JPH044268B2 - - Google Patents
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- JPH044268B2 JPH044268B2 JP59156174A JP15617484A JPH044268B2 JP H044268 B2 JPH044268 B2 JP H044268B2 JP 59156174 A JP59156174 A JP 59156174A JP 15617484 A JP15617484 A JP 15617484A JP H044268 B2 JPH044268 B2 JP H044268B2
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Description
(産業上の利用分野)
本発明は鑞付けが可能な表面層を有するSi3N4
を主成分とするセラミツクス複合組成物及びその
製造法に関する。
(従来技術)
セラミツクスと金属を鑞接する際には一般にセ
ラミツクスと金属鑞の濡れ性を上げるためにセラ
ミツクス表面を金属化(メタライズ)処理した後
鑞付けが行われている。
従来からAl2O3セラミツクスなどの酸化物セラ
ミツクスをメタライズする方法としてMo、Wな
どの高融点金属とMnの混合粉末を用いて加湿H2
中で処理を行うテレフンケン法(高融点金属法)
が知られている。母材セラミツクスがAl2O3の場
合にはMo、Wの一部とMnの大部分が酸化され
てAl2O3及びAl2O3セラミツクスに含まれている
ガラス成分と反応し液相を形成してメタライズ層
中の空隙部分を埋め接着強度が向上する。
しかしながら母材がSi3N4を主成分とするセラ
ミツクスである場合には上記の様な液相が形成さ
れないため母材Si3N4セラミツクスとメタライズ
層の接着強度は非常に低く構造材料としての使用
に耐え得るものではない。
酸化物セラミツクスをメタライズするもう1つ
の方法として酸化物セラミツクスとCu板をはり
合わせ、大気中で加熱してCuを酸化させながら
酸化物セラミツクスと反応させる方法が報告され
ているが、母材がSi3N4を主成分とするセラミツ
クスの場合大気中1000℃付近で加熱を行うと、母
材Si3N4セラミツクスが酸化し、性能が著しく低
下することがわかつた。
またTi、Zrなどの活性な金属と、これと低融
点の合金を作るNi、Cu、Agとを共晶組成にした
金属ソルダーを用い、真空中で加熱してセラミツ
クスと金属を接合する方法も知られているが、
10-5Torr前後の高真空が必要であり工業的な方
法とは言えない。
(発明が解決しようとする問題点)
以上述べた様に従来からあるメタライズ方法で
は鑞付けが可能なSi3N4セラミツクスを作製する
ことは不可能であつた。本発明者らはこの問題を
解決し、Si3N4セラミツクスの鑞付けを可能にす
るべく研究を重ねた結果、本発明の鑞付可能な
Si3N4系セラミツクス複合組成物及びその製造方
法を完成するに至つた。
(問題点を解決するための手段)
即ち本発明のSi3N4を主成分とするセラミツク
ス複合組成物は、Mo、Nb、Ta、Ti、Wの1種
又は2種以上とB、C、N、Siの1種又は2種以
上からなる化合物と、Si3N4と周期律表のa族
元素並びにSi、Al、Mgの1種又は2種以上と
N、Oの1種又は2種からなる化合物よりなる薄
い組成物をその表面に有することを特徴とするも
のである。
又本発明のセラミツクス複合組成物の製造方法
は、成形されたSi3N4を主成分とするセラミツク
スの上にMo、Nb、Ta、Ti、Wの1種又は2種
以上とB、C、Nの1種又は2種以上を含む化合
物群よりなる粉末とSi3N4を主成分とするセラミ
ツクス粉末の混合組成物よりなる層を設けしかる
後に焼結することを特徴とするものである。
(作用)
本発明が従来のメタライズ方法と最も大きく異
なる点はSi3N4セラミツクスの焼結体にメタライ
ズ処理を施すのではなく焼結前の成形体上に
Mo、Nb、Ta、Ti、Wの炭化物、硼化物、窒化
物の粉末とSi3N4を主成分とする粉末の混合粉末
よりなる層を形成し、しかる後にSi3N4セラミツ
クス母材と表面層を同時に焼結して鑞付け可能な
面を形成するところにある。この時金属粉末と混
合するSi3N4を主成分とする粉末にはAl2O3、
MgO周期律表a族元素の酸化物の1種又は2
種以上が含まれている。
このため焼結後のSi3N4セラミツクス母材と表
面層の界面においては母材セラミツクスの結晶粒
子と表面層の結晶粒子が複雑に入り組んだ構造に
なつており、原子拡散による接合以外に機械的に
も界面の接着強度が向上する。
さらに表面層がMo、Nb、Ta、Ti、Wの炭化
物、硼化物、窒化物とSi3N4を主成分とするセラ
ミツクスの複雑に入り組んだ組織となり、しかも
表面層中のSi3N4を主成分とするセラミツクス母
材Si3N4セラミツクスが結合しているために母材
セラミツクスと表面層の接着強度が大巾に向上し
た。
ここで表面層中のMo、Nb、Ta、Ti、Wの炭
化物、硼化物、窒化物とSi3N4の組成比は金属と
鑞付けする際に高い鑞付け強度を維持するため次
の通りである。
母材Si3N4セラミツクスと表面層の接着強度を
上げるためには表面層中のSi3N4を主成分とする
セラミツクス粉末の割合を大きくすればよいが、
反面Si3N4が体積で60%以上になると金属鑞と表
面層との接着強度が急激に低下するために表面層
中のSi3N4の割合は60体積%以下に抑えなければ
ならない。これは表面層中に含まれている化合物
を全て原子に換算してMo、Nb、Ta、Ti、Wの
1種又は2種以上とSiのモル比が1以上であるこ
とにほぼ対応している。
表面層と母材Si3N4セラミツクスの熱膨張係数
に差があるため焼結後の冷却途中で熱応力が発生
し母材セラミツクスを破壊する恐れがあり表面層
の厚みはできるだけ薄く抑えた方が良い。表面層
と母材Si3N4セラミツクスとの熱膨張係数の差が
4×10-4以内であれば焼結後の表面層の厚さを1
mm以内に抑えた場合には焼結後の冷却途中で母材
Si3N4を破壊するほどの熱応力は発生せず問題な
く使用できた。これに対して表面層と母材Si3N4
セラミツクスとの熱膨張係数の差が4×10-6以内
であつても表面層の厚さが1mmを越えるような場
合には焼結後の冷却中に母材Si3N4セラミツクス
内部の表面層との界面近傍に発生する熱応力によ
つて母材Si3N4セラミツクス中に亀裂が発生する
場合があつた。また表面層と母材Si3N4セラミツ
クスとの熱膨張係数の差が4×10-6以上の場合で
も表面層の厚さをさらに薄くすることによつて母
材Si3N4中に亀裂が発生するのを抑えることがで
きた。
また、表面層にMo、Nb、Ta、Ti、Wの炭化
物、硼化物、窒化物を用いることにより上記金属
の単体を用いる場合に比べて、メタライズ面の耐
酸化性、耐食性が向上する。Si3N4セラミツクス
を高温構造材料として用いる場合にはこの耐酸化
性が非常に重要となる。Mo、Nb、Ta、Ti、W
はいずれも酸化し易い金属であり、金属単体に代
えて上記金属の炭化物、硼化物、窒化物を用いる
ことにより耐酸化性を飛躍的に向上させることが
できた。
(実施例)
以下本発明を詳細な実施例によつて説明する。
実施例 1
平均粒径0.1μmのSi3N4粉末95体積%と平均粒
径0.05μmのMgO粉末5体積%よりなる粉末をボ
ールミルを用いてエチルアルコール中で3日間湿
式混合した。この混合粉末を金型プレスを用いて
成形し、この成形体上面にWCと上記のSi3N4−
5体積%MgO混合粉末を第1表に示す割合で混
合した粉末を散布した後、更に軽く圧縮し表面層
と母材Si3N4セラミツクスを密着させた。この複
合体をN21気圧中1700℃で圧力を掛けずに焼結し
た。焼結後の表面層の厚さは0.3mmであつた。表
面層をX線回折で分析した結果WC、WSi2、
W5SiB2とβ型Si3N4のピークが観察された。こ
の表面層と鋼の間に銀鑞をはさみ、H2気流中650
℃で鑞付けを行つた。
これらのSi3N4セラミツクスと鋼の接合体の剪
断試験の結果を第1表に示す。
表面層中に60体積%以下のSi3N4を含む試料で
はSi3N4セラミツクスと鋼の接合強度が大きく剪
断強度が10Kg/mm2を越す試料があつた。
この時表面層中のSi3N4の含有量によつて破断
する部分が異なり表面層中に30体積%以下の
Si3N4を含む試料では剪断試験でSi3N4セラミツ
クス母材と表面層の界面で剥離しSi3N4が30〜60
体積%含まれる試料では表面層中或は銀鑞中で破
断した。表面層中のSi3N4量が60体積%を越す試
料では銀鑞と表面層の接着強度が低下するために
剪断試験を行うと銀鑞と表面層の界面で破断し強
度が小さかつた。
(Industrial Application Field) The present invention relates to Si 3 N 4 with a brazable surface layer.
The present invention relates to a ceramic composite composition containing as a main component and a method for producing the same. (Prior Art) When ceramics and metal are soldered together, brazing is generally performed after the surface of the ceramic is metallized in order to increase the wettability between the ceramic and metal solder. A conventional method for metallizing oxide ceramics such as Al 2 O 3 ceramics is to use a humidified H 2
Telefunken method (high melting point metal method)
It has been known. When the base ceramic is Al 2 O 3 , some of Mo, W and most of Mn are oxidized and react with Al 2 O 3 and the glass component contained in the Al 2 O 3 ceramics to form a liquid phase. The adhesive strength is improved by filling the voids in the metallized layer. However, when the base material is ceramics mainly composed of Si 3 N 4 , the above liquid phase is not formed, so the adhesive strength between the base material Si 3 N 4 ceramics and the metallized layer is very low, making it difficult to use as a structural material. It is not suitable for use. Another method of metallizing oxide ceramics has been reported in which the oxide ceramics and Cu plate are bonded together and heated in the air to oxidize the Cu and react with the oxide ceramics. In the case of ceramics whose main component is 3N4 , it was found that when heated in the air at around 1000°C, the base material Si3N4 ceramics oxidizes, resulting in a significant drop in performance. Another method is to use a metal solder with a eutectic composition of active metals such as Ti and Zr and Ni, Cu, and Ag, which form low-melting-point alloys, and heat it in a vacuum to join ceramics and metals. Although it is known,
It requires a high vacuum of around 10 -5 Torr, so it cannot be called an industrial method. (Problems to be Solved by the Invention) As described above, it has been impossible to produce Si 3 N 4 ceramics that can be brazed using conventional metallization methods. The present inventors solved this problem and conducted research to enable brazing of Si 3 N 4 ceramics.
We have completed a Si 3 N 4 ceramic composite composition and a method for producing the same. (Means for Solving the Problems) That is, the ceramic composite composition of the present invention containing Si 3 N 4 as a main component contains one or more of Mo, Nb, Ta, Ti, and W, and B, C, A compound consisting of one or more of N and Si, Si 3 N 4 , an element of group a of the periodic table, one or more of Si, Al, and Mg, and one or two of N and O. It is characterized by having on its surface a thin composition consisting of a compound consisting of: Further, the method for producing a ceramic composite composition of the present invention includes adding one or more of Mo, Nb, Ta, Ti , and W, B, C, The method is characterized in that a layer made of a mixed composition of a powder made of a compound group containing one or more kinds of N and a ceramic powder mainly composed of Si 3 N 4 is provided and then sintered. (Function) The biggest difference between the present invention and the conventional metallization method is that the metallization process is not performed on the sintered body of Si 3 N 4 ceramics, but on the formed body before sintering.
A layer is formed of a mixed powder of powders of carbides, borides, and nitrides of Mo, Nb, Ta, Ti, and W and powders mainly composed of Si 3 N 4 , and then a Si 3 N 4 ceramic base material is formed. The surface layer is simultaneously sintered to form a brazable surface. At this time, the powder mainly composed of Si 3 N 4 mixed with the metal powder contains Al 2 O 3 ,
MgO One or two oxides of group a elements of the periodic table
Contains more than one species. Therefore, at the interface between the Si 3 N 4 ceramic base material and the surface layer after sintering, the crystal grains of the base ceramic and the crystal grains of the surface layer have a complex structure, and mechanical bonding other than bonding by atomic diffusion is required. Also, the adhesive strength at the interface is improved. Furthermore, the surface layer becomes a complex structure of carbides, borides , and nitrides of Mo, Nb, Ta, Ti, and W, and ceramics whose main components are Si 3 N 4 . Because the ceramic base material Si 3 N 4 ceramics, which is the main component, is bonded, the adhesive strength between the base ceramic material and the surface layer has been greatly improved. Here, the composition ratio of Mo, Nb, Ta, Ti, W carbides, borides, nitrides and Si 3 N 4 in the surface layer is as follows in order to maintain high brazing strength when brazing with metal. It is. In order to increase the adhesive strength between the base material Si 3 N 4 ceramics and the surface layer, it is possible to increase the proportion of ceramic powder whose main component is Si 3 N 4 in the surface layer.
On the other hand, if Si 3 N 4 exceeds 60% by volume, the adhesive strength between the metal solder and the surface layer decreases rapidly, so the proportion of Si 3 N 4 in the surface layer must be kept below 60% by volume. This roughly corresponds to the fact that the molar ratio of one or more of Mo, Nb, Ta, Ti, and W to Si is 1 or more when converting all the compounds contained in the surface layer into atoms. There is. Because there is a difference in the coefficient of thermal expansion between the surface layer and the base material Si 3 N 4 ceramics, thermal stress may occur during cooling after sintering and destroy the base material ceramics, so it is better to keep the thickness of the surface layer as thin as possible. is good. If the difference in thermal expansion coefficient between the surface layer and the base material Si 3 N 4 ceramics is within 4 × 10 -4 , the thickness of the surface layer after sintering is 1
If it is kept within mm, the base material will melt during cooling after sintering.
There was no thermal stress that would destroy Si 3 N 4 and it could be used without any problems. In contrast, the surface layer and base material Si 3 N 4
Even if the difference in coefficient of thermal expansion with ceramics is within 4 × 10 -6 , if the thickness of the surface layer exceeds 1 mm, the inner surface of the base material Si 3 N 4 ceramic will be removed during cooling after sintering. There were cases in which cracks occurred in the base material Si 3 N 4 ceramics due to thermal stress generated near the interface with the layer. Furthermore, even if the difference in thermal expansion coefficient between the surface layer and the base material Si 3 N 4 ceramics is 4×10 -6 or more, it is possible to prevent cracks in the base material Si 3 N 4 by further reducing the thickness of the surface layer. was able to prevent this from occurring. Furthermore, by using carbides, borides, and nitrides of Mo, Nb, Ta, Ti, and W in the surface layer, the oxidation resistance and corrosion resistance of the metallized surface are improved compared to the case where the above-mentioned metals are used alone. This oxidation resistance is extremely important when using Si 3 N 4 ceramics as a high-temperature structural material. Mo, Nb, Ta, Ti, W
All of these are metals that are easily oxidized, and by using carbides, borides, and nitrides of the above metals instead of single metals, the oxidation resistance could be dramatically improved. (Examples) The present invention will be described below with reference to detailed examples. Example 1 A powder consisting of 95% by volume of Si 3 N 4 powder with an average particle size of 0.1 μm and 5% by volume of MgO powder with an average particle size of 0.05 μm was wet mixed in ethyl alcohol for 3 days using a ball mill. This mixed powder is molded using a mold press, and WC and the above Si 3 N 4 −
After scattering a 5 volume % MgO mixed powder in the ratio shown in Table 1, it was further lightly compressed to bring the surface layer and the base material Si 3 N 4 ceramic into close contact. This composite was sintered at 1700° C. in 1 atmosphere of N 2 without pressure. The thickness of the surface layer after sintering was 0.3 mm. As a result of analyzing the surface layer by X-ray diffraction, WC, WSi 2 ,
Peaks of W 5 SiB 2 and β-type Si 3 N 4 were observed. Silver solder was sandwiched between this surface layer and the steel, and 650°C was placed in an H2 air stream.
Brazing was carried out at ℃. Table 1 shows the results of shear tests on these Si 3 N 4 ceramic and steel joints. Among samples containing 60% by volume or less of Si 3 N 4 in the surface layer, the bonding strength between Si 3 N 4 ceramics and steel was high, with some samples having shear strength exceeding 10 Kg/mm 2 . At this time, the part that breaks depends on the content of Si 3 N 4 in the surface layer.
In a shear test, a sample containing Si 3 N 4 peeled off at the interface between the Si 3 N 4 ceramic base material and the surface layer, and the Si 3 N 4 content was 30 to 60%.
Samples containing % by volume fractured in the surface layer or in the silver solder. In samples where the amount of Si 3 N 4 in the surface layer exceeds 60% by volume, the adhesive strength between the silver solder and the surface layer decreases, so when a shear test is performed, the bond breaks at the interface between the silver solder and the surface layer, resulting in low strength. .
【表】
実施例 2
実施例1と同様の方法にて作製したSi3N4セラ
ミツクスの成形体の上面に60体積%のMo2C、
NbC、TaC、TiC、WCの各粉末と40体積%の母
材Si3N4セラミツクスと同一組成の粉末の混合物
の成形体を重ねN21atm中、200Kg/cm2の加圧下
1700℃でホツトプレスした。
ホツトプレス後の表面層の厚さは全て0.4mm前
後になる様に調整した。この表面層上にNiめつ
きを施し、H2気流中900℃でNiを拡散処理した後
H2気流中650℃で鋼に銀鑞付けした。これらの
Si3N4セラミツクスと鋼の接合体の剪断試験の結
果を第2表に示す。
ホツトプレス後表面層のX線回折を行うと第2
表に示すように炭化物以外にも、珪化物、硼珪化
物などの生成が認められた。珪化物の生成に関し
ては表面層中のSi3N4及び母材Si3N4と金属が反
応して生成したものと考えられる。さらにSi3N4
と金属並びにホツトプレスの際に炭素型とセラミ
ツクス成形体の間に離型剤として介在させたBN
の3者が反応して硼珪化物が生成したものと考え
られる。
実施例G〜Kの各試料を大気中400℃で1時間
保持したが、顕著な酸化は認められなかつた。一
方比較のためにMo、Nb、Ta、Ti、Wの各金属
を同一条件で酸化試験したところ、酸化皮膜の生
成が認められ、炭化物を使用することによる耐酸
化性の向上が確認できた。
実施例 3
実施例1と同様の方法にて作製したSi3N4セラ
ミツクスの成形体の上面に50体積%のWCと50体
積%の母材Si3N4セラミツクスと同一組成の粉末
の混合物の成形体を重ね、N21atm中200Kg/cm2
の加圧下1700℃でホツトプレスした。この時表面
層成形体の厚さを変化させることによりホツトプ
レス後の表面層の厚さが0.1〜2mmの各種厚さに
なるように調整した。
表面層をX線回折で分析した結果WC、WSi2、
W5SiB2とβ型Si3N4のピークが観察された。こ
の表面層上にNiめつきを施しH2中900℃でNiを
拡散処理した後、H2中650℃で鋼に銀鑞付けし
た。上記Si3N4、セラミツクスと鋼の接合体の剪
断試験の結果を第3表に示す。 [Table] Example 2 60% by volume of Mo 2 C ,
A molded body of a mixture of powders of NbC, TaC, TiC, and WC, 40% by volume of base material Si 3 N 4 ceramics, and powders of the same composition is stacked together under a pressure of 200 Kg/cm 2 in 1 atm of N 2
Hot pressed at 1700℃. The thickness of the surface layer after hot pressing was adjusted to approximately 0.4 mm. After applying Ni plating on this surface layer and performing Ni diffusion treatment at 900℃ in H2 gas flow,
The steel was silver-brazed at 650 °C in a stream of H2 . these
Table 2 shows the results of the shear test of the Si 3 N 4 ceramic and steel joint. After hot pressing, X-ray diffraction of the surface layer shows that the second
As shown in the table, in addition to carbides, the formation of silicides, borosilicides, etc. was observed. The formation of silicide is thought to be caused by the reaction of the metal with Si 3 N 4 in the surface layer and the base material Si 3 N 4 . Furthermore, Si 3 N 4
and metal, and BN interposed as a mold release agent between the carbon mold and the ceramic molded body during hot pressing.
It is thought that borosilicide was produced by the reaction of these three substances. Each sample of Examples G to K was held at 400° C. in the atmosphere for 1 hour, but no significant oxidation was observed. On the other hand, for comparison, when the metals Mo, Nb, Ta, Ti, and W were oxidized under the same conditions, the formation of an oxide film was observed, confirming that the oxidation resistance was improved by using carbide. Example 3 A mixture of 50% by volume of WC and 50% by volume of powder having the same composition as the base material Si 3 N 4 ceramics was placed on the top surface of a molded body of Si 3 N 4 prepared in the same manner as in Example 1. Stack the molded bodies, 200Kg/cm 2 in N 2 1atm
It was hot pressed at 1700℃ under pressure of At this time, the thickness of the surface layer molded product was varied so that the thickness of the surface layer after hot pressing was adjusted to various thicknesses of 0.1 to 2 mm. As a result of analyzing the surface layer by X-ray diffraction, WC, WSi 2 ,
Peaks of W 5 SiB 2 and β-type Si 3 N 4 were observed. Ni plating was performed on this surface layer, Ni was diffused in H 2 at 900°C, and then silver brazing was applied to the steel at 650°C in H 2 . Table 3 shows the results of the shear test of the Si 3 N 4 , ceramic and steel joint.
【表】【table】
【表】
ホツトプレス後の厚さが2mmの表面層を形成し
た場合にはホツトプレスの冷却過程で発生する熱
応力が母材Si3N4セラミツクスの破壊強度を越え
母材セラミツクス内部に亀裂が生じた。これに対
して表面層の厚さが1mm以下の場合には全く同一
の焼結条件でホツトプレスしたにもかかわらず母
材セラミツクス内部には亀裂が発生しなかつた。
この時母材Si3N4セラミツクスのホツトプレス後
の厚みが全ての試料で5mmになるように統一して
おいた。銀鑞付け後の剪断強度は第3表に示す結
果となつた。
実施例 4
平均粒径0.1μmのSi3N4粉末90体積%と平均粒
径0.05μmのAl2O3粉末5体積%、平均粒径0.5μm
のY2O3粉末5体積%よりなる粉末をボールミル
を用いてエチルアルコール中で3日間湿式混合し
た。この混合粉末を金型プレスを用いて成形し、
この成形体上面にMo2Cと上記のSi3N4−5体積
%Al2O3−5体積%Y2O3混合粉末を第4表に示す
割合で混合した粉末を散布した後、更に軽く圧縮
し表面層と母材Si3N4セラミツクスを密着させ
た。この複合体をN21気圧中1800℃で圧力を掛け
ずに焼結した。焼結後の表面層の厚さは0.5mmで
あつた。表面層をX線回折で分析した結果
Mo2C、MO3Si2、MoSi2とβ型Si3N4のピークが
観察された。この表面層と鋼の間に銀鑞をはさみ
H2気流中650℃で鑞付けを行つた。これらの
Si3N4セラミツクスと鋼の接合体の剪断試験の結
果を第4表に示す。
表面層中に60体積%以下のSi3N4を含む試料で
はSi3N4セラミツクスと鋼の接合強度が大きく剪
断強度が10Kg/mm2を越す試料があつた。[Table] When a surface layer with a thickness of 2 mm was formed after hot pressing, the thermal stress generated during the cooling process of the hot pressing exceeded the breaking strength of the base material Si 3 N 4 ceramics and cracks occurred inside the base material ceramics. . On the other hand, when the surface layer thickness was 1 mm or less, no cracks were generated inside the base ceramic even though hot pressing was performed under exactly the same sintering conditions.
At this time, the thickness of the base material Si 3 N 4 ceramics after hot pressing was set to be 5 mm for all samples. The shear strength after silver brazing was as shown in Table 3. Example 4 90% by volume of Si 3 N 4 powder with an average particle size of 0.1 μm and 5% by volume of Al 2 O 3 powder with an average particle size of 0.05 μm, average particle size of 0.5 μm
A powder consisting of 5% by volume of Y 2 O 3 powder was wet mixed in ethyl alcohol for 3 days using a ball mill. This mixed powder is molded using a mold press,
After scattering a powder mixture of Mo 2 C and the above-mentioned Si 3 N 4 -5 volume % Al 2 O 3 -5 volume % Y 2 O 3 mixed powder in the ratio shown in Table 4 on the upper surface of this compact, further The surface layer and base material Si 3 N 4 ceramics were brought into close contact by light compression. This composite was sintered at 1800° C. in 1 atmosphere of N 2 without pressure. The thickness of the surface layer after sintering was 0.5 mm. Results of analyzing the surface layer by X-ray diffraction
Peaks of Mo 2 C, MO 3 Si 2 , MoSi 2 and β-type Si 3 N 4 were observed. Silver solder is sandwiched between this surface layer and the steel.
Brazing was carried out at 650° C. in a stream of H 2 . these
Table 4 shows the results of the shear test of the Si 3 N 4 ceramic and steel joint. Among samples containing 60% by volume or less of Si 3 N 4 in the surface layer, the bonding strength between Si 3 N 4 ceramics and steel was high, with some samples having shear strength exceeding 10 Kg/mm 2 .
【表】
この時表面層中のSi3N4の含有量によつて破断
する部分が異なり表面層中に30体積%以下の
Si3N4を含む試料では剪断試験でSi3N4セラミツ
クス母材と表面層の界面で剥離しSi3N4が30〜60
体積%含まれる試料では表面層中或は銀鑞中で破
断した。表面層中のSi3N4が60体積%を越す試料
では銀鑞と表面層の接着強度が低下するために剪
断試験を行うと銀鑞と表面層の界面で破断し強度
が小さかつた。
実施例 5
平均粒径0.1μmSi3N4粉末85体積%と平均粒径
0.1μmのAl2O3粉末10%、平均粒径0.5μmのCeO2
粉末5体積%よりなる粉末をボールミルを用いて
エチルアルコール中で3日間湿式混合した。この
混合粉末を金型プレスを用いて成形しこの成形体
上面に50体積%のTiNと50体積%の母材Si3N4セ
ラミツクスと同一組成の粉末の混合物の成形体を
重ねN21気圧中200Kg/cm2の加圧下1700℃でホツ
トプレスした。
この時表面層成形体の厚さを変化させることに
よりホツトプレス後の表面層の厚さが0.1〜2mm
の各種厚さになるように調整した。表面層をX線
回折で分析した結果TiNとβ型Si3N4のピークが
観察された。この表面層上にNiめつきを施しH2
中900℃でNiを拡散処理した後H2中650℃で鋼に
銀鑞付けした。上記Si3N4セラミツクスと鋼の接
合体の剪断試験の結果を第5表に示す。[Table] At this time, the part that breaks depends on the content of Si 3 N 4 in the surface layer.
In a shear test, a sample containing Si 3 N 4 peeled off at the interface between the Si 3 N 4 ceramic base material and the surface layer, and the Si 3 N 4 content was 30 to 60%.
Samples containing % by volume fractured in the surface layer or in the silver solder. In samples where Si 3 N 4 in the surface layer exceeds 60% by volume, the adhesive strength between the silver solder and the surface layer decreases, and when a shear test is performed, the bond breaks at the interface between the silver solder and the surface layer, resulting in low strength. Example 5 Average particle size: 0.1 μm Si 3 N 4 powder 85% by volume and average particle size
10% Al2O3 powder with 0.1μm , CeO2 with average particle size 0.5μm
A powder consisting of 5% by volume of powder was wet mixed in ethyl alcohol for 3 days using a ball mill. This mixed powder is molded using a mold press, and a molded body of a mixture of powders having the same composition as 50 volume % TiN and 50 volume % base material Si 3 N 4 ceramics is placed on the top of this molded body under N 2 1 atm. It was hot pressed at 1700°C under a medium pressure of 200 kg/cm 2 . By changing the thickness of the surface layer molded product at this time, the thickness of the surface layer after hot pressing can be 0.1 to 2 mm.
It was adjusted to have various thicknesses. As a result of X-ray diffraction analysis of the surface layer, peaks of TiN and β-type Si 3 N 4 were observed. Ni plating is applied to this surface layer .
After diffusion treatment of Ni at 900°C in H2, the steel was silver-brazed at 650°C in H2 . Table 5 shows the results of the shear test of the Si 3 N 4 ceramic and steel joint.
【表】
ホツトプレス後の厚さが2mmの表面層を形成し
た場合にはホツトプレスの冷却過程で発生する熱
応力が母材Si3N4セラミツクスの破壊強度を越え
母材セラミツクス内部に亀裂が生じた。これに対
して表面層の厚さが1mm以下の場合には全く同一
の焼結条件でホツトプレスしたにもかかわらず母
材セラミツクス内部には亀裂が発生しなかつた。
この時母材Si3N4セラミツクスのホツトプレス後
の厚みが全ての試料で5mmになるように統一して
おいた。銀鑞付け後の剪断強度は第5表に示す結
果となつた。
(発明の効果)
以上説明したように本発明によれば鑞付接着強
度の高いSi3N4を主成分とするセラミツクス組成
物が得られる。又そのような組成物が簡易な方法
によつて得られる。[Table] When a surface layer with a thickness of 2 mm was formed after hot pressing, the thermal stress generated during the cooling process of the hot pressing exceeded the breaking strength of the base material Si 3 N 4 ceramics and cracks occurred inside the base material ceramics. . On the other hand, when the surface layer thickness was 1 mm or less, no cracks were generated inside the base ceramic even though hot pressing was performed under exactly the same sintering conditions.
At this time, the thickness of the base material Si 3 N 4 ceramics after hot pressing was set to be 5 mm for all samples. The shear strength after silver brazing was as shown in Table 5. (Effects of the Invention) As explained above, according to the present invention, a ceramic composition containing Si 3 N 4 as a main component and having high brazing adhesive strength can be obtained. Moreover, such a composition can be obtained by a simple method.
Claims (1)
Mo、Nb、Ta、Ti、Wの1種又は2種以上と
B、C、N、Siの1種又は2種以上からなる化合
物と、Si3N4と周期律表のa族元素並びにSi、
Al、Mgの1種又は2種以上とN、Oの1種又は
2種からなる化合物よりなる薄い組成物層を有す
ることを特徴とするセラミツクス複合体。 2 Si3N4を主成分とするセラミツクス表面上の
薄い組成物層のMo、Nb、Ta、Ti、Wの1種又
は2種以上とB、C、N、Siの1種又は2種以上
からなる化合物と周期律表のa族元素並びに
Si、Al、Mgの1種又は2種以上とN、Oの1種
又は2種からなる化合物とSi3N4の混合物の体積
比が2/3以上である特許請求の範囲第1項記載
のセラミツクス複合体。 3 Si3N4を主成分とするセラミツクス表面の薄
い組成物層の厚さが1mm以下である特許請求の範
囲第1項記載のセラミツクス複合体。 4 成形されたSi3N4を主成分とするセラミツク
スの上にMo、Nb、Ta、Ti、Wの1種又は2種
以上とB、C、Nの1種又は2種以上を含む化合
物群よりなる粉末とSi3N4を主成分とするセラミ
ツクス粉末の混合組成物よりなる層を設けしかる
後に焼結することを特徴とするセラミツクス複合
体の製造法。 5 特許請求の範囲第4項に記載のMo、Nb、
Ta、Ti、Wの1種又は2種以上とB、C、Nの
1種又は2種以上を含む化合物群よりなる粉末と
Si3N4を主成分とするセラミツクス粉末の混合組
成物の体積比が2/3以上である特許請求の範囲
第4項記載のセラミツクス複合体の製造法。 6 特許請求の範囲第4項に記載の焼結を行う際
に加圧しながら焼結する特許請求の範囲第4項記
載のセラミツクス複合体の製造法。 7 特許請求の範囲第4項に記載の焼結を行う際
に、非酸化性雰囲気中で焼結する特許請求の範囲
第4項記載のセラミツクス複合体の製造法。 8 特許請求の範囲第4項に記載のMo、Nb、
Ta、Ti、Wの1種又は2種以上とB、C、Nの
1種又は2種以上を含む化合物群よりなる粉末と
混合するSi3N4を主成分とするセラミツクスが母
材のSi3N4を主成分とするセラミツクスと同一組
成を持つ特許請求の範囲第4項記載のセラミツク
ス複合体の製造法。[Claims] 1. On the surface of ceramics whose main component is Si 3 N 4 ,
A compound consisting of one or more of Mo, Nb, Ta, Ti, and W and one or more of B, C, N, and Si, Si 3 N 4 , elements of group a of the periodic table, and Si ,
A ceramic composite characterized by having a thin composition layer made of a compound consisting of one or more of Al and Mg and one or more of N and O. 2. One or more of Mo, Nb, Ta, Ti, and W and one or more of B, C, N, and Si in a thin composition layer on the ceramic surface containing Si 3 N 4 as the main component. A compound consisting of a group a element of the periodic table and
Claim 1, wherein the volume ratio of the mixture of Si 3 N 4 and one or more of Si, Al, and Mg and one or more of N and O is 2/3 or more. Ceramics composite. 3. The ceramic composite according to claim 1, wherein the thin composition layer on the ceramic surface containing Si 3 N 4 as a main component has a thickness of 1 mm or less. 4 Compound group containing one or more of Mo, Nb, Ta, Ti, and W and one or more of B, C, and N on the molded ceramics mainly composed of Si 3 N 4 1. A method for producing a ceramic composite comprising: providing a layer made of a mixed composition of a powder consisting of Si 3 N 4 and a ceramic powder containing Si 3 N 4 as a main component, and then sintering it. 5 Mo, Nb, as described in claim 4,
A powder consisting of a compound group containing one or more of Ta, Ti, and W and one or more of B, C, and N.
5. The method for producing a ceramic composite according to claim 4, wherein the volume ratio of the mixed composition of ceramic powder containing Si 3 N 4 as a main component is 2/3 or more. 6. A method for producing a ceramic composite according to claim 4, wherein the sintering according to claim 4 is performed while pressurizing. 7. A method for producing a ceramic composite according to claim 4, wherein the sintering according to claim 4 is performed in a non-oxidizing atmosphere. 8 Mo, Nb, as described in claim 4,
Ceramics whose main component is Si 3 N 4 mixed with powder consisting of a compound group containing one or more of Ta, Ti, and W and one or more of B, C, and N are 4. A method for producing a ceramic composite according to claim 4 , which has the same composition as a ceramic whose main component is 3N4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59156174A JPS6140871A (en) | 1984-07-25 | 1984-07-25 | Solderable si3n4 ceramic composite composition and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59156174A JPS6140871A (en) | 1984-07-25 | 1984-07-25 | Solderable si3n4 ceramic composite composition and manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6140871A JPS6140871A (en) | 1986-02-27 |
| JPH044268B2 true JPH044268B2 (en) | 1992-01-27 |
Family
ID=15621968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59156174A Granted JPS6140871A (en) | 1984-07-25 | 1984-07-25 | Solderable si3n4 ceramic composite composition and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6140871A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6265991A (en) * | 1985-09-13 | 1987-03-25 | 株式会社東芝 | High heat conductive ceramics substrate |
| JPH0174376U (en) * | 1987-11-09 | 1989-05-19 | ||
| JP2719942B2 (en) * | 1988-12-03 | 1998-02-25 | 日本特殊陶業株式会社 | Silicon nitride sintered body and method for producing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5551774A (en) * | 1978-10-06 | 1980-04-15 | Kyoto Ceramic | Composition and method for metallizing nonnoxide ceramic body |
| JPS5551777A (en) * | 1978-10-07 | 1980-04-15 | Ngk Spark Plug Co | Silicon nitride sintered body with metallized surface and its manufacture |
-
1984
- 1984-07-25 JP JP59156174A patent/JPS6140871A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6140871A (en) | 1986-02-27 |
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