JPH0448664A - Array semiconductor laser edge excitation solid state laser - Google Patents

Array semiconductor laser edge excitation solid state laser

Info

Publication number
JPH0448664A
JPH0448664A JP15402590A JP15402590A JPH0448664A JP H0448664 A JPH0448664 A JP H0448664A JP 15402590 A JP15402590 A JP 15402590A JP 15402590 A JP15402590 A JP 15402590A JP H0448664 A JPH0448664 A JP H0448664A
Authority
JP
Japan
Prior art keywords
state laser
laser
semiconductor laser
solid state
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15402590A
Other languages
Japanese (ja)
Other versions
JPH07112083B2 (en
Inventor
Satoru Yamaguchi
哲 山口
Hirofumi Imai
浩文 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP2154025A priority Critical patent/JPH07112083B2/en
Publication of JPH0448664A publication Critical patent/JPH0448664A/en
Publication of JPH07112083B2 publication Critical patent/JPH07112083B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Lasers (AREA)

Abstract

PURPOSE:To acquire a semiconductor laser excitation solid state laser which produces solid state laser output light effectively by providing an optical coupler which consists of a lens array and a second lens used as a focusing lens. CONSTITUTION:An Nd:YAG laser is used as a solid state laser element 4. Diachronic coating is performed for one edge face and a resonator is formed of the face as an excitation surface and of an output mirror 5. The used array semiconductor laser 1 is composed of an array which is formed by wiring 20 active layer stripes 7 of 100mum width at 500mum interval. A condenser lens array 2 is composed of 20 distribution factor lenses of 500mum width and condenses and collimates each projection light from 20 stripes. Then, 20 laser beams are focused by a second lens 3 and superposed at one place for end excitation of a solid state laser element 4 which consists of Nd:YAG rod. A highly efficient solid state laser of good beam quality and high output can be realized in this way.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、端面光源としての半導体レーザ出力を高効率
て光結合し、固体レーザ素子を光励起する半導体レーザ
励起固体レーザに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor laser pumped solid-state laser that optically couples the output of a semiconductor laser as an edge light source with high efficiency and optically pumps a solid-state laser element.

[従来の技術] 半導体レーザを励起光源として用いた固体レーザが、高
効率、長寿命、小型化が図れることから、注目を集めて
いる。半導体レーザ励起固体レーザにおける、固体レー
ザの光軸方向から光励起する端面励起方式(例えば特開
昭58−52889号参照)ては、固体レーザの発振の
空間モートに半導体レーザ出力光による励起空間をうま
くマツチングさせることにより、高効率て単一基本槽モ
ート発振を実現できる。
[Prior Art] Solid-state lasers using semiconductor lasers as excitation light sources are attracting attention because of their high efficiency, long life, and miniaturization. In a semiconductor laser-pumped solid-state laser, the end-pumping method (for example, see Japanese Patent Application Laid-open No. 58-52889), in which the solid-state laser is optically pumped from the optical axis direction, effectively uses the excitation space by the semiconductor laser output light as the spatial mote of the solid-state laser's oscillation. By matching, highly efficient single basic tank moat oscillation can be realized.

[発明が解決しようとする課題] 半導体レーザはビーム発散角か大きいため集光系を半導
体レーザに接近して集光する必要があり発振光の集光は
容易ではない。半導体レーザ励起固体レーザの高出力化
のためには、励起用の半導体レーザを高出力化する必要
かある。半導体レーザはストライプ状の活性層からレー
ザ光か出射するが、単一のストライプレーザでは出力に
限界かあり、これ以上の出力を得るためには、複数のス
トライプを並べたアレイ状にしなければならない。
[Problems to be Solved by the Invention] Since a semiconductor laser has a large beam divergence angle, it is necessary to bring a condensing system close to the semiconductor laser to condense the light, and condensing the oscillated light is not easy. In order to increase the output of a semiconductor laser-excited solid-state laser, it is necessary to increase the output of the excitation semiconductor laser. Semiconductor lasers emit laser light from a striped active layer, but a single striped laser has a limit to its output, and in order to obtain higher output, it is necessary to form an array of multiple stripes. .

このようなアレイ半導体レーザな励起光源として用いよ
うとすると、アレイの幅は1cm程の長さに渡るので、
通常のレンズ系を用いて複数ビームを1つのスポット状
に絞り込むことは測成できないため励起効率の良い端面
励起方式が採用できず、側面励起方式にしか適用できな
かった(例えばR,Burnham and^、 D、
 Hays、 Opt、 Lett、、14゜27 (
1989); M、 K、 Reed、 W、 J、 
Koxlovsky、R,L。
When trying to use such an array semiconductor laser as an excitation light source, the width of the array is about 1 cm, so
Since it is impossible to narrow down multiple beams into a single spot using a normal lens system, it is not possible to adopt an end-face excitation method with good excitation efficiency, and it can only be applied to a side-excitation method (for example, R, Burnham and ,D,
Hays, Opt, Lett, 14°27 (
1989); M, K., Reed, W. J.
Koxlovsky, R.L.

Byer、 G、 L、 Harnagel、and 
P、 S、 Cross、 Opt。
Byer, G. L., Harnagel, and
P, S, Cross, Opt.

Lett、、1:l、 204 (198B)等参照)
Lett, 1:l, 204 (198B), etc.)
.

本発明は、かかる状況に鑑みてなされたもので、マルチ
ストライプのアレイ半導体レーザから出る発散角か大き
い多数の複数ビームを集光し、固体レーザの発振の空間
モードに半導体レーザ出力光による励起空間をマツチン
グするように、効率よく固体レーザ出力光を生起せしめ
る半導体レーザ励起固体レーザを提供することを目的と
する。
The present invention was made in view of this situation, and it focuses a large number of beams with a large divergence angle emitted from a multi-striped array semiconductor laser, and excite the spatial mode of the solid-state laser oscillation with the semiconductor laser output light. An object of the present invention is to provide a semiconductor laser-excited solid-state laser that efficiently generates solid-state laser output light so as to match.

[課題を解決するための手段] 上記の目的を達成するために、この発明の手段として、
アレイ半導体レーザ出力を集光し固体レーザ素子を光励
起するアレイ半導体レーザ励起固体レーザにおいて、分
布屈折率レンズをアレイ半導体レーザの各ストライプに
対応して並べ、アレイ半導体レーザ出力を集光してコリ
メートするレンズアレイと、コリメートされた各ストラ
イプ光を一括して集光して一箇所に重ね合わせ、固体レ
ーザ素子を端面励起するためのフォーカシングレンズと
して用いる第2のレンズと、からなる光結合器を備える
ものである。
[Means for Solving the Problem] In order to achieve the above object, as a means of this invention,
In an array semiconductor laser excitation solid-state laser that focuses the array semiconductor laser output and optically pumps the solid-state laser element, distributed index lenses are arranged corresponding to each stripe of the array semiconductor laser to focus and collimate the array semiconductor laser output. An optical coupler includes a lens array and a second lens used as a focusing lens for collectively condensing each collimated stripe light and superimposing it on one spot to excite the solid-state laser element at the end face. It is something.

[作用] 半導体レーザ励起固体レーザの横モードの特性は、端面
励起方式の場合、固体レーザ素子内の光励起空間の形状
で決まる。このため、単一基本横モードを得るためには
、絞った励起光の強度分布をなるべくガウス分布に近づ
け、固体レーザ素子内に一定の大きさのビームスポット
を安定的に作ってやることが好ましい。
[Operation] In the case of an end-pumped solid-state laser, the transverse mode characteristics of a semiconductor laser-pumped solid-state laser are determined by the shape of the optical pumping space within the solid-state laser element. Therefore, in order to obtain a single fundamental transverse mode, it is preferable to make the intensity distribution of the focused excitation light as close to a Gaussian distribution as possible, and to stably create a beam spot of a certain size within the solid-state laser element. .

半導体レーザ励起固体レーザの光結合器とじて屈折率が
中心軸から外周面に向かって放射線状に分布して異なっ
ている円柱状の光学ガラス体である分布屈折率レンズを
用いると発散角の大きい半導体レーザ光を容易に集光す
ることかてきる。
When used as an optical coupler for a semiconductor laser-pumped solid-state laser, a distributed index lens, which is a cylindrical optical glass body whose refractive index is distributed radially from the central axis to the outer circumferential surface and differs, has a large divergence angle. Semiconductor laser light can be easily focused.

このような特性を持つ分布屈折率レンズを用いて各スト
ライプからのレーザ光を集光できることを利用し、アレ
イ半導体レーザの各々のストライプからの出射光を、分
布屈折率レンズアレイで集光し、第2のレンズて全体光
を一つのビームスポットに絞ってやり固体レーザ素子を
励起すれば、高品質の横モード光か得られる。
Taking advantage of the fact that laser light from each stripe can be focused using a distributed index lens with such characteristics, the light emitted from each stripe of an array semiconductor laser is focused using a distributed index lens array. High-quality transverse mode light can be obtained by focusing the entire light into a single beam spot using the second lens and exciting the solid-state laser element.

[実施例] 以下、実施例に基ずいて本発明を説明する。[Example] The present invention will be explained below based on Examples.

第1図はアレイ半導体レーザ光を集光し固体レーザ素子
を端面励起する固体レーザの模式図である。第1図に示
すごとく、固体レーザ素子4としてNd:YAGレーザ
を用い、一方の端面をダイクロイックコーティング(N
d : YAGレーザ発振波長11064nて高反射(
HR)、半導体レーザ光波長808nmで高透過(AR
)”) し、その面を励起面とし、アウトプットミラー
5とて共振器を構成する。用いたアレイ半導体レーザ1
は幅か1100uLの活性層ストライプ7か20本50
0pm間隔て配列したアレイからなる。集光レンズアレ
イ2は輻500uLmの分布屈折率レンズ20個からな
り20本のストライプからの出射光の各々を集光しコリ
メートする。20本のレーザヒ′−ムを第2のレンズ3
てフォーカシングし一箇所に重ね合わせて、Nd:YA
Gロットからなる固体レーザ素子4を端面励起する。
FIG. 1 is a schematic diagram of a solid-state laser that focuses array semiconductor laser light and excites a solid-state laser element at its end face. As shown in FIG. 1, an Nd:YAG laser is used as the solid-state laser element 4, and one end face is coated with dichroic
d: YAG laser oscillation wavelength 11064n and high reflection (
HR), high transmittance at semiconductor laser light wavelength of 808nm (AR
)"), and the surface is used as an excitation surface, and the output mirror 5 constitutes a resonator. The array semiconductor laser 1 used
is 7 or 20 active layer stripes with a width of 1100uL or 50
It consists of an array arranged at 0 pm intervals. The condenser lens array 2 is composed of 20 distributed index lenses each having a radiation of 500 uLm, and condenses and collimates each of the light emitted from the 20 stripes. The 20 laser beams are connected to the second lens 3.
Focus and overlap in one place, Nd:YA
The solid-state laser device 4 consisting of G lots is end-face excited.

このようにして端面励起した半導体レーザ励起固体レー
ザに於て、5Wの半導体レーザ(波長808nm)出力
てNd:YAGレーザ基本波(波長101064n出力
1.5Wの高出力発振か得られている。
In the semiconductor laser-excited solid-state laser end-pumped in this manner, high-output oscillation of the Nd:YAG laser fundamental wave (wavelength: 101,064 nm, output: 1.5 W) was obtained by outputting a semiconductor laser of 5 W (wavelength: 808 nm).

[発明の効果] 以上説明したとおり、本発明の如く、光結合器として、
上記のような構成をもつ半導体レーザ励起固体レーザは
、従来のアレイ半導体レーザては困難てあった端面励起
を可能にし、効率が高くビーム買の良い高出力の固体レ
ーザな実現できる。
[Effect of the invention] As explained above, as the present invention, as an optical coupler,
A semiconductor laser-pumped solid-state laser having the above configuration enables end-face pumping, which has been difficult with conventional array semiconductor lasers, and can realize a high-output solid-state laser with high efficiency and good beam power.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はアレイ半導体レーザの各ストライプからの出射
光を分布屈折率レンズアレイを用いて集光してコリメー
トし第2のレンズでフォーカシングして一箇所に重ね合
せて光励起する半導体レーザ励起固体レーザの模式図で
ある。 図中。 アレイ半導体レーザ 分布屈折率レンズアレイ レンズ 固体レーザ素子 アウトプ・ントミラー 出力光 活性層ストライプ
Figure 1 shows a semiconductor laser-pumped solid-state laser in which light emitted from each stripe of an array semiconductor laser is collected and collimated using a distributed index lens array, focused by a second lens, and superimposed at one location for optical excitation. FIG. In the figure. Array semiconductor laser distributed refractive index lens array lens solid state laser element output mirror output light active layer stripe

Claims (1)

【特許請求の範囲】[Claims] アレイ半導体レーザ出力を集光し固体レーザ素子を光励
起するアレイ半導体レーザ励起固体レーザにおいて、分
布屈折率レンズをアレイ半導体レーザの各ストライプに
対応して並べ、アレイ半導体レーザ出力を集光してコリ
メートするレンズアレイと、コンメートされた各ストラ
イプ光を一括して集光して一箇所に重ね合わせ、固体レ
ーザ素子を端面励起するためのフォーカシングレンズと
して用いる第2のレンズと、からなる光結合器を備えた
ことを特徴とするアレイ半導体レーザ端面励起固体レー
ザ。
In an array semiconductor laser excitation solid-state laser that focuses the array semiconductor laser output and optically pumps the solid-state laser element, distributed index lenses are arranged corresponding to each stripe of the array semiconductor laser to focus and collimate the array semiconductor laser output. Equipped with an optical coupler consisting of a lens array and a second lens used as a focusing lens for collectively condensing each commated stripe light and superimposing them on one spot to excite the solid-state laser element at the end face. An array semiconductor laser edge-pumped solid-state laser characterized by:
JP2154025A 1990-06-14 1990-06-14 Array semiconductor laser Edge-pumped solid-state laser Expired - Fee Related JPH07112083B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2154025A JPH07112083B2 (en) 1990-06-14 1990-06-14 Array semiconductor laser Edge-pumped solid-state laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2154025A JPH07112083B2 (en) 1990-06-14 1990-06-14 Array semiconductor laser Edge-pumped solid-state laser

Publications (2)

Publication Number Publication Date
JPH0448664A true JPH0448664A (en) 1992-02-18
JPH07112083B2 JPH07112083B2 (en) 1995-11-29

Family

ID=15575263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2154025A Expired - Fee Related JPH07112083B2 (en) 1990-06-14 1990-06-14 Array semiconductor laser Edge-pumped solid-state laser

Country Status (1)

Country Link
JP (1) JPH07112083B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0649202A1 (en) * 1993-10-15 1995-04-19 Toyota Jidosha Kabushiki Kaisha Semiconductor laser and method of manufacturing the same
JPH09199774A (en) * 1996-01-22 1997-07-31 Nec Corp Laser-diode-excited solid-state laser device
KR20000014317A (en) * 1998-08-19 2000-03-06 구자홍 High-output semiconductor laser diode-array structure
US7082150B2 (en) 2002-09-17 2006-07-25 Kabushiki Kaisha Topcon Semiconductor laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076307U (en) * 1983-10-28 1985-05-28 三菱電機株式会社 optical array module
JPH0254982A (en) * 1988-07-20 1990-02-23 Amoco Corp Light pumping type laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076307U (en) * 1983-10-28 1985-05-28 三菱電機株式会社 optical array module
JPH0254982A (en) * 1988-07-20 1990-02-23 Amoco Corp Light pumping type laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0649202A1 (en) * 1993-10-15 1995-04-19 Toyota Jidosha Kabushiki Kaisha Semiconductor laser and method of manufacturing the same
US5604761A (en) * 1993-10-15 1997-02-18 Toyota Jidosha Kabushiki Kaisha Layered semiconductor laser having solder laminations and method of making same
JPH09199774A (en) * 1996-01-22 1997-07-31 Nec Corp Laser-diode-excited solid-state laser device
US5859868A (en) * 1996-01-22 1999-01-12 Nec Corporation Solid-state laser device which is pumped by light output from laser diode
KR20000014317A (en) * 1998-08-19 2000-03-06 구자홍 High-output semiconductor laser diode-array structure
US7082150B2 (en) 2002-09-17 2006-07-25 Kabushiki Kaisha Topcon Semiconductor laser device

Also Published As

Publication number Publication date
JPH07112083B2 (en) 1995-11-29

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