JPH0447761B2 - - Google Patents

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Publication number
JPH0447761B2
JPH0447761B2 JP58119342A JP11934283A JPH0447761B2 JP H0447761 B2 JPH0447761 B2 JP H0447761B2 JP 58119342 A JP58119342 A JP 58119342A JP 11934283 A JP11934283 A JP 11934283A JP H0447761 B2 JPH0447761 B2 JP H0447761B2
Authority
JP
Japan
Prior art keywords
circuit
voltage
reference voltage
bridge circuit
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58119342A
Other languages
Japanese (ja)
Other versions
JPS6011101A (en
Inventor
Hisayoshi Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11934283A priority Critical patent/JPS6011101A/en
Publication of JPS6011101A publication Critical patent/JPS6011101A/en
Publication of JPH0447761B2 publication Critical patent/JPH0447761B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体歪ゲージを用いた歪測定回路
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a strain measurement circuit using a semiconductor strain gauge.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

半導体歪ゲージを用いた歪測定回路の従来例を
第1図に示す。図において、1は半導体歪ゲージ
1Aで構成したブリツジ回路、2は温度補償電圧
発生回路であり、トランジスタ2Aと抵抗器2
B,2Cにより構成し前記ブリツジ回路1と定電
圧源との間に接続している。3は前記ブリツジ回
路1の電源電圧としての定電圧を得る定電圧ダイ
オード(ツエナダイオード)、4は演算増幅器4
Aを用いた差動増幅回路であり、その入力端を前
記ブリツジ回路1の出力端に接続している。
A conventional example of a strain measurement circuit using a semiconductor strain gauge is shown in FIG. In the figure, 1 is a bridge circuit made up of a semiconductor strain gauge 1A, 2 is a temperature compensation voltage generation circuit, and has a transistor 2A and a resistor 2.
B and 2C, and is connected between the bridge circuit 1 and a constant voltage source. 3 is a constant voltage diode (Zena diode) that obtains a constant voltage as the power supply voltage of the bridge circuit 1; 4 is an operational amplifier 4;
This is a differential amplifier circuit using A, and its input terminal is connected to the output terminal of the bridge circuit 1.

この歪測定回路においては、ブリツジ回路1に
温度補償電圧発生回路2を介して電源電圧が印加
されており、ブリツジ駆動電圧は、温度補償電圧
発生回路2の働き、つまり温度が上昇(あるいは
低下)すると降下電圧が減少(あるいは増加)す
るに電圧調整作用により、温度の変化に応じて増
減する。これにより、半導体歪ゲージ1Aのゲー
ジフアクタが温度の上昇に伴つて低下することを
補償し、歪ゲージの温度による感度変化をなくし
ている。ブリツジ回路1の出力は差動増幅回路4
により増幅され、出力電圧e0となる。
In this strain measurement circuit, a power supply voltage is applied to a bridge circuit 1 via a temperature compensation voltage generation circuit 2, and the bridge drive voltage is determined by the function of the temperature compensation voltage generation circuit 2, that is, when the temperature rises (or decreases). Then, the voltage drop decreases (or increases) and increases or decreases depending on the temperature change due to the voltage adjustment effect. This compensates for the decrease in the gauge factor of the semiconductor strain gauge 1A as the temperature rises, and eliminates sensitivity changes due to temperature of the strain gauge. The output of the bridge circuit 1 is sent to the differential amplifier circuit 4.
It is amplified by , and becomes the output voltage e 0 .

このように温度補償が行われて歪ゲージ1Aの
温度による感度変化が防止されるが、半導体歪ゲ
ージ1Aの抵抗温度特性にバラツキがあると、歪
が零であつてもブリツジ回路1の出力は第2図の
実線あるいは点線のように温度の変化に伴つて変
化する。即ち、零点温度誤差を生じることにな
る。
Temperature compensation is performed in this way to prevent sensitivity changes due to temperature of the strain gauge 1A, but if there are variations in the resistance temperature characteristics of the semiconductor strain gauge 1A, the output of the bridge circuit 1 will change even if the strain is zero. As shown by the solid line or dotted line in FIG. 2, it changes as the temperature changes. That is, a zero point temperature error will occur.

これを補償するために、第3図に示すようにブ
リツジの一辺に抵抗器1Bを直列に、また他の辺
に抵抗器1Cを並列にそれぞれ接続したものがあ
る。
In order to compensate for this, as shown in FIG. 3, a resistor 1B is connected in series on one side of the bridge, and a resistor 1C is connected in parallel on the other side.

このように抵抗器1B,1Cを付設すれば、零
点温度誤差を零とすることができるが、調整時に
は両抵抗器1B,1Cを関連して変える必要があ
り、種々の抵抗値の抵抗器を各製品毎に用意して
おかなければならないため、工程管理などが煩雑
になる。
By attaching resistors 1B and 1C in this way, the zero point temperature error can be made zero, but when making adjustments, it is necessary to change both resistors 1B and 1C in conjunction with each other, and resistors with various resistance values can be used. Since it must be prepared for each product, process management becomes complicated.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、零点温度特性を簡単な構成で
容易に調整できる歪測定回路を提供することにあ
る。
An object of the present invention is to provide a strain measurement circuit that can easily adjust zero point temperature characteristics with a simple configuration.

〔発明の概要〕[Summary of the invention]

本発明は、少なくとも2辺に半導体歪ゲージを
有するブリツジ回路に温度補償電圧発生回路を介
して電源電圧を印加し、ブリツジ回路の出力を演
算増幅器を用いた差動増幅回路で増幅する歪測定
回路において、前記演算増幅器の二つの入力端子
間に可変抵抗器を接続する一方、基準電圧回路を
設け、この基準電圧回路に前記可変抵抗器の摺動
子を抵抗器を介して接続し、常温におけるブリツ
ジ回路の駆動電圧と基準電圧の比を一定の値と
し、かつ可変抵抗器によりブリツジ回路の出力端
電位が基準電圧と等しくなるように調整して所要
の零点温度特性を実現可能としたものである。
The present invention provides a strain measurement circuit in which a power supply voltage is applied to a bridge circuit having semiconductor strain gauges on at least two sides via a temperature compensation voltage generation circuit, and the output of the bridge circuit is amplified by a differential amplifier circuit using an operational amplifier. A variable resistor is connected between the two input terminals of the operational amplifier, and a reference voltage circuit is provided, and the slider of the variable resistor is connected to this reference voltage circuit via a resistor. The ratio of the drive voltage of the bridge circuit to the reference voltage is set to a constant value, and the output terminal potential of the bridge circuit is adjusted to be equal to the reference voltage using a variable resistor to achieve the required zero point temperature characteristics. be.

〔発明の実施例〕[Embodiments of the invention]

第4図は本発明の一実施例を示すもので、1は
半導体歪ゲージ1Aで構成したブリツジ回路、2
は温度補償電圧発生回路、3及び3′はツエナダ
イオード、4は演算増幅器4Aを用いた差動増幅
回路であり、演算増幅器4Aの入力端子に前記ブ
リツジ回路1の出力端をそれぞれ接続するととも
に、両入力端子間に可変抵抗器5を接続してい
る。
FIG. 4 shows an embodiment of the present invention, in which 1 is a bridge circuit composed of 1A of semiconductor strain gauges, 2
is a temperature compensation voltage generation circuit, 3 and 3' are Zener diodes, and 4 is a differential amplifier circuit using an operational amplifier 4A, and the output terminal of the bridge circuit 1 is connected to the input terminal of the operational amplifier 4A, respectively. A variable resistor 5 is connected between both input terminals.

前記ツエナダイオード3′はツエナダイオード
3と直列に接続することにより測定回路の電源と
しての定電圧源の一部を構成するとともに、基準
電圧回路を構成している。この基準電圧回路には
演算増幅器4Aの基準側の入力端子(非反転入力
端子)を抵抗器を介して接続するとともに、前記
可変抵抗器5の摺動子を抵抗器6を介して接続し
ている。
By connecting the Zener diode 3' in series with the Zener diode 3, the Zener diode 3' constitutes a part of a constant voltage source as a power source for the measuring circuit, and also constitutes a reference voltage circuit. The reference side input terminal (non-inverting input terminal) of the operational amplifier 4A is connected to this reference voltage circuit via a resistor, and the slider of the variable resistor 5 is connected via a resistor 6. There is.

なお、基準電圧回路は、常温におけるブリツジ
回路1の駆動電圧と基準電圧erの比が2:1とな
るように基準電圧erを設定する。
Note that the reference voltage circuit sets the reference voltage e r so that the ratio of the driving voltage of the bridge circuit 1 to the reference voltage e r at room temperature is 2:1.

次に、作用について述べる。ただし、歪に対す
る出力電圧の発生に関しては、従来例では出力電
圧e0が零電位に対して出力され、本実施例では基
準電圧erに対して出力される点を除けば、従来例
と略同様であり、ここでは零点温度補償作用につ
いて説明する。
Next, we will discuss the effect. However, regarding the generation of output voltage with respect to distortion, it is similar to the conventional example except that in the conventional example, the output voltage e 0 is output with respect to zero potential, and in this example, it is output with respect to the reference voltage e r . The same is true, and the zero point temperature compensation effect will be explained here.

零点温度補償についてみれば、第4図の差動増
幅回路4の部分は第6図に示す回路として取扱え
る。歪が零の場合を考えるので、ea=eb=e2、e1
=er、e3−e1=e0の対応が成立つ。また、R/α、
R/βは可変抵抗器5と抵抗器6の作用を示すも
のであり、α=0のときが摺動子を演算増幅器4
Aの反転入力端子側に、β=0のときが非反転入
力端子側に回したときに対応し、α=βが摺動子
が中央のときに対応する。
Regarding zero point temperature compensation, the differential amplifier circuit 4 in FIG. 4 can be treated as the circuit shown in FIG. 6. Since we consider the case where the strain is zero, ea=e b =e 2 , e 1
= e r , the correspondence of e 3 −e 1 = e 0 is established. Also, R/α,
R/β indicates the action of the variable resistor 5 and the resistor 6, and when α=0, the slider is connected to the operational amplifier 4.
On the inverting input terminal side of A, β=0 corresponds to when the slider is turned to the non-inverting input terminal side, and α=β corresponds to when the slider is at the center.

第6図における各電圧は次の式で表わされる。 Each voltage in FIG. 6 is expressed by the following formula.

e0=e3−e1=k(β−α)/1+k−α・(e2−e1
…(1) 一方、ブリツジ回路1の駆動電圧は、常温で基
準電圧erの2倍としており、また、温度により変
化するから 2er+γ・T=2e1+γ・T として表わされる。ただし、γは比例定数、Tは
常温との温度差である。
e 0 = e 3 − e 1 = k (β − α) / 1 + k − α・(e 2 − e 1 )
...(1) On the other hand, the driving voltage of the bridge circuit 1 is twice the reference voltage e r at room temperature, and since it changes depending on the temperature, it is expressed as 2e r +γ·T=2e 1 +γ·T. However, γ is a proportionality constant, and T is a temperature difference from room temperature.

e2はブリツジ駆動電圧の1/2であるから、e2
e1+γ・T/2である。したがつて、(1)式に代入
すると、 e0=e3−e1=k(β−α)/1+k+α・γ/2・T
…(2) となる。この(2)式から、歪が零である場合に周囲
温度が変化したとき、出力e0はα,βの値に対応
して第5図に示すように変化することになる。
Since e 2 is 1/2 of the bridge drive voltage, e 2 =
e 1 +γ·T/2. Therefore, by substituting into equation (1), e 0 = e 3 − e 1 = k(β−α)/1+k+α・γ/2・T
…(2) becomes. From this equation (2), when the strain is zero and the ambient temperature changes, the output e 0 changes as shown in FIG. 5 in response to the values of α and β.

これは、ブリツジ回路1の零点温度誤差に対し
てα,βの値を適当に選定する。つまり可変抵抗
器5の摺動子の位置を変えることにより零点温度
誤差を除去できることを意味する。しかも、常温
においては、出力e0は、T=0であるから、α,
βの値に拘らず零となり、したがつて調整も高温
または低温となつたときに可変抵抗器5を調節し
て出力電圧e0を零に合わせるだけでよいため、調
整は簡単である。
This appropriately selects the values of α and β for the zero point temperature error of the bridge circuit 1. This means that the zero point temperature error can be eliminated by changing the position of the slider of the variable resistor 5. Moreover, at room temperature, the output e 0 is T=0, so α,
It is zero regardless of the value of β, and therefore adjustment is easy because it is only necessary to adjust the variable resistor 5 to make the output voltage e 0 zero when the temperature becomes high or low.

第7図は本発明の他の実施例を示すもので、基
準電圧回路を抵抗器7A,7Bによる分圧器によ
り構成し、定電圧回路はツエナダイオード3によ
り構成している。
FIG. 7 shows another embodiment of the present invention, in which the reference voltage circuit is constituted by a voltage divider formed by resistors 7A and 7B, and the constant voltage circuit is constituted by a Zener diode 3.

このような構成としても、可変抵抗器5の摺動
子を接続する点、つまり抵抗器6の接続点の電位
eeが演算増幅器4Aの二つの入力端子の電位ec
edと同電位になることは前記実施例と同様であ
り、零点温度補償も同様に行われる。ただし、第
7図の場合には、ブリツジ回路の出力端子から電
流iが流出するため、ブリツジ回路に負荷がかか
ることになる。
Even with this configuration, the potential at the point where the slider of the variable resistor 5 is connected, that is, the connection point of the resistor 6
e e is the potential e c of the two input terminals of the operational amplifier 4A,
The same potential as e and d is the same as in the previous embodiment, and zero point temperature compensation is performed in the same way. However, in the case of FIG. 7, since the current i flows out from the output terminal of the bridge circuit, a load is applied to the bridge circuit.

〔発明の効果〕〔Effect of the invention〕

差動増幅回路4における演算増幅器4Aの二つ
の入力端子間に可変抵抗器5を接続する一方、常
温におけるブリツジ回路の駆動電圧との比が一定
の値となる基準電圧を発生する基準電圧回路を設
け、この基準電圧回路に前記可変抵抗器の摺動子
を抵抗器を介して接続しただけで、つまり第4図
の各部の電位ea〜edが常温で歪が零のとき全て基
準電圧erと等しくなる構成としただけであるか
ら、回路構成は非常に簡単である。しかも、歪が
零の状態で可変抵抗器の摺動子の位置を出力電圧
が零となるように調整すればよいので、零点温度
誤差をなくすための調整は容易である。また、可
変抵抗器により零点温度誤差の補償量を連続的に
変化させることができるので、製品に対して多く
の抵抗値の抵抗器を用意しておく必要がなくな
り、工程管理の簡易化に寄与できる。
A variable resistor 5 is connected between the two input terminals of the operational amplifier 4A in the differential amplifier circuit 4, and a reference voltage circuit is provided that generates a reference voltage that has a constant ratio with the driving voltage of the bridge circuit at room temperature. By simply connecting the slider of the variable resistor to this reference voltage circuit via a resistor, in other words, when the potentials e a to e d of each part in Fig. 4 are at room temperature and the distortion is zero, they all become the reference voltage. The circuit configuration is very simple because it is simply configured to be equal to e r . Moreover, since it is only necessary to adjust the position of the slider of the variable resistor so that the output voltage becomes zero when the strain is zero, the adjustment to eliminate the zero point temperature error is easy. In addition, since the amount of compensation for zero point temperature error can be continuously changed using a variable resistor, there is no need to prepare resistors with many resistance values for each product, contributing to simplified process control. can.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は歪測定回路の従来例を示す回路図、第
2図は同歪測定回路の零点温度特性図、第3図は
零点温度誤差の補償手段の一例を示す回路図、第
4図は本発明に係る歪測定回路の一実施例を示す
回路図、第5図及び第6図は同実施例の零点温度
補償作用を説明するための特性図及び回路図、第
7図は本発明の他の実施例を示す回路図である。 1…ブリツジ回路、1A…半導体歪ゲージ、2
…温度補償電圧発生回路、3及び5…ツエナダイ
オード、14…差動増幅回路、4A…演算増幅
器、5…可変抵抗器、6,7A及び7B…抵抗
器。
Fig. 1 is a circuit diagram showing a conventional example of a strain measurement circuit, Fig. 2 is a zero point temperature characteristic diagram of the same strain measurement circuit, Fig. 3 is a circuit diagram showing an example of compensation means for zero point temperature error, and Fig. 4 is a circuit diagram showing an example of compensation means for zero point temperature error. A circuit diagram showing an embodiment of the strain measurement circuit according to the present invention, FIGS. 5 and 6 are characteristic diagrams and a circuit diagram for explaining the zero point temperature compensation effect of the embodiment, and FIG. FIG. 7 is a circuit diagram showing another embodiment. 1...Bridge circuit, 1A...Semiconductor strain gauge, 2
...Temperature compensation voltage generation circuit, 3 and 5...Zena diode, 14...Differential amplifier circuit, 4A...Operation amplifier, 5...Variable resistor, 6, 7A and 7B...Resistor.

Claims (1)

【特許請求の範囲】[Claims] 1 少なくとも2辺に半導体歪ゲージを有するブ
リツジ回路と、このブリツジ回路と電源との間に
接続された温度補償電圧発生回路と、前記ブリツ
ジ回路の出力を増幅する、演算増幅器を用いた差
動増幅回路とを備えた歪測定回路において、前記
演算増幅器の二つの入力端子間に可変抵抗器を接
続するとともに、常温におけるブリツジ回路の駆
動電圧と所定の比を有する基準電圧を生じる基準
電圧回路を設け、この基準電圧回路に前記可変抵
抗器の摺動子を抵抗器を介して接続したことを特
徴とする歪測定回路。
1. A bridge circuit having semiconductor strain gauges on at least two sides, a temperature-compensated voltage generation circuit connected between the bridge circuit and a power supply, and a differential amplifier using an operational amplifier to amplify the output of the bridge circuit. In the distortion measurement circuit, a variable resistor is connected between the two input terminals of the operational amplifier, and a reference voltage circuit is provided that generates a reference voltage having a predetermined ratio to the driving voltage of the bridge circuit at room temperature. , A strain measuring circuit characterized in that a slider of the variable resistor is connected to the reference voltage circuit via a resistor.
JP11934283A 1983-06-30 1983-06-30 Distortion measuring circuit Granted JPS6011101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11934283A JPS6011101A (en) 1983-06-30 1983-06-30 Distortion measuring circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11934283A JPS6011101A (en) 1983-06-30 1983-06-30 Distortion measuring circuit

Publications (2)

Publication Number Publication Date
JPS6011101A JPS6011101A (en) 1985-01-21
JPH0447761B2 true JPH0447761B2 (en) 1992-08-04

Family

ID=14759107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11934283A Granted JPS6011101A (en) 1983-06-30 1983-06-30 Distortion measuring circuit

Country Status (1)

Country Link
JP (1) JPS6011101A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748607A (en) * 1980-09-09 1982-03-20 Fuji Electric Co Ltd Pressure transducer

Also Published As

Publication number Publication date
JPS6011101A (en) 1985-01-21

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