JPH0449593Y2 - - Google Patents
Info
- Publication number
- JPH0449593Y2 JPH0449593Y2 JP873388U JP873388U JPH0449593Y2 JP H0449593 Y2 JPH0449593 Y2 JP H0449593Y2 JP 873388 U JP873388 U JP 873388U JP 873388 U JP873388 U JP 873388U JP H0449593 Y2 JPH0449593 Y2 JP H0449593Y2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric vibrator
- semiconductor
- capacitor
- ultrasonic
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000003990 capacitor Substances 0.000 claims description 17
- 238000007599 discharging Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Transducers For Ultrasonic Waves (AREA)
- Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)
Description
【考案の詳細な説明】
[産業上の利用分野]
この考案は例えば圧電振動子より超音波パルス
を送信するパルス発生回路、特に超音波パルス信
号の波形の改良に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a pulse generation circuit that transmits ultrasonic pulses from a piezoelectric vibrator, for example, and particularly relates to an improvement in the waveform of an ultrasonic pulse signal.
[従来の技術]
第4図は従来のパルス発生回路の一例を示す回
路図、
図において、1は超音波パルスの送信を制御す
る第1半導体、2は音響−電気変換を行う圧電振
動子、3はダイオード、5は充放電作用を行うコ
ンデンサ、6は圧電振動子2へ励振信号を伝送す
る同軸ケーブル、7はパルス発生回路を作動させ
るタイミング信号が与えられる入力端子、8は受
信回路、C1,C2はコンデンサ、R1,R2,R3,R4
は抵抗器である。[Prior Art] FIG. 4 is a circuit diagram showing an example of a conventional pulse generation circuit. In the figure, 1 is a first semiconductor that controls the transmission of ultrasonic pulses, 2 is a piezoelectric vibrator that performs acoustic-electrical conversion, 3 is a diode, 5 is a capacitor that performs charging and discharging functions, 6 is a coaxial cable that transmits an excitation signal to the piezoelectric vibrator 2, 7 is an input terminal to which a timing signal to operate the pulse generation circuit is given, 8 is a receiving circuit, C 1 , C2 are capacitors, R1 , R2 , R3 , R4
is a resistor.
従来のパルス発生回路は上記のように構成さ
れ、入力端子7から第1半導体1へ正のパルス信
号が与えられると、第1半導体1が導通されコン
デンサ5に充電された電荷は第1半導体1、ケー
ブル6、圧電振動子2、ダイオード3、抵抗器
R4を経て放電される、圧電振動子2は励振され
て圧電効果により固有の振動現象を呈する。 The conventional pulse generation circuit is configured as described above, and when a positive pulse signal is applied from the input terminal 7 to the first semiconductor 1, the first semiconductor 1 becomes conductive and the electric charge charged in the capacitor 5 is transferred to the first semiconductor 1. , cable 6, piezoelectric vibrator 2, diode 3, resistor
The piezoelectric vibrator 2 discharged through R 4 is excited and exhibits a unique vibration phenomenon due to the piezoelectric effect.
第5図は従来の圧電振動子の動作波形を示し、
圧電振動子2は振幅Aの超音波パルスを発生し固
有振動周波数の半周期後減衰振動を行い、圧電振
動子2より被検材へ超音波パルスを送信する。被
検材より反射された反射パルスは圧電振動子2に
て受信されコンデンサC2を経て受信回路8へ供
給される。 Figure 5 shows the operating waveform of a conventional piezoelectric vibrator.
The piezoelectric vibrator 2 generates an ultrasonic pulse of amplitude A, performs damped vibration after half a period of the natural vibration frequency, and transmits the ultrasonic pulse from the piezoelectric vibrator 2 to the material to be inspected. The reflected pulse reflected from the test material is received by the piezoelectric vibrator 2 and supplied to the receiving circuit 8 via the capacitor C2.
超音波パルスの出力を増大させるためコンデン
サ5の充電電位を高くしたり、圧電振動子2の共
振時のQや圧電振動子2の周辺回路インピーダン
スを大きくすると、減衰振動の振幅も同時に大き
くなり所定レベルに達する減衰時間も増加する。 In order to increase the output of ultrasonic pulses, when the charging potential of the capacitor 5 is increased, or when the Q of the piezoelectric vibrator 2 at resonance and the peripheral circuit impedance of the piezoelectric vibrator 2 are increased, the amplitude of the damped vibration also increases at the same time, and the amplitude of the damped vibration increases at the same time. The decay time to reach the level also increases.
[考案が解決しようとする課題]
上記のような従来のパルス発生回路では、圧電
振動子2の発生する減衰振動は圧電振動子2を構
成する背板などの音響損失ならびに圧電振動子2
負荷の電気回路インピーダンスによつて決定さ
れ、超音波パルスの送信振幅に比例して減衰振動
の振幅ならびに減衰時間が大きくなる。[Problem to be solved by the invention] In the conventional pulse generation circuit as described above, the damped vibration generated by the piezoelectric vibrator 2 is caused by acoustic losses such as the back plate constituting the piezoelectric vibrator 2 and the piezoelectric vibrator 2.
It is determined by the electrical circuit impedance of the load, and the amplitude and damping time of the damped vibration increase in proportion to the transmission amplitude of the ultrasonic pulse.
従つて、圧電振動子2から送信される超音波パ
ルスを用いて厚さ測定を行うとき、厚さの薄い被
検材の底面からの反射パルスや被検材表面近傍か
らの反射パルスは送信される超音波パルスの減衰
領域と重合して、反射パルスの識別が困難とな
り、その領域における測定は行えない。 Therefore, when measuring the thickness using the ultrasonic pulses transmitted from the piezoelectric vibrator 2, the reflected pulses from the bottom of the thin specimen material and the reflected pulses from near the surface of the specimen material are not transmitted. This overlaps with the attenuation region of the ultrasonic pulse, making it difficult to identify the reflected pulse and making measurements in that region impossible.
1個の探触子を用いて超音波パルスの送信なら
びに受信を行う測定器に利用したとき測定の不感
帯域が大きくなる。 When used in a measuring instrument that transmits and receives ultrasonic pulses using one probe, the dead band of measurement becomes large.
また送信時には圧電振動子2に並列接続される
抵抗器R4にも分流されるため送信エネルギが減
少し、受信時には上記抵抗器R4のため受信信号
レベルが低下するという問題点があつた。 Furthermore, during transmission, the power is shunted to the resistor R4 connected in parallel to the piezoelectric vibrator 2, so the transmitted energy is reduced, and during reception, the level of the received signal is lowered due to the resistor R4 .
この考案はかかる問題点を解決するためになさ
れたもので、送信される超音波パルスの振幅を大
きくしても、減衰振動の振幅ならびに減衰時間が
小さくできるパルス発生回路を得ることを目的と
する。 This invention was made to solve this problem, and the purpose is to obtain a pulse generation circuit that can reduce the amplitude and decay time of damped vibration even if the amplitude of the transmitted ultrasonic pulse is increased. .
[課題を解決するための手段]
こり考案に係るパルス発生回路は、第1半導体
の導通により超音波パルスの送信を行う圧電振動
子と並列にコレクタとエミツタが接続され、コレ
クタとベース間に抵抗器を、ベースとエミツタ間
にコンデンサの放電電流が導電される極性にダイ
オードを設け、圧電振動子の固有共振周波数の半
周期後に導通する第2半導体を設けたものであ
る。[Means for Solving the Problems] The pulse generation circuit according to the invention has a collector and an emitter connected in parallel with a piezoelectric vibrator that transmits ultrasonic pulses by conduction of a first semiconductor, and a resistor between the collector and the base. A diode is provided between the base and the emitter at a polarity where the discharge current of the capacitor is conducted, and a second semiconductor is provided which becomes conductive after a half cycle of the natural resonant frequency of the piezoelectric vibrator.
[作用]
この考案においては第1半導体の導通によるコ
ンデンサCからの放電電流は、その多くが圧電振
動子へ供給されるため効率のよい超音波パルスの
送信ができ、超音波パルスの半周期後は第2半導
体が導通し圧電振動子の減衰振動を吸収するため
減衰振動を急速に減少させることができる。[Function] In this device, most of the discharge current from the capacitor C due to conduction of the first semiconductor is supplied to the piezoelectric vibrator, so that efficient ultrasonic pulse transmission is possible, and after half a period of the ultrasonic pulse, Since the second semiconductor conducts and absorbs the damped vibration of the piezoelectric vibrator, the damped vibration can be rapidly reduced.
また受信信号の受信時には第2半導体は遮断状
態にあるので、高インピーダンスを呈し圧電振動
子は感度が高くなるので効率の良い受信回路が得
られる。 Further, since the second semiconductor is in a cut-off state when receiving a reception signal, it exhibits high impedance and the piezoelectric vibrator has high sensitivity, so that an efficient reception circuit can be obtained.
[実施例]
本考案の一実施例を添付図面を参照して詳細に
説明する。[Example] An example of the present invention will be described in detail with reference to the accompanying drawings.
第1図はこの考案の一実施例を示す回路図であ
り、
図において、1〜3,5〜8は上記従来回路と
同一である。4は圧電振動子2へ並列に設けられ
一方向に導通する第2半導体であり、本例では
NPN型トランジスタを用いる。 FIG. 1 is a circuit diagram showing an embodiment of this invention. In the figure, numerals 1 to 3 and 5 to 8 are the same as the conventional circuit described above. 4 is a second semiconductor provided in parallel to the piezoelectric vibrator 2 and conductive in one direction; in this example,
Uses an NPN transistor.
上記のように構成されたパルス発生回路におい
ては、入力パルスが与えられると第1半導体が導
通し、電源電圧+VCCと同一電位に充電された
コンデンサ5の電荷は第1半導体1、圧電振動子
2、同軸ケーブル6、ダイオード3よりなるイン
ピーダンス回路を経て放電される。NPN型トラ
ンジスタの第2半導体4はこのときベースが負電
位にあり高インピーダンスで動作への影響は小さ
い。 In the pulse generation circuit configured as described above, when an input pulse is applied, the first semiconductor becomes conductive, and the charge of the capacitor 5 charged to the same potential as the power supply voltage +VCC is transferred to the first semiconductor 1, the piezoelectric vibrator 2 , a coaxial cable 6, and an impedance circuit consisting of a diode 3. At this time, the base of the second semiconductor 4 of the NPN transistor is at a negative potential and has a high impedance, so that the influence on the operation is small.
圧電振動子2は固有共振周波数を有し且つ誘電
体コンデンサと類似の電気特性を呈する他に機械
的運動体ならびに発電体としての作用をそなえ、
圧電振動子2へ電界が加えられると圧電振動子2
はひずみ(対力)を生じて超音波を送信すると同
時にその表面に電荷を発生する電気分極が行われ
る。 The piezoelectric vibrator 2 has a natural resonant frequency and exhibits electrical characteristics similar to those of a dielectric capacitor, and also functions as a mechanically moving body and a power generating body.
When an electric field is applied to the piezoelectric vibrator 2, the piezoelectric vibrator 2
generates strain (coupling force) and transmits ultrasonic waves, and at the same time electric polarization occurs that generates a charge on its surface.
上記コンデンサ5の放電により圧電振動子2は
固有共振周波数の超音波パルスを送信し、圧電振
動子2の表面に分極された電荷は図示のとおりの
極性となる。圧電振動子2の固有共振周波数の半
周期後減衰振動が発生する。 Due to the discharge of the capacitor 5, the piezoelectric vibrator 2 transmits an ultrasonic pulse having a natural resonance frequency, and the electric charge polarized on the surface of the piezoelectric vibrator 2 has the polarity as shown in the figure. Damped vibration occurs after half a period of the natural resonance frequency of the piezoelectric vibrator 2.
このとき第2半導体4のNPN型トランジスタ
のコレクタはエミツタに対し正電位となり、ベー
スーエミツタの通電により第2半導体4導通して
こコレクタインピーダンスが小さくなり、圧電振
動子2の表面に分極された電荷は第2半導体4の
コレクタ電流として短時間に放電される。従つて
圧電振動子2のひずみの発生が小さくなりこれに
ともなつて電気分極も小さく減衰振動は急速に減
衰する。 At this time, the collector of the NPN type transistor of the second semiconductor 4 has a positive potential with respect to the emitter, and the second semiconductor 4 becomes conductive due to base-emitter current conduction, and the collector impedance becomes small, and the polarized charges on the surface of the piezoelectric vibrator 2 are transferred to the second semiconductor 4. 2 is discharged as a collector current of the semiconductor 4 in a short time. Therefore, the generation of strain in the piezoelectric vibrator 2 is reduced, and along with this, the electrical polarization is also reduced, and the damped vibration is rapidly attenuated.
上記のとおりコンデンサ5の放電による超音波
パルス送信時には第2半導体は不導通で、圧電振
動子2の負荷となる電気回路は高インピーダンス
を呈し圧電振動子2から所定レベルの超音波パル
スが送信され、超音波パルス送信の半周期後は圧
電振動子2へ並列に設けられた第2半導体が導通
しそのコレクタインピーダンスが小さくなるので
減衰振動の振幅が急速に低下して、所定のレベル
に減衰するまでの減衰時間も非常に小さくでき
る。 As mentioned above, when the ultrasonic pulse is transmitted due to the discharge of the capacitor 5, the second semiconductor is non-conductive, the electric circuit serving as the load of the piezoelectric vibrator 2 exhibits high impedance, and the ultrasonic pulse of a predetermined level is transmitted from the piezoelectric vibrator 2. After half a period of ultrasonic pulse transmission, the second semiconductor provided in parallel to the piezoelectric vibrator 2 conducts and its collector impedance decreases, so the amplitude of the damped vibration rapidly decreases and is attenuated to a predetermined level. The decay time can also be made very small.
第2図はこの考案の他の実施例を示す回路図で
あり、
図において、1〜8は上記実施例と同一である
が、第2半導体4にPNP型トランジスタを用い
たとき、第1半導体のコレクタに負電圧の−
VCC電源を加え第2半導体4のベースーエミツ
タ間に設けられるダイオード3の極性を逆方向に
する。 FIG. 2 is a circuit diagram showing another embodiment of this invention. In the figure, 1 to 8 are the same as those in the above embodiment, but when a PNP transistor is used as the second semiconductor 4, the first semiconductor - of negative voltage on the collector of
VCC power is applied to reverse the polarity of the diode 3 provided between the base and emitter of the second semiconductor 4.
従つて圧電振動子2から送信される超音波パル
スの極性は反転される。その他の動作は第2半導
体4にNPN型トランジスタを用いたときと同一
である。 Therefore, the polarity of the ultrasonic pulse transmitted from the piezoelectric vibrator 2 is reversed. Other operations are the same as when an NPN transistor is used as the second semiconductor 4.
第3図に圧電振動子の動作波形を示す、超音波
パルス振幅Aに対して減衰振動振幅は著しく小さ
くなる。 FIG. 3 shows the operating waveform of the piezoelectric vibrator, and the damped vibration amplitude is significantly smaller than the ultrasonic pulse amplitude A.
上記のとおり、超音波パルスの減衰振動の減衰
時間が小さくなり、近距離からの反射パルスとの
干渉が改良され反射パルスの識別が容易にでき
る。 As described above, the decay time of the damped oscillation of the ultrasonic pulse is shortened, the interference with reflected pulses from a short distance is improved, and the reflected pulses can be easily identified.
超音波厚さ計に利用したとき塗膜や薄板などの
厚さの薄い被検体の測定が行え、
超音波探傷における被検材表面近傍の欠陥検出
が分解能よくでき、
更に超音波を空中へ放射する超音波距離計に利
用したとき近距離からの測定ができる。 When used as an ultrasonic thickness gauge, it can measure thin objects such as paint films and thin plates, and detect defects near the surface of the test material with high resolution in ultrasonic flaw detection, and can also emit ultrasonic waves into the air. When used with an ultrasonic rangefinder, measurements can be taken from short distances.
第2半導体4としてNPN型ならびにPNP型の
何れのトランジスタについて全く同一作用を行う
ことができ、
第2半導体4は上記半導体に限定されるもので
はなく、他の半導体を用いても同様に送信時と送
信後における圧電振動子2の負荷となる電気回路
のインピーダンス制御をすることができる。 The second semiconductor 4 can perform the same function with either an NPN type or a PNP type transistor, and the second semiconductor 4 is not limited to the above-mentioned semiconductors. It is possible to control the impedance of the electric circuit that becomes the load of the piezoelectric vibrator 2 after the transmission.
[考案の効果]
この考案は以上説明したとおり、圧電振動子と
並列に超音波パルスの送信後のインピーダンスが
低下する第2半導体を設ける簡単な構造により、
圧電振動子の両端間に設けられた第2半導体
は、第1半導体が導通してコンデンサの充電電荷
の放電による超音波パルスの送信時には高いイン
ピーダンスを呈し、圧電振動子の固有共振周波数
の半周期後には導通して低インピーダンスとなる
ので、
圧電振動子の分極電圧が急速に低下しひずみの
発生も小さくなり、減衰振動が顕著に低下して減
衰時間が短縮でき、圧電振動子に近い位置からの
反射パルスの識別が容易にできるので、塗膜や薄
板の厚さ測定、被検材の表面近傍にある欠陥検出
ならびに空中における近距離の計測が正しく行え
る。[Effects of the invention] As explained above, this invention has a simple structure in which a second semiconductor is provided in parallel with the piezoelectric vibrator, which reduces the impedance after transmitting ultrasonic pulses. The second semiconductor exhibits a high impedance when the first semiconductor conducts and transmits an ultrasonic pulse due to discharge of the charge in the capacitor, and becomes conductive and has a low impedance after half a period of the natural resonance frequency of the piezoelectric vibrator. , the polarization voltage of the piezoelectric vibrator decreases rapidly, the generation of distortion becomes small, the damped vibration decreases significantly, the decay time can be shortened, and the reflected pulse from a position close to the piezoelectric vibrator can be easily identified. It can accurately measure the thickness of paint films and thin plates, detect defects near the surface of test materials, and measure short distances in the air.
また第2半導体は送信時および受信時の必要な
タイミング時に高いインピーダンスを呈するの
で、損失が小さくなり効率の良い送受信を行うこ
とができるという効果がある。 Further, since the second semiconductor exhibits high impedance at necessary timings during transmission and reception, there is an effect that loss is reduced and efficient transmission and reception can be performed.
第1図はこの考案の一実施例を示す回路図、第
2図はこの考案の他の実施例を示す回路図、第3
図は圧電振動子の動作波形、第4図は従来のパル
ス発生回路の回路図、第5図は従来の圧電振動子
の動作波形である。
図において、1は第1半導体、2は圧電振動
子、3はダイオード、4は第2半導体、5はコン
デンサ、6は同軸ケーブル、7は入力端子、8は
受信回路、C1,C2はコンデンサ、R1,R2,R3は
抵抗器である。なお、各図中同一符号は同一また
は相当部分を示す。
Figure 1 is a circuit diagram showing one embodiment of this invention, Figure 2 is a circuit diagram showing another embodiment of this invention, and Figure 3 is a circuit diagram showing another embodiment of this invention.
The figure shows operating waveforms of a piezoelectric vibrator, FIG. 4 is a circuit diagram of a conventional pulse generation circuit, and FIG. 5 shows operating waveforms of a conventional piezoelectric vibrator. In the figure, 1 is a first semiconductor, 2 is a piezoelectric vibrator, 3 is a diode, 4 is a second semiconductor, 5 is a capacitor, 6 is a coaxial cable, 7 is an input terminal, 8 is a receiving circuit, C 1 and C 2 are The capacitors R 1 , R 2 and R 3 are resistors. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
が放電しダイオードを介して励振される圧電振動
子から超音波パルスを送信するパルス発生回路に
おいて、 該圧電振動子と並列にコレクタとエミツタが接
続されコレクタとベース間に抵抗器がまたべース
とエミツタ間に上記コンデンサの放電電流を導電
する極性に該ダイオードを設けて、上記コンデン
サの放電から上記圧電振動子の固有共振周波数の
半周期後に導通する第2半導体を備えたことを特
徴とするパルス発生回路。[Claims for Utility Model Registration] In a pulse generation circuit that transmits ultrasonic pulses from a piezoelectric vibrator that is excited via a diode by discharging the charge in a capacitor due to conduction of a first semiconductor, in parallel with the piezoelectric vibrator. The collector and emitter are connected, a resistor is connected between the collector and the base, and the diode is provided between the base and the emitter with a polarity that conducts the discharge current of the capacitor, so that the discharge of the capacitor causes the natural resonance of the piezoelectric vibrator. A pulse generation circuit comprising a second semiconductor that becomes conductive after a half cycle of the frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873388U JPH0449593Y2 (en) | 1988-01-26 | 1988-01-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873388U JPH0449593Y2 (en) | 1988-01-26 | 1988-01-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01117784U JPH01117784U (en) | 1989-08-09 |
| JPH0449593Y2 true JPH0449593Y2 (en) | 1992-11-20 |
Family
ID=31214868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP873388U Expired JPH0449593Y2 (en) | 1988-01-26 | 1988-01-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0449593Y2 (en) |
-
1988
- 1988-01-26 JP JP873388U patent/JPH0449593Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01117784U (en) | 1989-08-09 |
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