JPH0443546A - Discharge electrode - Google Patents
Discharge electrodeInfo
- Publication number
- JPH0443546A JPH0443546A JP15082690A JP15082690A JPH0443546A JP H0443546 A JPH0443546 A JP H0443546A JP 15082690 A JP15082690 A JP 15082690A JP 15082690 A JP15082690 A JP 15082690A JP H0443546 A JPH0443546 A JP H0443546A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode section
- discharge
- semiconductor ceramic
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 229910052573 porcelain Inorganic materials 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 abstract description 8
- 150000002500 ions Chemical class 0.000 abstract description 3
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 230000004927 fusion Effects 0.000 abstract 1
- BQPIGGFYSBELGY-UHFFFAOYSA-N mercury(2+) Chemical compound [Hg+2] BQPIGGFYSBELGY-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- -1 mercury ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Discharge Lamp (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、蛍光灯等に用いられる放電電極に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a discharge electrode used in a fluorescent lamp or the like.
（従来の技術）
従来、蛍光灯等の放電灯は管内に希ガス及び水銀蒸気等
を封入し、低圧気体中の放電現象を利用した放電管で、
特にグロー放電を利用して点灯させる冷陰極放電灯と呼
ばれる放電灯に用いられる電極材料としてはニッケル等
の金属電極が用いられていた。(Prior art) Conventionally, discharge lamps such as fluorescent lamps are discharge tubes that are filled with rare gases, mercury vapor, etc., and utilize the phenomenon of discharge in low-pressure gas.
In particular, metal electrodes such as nickel have been used as electrode materials for discharge lamps called cold cathode discharge lamps that are lit using glow discharge.
（発明が解決しようとする課題）
しかしながら、金属電極を用いた放電灯にあっては、電
子の放射性が悪く、したがって放電開始電圧を高くしな
ければならず、また、管電圧か高くなるので消費電力か
高くなるという欠点かあった。(Problem to be Solved by the Invention) However, in discharge lamps using metal electrodes, the radioactivity of electrons is poor, so the discharge starting voltage must be increased, and the tube voltage also increases, so the consumption The drawback was that the electricity was expensive.
本発明は上記事情に鑑みてなされたもので、その目的と
するところは、グロー放電灯による予熱の必要かなく電
子の放射性か良好で、放電開始電圧及び管電圧が低（、
電流密度の大きな且つ消費電力の小さい放電電極を提供
しようとするものである。The present invention has been made in view of the above circumstances, and its objectives are to achieve good electron radioactivity without the need for preheating with a glow discharge lamp, and to have a low discharge starting voltage and tube voltage.
The present invention aims to provide a discharge electrode with high current density and low power consumption.
［発明の構成二：
（課題を解決するための手段）
上記目的を達成するため本発明の放電電極は、アルゴン
ガスを封入したガラス管内に所定間隔をおいて設けられ
たリード線と、これらのリード線の先端部に固定され一
方が開放口となる孔部を有する円筒状の半導体磁器より
なり、この電極部の前記孔部内に塊状または粒状もしく
はスポンジ状の半導体磁器が収納されていることを特徴
とするものである。[Structure 2 of the invention: (Means for solving the problem) In order to achieve the above object, the discharge electrode of the present invention includes lead wires provided at predetermined intervals in a glass tube filled with argon gas, It is made of cylindrical semiconductor porcelain that is fixed to the tip of the lead wire and has a hole with one side open, and that the semiconductor porcelain in the form of lumps, grains, or sponges is housed in the hole of this electrode part. This is a characteristic feature.
（作 用）
上記構成になる本発明の放電電極は、孔部に収納された
塊状または粒状もしくはスポンジ状の半導体磁器から豊
富に電子の放出が行われるとともに、熱容量が太き（な
り且つ熱伝導率を小さくできるので、電子放射が始まる
とともに高温になりやすく安定な温度状態を保つことが
できる。したがって、高温であればあるほど電子の放射
性が良好になることから、豊富な電子を安定して放射し
高い電流密度が得られる。しかしながら、このような塊
状または粒状もしくはスポンジ状の半導体磁器は、水銀
イオン及びアルゴン（Ａｒ）、ネオン（Ｎｅ）、キセノ
ン（Ｘｅ）、クリプトン（Ｋｒ）等の希ガスイオン等の
イオン衝撃に弱く、イオンの衝突によってスパッタリン
グをおこして電子放出特性が劣化する欠点もあるので、
これらの半導体磁器は高融点の半導体磁器または耐スパ
ツタリングの良好な円筒状孔部に収納してイオン衝撃よ
り防止するように構成しである。これにより、電子放射
特性に優れイオン衝撃に対抗力のある放電電極が得られ
る。(Function) The discharge electrode of the present invention having the above structure emits electrons abundantly from the lumpy, granular, or sponge-like semiconductor porcelain housed in the hole, and has a large heat capacity (and thermal conductivity). Since the rate can be made small, it is possible to maintain a stable temperature state where it is easy to reach a high temperature when electron emission starts. Therefore, the higher the temperature, the better the radioactivity of electrons, so it is possible to stabilize the abundance of electrons. However, such bulk, granular, or sponge-like semiconductor porcelain emits mercury ions and rare substances such as argon (Ar), neon (Ne), xenon (Xe), and krypton (Kr). It is vulnerable to ion bombardment from gas ions, etc., and has the disadvantage that ion collisions cause sputtering and deteriorate electron emission characteristics.
These semiconductor porcelains are constructed to be housed in high melting point semiconductor porcelains or in cylindrical holes with good sputtering resistance to prevent ion bombardment. As a result, a discharge electrode with excellent electron emission characteristics and resistance to ion bombardment can be obtained.
（実施例）
以下、本発明の一実施例を第１図乃至第５図によって説
明する。(Example) An example of the present invention will be described below with reference to FIGS. 1 to 5.
第１図は本発明の放電電極を用いた放電管の断面図で、
第２図は放電電極の断面図である。図において１はアル
ゴンガスを封入したガラス管で、２は放電電極である。FIG. 1 is a cross-sectional view of a discharge tube using the discharge electrode of the present invention.
FIG. 2 is a cross-sectional view of the discharge electrode. In the figure, 1 is a glass tube filled with argon gas, and 2 is a discharge electrode.
ガラス管１は断面円筒型の細長い容器で、ガラス管１の
左右側端部にはそれぞれ導体のリード線３が設けてあり
、このリード線３と平行に水銀ゲッター４が設けてあっ
て、ガラス管１内にはアルゴンガス５が所定量封入され
である。前記水銀ゲッター４は一般的な放電灯製造方法
として知られているもので、高周波誘導加熱装置等によ
り加熱することで水銀蒸気をガラス管１内に充満させる
ものである。前記リード線３はガラス管１の外部より内
部へ挿通された導電性材料で形成され、先端部には放電
電極２を取付けるための取付部３ａが設けである。この
取付部３ａは弾性のある導電性材料で形成され放電電極
２の外周を弾性的に挾持するように構成されている。The glass tube 1 is an elongated container with a cylindrical cross section. Conductor lead wires 3 are provided at the left and right ends of the glass tube 1, and a mercury getter 4 is provided parallel to the lead wires 3. A predetermined amount of argon gas 5 is sealed inside the tube 1 . The mercury getter 4 is known as a general discharge lamp manufacturing method, and is used to fill the glass tube 1 with mercury vapor by heating it with a high frequency induction heating device or the like. The lead wire 3 is made of a conductive material and inserted from the outside into the inside of the glass tube 1, and is provided with a mounting portion 3a at its tip to which the discharge electrode 2 is attached. The mounting portion 3a is made of an elastic conductive material and is configured to elastically clamp the outer periphery of the discharge electrode 2.
放電電極２は第２図に示すように、一方か開放口となる
有底円筒状の電極部６と、この電極部６内に挿入収納さ
れる塊状または粒状もしくはスポンジ状の半導体磁器７
とにより構成されている。前記電極部６は高融点又は耐
スパツタリング性の良好な半導体磁器、例えばＢａ （
Ｚｒ、Ｎｂ）０３系の半導体磁器が用いられ、特に磁器
表面上にＮｂ系層を形成してスパッタリング防止層とし
ている。As shown in FIG. 2, the discharge electrode 2 includes a cylindrical electrode portion 6 with an open bottom at one end, and a semiconductor porcelain 7 in the form of a lump, granule, or sponge inserted into the electrode portion 6.
It is composed of. The electrode portion 6 is made of semiconductor porcelain having a high melting point or good sputtering resistance, such as Ba (
A Zr, Nb)03-based semiconductor ceramic is used, and in particular, an Nb-based layer is formed on the surface of the ceramic to serve as a sputtering prevention layer.
このような電極部６の前記有底円筒状の孔部８内に挿入
収納される塊状または粒状もしくはスポンジ状の半導体
磁器７は、電子放射性良好な半導体磁器、例えばＢａＴ
ｉＯ３系半導体磁器の粉末を焼結して塊状または粒状に
したもの、もしくはスポンジ状にしたものを用いる。こ
のＢａＴｉＯ３系半導体磁器は、−電子放射性か良好で
あるが、これを塊状または粒状もしくはスポンジ状にす
ることにより、熱容量を大きくし熱伝導率を小さくする
ことができるので、放電開始と同時により高温で安定な
温度状態を保ち、電流密度も高く取れて安定な放電を行
うことかできる。The lumpy, granular, or sponge-like semiconductor porcelain 7 inserted into the bottomed cylindrical hole 8 of the electrode part 6 is made of semiconductor porcelain with good electron emissivity, such as BaT.
A powder of iO3-based semiconductor porcelain is sintered into a lump or granule, or a sponge. This BaTiO3-based semiconductor porcelain has good -electron emission properties, but by making it into lumps, granules, or sponges, it is possible to increase the heat capacity and reduce the thermal conductivity, so that the temperature increases at the same time as the discharge starts. It is possible to maintain a stable temperature state and obtain a high current density, allowing stable discharge to occur.
一方、放電に伴って発生する水銀イオン等は、対向電極
の方向から電極部６に飛来し、耐スパツタリング性の良
好な半導体磁器の電極部６に衝突するかこの電極部の耐
スパツタリング性良好な電極部により劣化は防止され、
電極部内に収納された半導体磁器７には衝突することな
く豊富な電子放出を継続することができる。On the other hand, mercury ions and the like generated with the discharge fly from the direction of the counter electrode to the electrode part 6 and either collide with the electrode part 6 made of semiconductor porcelain, which has good sputtering resistance, or cause the electrode part to have good sputtering resistance. Deterioration is prevented by the electrode part,
Abundant electron emission can be continued without colliding with the semiconductor ceramic 7 housed in the electrode part.
次に、第３図乃至第５図により本発明の放電電極の実験
結果について述べる。実験にはガラス管径１０ｍｍ、全
長２００ｍｍの放電管で、周波数３０ＫＨｚのＤＣ−Ａ
Ｃインバータにより起動したものである。そして、第３
図は管電流に対する放電開始電圧、第４図は管電流に対
する管電圧、第５図は管電流に対する管電力を示したも
のである。Next, experimental results of the discharge electrode of the present invention will be described with reference to FIGS. 3 to 5. For the experiment, a discharge tube with a glass tube diameter of 10 mm and a total length of 200 mm was used, and a DC-A with a frequency of 30 KHz was used.
It was started by a C inverter. And the third
The figure shows discharge starting voltage versus tube current, FIG. 4 shows tube voltage versus tube current, and FIG. 5 shows tube power versus tube current.
なお、図中Ａは本発明の放電電極、Ｂは従来のニッケル
電極によるものである。Note that in the figure, A is a discharge electrode of the present invention, and B is a conventional nickel electrode.
第３図において、放電電極のものはニッケル電極のもの
に対して放電開始電圧は４００Ｖと５５０Ｖとになり、
１５０Ｖも低いことから電子放射性の優れていることが
判る。In Figure 3, the discharge starting voltage is 400V and 550V for the discharge electrode compared to the nickel electrode.
Since the voltage is as low as 150V, it can be seen that the electron emission property is excellent.
第４図において、放電電極（Ａ）によるものは管電流の
増加とともに管電圧は低下するが、ニッケル電極（Ｂ）
の場合は管電流の増加に対しても一定値を示しており、
管電流２０ｍＡにおいては約１９０Ｖｒｍｓ低下してい
ることが判る。これにより消費量が少ないことが理解さ
れるであろう。In Figure 4, the tube voltage decreases as the tube current increases with the discharge electrode (A), but with the nickel electrode (B)
In the case of , it shows a constant value even when the tube current increases,
It can be seen that when the tube current is 20 mA, the voltage decreases by about 190 Vrms. It will be appreciated that this results in less consumption.
第５図において、放電電極（Ａ）によるものは管電流の
増加に対して管電力の増加率は小さく、ニッケル電極（
Ｂ）によるものは増加率が大であることから、本発明に
係る放電電極の方が省エネルギーであることが判る。In Fig. 5, when using the discharge electrode (A), the rate of increase in tube power is small with respect to the increase in tube current, and the nickel electrode (
Since the increase rate is large in case of B), it can be seen that the discharge electrode according to the present invention is more energy saving.
以上のことから、本発明による放電電極は従来のニッケ
ル電極に比較して、電子放射性が良好で、放電開始電圧
及び管電圧が低く消費電力の小さい放電灯を得ることが
できる。また、予熱の不要な且つ構造上小型化が可能で
あることから管径の細い放電灯を得ることができる。From the above, the discharge electrode according to the present invention has better electron emissivity than the conventional nickel electrode, and can provide a discharge lamp with low discharge starting voltage and tube voltage, and low power consumption. Further, since preheating is not required and the structure can be made compact, a discharge lamp with a small tube diameter can be obtained.
［発明の効果］
以上説明したように本発明の放電電極は、希ガスや水銀
蒸気等を封入したガラス管内に所定間隔をおいて設けら
れたリード線と、このリード線の先端部に固定され一方
が開放口となる孔部を有する円筒状の半導体磁器よりな
り、この電極部の前記孔部内に塊状または粒状もしくは
スポンジ状の半導体磁器を収納したので、グロー放電等
による予熱の必要がなく電子の放射性が優れ、放電開始
電圧及び管電圧が低く、電流密度の大きな且つ消費電力
の小さい省エネルギー化された放ｌｉ電極が得られると
いう利点がある。[Effects of the Invention] As explained above, the discharge electrode of the present invention includes lead wires provided at predetermined intervals in a glass tube filled with rare gas, mercury vapor, etc., and fixed to the tip of the lead wire. It is made of cylindrical semiconductor porcelain with a hole that becomes an open opening on one side, and the block, granular, or sponge-like semiconductor porcelain is housed in the hole of this electrode part, so there is no need for preheating by glow discharge etc. There are advantages in that an energy-saving discharge electrode with excellent radioactivity, low discharge starting voltage and low tube voltage, large current density, and low power consumption can be obtained.
第１図乃至第５図は本発明の一実施例で、第１図は放電
灯の断面図、第２図は放電電極の断面図、第３図は管電
流と放電開始電圧との関係図、第４図は管電流上管電圧
との関係図、第５図は管電流と管電力との関係図である
。
１・・・ガラス管、２・・・放電電極、３・・・リード
線、６・・・電極部、７・・・半導体磁器、８・・・孔
部代理人 弁理士 三 澤 正 義第２図Figures 1 to 5 show an embodiment of the present invention, in which Figure 1 is a cross-sectional view of a discharge lamp, Figure 2 is a cross-sectional view of a discharge electrode, and Figure 3 is a diagram of the relationship between tube current and discharge starting voltage. , FIG. 4 is a diagram showing the relationship between tube current and tube voltage, and FIG. 5 is a diagram showing the relationship between tube current and tube power. DESCRIPTION OF SYMBOLS 1...Glass tube, 2...Discharge electrode, 3...Lead wire, 6...Electrode part, 7...Semiconductor porcelain, 8...Korabe attorney and patent attorney Masayoshi Misawa Figure 2
Claims (1)
定間隔をおいて設けられたリード線と、これらのリード
線の先端部に固定され一方が開放口となる孔部を有する
円筒状の半導体磁器よりなり、この電極部の前記孔部内
には塊状または粒状もしくはスポンジ状の半導体磁器が
収納されていることを特徴とする放電電極。A cylindrical semiconductor porcelain that has lead wires installed at predetermined intervals in a glass tube filled with rare gas and/or mercury vapor, etc., and a hole that is fixed to the tip of these lead wires and has an open opening on one side. A discharge electrode characterized in that a block-like, granular-like, or sponge-like semiconductor porcelain is housed in the hole of the electrode part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15082690A JP2881479B2 (en) | 1990-06-08 | 1990-06-08 | Discharge electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15082690A JP2881479B2 (en) | 1990-06-08 | 1990-06-08 | Discharge electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0443546A true JPH0443546A (en) | 1992-02-13 |
| JP2881479B2 JP2881479B2 (en) | 1999-04-12 |
Family
ID=15505249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15082690A Expired - Fee Related JP2881479B2 (en) | 1990-06-08 | 1990-06-08 | Discharge electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2881479B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06267404A (en) * | 1993-03-17 | 1994-09-22 | Tdk Corp | Electrode material, manufacture thereof, and electrode |
| JPH06302297A (en) * | 1993-04-14 | 1994-10-28 | Tdk Corp | Discharge lamp electrode |
| JPH06302298A (en) * | 1993-04-14 | 1994-10-28 | Tdk Corp | Discharge lamp electrode |
| EP0803898A3 (en) * | 1996-04-24 | 1997-12-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Discharge lamp electrode |
| US6172453B1 (en) * | 1993-03-17 | 2001-01-09 | Tdk Corporation | Discharge lamp electrode |
| US6383416B1 (en) | 1999-03-12 | 2002-05-07 | Tdk Corporation | Electron-emitting material and preparing process |
| US6432325B1 (en) | 1999-03-19 | 2002-08-13 | Tdk Corporation | Electrode |
-
1990
- 1990-06-08 JP JP15082690A patent/JP2881479B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06267404A (en) * | 1993-03-17 | 1994-09-22 | Tdk Corp | Electrode material, manufacture thereof, and electrode |
| US6172453B1 (en) * | 1993-03-17 | 2001-01-09 | Tdk Corporation | Discharge lamp electrode |
| JPH06302297A (en) * | 1993-04-14 | 1994-10-28 | Tdk Corp | Discharge lamp electrode |
| JPH06302298A (en) * | 1993-04-14 | 1994-10-28 | Tdk Corp | Discharge lamp electrode |
| EP0803898A3 (en) * | 1996-04-24 | 1997-12-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Discharge lamp electrode |
| US6383416B1 (en) | 1999-03-12 | 2002-05-07 | Tdk Corporation | Electron-emitting material and preparing process |
| US6432325B1 (en) | 1999-03-19 | 2002-08-13 | Tdk Corporation | Electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2881479B2 (en) | 1999-04-12 |
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