JPH0446410B2 - - Google Patents
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- Publication number
- JPH0446410B2 JPH0446410B2 JP22075585A JP22075585A JPH0446410B2 JP H0446410 B2 JPH0446410 B2 JP H0446410B2 JP 22075585 A JP22075585 A JP 22075585A JP 22075585 A JP22075585 A JP 22075585A JP H0446410 B2 JPH0446410 B2 JP H0446410B2
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- JP
- Japan
- Prior art keywords
- liquid crystal
- state
- voltage
- pair
- angle
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 13
- 239000004990 Smectic liquid crystal Substances 0.000 claims description 11
- 210000004027 cell Anatomy 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- -1 biphenyl ester Chemical class 0.000 description 3
- 230000003098 cholesteric effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Description
〔産業上の利用分野〕
本発明は、液晶表示素子や液晶−光シヤツタア
レイ等に適用する液晶素子に関し、詳しくは液晶
分子の初期配向状態を改善することにより、表示
ならびに駆動特性を改善した液晶装置に関する。
〔従来の技術〕
これまで、双安定性を有する液晶素子の使用が
クラーク(Clark)およびラガウエル
(Lagerwall)により提案されている(特開昭56
−107216号公報、米国特許第4367924号明細書
等)。この双安定性を有する液晶としては、一般
に、カイラルスメクチイツクC相(SmC*)又
はH相(SmH*)を有する強誘電性液晶が用い
られる。この液晶は電界に対して第1の光学的安
定状態と第2の光学安定状態からなる双安定状態
を有し、従つて従来のTN型の液晶で用いられた
光学変調素子とは異なり、例えば一方の電界ベク
トルに対して第1の光学的安定状態に液晶が配向
し、他方の電界ベクトルに対しては第2の光学的
安定状態に液晶が配向される。またこの型の液晶
は、加えられる電界に応答して、極めて速やかに
上記2つの安定状態のいずれかを取り、且つ電界
の印加のないときはその状態を維持する性質を有
する。このような性質を利用することにより、上
述した従来のTN型素子の問題点の多くに対し
て、かなり本質的な改善が得られる。
〔発明が解決する問題点〕
前述した強誘電性液晶は、均一な配向性能を得
る上で、基板表面に一軸性の配向処理を施す方法
が知られている。この一軸性の配向処理法として
は、基板表面をビーロード、布や紙で一方向にラ
ビングする方法あるいは基板表面にSiOやSiO2を
斜方蒸着する方法などが挙げられる。
基板表面に適正な一軸性の配向処理を処するこ
とにより、初期配向においては、ある特定化され
た双安定状態が達成された。しかし、その初期状
態では下述するように、クロスニコル下の光学変
調実験で、コントラストが悪く、また透過光量が
小さく実用上問題があつた。
〔問題点を解決するための手段〕及び〔作用〕
本発明者らの実験によれば、前述の問題点が、
前述した強誘電性液晶素子、特に一軸性配向処理
を施した強誘電性液晶素子における基板に対して
垂直なスメクチツク相の層のねじれに帰因してい
ることを見い出した。すなわち、上下基板に隣接
しているスメクチツク相の液晶分子が角度αで交
差し、かかる角度αをもつてスメクチツク相の層
がねじれているためであることが判明した。
従つて、本発明の目的は、前述の問題点を解消
した強誘電性液晶装置を提供することとある。
すなわち、本発明は、
a 間隔をおいて配置した一対の基板、該一対の
基板の内側にそれぞれ設けた一対の電極及び該
一対の基板間に配置され、且つ無電界時に互い
に異なる2つの配向状態を発現し、該2つの配
向状態のそれぞれの平均分子軸のなす角度が2θ
である第1状態のカイラルスメクチツク液晶
に、該液晶の閾値電圧より大きい交流電圧を印
加することにより、該交流電圧の印加を解除し
た後の無電界時における前記互いに異なる2つ
の配向状態のそれぞれの平均分子軸のなす角度
が前記2θより大きい角度2θ′である第2状態の
カイラルスメクチツク液晶を生成してなるカイ
ラルスメクチツク液晶を有する液晶パネル、
b 前記第2状態のカイラルスメクチツク液晶に
その印加電圧の極性に応じて第1の配向状態又
は第2の配向状態を生じさせる電圧信号を前記
一対の電極に印加する第1の手段、並びに
c 前記第1の手段とは別個に設けられ、且つ前
記交流電圧を前記一対の電極に印加する第2の
手段
を有する液晶装置を特徴とする。
以下、本発明を実施例に従つて、説明する。
〔実施例〕
第1図に本発明に用いた液晶セルの平面図aお
よび断面図bを示した。ガラスあるいはプラスチ
ツク基板3aおよび3b上にストライプ状電極群
4aおよび4bをITO(Indium Tin Oxide)に
より1000Åの膜厚で形成し、その上層にポリイミ
ド被膜6aおよび6bを1000Åの膜厚で形成し
た。さらにその上層に液晶層厚を保持するために
1μのドツト状のポリイミドスペーサー群5を設
けた。このスペーサーにより液晶層6が広い範囲
で一定に保たれる。二枚の基板をラビング処理し
た後、セル組し、後述するビフエニルエステル系
液晶を導入した。
本実施例で使用したビフエニルエステル系化合
物は、下記に示す相転移状態を表わしている。
Iso(等方相)90℃
―――→
Ch(コレステリツク相)
76℃
―――→
SmA(スメクチツクA相)
―――→
53℃
SmC*
――――――→
10℃以下Cry(結晶相)
液晶層が充分に厚い場合(〜100μ)、SmC*で
はらせん構造をとり、そのピツチは約4μである。
三角波法による自発分極の状態から自発分極は
約10nc/cm2であつた。まず、前述のビフエニル
エステル系液晶が封入されているセル構造体7
は、セル7全体が均一に加熱される様な加熱ケー
ス(図示せず)にセツトされる。
次に、セル7中の化合物が等方相となる温度
(約75℃)まで加熱する。しかる後に、加熱ケー
スの温度を降温させて、セル7中の等方相となつ
ている化合物を降温過程に移す。この降温過程で
等方相の化合物は、約72℃でグランジユアン組織
のコレステリツク相に相転移し、さらに降温過程
を続けると約60℃でコレステリツク相から一軸異
方相であるSmAに相転移を生じることができる。
この時、SmAの液晶分子軸は、ラビング方向に
揃う。
しかる後に、このSmAより降温過程でSmC*
に相転移することによつて、例えばセル厚を3μm
程度以下とすると非らせん構造をもつモノドメイ
ンのSmC*が得られる。
第2図は、液晶分子の初期配向状態を模式的に
示すもので、基板面25より上方から見た図であ
る。
図中、20は一軸性配向処理の方向、即ち、本
実施例ではラビング方向に相当している。SmA
相では、液晶分子がラビング方向20と一致する
液晶の平均分子軸方向21をもつて配向する。
SmC*相に於ては液晶分子の平均的な分子軸方
向は、22aの方向に傾き、ラビング方向20と
SmC*の平均分子軸方向22aは、角度θをな
して第1の安定配向状態となる。この状態で上限
基板に電圧を印加すると、SmC*の液晶分子の
平均的な分子軸方向は、角度θより大きい角度に
変化し、角度で飽和した第3の安定配向状態を
とる。この時の平均分子軸方向を23aとする。
次に、電圧を零に戻すと、液晶分子は再びもと
の第1の分子軸方向22aの状態に戻る。従つ
て、第1の分子軸方向22aの状態で、液晶分子
はメモリー性を有することになる。又、分子軸方
向22aの状態で、逆方向の電圧を印加すると、
その電圧が充分に高い場合には、液晶分子の平均
分子軸方向は、飽和して角度をなす第4の安定
配向状態の平均分子軸方向晶23bに転移る。
そして、再び電圧を零に戻すと、液晶分子は、
角度θをなす第2の安定配向状態の平均分子軸方
向22bの状態に落つく。角度θは一つの安定状
態の分子軸の平均的な方向を検出している。これ
が角度より小さい理由はSmC*層内で液晶が
完全に平行な配列をとらないためと考えられ、そ
の配向の平均的な分子軸方向がθの方向である。
θの角度は原理的に角度にすることは可能だど
考えられる。角度θ(チルト角)の値を大きくす
ることは、透過率を高める意味で大きな効果を持
つ。入射光Io、透過光Iとすると透過率は以下の
式で表わされる
I/Io=sin24θsin2Δndπ/λ (1)
θ:チルト角、Δn:屈折率異方性、
d:膜厚、λ:波長
上式は直交ニコル下で一方の平均的分子軸方向
と1つの偏光軸を合致させ、もう一方の安定状態
の分子軸方向に転移させた際の透過率である。上
式は基板に対して液晶分子がすべて平行に配列し
た場合に適用されるが角度θを持つような分子軸
方向が基板に対して略平行の場合もほぼ適用でき
ることを確認した。
従つて、チルト角はθ=22.5°で透過率は最大
となる。本発明においてはセル厚dは1.1μmと
1.8μmのセルで実験を行つたが、それぞれθ(d
=1.1)=8.0°,θ(d=1.8)=7.5°であり、最適値
に及ばない。
次に、を観測するために直流電圧50Vを2つ
の極性で印加すると、(d=1.1)=23.1°、
(d=1.8)=24.0°でほぼ最適値に近い値が得られ
た。
本発明者らは、双安定状態のチルトθを最適値
に近づけるためさらに実験を行つた。
双安定状態間の反転は、以下のパルスで行なわ
れた。
[Industrial Application Field] The present invention relates to a liquid crystal device applied to a liquid crystal display device, a liquid crystal-optical shutter array, etc., and more specifically, a liquid crystal device with improved display and driving characteristics by improving the initial alignment state of liquid crystal molecules. Regarding. [Prior Art] Until now, the use of a liquid crystal element having bistable properties has been proposed by Clark and Lagerwall (Japanese Patent Laid-Open No. 1983-1993).
-107216, US Pat. No. 4,367,924, etc.). As this liquid crystal having bistability, a ferroelectric liquid crystal having a chiral smectic C phase (SmC * ) or H phase (SmH * ) is generally used. This liquid crystal has a bistable state consisting of a first optically stable state and a second optically stable state with respect to an electric field, and therefore, unlike the optical modulation element used in the conventional TN type liquid crystal, for example, The liquid crystal is aligned in a first optically stable state with respect to one electric field vector, and the liquid crystal is aligned in a second optically stable state with respect to the other electric field vector. Furthermore, this type of liquid crystal has the property of very quickly taking one of the above two stable states in response to an applied electric field, and maintaining that state when no electric field is applied. By utilizing these properties, many of the problems of the conventional TN type devices mentioned above can be significantly improved. [Problems to be Solved by the Invention] For the above-mentioned ferroelectric liquid crystal, a method is known in which a uniaxial alignment treatment is performed on the substrate surface in order to obtain uniform alignment performance. Examples of the uniaxial alignment treatment include a method of rubbing the substrate surface in one direction with a bead, cloth, or paper, and a method of obliquely depositing SiO or SiO 2 on the substrate surface. By subjecting the substrate surface to a proper uniaxial alignment treatment, a specified bistable state was achieved in the initial alignment. However, in its initial state, as described below, optical modulation experiments under crossed nicol conditions resulted in poor contrast and a small amount of transmitted light, which caused practical problems. [Means for solving the problem] and [effect] According to experiments conducted by the present inventors, the above-mentioned problem can be solved by
It has been found that this phenomenon is caused by the twisting of the smectic phase layer perpendicular to the substrate in the above-mentioned ferroelectric liquid crystal element, especially a ferroelectric liquid crystal element subjected to uniaxial alignment treatment. That is, it has been found that this is because the smectic phase liquid crystal molecules adjacent to the upper and lower substrates intersect at an angle α, and the smectic phase layer is twisted at this angle α. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a ferroelectric liquid crystal device that eliminates the above-mentioned problems. That is, the present invention provides: (a) a pair of substrates arranged at a distance, a pair of electrodes respectively provided inside the pair of substrates, and two different orientation states arranged between the pair of substrates in the absence of an electric field; is expressed, and the angle formed by the average molecular axis of each of the two orientation states is 2θ
By applying an AC voltage higher than the threshold voltage of the liquid crystal to the chiral smectic liquid crystal in the first state, the two different orientation states in the absence of an electric field after the application of the AC voltage is removed are a liquid crystal panel having a chiral smectic liquid crystal in a second state in which the angle formed by each average molecular axis is an angle 2θ′ larger than the above 2θ; b. a first means for applying a voltage signal to the pair of electrodes that causes the liquid crystal to exhibit a first orientation state or a second orientation state depending on the polarity of the applied voltage; and c. What is the first means? The liquid crystal device is characterized by having second means separately provided and applying the alternating current voltage to the pair of electrodes. Hereinafter, the present invention will be explained based on examples. [Example] FIG. 1 shows a plan view a and a cross-sectional view b of a liquid crystal cell used in the present invention. Striped electrode groups 4a and 4b were formed on glass or plastic substrates 3a and 3b with a thickness of 1000 Å using ITO (Indium Tin Oxide), and polyimide coatings 6a and 6b were formed thereon with a thickness of 1000 Å. Furthermore, in order to maintain the thickness of the liquid crystal layer on the upper layer
A 1 μm dot-shaped polyimide spacer group 5 was provided. This spacer keeps the liquid crystal layer 6 constant over a wide range. After rubbing the two substrates, they were assembled into cells, and a biphenyl ester liquid crystal described later was introduced. The biphenyl ester compound used in this example exhibits the phase transition state shown below. Iso (isotropic phase) 90℃ ―――→ Ch (cholesteric phase) 76℃ ―――→ SmA (smectic A phase) ――――→ 53℃ SmC * ――――――→ 10℃ or less Cry (crystal) Phase) When the liquid crystal layer is sufficiently thick (~100μ), SmC * has a helical structure with a pitch of about 4μ. The spontaneous polarization was approximately 10 nc/cm 2 from the state of spontaneous polarization determined by the triangular wave method. First, the cell structure 7 in which the above-mentioned biphenyl ester liquid crystal is sealed
is set in a heating case (not shown) such that the entire cell 7 is heated uniformly. Next, the compound in the cell 7 is heated to a temperature (approximately 75° C.) at which it becomes an isotropic phase. Thereafter, the temperature of the heating case is lowered, and the compound in the isotropic phase in the cell 7 is transferred to the temperature lowering process. During this temperature-lowering process, the isotropic phase of the compound undergoes a phase transition to a cholesteric phase with a Grangean structure at approximately 72°C, and if the temperature-lowering process continues further, it undergoes a phase transition from the cholesteric phase to SmA, a uniaxially anisotropic phase, at approximately 60°C. can occur.
At this time, the liquid crystal molecular axis of SmA is aligned in the rubbing direction. After that, in the process of cooling down from this SmA, SmC *
For example, the cell thickness can be reduced to 3μm by phase transition to
If it is less than a certain degree, a monodomain SmC * with a non-helical structure will be obtained. FIG. 2 schematically shows the initial alignment state of liquid crystal molecules, and is a view seen from above the substrate surface 25. In the figure, 20 corresponds to the direction of uniaxial alignment treatment, that is, the rubbing direction in this example. SmA
In the phase, the liquid crystal molecules are aligned with the average molecular axis direction 21 of the liquid crystal coinciding with the rubbing direction 20.
In the SmC * phase, the average molecular axis direction of liquid crystal molecules is tilted in the direction of 22a, and the rubbing direction is 20.
The average molecular axis direction 22a of SmC * forms an angle θ and is in a first stable orientation state. When a voltage is applied to the upper limit substrate in this state, the average molecular axis direction of the liquid crystal molecules of SmC * changes to an angle larger than the angle θ, and assumes a third stable alignment state saturated at the angle. The average molecular axis direction at this time is defined as 23a. Next, when the voltage is returned to zero, the liquid crystal molecules return to their original state in the first molecular axis direction 22a. Therefore, in the state of the first molecular axis direction 22a, the liquid crystal molecules have memory properties. Also, when applying a voltage in the opposite direction in the state of the molecular axis direction 22a,
If the voltage is sufficiently high, the average molecular axis direction of the liquid crystal molecules is saturated and transitions to a fourth stable orientation crystal 23b that forms an angle. Then, when the voltage is returned to zero again, the liquid crystal molecules become
It settles into a second stable orientation state with an angle θ in the average molecular axis direction 22b. The angle θ detects the average direction of the molecular axis in one stable state. The reason why this is smaller than the angle is thought to be that the liquid crystals within the SmC * layer do not take a completely parallel alignment, and the average molecular axis direction of this alignment is the direction of θ.
It is conceivable that the angle θ could be made into an angle in principle. Increasing the value of the angle θ (tilt angle) has a great effect in increasing the transmittance. Assuming incident light Io and transmitted light I, the transmittance is expressed by the following formula: I/Io=sin 2 4θsin 2 Δndπ/λ (1) θ: tilt angle, Δn: refractive index anisotropy, d: film thickness, λ: Wavelength The above equation is the transmittance when one average molecular axis direction and one polarization axis are made to match under crossed Nicol conditions and transferred to the other stable state molecular axis direction. Although the above formula is applied when all the liquid crystal molecules are arranged parallel to the substrate, it was confirmed that it is also almost applicable when the molecular axis direction having an angle θ is approximately parallel to the substrate. Therefore, the transmittance is maximum when the tilt angle is θ=22.5°. In the present invention, the cell thickness d is 1.1 μm.
The experiment was conducted using a 1.8 μm cell, and each θ(d
= 1.1) = 8.0°, θ (d = 1.8) = 7.5°, which is less than the optimal value. Next, when we apply a DC voltage of 50V with two polarities to observe, (d=1.1)=23.1°,
A value close to the optimum value was obtained at (d=1.8)=24.0°. The present inventors conducted further experiments in order to bring the tilt θ in the bistable state closer to the optimum value. Inversion between bistable states was performed with the following pulses.
【表】
これらのセルに電圧±10V〜150V、周波数20
〜100Hzの交流電界を印加した。印加中、30〜40
Hzでは反転状態が視認できたが、40Hz以上では確
認できなかつた。この交流電圧を印加した後、電
界を切り、再び双安定状態のチルト角θ(交流印
加処理後の無電界時におけるチルト角)および双
安定状態反転パルスのパルス幅−電圧値特性を調
べた。
交流電圧を15分間印加した後のセル状態を以下
に説明する。チルト角θを広げるために効果的な
周波数は30Hz〜70Hzでありこの範囲では優劣の差
はない。周波数を40Hzとした場合の電圧の変化に
よるセル状態は10V〜50Vでは、チルト角の差は
ない。しかし50V〜60Vでθ′(d=1.1)=21.0°,
θ′(d=1.8)=18.8°のドメインが出現し始める。
60〜80Vの電圧では、このドメインが全体に広が
り非常によいコントラストが得られた。80V以上
では多くの欠陥が多く発生し、モノドメインがく
ずれた。
60〜80V印加した後のθ′状態の双安定状態間の
反転は以下のパルスで行なわれた。[Table] Voltage ±10V to 150V, frequency 20 for these cells
An alternating electric field of ~100 Hz was applied. Applying, 30-40
The inverted state was visible at Hz, but not at 40Hz or higher. After applying this AC voltage, the electric field was turned off, and the tilt angle θ of the bistable state (the tilt angle in the absence of an electric field after the AC application process) and the pulse width-voltage value characteristics of the bistable state inversion pulse were examined again. The cell state after applying AC voltage for 15 minutes will be described below. The effective frequency for widening the tilt angle θ is 30Hz to 70Hz, and there is no difference in superiority or inferiority within this range. When the frequency is set to 40 Hz, there is no difference in the tilt angle between cell states due to voltage changes of 10 V to 50 V. However, at 50V to 60V, θ′ (d=1.1) = 21.0°,
A domain of θ′ (d=1.8)=18.8° begins to appear.
At voltages of 60 to 80 V, this domain spread throughout and very good contrast was obtained. Above 80V, many defects occurred and the monodomain collapsed. The reversal between bistable states of the θ' state after applying 60 to 80 V was performed with the following pulses.
【表】
θ′状態では電圧印加前の双安定状態より反転電
圧が高くなつている。この原因は明らかではない
が、チルト角θ′がに近づくためには、配向膜の
界面付近の液晶分子をも反転させるエネルギーを
与えなければならないために、反転に必要な駆動
電圧が高いことが必要であると考えられる。交流
電圧、印加後のチルト角θ′により透過光量が印加
前に比較して3倍近くになり透過光量がd=
1.1μmで14%、d=1.8で19%になつた。
また他の実験例として、ガラス基板上のポリイ
ミド被膜をポリビニルアルコール被膜にしたのみ
で他は全く同様な実験を行つた。液晶層厚dはd
=1.5μmで行つた。ほぼ同様の結果が得られた。
実験結果:
有効な交流電圧:30〜70Hz,45〜70V
チルト角 :交流電圧印加前θ=7.8°
直流電圧印加時=22.8°
交流電圧印加後θ′=21.6°
反転駆動電圧[Table] In the θ' state, the reversal voltage is higher than in the bistable state before voltage application. The reason for this is not clear, but in order for the tilt angle θ' to approach , it is necessary to provide energy that also inverts the liquid crystal molecules near the interface of the alignment film, so the driving voltage required for inversion is high. considered necessary. The amount of transmitted light becomes nearly three times that of before application due to the AC voltage and the tilt angle θ' after application, and the amount of transmitted light becomes d=
It was 14% at 1.1 μm and 19% at d=1.8. As another experimental example, a completely similar experiment was conducted except that the polyimide coating on the glass substrate was replaced with a polyvinyl alcohol coating. The liquid crystal layer thickness d is d
= 1.5 μm. Almost similar results were obtained. Experimental results: Effective AC voltage: 30 to 70Hz, 45 to 70V Tilt angle: θ = 7.8° before AC voltage application, 22.8° when DC voltage is applied, θ′ = 21.6° after AC voltage application, Reverse drive voltage
以上のようにコントラスト及び透過光量を実用
的な値に保つために適宜交流電界を印加する必要
があるが、本発明の液晶素子の駆動回路構成にす
ることにより、有効にかる駆動回路を保護し、駆
動回路系を破壊することがなく交流を印加するこ
とが可能となり、従つて、安定した高画質のデイ
スプレイあるいはコントラストの高い光シヤツタ
ーなどが提供できる。
As described above, it is necessary to appropriately apply an alternating current electric field in order to maintain the contrast and amount of transmitted light at practical values, but by adopting the drive circuit configuration of the liquid crystal element of the present invention, the drive circuit can be effectively protected. , it becomes possible to apply alternating current without destroying the drive circuit system, and therefore it is possible to provide displays with stable high image quality or optical shutters with high contrast.
第1図aは、本発明で用いる液晶素子の平面図
で、第1図bはそのX−X′断面図である。第2
図は本発明に用いた液晶素子における液晶素子配
列を模式的に表わした平面図である。第3図は本
発明の液晶装置を表わす回路図である。第4図は
本発明に用いたスイツチ群を表わす回路図であ
る。第5図は本発明で用いた別の液晶素子を表わ
す断面図である。第6図は本発明の別の液晶装置
を表わす回路図である。第7図は本発明を用いた
別のスイツチ群を表わす回路図である。第8図は
本発明の別の液晶装置を表わす回路図である。第
9図及び第10図は本発明で用いた強誘電性液晶
素子を模式的に表わす斜視図である。
FIG. 1a is a plan view of a liquid crystal element used in the present invention, and FIG. 1b is a sectional view taken along line X-X'. Second
The figure is a plan view schematically showing the arrangement of liquid crystal elements in the liquid crystal element used in the present invention. FIG. 3 is a circuit diagram showing the liquid crystal device of the present invention. FIG. 4 is a circuit diagram showing a group of switches used in the present invention. FIG. 5 is a sectional view showing another liquid crystal element used in the present invention. FIG. 6 is a circuit diagram showing another liquid crystal device of the present invention. FIG. 7 is a circuit diagram representing another group of switches using the present invention. FIG. 8 is a circuit diagram showing another liquid crystal device of the present invention. 9 and 10 are perspective views schematically showing the ferroelectric liquid crystal element used in the present invention.
Claims (1)
対の基板の内側にそれぞれ設けた一対の電極及
び該一対の基板間に配置され、且つ無電界時に
互いに異なる2つの配向状態を発現し、該2つ
の配向状態のそれぞれの平均分子軸のなす角度
が2θである第1状態のカイラルスメクチツク液
晶に、該液晶の閾値電圧より大きい交流電圧を
印加することにより、該交流電圧の印加を解除
した後の無電界時における前記互いに異なる2
つの配向状態のそれぞれの平均分子軸のなす角
度が前記2θより大きい角度2θ′である第2状態
のカイラルスメクチツク液晶を生成してなるカ
イラルスメクチツク液晶を有する液晶パネル、 b 前記第2状態のカイラルスメクチツク液晶に
その印加電圧の極性に応じて第1の配向状態又
は第2の配向状態を生じさせる電圧信号を前記
一対の電極に印加する第1の手段、並びに c 前記第1の手段とは別個に設けられ、且つ前
記交流電圧を前記一対の電極に印加する第2の
手段を有する液晶装置。[Claims] 1 a A pair of substrates arranged at a distance, a pair of electrodes respectively provided inside the pair of substrates, and two orientations arranged between the pair of substrates and different from each other when no electric field is applied. By applying an alternating current voltage larger than the threshold voltage of the liquid crystal to the chiral smectic liquid crystal in the first state in which the average molecular axis of each of the two orientation states forms an angle of 2θ, 2 different from each other in the absence of an electric field after the application of the alternating current voltage is cancelled.
a liquid crystal panel having a chiral smectic liquid crystal formed by producing a chiral smectic liquid crystal in a second state in which the angle between the average molecular axes of each of the two orientation states is an angle 2θ′ larger than the above 2θ; b. a first means for applying a voltage signal to the pair of electrodes that causes the chiral smectic liquid crystal in the state to be in a first orientation state or a second orientation state depending on the polarity of the applied voltage; and c. A liquid crystal device comprising a second means provided separately from the means for applying the AC voltage to the pair of electrodes.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22075585A JPS6279427A (en) | 1985-10-03 | 1985-10-03 | liquid crystal device |
| FR868612388A FR2590392B1 (en) | 1985-09-04 | 1986-09-03 | FERROELECTRIC LIQUID CRYSTAL DEVICE |
| DE19863630012 DE3630012A1 (en) | 1985-09-04 | 1986-09-03 | FERROELECTRIC LIQUID CRYSTAL DEVICE |
| GB8621326A GB2183054B (en) | 1985-09-04 | 1986-09-04 | Ferroelectric liquid crystal device and method of conditioning such a device |
| US07/309,034 US5013137A (en) | 1985-09-04 | 1989-02-02 | Ferroelectric liquid crystal device having increased tilt angle |
| CA000615536A CA1331409C (en) | 1985-10-03 | 1989-10-23 | Ferroelectric liquid crystal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22075585A JPS6279427A (en) | 1985-10-03 | 1985-10-03 | liquid crystal device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6279427A JPS6279427A (en) | 1987-04-11 |
| JPH0446410B2 true JPH0446410B2 (en) | 1992-07-29 |
Family
ID=16756031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22075585A Granted JPS6279427A (en) | 1985-09-04 | 1985-10-03 | liquid crystal device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6279427A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0284619A (en) * | 1987-10-16 | 1990-03-26 | Seiko Epson Corp | liquid crystal electro-optical element |
| JP4722562B2 (en) * | 2005-05-27 | 2011-07-13 | シャープ株式会社 | LCD panel |
-
1985
- 1985-10-03 JP JP22075585A patent/JPS6279427A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6279427A (en) | 1987-04-11 |
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