JPH0444940B2 - - Google Patents
Info
- Publication number
- JPH0444940B2 JPH0444940B2 JP21246583A JP21246583A JPH0444940B2 JP H0444940 B2 JPH0444940 B2 JP H0444940B2 JP 21246583 A JP21246583 A JP 21246583A JP 21246583 A JP21246583 A JP 21246583A JP H0444940 B2 JPH0444940 B2 JP H0444940B2
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- reflectance
- light beam
- measured
- parallel light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 101700004678 SLIT3 Proteins 0.000 description 2
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- RRLHMJHRFMHVNM-BQVXCWBNSA-N [(2s,3r,6r)-6-[5-[5-hydroxy-3-(4-hydroxyphenyl)-4-oxochromen-7-yl]oxypentoxy]-2-methyl-3,6-dihydro-2h-pyran-3-yl] acetate Chemical compound C1=C[C@@H](OC(C)=O)[C@H](C)O[C@H]1OCCCCCOC1=CC(O)=C2C(=O)C(C=3C=CC(O)=CC=3)=COC2=C1 RRLHMJHRFMHVNM-BQVXCWBNSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/005—Testing of reflective surfaces, e.g. mirrors
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Description
【発明の詳細な説明】
技術分野
この発明は、光学結像素子（ダハミラーレンズ
アレイ）に使用されるダハミラーアレイ、複写機
に使用されるスリツトミラー（スリツト走査光学
系に使用される矩形状のミラー）の反射率分布を
測定する反射率測定装置に関する。Detailed Description of the Invention Technical Field The present invention relates to roof mirror arrays used in optical imaging elements (roof mirror lens arrays) and slit mirrors used in copying machines (rectangular shaped mirrors used in slit scanning optical systems). The present invention relates to a reflectance measuring device for measuring the reflectance distribution of a mirror.
従来技術
従来、ダハミラーアレイ、スリツトミラー等の
反射率測定（蒸着等により形成した反射膜の濃度
ムラにより反射率が不均一になつているのを調べ
るためなされる）は、分光光度計によつてなされ
ていた。第１図および第２図を参照して従来の反
射率測定装置を説明する。第１図は従来装置（分
光光度計）の一構成例の光学系統計図である。光
源（Ｗランプ１ａまたはD2ランプ１ｂ）から出
た光は光源切換（自動切換）ミラー２によつて反
射され、分光器の入射スリツト３上に像を作る。
平面ミラー４によつて反射され入射スリツト３を
通つた光束は、コリメータミラー５によつて略平
行光線になり石英プリズム６に当たる。そして、
プリズム６で分散された光束は再びコリメータミ
ラー５で反射され、出射スリツト７上に結像す
る。 Conventional technology Conventionally, reflectance measurements of roof mirror arrays, slit mirrors, etc. (done to check for non-uniform reflectance due to uneven density of reflective films formed by vapor deposition, etc.) have been carried out using spectrophotometers. It had been done. A conventional reflectance measuring device will be explained with reference to FIGS. 1 and 2. FIG. 1 is a statistical diagram of an optical system of a configuration example of a conventional device (spectrophotometer). The light emitted from the light source (W lamp 1a or D2 lamp 1b) is reflected by the light source switching (automatic switching) mirror 2 and forms an image on the entrance slit 3 of the spectrometer.
The light beam reflected by the plane mirror 4 and passing through the entrance slit 3 is turned into a substantially parallel beam by the collimator mirror 5 and impinges on the quartz prism 6. and,
The light beam dispersed by the prism 6 is reflected again by the collimator mirror 5 and forms an image on the exit slit 7.
出射スリツト７からの光束はセクターミラー
（分光器）８で半回転ごとに直進・反射を繰り返
し、試料室に導かれる。セクターミラー８によつ
て分けられた２つの光束は、試料側および対照側
を交互に通過し、試料側および対照側のミラー９
ａ，９ｂで反射されて、セクターミラー１０を通
つて同一の光路から検知器に入射される。 The light beam from the exit slit 7 is repeatedly directed and reflected every half turn by a sector mirror (spectroscope) 8, and is guided to the sample chamber. The two light beams separated by the sector mirror 8 pass alternately through the sample side and the contrast side, and pass through the mirror 9 on the sample side and the contrast side.
a, 9b, and enter the detector from the same optical path through the sector mirror 10.
なお、試料室の蓋の開閉と連動してマイクロス
イツチが動作し、試料室の蓋を開けたときに過大
な光が検知器に入射し、検知器からの出力が大き
くなるのを防止する。また、図示しないペンサー
ボ増幅器等も、試料室の蓋を開けると動作が停止
する。試料の透過率に比例した光信号は試料室を
通つて受光室に導かれ、検知器（ホトマル１１ま
たはpbs１２）で電気信号に変換される。なお、
ホトマル１１かpbs１２かの検知器の切換は、検
知器切換ミラー１３より行なう。 The microswitch operates in conjunction with the opening and closing of the sample chamber lid to prevent excessive light from entering the detector and increasing the output from the detector when the sample chamber lid is opened. Furthermore, a pen servo amplifier (not shown), etc., also stops operating when the lid of the sample chamber is opened. An optical signal proportional to the transmittance of the sample is guided through the sample chamber to the light receiving chamber, and converted into an electrical signal by a detector (photomultiple 11 or pbs 12). In addition,
The detector switching between the photomultiplier 11 and the pbs 12 is performed by a detector switching mirror 13.
第２図は第１図に示す装置で検知された電気信
号を処理するための装置の電気信号系統図であ
る。なお、以下の図面の説明において、第１図に
示されたものと同一要素は同一符号で示してあ
る。ホトマル高圧電源１４に接続されているホト
マル１１から出力された電流信号は、主増幅器１
５で増幅されて電圧信号となる。検知器切換ミラ
ー１３が切換つてpbs１２から電流信号が出力さ
れるときは、前置増幅器１６を経て主増幅器１５
で増幅されて電圧信号となる。そして、この電圧
信号は、ゲート信号発生回路１７から与えられる
ゲート信号によつて対照、試料、ゼロ信号の３つ
に分けられ、トランジスタTr1〜Tr3を介して対
照側ホールド回路１８、試料側ホールド回路１
９、ゼロホールド回路２０で電圧ホールドされ、
直流電圧出力となる。 FIG. 2 is an electrical signal system diagram of a device for processing electrical signals detected by the device shown in FIG. In the following description of the drawings, the same elements as those shown in FIG. 1 are designated by the same reference numerals. The current signal output from the photomul 11 connected to the photomul high voltage power supply 14 is transmitted to the main amplifier 1.
5 and becomes a voltage signal. When the detector switching mirror 13 switches and a current signal is output from the pbs 12, it passes through the preamplifier 16 to the main amplifier 15.
is amplified and becomes a voltage signal. This voltage signal is divided into three signals, a control signal, a sample signal, and a zero signal, by the gate signal given from the gate signal generation circuit 17, and is sent to the control side hold circuit 18 and the sample side via transistors Tr1 to Tr3 . Hold circuit 1
9. The voltage is held by the zero hold circuit 20,
DC voltage output.
ゼロホールド回路２０の出力は主増幅器１５の
出力側に帰還される。対照側ホールド回路１８に
はドリフト補正回路２１が接続されており、また
その出力はスリツトサーボ回路２２を経てスリツ
トモータ２３に帰還され、スリツト幅が制御され
る。これにより、検知器への入射光量を増減させ
て、対照側のホールド電圧値が一定になるよう
（例えば3V）制御している。対照側および試料側
のホールド電圧は割算回路２４与えられ、透過率
に比例した周波数の信号が発生させられる。この
周波数は周波数／電圧変換され、吸光度変換回路
２５、透過率変換回路２６で吸光度または透過率
に対応する電圧出力となり、記録計２７で記録表
示される。 The output of the zero hold circuit 20 is fed back to the output side of the main amplifier 15. A drift correction circuit 21 is connected to the opposite hold circuit 18, and its output is fed back to the slit motor 23 via a slit servo circuit 22 to control the slit width. As a result, the amount of light incident on the detector is increased or decreased to control the hold voltage value on the contrast side to be constant (for example, 3V). The hold voltages on the control side and the sample side are applied to a divider circuit 24, and a signal with a frequency proportional to the transmittance is generated. This frequency is subjected to frequency/voltage conversion, and the absorbance conversion circuit 25 and the transmittance conversion circuit 26 output a voltage corresponding to the absorbance or transmittance, which is recorded and displayed by the recorder 27.
上記のようにして、被測定ミラーの反射率を測
定表示することができる。しかし、従来装置では
単一面（ミラー）の波長別反射率の測定は可能で
あるが、ダハミラーアレイ、スリツトミラー（以
下これらミラーの総称を「直列型ミラー」とす
る）の如く試料が大きい場合は、測定が困難であ
る。すなわち、直列型ミラーの列方向の長さは例
えば対象とする原稿サイズがA3短手であるとき
は300mm程度にもなるため、第１図に示す光学系
でこれの反射率を測定するのは困難である。ま
た、光学系統、電気系統共に構成が複雑で、装置
が高価になるという欠点がある。さらに、操作性
が良くなく、測定時間が長くなつてしまうという
欠点がある。 In the manner described above, the reflectance of the mirror to be measured can be measured and displayed. However, with conventional equipment, it is possible to measure the reflectance of a single surface (mirror) by wavelength, but when the sample is large, such as a roof mirror array or a slit mirror (hereinafter these mirrors are collectively referred to as "serial mirrors"), , difficult to measure. In other words, the length of the serial mirror in the column direction is about 300 mm when the target document size is A3 short side, so it is difficult to measure the reflectance of this with the optical system shown in Figure 1. Have difficulty. Furthermore, the configuration of both the optical system and the electrical system is complicated, making the device expensive. Furthermore, there are disadvantages in that the operability is not good and the measurement time is long.
目 的
この発明は、上記の様な従来技術の欠点を克服
するためになされたもので、複写機等に使用され
るスリツトミラーおよび光学結像素子（DMLA）
に使用されるダハミラーアレイの反射率分布を、
全面にわたつて迅速に測定することができ、かつ
操作性が良好で構成が簡素で低コストの反射率測
定装置を提供することを目的とする。 Purpose This invention was made to overcome the drawbacks of the prior art as described above.
The reflectance distribution of the roof mirror array used in
It is an object of the present invention to provide a reflectance measuring device that can quickly measure the entire surface, has good operability, has a simple configuration, and is inexpensive.
構 成
以下、添付図面の第３図ないし第８図を参照し
て、この発明の実施例を説明する。第３図は一実
施例の光学系の構成図である。ハロゲンランプ等
のインコヒーレントな白色光を発する光源３１
と、一定幅の開口（例えばスリツト、円形の穴な
ど）を有するチヤート３２との間には、所要の単
色光を得るための赤外カツトフイルタ３３および
干渉フイルタ３４が設けられ、チヤート３２の開
口部は所要の単色光で照射される。チヤート３２
に関して光源３１と反対側には、チヤート３２の
開口部を焦点面とするコリメータレンズ３５が設
けられ、開口部からの光束はコリメータレンズ３
５によつて平行光束となつて直列型ミラー（ダハ
ミラーアレイ）３６を照明し、その反射光束がビ
ームスプリツタ３７により反射され、結像レンズ
３８により焦点面に配設された光電変換素子３９
上に結像する。なお、ダハミラーアレイ３６の前
面には遮光板４０が設けられ、他のダハ面に光が
届かないようにしてある。 Configuration Hereinafter, embodiments of the present invention will be described with reference to FIGS. 3 to 8 of the accompanying drawings. FIG. 3 is a configuration diagram of an optical system of one embodiment. A light source 31 that emits incoherent white light such as a halogen lamp
An infrared cut filter 33 and an interference filter 34 for obtaining the required monochromatic light are provided between the opening of the chart 32 and the chart 32 having an opening of a certain width (for example, a slit, a circular hole, etc.). is illuminated with the required monochromatic light. chart 32
A collimator lens 35 whose focal plane is the opening of the chart 32 is provided on the opposite side of the light source 31, and the light flux from the opening is directed to the collimator lens 3.
5 into a parallel light beam that illuminates a serial mirror (roof mirror array) 36, the reflected light beam is reflected by a beam splitter 37, and a photoelectric conversion element 39 disposed on the focal plane by an imaging lens 38.
image on top. Note that a light shielding plate 40 is provided on the front surface of the roof mirror array 36 to prevent light from reaching other roof surfaces.
第４図は第３図に示すダハミラーアレイ３６の
走査機構の構成図である。列方向のダハ面の繰り
返し単位長がΔlのダハミラーアレイ３６は、コ
イルばね４１に挟まれて保持部材４２により保持
され、保持部材４２は移動部材４３に固定され
る。そして、ステツピングモータ４４によつて回
転できるようにしたボールねじ４５によつて、列
方向に走査できるようにする。このようにする
と、−のダハ面の反射率の測定が終了したときに
ステツピングモータ４４を所定角だけ回転させ
（ボールねじ４５を所定角だけ回転させ）、ダハミ
ラーアレイ３６をΔlだけ移動させて次のダハ面
の測定を開始するというように、ステツプ的に移
動させて繰り返し反射率を測定することができ
る。 FIG. 4 is a configuration diagram of the scanning mechanism of the roof mirror array 36 shown in FIG. 3. The roof mirror array 36 whose repetition unit length of the roof surface in the column direction is Δl is held between coil springs 41 and held by a holding member 42 , and the holding member 42 is fixed to a moving member 43 . A ball screw 45 that can be rotated by a stepping motor 44 enables scanning in the column direction. In this way, when the measurement of the reflectance of the - roof surface is completed, the stepping motor 44 is rotated by a predetermined angle (the ball screw 45 is rotated by a predetermined angle), and the roof mirror array 36 is moved by Δl. It is possible to move the reflectance in steps and measure the reflectance repeatedly, such as starting measurement of the next roof surface.
第１図および第２図に示す実施例による反射率
の測定は次の手順により行なう。まず、反射率既
知のミラーを測定面に固着し、その光強度を直線
性のある光電変換素子で読み取り、この値をメモ
リ等に記憶しておく（上記操作は逐次行なう必要
はなく、定期校正として行なえばよい）。次に、
直列型ミラーの光強度を測定したのち、記憶値と
測定値との割り算を行なう。 Measurement of reflectance according to the embodiment shown in FIGS. 1 and 2 is carried out by the following procedure. First, fix a mirror with a known reflectance on the measurement surface, read the light intensity with a linear photoelectric conversion element, and store this value in a memory etc. (The above operation does not need to be performed sequentially, and regular calibration is required. ). next,
After measuring the light intensity of the series mirror, the stored value and the measured value are divided.
いま、既知のミラーの反射率をRo、この光強
度に対応した光電変換出力をLoとし、直列型ミ
ラーのｉ番目の光電変換出力をLiとすると、ｉ番
目の面の反射率Riは
Ri＝Ro・Li／Lo ……(1)
によつて与えられる。但し、式(1)は平面ミラーの
場合であつて、ダハ面の場合には２面の合成反射
率となる。 Now, if the known reflectance of the mirror is Ro, the photoelectric conversion output corresponding to this light intensity is Lo, and the i-th photoelectric conversion output of the series mirror is Li, then the reflectance Ri of the i-th surface is Ri= Ro・Li/Lo... given by (1). However, equation (1) applies to a plane mirror, and in the case of a roof surface, it is the combined reflectance of the two surfaces.
ところで、光電変換素子は単一の面積を有する
ものでもよいが、CCD、PDA等の固体撮像素子
を用いると、ミラーの平面度等に関する測定も同
時に行なうことができる。 Incidentally, the photoelectric conversion element may have a single area, but if a solid-state imaging element such as a CCD or PDA is used, measurements regarding the flatness of the mirror, etc. can be performed at the same time.
第５図は第３図の光電変換素子３９として固体
撮像素子を用いた場合の、画信号を模式的に説明
する説明図である。図においてｎは固体撮像素子
の画素数を示しｊ（ｊ＝１，２…，ｎ）は画素の
番号を示している。この場合には、式(1)のLi（直
列型ミラーのｉ番目の光電変換出力）は
Li＝ｎ
〓
Ｌ
ｊ＝１Vi ……(2)
によつて与えられる。従つて、直列型ミラーの反
射率を求めるためには、まず式(2)によつてLiを求
め、次に式(1)によつてRiを求め、ｉを所要数だ
け変化させるようにステツピングモータ１３を制
御すればよいことになる。 FIG. 5 is an explanatory diagram schematically illustrating an image signal when a solid-state image sensor is used as the photoelectric conversion element 39 in FIG. 3. FIG. In the figure, n indicates the number of pixels of the solid-state image sensor, and j (j=1, 2, . . . , n) indicates the pixel number. In this case, Li (the i-th photoelectric conversion output of the series mirror) in equation (1) is given by Li=n 〓 L j=1 Vi (2). Therefore, in order to find the reflectance of a series mirror, first find Li using equation (2), then Ri using equation (1), and step by step to change i by the required number. All that is required is to control the ping motor 13.
第６図は固体撮像素子の出力信号によつて式(2)
のLiを演算するための、デイジタル方式の演算装
置のブロツク図である。固体撮像素子３９′の出
力信号はサンプルホールド回路５１でホールドさ
れたのち、Ａ／Ｄ変換器５２でデイジタル信号に
変換され、画素ごとの信号がRAM５３に書き込
まれる。演算回路５４は式(2)に基づいてRAM５
３に記憶された情報を演算し、結果（Liについて
の情報）を入力ポート５５を介してCPU５６に
与える。こうして、式(1)に基づく反射率の測定が
なされる。なお、CPU５６は出力ポート５７を
介してタイミング発生回路５８およびモータ駆動
回路５９の制御も行なつており、タイミング発生
回路５８からのタイミングパルスにより固体撮像
素子駆動回路６０、サンプルホールド回路５１、
Ａ／Ｄ変換器５２、RAM５３および演算回路５
４の動作の同期がとられている。また、モータ駆
動回路５９はステツピングモータ４４の動作を制
御する。 Figure 6 shows equation (2) using the output signal of the solid-state image sensor.
FIG. 2 is a block diagram of a digital arithmetic device for calculating Li of FIG. The output signal of the solid-state image sensor 39' is held in a sample and hold circuit 51, and then converted into a digital signal by an A/D converter 52, and a signal for each pixel is written into a RAM 53. The arithmetic circuit 54 uses the RAM 5 based on equation (2).
3 and provides the result (information about Li) to the CPU 56 via the input port 55. In this way, the reflectance is measured based on equation (1). Note that the CPU 56 also controls the timing generation circuit 58 and the motor drive circuit 59 via the output port 57, and the timing pulses from the timing generation circuit 58 cause the solid-state image sensor drive circuit 60, sample hold circuit 51,
A/D converter 52, RAM 53 and arithmetic circuit 5
4 operations are synchronized. Further, the motor drive circuit 59 controls the operation of the stepping motor 44.
第７図は固体撮像素子の出力信号によつて式(2)
のLiを演算するための、アナログ方式の演算装置
のブロツク図である。固体撮像素子３９′の出力
信号は、アナログスイツチ６１を介して積分回路
６２に与えられ、ここで式(2)の逐算によりLiが求
められ、Ａ／Ｄ変換されてCPU５６に取り込ま
れ、式(1)により反射率が求められる。 Figure 7 shows equation (2) using the output signal of the solid-state image sensor.
FIG. 2 is a block diagram of an analog calculation device for calculating Li of . The output signal of the solid-state image sensor 39' is given to the integration circuit 62 via the analog switch 61, where Li is obtained by step-by-step calculation of equation (2), A/D converted, and taken into the CPU 56, and the result is expressed by equation (2). The reflectance is determined by (1).
第８図は第３図ないし第７図に示す実施例によ
つて直列型ミラーの反射率を測定したときの結果
を示す図である。反射率が列方向に不均一である
ときは、第８図ａの如く測定値（反射率）が変動
する。これに対し、反射率が列方向に不均一であ
るときは第８図ｂの如くになる。 FIG. 8 is a diagram showing the results of measuring the reflectance of series mirrors using the embodiments shown in FIGS. 3 to 7. When the reflectance is non-uniform in the column direction, the measured value (reflectance) fluctuates as shown in FIG. 8a. On the other hand, when the reflectance is non-uniform in the column direction, the result is as shown in FIG. 8b.
効 果
上記の如くこの発明によれば、直列型ミラーの
反射率分布を迅速かつ容易に測定することがで
き、操作性に優れ、かつ光学系の構成が簡素で安
価に製作することのできる反射率測定装置を得る
ことができる。 Effects As described above, according to the present invention, the reflectance distribution of a series mirror can be measured quickly and easily, the optical system has a simple configuration, and can be manufactured at low cost. A rate measuring device can be obtained.
また、光学結像素子（セルホツクレンズアレ
イ、DMLA）の光量の不均一測定に利用するこ
とができ、光電変換素子として固体撮像素子を用
いるときには、ミラーのMTF測定機として利用
することもできる。 It can also be used to measure the non-uniformity of the light intensity of an optical imaging device (self-cleaning lens array, DMLA), and when a solid-state imaging device is used as a photoelectric conversion device, it can also be used as a mirror MTF measurement device.
第１図は従来装置の一構成例の光学系統図、第
２図は第１図に示す構成例の電気系統図、第３図
はこの発明の一実施例の光学系の構成図、第４図
は第３図の実施例の走査機構の構成図、第５図は
第３図の光電変換素子を固体撮像素子としたとき
の画信号の説明図、第６図および第７図は第３図
ないし第５図に示す実施例の信号を処理する演算
装置のブロツク図、第８図は第３図ないし第７図
に示す実施例による測定結果の説明図である。
３１……光源、３２……チヤート、３３……赤
外カツトフイルタ、３４……干渉フイルタ、３５
……コリメータレンズ（平行光束射出手段）、３
６……ダハミラーアレイ（被測定ミラー）、３７
……ビームスプリツタ（光路分割手段）、３８…
…結像レンズ（コリメータ光学手段）、３９……
光電変換素子（光電変換手段）、４０……遮光板、
｛４１……コイルばね、４２……保持部材、４３
……移動部材、４４……ステツピングモータ、４
５……ボールねじ｝移動手段、３９′……固体撮
像素子、｛５４……演算回路、５６……CPU｝演
算手段。
FIG. 1 is an optical system diagram of a configuration example of a conventional device, FIG. 2 is an electrical system diagram of the configuration example shown in FIG. 1, FIG. 3 is a configuration diagram of an optical system of an embodiment of the present invention, and FIG. The figure is a configuration diagram of the scanning mechanism of the embodiment shown in FIG. 3, FIG. 5 is an explanatory diagram of an image signal when the photoelectric conversion element of FIG. FIG. 8 is a block diagram of an arithmetic device for processing signals according to the embodiment shown in FIGS. 3 to 5, and FIG. 8 is an explanatory diagram of measurement results according to the embodiment shown in FIGS. 3 to 7. 31...Light source, 32...Chart, 33...Infrared cut filter, 34...Interference filter, 35
... Collimator lens (parallel beam emitting means), 3
6... Roof mirror array (mirror to be measured), 37
...beam splitter (optical path splitting means), 38...
...Imaging lens (collimator optical means), 39...
Photoelectric conversion element (photoelectric conversion means), 40... light shielding plate,
{41...Coil spring, 42...Holding member, 43
...Moving member, 44...Stepping motor, 4
5... ball screw} moving means, 39'... solid-state image sensor, {54... arithmetic circuit, 56... CPU} arithmetic means.
Claims (1)
行光束射出手段と、前記平行光束の光路中に設け
られた光路分割手段と、前記被測定ミラーで反射
された後に前記光路分割手段で光路分割された平
行光束の光路中に設けられるコリメータ光学手段
と、該コリメータ光学手段の焦点面に設けられた
光電変換手段と、所定の基準値と前記光電変換手
段の出力の比に基づいて前記被測定ミラーの反射
率を算出する演算手段とを備える反射率測定装
置。 ２ 平行光束射出手段は、インコヒーレントな光
を発する光源と、一定の開口のチヤートと、該チ
ヤートを焦点面とするコリメータレンズとを有す
る特許請求の範囲第１項記載の反射率測定装置。 ３ 平行光束射出手段は、光源とチヤートの間に
赤外線カツトフイルタおよび干渉フイルタを有す
る特許請求の範囲第２項記載の反射率測定装置。 ４ 被測定ミラーは、直列型ミラーであつて列方
向に移動させる移動手段を有する特許請求の範囲
第１項ないし第３項のいずれかに記載の反射率測
定装置。 ５ 光電変換手段は、固体撮像素子である特許請
求の範囲第１項ないし第４項のいずれかに記載の
反射率測定装置。[Scope of Claims] 1. A parallel light beam emitting device that emits a parallel light beam toward the mirror to be measured, an optical path splitting device provided in the optical path of the parallel light beam, and a parallel light beam that separates the optical path after being reflected by the mirror to be measured. A collimator optical means provided in the optical path of the parallel light beam split by the splitting means, a photoelectric conversion means provided at the focal plane of the collimator optical means, and a ratio of the output of the photoelectric conversion means to a predetermined reference value. a calculation means for calculating the reflectance of the mirror to be measured based on the reflectance of the mirror to be measured. 2. The reflectance measuring device according to claim 1, wherein the parallel light beam emitting means includes a light source that emits incoherent light, a chart with a fixed aperture, and a collimator lens having the chart as a focal plane. 3. The reflectance measuring device according to claim 2, wherein the parallel beam emitting means includes an infrared cut filter and an interference filter between the light source and the chart. 4. The reflectance measuring device according to any one of claims 1 to 3, wherein the mirror to be measured is a serial mirror and has a moving means for moving it in the column direction. 5. The reflectance measuring device according to any one of claims 1 to 4, wherein the photoelectric conversion means is a solid-state image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212465A JPS60105935A (en) | 1983-11-14 | 1983-11-14 | Reflectance measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212465A JPS60105935A (en) | 1983-11-14 | 1983-11-14 | Reflectance measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60105935A JPS60105935A (en) | 1985-06-11 |
| JPH0444940B2 true JPH0444940B2 (en) | 1992-07-23 |
Family
ID=16623088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58212465A Granted JPS60105935A (en) | 1983-11-14 | 1983-11-14 | Reflectance measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60105935A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109070373A (en) * | 2016-04-18 | 2018-12-21 | 株式会社瑞光 | The cutting-off method and device of the epidermis of blank volume |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1333273A4 (en) * | 2000-11-10 | 2011-04-06 | Arkray Inc | Measuring method and instrument comprising image sensor |
| DE10225820B4 (en) * | 2002-06-11 | 2004-08-12 | Bundesrepublik Deutschland, vertreten durch das Bundesministerium der Verteidigung, dieses vertreten durch den Präsidenten des Bundesamtes für Wehrtechnik und Beschaffung | Arrangement for the optical inspection of angle mirrors |
-
1983
- 1983-11-14 JP JP58212465A patent/JPS60105935A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109070373A (en) * | 2016-04-18 | 2018-12-21 | 株式会社瑞光 | The cutting-off method and device of the epidermis of blank volume |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60105935A (en) | 1985-06-11 |
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