JPH0444613B2 - - Google Patents
Info
- Publication number
- JPH0444613B2 JPH0444613B2 JP61013357A JP1335786A JPH0444613B2 JP H0444613 B2 JPH0444613 B2 JP H0444613B2 JP 61013357 A JP61013357 A JP 61013357A JP 1335786 A JP1335786 A JP 1335786A JP H0444613 B2 JPH0444613 B2 JP H0444613B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- sintered body
- glass powder
- powder sintered
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
Landscapes
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
Description
〔技術分野〕
この発明は、ガラスを粉砕した粉末の成形体を
焼成して得られるガラス粉末焼結体に関する。
〔背景技術〕
近年、高集積化したLSIや各種の素子を多数搭
載するための多層配線基板では、小型化や高信頼
性の要求が高まるにつれてセラミツクス材の多層
配線基板の利用が拡がつてきている。セラミツク
ス材の多層基板は、アルミナを主材にしてグリー
ンシートを形成し、このグリーンシート上に高融
点金属（Mo、Ｗ等）の導体配線を厚膜技術によ
り印刷形成する。そのあと、ことグリーンシート
を貼り合わせて積層した多層グリーンシートを約
1500〜1600℃の高温非酸化雰囲気中で焼成する。
しかし、上述のようなアルミナを主材料とする
多層配線基板では、アルミナの高い比誘電率と、
高い抵抗値を有する極細高融点金属配線によつ
て、基板配線中を伝搬する信号の伝達時間が長く
なり、高速化の要望に応え難かつた。もちろん、
高抵抗の高融点金属材料の代わりに、低抵抗金属
材料（Au、Ag、Ag−Pd、Cuなど）を使つて配
線を形成することも考えられはするけれども、上
記の各低抵抗金属材料は融点が1000℃付近であ
り、アルミナの焼結温度よりもはるかに低くなつ
ている。そのため、仮に用いたとしても、焼結以
前に配線パターンが融解して表面張力で収縮し断
線してしまうという問題があつた。
この問題を解決するため、ガラス、あるいはガ
ラス粉末焼結体（ガラス−セラミツクス体）の多
層配線基板が提案されている。
このようなガラス粉末焼結体の具体例が、特公
昭59−22399号公報、特開昭59−178752号公報、
特開昭57−6257号公報、および、特公昭59−
46900号公報に記載されている。しかし、特公昭
59−46900号公報以外の上記公報に記載されてい
るガラス粉末焼結体は、いずれも、組成にNa、
Ｋ、Li、Pbの比較的イオン伝導性の高い元素を
含んでいることから、マイグレーシヨン現象が生
ずる。そのため、基板としてもつとも重要な特性
である絶縁性の劣化が生じやすいという問題があ
る。
特公昭59−46900号公報に記載されているガラ
ス粉末焼結体は、上記のイオン伝導性の高い元素
を含んでおらず、上記マイグレーシヨンに伴う絶
縁性の劣化はないものであると考えられる。しか
しながら、特公昭59−46900号公報のガラス粉末
焼結体は、低抵抗金属配線を成形体（グリーンシ
ート）上に印刷形成しておいて、同時に焼成をお
こなうときに、配線と成形体の収縮率がうまく合
致しないため、焼成完成後の基板ガ反つたり、寸
法精度が良くないとともに、原料配合物を溶解す
るときの温度が高く（1500℃）、通常の製造方法
で製造する場合には難点がある。
〔発明の目的〕
この発明は、上記の事情に鑑み、低い温度での
焼成でも、十分に緻密で、低比誘電率特性を有す
るため、多層配線基板材料に用いても、マイグレ
ーシヨン現象による絶縁劣化が起こらないばかり
か、寸法精度よく、低抵抗金属材料の配線をおこ
なうことができ、しかも、原料ガラス溶解温度も
低いため、製造が容易なSiO2−Al2O3−MgO系
のガラス粉末焼結体を提供することを目的とす
る。
〔発明の開示〕
前記目的を達成するため、第１の発明は、ガラ
スを粉砕した粉末の成形体を焼成して得られるガ
ラス粉末焼結体において、
前記ガラスにおける重量％表示組成が、
48≦SiO2≦63
10≦Al2O3≦25
10≦MgO≦25
４≦B2O3≦10
であつて上記４成分の合計が100重量％（組成全
体）であることを特徴とするガラス粉末焼結体を
要旨とし、第２の発明は、ガラスを粉砕した粉末
の成形体を焼成して得られるガラス粉末焼結体に
おいて、
前記ガラスにおける主成分の重量％表示組成
が、
48≦SiO2≦63
10≦Al2O3≦25
10≦MgO≦25
４≦B2O3≦10
であつて、
副成分として、TiO2、ZrO2、SnO2、P2O5、
ZnO、MoO3、および、As2O3からなる群より選
ばれたすくなくともひとつの核発生剤となる金属
化合物を５重量％以下含有してなり、前記主成分
と副成分の合計が100重量％（組成全体）である
ことを特徴とするガラス粉末焼結体を要旨とす
る。
以下、この発明にかかるガラス粉末焼結体（以
下、単に「焼結体」と記す）をさらに詳しく説明
する。
粉末化されるSiO2−Al2O3−MgO系のガラス
の組成範囲が上記の範囲にあると、好ましくは、
850℃付近、すくなくとも950℃以下の焼成温度で
非多孔質の焼結をおこなうことがきる。そして焼
結体の主結晶相はコーデイエライトとなるため、
誘電率が低く、機械的強度も大きくなる。また、
ガラス原料の溶解温度も1400℃で十分できるた
め、通常の粘土ルツボや溶解炉で十分まにあうの
で、製造上からも都合がよい。
第１図は低抵抗金属材料配線の温度と収縮率の
関係をあらわすグラフであつて、曲線イはAuの
収縮曲線であり、曲線ロはAg−Pd合金（Ag：80
重量％、Pd：20重量％）の収縮曲線である。第
２図は、ガラス粉末焼結体の温度と収縮率の関係
をあらわすグラフであつて、曲線ハは後述する実
施例２におけるガラス粉末成形体の収縮曲線であ
り、曲線ニは、後述する比較例３のガラス粉末成
形体の収縮曲線である。配線の方は、400℃です
でに収縮がはじまつており、実施例２の方は低い
温度から収縮が始まつているため、うまく配線と
成形体の収縮を合わせることができる。比較例３
の方は、高い温度でないと収縮が始まらないた
め、低い焼成温度でうまく収縮を合わせることは
難しいのである。
ガラス粉末の作成に使われるガラスの組成が上
記のように限定されるのは、つぎのような理由か
らである。
SiO2の組成割合が63重量％を越えると、緻密
な焼結体となり難い。48重量％を下まわると、結
晶化温度が上昇して、950℃以下の焼成温度では
充分に結晶化することができなかつたり、緻密化
が難しくなる。
Al2O3の組成割合が25重量％を越えると、焼結
できる温度が上昇し、950℃以下の焼成温度では
十分な焼結がおこなえない。10重量％を下まわる
と、コーデイエライト結晶が少なくなり、SiO2
−MgO系の結晶が多く折出るするので比誘電率
が上昇する。
MgOの組成割合が25重量％を越えると、恐ら
くは、ケイ酸マグネシウムが折出するためと思わ
れるが、変形が大きくなり実用性に乏しい。10％
を下まわると、緻密な焼結体となり難い。
B2O3の組成割合が10重量％を越えると、ガラ
ス相が多く、発泡しやすくなり、焼成可能な温度
範囲も狭くなる。また、機械的強度も弱く実用性
に乏しくなる。４％を下まわると、ガラス粉末の
表面層の結晶化が急激に進みすぎるため緻密な焼
結体となり難い。
第２の発明において用いられる核発生剤は、結
晶化を促進するものであるが、これら、TiO2，
ZrO2、P2O5、ZnO、MoO3、および、As2O3が、
５重量％を越えると、結晶化が急激に進みすぎて
緻密な焼結体とならない。
続いて、この発明にかかる焼結体を、実施例に
基づいて詳述する。
第１表の実施例１〜13および比較例１，２に示
す割合の組成となるように各酸化物を調合したガ
ラス原料それぞれを、アルミナ質ルツボ内に入れ
て約1400℃の加熱温度下で溶融する。このように
して得られた溶融液を水中に投下して、透明性の
ガラスフリツトを得る。このフリツトを、乾式ま
たは湿式で、アルミナ質ボールミル中で充分粉砕
して、平均粒径１〜10μmのガラス粉末とする。
つぎに、ガラス粉末にポリブチルメタクリレー
ト樹脂、フタル酸ジブチル、トルエン等を加え混
練し、減圧下で脱泡処理しスラリーを得る。その
あと、スラリーを用いてドクタブレード法により
フイルムシート上に0.2mm厚の連続した乾燥シー
トを作成した。この乾燥シートをフイルムシート
からはがし、打ち抜きして適当な大きさのグリー
ンシートとした。つぎに、個々のグリーンシート
にスルホールおよび低抵抗金属材料による配線パ
ターンを印刷形成する。そして、スルホールと配
線パターンを形成したグリーンシート複数枚を積
層し、プレス成形により成形体とする。
このようにして準備された積層グリーンシート
を、第３図にみるように、まず、毎時150℃の速
度で500℃まで昇温し、２時間45分そのままで保
持してグリーンシート中の有機物質を除去した。
その後、毎時200℃で第１表に示した所定の焼成
温度t1まで昇温し、この焼成温度t1で３時間保持
して、グリーンシートを焼成した。こののち、毎
時110℃で400℃まで降温し、以後、放冷して焼結
体を得た。
なお、比較のために、ガラス原料をアルミナ質
ルツボ内に入れて溶融するときの温度を1500℃と
したガラス粉末を使つて、上記と同様にして得た
焼結体を比較例３として示した。
実施例および比較例の焼結体について比誘電率
および吸水率を測定し、その結果を第１表に示し
た。比誘電率の測定周波数は1MHzである。
Auペーストを用いて配線を形成した場合の焼
成後の反りを外観評価したときの結果も表示し
た。◎は、非常に良好（反りがない）、○は良好、
△はやや不良、×は全く不良（反りが極めて大き
い）、であることをそれぞれ示している。
[Technical Field] The present invention relates to a glass powder sintered body obtained by firing a molded body of powder obtained by pulverizing glass. [Background technology] In recent years, the use of ceramic multilayer wiring boards for mounting highly integrated LSIs and large numbers of various elements has increased as demands for miniaturization and high reliability have increased. ing. A multilayer ceramic substrate is formed by forming a green sheet using alumina as the main material, and conductor wiring made of a high melting point metal (Mo, W, etc.) is printed on the green sheet using thick film technology. After that, a multi-layer green sheet made by pasting and laminating the green sheets together is approximately
Calcinate in a high temperature non-oxidizing atmosphere at 1500-1600℃. However, in multilayer wiring boards mainly made of alumina as mentioned above, alumina's high dielectric constant and
Due to the ultra-thin refractory metal wiring having a high resistance value, the transmission time of the signal propagating through the board wiring becomes longer, making it difficult to meet the demand for higher speeds. of course,
Although it is possible to form wiring using low-resistance metal materials (Au, Ag, Ag-Pd, Cu, etc.) instead of high-resistance, high-melting-point metal materials, each of the above-mentioned low-resistance metal materials The melting point is around 1000℃, which is much lower than the sintering temperature of alumina. Therefore, even if it were used, there was a problem that the wiring pattern would melt before sintering, shrink due to surface tension, and break. To solve this problem, multilayer wiring boards made of glass or glass powder sintered bodies (glass-ceramic bodies) have been proposed. Specific examples of such glass powder sintered bodies are disclosed in Japanese Patent Publication No. 59-22399, Japanese Patent Application Laid-open No. 178752-1982,
JP-A-57-6257 and JP-A-59-
It is described in Publication No. 46900. However, Tokuko Akira
All of the glass powder sintered bodies described in the above publications other than Publication No. 59-46900 contain Na,
Migration phenomenon occurs because it contains elements with relatively high ionic conductivity, such as K, Li, and Pb. Therefore, there is a problem in that insulation, which is an important characteristic of a substrate, is likely to deteriorate. The glass powder sintered body described in Japanese Patent Publication No. 59-46900 does not contain the above-mentioned elements with high ionic conductivity, and it is thought that there is no deterioration in insulation properties due to the above-mentioned migration. . However, in the glass powder sintered body disclosed in Japanese Patent Publication No. 59-46900, low-resistance metal wiring is printed on a molded body (green sheet), and when simultaneously fired, the wiring and the molded body shrink. Because the ratios do not match well, the substrate warps after completion of firing, the dimensional accuracy is poor, and the temperature when melting the raw material mixture is high (1500℃), which makes it difficult to manufacture using normal manufacturing methods. There are some difficulties. [Purpose of the Invention] In view of the above circumstances, the present invention is sufficiently dense and has low dielectric constant characteristics even when fired at low temperatures, so even when used as a multilayer wiring board material, insulation due to migration phenomenon is prevented. SiO 2 −Al 2 O 3 −MgO-based glass powder not only does not cause deterioration, but also allows wiring of low-resistance metal materials with good dimensional accuracy. Furthermore, the melting temperature of the raw glass is low, making it easy to manufacture. The purpose is to provide a sintered body. [Disclosure of the Invention] In order to achieve the above-mentioned object, a first invention provides a glass powder sintered body obtained by firing a molded body of powder obtained by pulverizing glass, wherein the composition expressed in weight percent of the glass is 48≦ A glass powder characterized in that SiO 2 ≦63 10≦Al 2 O 3 ≦25 10≦MgO≦25 4≦B 2 O 3 ≦10 and the total of the above four components is 100% by weight (total composition) The gist of the invention is a sintered body, and the second invention is a glass powder sintered body obtained by firing a molded body of powder obtained by pulverizing glass, wherein the composition expressed in weight percent of the main components of the glass is 48≦SiO 2 ≦63 10≦Al 2 O 3 ≦25 10≦MgO≦25 4≦B 2 O 3 ≦10, and the subcomponents include TiO 2 , ZrO 2 , SnO 2 , P 2 O 5 ,
Contains 5% by weight or less of at least one metal compound selected from the group consisting of ZnO, MoO 3 and As 2 O 3 as a nucleating agent, and the total of the main component and subcomponents is 100% by weight. The gist is a glass powder sintered body characterized by (overall composition). Hereinafter, the glass powder sintered body (hereinafter simply referred to as "sintered body") according to the present invention will be explained in more detail. If the composition range of the SiO 2 −Al 2 O 3 −MgO glass to be powdered is within the above range, preferably,
Non-porous sintering can be performed at a firing temperature of around 850°C or at least 950°C or lower. And since the main crystal phase of the sintered body is cordierite,
It has a low dielectric constant and high mechanical strength. Also,
The glass raw material can be melted at a temperature of 1,400°C, which is convenient from a manufacturing standpoint, as it can be used in a regular clay crucible or melting furnace. Figure 1 is a graph showing the relationship between temperature and shrinkage rate of low-resistance metal wiring, where curve A is the shrinkage curve of Au, and curve B is the shrinkage curve of Ag-Pd alloy (Ag: 80
% by weight, Pd: 20% by weight). FIG. 2 is a graph showing the relationship between temperature and shrinkage rate of a glass powder sintered body, where curve C is a shrinkage curve of a glass powder molded body in Example 2, which will be described later, and curve D is a comparison curve, which will be described later. 3 is a shrinkage curve of the glass powder compact of Example 3. The wiring had already started shrinking at 400°C, and the shrinkage of Example 2 started at a lower temperature, so the shrinkage of the wiring and the molded body could be matched well. Comparative example 3
Since shrinkage does not begin unless the temperature is high, it is difficult to match the shrinkage at a low firing temperature. The composition of the glass used to create the glass powder is limited as described above for the following reasons. When the composition ratio of SiO 2 exceeds 63% by weight, it is difficult to form a dense sintered body. When it is less than 48% by weight, the crystallization temperature increases, and at a firing temperature of 950° C. or lower, sufficient crystallization cannot be achieved or densification becomes difficult. When the composition ratio of Al 2 O 3 exceeds 25% by weight, the temperature at which sintering can be performed increases, and sufficient sintering cannot be performed at a firing temperature of 950° C. or lower. When it is less than 10% by weight, cordierite crystals decrease and SiO 2
-Since many MgO-based crystals are precipitated, the relative permittivity increases. If the composition ratio of MgO exceeds 25% by weight, this is probably due to the precipitation of magnesium silicate, but deformation becomes large and it is impractical. Ten%
Below this, it is difficult to form a dense sintered body. If the composition ratio of B 2 O 3 exceeds 10% by weight, the glass phase will be large, foaming will occur easily, and the firing temperature range will be narrowed. In addition, the mechanical strength is weak, making it impractical. When it is less than 4%, crystallization of the surface layer of the glass powder progresses too rapidly, making it difficult to form a dense sintered body. The nucleating agent used in the second invention is one that promotes crystallization, and these include TiO 2 ,
ZrO 2 , P 2 O 5 , ZnO, MoO 3 and As 2 O 3 are
If it exceeds 5% by weight, crystallization will proceed too rapidly and a dense sintered body will not be obtained. Next, the sintered body according to the present invention will be explained in detail based on Examples. Glass raw materials prepared with each oxide prepared in the proportions shown in Examples 1 to 13 and Comparative Examples 1 and 2 in Table 1 were placed in an alumina crucible and heated at a heating temperature of approximately 1400°C. melt. The melt thus obtained is poured into water to obtain a transparent glass frit. This frit is sufficiently ground in an alumina ball mill, either dry or wet, to form a glass powder with an average particle size of 1 to 10 μm. Next, polybutyl methacrylate resin, dibutyl phthalate, toluene, etc. are added to the glass powder and kneaded, followed by defoaming treatment under reduced pressure to obtain a slurry. Thereafter, a continuous dry sheet with a thickness of 0.2 mm was formed on a film sheet using the slurry by a doctor blade method. This dried sheet was peeled off from the film sheet and punched out to obtain a green sheet of an appropriate size. Next, through-holes and a wiring pattern made of a low-resistance metal material are printed on each green sheet. Then, a plurality of green sheets with through-holes and wiring patterns formed thereon are laminated to form a molded body by press molding. As shown in Figure 3, the laminated green sheet prepared in this way was first heated to 500°C at a rate of 150°C per hour, and held at that temperature for 2 hours and 45 minutes to remove the organic matter in the green sheet. was removed.
Thereafter, the temperature was raised to a predetermined firing temperature t 1 shown in Table 1 at 200° C. per hour, and the green sheet was fired by holding at this firing temperature t 1 for 3 hours. Thereafter, the temperature was lowered to 400°C at a rate of 110°C per hour, and then allowed to cool to obtain a sintered body. For comparison, a sintered body obtained in the same manner as above was shown as Comparative Example 3 using glass powder whose glass raw material was placed in an alumina crucible and melted at a temperature of 1500°C. . The relative permittivity and water absorption of the sintered bodies of Examples and Comparative Examples were measured, and the results are shown in Table 1. The measurement frequency of the dielectric constant is 1MHz. The results of visual evaluation of warpage after firing when wiring is formed using Au paste are also displayed. ◎ is very good (no warpage), ○ is good,
△ indicates slightly poor quality, and × indicates completely poor quality (very large warpage).
以上詳述したように、この発明にかかる焼結体
では、得られた焼結体が緻密で小さい誘電率とな
つているだけでなく、それが950℃以下の焼成温
度で達成することができ、しかも、1400℃以下の
温度でガラス原料の溶融がおこなえる。したがつ
て、緻密で低比誘電率であることから、この焼結
体は、多層配線基板材料に適する素材となり、
950℃以下の焼成温度であるため、低抵抗金属材
料を印刷して焼成を同時におこない配線を形成す
ることもできる。また、ガラス原料の溶融温度が
低いため製造も容易である。
As detailed above, in the sintered body according to the present invention, not only is the obtained sintered body dense and has a low dielectric constant, but this can be achieved at a firing temperature of 950°C or less. Moreover, glass raw materials can be melted at temperatures below 1400℃. Therefore, since it is dense and has a low dielectric constant, this sintered body becomes a material suitable for multilayer wiring board materials.
Since the firing temperature is 950°C or lower, wiring can also be formed by printing a low-resistance metal material and firing it at the same time. Moreover, since the melting temperature of the glass raw material is low, manufacturing is easy.
第１図は、低抵抗金属材料配線の温度と収縮率
の関係をあらわすグラフ、第２図は、ガラス粉末
成形体の温度と収縮率の関係をあらわすグラフ、
第３図は、本発明にかかる焼結体の焼成プロフイ
ールをあらわすグラフである。
FIG. 1 is a graph showing the relationship between temperature and shrinkage rate of low-resistance metal material wiring, FIG. 2 is a graph showing the relationship between temperature and shrinkage rate of a glass powder compact,
FIG. 3 is a graph showing the firing profile of the sintered body according to the present invention.
Claims (1)
られるガラス粉末焼結体において、 前記ガラスにおける重量％表示組成が、 48≦SiO2≦63 10≦Al2O3≦25 10≦MgO≦25 ４≦B2O3≦10 であつて上記４成分の合計が100重量％であるこ
とを特徴とするガラス粉末焼結体。 ２ ガラスを粉砕した粉末が平均粒径１〜10μm
のものである特許請求の範囲第１項記載のガラス
粉末焼結体。 ３ ガラスを粉砕した粉末の成形体を焼成して得
られるガラス粉末焼結体において、 前記ガラスにおける主成分の重量％表示組成が 48≦SiO2≦63 10≦Al2O3≦25 10≦MgO≦25 ４≦B2O3≦10 であつて、 副成分として、TiO2、ZrO2，SnO2、P2O5、
ZnO、MoO3、および、As2O3からなる群より選
ばれたすくなくともひとつの核発生剤となる金属
化合物を５重量％以下含有してなり、前記主成分
と副成分の合計が100重量％であることを特徴と
するガラス粉末焼結体。 ４ ガラスを粉砕した粉末が平均粒径１〜10μm
のものである特許請求の範囲第３項記載のガラス
粉末焼結体。[Claims] 1. In a glass powder sintered body obtained by firing a molded body of powder obtained by crushing glass, the composition expressed in weight percent of the glass is 48≦SiO 2 ≦63 10≦Al 2 O 3 ≦ 25 A glass powder sintered body, characterized in that 10≦MgO≦25 4≦B 2 O 3 ≦10, and the total of the above four components is 100% by weight. 2 Powder obtained by crushing glass has an average particle size of 1 to 10 μm
The glass powder sintered body according to claim 1, which is a glass powder sintered body according to claim 1. 3 In a glass powder sintered body obtained by firing a molded body of powder obtained by pulverizing glass, the weight percent composition of the main components in the glass is 48≦SiO 2 ≦63 10≦Al 2 O 3 ≦25 10≦MgO ≦25 4≦B 2 O 3 ≦10, and the subcomponents include TiO 2 , ZrO 2 , SnO 2 , P 2 O 5 ,
Contains 5% by weight or less of at least one metal compound selected from the group consisting of ZnO, MoO 3 and As 2 O 3 as a nucleating agent, and the total of the main component and subcomponents is 100% by weight. A glass powder sintered body characterized by: 4 Powder obtained by crushing glass has an average particle size of 1 to 10 μm
The glass powder sintered body according to claim 3, which is a glass powder sintered body according to claim 3.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013357A JPS62171943A (en) | 1986-01-23 | 1986-01-23 | Sintered glass powder |
| US07/004,198 US4764486A (en) | 1986-01-23 | 1987-01-16 | Sintered glass-powder product |
| DE19873701973 DE3701973A1 (en) | 1986-01-23 | 1987-01-23 | Sintered glass powder product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013357A JPS62171943A (en) | 1986-01-23 | 1986-01-23 | Sintered glass powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62171943A JPS62171943A (en) | 1987-07-28 |
| JPH0444613B2 true JPH0444613B2 (en) | 1992-07-22 |
Family
ID=11830848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61013357A Granted JPS62171943A (en) | 1986-01-23 | 1986-01-23 | Sintered glass powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62171943A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2852311B1 (en) * | 2003-03-13 | 2005-04-15 | GLASS YARNS FOR REINFORCING ORGANIC AND / OR INORGANIC MATERIALS, PROCESS FOR PRODUCING SAID GLASS YARN AND COMPOSITION THEREOF |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1452849A (en) * | 1974-01-02 | 1976-10-20 | Ibm | Sinterable alumina compositions |
| US4396720A (en) * | 1982-07-06 | 1983-08-02 | Corning Glass Works | Transparent glass-ceramics containing mullite |
| JPS5946900A (en) * | 1982-09-10 | 1984-03-16 | 株式会社荏原製作所 | Method of burning radioactive waste |
| JPS5992943A (en) * | 1982-11-15 | 1984-05-29 | Ngk Spark Plug Co Ltd | Crystallized glass material |
| JPS59137341A (en) * | 1983-01-20 | 1984-08-07 | Ngk Spark Plug Co Ltd | Crystallized glass body |
| JPS60141642A (en) * | 1983-12-28 | 1985-07-26 | Tdk Corp | Low expansion glass having stability at high temperature |
| JPS61274397A (en) * | 1985-05-30 | 1986-12-04 | 株式会社住友金属セラミックス | Low temperature baked ceramic substrate and manufacture thereof |
-
1986
- 1986-01-23 JP JP61013357A patent/JPS62171943A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62171943A (en) | 1987-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |