JPH0442984A - Manufacture of group ii-vi compound semiconductor light emitting element - Google Patents
Manufacture of group ii-vi compound semiconductor light emitting elementInfo
- Publication number
- JPH0442984A JPH0442984A JP14809490A JP14809490A JPH0442984A JP H0442984 A JPH0442984 A JP H0442984A JP 14809490 A JP14809490 A JP 14809490A JP 14809490 A JP14809490 A JP 14809490A JP H0442984 A JPH0442984 A JP H0442984A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- compound semiconductor
- semiconductor light
- manufacturing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 7
- 150000002367 halogens Chemical class 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000003213 activating effect Effects 0.000 claims abstract description 4
- 239000012212 insulator Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 239000011733 molybdenum Substances 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 23
- 238000001312 dry etching Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- -1 etc. Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000003776 cleavage reaction Methods 0.000 description 9
- 230000007017 scission Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000005083 Zinc sulfide Substances 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910020257 Cl2F2 Inorganic materials 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 102000016942 Elastin Human genes 0.000 description 1
- 108010014258 Elastin Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920002549 elastin Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ＩＩ−ＶＩ族族化合物厚導体発光素子製遣方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a thick conductor light emitting device made of II-VI group compounds.
［従来の技術］
セレン化亜鉛（ＺｎＳｅ）、硫化亜鉛（ＺｎＳ）など、
およびこれらの混晶より成るＩＩ−ＶＩ族化合物半導体
発光素子において、従来の光共振器の反射面は、 （１
１０）結晶面のへき開性を利用して形成されている。[Prior art] Zinc selenide (ZnSe), zinc sulfide (ZnS), etc.
In a II-VI compound semiconductor light emitting device made of these mixed crystals, the reflective surface of a conventional optical resonator is (1
10) Formed by utilizing the cleavage properties of crystal planes.
［発明が解決しようとする課題］
しかし、前述の従来技術によるＩＩ−ＶＴ族化合物半導
体発光素子の共振器反射面の加工には、以下の問題があ
る。[Problems to be Solved by the Invention] However, the processing of the resonator reflective surface of the II-VT group compound semiconductor light emitting device according to the above-mentioned prior art has the following problems.
前述のへき開面は原子オーダの平滑性、平行性を有する
優れた反射面である。しかしながら、へき開により作製
される発光素子は、へき関し、チップにすることにより
初めてその特性を示すものであり、ウェハー単位での特
性評価をおこなうことは不可能で、最終製品に近い状態
で評価を必要があり、特性が悪い場合の損失が大きい。The above-mentioned cleavage plane is an excellent reflective surface having smoothness and parallelism on the atomic order. However, light-emitting devices manufactured by cleavage exhibit their characteristics only after being cleaved and made into chips, and it is impossible to evaluate the characteristics on a wafer-by-wafer basis. If the characteristics are bad, the loss will be large.
またへき開工程は微細化が困難で、素子サイズも共振器
長に依存し、０ＥＩＣなど集積化を考える場合に大きな
障害となっていた。Further, the cleavage process is difficult to miniaturize, and the element size also depends on the resonator length, which has been a major obstacle when considering integration such as 0EIC.
さらに、Ｕ−ＶＩ族化合物半導体は、ｍ−ｖ族化合物半
導体よりもイオン結合性が大きいため、機械的強度が弱
い。そのためへき開工程など機械的要素の高い工程にお
いてはへき開面などにクラックが発生しやすく、歩留ま
りが大きく低下していた。このようにＩＩ−ＶＩ族化合
物半導体のへき開はｍ−ｖ族化合物半導体に比べ難しく
、光共振面の作製には、へき開にかわる機械的要素の少
ない製造方法が必要とされていた。Furthermore, since the U-VI group compound semiconductor has greater ionic bonding than the m-v group compound semiconductor, its mechanical strength is weaker. Therefore, in processes with high mechanical elements such as the cleavage process, cracks are likely to occur on the cleavage planes, resulting in a significant decrease in yield. As described above, cleavage of II-VI group compound semiconductors is more difficult than that of m-v group compound semiconductors, and a manufacturing method that requires fewer mechanical elements in place of cleavage is required to produce an optical resonant surface.
そこで本発明は、上記問題点を解決するもので、その目
的とするところは、微細加工が可能で、再現性、実用性
があるＩＩ−ＶＩ族化合物半導体発光素子の共振器反射
面の製造方法を提供するところにある。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems, and its purpose is to provide a method for manufacturing a resonator reflective surface of a II-VI group compound semiconductor light emitting device, which is capable of microfabrication, has reproducibility, and is practical. It is in a place where we provide.
［課題を解決するための手段］
本発明の化合物半導体のエツチング方法は、■−■族化
合物半導体より成る半導体発光素子の製造方法において
、光共振器面は、エツチングマスクを形成する工程と、
反応性ガスを放電室分離型のマイクロ波励起・ＥＣＲプ
ラズマ室で活性化させ、被処理材料に一様な方向を持っ
たイオンビームを照射することによりドライエツチング
を行う工程により形成することを特徴としている。[Means for Solving the Problems] A compound semiconductor etching method of the present invention is a method for manufacturing a semiconductor light emitting device made of a ■-■ group compound semiconductor, in which an optical resonator surface is formed by forming an etching mask;
It is characterized by the process of dry etching by activating a reactive gas in a microwave excitation/ECR plasma chamber with a separate discharge chamber and irradiating the material to be treated with an ion beam with a uniform direction. It is said that
また、エツチングマスクの材質は、フォトレジスト、シ
リコン酸化物、シリコン窒化物などの絶縁物、モリブデ
ン、ニッケルなどの金属であることを特徴としている。Further, the material of the etching mask is characterized in that it is a photoresist, an insulator such as silicon oxide or silicon nitride, or a metal such as molybdenum or nickel.
また、反応性ガスは、少なくともハロゲン元素を含むこ
とを特徴としている。Further, the reactive gas is characterized in that it contains at least a halogen element.
また、反応性ガスの圧力は、５Ｘ１０−３Ｐａがら１Ｐ
ａの範囲であることを特徴としている。In addition, the pressure of the reactive gas is 5X10-3Pa to 1P
It is characterized by being in the range of a.
また、マイクロ波入射出力は、１Ｗ以上１ｋＷ以下の範
囲であることを特徴としている。Further, the microwave input power is characterized in that it is in a range of 1 W or more and 1 kW or less.
また、イオンビームを放電室より被処理材料に引き出す
ための電圧は、０７以上１ｋＶ以下の範囲であることを
特徴としている。Further, the voltage for drawing the ion beam from the discharge chamber to the material to be processed is in the range of 0.07 to 1 kV.
また、エツチング時の被処理材料のの温度は０℃以上８
０℃以下であることを特徴としている。In addition, the temperature of the material to be processed during etching must be 0°C or higher.
It is characterized by a temperature of 0°C or lower.
［実 施 例コ 以下、本発明の実施例を図面に基づいて説明する。[Implementation example] Embodiments of the present invention will be described below based on the drawings.
まず第３図に本発明の実施例における反応性イオンビー
ムエツチング装置の構成概略断面図を示す。反応性の強
いハロゲン元素を含むガスをエツチングガスとして用い
るため、試料準備室１１とエツチング室１２がゲートバ
ルブ２４により分離された構造となっており、エツチン
グ室１２は常に高真空状態に保たれている。１３は電子
・サイクロトロン共鳴（ＥＣＲ）プラズマ室であり、磁
場発生用円筒ドーナッツ型コイル１４で囲まれ、マイク
ロ波導波管１５との接続部には、マイクロ波導入石英窓
がある。マイクロ波で電離・発生した電子は、軸対称磁
場によりサイクロトロン運動を行いながらガスと衝突を
繰り返す。この回転周期は、磁場強度が、例えば８７５
ガウスのときマイクロ波の周波数、例えば２．４５ＧＨ
ｚと一致し、電子系は共鳴的にマイクロ波のエネルギー
を吸収する。このため低いガス圧でも放電が持続し、高
いプラズマ密度が得られ、反応性ガスが長寿命で使用で
きる。さらに中心部での高い電解分布により、電子・イ
メ゛ンが中心部に集束するので、イオンによるプラズマ
室側壁のスノで・ツタ効果が小さ（、高清浄なプラズマ
が得られる。ＥＣＲプラズマ室１３で発生したイオンは
、メ・ソシュ状の引出し電極部１６で加速され、試料１
７に照射される。First, FIG. 3 shows a schematic cross-sectional view of the configuration of a reactive ion beam etching apparatus according to an embodiment of the present invention. Since a gas containing highly reactive halogen elements is used as the etching gas, the sample preparation chamber 11 and the etching chamber 12 are separated by a gate valve 24, and the etching chamber 12 is always kept in a high vacuum state. There is. Reference numeral 13 denotes an electron-cyclotron resonance (ECR) plasma chamber, which is surrounded by a cylindrical donut-shaped coil 14 for generating a magnetic field, and has a microwave-introducing quartz window at the connection part with the microwave waveguide 15. Electrons ionized and generated by microwaves repeatedly collide with gas while performing cyclotron motion due to an axisymmetric magnetic field. This rotation period is such that the magnetic field strength is, for example, 875
When Gaussian, the microwave frequency is, for example, 2.45 GH.
z, the electronic system absorbs microwave energy resonantly. Therefore, discharge can be sustained even at low gas pressures, high plasma density can be obtained, and reactive gases can be used for a long time. Furthermore, due to the high electrolytic distribution at the center, electrons and images are focused at the center, so the scorch and ivy effects on the side walls of the plasma chamber caused by ions are small (highly clean plasma can be obtained. ECR plasma chamber 13 The ions generated at
7 is irradiated.
サンプルホルダー１８は、マニピコ、レータ１９により
鉛直方向を軸として３６０６回転させることができ、試
料に入射するイオンビームの方向を変えることができる
。The sample holder 18 can be rotated 3606 degrees around the vertical direction by a rotor 19, and the direction of the ion beam incident on the sample can be changed.
第１図は、本発明の一実施例を示す半導体１ノーザの構
造斜視図である。ｎ型ＧａＡｓ基板１上にｎ型ＺｎＳ
ｅ層２、Ｚ ｎ ＳｘＴ ｅ ＋−ｘ （Ｘ＝ ０．
３５）層３、ｐ型Ｚｎ５ｅ層４を積層した構造であり、
５．６は各々ｎ型、ｐ型オーミック電極である。 Ｚｒ
１Ｓｅ、、 Ｚｎ５ｘＴｅ＋−ｘ（Ｘ＝０． ３５）は
ほぼ格子定数が同じで、エネルギーギヤツブはＺｎＳ
ｅの方が約０．２ｅＶ大きいため、Ｚｎ５ｅ層はクラッ
ド層として機能する。光共振面７は、本発明による反応
性イオンビームエツチング法により形成されている。第
２図（ａ）〜（ｄ）は、第１図の素子の作製工程を示し
たものである。まず、ＳｔドープＧ ａ Ａ ｓ基板１
上にＩｎあるいはＧａドープのＺ ｎ Ｓ ｅ Ｊｉ５
２、Ｚ ｎ ＳｘＴ ｅ ＋−ｘ （Ｘ−〇、３５）層
３、ＮドープＺｎ５ｅ層４を分子線エピタキシャル成長
法などにより積層させ、その後ｎ型電極５、ｐ型電極６
を形成する。次にフォトレジスト（ポジタイプ）８を基
板表面全面にコーティングＬ２５０℃で３０〜１２０分
ベーキングを行う。そＩ２てＴｉ９を約１０００Ａｉ子
ビーム蒸着法などにより形成する。 （第２図（ａ））
次に第２図（１））に示すように、通常のフォトリング
ラフイエ程により、フ第１・レジスト１０のパターン形
成を行う。次にフォトレジスト１０をマスクとしてＴｉ
９のエツチングを行う、。FIG. 1 is a structural perspective view of a semiconductor 1 noser showing an embodiment of the present invention. n-type ZnS on n-type GaAs substrate 1
e layer 2, Z n SxT e +-x (X = 0.
35) It has a structure in which layer 3 and p-type Zn5e layer 4 are laminated,
5.6 are n-type and p-type ohmic electrodes, respectively. Zr
1Se, Zn5xTe+-x (X=0.35) have almost the same lattice constant, and the energy gear is similar to that of ZnS.
Since e is larger by about 0.2 eV, the Zn5e layer functions as a cladding layer. The optical resonant surface 7 is formed by the reactive ion beam etching method according to the present invention. FIGS. 2(a) to 2(d) show the manufacturing process of the device shown in FIG. 1. First, St-doped Ga As substrate 1
In- or Ga-doped Z n S e Ji5 on top
2. A Z n SxT e +-x (X-〇, 35) layer 3 and an N-doped Zn5e layer 4 are laminated by molecular beam epitaxial growth, and then an n-type electrode 5 and a p-type electrode 6 are formed.
form. Next, a photoresist (positive type) 8 is coated over the entire surface of the substrate and baked at 250° C. for 30 to 120 minutes. Then, Ti9 is formed using about 1000 Al beam evaporation method. (Figure 2(a))
Next, as shown in FIG. 2(1)), a pattern of the first resist 10 is formed by a normal photolithography process. Next, using the photoresist 10 as a mask, Ti
9. Perform etching.
エツチング方法は、ウェットエツチングでは、緩衝フッ
酸溶液を用い、ドライエ・ノチングでは、ＣＦ４ガスを
用いた反応性イオンエツチング（ＲＩＥ）法を用いるが
、精密なパターン転写を行うには、サイドエツチング量
の僅少なドライエツチングの方が望ま１．い。そしてＴ
ｉ９をマスクとして、フォトレジスト
用いたＲＩＥ法により行う。 （第２図（Ｃ））このと
き注意しなければならないことは、酸素ガスの圧力であ
る。テーパーを持たない垂直な断面形状のエツチングマ
スクの作製には、通常の平行平板型のドライエ、チング
装置を用いた場合、酸素ガスの圧力は５Ｐａ程度が望ま
しい。圧力を高＜ １，過ぎると、エツチングが等方的
に進行するので、この場合適していない。フォトレジス
ト８のエツチングマスクとして用いたＴｉ９は緩衝フ。As for the etching method, wet etching uses a buffered hydrofluoric acid solution, and dry etching uses reactive ion etching (RIE) using CF4 gas, but in order to perform precise pattern transfer, it is necessary to reduce the amount of side etching. Slight dry etching is preferable 1. stomach. And T
The RIE method is performed using photoresist using i9 as a mask. (Fig. 2 (C)) What must be noted at this time is the pressure of the oxygen gas. When an ordinary parallel plate type dryer and etching device is used to produce an etching mask with a vertical cross-sectional shape without a taper, the pressure of oxygen gas is preferably about 5 Pa. If the pressure is too high <1, the etching proceeds isotropically and is not suitable in this case. The Ti9 used as an etching mask for the photoresist 8 is a buffer film.
酸溶液などで除去しておく。Remove with acid solution etc.
次に、反応性イオンビームエツチングを行う。Next, reactive ion beam etching is performed.
エツチングガスとして純塩素ガス（９９，９９９％）、
ガス圧力ＩＸＩＯ−’Ｐａ、マイクロ波入射出力２００
Ｗ， 引出１２電圧４００Ｖ、イオンビムの入射方向
は基板に垂直方向の条件で工・ノチングを行った。この
ときのＺｎＳｅＳ ＺｎＳＴｅのエツチング速度は約８
５ ０ Ａ／分、フォトレジストは約２ ５ Ｏ Ａ
／分であった。フォトンシストマスク１０が垂直断面で
あり、ＺｎＳｅとＺｎＳＴｅが等速工，チングであるた
め、第２図（ｄ）に示すように、ヘテロ接合界面でもス
ムースな垂直端面が得られる。この垂直端面は原子面レ
ベルで平滑なものであり、またエツチングによるダメジ
もほとんどないものであり、半導体１／−ザの共振面と
して利用できる。またここて多少複雑な工程によりマス
クの作製を行っているが、この理由は、フォトレジスト
をマスクとする場合、通常のフォトリソ工程により作製
されｆ：マスクがテーパーを持つため垂直な断面が得ら
れないためである。Pure chlorine gas (99,999%) as etching gas,
Gas pressure IXIO-'Pa, microwave input power 200
W, extraction 12 voltage was 400 V, and the etching/notching was performed under the conditions that the ion beam incident direction was perpendicular to the substrate. The etching rate of ZnSeS ZnSTe at this time was approximately 8
50 A/min, photoresist approximately 25 O A
/minute. Since the photon cyst mask 10 has a vertical cross section and the ZnSe and ZnSTe are processed using constant speed processing, a smooth vertical end face can be obtained even at the heterojunction interface, as shown in FIG. 2(d). This vertical end face is smooth at the atomic level and is hardly damaged by etching, so it can be used as a resonant surface of the semiconductor 1/- laser. In addition, the mask is manufactured through a somewhat complicated process.The reason for this is that when a photoresist mask is used, it is manufactured using a normal photolithography process, and since the mask has a taper, a vertical cross section cannot be obtained. This is because there is no
この後残留しているフォト１ノジストをアノンングなど
により除去Ｉ，、へき開などにより素子の分離を行えば
第１図の素子が完成する。このへき間は単なる分離の工
程であるため従来の共振面作製のような厳密さは要求さ
れない。Thereafter, the remaining photoresist is removed by anoning or the like, and the device is separated by cleaving or the like to complete the device shown in FIG. Since this gap is a simple separation step, it does not require the same precision as in conventional resonant surface fabrication.
以上のような垂直でありかつ平滑でありまたダメージの
少ないエツチング条件は以下の通りである。まずガス圧
力についてはイオンビームと中性粒子の平均自由工程が
同程度になればエツチングに指向性がなくなることと、
実用的なエツチング速度を得るという理由からｌＸｌ０
−３Ｐａ以上１Ｐａ以下がよい。マイクロ波入射出力に
関しては出力を高くし過ぎるとプラズマ温度が上昇し電
極の熱変形がおこったり、基板温度も輻射熱てあつがっ
てしまい温度制御が困難となるため１Ｗ以上１０００Ｗ
以下がよい。引出し電圧は、高すぎれば基板に大きなダ
メージを与えてしまうため０Ｖ以上１０００Ｖ以下がよ
い。特にＩＩ−ＶＩ族化合物半導体の構成元素はイオン
性が高いため、Ｃｔなどのハロゲン元素と化学反応をし
やすく、反応生成物の蒸気圧により物質表面から離脱し
エラチンフカ進行する割合が大きいため、イオンの持つ
エネルギーが小さくてすむ。このため低い引出し電圧で
もエツチング進行し、ＧａＡｓなどの■−Ｖ属化白化合
物半導体べ、ダメージの少ないエツチング達成される。The etching conditions for vertical, smooth, and less damaging etching as described above are as follows. First, regarding gas pressure, if the mean free paths of the ion beam and the neutral particles are about the same, then the etching will have no directivity.
In order to obtain a practical etching speed, lXl0
-3 Pa or more and 1 Pa or less is preferable. Regarding the microwave input power, if the output is too high, the plasma temperature will rise and the electrode will be thermally deformed, and the substrate temperature will also increase due to radiant heat, making temperature control difficult, so it should be 1W or more than 1000W.
The following is good. If the extraction voltage is too high, it will cause great damage to the substrate, so it is preferable that the extraction voltage is 0V or more and 1000V or less. In particular, the constituent elements of Group II-VI compound semiconductors are highly ionic, so they easily chemically react with halogen elements such as Ct, and the vapor pressure of the reaction product causes them to detach from the material surface and form a large proportion of elastin. The energy it has is small. For this reason, etching progresses even at a low extraction voltage, and etching with less damage can be achieved with a -V group white compound semiconductor such as GaAs.
またＩＩ−ＶＩ族化合物半導体の構成元素のハロゲン化
物はほとんど２個のハロゲン元素と結合した反応生成物
を形成する。、例えばＺｎ５ｅのＺｎＳ Ｓｅの塩化物
は、ＺｎＣｌ２．５ｅｃ１２を形成する。これらの反応
生成物は、化学的にはそれほど活性でないため側壁のエ
ツチングを保護する効果がＧａＡｓなとのｍ−ｖ白化合
物半導体に比べ大きく、異方性工・ノチングが強く、垂
直断面を得やすい。In addition, the halides of the constituent elements of the II-VI group compound semiconductor form reaction products that are combined with almost two halogen elements. , for example ZnS Se chloride of Zn5e forms ZnCl2.5ec12. Since these reaction products are not so chemically active, they have a greater effect of protecting sidewalls from etching than m-v white compound semiconductors such as GaAs, have strong anisotropic etching and notching, and are difficult to obtain vertical cross sections. Cheap.
基板温度に関しては８０℃以上では、ＺｎＣ１ｘＳＳ
ｅ Ｃｌｘ、ＴｅＣ１ｘなどの側壁保護膜が蒸発してし
まい、表面で散乱されたイオンにより側面の不均一なエ
ツチング起こり、モホロジーが荒れてしまい適当でない
。また０度以下では、基板温度が周囲温度より低くなり
すぎるため塩素ガスの付着など汚染が大きくなるので適
当ではない。Regarding the substrate temperature, at 80℃ or higher, ZnC1xSS
e The sidewall protective film such as Clx or TeClx evaporates, and ions scattered on the surface cause uneven etching of the sidewalls, resulting in rough morphology, which is not appropriate. Further, below 0 degrees Celsius is not suitable because the substrate temperature becomes too lower than the ambient temperature and contamination such as adhesion of chlorine gas increases.
本実施例においては、Ｉｔ−ＶＩ族化合物半導体として
Ｚｎ５ｅ、ＺｎＳＴｅについて説明を行ったが、ＺｎＳ
Ｓｅ、ＣｄＴｅ等、他のＩＩ−ＶＩ族化合物半導体につ
いても有効である。またエツチングマスクとしてフォト
レジストを用いて説明を行ったが、被エツチング材料に
対して、選択比のとれるもの、例えばＺｎ５ｅを被エツ
チング材料とした場合、Ｓ ｉＯｘＳＳ Ｉ Ｎ ｘな
どの絶縁物、Ｍｏ、Ｎｉなどの金属についても有効であ
る。また、エツチングガスとして、純塩素ガスを用いて
いるが、ハロゲン元素を含むガス、例えばＢＣｌ３、Ｃ
Ｃｌ２Ｆ２、などでもよい。また、発光素子の構造につ
いても端面出射型のものであれば全てに適用される。In this example, Zn5e and ZnSTe were explained as It-VI group compound semiconductors, but ZnS
It is also effective for other II-VI group compound semiconductors such as Se and CdTe. Although the explanation was given using a photoresist as an etching mask, if the etching target material is a material with a good selectivity to the material to be etched, for example, Zn5e, an insulator such as SiOxSSINx, Mo, It is also effective for metals such as Ni. Although pure chlorine gas is used as the etching gas, gases containing halogen elements, such as BCl3, C
Cl2F2, etc. may also be used. Further, the structure of the light emitting element is applicable to all edge-emitting types.
［発明の効果］
以上述べたように、本発明によれば以下の効果が得られ
る。[Effects of the Invention] As described above, according to the present invention, the following effects can be obtained.
（１）ドライプロセスにより共振面の作製を行うため従
来のへき開プロセスに比べ再現性、歩留まりが飛躍的に
向上する。(1) Since the resonant surface is manufactured by a dry process, reproducibility and yield are dramatically improved compared to the conventional cleavage process.
（２）光共振器の共振器長がフォトリソ工程の精度によ
り決まるため、従来の機械的精度に比べ精度が向上し、
微細化も可能となる。(2) Since the resonator length of the optical resonator is determined by the precision of the photolithography process, the precision is improved compared to conventional mechanical precision.
Miniaturization is also possible.
（３）発光素子と電子デバイスのモノリシックな集積が
可能である。(3) Monolithic integration of light emitting elements and electronic devices is possible.
（４）ウェハー単位でのスクリーニングができ製造コス
トの低減となる。(4) Screening can be performed on a wafer basis, reducing manufacturing costs.
第１図は、本発明の一実施例を示す半導体レーザの構造
斜視図。
第２図（ａ） （ｄ）は、第１図の半導体レーザの
作製工程を示した図。
第３図は、本発明の実施例に用いた工・ソチング装置の
構成概略説明図。
・・ｎ型ＧａＡｓ基板
・ｎ型Ｚｎ５ｅ層
・ Ｚｎ５ｘＴｅ＋−ｘ（Ｘ＝Ｏ−
・ｐ型Ｚｎ５ｅ層
・・ｎ型電極
・ｐ陽電極
・・光共振面
・・フォトレジスト
・・Ｔｉ層
拳・フォトレジスト
・・試料準備室
・・エツチング室
３５）層
１３・・・ＥＣＲプラズマ発生室
１４・・・電磁石
１５・・・マイクロ波導波管
１６・・・引出し電極
１７・・・試料
１８・・・ザンブルホルダー
１９・・・マニピュレータ
２０・・・ガス導入部
２１・・・搬送棒
２２・・・排気系
２３・・・排気系
２４・・・ゲートバルブ
以 上
出願人 セイコーエプソン株式会社
代理人 弁理土鈴木裏三部 他１名
弔１図
第３図FIG. 1 is a structural perspective view of a semiconductor laser showing an embodiment of the present invention. 2(a) and 2(d) are diagrams showing the manufacturing process of the semiconductor laser of FIG. 1. FIG. 3 is a schematic explanatory diagram of the configuration of the machining/sawching device used in the embodiment of the present invention. ...N-type GaAs substrate, n-type Zn5e layer, Zn5xTe+-x (X=O-, p-type Zn5e layer, n-type electrode, p-positive electrode, optical resonance surface, photoresist, Ti layer, photo Resist...Sample preparation room...Etching chamber 35) Layer 13...ECR plasma generation chamber 14...Electromagnet 15...Microwave waveguide 16...Extraction electrode 17...Sample 18...Zan Bull holder 19...Manipulator 20...Gas introduction section 21...Transport rod 22...Exhaust system 23...Exhaust system 24...Gate valve and above Applicant: Seiko Epson Co., Ltd. Agent Patent Office Suzuki Urasanbu and 1 other person Funeral 1 Figure 3
Claims (7)
製造方法において、光共振器面は、エッチングマスクを
形成する工程と、反応性ガスを放電室分離型のマイクロ
波励起・ＥＣＲプラズマ室で活性化させ、被処理材料に
一様な方向を持ったイオンビームを照射することにより
ドライエッチングを行う工程により形成することを特徴
とするII−VI族化合物半導体発光素子の製造方法。(1) In the method for manufacturing a semiconductor light emitting device made of a II-VI group compound semiconductor, the optical resonator surface is formed in a step of forming an etching mask and a step of removing a reactive gas in a microwave excitation/ECR plasma chamber with a separate discharge chamber. 1. A method for manufacturing a II-VI group compound semiconductor light emitting device, characterized in that it is formed by dry etching by activating and irradiating a material to be processed with an ion beam having a uniform direction.
、シリコン酸化物、シリコン窒化物などの絶縁物、モリ
ブデン、ニッケルなどの金属であることを特徴とする請
求項１記載のII−VI族化合物半導体発光素子の製造方法
。(2) The material of the etching mask is a photoresist, an insulator such as silicon oxide or silicon nitride, or a metal such as molybdenum or nickel. Method of manufacturing elements.
むことを特徴とする請求項１記載のII−VI族化合物半導
体発光素子の製造方法。(3) The method for manufacturing a II-VI group compound semiconductor light emitting device according to claim 1, wherein the reactive gas contains at least a halogen element.
から１Ｐａの範囲であることを特徴とする請求項１記載
のII−VI族化合物半導体発光素子の製造方法。(4) The pressure of the reactive gas is 5×10^-^3Pa
2. The method for manufacturing a II-VI group compound semiconductor light emitting device according to claim 1, wherein the pressure is in a range of from 1 Pa to 1 Pa.
囲であることを特徴とする請求項１記載のII−VI族化合
物半導体発光素子の製造方法。(5) The method for manufacturing a II-VI group compound semiconductor light emitting device according to claim 1, wherein the microwave input power is in a range of 1 W or more and 1 kW or less.
出すための電圧は、０Ｖ以上１ｋＶ以下の範囲であるこ
とを特徴とする請求項１記載のII−VI族化合物半導体発
光素子の製造方法。(6) The method for manufacturing a II-VI group compound semiconductor light emitting device according to claim 1, wherein the voltage for drawing the ion beam from the discharge chamber to the material to be processed is in a range of 0 V or more and 1 kV or less.
０℃以下であることを特徴とするII−VI族化合物半導体
発光素子の製造方法。(7) The temperature of the material to be processed during etching is 0℃ or higher8
1. A method for manufacturing a II-VI compound semiconductor light emitting device, characterized in that the temperature is 0° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2148094A JP2964553B2 (en) | 1990-06-06 | 1990-06-06 | Method for manufacturing semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2148094A JP2964553B2 (en) | 1990-06-06 | 1990-06-06 | Method for manufacturing semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0442984A true JPH0442984A (en) | 1992-02-13 |
| JP2964553B2 JP2964553B2 (en) | 1999-10-18 |
Family
ID=15445109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2148094A Expired - Fee Related JP2964553B2 (en) | 1990-06-06 | 1990-06-06 | Method for manufacturing semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2964553B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6750151B2 (en) | 2000-12-27 | 2004-06-15 | Sumitomo Electric Industries, Ltd. | Etching method for ZnSe polycrystalline substrate |
-
1990
- 1990-06-06 JP JP2148094A patent/JP2964553B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6750151B2 (en) | 2000-12-27 | 2004-06-15 | Sumitomo Electric Industries, Ltd. | Etching method for ZnSe polycrystalline substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2964553B2 (en) | 1999-10-18 |
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