JPH0444814B2 - - Google Patents
Info
- Publication number
- JPH0444814B2 JPH0444814B2 JP59264128A JP26412884A JPH0444814B2 JP H0444814 B2 JPH0444814 B2 JP H0444814B2 JP 59264128 A JP59264128 A JP 59264128A JP 26412884 A JP26412884 A JP 26412884A JP H0444814 B2 JPH0444814 B2 JP H0444814B2
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- film
- layer
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052714 tellurium Inorganic materials 0.000 claims description 47
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 17
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 24
- 238000001704 evaporation Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光記録媒体、特に光による記録、およ
び消去可能なカルコゲナイド系酸化物からなる光
記録媒体に関するものであり、長期間にわたつて
光記録特性が保持される安定性に優れた光記録媒
体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium, particularly an optical recording medium made of an erasable chalcogenide oxide, and which is capable of being exposed to light for a long period of time. The present invention relates to an optical recording medium that maintains recording characteristics and has excellent stability.
光記録媒体には、レーザー光の熱エネルギーに
よつて小孔あるいは泡を形成する方式のもの及び
膜の光学的特性を変化する方式のものが知られて
いる。前者は記録の際に、記録膜層に凹凸の形状
変化を生ずるため、記録膜や基板が経時的に変
質、腐蝕を受けやすく、通常二枚の記録媒体をエ
アサンドイツチ構造にして使用されていた。しか
し後者はこの必要はなく、単に二枚の記録媒体を
接着させて使用できるため製造工程を大巾に簡略
化できる利点があつた。後者に使用される材料の
うち、感度の高いもの、即ち一定の入射光強度に
対して光学的特性の変化の大きい材料としてカル
コゲナイド系酸化物、特にテルル酸化物TeOxが
知られており、Ｘは０＜Ｘ＜2.0のものが用いら
れる。
There are known optical recording media that use the thermal energy of laser light to form small holes or bubbles, and those that change the optical properties of the film. In the former case, the recording film layer undergoes uneven shape changes during recording, so the recording film and substrate are susceptible to deterioration and corrosion over time, so two recording media are usually used in an air sandwich structure. was. However, the latter does not require this, and has the advantage that the manufacturing process can be greatly simplified because two recording media can be simply glued together. Among the materials used for the latter, chalcogenide oxides, especially tellurium oxide TeOx, are known as materials with high sensitivity, that is, materials with large changes in optical properties with respect to a constant incident light intensity. 0<X<2.0 is used.
テルル酸化物薄膜の製造法としては、TeO2の
粉末をＷまたはMoのボート型ヒーターにのせ、
ヒーターを通電加熱してTeO2を一部還元しなが
ら真空蒸着する方法、TeO2粉末と各種の還元金
属の混合物を石英るつぼに入れ、これを真空中で
加熱蒸着する方法、TeO2と金属Teとをそれぞれ
に別の蒸発源として用い、同時に蒸着する方法等
が知られている。 The method for manufacturing a tellurium oxide thin film is to place TeO 2 powder on a W or Mo boat heater,
A method in which TeO 2 is partially reduced by vacuum evaporation by heating with a heater, a method in which a mixture of TeO 2 powder and various reduced metals is placed in a quartz crucible, and the mixture is heated and evaporated in a vacuum, TeO 2 and metal Te A method is known in which both are used as separate evaporation sources and are simultaneously evaporated.
しかし、これらの方法のうち、前２者は簡便な
方法ではあるが、蒸着中にボートあるいは還元金
属の還元力が変化するため、蒸着された膜の膜厚
方向の組成の不規則な変化が生じ易いという欠点
がある。
However, although the first two methods are simple, they may cause irregular changes in the composition of the deposited film in the thickness direction because the reducing power of the boat or reducing metal changes during deposition. The disadvantage is that it is easy to occur.
２つの蒸発源を用いる方法は組成が膜厚方向で
変化せず、均一な膜を得ることができる。この方
法によつて製作されたTeOxのＸが１未満の膜
は、黒化開始温度が低くまた感度が高いという利
点を有する。しかるに該膜は黒化開始温度以下の
比較的高温下に放置された場合、及び高湿度下に
放置された場合の透過率の変化が著しい。このた
め、主として膜の安定性の点から、感度は劣るも
ののＸが１以上の範囲のTeOx膜が一般的に使用
されている。 In the method using two evaporation sources, the composition does not change in the film thickness direction, and a uniform film can be obtained. A TeOx film produced by this method in which X is less than 1 has the advantage of a low blackening initiation temperature and high sensitivity. However, when this film is left at a relatively high temperature below the blackening initiation temperature or when left under high humidity, the transmittance changes significantly. For this reason, mainly from the viewpoint of film stability, TeOx films in which X is 1 or more are generally used, although their sensitivity is inferior.
このような、カルコゲナイド系記録媒体の長期
にわたる安定性向上に関してはすでに多くの技術
が開示れており、例えば耐蝕性の良い金属中に分
散させるもの（特開昭58−164037）、有機物質で
コーテイングするもの（特開昭56−21892、特開
昭58−125248、特開昭58−203643）、無機物質で
コーテイングするもの（特開昭58−199449）、表
面を強制的に酸化するもの（特開昭56−3442、特
開昭58−94144、特開昭58−189850、特開昭59−
2245）等を例示することができるが、操作が繁雑
になつたり、かならずしも効果が十分ではない場
合が多かつた。 Many techniques have already been disclosed for improving the long-term stability of chalcogenide-based recording media, such as dispersion in metal with good corrosion resistance (Japanese Patent Application Laid-Open No. 164037/1983), and coating with organic substances. (Japanese Unexamined Patent Applications No. 56-21892, No. 125248, No. 58-203643), coating with an inorganic substance (No. 199449 No. 58), and forcibly oxidizing the surface (No. 1987-3442, 1982-94144, 189850, 189850, 59-
2245), but the operations were often complicated and the effects were not always sufficient.
本発明は長期にわたる安定性が向上した光記録
媒体を提供することを目的とする。 An object of the present invention is to provide an optical recording medium with improved long-term stability.
かかる本発明の目的は高周波電力によつてプラ
ズマ化された酸素ガス及び／又は不活性ガス中を
通過する金属テルル蒸気によつてａ）テルル及
び／又は式TeOx（０＜Ｘ＜２）で示されるテル
ル低酸化物からなる層及びｂ）二酸化テルル
（TeO2）層を基板上に形成してなる光記録媒体に
よつて達成された。本発明によれば特に感度の高
い領域にあるテルル又は式TeOx（０＜Ｘ＜１）
で示されるテルル低酸化物からなる記録層であつ
ても、安定性に優れた光記録媒体が提供される。
The object of the present invention is to produce a) a) tellurium and/or a compound represented by the formula TeOx (0<X<2) by a metallic tellurium vapor passing through an oxygen gas and/or an inert gas that is turned into plasma by high-frequency power; This was achieved by an optical recording medium formed by forming on a substrate a layer of low tellurium oxide and b) a tellurium dioxide (TeO 2 ) layer. According to the invention, tellurium or formula TeOx (0<X<1) in a particularly sensitive region
An optical recording medium with excellent stability can be provided even if the recording layer is made of a tellurium low oxide represented by:
以下図面を参照して詳細に説明する。 A detailed explanation will be given below with reference to the drawings.
この発明においては、酸素ガス及び／又は不活
性ガス（以下総称して単にガスということがあ
る）雰囲気中で金属テルルがイオンプレーテイン
グ法によつて基板上に蒸着される。 In this invention, metallic tellurium is deposited on a substrate by an ion plating method in an oxygen gas and/or inert gas (hereinafter sometimes simply referred to as gas) atmosphere.
すなわち、第２図にその概念図を示すように、
製造装置は真空槽３内に設けられた金属テルル１
をのせた加熱ボート２、これに対向して基板７を
保持する基板保持具８及びこの間に配設された高
周波励起コイル４からなる。 In other words, as shown in the conceptual diagram in Figure 2,
The manufacturing equipment is a metal tellurium 1 installed in a vacuum chamber 3.
It consists of a heating boat 2 carrying a substrate 7, a substrate holder 8 opposing the heating boat 2 holding a substrate 7, and a high frequency excitation coil 4 disposed between them.
真空槽３内はまず酸素ガス及び／又は不活性ガ
スで充填される。この際、安定なテルル低酸化物
膜を得るためには真空槽内をまず１×10-5Torr
程度以上の高真空とした後、高純度酸素ガス及
び／又は不活性ガスを導入し、槽内の真空度を１
×10-4〜９×10-3Torr、好ましくは２×10-4〜５
×10-3Torrに保つのがよい。なお、不活性ガス
としてアルゴンガス、ヘリウムガス、窒素ガス等
を例示することが可能である。 The inside of the vacuum chamber 3 is first filled with oxygen gas and/or inert gas. At this time, in order to obtain a stable tellurium low oxide film, the inside of the vacuum chamber must be adjusted to 1×10 -5 Torr.
After creating a high vacuum level, high-purity oxygen gas and/or inert gas is introduced to reduce the vacuum level in the tank to 1.
×10 -4 to 9 × 10 -3 Torr, preferably 2 × 10 -4 to 5
It is best to keep it at ×10 -3 Torr. In addition, it is possible to illustrate argon gas, helium gas, nitrogen gas, etc. as an inert gas.
この状態でスパイラルコイル状の高周波励起コ
イル４に50〜500ワツトの電圧を印加し、高周波
電界をつくり、ガスを励起してプラズマを生成さ
せる。生成されるプラズマは、コイル形状、大き
さ、電界の強さ及び真空度によつて制御される
が、その制御は容易であり、高制度の制御が可能
である。 In this state, a voltage of 50 to 500 watts is applied to the spiral coil-shaped high-frequency excitation coil 4 to create a high-frequency electric field and excite the gas to generate plasma. The generated plasma is controlled by the shape and size of the coil, the strength of the electric field, and the degree of vacuum, and the control is easy and can be controlled with high accuracy.
プラズマ生成後、加熱ボート２に通電し、金属
テルル１を加熱・融解して蒸発させる。加熱温度
及び真空槽３内の圧力によつてテルルの蒸気圧が
定まり、さらにボート開口部面積によつてテルル
の蒸発量が規定される。そして、プラズマ内を通
過したテルルの蒸発粒子は、第２図中に模式的に
示したように、プラズマ内の酸素イオンやラジカ
ルの衝撃によりその一部が酸化され、酸化されな
かつた蒸発粒子と共に基板面上に沈着する。第２
図中５，５′は酸化したテルルの蒸発粒子を、６，
６′は酸化されなつた蒸発粒子を示す。ここで、
基板としてはガラス又はアクリル板、ポリカーボ
ネート板をはじめとする各種プラスチツクを使用
することができる。 After plasma generation, electricity is applied to the heating boat 2 to heat and melt the metal tellurium 1 and evaporate it. The vapor pressure of tellurium is determined by the heating temperature and the pressure inside the vacuum chamber 3, and the amount of evaporation of tellurium is determined by the boat opening area. As shown schematically in Figure 2, the tellurium evaporated particles that have passed through the plasma are partially oxidized by the bombardment of oxygen ions and radicals in the plasma, and together with the evaporated particles that have not been oxidized. Deposit on the substrate surface. Second
In the figure, 5, 5' are oxidized tellurium evaporated particles, 6,
6' indicates oxidized vaporized particles. here,
As the substrate, various plastics such as glass or acrylic plates and polycarbonate plates can be used.
テルル酸化物の組成（Ｘの値）はスパイラルコ
イル状の高周波励起コイル４に印加する電力の大
きさ、酸素ガスの分圧Po及び／又は金属テルル
の蒸発速度を変化させることにより自由に制御で
きる。例えば、ガス分圧Poを大きくしたり、印
加電力を大きくしたり、金属テルルの蒸発速度を
小さくすることによつてＸを大きくすることがで
きる。しかして本発明の記録媒体はまず高周波電
力、ガス分圧、金属テルルの蒸発速度を選択して
基板上にテルル又はテルル低酸化物からなる層を
形成し、次いで直ちに同一蒸着装置、同一蒸発源
を用いて、高周波電力、ガス分圧、金属テルルの
蒸発速度の少なくともいずれかひとつ以上の条件
を変えることによつて二酸化テルル層を連続して
形成することにより得ることができる（第１図）。
従つて本発明の記録媒体はその製造方法が簡易で
あり、安価に製造し得るだけでなくテルル層及
び／又はテルル低酸化物層と二酸化テルル層の界
面に異物が入り込むこともなく、膜相互間の密着
性も良い。同様にして基板上に二酸化テルル層を
形成させた後にテルル層及び／又はテルル低酸化
物層を形成することにより本発明の記録媒体を得
ることもできる。いずれの二酸化テルル層も耐蝕
性に優れているため長期間にわたる安定化に優れ
た効果を発揮する。二酸化テルル層の厚さは特に
厚くする必要はなく、10〜1000Å程度の厚さであ
れば上該目的を十分満たすことが可能であり、こ
の範囲で使用される。本発明では、必要に応じ
て、透明性の良い高分子膜、無機質膜等を設け
て、さらに安定性を向上させることも可能であ
る。また本発明では、必要に応じてテルル酸化物
層及び／又はテルル層には上記の効果を損わない
範囲で他の物質、例えば増感剤や安定剤を含有せ
しめることができる。 The composition of the tellurium oxide (the value of . For example, X can be increased by increasing the gas partial pressure Po, increasing the applied power, or decreasing the evaporation rate of metallic tellurium. Therefore, in the recording medium of the present invention, a layer of tellurium or low tellurium oxide is formed on a substrate by first selecting high frequency power, gas partial pressure, and evaporation rate of metal tellurium, and then immediately using the same evaporation device and the same evaporation source. can be obtained by continuously forming a tellurium dioxide layer by changing at least one of the following conditions: high frequency power, gas partial pressure, and evaporation rate of metal tellurium (Figure 1). .
Therefore, the recording medium of the present invention not only has a simple manufacturing method and can be manufactured at low cost, but also prevents foreign matter from entering the interface between the tellurium layer and/or the tellurium low oxide layer and the tellurium dioxide layer, and allows the films to be mutually bonded. The adhesion between them is also good. Similarly, the recording medium of the present invention can also be obtained by forming a tellurium dioxide layer on a substrate and then forming a tellurium layer and/or a tellurium low oxide layer. Since both tellurium dioxide layers have excellent corrosion resistance, they exhibit an excellent stabilizing effect over a long period of time. The tellurium dioxide layer does not need to be particularly thick, and a thickness of about 10 to 1000 Å can sufficiently satisfy the above purpose, and is used within this range. In the present invention, it is also possible to further improve stability by providing a highly transparent polymer film, inorganic film, etc., if necessary. Further, in the present invention, the tellurium oxide layer and/or the tellurium layer may contain other substances, such as sensitizers and stabilizers, as long as the above-mentioned effects are not impaired, if necessary.
次に実施例をもつて本発明を詳細に説明する。 Next, the present invention will be explained in detail using examples.
第２図に示した装置により、初期圧力Ｐが１×
10-5Torrとなるまで排気し、酸素ガス（90Vol.
％）とアルゴンガス（10Vol.％）の混合ガスを４
×10-4Torrまで導入する。これに周波数13.56M
Hz、200ワツトの高周波電力を印加してプラズマ
を発生させる。そして純度99.99％の金属テルル
を450〜500℃に保つて融解、蒸発させ、約12Å／
secの蒸着速度でガラス製基板上及びPMMA製基
板上に沈着させた。このとき形成された薄膜の厚
さは0.1μm、膜組成はオージエ電子分光法により
Ｘ＝0.6であつた。次にこの上に蒸着速度を約４
Å／secにおとして薄膜を形成した。この薄膜の
厚さは0.01μm、膜組成はＸ＝2.0であつた。 The device shown in Figure 2 allows the initial pressure P to be 1×
Exhaust the air until the pressure reaches 10 -5 Torr and add oxygen gas (90Vol.
%) and argon gas (10Vol.%).
Introduce up to ×10 -4 Torr. This has a frequency of 13.56M
Plasma is generated by applying high frequency power of 200 watts at Hz. The metallic tellurium with a purity of 99.99% is then melted and evaporated by keeping it at 450 to 500°C to produce approximately 12 Å/
Deposits were made on glass substrates and on PMMA substrates at a deposition rate of sec. The thickness of the thin film formed at this time was 0.1 μm, and the film composition was determined to be X=0.6 by Auger electron spectroscopy. Next, increase the deposition rate to about 4
A thin film was formed at a rate of Å/sec. The thickness of this thin film was 0.01 μm, and the film composition was X=2.0.
又、対比のために二酸化テルル膜を形成しない
もの（これを比較例Ａとする。）および金属テル
ルと二酸化テルルを別々の蒸発源から同時に蒸発
させＸ＝0.6なる膜厚0.1μmのテルル低酸化物から
なる薄膜を真空蒸着法により形成した。次に二酸
化テルルの蒸発源のみ加熱し二酸化テルルを溶
融、蒸発させてテルル低酸化物層の上に二酸化テ
ルル層を形成した。（これを比較例Ｂとする。）
これら三種類の記録媒体に対して、波長830nm
の半導体レーザで記録と再生を行なつた。レーザ
パワー7mW、ビーム径1.8μmで記録を行ない、
1mWのパワーで再生を行なつたが、特性に差は
なかつた。次に温度40℃、相対湿度90％の恒温恒
湿槽に入れ、30日経過後では、比較例Ａ，Ｂでは
正常な記録を行なうのにレーザ出力20〜50mWを
要し、明らかに特性の劣化を示した。しかし本発
明に基づく実施例では成膜直後と何ら変化はな
く、安定性向上に有効であることを示している。 For comparison, we also prepared a film that does not form a tellurium dioxide film (this is referred to as Comparative Example A) and a low-oxidation film of tellurium with a film thickness of 0.1 μm where metal tellurium and tellurium dioxide are simultaneously evaporated from separate evaporation sources so that X = 0.6. A thin film consisting of the material was formed by vacuum evaporation. Next, only the tellurium dioxide evaporation source was heated to melt and evaporate the tellurium dioxide to form a tellurium dioxide layer on the tellurium low oxide layer. (This is referred to as Comparative Example B.) For these three types of recording media, a wavelength of 830 nm
Recording and playback were performed using a semiconductor laser. Recording was performed with a laser power of 7 mW and a beam diameter of 1.8 μm.
Reproduction was performed with a power of 1mW, but there was no difference in characteristics. Next, they were placed in a constant temperature and humidity chamber at a temperature of 40°C and a relative humidity of 90%, and after 30 days, Comparative Examples A and B required a laser output of 20 to 50 mW to perform normal recording, and the characteristics clearly deteriorated. showed that. However, in the examples based on the present invention, there is no change at all from immediately after film formation, indicating that it is effective in improving stability.
又、膜面に鋭い刃物で１mm方眼の刻み目を100
個つけて、これにセロテープを貼り付けて90°引
き起こす剥離試験の結果では、実施例と比較例Ａ
では膜面と基板面の剥離は全くなく、実用上十分
な強さの膜が得られたが、比較例Ｂでは完全に剥
離してしまい、単なる真空蒸着法では強固な膜は
形成しえないことを示している。 Also, make 100 incisions of 1 mm grid on the membrane surface with a sharp knife.
In the results of a peel test by attaching cellophane tape to this and pulling it 90 degrees, Example and Comparative Example A
In Comparative Example B, there was no peeling between the film surface and the substrate surface, and a film with sufficient strength for practical use was obtained, but in Comparative Example B, complete peeling occurred, and a strong film could not be formed by simple vacuum evaporation. It is shown that.
（発明の効果）
本発明によれば、真空槽内で蒸発したテルル粒
子が、酸素ガスプラズマ内を通過する過程で活性
化され、一部は酸化されて基板上に沈着する。こ
のため、はく離しにくい、環境による影響を受け
難い丈夫な安定したテルル層及び又はテルル低酸
化物からなる層が形成出来る。(Effects of the Invention) According to the present invention, tellurium particles evaporated in a vacuum chamber are activated in the process of passing through an oxygen gas plasma, and some of them are oxidized and deposited on a substrate. Therefore, it is possible to form a strong and stable tellurium layer and/or a layer made of low tellurium oxide that is difficult to peel off and is not easily affected by the environment.
そして本発明によれば該テルル及び又はテルル
低酸化物からなる層の表面には安定な二酸化テル
ル層が形成されているので該テルル及び又はテル
ル低酸化物からなる層の安定性は一層向上され
る。 According to the present invention, since a stable tellurium dioxide layer is formed on the surface of the layer made of tellurium and/or tellurium low oxide, the stability of the layer made of tellurium and/or tellurium low oxide is further improved. Ru.
更に本発明に従えばテルル及び／又はテルル低
酸化物からなる層及び二酸化テルル層が同一の装
置内で同一の蒸発源により形成されるのでその界
面に異物が混入せず、従つて膜相互間の密着性が
極めて優れている。 Furthermore, according to the present invention, the layer of tellurium and/or low tellurium oxide and the tellurium dioxide layer are formed in the same device and by the same evaporation source, so that no foreign matter is mixed in at the interface, and therefore there is no interference between the films. The adhesion is extremely good.
従つて、従来安定性を欠き実用化に不適と思わ
れていた高感度領域のテルル及び又はテルル低酸
化物からなる層を含む記録媒体が極めて経済的
に、しかも高い安定性を備えたものとして実現出
来るという顕著な効果を奏する。 Therefore, a recording medium containing a layer of tellurium and/or low tellurium oxide in the high-sensitivity region, which was conventionally thought to lack stability and be unsuitable for practical use, has now been made extremely economical and highly stable. It has the remarkable effect of being achievable.
第１図は本発明に基づく光記録媒体の構成図、
第２図は本発明を実施するイオンプレーテイング
装置の模式図を示す。
図中、１は金属テルル、２は蒸発ボート、３は
真空槽、４は高周波コイル、７は基板、８は基板
保持具、９はテルル低酸化物層および１０は二酸
化テルル層である。
FIG. 1 is a configuration diagram of an optical recording medium based on the present invention,
FIG. 2 shows a schematic diagram of an ion plating apparatus implementing the present invention. In the figure, 1 is tellurium metal, 2 is an evaporation boat, 3 is a vacuum chamber, 4 is a high frequency coil, 7 is a substrate, 8 is a substrate holder, 9 is a tellurium low oxide layer, and 10 is a tellurium dioxide layer.
Claims (1)
ス及び／又は不活性ガス中を通過する金属テルル
蒸気から形成された、ａ）テルル及び／又は式
TeOx（０＜Ｘ＜２）で示されるテルル低酸化物
からなる層及びｂ）二酸化テルル（TeO2）層を
基板上に形成してなる光記録媒体。1. a) tellurium and/or formula formed from metallic tellurium vapor passing through oxygen gas and/or inert gas plasmanized by high frequency power;
An optical recording medium comprising a layer made of a tellurium low oxide represented by TeOx (0<X<2) and b) a tellurium dioxide (TeO 2 ) layer formed on a substrate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59264128A JPS61142544A (en) | 1984-12-13 | 1984-12-13 | Optical recording medium consisting of chalcogenide oxide |
| EP85309089A EP0188100B1 (en) | 1984-12-13 | 1985-12-13 | Optical recording medium formed of chalcogen oxide and method for producing same |
| DE8585309089T DE3582149D1 (en) | 1984-12-13 | 1985-12-13 | OPTICAL RECORDING MEDIUM FORMED FROM CHALCOGENOXIDE AND METHOD FOR THE PRODUCTION THEREOF. |
| US07/082,909 US4786538A (en) | 1984-12-13 | 1987-08-10 | Optical recording medium formed of chalcogenide oxide and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59264128A JPS61142544A (en) | 1984-12-13 | 1984-12-13 | Optical recording medium consisting of chalcogenide oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61142544A JPS61142544A (en) | 1986-06-30 |
| JPH0444814B2 true JPH0444814B2 (en) | 1992-07-22 |
Family
ID=17398856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59264128A Granted JPS61142544A (en) | 1984-12-13 | 1984-12-13 | Optical recording medium consisting of chalcogenide oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61142544A (en) |
-
1984
- 1984-12-13 JP JP59264128A patent/JPS61142544A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61142544A (en) | 1986-06-30 |
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