JPH044772U - - Google Patents

Info

Publication number
JPH044772U
JPH044772U JP4421490U JP4421490U JPH044772U JP H044772 U JPH044772 U JP H044772U JP 4421490 U JP4421490 U JP 4421490U JP 4421490 U JP4421490 U JP 4421490U JP H044772 U JPH044772 U JP H044772U
Authority
JP
Japan
Prior art keywords
lead
semiconductor laser
earth
earth lead
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4421490U
Other languages
Japanese (ja)
Other versions
JP2510162Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4421490U priority Critical patent/JP2510162Y2/en
Publication of JPH044772U publication Critical patent/JPH044772U/ja
Application granted granted Critical
Publication of JP2510162Y2 publication Critical patent/JP2510162Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案半導体レーザ装置の第1の実施
例を示す斜視図、第2図A乃至Cは第1図に示し
た半導体レーザ装置の製造方法を工程順に示す斜
視図、第3図A,Bは本考案半導体レーザ装置の
第2の実施例を互いに異なる角度から視た斜視図
、第4図A,Bは第3図に示した半導体レーザ装
置の製造方法を工程順に示す斜視図、第5図及び
第6図A,Bは本考案半導体レーザ装置の第3の
実施例を説明するためのもので、第5図はアース
リードの斜視図、第6図Aはリード保持体の斜視
図、同図Bはリード保持体の正面図、第7図はア
ースリードの変形例の斜視図、第8図乃至第10
図は各別の従来例を示す斜視図である。 符号の説明、1……アースリード、2a……折
り曲げ部、3……アースリードの一部、4……リ
ード保持体、5……リード、6……係合部、7…
…素子位置決め部、9……半導体レーザ素子、1
1……アースリードの一部、12……係合部、1
3……折り曲げ部、18……アースリードの一部
、19……係合部。
FIG. 1 is a perspective view showing a first embodiment of the semiconductor laser device of the present invention, FIGS. 2A to C are perspective views showing the manufacturing method of the semiconductor laser device shown in FIG. 1 in order of steps, and FIG. 3A , B are perspective views of a second embodiment of the semiconductor laser device of the present invention viewed from different angles; FIGS. 4A and 4B are perspective views showing the manufacturing method of the semiconductor laser device shown in FIG. 3 in order of steps; 5 and 6A and 6B are for explaining the third embodiment of the semiconductor laser device of the present invention, FIG. 5 is a perspective view of the ground lead, and FIG. 6A is a perspective view of the lead holder. Figure B is a front view of the lead holder, Figure 7 is a perspective view of a modified example of the earth lead, and Figures 8 to 10.
The figures are perspective views showing different conventional examples. Explanation of symbols: 1...Earth lead, 2a...Bending portion, 3...Part of earth lead, 4...Lead holder, 5...Lead, 6...Engaging portion, 7...
...Element positioning section, 9...Semiconductor laser element, 1
1...Part of earth lead, 12...Engagement part, 1
3...Bending portion, 18...Part of the earth lead, 19...Engaging portion.

Claims (1)

【実用新案登録請求の範囲】 アースリードと、 上記アースリードの一部と係合する係合部及び
半導体レーザ素子を位置決めする素子位置決め部
を有し、リードが貫設された絶縁体からなり、上
記アースリードの上記一部との係合部にての係合
により位置決めされて上記アースリードに固定さ
れたリード保持体と、 上記素子位置決め部により位置決めされてアー
スリードにボンデイングされ、電極が上記リード
と接続された半導体レーザ素子と、 からなり、 上記半導体レーザ素子がアースリード又はリー
ド保持体の折曲げ部によつてガードされた ことを特徴とする半導体レーザ装置。
[Scope of Claim for Utility Model Registration] An insulator comprising an earth lead, an engaging part that engages with a part of the earth lead, and an element positioning part that positions a semiconductor laser element, and through which the lead is inserted; A lead holder is positioned by engagement with the part of the earth lead and fixed to the earth lead, and a lead holder is positioned by the element positioning part and bonded to the earth lead, and the electrode is positioned by the element positioning part and bonded to the earth lead. 1. A semiconductor laser device comprising: a semiconductor laser element connected to a lead, wherein the semiconductor laser element is guarded by a ground lead or a bent portion of a lead holder.
JP4421490U 1990-04-25 1990-04-25 Semiconductor laser equipment Expired - Fee Related JP2510162Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4421490U JP2510162Y2 (en) 1990-04-25 1990-04-25 Semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4421490U JP2510162Y2 (en) 1990-04-25 1990-04-25 Semiconductor laser equipment

Publications (2)

Publication Number Publication Date
JPH044772U true JPH044772U (en) 1992-01-16
JP2510162Y2 JP2510162Y2 (en) 1996-09-11

Family

ID=31557313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4421490U Expired - Fee Related JP2510162Y2 (en) 1990-04-25 1990-04-25 Semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JP2510162Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170741A (en) * 2008-01-18 2009-07-30 Rohm Co Ltd Semiconductor laser device and its production process
JP2011091105A (en) * 2009-10-20 2011-05-06 Shinko Electric Ind Co Ltd Package for semiconductor laser, semiconductor laser device, and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170741A (en) * 2008-01-18 2009-07-30 Rohm Co Ltd Semiconductor laser device and its production process
JP2011091105A (en) * 2009-10-20 2011-05-06 Shinko Electric Ind Co Ltd Package for semiconductor laser, semiconductor laser device, and method of manufacturing the same

Also Published As

Publication number Publication date
JP2510162Y2 (en) 1996-09-11

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