JPH0444815B2 - - Google Patents
Info
- Publication number
- JPH0444815B2 JPH0444815B2 JP61302607A JP30260786A JPH0444815B2 JP H0444815 B2 JPH0444815 B2 JP H0444815B2 JP 61302607 A JP61302607 A JP 61302607A JP 30260786 A JP30260786 A JP 30260786A JP H0444815 B2 JPH0444815 B2 JP H0444815B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- layer
- recording medium
- carbon
- undercoat layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 7
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 239000011669 selenium Substances 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 238000005553 drilling Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 37
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- -1 polychlorotrifluoroethylene Polymers 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 3
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 3
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018152 SeF6 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- LMDVZDMBPZVAIV-UHFFFAOYSA-N selenium hexafluoride Chemical compound F[Se](F)(F)(F)(F)F LMDVZDMBPZVAIV-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高密度・高速フアイルが可能な光学
的記録用媒体に関する。詳しくは、基板上に形成
した記録用薄膜にレーザービームを照射して発生
した熱により、該薄膜が蒸発あるいは溶融除去さ
れることを利用した光学的記録用媒体に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium capable of high-density and high-speed files. Specifically, the present invention relates to an optical recording medium that utilizes the fact that a thin recording film formed on a substrate is evaporated or melted away by heat generated by irradiating the thin film with a laser beam.
（従来の技術）
基板上に形成された薄膜にレーザービームを照
射して穴（ピツト）を形成するようにした光学的
記録用媒体として、従来より、Te，Biなどの金
属薄膜が利用されている。さらに、経時安定性を
増すためにTe，SeなどからなるTe系合金薄膜
や、これらの金属を含有するプラズマ重合膜が利
用されている。これらの材料は低融点であるため
記録に要するレーザー光のパワーが小さく記録感
度の点で有利である。(Prior art) Metal thin films such as Te and Bi have traditionally been used as optical recording media in which holes (pits) are formed by irradiating a thin film formed on a substrate with a laser beam. There is. Furthermore, to increase stability over time, Te-based alloy thin films made of Te, Se, etc., and plasma polymerized films containing these metals are used. Since these materials have a low melting point, the power of the laser beam required for recording is small, and they are advantageous in terms of recording sensitivity.
一方、これらの記録媒体に用いる基板として
は、プラスチツク、ガラス、金属あるいは、これ
らの基板上に光硬化性樹脂を塗布したものが挙げ
られる。 On the other hand, the substrates used for these recording media include plastic, glass, metal, and substrates coated with photocurable resins.
上記基板と薄膜記録媒体とからなる系において
レーザー光による薄膜の穿孔には、レーザー加熱
によつて溶融した膜物質が基板との付着力にうち
かつて分離することが必要である。このような目
的のために記録層と基板との間にフルオロカーボ
ン薄膜からなる下引き層を設けることが検討され
ている（特開昭59−90246号公報）。基板と膜物質
との間の付着力を決める要因は、基板表面及び記
録層物質の表面張力や、基板表面層の分子量、架
橋度等であるが、該付着力が小さければより小さ
なレーザー光パワーで短時間にピツトを形成する
ことができる。これは記録感度の向上を意味し、
高速処理のフアイル記録、及び安価な低出力半導
体レーザーの使用が可能となる。さらに高品質の
記録を行うためには形成されたピツト形状が明確
な輪郭を有し、かつ、一様であることが要求され
る。 In order to perforate a thin film using a laser beam in a system consisting of the substrate and a thin film recording medium, it is necessary that the film material melted by laser heating be separated by the adhesive force with the substrate. For this purpose, it has been considered to provide an undercoat layer made of a fluorocarbon thin film between the recording layer and the substrate (Japanese Patent Laid-Open No. 59-90246). The factors that determine the adhesion force between the substrate and the film material are the surface tension of the substrate surface and recording layer material, the molecular weight of the substrate surface layer, the degree of crosslinking, etc., but the smaller the adhesion force, the lower the laser beam power. can form pits in a short time. This means improved recording sensitivity,
This enables high-speed file recording and the use of inexpensive low-power semiconductor lasers. Furthermore, in order to perform high-quality recording, it is required that the formed pit shape have a clear outline and be uniform.
上記要求を満たすものとして、本発明者らは既
に、基板と記録層との間にフルオロカーボンの下
引き層を設け、かつ、該下引き層の記録層に接す
る側の表面から10nm以内の層の炭素とフツ素の
原子数比をESCA（軟Ｘ線励起光電子分光）法に
よる測定値として、炭素１に対してフツ素1.4以
上とする光学的記録用媒体を見い出した。（特願
昭60−298197、特開昭62−154343号公報参照）
（発明が解決しようとする問題点）
上記下引き層をTeを含む薄膜からなる記録媒
体に適用した場合、高感度及び高品質の記録・再
生が可能であるが、記録層と下引き層の間の付着
力が弱いために、レーザー光照射によつて溶融、
除去される物質の量が多く、形成可能な最小ピツ
トサイズに限度があり記憶密度を向上させる上で
の障害が現われた。 In order to meet the above requirements, the present inventors have already provided a fluorocarbon undercoat layer between the substrate and the recording layer, and a layer within 10 nm from the surface of the undercoat layer in contact with the recording layer. We have discovered an optical recording medium in which the atomic ratio of carbon to fluorine is 1.4 or more fluorine to 1 carbon, as measured by ESCA (soft X-ray excitation photoelectron spectroscopy). (Refer to Japanese Patent Application No. 60-298197 and Japanese Patent Application Laid-Open No. 62-154343.) (Problems to be Solved by the Invention) When the above-mentioned undercoat layer is applied to a recording medium made of a thin film containing Te, high sensitivity and high Although high-quality recording and playback is possible, the adhesion between the recording layer and the undercoat layer is weak, so it cannot be melted or regenerated by laser beam irradiation.
The amount of material removed is large, and the minimum pit size that can be formed is limited, creating obstacles to increasing storage density.
一方、表面のフツ素と炭素の原子数比が炭素１
に対して、フツ素1.4未満であるような下引き層
においては、ピツト内に記録層物質の残留物が残
存し、ピツト形状が不規則なものになる欠点があ
る。しかしながら、下引き層と記録層との間の付
着力が大きいため、ピツトサイズは小さくするこ
とが可能であり、高密度記録を行う上で有利であ
る。 On the other hand, the atomic ratio of fluorine and carbon on the surface is carbon 1
On the other hand, an undercoat layer containing less than 1.4 fluorine atoms has the disadvantage that residues of the recording layer material remain in the pits, resulting in irregular pit shapes. However, since the adhesive force between the undercoat layer and the recording layer is strong, the pit size can be reduced, which is advantageous for high-density recording.
高密度、高感度かつ高品質の記録再生を行うた
めには、下引き層と記録層との間の付着力に対し
て、上述のように一見矛盾する特性が要求され
る。 In order to perform high-density, high-sensitivity, and high-quality recording and reproduction, the adhesion force between the undercoat layer and the recording layer requires the above-mentioned seemingly contradictory properties.
（問題点を解決するための手段）
本発明者らは、フルオロカーボン薄膜に第３の
元素を添加することにより、十分な付着力を有し
ながら、一方で、高感度でかつ良好なピツト形状
が得られる下引き層を得、本発明に到達した。(Means for Solving the Problems) The present inventors have discovered that by adding a third element to a fluorocarbon thin film, it is possible to have sufficient adhesion while also achieving high sensitivity and good pit shape. The resulting undercoat layer was obtained and the present invention was achieved.
すなわち本発明の要旨は、基板上にクロロフル
オロカーボン膜からなる下引層を設け、該下引層
上に、Teを含む薄膜からなる穴あけタイプの記
録層を配置した光学的記録用媒体において、上記
下引層の記録層に接する側の表面の炭素とフツ素
の原子数比が炭素１に対してフツ素1.4未満であ
り、かつ、塩素を５〜15原子％含むことを特徴と
する光学的記録用媒体に存する。 That is, the gist of the present invention is to provide an optical recording medium in which a subbing layer made of a chlorofluorocarbon film is provided on a substrate, and a perforation type recording layer made of a thin film containing Te is disposed on the subbing layer. An optical film characterized in that the atomic ratio of carbon to fluorine on the surface of the undercoat layer in contact with the recording layer is less than 1.4 fluorine to 1 carbon, and contains 5 to 15 at.% of chlorine. Exists on a recording medium.
上記組成を有するクロロフルオロカーボン薄膜
は、例えば、ポリクロロトリフルオロエチレンの
スパツタ、フロン113（CCl2Ｆ−CClF2）などのク
ロロフルオロカーボンガスとArガスとの混合ガ
ス中でのポリテトラフルオロエチレンの反応性ス
パツタ、あるいは、ポリテトラフロオロエチレン
のスパツタ膜表面のクロロフルオロカーボンプラ
ズマ処理によつて得られる。さらに、クロロフル
オロカーボンガスをモノマーとしてプラズマ重合
することによつても得ることができる。膜厚は通
常20〜1000〓程度とされる。 A chlorofluorocarbon thin film having the above composition can be produced by, for example, sputtering polychlorotrifluoroethylene or reacting polytetrafluoroethylene in a mixed gas of chlorofluorocarbon gas such as Freon 113 (CCl 2 F-CClF 2 ) and Ar gas. It can be obtained by chlorofluorocarbon plasma treatment on the surface of polytetrafluoroethylene sputtering film or sputtering film of polytetrafluoroethylene. Furthermore, it can also be obtained by plasma polymerization using chlorofluorocarbon gas as a monomer. The film thickness is usually about 20 to 1000 mm.
上記塩素を含有するフルオロカーボン薄膜は塩
素原子がフツ素原子と同じく炭素原子の結合手を
ターミネイトするため、炭素原子の架橋が阻害さ
れて架橋度の低い構造となつており、従つて記録
層物質が溶融・除去される際の抵抗が少なくなる
ものと考えられる。一方で、塩素原子はフツ素原
子とは逆に高分子の表面張力を大きくする効果が
あるため、付着力自体はかなり大きくなる。実際
Te系記録層と本発明における下引き層との間の
付着力を簡便な引きはがし法によつて測定したと
ころ、フツ素と炭素の原子数比が同一の場合に
は、塩素原子を含む方が数倍付着力が大きいこと
が確認された。塩素を15原子％より多く含む場合
には、付着力はかえつて減少する。本発明の場合
の下引層は記録層と接する面の組成が上述の組成
とされていれば足り、下引層全体の組成を上記の
組成としなくても良い。 In the above chlorine-containing fluorocarbon thin film, the chlorine atoms terminate the bonds of carbon atoms in the same way as fluorine atoms, so crosslinking of the carbon atoms is inhibited, resulting in a structure with a low degree of crosslinking, and therefore the recording layer material It is thought that the resistance during melting and removal is reduced. On the other hand, since chlorine atoms have the effect of increasing the surface tension of polymers, contrary to fluorine atoms, the adhesion force itself becomes considerably large. actual
When the adhesion force between the Te-based recording layer and the undercoat layer of the present invention was measured by a simple peeling method, it was found that when the atomic ratio of fluorine and carbon is the same, the one containing chlorine atoms It was confirmed that the adhesion force was several times greater. If chlorine is contained in an amount greater than 15 atomic percent, the adhesion force will actually decrease. In the case of the present invention, it is sufficient that the composition of the surface of the undercoat layer in contact with the recording layer is as described above, and the composition of the entire undercoat layer does not have to be the above-mentioned composition.
（実施例）
以下、実施例をもつて、光学的情報記録媒体と
しての記録再生特性における改善効果について詳
しく述べる。(Example) Hereinafter, the effect of improving the recording and reproducing characteristics of an optical information recording medium will be described in detail using examples.
実施例 １
円板状のポリカーボネート樹脂基板（130mmφ、
厚さ1.2mm）上に、ポリクロロトリフルオロエチ
レンをターゲツトとして、Arガス圧１×10-2
Torr放電パワー100Wにてスパツタを行い、膜厚
約150〓の下引き層を形成した。この下引き層の
表面の組成をESCA法によつて測定したところ、
炭素とフツ素の原子数比は１対1.1であり、塩素
を12原子％含んでいた。該下引き層上に、記録層
としてTeをArとSeF6混合ガス中でスパツタし、
400〓のTe−SeF6系媒体（Se15at％、F10at％、
残部Te）を形成した。上記の光学的記録用媒体
に対し、以下のような条件で記録・再生特性の評
価を行つた。円板状基板は1800rpmで回転させ、
回転軸からの半径約30mmのトラツクに対し、波長
830nmのGaAs半導体レーザーで記録、再生を行
つた。記録は1.0MHz、デユーテイー50％のパル
ス光にて行つた。Example 1 Disc-shaped polycarbonate resin substrate (130mmφ,
Ar gas pressure of 1×10 -2 was applied onto polychlorotrifluoroethylene (1.2 mm thick) as a target.
Sputtering was performed with a Torr discharge power of 100 W to form an undercoat layer with a thickness of about 150 mm. When the composition of the surface of this undercoat layer was measured by the ESCA method, it was found that
The atomic ratio of carbon to fluorine was 1:1.1, and it contained 12 at.% of chlorine. On the undercoat layer, Te is sputtered as a recording layer in a mixed gas of Ar and SeF6 ,
400〓 of Te-SeF 6 -based media (Se15at%, F10at%,
The remainder Te) was formed. The recording and reproducing characteristics of the optical recording medium described above were evaluated under the following conditions. The disc-shaped substrate is rotated at 1800 rpm,
For a track with a radius of approximately 30 mm from the rotation axis, the wavelength
Recording and playback were performed using an 830nm GaAs semiconductor laser. Recording was performed using pulsed light of 1.0 MHz and duty of 50%.
Ｃ／Ｎ比（Carrier to noise ratio）の記録パ
ワー依存性を第１図ａに示す。Ｃ／Ｎ比は55dB
以上で、記録ワパーの広い範囲にわたつて、安定
な特性を示す。また、SEM観察を行つたところ、
ピツト内残留物はほとんど見られなかつた。 The dependence of the C/N ratio (Carrier to noise ratio) on the recording power is shown in FIG. 1a. C/N ratio is 55dB
The above shows stable characteristics over a wide range of recording wipers. In addition, when performing SEM observation,
Almost no residue was observed in the pit.
比較例 １
第１図中、ｂ，ｃは、それぞれ炭素とフツ素の
原子数比が１対1.5及び１対1.25であるポリテト
ラフルオロエチレンのスパツタ膜上に実施例１と
同様の記録層を形成した場合のＣ／Ｎ比の記録パ
ワー依存性を示す。また、同図中ｄは下引き層な
しで、ポリカーボネート樹脂基板上に直接記録層
を形成した場合である。さらに、同図中ｅは、
Arとフロン113との混合ガス中でポリクロロトリ
フルオロエチレンの反応性スパツタを行い、炭素
とフツ素の原子数が１対0.85で塩素を19原子％含
む膜を形成し、下引き層とした場合である。Comparative Example 1 In Fig. 1, b and c indicate the same recording layer as in Example 1 on a sputtered film of polytetrafluoroethylene in which the atomic ratio of carbon to fluorine is 1:1.5 and 1:1.25, respectively. The dependence of the C/N ratio on the recording power when formed is shown. Further, d in the figure shows the case where the recording layer was directly formed on the polycarbonate resin substrate without an undercoat layer. Furthermore, e in the same figure is
Reactive sputtering of polychlorotrifluoroethylene was performed in a mixed gas of Ar and Freon 113 to form a film containing 19 at% chlorine with a ratio of carbon and fluorine atoms of 1:0.85, which was used as an undercoat layer. This is the case.
炭素とフツ素の原子数比が高いｂの場合、塩素
含有量が多過ぎるｅの場合には、記録パワーの増
加に伴い急激にＣ／Ｎ比が低下する。これは、
SEM観察の結果、記録パワーの増加に伴い、ピ
ツトサイズが急激に大きくなつてしまうためであ
ることがわかつた。一方、ｃやｄの場合にはピツ
トサイズは安定であるが、ピツト内残留物が多
く、ピツトの輪郭にも乱れが多いために、全体と
して低いＣ／Ｎ比しか得られなかつた。 In the case b where the atomic ratio of carbon to fluorine is high, and in the case e where the chlorine content is too high, the C/N ratio rapidly decreases as the recording power increases. this is,
As a result of SEM observation, it was found that this is because the pit size increases rapidly as the recording power increases. On the other hand, in the case of c and d, although the pit size is stable, there is a lot of residue in the pit and the contour of the pit is also disordered, so that only a low C/N ratio can be obtained as a whole.
（発明の効果）
本発明によれば、高感度であると同時に、高密
度で高品質な記録・再生が可能な光学的記録用媒
体が実現できる。(Effects of the Invention) According to the present invention, it is possible to realize an optical recording medium that is not only highly sensitive but also capable of high-density and high-quality recording and reproduction.
第１図は、実施例及び比較例における記録媒体
のＣ／Ｎ比の記録パワー依存性を示す。
図中ａは実施例、ｂ〜ｅは比較例に関するもの
である。
FIG. 1 shows the recording power dependence of the C/N ratio of the recording medium in the example and the comparative example. In the figure, a indicates an example, and b to e relate to a comparative example.
Claims (1)
下引き層を設け該下引き層上に、Teを含む薄膜
からなる穴あけタイプの記録層を配置した光学的
記録用媒体において、上記下引き層の記録層に接
する側の表面の炭素とフツ素の原子数比が炭素１
に対してフツ素1.4未満であり、かつ、塩素を５
〜15原子％含むことを特徴とする光学的記録用媒
体。 ２ 上記穴あけタイプの記録層が、Teを含む金
属をターゲツト材としてフツ化セレンガスとAr
ガスとの混合ガス中において反応性スパツタリン
グすることにより形成した、Te及びSeを含む堆
積膜であることを特徴とする特許請求の範囲第１
項記載の光学的記録用媒体。[Scope of Claims] 1. An optical recording medium in which an undercoat layer made of a chlorofluorocarbon film is provided on a substrate, and a perforation type recording layer made of a thin film containing Te is disposed on the undercoat layer. The atomic ratio of carbon to fluorine on the surface of the pulling layer in contact with the recording layer is carbon 1.
Fluorine content is less than 1.4 and chlorine content is less than 5%.
An optical recording medium characterized by containing ~15 atom%. 2 The above-mentioned drilling type recording layer is made of selenium gas fluoride and Ar using a metal containing Te as a target material.
Claim 1, characterized in that it is a deposited film containing Te and Se formed by reactive sputtering in a mixed gas with
Optical recording medium described in Section 1.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61302607A JPS63155443A (en) | 1986-12-18 | 1986-12-18 | optical recording medium |
| EP87301046A EP0242942B1 (en) | 1986-04-24 | 1987-02-05 | Optical recording medium and process for producing the same |
| CA000529093A CA1258974A (en) | 1986-04-24 | 1987-02-05 | Optical recording medium and process for producing the same |
| KR1019870000966A KR910009072B1 (en) | 1986-04-24 | 1987-02-05 | Optical recording carrier and manufacturing process therefor |
| DE8787301046T DE3776386D1 (en) | 1986-04-24 | 1987-02-05 | OPTICAL RECORDING MEDIUM AND METHOD FOR THE PRODUCTION THEREOF. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61302607A JPS63155443A (en) | 1986-12-18 | 1986-12-18 | optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63155443A JPS63155443A (en) | 1988-06-28 |
| JPH0444815B2 true JPH0444815B2 (en) | 1992-07-22 |
Family
ID=17911018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61302607A Granted JPS63155443A (en) | 1986-04-24 | 1986-12-18 | optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63155443A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405450A3 (en) * | 1989-06-30 | 1991-08-21 | Kabushiki Kaisha Toshiba | Data recording medium and method of manufacturing the same |
-
1986
- 1986-12-18 JP JP61302607A patent/JPS63155443A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63155443A (en) | 1988-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |