JPH0448071A - Sputtering device and sputtering type ion source - Google Patents

Abstract

PURPOSE:To execute sputtering with high-density plasma and to continuously form good-quality thin films at a high speed by combining a cylindrical target and a planar target and efficiently reflecting fast secondary electrons and further, superposing magnetron discharge to expand an erosion region. CONSTITUTION:The planar target 12 is installed in the upper part of a plasma forming chamber 7A of a vacuum chamber 7 and the cylindrical target 13 is installed on the side near a sample chamber 7B. Negative voltages are respectively impressed to these targets by power sources 14, 15. An electromagnet 16A is disposed around this planar target 12 and the cylindrical target 13 is disposed in the direction where generated magnetic fluxes 17 divert. On the other hand, an annular permanent magnet 19A is disposed on the rear surface of the cylindrical target 13 in such a manner that the magnetic fluxes 20A leak to the front surface of the cylindrical target 13. The sputtering is executed by forming the high-density plasma in this way. The fast secondary electrons (gamma electrons) are released from the target surface and move at a high speed to the other target in this way. The discharge is stably sustained even by the low gaseous pressure and the high-density plasma is stabilized.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention utilizes sputtering using high-density plasma to form a thin film or to create and extract metal ions stably with high efficiency. The present invention relates to an apparatus and a sputter type ion source.

[Conventional technology]

2. Description of the Related Art Conventionally, as a thin film forming apparatus using plasma, a sputtering apparatus has been widely used for forming thin films. Among them,
Two-pole sputtering equipment, magnetron sputtering equipment capable of high-speed film formation, and the like are well known.

FIG. 7 shows an outline of the magnetron sputtering apparatus. A substrate holder l^ supporting the substrate l, a target 2 facing the substrate l. A magnetic circuit 2^ installed on the back side is installed in a vacuum chamber 3 having a gas inlet 3A and an exhaust port 3B,
Plasma P is generated by generating a discharge between the target and the vacuum chamber.
to occur. The plasma is confined near the surface of the target 2 by the magnetic field of the magnetic circuit 2A, and
Sputter.

On the other hand, plasma is also widely used as an ion source, and among them, ion sources using hot filaments, such as Kauffman type ion sources, are well known as ion sources for various processing and sputtering devices.

Figure 8 shows an overview of the Kaufmann type ion source.

A filament 4A for generating thermionic electrons in the plasma generation chamber 4,
A plasma control electrode 4B is installed, and thermionic electrons ionize the gas in the plasma generation chamber 4 to generate plasma. An electromagnet 5 that generates a magnetic field to improve ion generation efficiency is provided around the plasma generation chamber, and ions in the plasma are extracted as an ion beam I by an ion extraction mechanism 6.

[Problems to be Solved by the Invention] Although it is possible to form a general-purpose thin film using a two-pole sputtering device or a magnetron sputtering device shown in FIG. 7, the ionization rate of the sputtering device is as low as 1% (and The gas pressure range in which discharge can be performed was limited to 1 mTorr or more.Furthermore, there was a problem in that the film being formed was bombarded with various high-energy particles from the target, making it impossible to form a high-quality thin film with high purity. Furthermore, in Figure 7, 2
The area of the target erosion part shown as B is also small (and the target usage efficiency was not sufficient. Moreover, for some metals with small secondary electron emission coefficients (such as 1 etc.), a sufficiently wide range of operating gases is required. Discharge could not be maintained due to pressure.

On the other hand, as an ion source, the ion source represented by the Kauffman type ion source shown in FIG. 8 is limited to extracting gas ions, and cannot extract metal ions. In response, some ion sources that can also extract metal ions have been proposed, but no ion source has been able to extract metal ions over a large area with a large current.

[Means to solve the problem]

The present invention has been made to solve these conventional problems. The sputtering apparatus of the present invention is a sputtering apparatus that forms a thin film using plasma sputtering, and is composed of a plasma generation chamber and a sample chamber, and a vacuum chamber having a gas inlet, and a vacuum chamber installed in the vacuum chamber, each of which is provided with a negative voltage. first and second targets for performing sputtering by applying a
a magnetic circuit, the first and second targets are arranged such that the magnetic flux from the first magnetic circuit exits one target and enters the other target, and the second target
The target is a cylindrical target provided near the joint between the plasma generation chamber and the sample chamber, and the back surface of the cylindrical target has leakage from the inner surface of the cylindrical target in the height direction of the cylinder. The second magnetic circuit is characterized in that the second magnetic circuit is installed so that a leakage magnetic flux is formed continuously along the inner circumference of the cylinder, and returns to the inner surface of the cylindrical target.

The ion source of the present invention is a sputter-type ion source that extracts ions generated using sputtering by plasma, and includes a vacuum chamber comprising a plasma generation chamber and a sample chamber and having a gas inlet, and installed in the vacuum chamber, first and second targets that perform sputtering by applying a negative voltage to each, a plasma control electrode provided in the plasma generation chamber, an ion extraction mechanism, and a first target provided near the first target. a magnetic circuit, the first and second targets are arranged such that magnetic flux from the first magnetic circuit exits one target and enters the other target, and the second target is connected to the plasma generation chamber. This is a cylindrical target installed near the joining part of the cylindrical target and the sample chamber, and on the back side of the cylindrical target, leakage from the inner surface of the cylindrical target is directed toward the height direction of the cylinder and returns inside the cylindrical target. Features [Function] The present invention is characterized in that the second magnetic circuit is installed so that leakage magnetic flux returning to the surface is continuously formed along the inner peripheral surface of the cylinder. It generates sputtering and uses the target with high efficiency, and can continuously form high-quality thin films at high speed in a high vacuum.

In other words, the present invention uses a combination of a cylindrical target and a plate-like target at the same time to achieve a target arrangement that efficiently reflects high-speed secondary electrons, which are important for high-density plasma generation, into the plasma, thereby realizing high-speed sputtering. . Furthermore, since the cylindrical target surface or the plate-shaped target surface has a structure in which leakage magnetic flux is locally formed and magnetron discharge is superimposed, the erosion area is expanded and the use efficiency of the target is excellent. Furthermore, since the plasma confinement efficiency is high, stable high-speed film formation can be achieved even when using a target with a small secondary electron emission coefficient and difficult to discharge at low voltage.

Further, according to the present invention, the ions in the high-density plasma generated as described above can be extracted with high efficiency by the ion extraction mechanism.

〔Example〕

Examples will be described below based on the drawings.

Embodiment-I FIG. 1 is a sectional view showing the structure of a first embodiment of a sputtering apparatus of the present invention. The vacuum chamber 7 consists of a plasma generation chamber 7A and a sample chamber 7B, into which gas can be introduced through a gas introduction port 8, and can be evacuated by an exhaust system (not shown) connected to an exhaust port 21. A plate-shaped target 12 is installed in the upper part of the plasma generation chamber, and a cylindrical target 13 is installed in the side closer to the sample chamber. More specifically, targets 12 and 1
3 are water-coolable target supporting members 12A and 13, respectively.
A, and each support member is fixed to the plasma generation chamber via insulators 12B and 13B. A protrusion 7C may be provided near the cylindrical target to protect the upper end of the cylindrical target 13 from plasma. Negative voltages are applied to the plate-like target 12 and the cylindrical target 13 by power supplies 14 and 15, respectively. can do. A plate-shaped target electromagnet 16A is arranged outside the vacuum chamber 7 around the plate-shaped target. The cylindrical target 13 is arranged in the direction in which the generated magnetic flux 17 diverges.

On the other hand, a substrate holder 23 is installed on the central axis of the cylindrical target 13 in the sample chamber 7B, on which the substrate 22 can be placed. A shutter 24 is arranged above the substrate 22 to block sputtered particles 18. Further, the substrate holder 23 has a built-in heater and can heat the substrate 22. Further, a direct current or alternating current voltage can be applied to the substrate 22 to bias the substrate during film formation and to perform sputter cleaning of the substrate.

FIG. 2(A) shows an example of the magnetic field strength distribution in the magnetic flux direction in the embodiment of the present invention shown in FIG. 1, and FIG. 2(B),
(C) shows the behavior of electrons.

In this embodiment, the cylindrical target 13 has an inner diameter of 10 c.
+a, a cylindrical and plate-shaped target 12 with a height of 5 cm is used as a disc-shaped target with a diameter of 10 cm, and the interval between both targets is set to 8 cm. Further, on the back surface of the cylindrical target 13, ring-shaped permanent magnets 19A with different polarities are installed at both ends of the cylindrical target 13 as a magnetic circuit for the cylindrical target, so that the magnetic flux is small so as to leak to the surface of the cylindrical target 13. (A pair of both are installed.The magnetic poles are
It is desirable that the direction of the leakage magnetic flux 20A on the cylindrical target 13 is the same as the direction of the magnetic flux 17 generated by the plate-shaped target electromagnet 16A.The leakage magnetic flux is oriented in the height direction on the inner surface of the cylinder, and It is desirable that it be continuous along the circumferential surface. Further, this magnetic circuit for a cylindrical target may use a yoke together with the permanent magnet 19A,
Only a yoke may be used instead of the permanent magnet 19A.

The cylindrical target 13 and the plate-like target 12 are shown in FIG.
As shown in B), the magnetic flux 17 generated by the electromagnet 16A for plate-shaped targets flows into the surfaces of the cylindrical target 13 and the plate-shaped target 12, and the magnetic flux 17 flows from one of the targets 12 and 13. It is set up so that it exits and enters the other target.

A negative potential is applied to the cylindrical target 13 and the plate-shaped target 12 by the cylindrical target power supply 15 and the plate-shaped target power supply 14, respectively, to generate high-density plasma and perform sputtering. When the ions drawn into both targets collide with the target surface,
High speed secondary electrons (γ electrons) 9 are emitted from the target surface.

These high-speed secondary (γ) electrons 9 are accelerated by the electric fields 10 and 11 created by each target, are restrained by the magnetic flux 17 running between the surfaces of these targets, and move at high speed to the other target in a spiral motion.

The high-speed secondary (γ) electrons 9 that have reached the other target are also reflected by the electric field created by that target, and as a result, the high-speed secondary (γ) electrons 9 are trapped between the two targets while moving in a spiral manner. This reciprocating motion of the high-speed secondary (γ) electrons 9 continues until its energy becomes smaller than the binding energy of the magnetic flux, during which time ionization is accelerated by collisions with neutral particles and interaction with plasma.

On the other hand, the high-speed secondary (γ
) The electrons 9 are generated by the leakage magnetic field 20A on the cylindrical target leaked onto the surface of the cylindrical target 13 and the electric field lO on the cylindrical target.
The high-speed secondary electrons 9 are restrained while moving cycloidally on the cylindrical target 13 due to the interaction with the plate-shaped target 13, and the high-speed secondary electrons 9 that escape from the restraint are reflected by the electric field 11 of the plate-shaped target 12 and returned to the plasma. As a result, the high-speed electrons 9 can be very efficiently confined in the plasma, so that the discharge can be maintained stably even at a lower gas pressure on the order of 10-' Torr.

Next, the results of forming a film using the apparatus of the present invention will be explained.

After evacuating the vacuum chamber 7 to 5 x 10-' Torr, Ar gas was introduced at a flow rate of 20 cc/min to bring the gas pressure inside the plasma generation chamber to I x 10-' Torr.
As a cylindrical AI! The film was formed by applying power to the target 13 from 500 to 5000 W. At this time, the film was formed at room temperature without heating the sample stage. As a result, the β film could be deposited stably and efficiently over a long period of time at a deposition rate of 100 to 11,000 n/win.

FIG. 3 shows an example of the erosion distribution on the surface of a cylindrical target.

A shows the erosion state of the target in this example, and B
and C indicate the magnetic circuit 19A in the cylindrical target, respectively.
If there is no plate-like target,
The erosion state of the target when the magnetic circuit 19 is installed in the cylindrical target is shown. As shown in FIG. 3, it can be seen that in the sputtering apparatus of the present invention, the erosion area of the target is wide and the target usage efficiency is excellent.

The sputtering apparatus of the present invention can be used not only for Aβ film formation, but also for almost all film formation, and most reactive gases can be used as the introduced gases, so that reactive sputtering can also be performed. It is also possible to form a compound film using the above method.

Ring-shaped target instead of plate-shaped target.

It is also possible to use a convex target.

Embodiment 2 FIG. 4 is a sectional view showing the structure of a second embodiment of the sputtering apparatus of the present invention. A plate-shaped target 12, a cylindrical target 13, and a substrate holder 23 are installed in the plasma generation chamber 7B, and the basic configuration is the same as in Example I.

The difference between Example 2 and this example is that in this example, a permanent magnet 16B for plate-shaped targets is installed as a magnetic circuit for plate-shaped targets.

In this embodiment, the cylindrical target 13 has an inner diameter of 7 cff.
i. A disk-shaped target with a diameter of 6.5 cm is used as the cylindrical and plate-shaped target 12 with a height of 3 cm, and the interval between both targets is set to 2 cm. A ring-shaped permanent magnet 16B is provided on the back surface of the plate-shaped target as a permanent magnet for the plate-shaped target. This magnetic pole is the cylindrical target 1
It is desirable that the magnetic poles of the permanent magnets 19A disposed at both ends of the plate-shaped target be opposite to those of the permanent magnet that is closer to the plate-shaped target.

The magnetic flux generated by the magnetic circuit installed in this way is
As a result, as explained earlier, high-speed secondary electrons can be confined between both targets. At the same time, high-speed secondary electrons can also be confined on the cylindrical target surface. I can do it.

Next, the results of forming an AffN film using the apparatus of the present invention will be described.

After exhausting the degree of vacuum in the vacuum chamber 7 to 5xlO-'' Torr, Ar gas is pumped at 10 cc/min and nitrogen gas is pumped at 20 cc/min.
The gas pressure in the plasma generation chamber was increased to 3.
As X 10-”Torr, cylindrical l target 1
The film was formed by setting the power input in step 3 at 200 to 2000 W. At this time, the film was formed at room temperature without heating the sample stage. As a result, it was possible to deposit an AβN film continuously and stably and efficiently for a long time at a deposition rate of 10 to 1100 n/win.

Furthermore, it can be seen that in the sputtering apparatus of the present invention, the erosion area of the target is wide and the target usage efficiency is excellent, as in the case of the sputtering apparatus shown in FIG.

The sputtering apparatus of the present invention not only forms a film of AρN, but also
can be used for almost all film formation. Of course, the formation of the metal film attempted in Example I can also be realized.

Embodiment III FIG. 5 is a sectional view showing the structure of a third embodiment of the sputtering apparatus of the present invention. A plate-shaped target 12, a cylindrical target 13, and a substrate holder 23 are installed inside the plasma generation chamber 7, and the basic configuration is the same as that of Example 2.

The difference between Example ■ and this example is that in this example,
A permanent magnet for a plate-shaped target is installed so as to form a closed magnetic flux distribution on the surface of the plate-shaped target.

In this embodiment, the cylindrical target 13 has an inner diameter of 7 cm,
A cylindrical plate-like target 12 with a height of 3 cm and a diameter of 6.
A 5 cm disc-shaped target is used, and the distance between both targets is 1.5 cm. As the plate-shaped target permanent magnet 16B, a ring-shaped permanent magnet and a bar-shaped permanent magnet are provided at the center of the ring-shaped permanent magnet on the back surface of the plate-shaped target.

These magnetic poles are opposite to each other, and the magnetic pole of this ring-shaped permanent magnet is opposite to the magnetic pole of the permanent magnet 19A arranged at both ends of the cylindrical target 13, which is closer to the plate-shaped target. is desirable. Permanent magnet 19
Yoke 19 with A or instead of permanent magnet 19A
B can also be used. Furthermore, in this embodiment, a plate-shaped target yoke 16c is provided on the back surface of the plate-shaped target permanent magnet 16B to stabilize the permanent magnet.

The magnetic flux generated by the magnetic circuit that threw the snow in this way is set to penetrate the surfaces of both targets, and as a result, high-speed secondary electrons can be confined between the two targets as explained in the section on light. At the same time, in this example, since a closed magnetic flux distribution is obtained not only on the cylindrical target surface (also on the plate-shaped target surface), high-speed secondary electrons can be confined even on the plate-shaped target, resulting in high efficiency and high efficiency. Can generate density plasma.

Next, the results of forming a Mo film using the apparatus of the present invention will be explained.

After exhausting the degree of vacuum in the vacuum chamber 7 to 5 x 10-' Torr, Ar gas was introduced at a flow rate of 30 cc per minute, and the gas pressure in the plasma generation chamber was increased to 3 x 10-' Torr.
The film was formed by setting the power input to the cylindrical Mo target 13 at 500 to 5000 W as r. At this time, the film was formed at room temperature without heating the sample stage. As a result, a Mo film could be deposited continuously and stably and efficiently for a long time at a deposition rate of 150 to 1500 nm/min.

Furthermore, it can be seen that in the sputtering apparatus of the present invention, the erosion area of the target is wide and the target usage efficiency is excellent, as in the case of the sputtering apparatus shown in FIG.

The sputtering apparatus of the present invention can be used not only to form a Mo film but also to form almost any film.

Embodiment IV FIG. 6 is a sectional view showing the structure of an embodiment in which the sputtering type ion source according to the present invention is applied as a thin film forming apparatus.

The vacuum chamber 7 consists of a plasma generation chamber 7A and a sample chamber 7B.

The plasma generation chamber 25 includes a plate-shaped target 12, a cylindrical target 13, a plasma control electrode 29, and an ion projection mechanism 31. The sample chamber is equipped with a substrate holder 23 in which a substrate 22 can be placed.

Both targets 12 and 13 are water-cooled to prevent temperature increases due to sputtering. Further, in this embodiment, a gas inlet 28 is also installed in the sample chamber for the purpose of introducing a reaction gas or the like during film deposition. A plate-shaped target electromagnet 16A installed outside the vacuum chamber at one end of the plasma generation chamber 7A.
A cylindrical target 13 is installed in the direction of divergence of the magnetic flux 17 generated by the cylindrical target 13, and an ion extraction mechanism 31 consisting of a hemispherical single-hole grid is installed on the central axis of the cylindrical target 13.

A substrate holder 23 is installed in the sample chamber in the extraction direction of the ion beam (2), and the substrate 22 is supported on it. A shutter 24 is arranged above the substrate 22 so as to be able to block the ion beam 6. Further, the substrate holder 23 has a built-in heater, so that a DC or AC voltage can be applied to the substrate 22.

The magnetic field strength distribution in the magnetic flux direction in this embodiment has almost the same distribution as in the previous embodiment (2).

In this embodiment, the cylindrical target 13 has an inner diameter I D
em, a cylinder with a height of 5 cm, a disk-shaped target with a diameter of 8 cm is used as the plate-shaped target 12, and the interval between both targets is set to 8CI11. Further, in the cylindrical target, ring-shaped permanent magnets 19 with different polarities are installed at both ends of the cylindrical target 13 as a magnetic circuit for the cylindrical target.
At least one pair of A is installed so that magnetic flux leaks to the surface of the cylindrical target 13. It is desirable for the magnetic poles to be such that the direction of the leakage magnetic flux on the cylindrical target is the same as the direction of the magnetic flux 17 generated by the plate-shaped target electromagnet 16^, and this magnetic circuit includes not only the permanent magnet 19A but also , a yoke may be used, or only a yoke may be used instead of a permanent magnet.

The cylindrical target 13 and the plate-shaped target 12 have plate-shaped target electromagnets 16 installed on a part of the surface of the cylindrical target 13 and the plate-shaped target 12 on the outer periphery of the plasma generation chamber.
8, so that the magnetic flux 17 flows in, and the magnetic flux 1
7 is installed so that it exits from one of the two targets 12.13 and enters the other target.

High-density plasma is generated by applying a negative potential to the plasma generation chamber to the above-mentioned cylindrical target 13 and plate-shaped target 12 by the cylindrical target power supply 15 and the plate-shaped target power supply 14, respectively. , to efficiently generate sputtering. This plasma generation mechanism is as explained in Example I.

Moreover, as shown in FIG. 2, high-density plasma can be generated extremely efficiently even on the cylindrical target due to the interaction between the magnetic flux 20A leaking onto the cylindrical target surface and the electric field 10 on the cylindrical target.

In the device of this embodiment, the discharge can be maintained stably even at a lower gas pressure on the order of 10-'Torr.

Some of the particles sputtered from the target are ionized in the plasma. By extracting these ions, it can function as an ion source.

A cylindrical plasma control electrode 29 with an inner diameter of 10 cm and a height of 3 cm installed in the plasma generation chamber 25 is connected to a plasma control electrode power supply 30 that applies a positive voltage to the plasma generation chamber 25.
Apply from In this embodiment, the plasma control electrode 29 is installed in the plasma generation chamber between the plate-shaped target and the cylindrical target via the insulator 32, so that the potential of the plasma can be controlled. That is, the energy of ions can be controlled by the voltage applied to the plasma control electrode. Furthermore, it is preferable to apply a negative voltage from the ion extraction mechanism power supply 33 to the ion extraction mechanism with an effective extraction diameter of 6 cm from the plasma generation chamber, and as a result, ions in the plasma can be extracted in the direction of the substrate 22 as an ion beam I. I can do it. At this time, the board 22
The energy of the ions flying in corresponds to the difference between the potential of the plasma control electrode 29 and the voltage applied to the substrate.

Next, Aβ ions are extracted using the device of the present invention and
The results of forming the film will be explained.

After the sample chamber 27 was evacuated to a vacuum level of 5 x 10-' Torr, Ar gas was introduced at a flow rate of 5 cc per minute, and the gas pressure in the plasma generation chamber was reduced to 4 x 10-' Torr.
As r, the power input to the cylindrical A.degree. C. tube 13 was set to 300 to 4000 W and discharged. The potential applied to the plasma control electrode 29 was 100V, and the potential applied to the spherical porous grid serving as the ion extraction mechanism 31 was 150V.
V, and the potential applied to the substrate was -50 V to extract β ions and deposit a film. At this time, the film was formed at room temperature without heating the sample stage. As a result, 1 to 18n
The Aρ film could be deposited stably and efficiently for a long period of time at a deposition rate of m/II+in. The ionization rate of the extracted A2 particles is 30% when the input power is 500W.
Met.

The sputtering type ion source of the present invention can be used not only for ejecting A°C ions and forming films, but also for almost all film formations, and most reactive gases can be used as the gases to be introduced. I can do it.

In addition, as examples of this ion source, Examples
As shown in I, it is also possible to use a permanent magnet as the magnetic circuit for the plate-shaped target.

In this embodiment, a hemispherical porous grid is used as the ion extraction mechanism 31, but a flat porous grid or a grid consisting of two or three sheets may also be used.

[Effects of the Invention] As explained above, the present invention not only realizes highly efficient thin film formation using sputtering, but also enables thin film formation under low gas pressure. Furthermore, it is characterized by high target usage efficiency.

Strictly speaking, a plate target does not have to be a plate (such as a ball,
A convex target may also be used. Similarly, the cylindrical target shape does not have to be cylindrical, and even if it is polygonal, the essential effects of the present invention remain unchanged.

The power supply for plate-shaped and cylindrical targets is integrated, and the effect remains the same even if they are electrically connected. Further, the power source may be a direct current negative power source, an alternating current power source, or a high frequency power source. However, if both are high frequency power sources, it is desirable to align the same phase as much as possible. Of course, only one of them may be a DC power source.

It is also possible to arrange additional electromagnets, yokes, or permanent magnets to control the magnetic field distribution.

[Brief explanation of drawings]

Figure 1 is a sectional view showing the configuration of an embodiment of the sputtering apparatus of the present invention, and Figure 2 (^) is the magnetic field strength in the magnetic flux direction at the plasma center in the embodiment of the sputtering apparatus of the present invention shown in Figure 1. Figures 2 (B) and (C) showing the distribution are conceptual diagrams explaining the high-density plasma generation mechanism, Figure (B) shows the movement of high-speed (γ) electrons between targets, and Figure (C) 3 is a diagram showing the movement of high-speed (γ) electrons in the shape of a cylindrical target from the top surface of the cylindrical target, and FIG. 3 is a cross-sectional view showing an example of the erosion distribution on the cylindrical target in an embodiment of the sputtering apparatus of the present invention. , FIG. 4 is a cross-sectional view showing the structure of another embodiment of the sputtering apparatus of the present invention, FIG. 5 is a cross-sectional view showing the structure of still another embodiment of the sputtering apparatus of the present invention, and FIG. FIG. 1 is a cross-sectional view showing the configuration of an embodiment in which a sputtering type ion source is applied as a thin film forming apparatus. FIG. 7 is a sectional view showing the configuration of a conventional magnetron sputtering apparatus, and FIG. 8 is a sectional view showing the configuration of a conventional Kauffman type ion source. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Target, 3...Vacuum chamber, 4...Plasma generation chamber, 5...Magnetic field generation electromagnet, 6...Ion extraction mechanism, 7...Vacuum chamber , 7A... Plasma generation chamber, 7B... Sample chamber, 8... Gas inlet, 9... High speed secondary electrons, 10... Electric field above cylindrical target, 11... Plate target Upper electric field, 12... Plate-shaped target, 13... Cylindrical target, 14... Power source for plate-shaped target, 15... Power source for cylindrical target, 16... Magnetic circuit for plate-shaped target, 16A... Electromagnet for plate-shaped target, 16B... Permanent magnet for plate-shaped target, 16c... Yoke for plate-shaped target, 17
... Magnetic flux, 18... Sputtered particles, 19A... Permanent magnet for cylindrical target, 19B...
Yoke for cylindrical target, 20...Leakage magnetic flux on target, 20A...Leakage magnetic flux on cylindrical target, 20B...
Leakage magnetic flux on the plate-shaped target, 21... Exhaust port, 22... Substrate, 23... Substrate holder 24... Shutter, 28... Gas inlet for sample chamber, 29... Plasma control electrode , 30... Power source for plasma control electrode, 31... Ion extraction mechanism, 32... Insulator, 33... Power source for ion extraction mechanism.

Claims (1)

[Claims] 1) A sputtering apparatus for forming a thin film using plasma sputtering, comprising: a vacuum chamber comprising a plasma generation chamber and a sample chamber and having a gas inlet; first and second targets that perform sputtering by applying a negative voltage to each; and a first magnetic circuit provided near the first target, and the first and second targets are connected to the first target. The second target is a cylindrical target provided near the joint between the plasma generation chamber and the sample chamber; On the back surface of the cylindrical target, a leakage magnetic flux is continuously formed that leaks from the inner surface of the cylindrical target, points in the height direction of the cylinder, and returns to the inner surface of the cylindrical target again along the inner periphery of the cylinder. 1. A sputtering apparatus characterized in that a second magnetic circuit is installed so that the second magnetic circuit 2) The first magnetic circuit is provided on the back surface of the first target, and is continuous within the plate-shaped target surface such that it leaks from the first target surface and returns to the plate-shaped target surface. The sputtering apparatus according to claim 1, characterized in that the magnetic circuit is such that a leakage magnetic flux is formed. 3) The direction of the magnetic flux between both targets formed by the first magnetic circuit is the same as the direction of the magnetic flux leaked onto the cylindrical target surface by the second magnetic circuit. Or the sputtering apparatus according to item 2. 4) In a sputter type ion source that extracts ions generated by using sputtering by plasma, a vacuum chamber consisting of a plasma generation chamber and a sample chamber and having a gas inlet, and a vacuum chamber installed in the vacuum chamber, each with a negative voltage first and second targets that perform sputtering by applying a voltage, a plasma control electrode provided within the plasma generation chamber, an ion extraction mechanism, and a first magnetic circuit provided near the first target. The first and second targets are arranged such that the magnetic flux generated by the first magnetic circuit exits one target and enters the other target, and the second target is connected to the plasma generation chamber and the sample chamber. It is a cylindrical target provided near the joint part of the cylindrical target, and on the back side of the cylindrical target, water leaks from the inner surface of the cylindrical target, faces in the height direction of the cylinder, and returns onto the inner surface of the cylindrical target. A sputter type ion source characterized in that a second magnetic circuit is installed so that a returning leakage magnetic flux is continuously formed along the inner circumference of the cylinder. 5) The sputter type ion source according to claim 4, wherein the plasma control electrode is installed between the first target and the second target. 6) The first magnetic circuit is provided on the back surface of the first target, and is continuous within the first target surface such that it leaks from above the first target surface and returns to the first target surface. The sputter type ion source according to claim 4 or 5, characterized in that the magnetic circuit is such that a leakage magnetic flux is formed. 7) The direction of the magnetic flux between both targets formed by the first magnetic circuit is the same as the direction of the magnetic flux leaked onto the cylindrical target surface by the cylindrical target magnetic circuit. 7. The sputter type ion source according to any one of 4 to 6. 8) Claim characterized in that the ion extraction mechanism is composed of one or more flat plates or a convex porous grid, and the ion extraction mechanism is installed on the central axis of the cylindrical target. 8. The sputter type ion source according to any one of 4 to 7.