JPH0443225B2 - - Google Patents
Info
- Publication number
- JPH0443225B2 JPH0443225B2 JP27613784A JP27613784A JPH0443225B2 JP H0443225 B2 JPH0443225 B2 JP H0443225B2 JP 27613784 A JP27613784 A JP 27613784A JP 27613784 A JP27613784 A JP 27613784A JP H0443225 B2 JPH0443225 B2 JP H0443225B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- envelope
- sensitive element
- case
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000002123 temporal effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
- G01L19/0645—Protection against aggressive medium in general using isolation membranes, specially adapted for protection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、圧力を電気信号に変換する半導体感
圧素子を有する圧力変換器に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a pressure transducer having a semiconductor pressure-sensitive element that converts pressure into an electrical signal.
この種の圧力変換器は第３図に示すように構成
されている。
This type of pressure transducer is constructed as shown in FIG.
１は中心部が肉薄に形成された半導体感圧素子
で、その一面には拡散によつて複数のピエゾ抵抗
層２が形成されている。また、この半導体感圧素
子１は、中心に導圧孔を有する環状部材３及びこ
の環状部材３の導圧孔と連通する導圧孔を有する
筒状部材４とからなる支持部材に支持されてい
る。この筒状部材４は、断面コ字状の外囲器５に
形成された孔部に貫通支持されている。この外囲
器５と筒状部材４との間には絶縁部材６が介在さ
れている。７はワイヤ、８はリード線、９は外囲
器５内を通すリード線８の絶縁を保持する絶縁
層、１０は導圧孔を有する環状のカバーである。 Reference numeral 1 denotes a semiconductor pressure-sensitive element having a thin center portion, and a plurality of piezoresistive layers 2 are formed on one surface of the element by diffusion. The semiconductor pressure-sensitive element 1 is supported by a support member consisting of an annular member 3 having a pressure-guiding hole in the center and a cylindrical member 4 having a pressure-guiding hole communicating with the pressure-guiding hole of the annular member 3. There is. This cylindrical member 4 is supported through a hole formed in an envelope 5 having a U-shaped cross section. An insulating member 6 is interposed between the envelope 5 and the cylindrical member 4. 7 is a wire, 8 is a lead wire, 9 is an insulating layer that maintains the insulation of the lead wire 8 passing through the envelope 5, and 10 is an annular cover having a pressure conducting hole.
さらに、この外囲器５は、ケース１１に取着さ
れている。このケース１１には、受圧ダイアフラ
ム１２が取着されており、この受圧ダイアフラム
１２、ケース１１、外囲器５、支持部材及び半導
体感圧素子１により形成された空間には、圧力伝
達媒体１３が封入されている。なお、１４は、プ
リント配線板であつて、前記ピエゾ抵抗層２から
の電気信号をワイヤ７、リード線８を通して受け
取つて必要な信号処理を行つて外部に出力する電
気信号出力部を構成している。 Furthermore, this envelope 5 is attached to a case 11. A pressure receiving diaphragm 12 is attached to the case 11, and a pressure transmitting medium 13 is in the space formed by the pressure receiving diaphragm 12, the case 11, the envelope 5, the support member, and the semiconductor pressure sensitive element 1. It is enclosed. Reference numeral 14 denotes a printed wiring board, which constitutes an electrical signal output section that receives electrical signals from the piezoresistive layer 2 through wires 7 and lead wires 8, performs necessary signal processing, and outputs the processed signals to the outside. There is.
第４図は、このように構成された圧力変換器の
回路構成を示すもので、１６，１７は前記ピエゾ
抵抗層２を示している。この抵抗１６，１７はダ
ミー抵抗１８，１９とによりホイートストンブリ
ツジ回路を形成している。この抵抗１６とダミー
抵抗１８との接続点及び抵抗１７とダミー抵抗１
９との接続点には、入力電圧VINが供給されてい
る。また、抵抗１６，１７の接続点及びダミー抵
抗１８，１９の接続点からは、出力電力VOUTが
取出される。この入力電圧VINの供給及び出力電
圧VOUT信号処理は、外部の信号処理回路により
行なわれるため、回路構成によつてはブリツジ回
路とアース間に電圧Vcが印加される。 FIG. 4 shows the circuit configuration of the pressure transducer constructed in this way, and 16 and 17 indicate the piezoresistive layer 2. These resistors 16 and 17 and dummy resistors 18 and 19 form a Wheatstone bridge circuit. The connection point between this resistor 16 and dummy resistor 18 and the resistor 17 and dummy resistor 1
The input voltage V IN is supplied to the connection point with 9. Further, the output power V OUT is extracted from the connection point between the resistors 16 and 17 and the connection point between the dummy resistors 18 and 19. The supply of the input voltage V IN and the signal processing of the output voltage V OUT are performed by an external signal processing circuit, so depending on the circuit configuration, the voltage Vc is applied between the bridge circuit and the ground.
このように構成され、前記受圧ダイアフラムに
被測定圧力Ｐが印加されると、圧力伝達媒体１３
を介し前記半導体感圧素子１に被測定圧力Ｐが加
えられる。そして、この被測定圧力Ｐに応じて、
例えば前記抵抗１６はその抵抗値を増大させ、抵
抗１７は減少させるように変化し、この抵抗値変
化が出力電圧VOUTとして出力され、被測定圧力
Ｐに応じた電気信号が取出される。 With this configuration, when the pressure to be measured P is applied to the pressure receiving diaphragm, the pressure transmission medium 13
A pressure P to be measured is applied to the semiconductor pressure sensitive element 1 via. Then, depending on this measured pressure P,
For example, the resistance value of the resistor 16 increases and the resistance value of the resistor 17 decreases, and this change in resistance value is outputted as an output voltage V OUT , and an electrical signal corresponding to the pressure P to be measured is extracted.
従つて、以上のような圧力変換器においては、
外囲気５及びケース１１が導圧管（図示せず）を
介してアースに接続され、またピエゾ抵抗層２か
らの電流漏洩を防止する観点から、アースより電
圧Vcだけ浮かせた状態でブリツジ回路に入力電
圧VIN印加している。 Therefore, in the above pressure transducer,
The surrounding air 5 and the case 11 are connected to the ground via a pressure conduit (not shown), and from the viewpoint of preventing current leakage from the piezoresistive layer 2, the voltage is input to the bridge circuit with the voltage Vc floating above the ground. Voltage V IN is applied.
ところで、半導体感圧素子１を構成するピエゾ
抵抗層２は圧力伝達媒体１３と接液状態にある
が、この圧力伝達媒体１３は一般の水溶液と同様
に電荷を帯びた原子構造、いわゆるイオン化の状
態にある。その結果、抵抗１６一端側（ダミー抵
抗１８接続側）から抵抗１６他端側（抵抗１７接
続側）にイオン、つまり電荷の移動が起こり、こ
のイオン化現象は時間の経過とともに変化し、こ
れによつて抵抗１６と抵抗１７との接続点の電位
が変化し、ブリツジ回路の出力電圧VOUTが時間
とともに変化する問題がある。 By the way, the piezoresistive layer 2 constituting the semiconductor pressure-sensitive element 1 is in contact with a pressure transmission medium 13, but this pressure transmission medium 13 has a charged atomic structure, a so-called ionized state, like a general aqueous solution. It is in. As a result, ions, or charges, move from one end of the resistor 16 (the side connected to the dummy resistor 18) to the other end of the resistor 16 (the side connected to the resistor 17), and this ionization phenomenon changes over time. Therefore, there is a problem in that the potential at the connection point between the resistors 16 and 17 changes, and the output voltage V OUT of the bridge circuit changes with time.
本発明は上記実情にかんがみてなされたもの
で、圧力伝達媒体のイオン化現象によつて発生す
る電荷を確実に吸収でき、よつてブリツジ回路の
出力電圧の時間的変化を低減化し、測定精度の向
上を図りうる圧力変換器を提供することにある。
The present invention has been made in view of the above circumstances, and is capable of reliably absorbing the electric charge generated by the ionization phenomenon of the pressure transmission medium, thereby reducing temporal changes in the output voltage of the bridge circuit and improving measurement accuracy. An object of the present invention is to provide a pressure transducer that can achieve the following.
本発明は、外囲器を半導体感圧素子を保持する
保持体及びケースから絶縁するとともにこの外囲
器に任意の電位を印加して半導体感圧素子面上に
電荷が蓄積されないように構成し、圧力検出出力
の時間的変化を低減したものである。
The present invention is configured such that the envelope is insulated from the holder and the case that holds the semiconductor pressure-sensitive element, and an arbitrary potential is applied to the envelope so that no charge is accumulated on the surface of the semiconductor pressure-sensitive element. , which reduces temporal changes in pressure detection output.
本発明の一実施例につき第１図及び第２図を参
照して説明する。
An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
２１は環状の半導体感圧素子で、中央部を肉薄
にした断面凹形に形成されている。この半導体感
圧素子２１の平板状面には、ピエゾ抵抗層２２が
拡散により形成されている。このピエゾ抵抗層２
２は、半導体感圧素子２１が受圧してたわんだ状
態で相反する抵抗値変化を示す少なくとも２つ以
上形成されている。また、この半導体感圧素子２
１は、環状部材２３、筒状部材２４からなる保持
体に支持固定されている。この環状部材２３及び
筒状部材２４は、夫々連通する導圧孔を有し、前
記半導体感圧素子２１の凹部側への圧力導入を可
能にしている。また、この筒状部材２４は、環状
の外囲器２５に取着されている。すなわち、この
筒状部材は、外囲器２５の中心に開孔された孔部
にその孔部を貫通しガラス等の絶縁部材２６によ
り固着されている。 Reference numeral 21 denotes an annular semiconductor pressure-sensitive element, which is formed to have a concave cross section with a thinner central portion. A piezoresistive layer 22 is formed on the flat surface of the semiconductor pressure sensitive element 21 by diffusion. This piezoresistive layer 2
2, at least two semiconductor pressure-sensitive elements 21 are formed which exhibit contradictory changes in resistance value when the semiconductor pressure-sensitive element 21 receives pressure and is bent. Moreover, this semiconductor pressure sensitive element 2
1 is supported and fixed to a holder consisting of an annular member 23 and a cylindrical member 24. The annular member 23 and the cylindrical member 24 each have a pressure-conducting hole that communicates with them, making it possible to introduce pressure into the recessed portion of the semiconductor pressure-sensitive element 21. Further, this cylindrical member 24 is attached to an annular envelope 25. That is, this cylindrical member passes through a hole formed in the center of the envelope 25 and is fixed by an insulating member 26 such as glass.
また、この外囲器２５は、その外縁部には、軸
方向に貫通してリード線２８が絶縁層２９により
固着されている。こリード線２８の一端は、前記
ピエゾ抵抗層２２にワイヤ２７を介して接続され
ている。また、他端は、印刷配線板３０に取着さ
れている。 Furthermore, a lead wire 28 is fixed to the outer edge of the envelope 25 through an insulating layer 29, passing through it in the axial direction. One end of this lead wire 28 is connected to the piezoresistive layer 22 via a wire 27. Further, the other end is attached to a printed wiring board 30.
また、この外囲器２５は、環状の絶縁材よりな
る接続部材３１を介して筒状のケース３２に取着
されている。このケース３２、接続部材３１、外
囲器２５、支持部材及び半導体感圧素子２１はす
べて同心的に接続されている。また、ケース３２
の一方の開口は、受圧ダイヤフラム３３により閉
塞されている。この受圧ダイアフラム３３、ケー
ス３２、接続部材３１、支持部材及び半導体感圧
素子２１とにより密閉された空間が形成され、そ
の空間内には圧力伝達媒体３４が封入されてい
る。 Further, this envelope 25 is attached to a cylindrical case 32 via a connecting member 31 made of an annular insulating material. The case 32, the connecting member 31, the envelope 25, the supporting member, and the semiconductor pressure-sensitive element 21 are all concentrically connected. Also, case 32
One opening is closed by a pressure receiving diaphragm 33. The pressure-receiving diaphragm 33, the case 32, the connecting member 31, the support member, and the semiconductor pressure-sensitive element 21 form a sealed space, and a pressure transmission medium 34 is enclosed within the space.
また、前記外囲器２５には、前記印刷配線板３
０の任意の電位点に接続されたリード線３６が接
続されている。すなわち、この外囲器２５は、筒
状部材２４からは絶縁部材２６により、リード線
２８からは絶縁層２９により、またケース３２か
らは接続部材３１により絶縁された状態で任意の
電位に保持されている。 The envelope 25 also includes the printed wiring board 3.
A lead wire 36 connected to an arbitrary potential point of 0 is connected. That is, the envelope 25 is held at an arbitrary potential while being insulated from the cylindrical member 24 by the insulating member 26, from the lead wire 28 by the insulating layer 29, and from the case 32 by the connecting member 31. ing.
なお、図中３５は前記外囲器２５に取着された
カバーである。このカバー３５を導電材料で形成
することにより、前記感圧素子２１は任意の所定
電位となるカバー３５及び外囲器２５で囲まれた
空間内に位置することになる。 Note that 35 in the figure is a cover attached to the envelope 25. By forming the cover 35 with a conductive material, the pressure sensitive element 21 is located in a space surrounded by the cover 35 and the envelope 25, which has an arbitrary predetermined potential.
第２図は、このように構成された一実施例の回
路構成を示すもので、抵抗４１，４２は互いに逆
特性を示す前記ピエゾ抵抗層２２を示している。
この抵抗４１，４２は、ダミー抵抗４３，４４と
によりホイートストレブリツジ回路を構成してい
る。この抵抗４１とダミー抵抗４３と接続点Ａ及
び抵抗４２とダミー抵抗４４との接続点Ｂには、
入力電圧VINが供給されている。また、抵抗４
１，４２の接続点Ｃ及びダミー抵抗４３，４４の
接続点Ｄからは出力電圧VOUTが取出される。ま
た、図中Ｅ点は、前記外囲器２５との接続点であ
つて、この接続点Ｅには、前記ブリツジ回路の最
高電位より電按VAだけ高い電圧が印加されてい
る。また、接続点Ｆは、前記ケースとの接続点
で、前記ブリツジ回路との間に電圧Vcが印加さ
れている。 FIG. 2 shows a circuit configuration of an embodiment configured in this manner, and resistors 41 and 42 indicate the piezoresistive layer 22 having mutually opposite characteristics.
These resistors 41 and 42 and dummy resistors 43 and 44 constitute a wheatstrike circuit. At the connection point A between the resistor 41 and the dummy resistor 43, and at the connection point B between the resistor 42 and the dummy resistor 44,
Input voltage V IN is supplied. Also, resistance 4
The output voltage V OUT is taken out from the connection point C between the resistors 1 and 42 and the connection point D between the dummy resistors 43 and 44. Further, point E in the figure is a connection point with the envelope 25, and a voltage higher than the highest potential of the bridge circuit by an electric voltage V A is applied to this connection point E. Further, a connection point F is a connection point with the case, and a voltage Vc is applied between it and the bridge circuit.
このような構成によれば、受圧ダイアフラム３
３に印加された被測定圧力Ｐは、圧力伝達媒体３
４を介して半導体感圧素子２１のピエゾ抵抗２２
の抵抗値変化として、ワイヤ２７、リード線２８
及び印刷配線板３０を介して外部の信号処理回路
へ供給されて測定される。 According to such a configuration, the pressure receiving diaphragm 3
The measured pressure P applied to the pressure transmission medium 3
4, the piezoresistor 22 of the semiconductor pressure sensitive element 21
As the resistance value changes, wire 27, lead wire 28
The signal is then supplied to an external signal processing circuit via the printed wiring board 30 and measured.
ところで、前記外囲器２５は、筒状部材２４、
リード線２８及びケース３２から絶縁され、かつ
前記ブリツジ回路の最高電位と同じかあるいは高
い電圧VAが印加されているため、圧力伝達媒体
３４のイオン化現象によつて発生する電荷が電圧
VAを通して接続点Ｅに吸収され、半導体感圧素
子２１上の電荷の移動がなくなる。よつて、ブリ
ツジ回路の接続点Ｃの電位が変化することがな
く、半導体感圧素子２１の抵抗値変化のみに依存
する出力電圧VOUTを取り出すことができ、電荷
の蓄積による影響を受けずに正確に被測定圧力を
測定できる。 By the way, the envelope 25 includes the cylindrical member 24,
Since it is insulated from the lead wire 28 and the case 32 and a voltage V A that is the same as or higher than the highest potential of the bridge circuit is applied, the electric charge generated by the ionization phenomenon of the pressure transmission medium 34 becomes a voltage.
The charge is absorbed by the connection point E through V A , and the charge on the semiconductor pressure-sensitive element 21 stops moving. Therefore, the potential at the connection point C of the bridge circuit does not change, and an output voltage V OUT that depends only on changes in the resistance value of the semiconductor pressure-sensitive element 21 can be extracted, without being affected by charge accumulation. The pressure to be measured can be measured accurately.
以上説明したように本発明によれば、圧力伝達
媒体のイオン化現象によつて発生する電荷を確実
に吸収でき、よつてブリツジ回路の出力電圧の時
間的変化を低減化でき、被測定圧力の測定精度を
大幅に向上しうる圧力変換器を提供できる。
As explained above, according to the present invention, it is possible to reliably absorb the charge generated by the ionization phenomenon of the pressure transmission medium, thereby reducing the temporal change in the output voltage of the bridge circuit, and measuring the pressure to be measured. A pressure transducer that can significantly improve accuracy can be provided.
第１図及び第２図は本発明の一実施例を説明す
るためのもので、第１図は構成図、第２図は回路
図、第３図及び第４図は従来の圧力変換器を説明
するためのもので、第３図は構成図、第４図は回
路図である。
２１……半導体感圧素子、２３……環状部材、
２４……筒状部材、２５……外囲器、３１……接
続部材、３２……ケース、３３……受圧ダイアフ
ラム。
Figures 1 and 2 are for explaining one embodiment of the present invention. Figure 1 is a configuration diagram, Figure 2 is a circuit diagram, and Figures 3 and 4 are diagrams of a conventional pressure transducer. For illustrative purposes, FIG. 3 is a configuration diagram and FIG. 4 is a circuit diagram. 21... Semiconductor pressure sensitive element, 23... Annular member,
24... Cylindrical member, 25... Envelope, 31... Connection member, 32... Case, 33... Pressure receiving diaphragm.
Claims (1)
て挿通された導圧孔を有する保持体で半導体感圧
素子を保持する一方、前記外囲器をケースに固定
し、かつ、前記外囲器、半導体感圧素子と受圧ダ
イアフラムとの間で圧力伝達媒体を封ずるように
当該受圧ダイアフラムを前記ケースに張設した圧
力変換器において、 前記外囲器とケースとを絶縁材よりなる接続部
材を介在して絶縁を施すとともに、前記半導体感
圧素子を用いて構成されるブリツジ回路の最高電
位またはこの最高電位よりも高い電圧を前記外囲
器に印加し、前記圧力伝達媒体のイオン化によつ
て生ずる電荷を吸収して前記ブリツジ回路の出力
電圧の変化を低減化することを特徴とする圧力変
換器。[Scope of Claims] 1. A semiconductor pressure-sensitive element is held by a holder having a pressure-conducting hole inserted into a through-hole formed in the envelope via an insulating member, and the envelope is placed in a case. The pressure transducer is fixed, and the pressure receiving diaphragm is stretched over the case so as to seal a pressure transmission medium between the envelope, the semiconductor pressure sensitive element, and the pressure receiving diaphragm, the envelope and the case. and applying insulation to the envelope through a connecting member made of an insulating material, and applying the highest potential of a bridge circuit configured using the semiconductor pressure-sensitive element or a voltage higher than this highest potential to the envelope, A pressure transducer characterized in that the change in the output voltage of the bridge circuit is reduced by absorbing charges generated by ionization of the pressure transmission medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27613784A JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27613784A JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155830A JPS61155830A (en) | 1986-07-15 |
| JPH0443225B2 true JPH0443225B2 (en) | 1992-07-15 |
Family
ID=17565291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27613784A Granted JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155830A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3039934B2 (en) * | 1989-06-13 | 2000-05-08 | コーリン電子株式会社 | Pressure pulse wave detector |
-
1984
- 1984-12-28 JP JP27613784A patent/JPS61155830A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61155830A (en) | 1986-07-15 |
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