JPH0442769A - On-condition judging device for semiconductor breaker - Google Patents
On-condition judging device for semiconductor breakerInfo
- Publication number
- JPH0442769A JPH0442769A JP2146231A JP14623190A JPH0442769A JP H0442769 A JPH0442769 A JP H0442769A JP 2146231 A JP2146231 A JP 2146231A JP 14623190 A JP14623190 A JP 14623190A JP H0442769 A JPH0442769 A JP H0442769A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- current
- gto thyristor
- condition
- circuit breaker
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/72—Electric energy management in electromobility
Landscapes
- Electric Propulsion And Braking For Vehicles (AREA)
- Power Conversion In General (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的コ
(産業上の利用分野)
本発明は、直流電力を入力とするVVVF(可変電圧可
変周波数)インバータの保護装置として設置される半導
体遮断器の導通状態判別装置に関する。Detailed Description of the Invention [Purpose of the Invention (Industrial Application Field) The present invention is directed to the conduction state of a semiconductor circuit breaker installed as a protection device for a VVVF (Variable Voltage Variable Frequency) inverter that inputs DC power. Regarding a discrimination device.
(従来の技術)
電気鉄道用の高圧直流電源からVVVFインバータに入
力される負荷電流の開閉や故障電流の遮断をするために
半導体スイッチ素子を利用した半導体遮断装置が実用化
されている。従来、この半導体遮断装置の導通または非
導通状態を判別するのに、半導体スイッチ素子のゲート
信号により間接的に判別していた。(Prior Art) Semiconductor disconnection devices using semiconductor switching elements have been put into practical use for switching load current input to a VVVF inverter from a high-voltage DC power supply for electric railways and interrupting fault current. Conventionally, the conduction or non-conduction state of this semiconductor cut-off device has been determined indirectly based on the gate signal of the semiconductor switch element.
(発明が解決しようとする課題)
従来から使用されている機械式遮断器の場合、主接点と
連動する補助接点位置の開閉状態で遮断器の導通状態を
確実に判別することができた。この遮断器の導通状態を
判別することは、遮断器の誤動作を検知する上で非常に
重要なことである。(Problems to be Solved by the Invention) In the case of conventionally used mechanical circuit breakers, the conduction state of the circuit breaker could be reliably determined based on the open/closed state of the auxiliary contact position that interlocks with the main contact. Determining the conduction state of the circuit breaker is very important in detecting malfunction of the circuit breaker.
半導体遮断器においては、半導体スイッチ素子のゲート
信号により半導体遮断器の導通状態を間接的に判別して
いる。In a semiconductor circuit breaker, the conduction state of the semiconductor circuit breaker is indirectly determined based on a gate signal of a semiconductor switch element.
したがって、半導体遮断器の半導体スイッチ素子に電圧
が印加されていない場合、又は半導体スイッチ素子が破
壊されて導通状態になった場合等には、ゲート信号指令
と半導体スイッチ素子の導通状態が一致しない。このよ
うに、ゲート信号から半導体遮断器の導通状態を間接的
に判別することは、判別精度の信頼性が低いという問題
点があった。Therefore, when no voltage is applied to the semiconductor switch element of the semiconductor circuit breaker, or when the semiconductor switch element is broken and becomes conductive, the gate signal command and the conduction state of the semiconductor switch element do not match. In this way, indirectly determining the conduction state of the semiconductor circuit breaker from the gate signal has a problem in that the reliability of the determination accuracy is low.
本発明は、上記の従来技術の欠点を解決するためになさ
れたものであり、半導体遮断器の導通状態を直接的に判
別することのできる半導体遮断器の導通状態判別装置を
提供することを目的としている。The present invention was made in order to solve the above-mentioned drawbacks of the prior art, and an object of the present invention is to provide a conduction state determination device for a semiconductor circuit breaker that can directly determine the conduction state of a semiconductor circuit breaker. It is said that
[発明の構成]
(課題を解決するための手段)
上記目的を達成するため本発明は、入力側が絶縁変圧器
を介して交流電源と接続され、出力側が半導体遮断器の
半導体スイッチ素子と並列に接続された順変換器と、絶
縁変圧器の交流側に設けられ順変換器と半導体スイッチ
素子により閉回路が形成されているかどうかを検出する
手段と有することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention has an input side connected to an AC power source via an isolation transformer, and an output side connected in parallel with a semiconductor switching element of a semiconductor circuit breaker. The present invention is characterized in that it includes a forward converter connected to the insulating transformer, and means for detecting whether a closed circuit is formed by the forward converter and the semiconductor switch element, which is provided on the AC side of the isolation transformer.
(作 用)
このように構成されたものにおいては、半導体遮断器が
導通状態の場合には、自己消弧形半導体スイッチ素子が
導通状態である。この際、交流電源から供給される交流
電流は絶縁変圧器を介して順変換器で直流電流に変換さ
れる。そして、順変換器、逆流阻止ダイオード、自己消
弧形半導体スイッチ素子で構成される閉回路に順変換器
から出力される直流電流が流れる。(Function) In the device configured as described above, when the semiconductor circuit breaker is in a conductive state, the self-extinguishing semiconductor switch element is in a conductive state. At this time, the alternating current supplied from the alternating current power source is converted into direct current by a forward converter via an isolation transformer. Then, the DC current output from the forward converter flows through a closed circuit composed of the forward converter, the reverse current blocking diode, and the self-extinguishing semiconductor switching element.
半導体遮断器が非導通状態である場合には、自己消弧形
半導体スイッ素子が非導通状態である。When the semiconductor circuit breaker is in a non-conducting state, the self-arc-extinguishing semiconductor switch element is in a non-conducting state.
ゆえに前記閉回路に直流電流は流れない。したがって、
絶縁変圧器の2次側の閉回路に流れる直流電流を検出器
で検知することで半導体遮断器の導通状態を判別するこ
とが可能である。Therefore, no direct current flows through the closed circuit. therefore,
It is possible to determine the conduction state of the semiconductor circuit breaker by detecting the direct current flowing in the closed circuit on the secondary side of the isolation transformer with a detector.
なお、逆流阻止ダイオードは、半導体遮断器が非導通状
態の場合に、直流電源の高圧電流が順変換回路に流れな
いようにするものである。Note that the reverse current blocking diode prevents the high voltage current of the DC power supply from flowing into the forward conversion circuit when the semiconductor circuit breaker is in a non-conducting state.
(実施例) 第1図により、本発明の一実施例の構成を説明する。(Example) The configuration of an embodiment of the present invention will be explained with reference to FIG.
1は電気鉄道用の直流電源であり、自己消弧形半導体ス
イッチ素子であるGTOサイリスタ2及びこれに逆並列
接続されたダイオード3により構成される半導体遮断器
を介して、VVVFインバータ4に電力を供給する。1 is a DC power supply for electric railways, which supplies power to a VVVF inverter 4 through a semiconductor circuit breaker composed of a GTO thyristor 2, which is a self-extinguishing semiconductor switching element, and a diode 3 connected in antiparallel to the GTO thyristor 2. supply
5は単相交流電源であり、電流検出器6を介して絶縁変
圧器7の1次側に接続される。絶縁変圧器7の2次側に
は単相ブリッジ整流回路8が接続される。単相ブリッジ
整流回路8は単相交流電力を全波整流して直流電力を出
力する。単相ブリッジ整流回路8の出力側は流れる電流
を制限するために挿入された抵抗器9、逆流阻止ダイオ
ード10と直列接続される。この直列回路は、半導体遮
断器に並列に接続される。逆流阻止ダイオード10はG
TOサイリスタ2のオフ状態で高電圧を阻止している場
合に、単相ブリッジ整流回路8側に電流が回わり込まな
いようにするために設けられている。Reference numeral 5 denotes a single-phase AC power supply, which is connected to the primary side of the isolation transformer 7 via a current detector 6. A single-phase bridge rectifier circuit 8 is connected to the secondary side of the isolation transformer 7. The single-phase bridge rectifier circuit 8 performs full-wave rectification on single-phase AC power and outputs DC power. The output side of the single-phase bridge rectifier circuit 8 is connected in series with a resistor 9 and a reverse current blocking diode 10 inserted to limit the flowing current. This series circuit is connected in parallel to the semiconductor circuit breaker. The backflow blocking diode 10 is G
This is provided to prevent current from flowing into the single-phase bridge rectifier circuit 8 when the TO thyristor 2 is in the OFF state and high voltage is blocked.
このように構成された実施例の動作を説明する。The operation of the embodiment configured in this way will be explained.
今、GTOサイリスタ2が導通状態の場合には、単相ブ
リッジ整流回路8、抵抗器9、逆流阻止ダイオード10
、GTOサイリスタ2で構成される閉回路に電流が流れ
る。これに応じて絶縁変圧器7の一次側に負荷電流が流
れ、この電流を電流検出器6で検出する。Now, when the GTO thyristor 2 is in a conductive state, the single-phase bridge rectifier circuit 8, the resistor 9, and the reverse current blocking diode 10
, a current flows through a closed circuit composed of the GTO thyristor 2. In response, a load current flows through the primary side of the isolation transformer 7, and the current detector 6 detects this current.
また、GTOサイリスタ2が非導通状態の場合には、上
述の閉回路が構成されず、単相ブリッジ整流回路8から
電流が流れない。したがって絶縁変圧器7の一次側にも
電流が流れない。Further, when the GTO thyristor 2 is in a non-conductive state, the above-mentioned closed circuit is not formed and no current flows from the single-phase bridge rectifier circuit 8. Therefore, no current flows to the primary side of the isolation transformer 7 either.
このように、絶縁変圧器7の1次側に流れる電流を電流
検出器6で検知することにより、GTOサイリスタ2に
直流電源1の高電圧が印加されているかどうかにかかわ
らず、GTOサイリスタ2の導通状態あるいは非導通状
態を判別することができる。In this way, by detecting the current flowing to the primary side of the isolation transformer 7 with the current detector 6, the current of the GTO thyristor 2 is detected regardless of whether the high voltage of the DC power supply 1 is applied to the GTO thyristor 2. A conductive state or a non-conductive state can be determined.
第2図により、本発明の他の実施例の構成を説明する。The configuration of another embodiment of the present invention will be explained with reference to FIG.
単相交流電源5は、抵抗器11を介して絶縁変圧器7の
1次側に接続される。また、絶縁変圧器7の1次側電圧
を検出する電圧検出器12が接続されている。そして、
単相ブリッジ整流回路8は逆流阻止ダイオード10と直
列接続され、この直列回路は半導体遮断器に並列接続さ
れる。Single-phase AC power supply 5 is connected to the primary side of isolation transformer 7 via resistor 11 . Further, a voltage detector 12 for detecting the primary side voltage of the isolation transformer 7 is connected. and,
The single-phase bridge rectifier circuit 8 is connected in series with a reverse current blocking diode 10, and this series circuit is connected in parallel with a semiconductor circuit breaker.
上記のように構成された他の実施例の動作を以下に説明
する。The operation of another embodiment configured as described above will be described below.
GTOサイリスタ2が導通状態の場合には、絶縁変圧器
の2次側にある単相ブリッジ整流回路6、逆流阻止ダイ
オード10、GTOサイリスタ2により閉回路が構成さ
れるため、絶縁変圧器7の2次側は低インピーダンスと
なる。従って、絶縁変圧器7の1次側も低インピーダン
スとなり、1次側電圧は低電圧となる。この電圧値を電
圧検出器12で検出する。抵抗11はGTOサイリスタ
2の導通時に流れる電流を制限するために設けられてい
る。When the GTO thyristor 2 is in a conductive state, a closed circuit is formed by the single-phase bridge rectifier circuit 6, the reverse blocking diode 10, and the GTO thyristor 2 on the secondary side of the isolation transformer. The next side has low impedance. Therefore, the primary side of the isolation transformer 7 also has low impedance, and the primary side voltage becomes low. This voltage value is detected by a voltage detector 12. The resistor 11 is provided to limit the current flowing when the GTO thyristor 2 is conductive.
次にGTOサイリスタ2が非導通状態である場合には、
前述の閉回路が構成されないため絶縁変圧器7の2次側
は高インピーダンスとなる。したがって、絶縁変圧器7
の1次側も高インピーダンスとなり、1次電圧は単相交
流電源5の電圧値とほぼ同じ値を示す。この電圧を電圧
検出器12で検出する。Next, when GTO thyristor 2 is in a non-conducting state,
Since the aforementioned closed circuit is not configured, the secondary side of the isolation transformer 7 has high impedance. Therefore, the isolation transformer 7
The primary side of the AC power source 5 also has high impedance, and the primary voltage exhibits approximately the same value as the voltage value of the single-phase AC power supply 5. This voltage is detected by a voltage detector 12.
このように絶縁変圧器7の1次側に発生する電圧を電圧
検出器12で検知して、GTOサイリスタ2の導通状態
を判別することができる。このようにして、前述した一
実施例と同様な効果を得ることができる。In this way, by detecting the voltage generated on the primary side of the isolation transformer 7 with the voltage detector 12, the conduction state of the GTO thyristor 2 can be determined. In this way, effects similar to those of the embodiment described above can be obtained.
なお、抵抗器11の代わりにリレーを挿入して、GTO
サイリスタ2が導通状態である場合に1次側に流れる電
流によりリレーを吸引させることによっても、同様の効
果が得られる。In addition, by inserting a relay in place of the resistor 11, the GTO
A similar effect can also be obtained by attracting the relay with the current flowing to the primary side when the thyristor 2 is in a conductive state.
[発明の効果コ
本発明によれば、独立した交流電源より供給される電流
が半導体遮断器を通流するか、しないかで半導体遮断器
の導通状態を直接的に判別するので、半導体遮断器の導
通状態が正確に判別することが可能であり、信頼性の高
い半導体遮断器の導通状態判別装置を提供することかで
きる。[Effects of the Invention] According to the present invention, the conduction state of the semiconductor circuit breaker is directly determined based on whether or not the current supplied from the independent AC power supply passes through the semiconductor circuit breaker. It is possible to accurately determine the conduction state of a semiconductor circuit breaker, and it is possible to provide a highly reliable conduction state determination device for a semiconductor circuit breaker.
第1図は本発明の一実施例を示す構成図、第2図は本発
明の他の実施例を示す構成図である。
1・・・直流電源、 2・・・GTOサイリス
タ、3・・・ダイオード、
4・・・VVVFインバータ、
5・・・単相交流電源、 6・・・電流検出器、7
・・・絶縁変圧器、
8・・・単相ブリッジ整流回路、
9・・・抵抗器、
10・・・逆流阻止ダイオード、
11・・・抵抗器、 12・・・電圧検出器。
代理人 弁理士 則 近 憲 佑
第1図FIG. 1 is a block diagram showing one embodiment of the present invention, and FIG. 2 is a block diagram showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...DC power supply, 2...GTO thyristor, 3...Diode, 4...VVVF inverter, 5...Single-phase AC power supply, 6...Current detector, 7
... Isolation transformer, 8... Single-phase bridge rectifier circuit, 9... Resistor, 10... Backflow blocking diode, 11... Resistor, 12... Voltage detector. Agent Patent Attorney Noriyuki Chika Figure 1
Claims (1)
側が半導体遮断器の半導体スイッチ素子と並列に接続さ
れた順変換器と、 絶縁変圧器の交流側に設けられ順変換器と半導体スイッ
チ素子により閉回路が形成されているかどうかを検出す
る手段を有する半導体遮断器の導通状態判別装置。[Claims] A forward converter whose input side is connected to an AC power source via an isolation transformer and whose output side is connected in parallel to a semiconductor switching element of a semiconductor circuit breaker; A conduction state determination device for a semiconductor circuit breaker, which includes means for detecting whether a closed circuit is formed by a converter and a semiconductor switch element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146231A JPH0442769A (en) | 1990-06-06 | 1990-06-06 | On-condition judging device for semiconductor breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146231A JPH0442769A (en) | 1990-06-06 | 1990-06-06 | On-condition judging device for semiconductor breaker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0442769A true JPH0442769A (en) | 1992-02-13 |
Family
ID=15403076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2146231A Pending JPH0442769A (en) | 1990-06-06 | 1990-06-06 | On-condition judging device for semiconductor breaker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012217254A (en) * | 2011-03-31 | 2012-11-08 | Toshiba Corp | Electric vehicle control device |
-
1990
- 1990-06-06 JP JP2146231A patent/JPH0442769A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012217254A (en) * | 2011-03-31 | 2012-11-08 | Toshiba Corp | Electric vehicle control device |
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