JPH0442820B2 - - Google Patents
Info
- Publication number
- JPH0442820B2 JPH0442820B2 JP58047844A JP4784483A JPH0442820B2 JP H0442820 B2 JPH0442820 B2 JP H0442820B2 JP 58047844 A JP58047844 A JP 58047844A JP 4784483 A JP4784483 A JP 4784483A JP H0442820 B2 JPH0442820 B2 JP H0442820B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing chamber
- light
- chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】 本発明は光CVD装置に関する。[Detailed description of the invention] The present invention relates to an optical CVD apparatus.
従来、成膜材料の気化成分を含むガスが送り込
まれる真空処理室内に基板を設け、該基板を例え
ば抵抗加熱装置等の電気加熱により高温化させ、
該ガス中の成膜材料に化学反応を生じさせて該基
板表面にシリコン等の薄膜を形成する方法は
CVD（Chemical Vapor Deposition）法として知
られている。近時こうした電気加熱に代え光のエ
ネルギーを利用してガス分子を解離し、特定のラ
ジカル原子やイオン種を生成させることにより基
板上に薄膜を作成する光CVD法が提案され、こ
れによれば特性の良い膜を高速で成長させ得るの
で半導体デバイス製造プロセスへの適用が期待さ
れている。しかし乍らこの光CVD法では第１図
示のように光源ａを真空処理室ｂの外部に設け、
該処理室ｂの壁板の透光部ｃを介して基板ｄに当
てると、その光束ｅの範囲内の気化成分が該透光
部ｃの光束の通過部分に薄膜ｆ状に付着し、次第
に透過光量が減少するので基板ｄの表面の薄膜形
成速度が悪化する不都合を生じ勝ちである。その
解決の一手段として光源ａをa′と位置に移動さ
せ、光が透光部ｃの薄膜ｆの付着した部分を避け
て入射させることも考えられたが、比較的短時間
で透過光量が減少するため透光部ｃの薄膜ｆを洗
浄除去しなければならず、これに伴ない真空処理
室ｂに大気が導入されるので再度真空化して薄膜
形成を開始するまでの中断時間が長びき、能率良
く形成出来ない欠点がある。例えば基板ｄ上にシ
リコン膜を形成する場合その厚さが数百Åになる
と透光部ｃを通る光量が激減し、数千Åの厚さの
膜が必要なときには該透光部ｃを数回洗浄し、数
回に分けて成膜しなければならない。 Conventionally, a substrate is provided in a vacuum processing chamber into which a gas containing vaporized components of a film-forming material is fed, and the substrate is heated to a high temperature by electrical heating using, for example, a resistance heating device.
A method of forming a thin film of silicon or the like on the surface of the substrate by causing a chemical reaction in the film-forming material in the gas is
This is known as CVD (Chemical Vapor Deposition) method. Recently, an optical CVD method has been proposed in which a thin film is created on a substrate by using light energy to dissociate gas molecules and generate specific radical atoms and ion species instead of electric heating. Since films with good properties can be grown at high speed, it is expected to be applied to semiconductor device manufacturing processes. However, in this optical CVD method, the light source a is provided outside the vacuum processing chamber b as shown in the first diagram.
When the substrate d is irradiated through the light-transmitting part c of the wall plate of the processing chamber b, the vaporized components within the range of the light flux e adhere to the part of the light-transmitting part c through which the light flux passes, and gradually Since the amount of transmitted light is reduced, the speed of forming a thin film on the surface of the substrate d is likely to deteriorate. One way to solve this problem was to move the light source a to the position a' so that the light could avoid the part of the transparent part c where the thin film f was attached, but the amount of transmitted light could be reduced in a relatively short time. Therefore, the thin film f in the transparent part c must be cleaned and removed, and as a result, the atmosphere is introduced into the vacuum processing chamber b, which prolongs the interruption time until the vacuum is re-evacuated and thin film formation is started. However, it has the disadvantage that it cannot be formed efficiently. For example, when forming a silicon film on a substrate d, if the thickness becomes several hundred Å, the amount of light passing through the transparent part c will be drastically reduced, and if a film with a thickness of several thousand Å is required, the transparent part c will be The film must be washed several times and then deposited several times.
本発明はこうした不都合、欠点を解消すること
をその目的とするもので、成膜材料の気化成分を
含むガスが送り込まれる真空排気された真空処理
室内に基板を設け、該処理室の外部の光源から該
基板に光を当て、該基板の表面に該ガス中の成膜
材料の薄膜を形成するようしたものに於て、該真
空処理室に隣接して真空に排気された副室を設け
ると共に該副室と該処理室の間の壁板にオリフイ
スを設け、該副室内に該光源からの光線を該オリ
フイスの位置で集束させて該基板へと当てる光集
束装置を設置したことを特徴とする。 The purpose of the present invention is to eliminate these inconveniences and shortcomings.The present invention is aimed at solving these inconveniences and shortcomings. A thin film of the film-forming material contained in the gas is formed on the surface of the substrate by applying light to the substrate, and an evacuated sub-chamber is provided adjacent to the vacuum processing chamber; An orifice is provided in a wall plate between the sub-chamber and the processing chamber, and a light focusing device is installed in the sub-chamber to focus the light beam from the light source at the position of the orifice and to direct it to the substrate. do.
本発明の実施例を図面第２図につき説明すれ
ば、同図に於て１は真空ポンプに接続される排気
口２とガス供給口３を備えた真空処理室、４は該
処理室１内に設けた基板、５は該処理室１の外部
に設けた光源を示し、該光源５は必要に応じて移
動可能に載置され、その光束６は該処理室１の透
光性の壁板７を介して基板４を照射する。該処理
室１内は例えば0.75Torrの真空に維持されそこ
にSiH4その他の気化成分を含む水素等のガスが
ガス供給口３から供給されると光源５からの光束
６が当たつた部分のガス成分が励起解離され同時
に基板４が加熱されるので該ガスは化学反応を生
じ、Si等の気化成分が基板４上に薄膜状に付着す
る。 An embodiment of the present invention will be explained with reference to FIG. 2, in which 1 is a vacuum processing chamber equipped with an exhaust port 2 and a gas supply port 3 connected to a vacuum pump, and 4 is a vacuum processing chamber inside the processing chamber 1. 5 indicates a light source provided outside the processing chamber 1. The light source 5 is placed movably as required, and its luminous flux 6 illuminates the transparent wall plate of the processing chamber 1. The substrate 4 is irradiated via 7. The inside of the processing chamber 1 is maintained at a vacuum of, for example, 0.75 Torr, and when a gas such as hydrogen containing SiH 4 and other vaporized components is supplied from the gas supply port 3, the portion hit by the light beam 6 from the light source 5 is Since the gas components are excited and dissociated and the substrate 4 is heated at the same time, a chemical reaction occurs in the gas, and vaporized components such as Si adhere to the substrate 4 in the form of a thin film.
この場合前記したように光束が透過する処理室
の壁板にも気化成分が薄膜状に付着し、次第に基
板に到達する光量が減少する不都合があつたが、
本発明のものでは、該真空処理室１に隣接して真
空に排気された副室１０を設けると共に該副室１
０と該処理室１の間の壁板７にオリフイス１１を
設け、該副室１０内に前記光源５からの光束６を
該オリフイス１１の位置で集束させて該基板４へ
と当てる光集束装置８を設置することにより、前
記不都合を解消するようにした。 In this case, as mentioned above, the vaporized components adhered in a thin film to the wall plate of the processing chamber through which the light beam passes, and the amount of light reaching the substrate gradually decreased.
In the present invention, an evacuated sub-chamber 10 is provided adjacent to the vacuum processing chamber 1, and the sub-chamber 10 is provided adjacent to the vacuum processing chamber 1.
An orifice 11 is provided in the wall plate 7 between the processing chamber 1 and the processing chamber 1, and a light focusing device is provided in which the light beam 6 from the light source 5 is focused in the subchamber 10 at the position of the orifice 11 and applied to the substrate 4. 8, the above-mentioned inconvenience was solved.
該光束６を該壁板７の付近で集束させてオリフ
イス１１を通過させると、該光束６が壁板７に当
たることがなくなるので、従来のように光束６の
基板４への光路の途中にその光量を減少させるよ
うな薄膜が堆積することがなく、長時間にわたり
基板４上に薄膜を形成すべく光を照射することが
出来、基板４上に厚手の膜を形成することが出来
る。 When the light beam 6 is focused in the vicinity of the wall plate 7 and passed through the orifice 11, the light beam 6 no longer hits the wall plate 7, so that the light beam 6 does not reach the substrate 4 in the middle of its optical path as in the conventional case. It is possible to irradiate light to form a thin film on the substrate 4 for a long time without depositing a thin film that would reduce the amount of light, and it is possible to form a thick film on the substrate 4.
また、該処理室１の壁板７に開口を設けると、
該処理室１内で使用するガスがその外部へ流出し
たり、外部から他のガスが混入することになり、
ガスの無駄や基板４に形成される膜質が変化して
好ましくないが、この好ましくない事態は、本発
明の如く壁板７にオリフイス１１を設けることに
よつて解消され、該処理室１と副室１０との間の
ガスの流通を極めて少なくすることが出来る。こ
れを更に説明すると、該処理室１と副室１０の真
空圧を各排気口２，９を介して差動排気により、
例えば処理室１の0.75Torrに対し副室１０をこ
れよりも低い7.5×10-6Torrとすれば、ガスは処
理室１から副室１０内に殆ど入り込まなくなり、
該副室10内での膜の堆積速度を基板４の表面の膜
の堆積速度の約10000分の１とすることが出来る。 Furthermore, if an opening is provided in the wall plate 7 of the processing chamber 1,
The gas used in the processing chamber 1 may leak to the outside, or other gas may enter from the outside.
Although it is undesirable because gas is wasted and the quality of the film formed on the substrate 4 is changed, this undesirable situation can be solved by providing the orifice 11 in the wall plate 7 as in the present invention, and the processing chamber 1 and the The flow of gas to and from the chamber 10 can be extremely reduced. To explain this further, the vacuum pressure in the processing chamber 1 and the auxiliary chamber 10 is differentially pumped through the exhaust ports 2 and 9.
For example, if the auxiliary chamber 10 is set to 7.5×10 -6 Torr, which is lower than the 0.75 Torr of the processing chamber 1, almost no gas will enter the auxiliary chamber 10 from the processing chamber 1.
The film deposition rate within the subchamber 10 can be approximately 1/10000 of the film deposition rate on the surface of the substrate 4.
１２はミラーである。 12 is a mirror.
このように本発明によるときは、基板が設けら
れる真空処理室に隣接して真空に排気された副室
を設けると共に該副室と該処理室の間の壁板にオ
リフイスを設け、剤副室内に該光源からの光束を
該オリフイスの位置で集束させて該基板へと当て
る光集束装置を設置したので、基板への入射光量
が長時間にわたり減少することがなく、しかも副
室の光集束装置で光束を集束してオリフイスの狭
い面積を介して基板へと入射させるため、該処理
室内のガスが副室へ漏れる量も少なくなり、効率
の良い光CVDを行える等の効果がある。 As described above, according to the present invention, an evacuated sub-chamber is provided adjacent to the vacuum processing chamber in which the substrate is provided, and an orifice is provided in the wall plate between the sub-chamber and the processing chamber. Since a light focusing device is installed in which the light beam from the light source is focused at the position of the orifice and applied to the substrate, the amount of light incident on the substrate does not decrease over a long period of time, and the light focusing device in the sub-chamber is installed. Since the light beam is focused and made incident on the substrate through the narrow area of the orifice, the amount of gas in the processing chamber leaking into the sub-chamber is reduced, resulting in more efficient optical CVD.
第１図は先に提案されたCVD装置の截断側面
図、第２図は本発明の実施例の截断側面図、第３
図は本発明の第２実施例の截断側面図である。
１……真空処理室、４……基板、５……光源、
６……光束、７……壁板、８……光集束装置、１
１……オリフイス。
FIG. 1 is a cutaway side view of the previously proposed CVD device, FIG. 2 is a cutaway side view of an embodiment of the present invention, and FIG.
The figure is a cutaway side view of a second embodiment of the invention. 1... Vacuum processing chamber, 4... Substrate, 5... Light source,
6...Light flux, 7...Wall plate, 8...Light focusing device, 1
1... Orifice.
Claims (1)
る真空排気された真空処理室内に基板を設け、該
処理室の外部の光源から該基板に光を当て、該基
板の表面に該ガス中の成膜材料の薄膜を形成する
ようにしたものに於て、該真空処理室に隣接して
真空に排気された副室を設けると共に該副室と該
処理室の間の壁板にオリフイスを設け、該副室内
に該光源からの光束を該オリフイスの位置で集束
させて該基板へと当てる光集束装置を設置したこ
とを特徴とする光CVD装置。1. A substrate is placed in an evacuated vacuum processing chamber into which a gas containing vaporized components of the film-forming material is fed, and light is applied to the substrate from a light source outside the processing chamber, so that the surface of the substrate is exposed to the vaporized components of the gas. In a device for forming a thin film of a film material, a sub-chamber evacuated to vacuum is provided adjacent to the vacuum processing chamber, and an orifice is provided in a wall plate between the sub-chamber and the processing chamber, An optical CVD apparatus characterized in that a light focusing device is installed in the subchamber to focus a light beam from the light source at the position of the orifice and direct it to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58047844A JPS59175118A (en) | 1983-03-24 | 1983-03-24 | Optical cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58047844A JPS59175118A (en) | 1983-03-24 | 1983-03-24 | Optical cvd device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59175118A JPS59175118A (en) | 1984-10-03 |
| JPH0442820B2 true JPH0442820B2 (en) | 1992-07-14 |
Family
ID=12786672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58047844A Granted JPS59175118A (en) | 1983-03-24 | 1983-03-24 | Optical cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59175118A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5023570A (en) * | 1973-06-29 | 1975-03-13 | ||
| JPS5940523A (en) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | Manufacture of semiconductor thin film |
-
1983
- 1983-03-24 JP JP58047844A patent/JPS59175118A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59175118A (en) | 1984-10-03 |
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