JPH0442641B2 - - Google Patents
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- Publication number
- JPH0442641B2 JPH0442641B2 JP56205940A JP20594081A JPH0442641B2 JP H0442641 B2 JPH0442641 B2 JP H0442641B2 JP 56205940 A JP56205940 A JP 56205940A JP 20594081 A JP20594081 A JP 20594081A JP H0442641 B2 JPH0442641 B2 JP H0442641B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent substrate
- lens
- semi
- gradient index
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0087—Simple or compound lenses with index gradient
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明は透明基板内に形成された好ましくは多
数の屈折率分布型レンズ部分を具備するレンズに
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a lens comprising preferably multiple gradient index lens portions formed within a transparent substrate.
立体写真の撮影や複写機用レンズあるいは光メ
モリ用レンズとしてレンズ集合体が使用されてお
り、最近では、マトリツクス状あるいはアレイ状
に配置された微小光源が発するビームを集束する
手段としてもレンズ集合体が使用されている。 Lens assemblies are used to take stereoscopic photographs, as lenses for copying machines, and as lenses for optical memory. Recently, lens assemblies have also been used as a means to focus beams emitted by minute light sources arranged in a matrix or array. It is used.
このようなレンズ集合体の一例として、中心軸
に対して垂直な断面に於いてその中心軸からの距
離の2乗に比例して減少する屈折率分布を有する
集束性光伝送体を単位レンズ系として束ねる構造
のものがある(特公昭47−12820号「集束性光伝
送体を含む複眼レンズ」)。 As an example of such a lens assembly, a unit lens system is a converging optical transmitter having a refractive index distribution that decreases in proportion to the square of the distance from the central axis in a cross section perpendicular to the central axis. There is a structure in which the lenses are bundled together (Special Publication No. 47-12820 ``Compound Lens Containing a Focusing Light Transmitter'').
しかしながら、この構造のものは、個々のレン
ズ素子の形成に球面加工の工程を要しないという
点ではすぐれているが、必要な精度で以つて多数
のレンズをその軸心をそろえて束ねかつこの束ね
た状態を保持するのに、多数の工程を必要とする
ことなどの問題点がある。 However, although this structure is superior in that it does not require a spherical processing process to form individual lens elements, it is also possible to bundle a large number of lenses with the necessary precision so that their axes are aligned, and to form this bundle. There are problems such as the need for a large number of steps to maintain the same state.
又、半導体レーザアレイ等を光源に用いるとき
には、半導体から放射されるビームの放射角が劈
開面に垂直な方向と平行な方向とでは異なり、普
通は楕円状の放射角を有する。このようなビーム
を集束する光学レンズ系としては、点対称な屈折
率分布を有するものが必ずしも最適とは言えな
い。 Furthermore, when a semiconductor laser array or the like is used as a light source, the radiation angle of the beam emitted from the semiconductor is different in a direction perpendicular to the cleavage plane and in a direction parallel to the cleavage plane, and usually has an elliptical radiation angle. As an optical lens system for converging such a beam, one having a point-symmetric refractive index distribution is not necessarily optimal.
本発明は上述の如き問題点を解決するために発
明されたものであつて、IC製作工程などで用い
られるフオトリソグラフイーの技術を用いること
ができ、このため多数の屈折率分布型レンズ部分
を備えたレンズ体を必要とする場合でも、既述の
特公昭47−12820号公報に開示れている従来技術
のように個々のレンズを束ねる工程を必要とせ
ず、更にビームの中心軸に垂直な面において楕円
状の放射角を有する光源系にも使用可能な屈折率
分布型レンズ体を提供するものである。 The present invention was invented to solve the above-mentioned problems, and it is possible to use the photolithography technology used in the IC manufacturing process. Even if a lens body with a 3-dimensional structure is required, there is no need for the process of bundling individual lenses as in the prior art disclosed in the aforementioned Japanese Patent Publication No. 47-12820. The object of the present invention is to provide a gradient index lens body that can also be used in a light source system having an elliptical radiation angle on its surface.
以下本発明の実施例を図面に付き説明する。 Embodiments of the present invention will be described below with reference to the drawings.
まず本発明による屈折率分布型レンズ体及びそ
の製造方法の原理を第1図及び第2図に付き説明
すると、第1図に於いて、ガラスあるいは合成樹
脂等の誘電体からなる透明基板1上には、拡散源
の透過を阻止するマスク層2が形成されており、
マスク層2にはスリツト状の開口部3が透明基板
1の全巾に亘つて延びるように形成されている。
このスリツト状開口部3を通して、拡散源を透明
基板1中に拡散させると、第2A図に示すよう
に、所定の屈折率分布を有する埋め込み型の長細
い半円柱状レンズ部分4を透明基板1中に具備し
たレンズ体5が作成される。第2B図は、上記レ
ンズ部分4の中心線6を含むzy面での屈折率分
布を示している。第2B図から明らかなように、
この屈折率分布は透明基板表面1aから基板の厚
み方向に向かつて連続的に減少又は増加し、透明
基板表面1aからhの深さのところで元も透明基
板1と同一の屈折率となる。このhは上記半円柱
形状の半径と一致し、上述の屈折率分布は、レン
ズ4の中心線6を含む総ての面についても成り立
つている。なおy軸方向には屈折率は変化するこ
とはない。 First, the principle of the gradient index lens body and the manufacturing method thereof according to the present invention will be explained with reference to FIGS. 1 and 2. In FIG. 1, a transparent substrate 1 made of a dielectric material such as glass or synthetic resin is A mask layer 2 is formed to block the transmission of the diffusion source.
A slit-shaped opening 3 is formed in the mask layer 2 so as to extend over the entire width of the transparent substrate 1.
When the diffusion source is diffused into the transparent substrate 1 through this slit-like opening 3, as shown in FIG. The lens body 5 contained therein is created. FIG. 2B shows the refractive index distribution in the zy plane including the center line 6 of the lens portion 4. As is clear from Figure 2B,
This refractive index distribution decreases or increases continuously from the transparent substrate surface 1a toward the thickness direction of the substrate, and becomes the same refractive index as the original transparent substrate 1 at a depth h from the transparent substrate surface 1a. This h coincides with the radius of the semi-cylindrical shape, and the refractive index distribution described above also holds true for all surfaces including the center line 6 of the lens 4. Note that the refractive index does not change in the y-axis direction.
透明基板1中に拡散源を拡散させて所定の屈折
率分布を得るための方法としては次の2通りが考
えられる。その一つの方法は、ガラス修飾酸化物
を構成する第1のイオンを含むガラス板にて構成
された透明基板1中に、このガラス板の屈折率の
変化(即ち、増加又は減少)に寄与する度合が上
記第1のイオンの場合よりも大きいガラス修飾酸
化物を構成し得る第2のイオンを交換拡散させる
ことにより、この第2のイオンを上記第1のイオ
ンと置換させるか、或は電界をかけながらイオン
拡散させる方法である。もう一つの方法は、透明
な重合体からなる合成樹脂にて構成された透明基
板1中に、こん重合体と共重合することによりそ
の屈折率を変化(即ち、増加又は減少)させるモ
ノマーを拡散移動させ、次いで上述の共重合を行
わせる方法である。 The following two methods can be considered for diffusing a diffusion source into the transparent substrate 1 to obtain a predetermined refractive index distribution. One method is to provide a transparent substrate 1 made of a glass plate containing first ions constituting a glass modification oxide, which contributes to a change (i.e., increase or decrease) in the refractive index of this glass plate. This second ion may be replaced with the first ion by exchange diffusion of a second ion which may constitute the glass-modified oxide to a greater degree than the first ion, or the second ion may be replaced by the first ion. This is a method of diffusing ions while applying heat. Another method is to diffuse a monomer that changes (increases or decreases) the refractive index by copolymerizing with the polymer into a transparent substrate 1 made of a synthetic resin made of a transparent polymer. This is a method in which the above-mentioned copolymerization is carried out.
以上の2つの方法は拡散源を透明基板中に拡散
させる方法であるが、透明基板1中に所定の屈折
率分布を得るための別のもう一つの方法は、CO2
レーザなどを用いることにより、円柱体をその中
心線を含む平面で二分割した半円柱形状を有する
凹部をガラス板などから構成された透明基板の表
面に形成し、石英系の光フアイバ等の場合に利用
されている非等温プラズマCVD法により、屈折
率を連続的に変化(即ち、増加又は減少)させる
ようにドーパントの量を変化させながらガラス質
層を前記透明基板に沈着させて前記凹部を埋める
ようにこの透明基板を被覆し、その後この被覆さ
れた透明基板が元の厚さ又はそれより小さい厚さ
まで減少するようにこの透明基板を上記被覆層側
からカツトする方法である。 The above two methods are methods of diffusing the diffusion source into the transparent substrate, but another method for obtaining a predetermined refractive index distribution in the transparent substrate 1 is to diffuse the diffusion source into the transparent substrate 1 .
By using a laser or the like, a concave part having a semi-cylindrical shape, which is a cylinder divided into two by a plane including its center line, is formed on the surface of a transparent substrate made of a glass plate, etc. In the case of a quartz-based optical fiber, etc. A non-isothermal plasma CVD method, which is used in In this method, the transparent substrate is coated so as to be buried, and then the coated transparent substrate is cut from the coating layer side so that the coated transparent substrate is reduced to the original thickness or a thickness smaller than the original thickness.
本発明によるレンズ体においては、多数の屈折
率分布型レンズ部分をアレイ状に配置するのが好
適であり、第3図はその例を示している。第3図
に於いて、個々の半円柱状レンズ部分4は、第2
A図に示す半円柱状レンズ部分と実質的に同一の
構成であり、これらの半円柱状レンズ部分4が互
いに平行になるように共通の透明基板1内に形成
されている。第3図に示す上述のようなレンズ集
合体5の場合には、半円柱状レンズ部分4の間隔
を任意に設定可能であり、かつ高精度に選定可能
である。 In the lens body according to the present invention, it is preferable to arrange a large number of gradient index lens parts in an array, an example of which is shown in FIG. In FIG. 3, each semi-cylindrical lens portion 4 has a second
It has substantially the same configuration as the semi-cylindrical lens portion shown in FIG. A, and these semi-cylindrical lens portions 4 are formed in a common transparent substrate 1 so as to be parallel to each other. In the case of the above-described lens assembly 5 shown in FIG. 3, the interval between the semi-cylindrical lens portions 4 can be set arbitrarily and can be selected with high precision.
第4図に示すように、第3図に示したレンズ集
合体の一対を互いに光軸を直交させて重ね合わせ
ると、一対のレンズ集合体5,5′の半円柱状レ
ンズ部分4,4′の交点にそれぞれ通常の凸レン
ズが存在しているのと実質的に同様な機能を有す
ることになるので、例えば平行光を多数の微小ス
ポツトに絞ることが可能となる。又、上記交点に
対応したマトリツクス状の微小光源を配置した場
合にも、上述の場合と同様に、マトリツクス状の
微小スポツトを得ることができる。更に、第4図
に示す半円柱状レンズ部分4,4′の開口数NA
を別々の値に設定しておけば、前述した半導体レ
ーザのように楕円状の放射角を有する光源からの
光線をほぼ円形の平行光に集束可能であるなど、
既述の特公昭47−12820号の場合のように単位レ
ンズ系を束ねる構造のものに較べて、優れた特徴
を有している。 As shown in FIG. 4, when the pair of lens assemblies shown in FIG. This has substantially the same function as if a normal convex lens were present at each intersection of the two, so that it is possible, for example, to focus parallel light into a large number of minute spots. Also, when a matrix of minute light sources corresponding to the above-mentioned intersections is arranged, it is possible to obtain a matrix of minute spots in the same way as in the case described above. Furthermore, the numerical aperture NA of the semi-cylindrical lens portions 4 and 4' shown in FIG.
By setting them to different values, it is possible to focus the light rays from a light source with an elliptical radiation angle, such as the semiconductor laser mentioned above, into approximately circular parallel light, etc.
It has superior features compared to a structure in which unit lens systems are bundled as in the case of the previously mentioned Japanese Patent Publication No. 47-12820.
第4図に示した例は、2枚の透明基板1,1′
に別別に半円柱状レンズ部分4,4′を作成して
重ね合わせた場合であるが、第5図に示すよう
に、一枚の透明基板1の上面及び下面に半円柱状
レンズ部分4,4′をそれぞれ形成し、これらの
レンズ部分4,4′が互いに直交するように構成
することも可能である。 The example shown in FIG. 4 consists of two transparent substrates 1 and 1'.
In this case, the semi-cylindrical lens parts 4, 4' are separately made and overlapped, but as shown in FIG. It is also possible to form lens portions 4', respectively, and to configure these lens portions 4, 4' to be orthogonal to each other.
次に本発明による屈折率分布型レンズ体及びそ
の製造方法の具体例を説明する。 Next, a specific example of a gradient index lens body and a method for manufacturing the same according to the present invention will be described.
具体例 1
BK7と通称されている光学ガラス(SiO268.9重
量%、B2O310.1重量%、Na2O 8.8重量%、K2
O8.4重量%、BaO2.8重量%)から成りかつ50mm
×50mm×5mmの大きさを有する両面を研磨したガ
ラス平板を透明基板として準備した。Specific example 1 Optical glass commonly known as BK7 (SiO 2 68.9% by weight, B 2 O 3 10.1% by weight, Na 2 O 8.8% by weight, K 2
50mm
A glass flat plate having a size of 50 mm x 5 mm and polished on both sides was prepared as a transparent substrate.
次に第6図に示すように、このガラス基板1の
片面全面に厚さ1μmのTi膜をスパツタリングで
形成した後、フオトリソグラフイーの技術を用い
て、巾100μm長さ45mmのスリツト状の開口部3を
ピツチ1.5mm間隔で形成した。その後、Tl2SO430
モル%、ZnSO440%モル%。K2SO430モル%の混
塩を600℃に加熱溶解して溶融塩中に上記透明基
板を浸漬し、上記開口部を通して上記溶融塩中の
イオンとガラス中のイオンとを交換させる処理を
40時間行つた。次いでこの透明基板を溶融塩中か
ら取り出して徐冷しながら常温迄戻し、次いでそ
の表面を研磨してマスク2を除去することによつ
て、第3図に示すような屈折率分布型レンズ集合
体を得た。第6図に於いて、w1は開口部の巾を
示すが、これは上記の通り100μmである。w2及
びhはTlイオンの浸入により形成された半円柱
状レンズの巾及び深さを示し、w2は約500μm、
hは約450μmという結果を得た。 Next, as shown in FIG. 6, a Ti film with a thickness of 1 μm is formed on the entire surface of one side of the glass substrate 1 by sputtering, and then a slit-shaped opening with a width of 100 μm and a length of 45 mm is formed using photolithography technology. Section 3 was formed with a pitch of 1.5 mm. Then Tl 2 SO 4 30
Mol%, ZnSO4 40% Mol%. A treatment is carried out in which a mixed salt containing 30 mol% of K 2 SO 4 is heated and dissolved at 600°C, the transparent substrate is immersed in the molten salt, and ions in the molten salt and ions in the glass are exchanged through the opening.
I went there for 40 hours. Next, this transparent substrate is taken out from the molten salt, slowly cooled to room temperature, and then its surface is polished to remove the mask 2, thereby producing a gradient index lens assembly as shown in FIG. I got it. In FIG. 6, w1 indicates the width of the opening, which is 100 μm as described above. w2 and h indicate the width and depth of the semi-cylindrical lens formed by the infiltration of Tl ions, w2 is approximately 500 μm,
The result was that h was approximately 450 μm.
上記のようにして製作したレンズ集合体に、そ
の前面からヘリウム・ネオンレーザ光をビームエ
キスパンダーで30mmφの平行光線として入射させ
た処、焦点(焦点距離約10mm)に於いて上記入射
光を間隔1.5mm、巾10μmのスリツト状に集束させ
ることができた。 When a helium-neon laser beam was made incident from the front surface of the lens assembly manufactured as described above as a parallel beam of 30 mmφ using a beam expander, the incident beam was separated at an interval of 1.5 mm at the focal point (focal length approximately 10 mm). It was possible to focus the light into a slit shape with a width of 10 μm and a width of 10 μm.
具体例 2
SiO264重量%、B2O39重量%、Na2011.4重量
%、K2O4.2重量%、Al2O34.2重量%、MgO7.1重
量%から成りかつ50mm×50mm×5mmの大きさを有
するガラス平板を透明基板として準備した。Specific example 2 Consisting of 64% by weight of SiO 2 , 9% by weight of B 2 O 3 , 11.4% by weight of Na 2 , 4.2% by weight of K 2 O , 4.2% by weight of Al 2 O 3 , and 7.1% by weight of MgO and 50 mm × 50 mm A glass flat plate having a size of 5 mm was prepared as a transparent substrate.
既述の具体例1と同様なマスキング処理を施
し、550℃に加熱した同じ溶融塩を用い、Ti膜側
を陽極、Ti膜と反対の面を陰極にして直流電界
をかけながら6時間のイオン拡散処理を行い、徐
冷処理を施した後、Ti膜を除去した。 The same molten salt heated to 550°C was subjected to the same masking treatment as in Example 1 described above, and ions were heated for 6 hours while applying a DC electric field, with the Ti film side as the anode and the opposite side as the cathode. After performing diffusion treatment and slow cooling treatment, the Ti film was removed.
このようにして製作した半円柱状レンズ集合体
の基板2枚を光軸を直交させて第4図のように重
ね合わせた。その前面かヘリウム・ネオンレーザ
光をビームエキスパンダーで30mmφの平行光線と
して入射させた処、焦点位置に於いて上記入射光
を間隔1.5mm、直径10μmのスポツト状に集束させ
ることができた。 The two substrates of the semi-cylindrical lens assembly produced in this manner were stacked on top of each other with their optical axes perpendicular to each other as shown in FIG. When a helium-neon laser beam was incident on the front surface as a parallel beam of 30 mm diameter using a beam expander, the incident beam could be focused into a spot with an interval of 1.5 mm and a diameter of 10 μm at the focal position.
具体例 3
過酸化ベンゾイルを3%加えたアリルジグライ
トコールカーボネート(通称:CR−39)を80℃
にて35分間加熱して半重合させることにより、50
mm×50mm×3mmの大きさの透明基板を得た。上記
CR−30の屈折率は1.504であつた。Specific example 3 Allyl diglyte coal carbonate (commonly known as CR-39) to which 3% benzoyl peroxide was added was heated at 80°C.
By heating for 35 minutes at
A transparent substrate with dimensions of mm x 50 mm x 3 mm was obtained. the above
The refractive index of CR-30 was 1.504.
上記透明基板の表面に、厚さ1mm、巾1mm、長
さ50mmのポリエチレンのマスクを3mmの間隔で平
行に付着した後、屈折率1.5775で80℃の安息香酸
ビニル(VB)のモノマー中に上記透明基板を浸
漬して、上記マスク以外の表面から上記モノマー
をこの透明基板内に60分間拡散移動させて共重合
させた。次いでこの透明基板を80℃で数時間熱処
理してからその表面を研磨することによつて、第
3図に示すようなレンズ集合体を得た。 Polyethylene masks with a thickness of 1 mm, a width of 1 mm, and a length of 50 mm were attached in parallel to the surface of the transparent substrate at intervals of 3 mm, and then the masks were placed in vinyl benzoate (VB) monomer with a refractive index of 1.5775 and a temperature of 80°C. A transparent substrate was immersed, and the monomer was diffused into the transparent substrate from the surface other than the mask for 60 minutes to cause copolymerization. Next, this transparent substrate was heat-treated at 80° C. for several hours and its surface was polished to obtain a lens assembly as shown in FIG.
なお上述の具体例1〜3において、交換拡散又
は拡散移動の処理に先立つて、透明基板の側縁全
体及び裏面全体に、必要に応じて上述のマスクと
同様のマスクが形成されてよい。 In addition, in the above-mentioned specific examples 1 to 3, a mask similar to the above-mentioned mask may be formed on the entire side edge and the entire back surface of the transparent substrate, if necessary, prior to the exchange diffusion or diffusion movement process.
具体例 4
30mm×30mm×1mmの石英ガラス基板を準備し、
CO2レーザを用いて、上記ガラス基板表面に断面
形状が半円(半径50μm)で長さ30mmの凹部を
150μm間隔に平行に形成した。Specific example 4 Prepare a 30mm x 30mm x 1mm quartz glass substrate,
Using a CO 2 laser, a recess with a semicircular cross-section (50 μm radius) and a length of 30 mm is created on the surface of the glass substrate.
They were formed in parallel at 150 μm intervals.
次いで上記基板を電気炉内に設置された反応管
中に置いた。前記電気炉は、その内部でマイクロ
波共振子が反応管に沿つて往復運動できる構造を
有するものであつた。前記反応管中にSiH4を
10sccm(スタンダード・キユービツク・センチメ
ートル・パーミニツト)の割合で流し、NH3を
0から30sccmまで漸時増加させ、又NO2を
50sccmから0に漸次減少させて、前記基板上に
ガラス質層を凹部が埋まるように沈着させた。な
お、この期間中、前記基板を約300℃に保ち、マ
イクロ波共振子に2.45GHZの周波数を送り、反応
管中でプラズマを発生させた。このようにして前
記石英基板上にSi3N4とSiO2のガラス質層を形成
させたものを反応容器から取り出し、元の石英元
板の厚さまで沈着ガラス質層を研磨することによ
り、第3図に示すようなレンズ集合体を得た。 Next, the above substrate was placed in a reaction tube installed in an electric furnace. The electric furnace had a structure in which a microwave resonator could reciprocate along the reaction tube. Add SiH4 into the reaction tube
NH 3 was gradually increased from 0 to 30 sccm, and NO 2 was introduced at a rate of 10 sccm (standard cubic centimeter per minute).
A glassy layer was gradually decreased from 50 sccm to 0 sccm to deposit a glassy layer on the substrate so as to fill the recesses. During this period, the substrate was kept at about 300° C., and a frequency of 2.45 GHZ was sent to the microwave resonator to generate plasma in the reaction tube. The vitreous layer of Si 3 N 4 and SiO 2 formed on the quartz substrate is removed from the reaction vessel, and the deposited vitreous layer is polished to the thickness of the original quartz substrate. A lens assembly as shown in Figure 3 was obtained.
以上本発明を実施例及び具体例に付き説明した
が、本発明はこれらの実施例及び具体例に限定さ
れるものではなく、本発明の技術的思想に基いて
各種の変更が可能である。 Although the present invention has been described above with reference to embodiments and specific examples, the present invention is not limited to these embodiments and specific examples, and various changes can be made based on the technical idea of the present invention.
例えば、マスク2上に形成されるスリツト状の
開口部3は、第1図に示すように、透明基板1の
一方の縁端から他方の縁端までその全巾に亘つて
続いている形状の外に、第7図に示すようにその
全周をマスク層2で囲まれた窓のような形状を有
していてもよい。この場合でも、窓状の開口部3
に対応して、屈折率分布型レンズ集合体が作成さ
れる。 For example, the slit-shaped opening 3 formed on the mask 2 has a shape that continues over the entire width from one edge of the transparent substrate 1 to the other edge, as shown in FIG. Alternatively, as shown in FIG. 7, it may have a window-like shape surrounded by a mask layer 2 on its entire circumference. Even in this case, the window-like opening 3
A gradient index lens assembly is created correspondingly.
本発明は上述のような構成であるから、比較的
簡単な製造工程によつて大量生産し得るにもかゝ
わらず、用途に応じてスリツト状に光を集束させ
たり、マトリツクス状に光を集束させたり、或は
その逆にしたりすることが可能であり、またビー
ムの中心軸に垂直な面において楕円状の放射角を
有する光源系に使用するのにも好適である。 Since the present invention has the above-described configuration, it can be mass-produced through a relatively simple manufacturing process, and it can also be used to focus light in a slit shape or in a matrix shape depending on the application. It can be focused and vice versa and is also suitable for use in light source systems with an elliptical emission angle in a plane perpendicular to the central axis of the beam.
第1図は本発明による屈折率分布型レンズ体の
製造方法を説明するための製造途中のレンズ体の
斜視図、第2A図は第1図に示す方法によつて製
造されたレンズ体の斜視図、第2B図は第2A図
に示すレンズ体の屈折率分布を示すグラフ、第3
図は本発明による屈折率分布型レンズ体の別の例
を示す斜視図、第4図は第3図に示す屈折率分布
型レンズ体を2枚組み合せた使用例を示すレンズ
体の斜視図、第5図は屈折率分布型レンズ体の更
に別の例を示す斜視図、第6図は第3図に示す屈
折率分布型レンズ体の製造工程を示す製造途中の
レンズ体の断面図、第7図は本発明によるレンズ
体の製造方法に於けるマスキングの他の例を示す
レンズ体の斜視図である。
なお図面に用いられている符号に於いて、1,
1′……透明基板、2……マスク層、3……開口
部、4,4′……半円柱状レンズ部分、5,5′…
…レンズ体、である。
FIG. 1 is a perspective view of a lens body in the middle of manufacture for explaining the method of manufacturing a gradient index lens body according to the present invention, and FIG. 2A is a perspective view of a lens body manufactured by the method shown in FIG. 1. Figure 2B is a graph showing the refractive index distribution of the lens body shown in Figure 2A.
The figure is a perspective view showing another example of the gradient index lens body according to the present invention, and FIG. 4 is a perspective view of a lens body showing an example of use in which two gradient index lens bodies shown in FIG. 3 are combined. FIG. 5 is a perspective view showing yet another example of the gradient index lens body, FIG. 6 is a sectional view of the lens body in the middle of manufacturing, showing the manufacturing process of the gradient index lens body shown in FIG. FIG. 7 is a perspective view of a lens body showing another example of masking in the method for manufacturing a lens body according to the present invention. In addition, in the symbols used in the drawings, 1,
1'... Transparent substrate, 2... Mask layer, 3... Opening, 4, 4'... Semi-cylindrical lens portion, 5, 5'...
...a lens body.
Claims (1)
るほぼ半円柱形状の屈折率分布型レンズ部分を上
記透明基板内に具備し、上記半円柱形状部分の長
方形状平坦面が上記透明基板の表面に臨むように
構成され、上記屈折率分布型レンズ部分が上記半
円柱形状部分をその一半とする仮想円柱体の軸心
からこの軸心とは直交する方向に遠ざかるにつれ
て次第に変化しかつ上記軸心に平行な方向におい
ては実質的に変化しない屈折率分布を備えている
ことを特徴とする屈折率分布型レンズ体。1 A substantially semi-cylindrical gradient index lens portion extending substantially orthogonally to the thickness direction of the transparent substrate is provided in the transparent substrate, and a rectangular flat surface of the semi-cylindrical portion is located on the surface of the transparent substrate. The gradient index lens portion gradually changes as it moves away from the axis of a virtual cylinder of which the semi-cylindrical portion is one half in a direction orthogonal to this axis, and A gradient index lens body characterized by having a refractive index distribution that does not substantially change in a direction parallel to .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20594081A JPS58106503A (en) | 1981-12-18 | 1981-12-18 | Refractive index distribution type lens barrel and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20594081A JPS58106503A (en) | 1981-12-18 | 1981-12-18 | Refractive index distribution type lens barrel and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58106503A JPS58106503A (en) | 1983-06-24 |
| JPH0442641B2 true JPH0442641B2 (en) | 1992-07-14 |
Family
ID=16515233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20594081A Granted JPS58106503A (en) | 1981-12-18 | 1981-12-18 | Refractive index distribution type lens barrel and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58106503A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6126535A (en) * | 1984-07-16 | 1986-02-05 | Hoya Corp | Preparation of flat plate microlens having distributed refractive index |
| JPS61132541A (en) * | 1984-11-29 | 1986-06-20 | Hoya Corp | Conditioning of lens having refractive index distribution |
| JPS61222943A (en) * | 1985-03-29 | 1986-10-03 | Hoya Corp | Production of lens of index distribution type |
| JPS6370203A (en) * | 1986-09-11 | 1988-03-30 | Brother Ind Ltd | Manufacture of distributed index type optical waveguide lens |
| JP2706237B2 (en) * | 1986-09-20 | 1998-01-28 | ブラザー工業株式会社 | Laser printer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940751A (en) * | 1972-08-22 | 1974-04-16 | ||
| JPS50104031A (en) * | 1974-01-16 | 1975-08-16 | ||
| JPS5518881A (en) * | 1978-07-27 | 1980-02-09 | Sony Corp | Inverter circuit |
| JPS5536962A (en) * | 1978-09-06 | 1980-03-14 | Canon Inc | Method for producing megnetic core |
-
1981
- 1981-12-18 JP JP20594081A patent/JPS58106503A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58106503A (en) | 1983-06-24 |
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