JPH0444362A - Organic quantum semiconductor and quantum semiconductor element - Google Patents

Abstract

PURPOSE:To realize the non-Neumann type architecture of superparallel, superdispersion, and superinformation density by stacking two kinds of organic semiconductor layers different in hand gap for one cycle in fixed stacking order into multiwell structure of superthin films. CONSTITUTION:An organic semiconductor material is made into a superthin film tens to hundreds of Angstrom thick so as to get needed enough anisotropy, and inside the film, a one-directional superlattice is realized. The organic semiconductor materials are molecular crystals, and are stacked in the direction of the crystal axis (b-axis). Nine molecules 102 are stacked to constitute one column 104, and four columns are formed. Since the axial interval a of each molecule is very close by about several Angstrom , quantum effect in the mezzo-scopic region occurs, and a quantum wire 105 is constituted, and the axial shift of electrons becomes easy by the electric and optical anisotropy and quantum semiconductor effect. A second film is provided on the primary structure superlattice 101. A heterojunction layer 204 is formed at the interface between the first film and the second film. In the case of having used an organic semiconductor for the second film, a multiquantum well having Schottky junction properties is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a mesoscopic semiconductor material having a multiple quantum well structure and a semiconductor device using the same.

(Prior Art and Problems to be Solved by the Invention) Conventional main semiconductors include inorganic semiconductors using Si, GaAs, and the like.

In the inorganic semiconductor, atoms form a regular three-dimensional lattice to constitute a crystal. For this reason, the energy band of a semiconductor is widely distributed over two or three dimensions, and when carriers travel through a crystal, only wave packets with large dispersion can propagate. In other words, carrier mobility and lifetime are limited. This means that when the element is configured,
This results in deterioration of the S/N, frequency characteristics, switching characteristics, etc. of the element. In order to solve this problem, inorganic semiconductors, particularly quantum semiconductors such as GaAs/GaAlAs, are being considered. This is a so-called quantum well structure, which uses a method of stacking ultra-thin semiconductor crystals with dimensions that allow quantum size effects to be obtained. The existence of the quantum well structure itself has been confirmed both theoretically and experimentally. However, it has not yet been possible to actually localize the energy band in which carriers propagate using the quantum well structure. In addition, when quantum wires and quantum dots attempt to realize the well structure in a lower dimension, the deviation from the theoretical value of the well structure due to the crystallinity specific to inorganic semiconductors cannot be ignored, and the quantum wires and quantum dots is difficult to realize.

Furthermore, from the perspective of semiconductor devices, inorganic semiconductors include p-n junction bipolar devices, MOS type (M
etal Oxide Sem1conductor
Type) element can be mentioned.

These devices are basically three terminals (eg, emitter, base, collector) and require wiring in addition to the device itself. Although alloys such as Al-Cu are used for wiring to reduce resistance and improve migration resistance, many three-terminal elements are integrated, so-called LSl and ULSI
When trying to do this, the ratio of the wiring area to the chip area becomes a problem. This is to prevent wiring resistance, unavoidable stray (parasitic) capacitance between elements, and heat accumulation within the elements. Taking bipolar LSI/ULSI as an example, in order to operate an element at high speed, it is necessary to reduce the size of the element or pass a large amount of current to generate a strong electric field or large current density within the element. There is a need. At the same time, in LSI elements, the thickness of the wiring needs to be 1 to 2 m or less due to the passivation film, etc. Therefore, when trying to obtain the electric field or current density, the width of the wiring needs to be widened. There is. For this reason, there is a lower limit to the area occupied by the wiring within the chip. Specifically, 50-70% of the chip
is occupied by the wiring area. Furthermore, in high-speed LSIs, with the increase in electric field or large current density (e.g. ECL), energy consumption within the elements (eventually converted to heat) becomes a problem. ), it is necessary to separate the elements to some extent, which leads to an increase in wiring length (area) and hinders LSI implementation.

Similarly, in order to prevent intra-element interference caused by the stray (parasitic) capacitance, it is necessary to isolate the elements to some extent (separate the elements). Therefore, an increase in the wiring length (area) is unavoidable. At the same time, an increase in wiring length, wiring resistance, and stray (parasitic) capacitance causes an increase in the CR time constant between elements, which hinders the above-mentioned speed increase.

As described above, wiring length (area), stray (parasitic) capacitance, and heat storage within the device are problems in increasing the speed of LSI/ULSI devices.

Furthermore, this problem is not solved even in the quantum semiconductor of the inorganic semiconductor mentioned above. Device dimensions on the nanometer scale are effective in increasing device speed, but conversely, stray capacitance increases. Furthermore, it is thought that the wiring area within the chip will further increase.

The above are the problems with conventional semiconductors and devices using them.

Next, problems in LSI architectures using conventional semiconductor elements (three-terminal elements) such as R will be described using switching (digital) elements, which are currently mainstream, as an example. The information space that the switching element can handle is a binary information space (0, 1), and n-b
If we take the data structure of it, the information space is (0,1)n
becomes. Such an information space is highly robust, has a simple logical structure, and is easy to handle. Moreover, the characteristics required of the semiconductor element are also simple. However, on the other hand, higher-order information processing
For example, when trying to realize the processes that occur in the brain, such as learning and memory, the required information space is extremely dense (-analog level), so it must be expressed in the binary information space mentioned above. To do so, n would have to be increased significantly (theoretically -), which is not realistic. Such low density of information space causes problems such as an increase in the number of data buses, an increase in data transfer time, and an increase in the frequency of communication between elements when data is exchanged (communication) between elements. This causes problems in the LSI that processes information, such as an increase in communication costs relative to information processing capacity (decreased information processing ability) and an increase in energy consumed for communication.

Furthermore, information devices (CPU, MPU
We will discuss the problems in the configuration (architecture) of ). The current information element architecture is CPU/MPU (processing unit) + register (-time storage unit)
+Memory (Input storage unit has a serial configuration. This is the same configuration inside the CPU/MPU. Information processing is basically concentrated in one processing unit; The temporary storage section connected through the data bus is used less frequently despite the large number of elements occupying the LSI.Furthermore, in the secondary storage section, where the number of elements occupying the LSI is 3 to 5 digits or more, the number of elements is low. Contrary to the large number of information, only one to one reference is made for each information processing by the processing unit.
This is about 10 times, and is mostly in a dormant state, for example, with a usage frequency of 10-61 seconds. Parallel processing processors (vibration, array) are currently being proposed as a solution to this problem, but since the information element architecture used is basically a serial configuration, they are effectively limited to the range of serial processing. The situation has not been resolved and the problem has not been resolved. The organic quantum semiconductors we provide are massively parallel, hyperdistributed, and hyperinformational devices that solve the problems of the conventional semiconductor information processing devices (LSIs) mentioned above, as well as the Neumann information processing theory that uses them. This enables information devices to realize dense non-Neumann architecture.

Furthermore, this organic quantum semiconductor device provides the above-mentioned high-order information processing means based on a non-Neumann architecture.

(Means for Solving the Problems) In order to solve such conventional head closure, the means proposed in the present invention are shown below.

It is composed of at least two types of organic semiconductor layers each having a different band gap, and the plurality of semiconductor layers are laminated in an ultra-thin film structure for at least one period in a certain lamination order, and a multi-well structure in which a plurality of quantum wells are laminated. Organic quantum semiconductor with structure.

(2) In at least one period of the multiple quantum well structure, a tunnel structure, a semiconductor band structure, an elementary exciton structure,
The organic quantum semiconductor according to claim 1, having at least one of a superconducting structure, a quantum Hall structure, a resonance structure, a quantum confinement structure, a Peter structure, and a Crohn-Blockade structure Schottky structure. .

(3) Claim 1 or 2g, wherein the organic semiconductor comprises at least one of a one-dimensional electrical conductor, a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional photoconductor, or a two-dimensional photoconductor. Own organic molecular semiconductor as MOS
A quantum semiconductor device characterized in that at least one of a source layer, a drain layer, or a channel layer of a FET structure is oriented in a direction along a gate electric field.

(4) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electric conductor, a two-dimensional electric conductor, a one-dimensional optical semiconductor, and a two-dimensional photoconductor. A quantum semiconductor device characterized in that the gate layer of the structure is oriented in a direction perpendicular to the gate electric field.

(5) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device characterized by being oriented in a direction along an applied electric field.

(6) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device, characterized in that at least one of a base layer, an emitter layer, or a collector layer is oriented along an electric field applied between an emitter and a collector.

(7) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device characterized by having a base layer oriented perpendicular to an electric field applied between an emitter and a collector.

(Function) As mentioned above, the organic quantum semiconductors we provide are massively parallel,
Super dispersion and super information density are what realize information elements.

The effects of organic quantum semiconductors that achieve these functions will be described below.

The first characteristic of organic semiconductors compared to inorganic semiconductors is their crystal structure. Since organic semiconductor materials are molecular crystals, they can achieve greater electrical and optical anisotropy than inorganic semiconductors. In order to obtain the necessary and sufficient anisotropy, we made an ultra-thin film of several tens to hundreds of organic semiconductor materials and realized a one-dimensional superlattice (ID Superlattice) within the thin film.

The −dimensional superlattice structure is shown in FIG. The organic semiconductor material is the molecular crystal and can be stacked in a column shape by laminating them in the b-axis direction as shown in FIG. In the superlattice in FIG.
Molecule 102 stacks 9 molecules to form one column 104
This figure shows that four such columns are formed. When the molecules 102 are stacked in such a column configuration 104, a quantum effect occurs in the mesoscopic region because the axial distance a between each molecule is very close to about several people. The electron systems of each molecule 102 overlap, π
It is estimated that a quantum tunneling effect occurs due to the mixing of electronic wave functions, and a conjugate electron activation is formed in the column 104 as a whole. One adjacent column 104
Because the distance between the columns is more than 75flOÅ,
Quantum effects such as those described above do not occur, and mutually beneficial electron activation is not established.

That is, in the one-dimensional structure superlattice 101 in FIG.
A quantum wire 105 is constructed by stacking 02 in a column 104, and electrons can easily move in the axial direction due to electrical/optical anisotropy and quantum semiconductor effects.

Next, a second thin film is provided on the -dimensional structure superlattice 101 (next stage). The situation is shown in Figure 2. Metals, organic semiconductors, organic conductors, etc. are used as the timber. A heterojunction layer 204 is formed at the interface between the first thin film and the second thin film. When an organic semiconductor is used for the second thin film, quantum wires 105 are constructed by stacking molecules 102 in columns 104 in Schottky junction characteristics, that is, in the one-dimensional structure superlattice 101 in FIG. Anisotropy and quantum semiconductor effects facilitate electron movement in the axial direction.

Next, a second thin film is provided on the -dimensional structure superlattice 101 (next stage). Figure 2 shows the situation. As the material, metals, organic semiconductors, organic conductors, etc. are used. A heterojunction layer 204 is formed at the interface between the first thin film and the second thin film. When an organic semiconductor is used for the second thin film, it is possible to form a multiple quantum well (MQW) with Schottky junction characteristics.
ti Quantum Well) is formed.

The -th thin film has a one-dimensional structure superlattice 101 as described above. Similarly, when molecules 203 are used in the second thin film, a superlattice 201 is formed. The orientation of the organic semiconductor molecules in the superlattice 201 corresponds to the -dimensional structure superlattice 1.
You can also make it the same as 01. Further, by selecting the molecular structure of the organic semiconductor and the dopant material, two-dimensional curliness can be added to the two-dimensional structure. These are combined as appropriate depending on the required information processing function.

FIG. 3 is a diagram showing an example of the energy band structure of MQW in a heterojunction between superlattice 101 and superlattice 201. The energy gap Eg1 indicates the energy difference between the filled band and the conduction band of the conjugated electron system in the superlattice 101. In exactly the same way, Eg2 also shows the energy difference between bands in the superlattice 201. If the functions for each output of the conduction band and the filling band of the superlattice are each ΦC2ΦV, then Φ. 2〉Φ. 1. ΦC in the superlattice 101.201 so as to satisfy Φv1〉Φ battle.
It is necessary to adjust 1ΦV. In addition, here Φ. 1 and Φ
v1 is Φ of the superlattice 101. and Φ7. The same interpretation applies to Φc2 and Φv2.

Also, in the figure, the height of the wall in the conduction band in the Peter structure is ΔEc, which is given by ΔEcχΦd−Φc1. Similarly, the height of the wall at the filling zone is ΔEv, given by ΔEv−=Φv1−Φv2.

Also, LB is the thickness of the superlattice 201, and Lw is the thickness of the superlattice 10.
The thickness is 1.

In the MQW structure shown in FIG. 3, the superlattice 101 is a well, and the superlattice 201 is a wall. By applying an electric field to the damaged MQW, the MQW structure can be tilted as shown in the figure. FIG. 4 explains carrier propagation in the MQW. Normal MQ
The localized state of charge when no external electric field is applied to W is shown in FIG. 2(a). In FIG. 4(a), an information carrier 402 can be localized within a well 404. This can be achieved by quantum wave dynamically matching the dimensions of the well and the subbands formed within the well with the waves of the wavenumber packet of the information carrier.

FIG. 4(b) explains the transfer of the information carrier 402 to an adjacent well. By applying an electric field to the MQW structure shown in the figure, a lateral energy state as shown in the figure can be formed. By appropriately selecting the electric field, that is, by generating a quantum potential difference in each subband 405 formed in each well 404, the information carrier 402 can be transferred to the adjacent well by the tunnel ring 406. can do.

Molecules 102 and 1 forming such an organic semiconductor layer
The material used for 03 is a known organic semiconductor material, such as Organic Semiconductors (F.

Gutmann et al., R.E., Krieger Publishing 19
81) Organisoku Semiconductors (H, Meie
rVerlag Chemie 1974) Phtha
locyamines(C,C,Lezuoff(也V
CHPublishers The Phthalocyanines (F,
H, Mo5er and other CRC Press Coordina
Compounds of Porphy
tins and Phthalocyanines (B
, D. Berzin John Wiley 19
81) Molecular Crystals and
Molecules (KITaigorodskyA
Cadenic Press 1973 Electr
ical Transport in 5oleds (
Kao et al. Pergawon Conduitive Po
lymers (R, Seymour Plenum P
resElectronic process in
Organic crystals (M, Pope
OthersOxford Press1982) Organic Molecular Crystal
s(E, A, 5Ilish Springer, etc.) may be used as appropriate depending on the purpose.

In addition to the above-mentioned known examples of organic semiconductors, the material of 201 is (
It can also be obtained by doping with ionic materials (such as iodine), complex-forming materials, etc. Further, it is possible to appropriately select from organic conductive materials, inorganic thin films, etc. known to the above-mentioned documents to form a heterojunction. Also, various compatible materials may be used in combination for the contact interface layer, barrier layer, implanted epitaxy substrate layer, etc.

As for the ability to form a thin film, there are various known methods such as dry processes such as vacuum evaporation, ion blating, sputtering and MBE, and wet processes such as casting and LB, which may be used as appropriate.

In addition, the thickness LW of the superlattice 101 is the length at which quantum wires are formed, and is approximately 20 to 100. In the vicinity of 00, Lw is the same as the mean free path in the conductor band formed by the π electron system. This is because very high electron mobility can be obtained.

Next, a second superlattice 201 using organic semiconductor molecules 203
However, it is preferable to use an organic semiconductor material of the same type as the superlattice 101 and to further perform physical modification or chemical modification by doping. This results in 101 and 2
This is because it becomes easy to make the 01 axes continuous. The semiconductor becomes possible to design the work function φ of each layer, the lattice constant energy gap Eg, ΔEo in the conduction band, ΔEv in the filling zone, etc. For example, when LW has the same thickness as LB and superlattice 201 has the same quantum wire 105 structure as superlattice 101, ΔEo: 10 to 100 meV, ΔEv: 10-5
00 eV, E,2; 500 to 000 eV, and the multi-well (MQW) can be formed.

A semiconductor forming such a multiple quantum well can be applied to any known semiconductor device. For example, in the operation mode, unipolar, bipolar, thyristor, photovoltaic, photoconductive, optical nonlinear, etc. conventional Si, Ge, GaA
A variety of optoelectronic operating modes are possible that have been considered for inorganic semiconductors such as S. Also, as an element structure, MOSFET
Structure, Schottky structure heterostructure, MQW structure, transistor structure, FET structure, photodiode structure, phototransistor structure, structure of hetero bipolar transistor, resonant tunnel diode structure, hot electron transistor structure, resonant tunnel transistor structure, superlattice hetero Structure avalanche first diode structure,
Conventional optical resonant etalon structures, etc., are made of Si, Ge.

Various structures considered for inorganic semiconductors such as GaAs are possible.

This organic semiconductor has multiple quantum wells and can further form quantum wires and quantum dots with column structures. When such an MQW structured quantum wire is used, information carriers (electrons/holes) can be transmitted and calculations can be performed. That is, one MQW quantum wire described above corresponds to one independent information processing unit (specifically, one transistor). In the MQW structure of the present invention, the -dimensional structure superlattice 101 mainly performs transmission and latching (memory) of information carriers, and the superlattice 201 allows calculation of information carriers.

Therefore, as mentioned above, the electrical wiring that is essential to LSIs using conventional Si and GaAs three-terminal transistors is completely unnecessary. Furthermore, regarding the dimensions of the device unit,
Compared to transistors using superlattice thin films of Si or GaAs, an extremely small information processing unit of the same size (1000 people) or less can be formed. When 20 to 1000 information processing units are formed in super parallel at a pitch, the element density will be approximately 1018 to 1012 units per square meter, which is 106 to 104 times the degree of integration compared to conventional LSI. In addition to its ultra-high density and ultra-parallel structure, this device can also perform brain nerve calculations within the device. For example, a Makarosoku-Bitz model is realized in the superlattice 201 as an operation. In other words, when focusing on a certain quantum wire in the superlattice 201, for a group of information carriers transmitted from the superlattice 101 in the previous stage, this quantum is divided into information carriers directly transmitted to the wire and quantum wires in the n vicinity of the quantum wire. interactions with the amount of information carriers are added.

(Example 1) FIG. 5 shows an example of the quantum wire. In this embodiment, phthalocyanine molecules 503 are stacked along the direction perpendicular to the substrate 502 (b-axis). In this example, MBE and ALE equipment are used, and the vacuum degree is 10-8 to 1O.
-10Torr, 1°A at substrate temperature 200-300°C
About 30 layers (-100A) are laminated at a speed of about /2 to 5 minutes. Therefore, the length of the wire 501 is suitable for about 100 people. Further, it has been confirmed from STN observations that the pitch between the wires 501 is approximately 20 to 100A.

Also, the electron mobility □ with this wire is 1 to 400 cm
/Volt/see, and compared to conventional chain-type organic molecules, it is possible to achieve a μ that is about 104 to 106 times higher. This also shows that the molecular structure in this example implements a quantum wire structure at the device level.

(Example 2) FIG. 6 shows a quantum dot and an example. An 8i substrate was used as the substrate 601. The same phthalocyanine molecules as shown in the previous examples were also deposited using an MBE or ALE apparatus. The deposition conditions were the same as in the previous example.

A wall formed by the hetero layer 603 forms a barrier between the quantum dots. The energy state at this time is similar to that shown in FIG. 3, resulting in a so-called MQW structure. By setting the thickness LB of the hetero layer 603 to about 10 to 100 layers, carriers can propagate to the adjacent well 604.
03 is realized by adding iodine or the like to the above phthalocyanine molecule.

(Example 3) FIG. 7 shows an example of a leading can type diode element using an organic quantum semiconductor according to the present invention.

Oxytitanyl phthalocyanine was vapor-deposited in vacuum at 10 Torr on a light-transmitting glass substrate coated with gold.
A thin film of 20 people was formed. This film was analyzed by X-ray diffraction and FT-
When analyzed by IR, the crystal axis (b axis) of phthalocyanine
It was confirmed that the board was standing in a direction that intersects with the board. Next, in the same manner, 2O oxytitanyl phthalocyanine was placed on a light-transmitting glass substrate 702 having an ITO electrode 705.
Laminated on A, and again oxynathanyl phthalocyanine 1
20 people were evaporated. Gold was deposited thereon as an electrode 704 to produce the semiconductor diode element shown in FIG. 7(a). In order to evaluate the optical and electrical characteristics of this device, we used Figure 7 (
As shown in a), a synchronous minimum voltage of 3 is applied between the ITO 705 Out poles 704, and the optical writing information as shown in FIG.
Write from the 05 side. (See figure (d)). The quantum wire of this example has Ti phthalocyanine-dimensional photoconductive properties.

In this example, the quantum wire columns were aligned with a 2OA pinch, but optical writing was performed at a pitch of 1 μm. In other words, 500 x 500 (=25 x 104) books were evaluated as one unit (1 bit). Further, the optical write signal was inputted as a pulse train in accordance with the synchronizing pulse 703.

At this time, the wavelength λ of the semiconductor laser is 780 nm, the writing cycle is 500 MHz, and the writing energy is 20 pJ/cm.
It was 2. Parallel processing could be performed at a density of 25 x 106 bino/mn when the effective writing cross-sectional area of the element was 5 x 5 mm. Note that the world for transmitting the synchronization pulse 703 at this time was 105 V/cm and the pulse width was 1 ms. An example of the transfer waveform is shown in FIG. 7(e). An example of the transferred waveform is shown in FIG. 7(e). As shown in the output waveform a in the figure, good transfer was achieved.

Further, the results of spectral absorption measurement, X-ray diffraction measurement, and FT-IR measurement are shown in FIGS. 7(c), (f), and (g). As can be seen from now on, it is thought that a quantum wire array as shown in FIG. 5(a) and a quantum energy structure as shown in FIG. 1(e) (here, only the valence band is shown) are formed.

FIG. 8 shows a fourth embodiment. This example is an example of an element in which an organic quantum semiconductor is used for the emitter layer 801, the base layer 802, or the collector layer 803 of a transistor element (FIG. 8(a)). Except for the organic element semiconductor portion, the (111) crystal plane of Si was used, and the manufacturing process used for ordinary inorganic semiconductors was used. Here, lead-free phthalocyanine was deposited as an organic quantum semiconductor using a molecular beam epitaxy method at 10-9 TorrT with 100 people. Thirty layers of pyrazine pyridine were laminated thereon in the same manner, and then five layers of these combinations were successively created to create a hetero-type MQW structure. As described in the third example, the results of absorption spectra, X-ray diffraction, and FT-IR were as shown in Figure 8(b).
The multilevel quantum structure shown in (c) and (d) was confirmed.

Figure 8 (e), (f) or (g), (h) or (i)
, (j) is an emitter 80 made of an organic quantum semiconductor.
An example is shown in which the above-described optical writing 701 is performed on the base 802 or the collector 803. According to the photoconductive properties of phthalocyanine, quantum wires with different electrical conductivities can be created in organic quantum semiconductors. Phthalocyanine generated carriers are transmitted along the quantum wire. By applying the synchronization pulse 703 at this time, the carriers are transferred to the adjacent mini-bands of the adjacent wells through the MQW structure shown in FIG. 8(b), (C), or (d) by tunneling or hopping. Conceivable. Furthermore, when the world due to the synchronization pulse 703 is not added, carriers are confined in the well. In this example, the number of MQWs was set to 5 and the above phototransmission characteristics were measured, and as a result, five values of current/voltage physical properties were obtained as shown in FIGS. 8(k) and (1). Note that the experimental conditions are the same as in the third example.

Fig. 9 shows a MOSFET (Fig. 9(a)) as a fifth embodiment.
)) shows an example using an organic quantum semiconductor. Figure 9 ((b
), (c)) and ((d), (e)) are examples in which an MQW structure made of an organic quantum semiconductor is used for the source layer 901 and the drain layer 903, respectively. The organic quantum semiconductor in this example was made of aluminum phthalocyanine fluoride at 15OA and cooled to -80°C, and otherwise formed in the same manner as in Example 2, and the film was placed in iodine gas at room temperature for 30 minutes.
I left it for a minute. Further, aluminum phthalocyanine fluoride was vapor-deposited again under cooling at -80°C, and iodine treatment was performed in the same manner as above. This process was repeated three times, and finally, a film of aluminum phthalocyanine was formed again, and an aluminum electrode was provided on top of the film.

By repeating this operation multiple times, a desired number of heterogeneous MQW structures were created. This MQW structure has the same energy band structure (FIGS. 3 and 6) as in the second embodiment, and can form the quantum dots described above. The method for measuring optical/electrical characteristics is as described above, by applying a pulsed optical writing signal flux to order a photocarrier, and then applying a synchronous pulse 70 applied between the drain 903 and the source 901.
Transfer using 3. Further, here, by applying a gate signal 905, further modulation can be applied to the carrier. This modulation method achieved similar effects to gate signals in MOSFETs conventionally realized using inorganic semiconductors.

FIG. 9 (O shows an example in which an organic quantum semiconductor is used for the gate layer 904. The manufacturing method is the same as that for the source layer and drain layer described above. Furthermore, on the gate layer 904, the optical writing wavelength λ A one-dimensional chain body that is transparent to the electrode and has electrical conduction anisotropy in the b-axis direction of O (see the same figure) is used as the electrode 910. Photocarriers generated by optical writing are formed in the gate layer 904. Sync pulse 9 inside MQW
Transferred by applying 05. Furthermore, these carriers create a two-dimensional multi-value voltage distribution (approximately 0 to 2 V) in the gate layer.
was able to form. The optical writing conditions and synchronization pulse conditions were as in the previous embodiment. Due to the above two-dimensional multi-value voltage distribution, the electron gas in the channel layer 902 of the MOSFET via the insulating film 912 and the bit (~1 μm x 1
It was possible to apply modulation at a density corresponding to pm). 1
When focusing on bits, the modulation of electrons in the channel layer is similar to that of conventional inorganic semiconductor MOSFETs. A data amount of 25 x 106 bits/mm2 can be simultaneously written in a gate layer of 5 mm x 5 mm, and the electron gas injected from the source layer is modulated according to this density to write the same amount of data, that is, 25 x 106 bits/mm2. Bit 1mm
2 parallel operations were completed.

(Effects of the Invention) As described above, the organic quantum semiconductor according to the present invention can create multiple quantum wells, has a quantum wire structure, and can be multiplexed and increased in density better than Si or GaAs.
It is a new semiconductor particularly suitable for information processing devices.

[Brief explanation of the drawing]

Figures 1 to 4 are diagrams illustrating detailed explanations of the present invention; Figure 5;
FIG. 6 is a diagram showing the first and second embodiments of the present invention, FIGS. 7(a) to (g) are diagrams showing the third embodiment of the present invention, and FIG.
FIGS. 9(a)-(1) are diagrams showing a fourth embodiment of the present invention, and FIGS. 9(a)-(g) are diagrams showing a fifth embodiment of the present invention.

Claims (7)

[Claims] (1) It is composed of at least two types of organic semiconductor layers each having a different band gap, and the plurality of semiconductor layers are stacked in an ultra-thin film structure for at least one period in a fixed stacking order, and a plurality of quantum wells are stacked. An organic quantum semiconductor with a multi-well structure. (2) In at least one period of the multiple quantum well structure, a tunnel structure, a semiconductor band structure, an elementary exciton structure,
The organic quantum semiconductor according to claim 1, having one of a superconducting structure, a quantum Hall structure, a resonant structure, a quantum confinement structure, a heterostructure, a Crohn-blockade structure, and a Schottky structure. (3) Claim 1 or 2, wherein the organic semiconductor comprises at least one of a one-dimensional electrical conductor, a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional photoconductor, and a two-dimensional photoconductor. The organic molecular semiconductor described above is used as a MOSF
A quantum semiconductor device characterized in that at least one of a source layer, a drain layer, or a channel layer of an ET structure is oriented in a direction along a gate electric field. (4) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electric conductor, a two-dimensional electric conductor, a one-dimensional optical semiconductor, and a two-dimensional photoconductor. A quantum semiconductor device characterized in that the gate layer of the structure is oriented in a direction perpendicular to the gate electric field. (5) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device characterized by being oriented in a direction along an applied electric field. (6) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device, characterized in that at least one of a base layer, an emitter layer, or a collector layer is oriented along an electric field applied between an emitter and a collector. (7) The organic molecular semiconductor according to claim 1 or 2, wherein the organic semiconductor layer comprises at least one of a one-dimensional electrical conductor, a two-dimensional electrical conductor, a one-dimensional optical semiconductor, and a two-dimensional optical conductor. A quantum semiconductor device characterized in that the base layer of the device is oriented perpendicularly to the electric field applied between the emitter and the collector.