁界の方向として検出することができる
。Further, the position where the magnetic detection voltage is minimum can be determined as the minimum detection voltage position, and the direction perpendicular to the magnetic sensing surface at the minimum detection voltage position can be detected as the direction of the magnetic field to be measured.
更にセンサの回転中心軸を予め定めておいて、被測定磁
界中でセンサを任意の第1の軸線の回りに回転させて磁
気検知電圧が最大になる位置を基準位置とすると、この
基準位置では磁気感知面が磁界の方向に沿った状態にな
っている。しかしこの状態では、磁力線が磁気感知面と
同一平面上にあることが分かるだけで、未だ磁界の方向
は分からない。次に基準位置におけるセンサの磁気感知
面と直交する第2の軸線の回りにセンサを回転させて、
磁気検知電圧が最小になる位置を求めると、この位置が
検知電圧最小位置となり、この位置における磁気感知面
と直交する方向が磁界の方向に一致する。Furthermore, if the center axis of rotation of the sensor is determined in advance and the position where the magnetic detection voltage is maximum when the sensor is rotated around an arbitrary first axis in the magnetic field to be measured is set as the reference position, then at this reference position, The magnetic sensing surface is aligned with the direction of the magnetic field. However, in this state, it is only known that the magnetic field lines are on the same plane as the magnetic sensing surface, but the direction of the magnetic field is not yet known. Next, rotate the sensor around a second axis perpendicular to the magnetic sensing surface of the sensor at the reference position,
When the position where the magnetic detection voltage is minimum is found, this position becomes the minimum detection voltage position, and the direction perpendicular to the magnetic sensing surface at this position coincides with the direction of the magnetic field.
また上記第2の軸線の回りにセンサを回転させて、磁気
検知電圧が最大になる位置を検知電圧最大位置として求
めると、磁力線はこの検知電圧最大位置における磁気感
知面と同一の平面上にもあることになる。従って上記基
準位置におけるセンサの磁気感知面に沿う平面を第1の
平面とし、検知電圧最大位置におけるセンサの磁気感知
面に沿う平面を第2の平面としてこれら第1及び第2の
平面の交線を求めると、該交線に沿う方向が磁界の方向
に一致する。Furthermore, if the sensor is rotated around the second axis and the position where the magnetic detection voltage is maximum is determined as the maximum detection voltage position, the lines of magnetic force will also be on the same plane as the magnetic sensing surface at this maximum detection voltage position. It turns out that there is. Therefore, the plane along the magnetic sensing surface of the sensor at the reference position is defined as the first plane, and the plane along the magnetic sensing surface of the sensor at the maximum detection voltage position is defined as the second plane, and the intersection line of these first and second planes When , the direction along the intersection line coincides with the direction of the magnetic field.
[実施例] 以下添附図面を参照して本発明の詳細な説明する。[Example] The present invention will be described in detail below with reference to the accompanying drawings.
第1図は本発明で用いるセンサの構成例を示したもので
、同図において1は酸化物超伝導体または金属系超伝導
体からなる基体、Qlは基体1に常伝導体の金属を接合
して形成した共通電極、q2及びq3はそれぞれ同じく
基体1に常伝導体の金属を接合することにより形成した
電流電極及び電圧電極である。この実施例では、基体1
が矩形板状に形成されていて、電極q1ないしq3は基
体1の1つの主面上に一直線上に並べた状態で設けられ
、電流電極q2と電圧電極q3とは所定の間隔を隔てて
配置されている。本明細書では共通電極q1が存在する
面を磁気感知面1aと呼ぶ。Figure 1 shows an example of the configuration of the sensor used in the present invention. In the figure, 1 is a base made of an oxide superconductor or a metallic superconductor, and Ql is a normal conductor metal bonded to the base 1. The common electrodes q2 and q3 thus formed are a current electrode and a voltage electrode, respectively, which are similarly formed by bonding a normal conductor metal to the base 1. In this example, the substrate 1
is formed into a rectangular plate shape, the electrodes q1 to q3 are arranged in a straight line on one main surface of the base 1, and the current electrode q2 and the voltage electrode q3 are arranged at a predetermined interval. has been done. In this specification, the surface on which the common electrode q1 exists is referred to as a magnetic sensing surface 1a.
上記超伝導体の基体1と金属からなる電極q1ないしq
3との接合は、超音波ボンディング法またはスポット溶
接法により行うことができる。The above-mentioned superconductor substrate 1 and metal electrodes q1 to q
3 can be bonded by ultrasonic bonding or spot welding.
超音波ボンディング法は、公知の超音波溶接装置または
同装置と同様の原理の装置を用いて、基体1と電極Ql
−Q3との接触部に超音波を与えることにより実施する
ことができる。基体1と電極q1ないしq3との接触部
に超音波を与えると、超伝導体からなる基体1の表面が
クリーニングされるとともに、超音波のパワーの加圧力
により、各電極が基体1に接合される。実験では、半導
体ICの電極にワイヤを接合するために使用されている
超音波ワイヤボンディング装置を用いて、酸化物超伝導
体からなる基体1と常伝導体の金属からなる電極q1〜
q3との間に良好な接合部を形成することができた。In the ultrasonic bonding method, the base 1 and the electrode Ql are bonded using a known ultrasonic welding device or a device based on the same principle.
- It can be carried out by applying ultrasonic waves to the contact part with Q3. When ultrasonic waves are applied to the contact areas between the base body 1 and the electrodes q1 to q3, the surface of the base body 1 made of a superconductor is cleaned, and each electrode is bonded to the base body 1 by the pressing force of the ultrasonic power. Ru. In the experiment, an ultrasonic wire bonding device used to bond wires to electrodes of semiconductor ICs was used to bond a substrate 1 made of an oxide superconductor and electrodes q1 to 1 made of a normal conductor metal.
It was possible to form a good joint with q3.
またスポット溶接法も、公知のスポット溶接装置を用い
て実施することができる。スポット溶接法による場合に
は、基体1に電極q1〜q3を接触させて各電極を基体
1に対して加圧し、各電極と基体とを通してパルス状の
電流を流す。これにより各電極と基体との接触部で発熱
させて各電極を基体1に接合することができる。Further, the spot welding method can also be carried out using a known spot welding device. In the case of spot welding, electrodes q1 to q3 are brought into contact with the base 1, each electrode is pressurized against the base 1, and a pulsed current is passed through each electrode and the base. Thereby, each electrode can be joined to the base 1 by generating heat at the contact portion between each electrode and the base.
本実施例の共通電極q1は所定の長さの銀線L1の中点
を基体1に接合することにより形成し、該銀線L1の両
端をそれぞれ定電流電源用端子a及び電圧検出手段用端
子すに接続した。The common electrode q1 of this embodiment is formed by joining the middle point of a silver wire L1 of a predetermined length to the base 1, and both ends of the silver wire L1 are connected to a constant current power supply terminal a and a voltage detection means terminal, respectively. connected to.
また他の電極q2及びq3はそれぞれ所定の長さの銀線
L2及びL3の一端を基体1に接合することにより形成
し、これらの銀線L2及びL3の他端をそれぞれ定電流
電源用端子a′及び電圧検出手段用端子す−に接続した
。Further, the other electrodes q2 and q3 are formed by joining one ends of silver wires L2 and L3 of a predetermined length to the base body 1, respectively, and the other ends of these silver wires L2 and L3 are connected to constant current power supply terminal a, respectively. ' and the terminal for voltage detection means -.
実施例では電極q1ないしq3を構成する金属として銀
線を用いたが、金、白金またはこれらの合金等の他の常
任導体金属を用いることもできる。In the embodiment, silver wire was used as the metal constituting the electrodes q1 to q3, but other permanent conductive metals such as gold, platinum, or alloys thereof may also be used.
電極q1ないしq3を構成する金属としては抵抗が小さ
い貴金属を用いるのが好ましいか、本発明で用いる常伝
導体の金属は超伝導体と接合した際に超伝導体の特性を
完全に損なわないものであればよく、貴金属以外の他の
金属を用いてもよい。Is it preferable to use a noble metal with low resistance as the metal constituting the electrodes q1 to q3, or is the normal conductor metal used in the present invention a metal that does not completely impair the characteristics of the superconductor when bonded to the superconductor? Any metal other than noble metals may be used.
本発明の磁界測定方法では、上記のようなセンサ2を用
い、このセンサの共通電極q1と電流電極q2との間に
定電流源3(共通電極と電流電極とを通して定電流を流
す手段)を、また共通電極q1と電圧電極q3との間に
電圧計4(電圧検出手段)をそれぞれ接続する。定電流
源3を通して共通電極qlと電流電極q2との間に流す
電流は、基体1を構成する超伝導体の臨界電流値よりも
所定値だけ小さく設定しておく。In the magnetic field measurement method of the present invention, the sensor 2 as described above is used, and a constant current source 3 (means for flowing a constant current through the common electrode and the current electrode) is provided between the common electrode q1 and the current electrode q2 of this sensor. , and a voltmeter 4 (voltage detection means) is connected between the common electrode q1 and the voltage electrode q3. The current flowing between the common electrode ql and the current electrode q2 through the constant current source 3 is set to be smaller than the critical current value of the superconductor forming the base 1 by a predetermined value.
第2図に示すように、センサ2の磁気感知面1aに垂直
な方向の磁界Hを与えると、マイスナー効果により磁力
線が基体1の磁気感知面1aから排除され、基体1の両
端側に磁力線が集中する。As shown in FIG. 2, when a magnetic field H in a direction perpendicular to the magnetic sensing surface 1a of the sensor 2 is applied, the lines of magnetic force are excluded from the magnetic sensing surface 1a of the base 1 due to the Meissner effect, and lines of magnetic force are created at both ends of the base 1. concentrate.
この状態では、共通電極q1及び電流電極q2が磁界の
影響を受けないため、共通電極q1及び電流電極q2を
通して電流を流しても基体1の超伝導性は失われない。In this state, since the common electrode q1 and the current electrode q2 are not affected by the magnetic field, the superconductivity of the base 1 is not lost even if a current is passed through the common electrode q1 and the current electrode q2.
このときの共通電極q1と電圧電極4との間の電圧は、
共通電極q1を構成する常伝導体の金属の抵抗による電
圧降下だけである。The voltage between the common electrode q1 and the voltage electrode 4 at this time is
There is only a voltage drop due to the resistance of the normal conductor metal that constitutes the common electrode q1.
次にセンサの基体1を回転させて第3図に示すように磁
気感知面1aに沿う方向を磁界Hの方向に一致させると
、磁力線が磁気感知面1aに接する状態になる。この状
態では磁界の強さに応じて電圧検出手段4により検出さ
れる電圧が変化する。Next, when the sensor base 1 is rotated so that the direction along the magnetic sensing surface 1a matches the direction of the magnetic field H as shown in FIG. 3, the lines of magnetic force come into contact with the magnetic sensing surface 1a. In this state, the voltage detected by the voltage detection means 4 changes depending on the strength of the magnetic field.
これは次の理由によるものと思われる。即ち、磁力線が
磁気感知面1aに接する状態になると、磁気感知面1a
の表面付近の極薄い層(磁場侵入長λ、程度)から磁力
線が侵入する。電極ql。This seems to be due to the following reasons. That is, when the lines of magnetic force come into contact with the magnetic sensing surface 1a, the magnetic sensing surface 1a
Magnetic field lines penetrate from an extremely thin layer (magnetic field penetration length λ, approximately) near the surface of the magnetic field. electrode ql.
q2の接合部付近には定電流源3から臨界電流に比較的
近い大きさの電流が流れているため、磁気感知面の表面
層に磁力線が侵入すると接合部付近の超伝導性が局部的
に失われ、超伝導性が失われた部分の抵抗値が増大する
。この状態では、共通電極q1の接合部の抵抗値が増大
した分だけ共通電極q1と電圧電極q3との間の電圧が
高(なり、電圧検出手段4により検出される電圧が高く
なる。Since a current relatively close to the critical current flows from the constant current source 3 near the junction of q2, when the magnetic field lines enter the surface layer of the magnetic sensing surface, the superconductivity near the junction locally increases. The resistance value of the part where superconductivity is lost increases. In this state, the voltage between the common electrode q1 and the voltage electrode q3 increases by the amount that the resistance value of the joint of the common electrode q1 increases, and the voltage detected by the voltage detection means 4 increases.
上記の説明では、センサの磁気感知面1aが磁界に垂直
な場合と、磁界と平行な場合との極端な場合について述
べたが、後記する実験から明らかなように、実際には磁
気感知面1aと磁界Hとの間の角度θにより電圧検出手
段4による検出電圧か変化する。従ってこの検出電圧を
磁気検知電圧Eとして検出することにより磁界を検出す
ることができる。In the above explanation, the extreme cases where the magnetic sensing surface 1a of the sensor is perpendicular to the magnetic field and the extreme case where it is parallel to the magnetic field are described, but as is clear from the experiment described later, in reality, the magnetic sensing surface 1a The voltage detected by the voltage detection means 4 changes depending on the angle θ between the magnetic field H and the magnetic field H. Therefore, by detecting this detection voltage as the magnetic detection voltage E, the magnetic field can be detected.
定電流源3から共通電極q1と電流電極q2とを通して
流す電流Iは、基体1を構成する超伝導体の臨界電流と
、周囲温度(臨界温度以下)とを勘案して適値に設定す
る。周囲温度及び(または)電流Iの大きさにより磁界
の検出感度を調整することができる。The current I flowing from the constant current source 3 through the common electrode q1 and the current electrode q2 is set to an appropriate value in consideration of the critical current of the superconductor constituting the base 1 and the ambient temperature (below the critical temperature). The detection sensitivity of the magnetic field can be adjusted depending on the ambient temperature and/or the magnitude of the current I.
実施例では、先ずYBa2Cu3O7−aの仮焼粉を3
[jon/cm2]の加圧力でプレス成形して厚さ1
.5 [mm] 、直径14 [mm]の円板状ペレ
ットを製作した。このペレットを酸素雰囲気の炉内に入
れて第4図に示した温度過程を経て焼成することにより
、臨界温度が93(l の酸化物超伝導体を製造した。In the example, first, 3 calcined powders of YBa2Cu3O7-a were
Press molded with a pressure of [jon/cm2] to a thickness of 1
.. A disc-shaped pellet with a diameter of 5 [mm] and a diameter of 14 [mm] was produced. This pellet was placed in a furnace in an oxygen atmosphere and fired through the temperature process shown in FIG. 4 to produce an oxide superconductor with a critical temperature of 93 (l 2 ).
この酸化物超伝導体のバルクを1.5×!、 5 ×1
2mmの短冊状にカットして基体1を形成し、この基体
1の表面に直径50μmの銀線を用いて、超音波ボンデ
ィング法により電極q1〜q3を形成した。The bulk of this oxide superconductor is 1.5x! , 5 ×1
A substrate 1 was formed by cutting into 2 mm strips, and electrodes q1 to q3 were formed on the surface of the substrate 1 by ultrasonic bonding using a silver wire with a diameter of 50 μm.
電極ql 〜Q:lの面積は3.ΩX 10−4[cm
21であった。電極形成後、500℃で1時間熱処理を
行った。The area of electrode ql ~Q:l is 3. ΩX 10-4 [cm
It was 21. After electrode formation, heat treatment was performed at 500° C. for 1 hour.
上記の方法により製作したセンサ2を液体窒素により冷
却し、センサ2を種々の温度Tに保って、共通電極q1
と電流電極q2とを通して流した定電流1 [mA]
と共通電極q1と電圧電極q3との間に得られる磁気検
知電圧E [mV] との関係を測定した。その結果を
第5図に示した。第5図においてパラメータT=11に
−100Kはセンサの温度を示している。センサの温度
が臨界温度(93K)よりも高い場合には、電流■と磁
気検知電圧Eとの関係が線形になり、該センサの温度が
臨界温度よりも低い場合には電流■と電圧Eとの関係が
非線形になる。磁界の測定を行うためには、センサ2の
温度を臨界温度以下として電流■対電圧Eの特性を非線
形とする必要がある。The sensor 2 manufactured by the above method is cooled with liquid nitrogen, the sensor 2 is maintained at various temperatures T, and the common electrode q1 is
Constant current 1 [mA] passed through and current electrode q2
The relationship between the magnetic detection voltage E [mV] obtained between the common electrode q1 and the voltage electrode q3 was measured. The results are shown in FIG. In FIG. 5, the parameter T=11 and -100K indicate the temperature of the sensor. When the temperature of the sensor is higher than the critical temperature (93K), the relationship between the current ■ and the magnetic detection voltage E is linear; when the temperature of the sensor is lower than the critical temperature, the relationship between the current ■ and the voltage E is linear. The relationship becomes nonlinear. In order to measure the magnetic field, it is necessary to keep the temperature of the sensor 2 below a critical temperature and to make the current vs. voltage E characteristic nonlinear.
次に電流■を一定(=100mA )として、磁界Hの
磁気感知面1aに対する入射角θをパラメータとして磁
気検知電圧E [mV3 と磁界H[Gaus+ ]と
の関係を求めたところ、第6図に示すような結果が得ら
れた。Next, with the current ■ constant (=100 mA) and the angle of incidence θ of the magnetic field H on the magnetic sensing surface 1a as a parameter, we calculated the relationship between the magnetic detection voltage E [mV3] and the magnetic field H [Gaus+], as shown in Figure 6. The results shown are obtained.
この結果から、入射角θが90度の場合には磁界Hを0
〜数Gaussの範囲で変化させても磁気検知電圧Eは
全く変化しない。入射角θを0度とすると比較的弱い磁
界を与えても磁気検知電圧Eが大きく変化する。入射角
θを45度とした場合には、磁気検知電圧が90度の場
合と0度の場合との中間の値をとる。From this result, when the incident angle θ is 90 degrees, the magnetic field H is reduced to 0.
The magnetic detection voltage E does not change at all even if it is changed in the range of ~ several Gauss. When the incident angle θ is 0 degrees, the magnetic detection voltage E changes greatly even if a relatively weak magnetic field is applied. When the incident angle θ is 45 degrees, the magnetic detection voltage takes an intermediate value between 90 degrees and 0 degrees.
本発明の測定方法は、センサ2の上記の特性を利用して
磁界の強さ(絶対値)と磁界の方向とを測定するもので
ある。The measuring method of the present invention utilizes the above characteristics of the sensor 2 to measure the strength (absolute value) of the magnetic field and the direction of the magnetic field.
磁界の強さを測定する場合には、センサ2の共通電極q
1と電流電極q2とに定電流源3を接続し、共通電極q
1と電圧電極q3との間に電圧検出手段4を接続する。When measuring the strength of the magnetic field, the common electrode q of sensor 2
1 and current electrode q2, a constant current source 3 is connected to the common electrode q
A voltage detection means 4 is connected between the voltage electrode q3 and the voltage electrode q3.
そしてセンサ2の温度は超伝導体の臨界温度以下に保つ
。そして被測定磁界H中でセンサ2の姿勢を変化させて
磁気検知電圧Eの最大値と最小値とを求め、磁気検知電
圧Eの最大値と最小値との差を求める。この差の値は入
射角θが90度の場合の被測定磁界の強さに相応してい
る。この差の値と磁界の強さとの関係を実験で求めてお
(ことにより、磁界の強さを検出することができる。The temperature of the sensor 2 is then maintained below the critical temperature of the superconductor. Then, the attitude of the sensor 2 is changed in the magnetic field H to be measured, the maximum value and the minimum value of the magnetic detection voltage E are determined, and the difference between the maximum value and the minimum value of the magnetic detection voltage E is determined. The value of this difference corresponds to the strength of the magnetic field to be measured when the incident angle θ is 90 degrees. The relationship between the value of this difference and the strength of the magnetic field is determined through experiments (thereby, the strength of the magnetic field can be detected).
また被測定磁界中でセンサ2の姿勢を変化させて磁気検
知電圧が最小になる位置を検知電圧最小位置として求め
れば、該検知電圧最小位置での磁気感知面に直角な方向
を被測定磁界Hの方向として検出することかできる。In addition, if the position of the sensor 2 is changed in the magnetic field to be measured and the position where the magnetic detection voltage is minimum is determined as the minimum detection voltage position, the direction perpendicular to the magnetic sensing surface at the minimum detection voltage position is the magnetic field to be measured H It can be detected as the direction of
上記磁気検知電圧の最小値と最大値とを求めるためには
、例えばセンサの姿勢を次の手順で変化させればよい。In order to obtain the minimum value and maximum value of the magnetic detection voltage, for example, the attitude of the sensor may be changed in the following procedure.
先ずセンサ2の回転中心軸を定める。例えば第7図に示
すように、共通電極q1と電圧電極q3との間の中点を
原点0とし、共通電極q1と電圧電極q3とを結ぶ直線
A−A−とセンサ2の磁気感知面1a上で直交し、かつ
原点Oを通る直線BB′をセンサ2の回転中心軸として
定める。First, the rotation center axis of the sensor 2 is determined. For example, as shown in FIG. 7, the origin 0 is the midpoint between the common electrode q1 and the voltage electrode q3, and the straight line A-A- connecting the common electrode q1 and the voltage electrode q3 is connected to the magnetic sensing surface 1a of the sensor 2. A straight line BB' that is perpendicular to the above and passes through the origin O is determined as the rotation center axis of the sensor 2.
先ずセンサ2の回転中心軸B−B ”を任意の方向に設
定した第1の軸線の方向に向けて磁界H中でセンサ2を
回転させる。この例では、第8図に示すようにx、
y、 xの直交座標系を用い、センサ2の原点Oを座
標の原点とし、図の紙面と直交するZ軸を第1の軸線と
する。この第1の軸線とセンサ2の回転中心軸B−B−
を一致させた状態で、センサ2を回転中心軸の回りに回
転させて磁気検知電圧Eが最大になる位置を基準位置と
して求める。第8図に実線で示したセンサ2は、この基
準位置にあり、この状態ではセンサ2の磁気感知面1a
が磁界Hの方向と平行している。しかしこの状態では、
未だ磁力線が磁気感知面1aと同一の平面上にあること
が分かるだけであり、磁界の方向は分からない。First, the sensor 2 is rotated in a magnetic field H with the rotation center axis B-B'' of the sensor 2 set in an arbitrary direction in the direction of a first axis.In this example, as shown in FIG.
Using an orthogonal coordinate system of y and x, the origin O of the sensor 2 is taken as the origin of the coordinates, and the Z axis perpendicular to the plane of the figure is taken as the first axis. This first axis and the rotation center axis B-B- of the sensor 2
With these values matched, the sensor 2 is rotated around the central axis of rotation, and the position where the magnetic detection voltage E is maximized is determined as the reference position. The sensor 2 shown by the solid line in FIG. 8 is in this reference position, and in this state the magnetic sensing surface 1a of the sensor 2 is
is parallel to the direction of the magnetic field H. However, in this state,
It is only known that the lines of magnetic force are on the same plane as the magnetic sensing surface 1a, but the direction of the magnetic field is not known.
そこで次に基準位置におけるセンサの磁気感知面と直交
する直線C−C−を第2の軸線として定め、センサの回
転中心軸B−B−をこの第2の軸線C−C−の方向に向
けてセンサを回転させる。Therefore, next, a straight line C-C- perpendicular to the magnetic sensing surface of the sensor at the reference position is determined as the second axis, and the rotation center axis B-B- of the sensor is directed in the direction of this second axis C-C-. to rotate the sensor.
このセンサの回転の過程で磁気検知電圧Eの最小値と最
大値とを求める。このようにセンサを第2の軸線C−C
−の回りに回転させた際に磁気検知電圧Eが最大になる
位置を検知電圧最大位置と呼び、磁気検知電圧Eが最小
になる位置を検知電圧最小位置と呼ぶ。During the rotation of this sensor, the minimum and maximum values of the magnetic detection voltage E are determined. In this way, move the sensor along the second axis C-C.
The position where the magnetic detection voltage E becomes maximum when rotated around - is called the detection voltage maximum position, and the position where the magnetic detection voltage E becomes the minimum is called the detection voltage minimum position.
検知電圧最大位置及び検知電圧最小位置における磁気検
知電圧の差から被測定磁界の強さを求めることができる
。また検知電圧最小位置における磁気感知面1aと直交
する方向が磁界Hの方向となる。The strength of the magnetic field to be measured can be determined from the difference between the magnetic detection voltages at the maximum detection voltage position and the minimum detection voltage position. Further, the direction perpendicular to the magnetic sensing surface 1a at the minimum detection voltage position is the direction of the magnetic field H.
更に、センサ2が第8図に実線で示した基準位置にある
ときの磁気感知面1aに沿う(磁力線と平行な面)第1
の平面と、センサの回転中心軸を第2の軸線C−C−の
方向に向けた状態で求めた検知電圧最大位置におけるセ
ンサの磁気感知面1aに沿う(同じく磁力線と平行な)
第2の平面との交線を求めれば、この交線に沿う方向が
磁界Hの方向となる。Furthermore, when the sensor 2 is at the reference position shown by the solid line in FIG.
along the magnetic sensing surface 1a of the sensor at the maximum detection voltage position (also parallel to the lines of magnetic force), which is determined with the rotation center axis of the sensor oriented in the direction of the second axis C-C-.
If the line of intersection with the second plane is determined, the direction along this line of intersection will be the direction of the magnetic field H.
本発明の方法に用いるセンサの基体を構成する超伝導材
料としては臨界電流密度が高く、マイスナー効果か十分
大きいものを用いるのが好ましい。As the superconducting material constituting the base of the sensor used in the method of the present invention, it is preferable to use a material that has a high critical current density and has a sufficiently large Meissner effect.
上記の実施例において、直流4端子法により求めた臨界
電流密度は約200 [A/cm2]であった。In the above example, the critical current density determined by the DC four-probe method was about 200 [A/cm2].
著しく臨界電流密度が低い超伝導体、例えば焼結状態が
悪くポーラスな(多孔性の)セラミックス超伝導体によ
り基体1を構成した場合には、印加磁界に対する指向性
が悪くなり、磁気感知面1aに対して垂直に磁界を加え
た場合でも磁気感知面と平行に磁界を加えた場合と同程
度の感度が得られる。これは、超伝導体の臨界電流が小
さいために流れ得る遮蔽電流(完全反磁性を保つための
超伝導電流)が小さくなり、比較的小さな磁界から磁束
の侵入が起こるためであると考えられる。If the base body 1 is made of a superconductor with a significantly low critical current density, for example a poorly sintered ceramic superconductor, the directivity of the applied magnetic field will be poor, and the magnetic sensing surface 1a Even when a magnetic field is applied perpendicular to the magnetic sensing surface, the same level of sensitivity can be obtained as when a magnetic field is applied parallel to the magnetic sensing surface. This is thought to be because the critical current of the superconductor is small, so the shielding current (superconducting current to maintain perfect diamagnetism) that can flow becomes small, and magnetic flux enters from a relatively small magnetic field.
即ちポーラスなセラミックス超伝導体を用いた場合には
、マイスナー効果が非常に弱いために、弱い磁界が与え
られた場合でも磁束が超伝導体内に侵入し、上記実施例
で得られたような異方性が得られないことによると思わ
れる。In other words, when a porous ceramic superconductor is used, the Meissner effect is very weak, so even when a weak magnetic field is applied, magnetic flux penetrates into the superconductor, causing the abnormality obtained in the above example. This seems to be due to the fact that the directionality cannot be obtained.
上記の実施例では、基体1を構成する酸化物超伝導体と
してYBa2 Cu3O7うを用いたが、他の酸化物超
伝導体、例えばBi2 Sr2 Ca2 Cu3 0y
、 (Bil−x Pbx) 2
Sr2 Ca2 Cu3O1、またはT i 2
B a 2 Ca 2 Cu gl Oy・等を用いる
こともできる。In the above example, YBa2 Cu3O7 was used as the oxide superconductor constituting the substrate 1, but other oxide superconductors, such as Bi2 Sr2 Ca2 Cu3 Oy
, (Bil-x Pbx) 2
Sr2 Ca2 Cu3O1, or T i 2
B a 2 Ca 2 Cu gl Oy, etc. can also be used.
上記の実施例では、電流電極q2と電圧電極q3とを離
して設けたが、第9図に示したように、所定長さの銀線
L23の中点を基体1に接合することにより共通電極q
1と同様な電極Q23を設けて、この電極Q23を電流
電極及び電圧電極として兼用するようにしてもよい。In the above embodiment, the current electrode q2 and the voltage electrode q3 are provided separately, but as shown in FIG. q
An electrode Q23 similar to 1 may be provided, and this electrode Q23 may be used both as a current electrode and a voltage electrode.
上記の実施例では、全ての電極を磁気感知面に設けたが
、電流電極q2と電圧電極q3とを別個に設ける場合に
は、磁界の影響を拾う共通電極q1のみを磁気感知面に
設け、他の電極を他の面に設けるようにしてもよい。In the above embodiment, all the electrodes were provided on the magnetic sensing surface, but when the current electrode q2 and the voltage electrode q3 are provided separately, only the common electrode q1 that picks up the influence of the magnetic field is provided on the magnetic sensing surface, Other electrodes may be provided on other surfaces.
第9図に示すように、共通電極q1と同様な電極q23
を設けて、この電極が電流電極と電圧電極とを兼ねるよ
うにする場合には、センサの姿勢を変化させた場合に磁
気検知電圧の極大値が複数束じないようにするため、電
極Q23を共通電極q34と同じ磁気感知面に設ける必
要がある。この場合には、電極q1とq23との双方が
磁気検知電圧に影響を与えるため、感度を高めることが
できる。As shown in FIG. 9, an electrode q23 similar to the common electrode q1
If the electrode Q23 is to serve as both a current electrode and a voltage electrode, the electrode Q23 should be It is necessary to provide it on the same magnetic sensing surface as the common electrode q34. In this case, since both electrodes q1 and q23 influence the magnetic detection voltage, sensitivity can be increased.
上記の実施例では、超伝導体として酸化物超伝導体を用
いたが、金属系の超伝導体を用いることもできる。In the above embodiments, an oxide superconductor was used as the superconductor, but a metallic superconductor may also be used.
また上記の実施例では、超伝導体のブロックによりセン
サの基体を構成したが、基板上に形成した薄膜状の超伝
導体をセンサの基体として用いることもできる。Furthermore, in the above embodiments, the base of the sensor is constructed from a block of superconductor, but a thin film of superconductor formed on a substrate can also be used as the base of the sensor.
上記の実施例では、センサを回転させる際に先ずz軸の
回りに回転させたが、センサを最初に回転させる際の回
転軸の方向は任意である。In the above embodiment, the sensor is first rotated around the z-axis, but the direction of the rotation axis when the sensor is first rotated is arbitrary.
本発明の測定方法は、弱い磁界の測定に適しており、地
磁気の計測、地磁気を測定して飛行物体(人工衛星や飛
行機等)の姿勢を検出する姿勢計、地磁気の計測等に応
用することができる。また工業分野においては、磁気を
利用した回転体の位置、角度の測定、変位の測定、鉄片
の探知、磁気探傷等に応用することもできる。The measurement method of the present invention is suitable for measuring weak magnetic fields, and can be applied to geomagnetism measurements, attitude meters that measure geomagnetism to detect the attitude of flying objects (artificial satellites, airplanes, etc.), geomagnetic measurements, etc. I can do it. In the industrial field, it can also be applied to measuring the position and angle of rotating bodies, measuring displacement, detecting iron pieces, magnetic flaw detection, etc. using magnetism.
[発明の効果]
以上のように、本発明によれば、超伝導体のマイスナー
効果を利用して方向性を持たせるとともに、磁界の侵入
による接合部の抵抗値の変化を利用して磁界の大きさに
応じた磁気検知電圧を得るようにした簡単な構成のセン
サを用いて、弱い磁界の方向と強さとを精度良く測定す
ることができる利点がある。[Effects of the Invention] As described above, according to the present invention, the Meissner effect of a superconductor is used to impart directionality, and the change in the resistance value of the junction due to the penetration of the magnetic field is used to reduce the magnetic field. There is an advantage that the direction and strength of a weak magnetic field can be measured with high accuracy using a sensor with a simple configuration that obtains a magnetic detection voltage depending on the magnitude.
第1図ないし第9図は本発明の実施例を示したもので、
第1図は本発明のセンサの構成を示す構成図、第2図及
び第3図は本発明で用いるセンサの動作を説明する説明
図、第4図はセンサの熱処理を行う際の温度変化を示す
線図、第5図及び第6図はそれぞれは本発明で用いるセ
ンサの通電電流と磁気検知電圧との関係及び磁気検知電
圧と磁界との関係を示す線図、第7図は本発明で用いる
センサの回転軸の定め方の一例を説明するための斜視図
、第8図は磁界中でセンサを回転させる手順を説明する
説明図、第9図は本発明で用いるセンサの変形例を示し
た構成図である。
1・・・基体、2・・・センサ、3・・・定電流源、4
・・・電圧検出手段、ql・・・共通電極、q2・・・
電流電極、q3・・・電圧電極。
第3図
第5図
磁気検知を圧(mV+1 to 9 show embodiments of the present invention,
Fig. 1 is a block diagram showing the configuration of the sensor of the present invention, Figs. 2 and 3 are explanatory diagrams explaining the operation of the sensor used in the present invention, and Fig. 4 shows the temperature change during heat treatment of the sensor. The diagrams shown in FIGS. 5 and 6 are diagrams showing the relationship between the current flowing through the sensor used in the present invention and the magnetic detection voltage, and the relationship between the magnetic detection voltage and the magnetic field, respectively, and FIG. FIG. 8 is a perspective view illustrating an example of how to determine the rotation axis of the sensor used, FIG. 8 is an explanatory diagram illustrating the procedure for rotating the sensor in a magnetic field, and FIG. 9 shows a modification of the sensor used in the present invention. FIG. 1...Base, 2...Sensor, 3...Constant current source, 4
... Voltage detection means, ql... Common electrode, q2...
Current electrode, q3...voltage electrode. Figure 3 Figure 5 Magnetic detection at pressure (mV+
Claims (7)
共通電極と電流電極と電圧電極とを接合し、少なくとも
前記共通電極を設けた面を平坦な磁気感知面としたセン
サを用い、 前記共通電極と電流電極とを通して定電流を流す手段と
、該定電流を流した状態で前記共通電極と電圧電極との
間に生じる電圧を磁気検知電圧として検出する電圧検出
手段とを設け、 前記センサの温度を前記超伝導体の臨界温度以下に保ち
、 被測定磁界中で前記センサの姿勢を変化させて前記磁気
検知電圧の最大値と最小値とを求め、前記磁気検知電圧
の最大値と最小値との差から前記被測定磁界の強さを求
めることを特徴とする磁界の測定方法。(1) Using a sensor in which a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface on which the common electrode is provided is a flat magnetic sensing surface, means for flowing a constant current through the common electrode and the current electrode; and voltage detection means for detecting a voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage; Maintaining the temperature of the sensor below the critical temperature of the superconductor, changing the attitude of the sensor in the magnetic field to be measured to determine the maximum and minimum values of the magnetic detection voltage, and determining the maximum and minimum values of the magnetic detection voltage. A method for measuring a magnetic field, characterized in that the strength of the magnetic field to be measured is determined from the difference from a minimum value.
共通電極と電流電極と電圧電極とを接合し、少なくとも
前記共通電極を設けた面を平坦な磁気感知面としたセン
サを用い、 前記共通電極と電流電極とを通して定電流を流す手段と
、該定電流を流した状態で前記共通電極と電圧電極との
間に生じる電圧を磁気検知電圧として検出する電圧検出
手段とを設け、 前記センサの温度を超伝導体の臨界温度以下に保ち、 前記センサの回転中心軸を定めておき、 被測定磁界中で前記センサを第1の軸線の回りに回転さ
せて前記磁気検知電圧が最大になる位置を基準位置とし
て求め、 次いで前記基準位置におけるセンサの磁気感知面と直交
する第2の軸線の回りに前記センサを回転させて前記磁
気検知電圧の最小値と最大値とを求め、 前記磁気検知電圧の最大値と最小値との差から前記被測
定磁界の強さを求めることを特徴とする磁界の測定方法
。(2) Using a sensor in which a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface on which the common electrode is provided is a flat magnetic sensing surface, means for flowing a constant current through the common electrode and the current electrode; and voltage detection means for detecting a voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage; Maintaining the temperature of the sensor below the critical temperature of the superconductor, determining the central axis of rotation of the sensor, and rotating the sensor around the first axis in the magnetic field to be measured until the magnetic detection voltage is maximized. Find a position as a reference position, then rotate the sensor around a second axis perpendicular to the magnetic sensing surface of the sensor at the reference position to find the minimum and maximum values of the magnetic detection voltage, A method for measuring a magnetic field, characterized in that the strength of the magnetic field to be measured is determined from the difference between a maximum value and a minimum value of the detected voltage.
共通電極と電流電極と電圧電極とを接合し、少なくとも
前記共通電極を設けた面を平坦な磁気感知面としたセン
サを用い、 前記共通電極と電流電極とを通して定電流を流す手段と
、該定電流を流した状態で前記共通電極と電圧電極との
間に生じる電圧を磁気検知電圧として検出する電圧検出
手段とを設け、 前記センサの温度を超伝導体の臨界温度以下に保ち、 被測定磁界中で前記センサの姿勢を変化させて前記磁気
検知電圧が最小になる位置を検知電圧最小位置として求
め、該検知電圧最小位置での前記磁気感知面に直角な方
向を被測定磁界の方向として検出することを特徴とする
磁界の測定方法。(3) Using a sensor in which a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface on which the common electrode is provided is a flat magnetic sensing surface, means for flowing a constant current through the common electrode and the current electrode; and voltage detection means for detecting a voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage; Keep the temperature of the sensor below the critical temperature of the superconductor, change the attitude of the sensor in the magnetic field to be measured, find the position where the magnetic detection voltage is minimum as the minimum detection voltage position, and calculate the position at the minimum detection voltage position. A method for measuring a magnetic field, comprising detecting a direction perpendicular to the magnetic sensing surface as the direction of the magnetic field to be measured.
共通電極と電流電極と電圧電極とを接合し、少なくとも
前記共通電極を設けた面を平坦な磁気感知面としたセン
サを用い、 前記共通電極と電流電極とを通して定電流を流す手段と
、該定電流を流した状態で前記共通電極と電圧電極との
間に生じる電圧を磁気検知電圧として検出する電圧検出
手段とを設け、 前記センサの温度を超伝導体の臨界温度以下に保ち、 前記センサの回転中心軸を定めておき、 被測定磁界中で前記センサを第1の軸線の回りに回転さ
せて前記磁気検知電圧が最大になる位置を基準位置とし
て求め、 次いで前記基準位置におけるセンサの磁気感知面と直交
する第2の軸線の回りに前記センサを回転させて前記磁
気検知電圧が最小になる位置を検知電圧最小位置として
求め、 前記検知電圧最小位置におけるセンサの磁気感知面と直
交する方向を前記磁界の方向として検出することを特徴
とする磁界の測定方法。(4) Using a sensor in which a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface on which the common electrode is provided is a flat magnetic sensing surface, means for flowing a constant current through the common electrode and the current electrode; and voltage detection means for detecting a voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage; Maintaining the temperature of the sensor below the critical temperature of the superconductor, determining the central axis of rotation of the sensor, and rotating the sensor around the first axis in the magnetic field to be measured until the magnetic detection voltage is maximized. Then, the sensor is rotated around a second axis perpendicular to the magnetic sensing surface of the sensor at the reference position, and the position where the magnetic detection voltage is minimum is determined as the minimum detection voltage position. A method for measuring a magnetic field, characterized in that a direction perpendicular to the magnetic sensing surface of the sensor at the minimum detection voltage position is detected as the direction of the magnetic field.
共通電極と電流電極と電圧電極とを接合し、少なくとも
前記共通電極を設けた面を平坦な磁気感知面としたセン
サを用い、 前記共通電極と電流電極とを通して定電流を流す手段と
、該定電流を流した状態で前記共通電極と電圧電極との
間に生じる電圧を磁気検知電圧として検出する電圧検出
手段とを設け、 前記センサの温度を超伝導体の臨界温度以下に保ち、 前記センサの回転中心軸を定めておき、 被測定磁界中で前記センサを第1の軸線の回りに回転さ
せて前記磁気検知電圧が最大になる位置を基準位置とし
て求め、 次いで前記基準位置におけるセンサの磁気感知面と交差
する第2の軸線の回りに前記センサを回転させて前記磁
気検知電圧が最大になる位置を検知電圧最大位置として
求め、 前記基準位置におけるセンサの磁気感知面に沿う第1の
平面と前記検知電圧最大位置におけるセンサの磁気感知
面に沿う第2の平面との交線に沿う方向を前記磁界の方
向として検出することを特徴とする磁界の測定方法。(5) Using a sensor in which a common electrode made of a normal conductor metal, a current electrode, and a voltage electrode are bonded to a base made of a superconductor, and at least the surface on which the common electrode is provided is a flat magnetic sensing surface, means for flowing a constant current through the common electrode and the current electrode; and voltage detection means for detecting a voltage generated between the common electrode and the voltage electrode while the constant current is flowing as a magnetic detection voltage; Maintaining the temperature of the sensor below the critical temperature of the superconductor, determining the central axis of rotation of the sensor, and rotating the sensor around the first axis in the magnetic field to be measured until the magnetic detection voltage is maximized. The sensor is then rotated around a second axis that intersects the magnetic sensing surface of the sensor at the reference position, and the position where the magnetic detection voltage is maximum is determined as the maximum detection voltage position. , detecting as the direction of the magnetic field a direction along a line of intersection between a first plane along the magnetic sensing surface of the sensor at the reference position and a second plane along the magnetic sensing surface of the sensor at the maximum detection voltage position; A magnetic field measurement method characterized by:
なる金属群の中から選択されている請求項1ないし5の
いずれか1つに記載の磁界の測定方法。(6) The method for measuring a magnetic field according to any one of claims 1 to 5, wherein the metal is selected from the metal group consisting of gold, silver, platinum, and alloys thereof.
_−_δ、Bi_2Sr_2Ca_2Cu_3O_y、
(Bi_1_−_xPb_x)_2Sr_2Ca_2C
u_3O_y_′、またはTl_2Ba_2Ca_2C
u_3O_y_′のセラミックスまたは薄膜からなって
いる請求項1ないし6のいずれか1つに記載の磁界の測
定方法。(7) The oxide superconductor is YBa_2Cu_3O_7
____δ, Bi_2Sr_2Ca_2Cu_3O_y,
(Bi_1_-_xPb_x)_2Sr_2Ca_2C
u_3O_y_′, or Tl_2Ba_2Ca_2C
7. The method for measuring a magnetic field according to claim 1, wherein the magnetic field measuring method is made of a ceramic or a thin film of u_3O_y_'.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2150401A JP2933681B2 (en) | 1990-06-08 | 1990-06-08 | Magnetic field measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2150401A JP2933681B2 (en) | 1990-06-08 | 1990-06-08 | Magnetic field measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0442077A true JPH0442077A (en) | 1992-02-12 |
| JP2933681B2 JP2933681B2 (en) | 1999-08-16 |
Family
ID=15496169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2150401A Expired - Lifetime JP2933681B2 (en) | 1990-06-08 | 1990-06-08 | Magnetic field measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2933681B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011102386A1 (en) | 2010-02-16 | 2011-08-25 | ホシザキ電機株式会社 | Electrolyzed water generation device |
| JP2015045617A (en) * | 2013-08-29 | 2015-03-12 | 株式会社フジクラ | Critical current evaluation device and evaluation method of superconductive wire rod for long size |
-
1990
- 1990-06-08 JP JP2150401A patent/JP2933681B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011102386A1 (en) | 2010-02-16 | 2011-08-25 | ホシザキ電機株式会社 | Electrolyzed water generation device |
| JP2015045617A (en) * | 2013-08-29 | 2015-03-12 | 株式会社フジクラ | Critical current evaluation device and evaluation method of superconductive wire rod for long size |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2933681B2 (en) | 1999-08-16 |
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