JPH0449669B2 - - Google Patents

Info

Publication number
JPH0449669B2
JPH0449669B2 JP57084188A JP8418882A JPH0449669B2 JP H0449669 B2 JPH0449669 B2 JP H0449669B2 JP 57084188 A JP57084188 A JP 57084188A JP 8418882 A JP8418882 A JP 8418882A JP H0449669 B2 JPH0449669 B2 JP H0449669B2
Authority
JP
Japan
Prior art keywords
sample
backscattered
backscattered electron
plate
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57084188A
Other languages
Japanese (ja)
Other versions
JPS58200184A (en
Inventor
Nobuyoshi Hashimoto
Masahiro Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57084188A priority Critical patent/JPS58200184A/en
Publication of JPS58200184A publication Critical patent/JPS58200184A/en
Publication of JPH0449669B2 publication Critical patent/JPH0449669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、透過型電子顕微鏡、特に反射電子検
出器を有する透過型電子顕微鏡に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a transmission electron microscope, and particularly to a transmission electron microscope having a backscattered electron detector.

〔従来の技術〕[Conventional technology]

透過型電子顕微鏡では、試料を照射した電子線
の一部は試料を透過し、一部は反射電子となつて
散乱する。この試料で反射散乱した反射電子は試
料のすぐ上で電子線通路の周囲に設置された反射
電子検出器で検出している。従来の反射電子検出
器の検出部は、反射電子の吸収効率の良好な半導
体素子を用いて構成されていた。また、試料の反
射電子像を得るモードでは試料電流は10-10A以
下に減少させているが、試料の透過型電子像を得
るモードのときは、試料電子を10-7〜10-8Aに増
加させている。
In a transmission electron microscope, part of the electron beam that irradiates the sample passes through the sample, and part of it becomes reflected electrons and is scattered. The backscattered electrons reflected and scattered by this sample are detected by a backscattered electron detector installed around the electron beam path just above the sample. The detection section of a conventional backscattered electron detector is constructed using a semiconductor element with good absorption efficiency of backscattered electrons. In addition, in the mode for obtaining a backscattered electron image of the sample, the sample current is reduced to 10 -10 A or less, but in the mode for obtaining a transmission electron image of the sample, the sample electron current is reduced to 10 -7 to 10 -8 A. is increasing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、上述の反射電子検出器は、透過電子像
を得るモードで多量の電子線が厚膜試料等で反射
させられた場合は、この多量の反射電子で半導体
素子が破壊される。そのため、これを避けるため
に反射電子像検出モード以外では反射電子検出器
を電子線通路から外す必要があつた。また、半導
体素子を用いた反射電子検出器は構造が複雑で高
価である。即ち、従来の反射電子検出器は測定モ
ードによつて移動させる機構が必要であり、か
つ、高価であるという欠点をもつていた。
However, in the above-mentioned backscattered electron detector, when a large amount of electron beam is reflected by a thick film sample or the like in a mode for obtaining a transmission electron image, the semiconductor element is destroyed by this large amount of backscattered electrons. Therefore, in order to avoid this, it is necessary to remove the backscattered electron detector from the electron beam path in modes other than the backscattered electron image detection mode. Further, a backscattered electron detector using a semiconductor element has a complicated structure and is expensive. That is, the conventional backscattered electron detector requires a mechanism for moving it depending on the measurement mode, and has the drawbacks of being expensive.

本発明は従来技術の欠点を解消し、構造が簡単
で、取り扱いが容易で、安価になると共に、長期
間高性能に作動する反射電子検出器を有する透過
型電子顕微鏡を提供することを目的とするもので
ある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a transmission electron microscope having a backscattered electron detector that overcomes the drawbacks of the prior art, has a simple structure, is easy to handle, is inexpensive, and operates with high performance over a long period of time. It is something to do.

〔課題を解決するための手段〕[Means to solve the problem]

上述の課題を解決するためにとられた本発明の
構成は、一対の対物レンズのポールピースと、一
対の該ポールピース間に挿入される絞り板及び試
料支持台と、前記絞り板と前記試料支持台との間
に位置し、前記試料支持台上の試料より反射した
反射電子を検出する反射電子検出手段とが設けて
ある透過型電子顕微鏡において、前記反射電子検
出手段が軽元素材よりなり、かつ前記絞り板及び
該反射電子検出手段が、前記一対のポールピース
を連結する非磁性体よりなるセパレータに一体に
取り付けられていることを特徴とするものであ
る。
The configuration of the present invention adopted to solve the above-mentioned problems includes a pair of objective lens pole pieces, a diaphragm plate and a sample support stage inserted between the pair of pole pieces, and a diaphragm plate and the sample holder. A transmission electron microscope is provided with a backscattered electron detection means located between the support stand and which detects backscattered electrons reflected from the sample on the sample support stand, wherein the backscattered electron detection means is made of a light material. , and the aperture plate and the reflected electron detection means are integrally attached to a separator made of a non-magnetic material that connects the pair of pole pieces.

〔作用〕[Effect]

本発明では、例えば反射電子検出板が、例えば
アルミニウムのような軽元素材よりなつているの
で、透過試料像の観察モードに切換える場合に
も、観察装置のモード切換スイツチを切換えて反
射電子検出器を休止させ、透過電子顕微鏡本体の
筒体の最下部に設置してある蛍光板に透過試料像
を作ることができる。すなわち透過試料像の観察
モードに切換える場合に反射電子検出板を電子線
通路から外す必要はない。
In the present invention, for example, the backscattered electron detection plate is made of a light material such as aluminum, so even when switching to the observation mode of a transmitted sample image, the backscattered electron detector can be set by switching the mode changeover switch of the observation device. When the transmission electron microscope is stopped, an image of the transmitted sample can be created on the fluorescent screen installed at the bottom of the cylinder of the transmission electron microscope body. That is, when switching to the transmission sample image observation mode, there is no need to remove the backscattered electron detection plate from the electron beam path.

さらに、本発明においては、反射電子検出板が
絞り板と共に、一対のポールピースを連結する非
磁性体よりなるセパレータに一体に取り付けられ
ているので、反射電子検出板は対物レンズの取り
付けと同時に設置することができ、反射電子検出
板の取り付けのためにOリングや筒体などは必要
とせず取り扱いは容易であり、構造が簡単で安価
になると共に、長期間高性能に作動可能である。
Furthermore, in the present invention, the backscattered electron detection plate and the aperture plate are integrally attached to the separator made of non-magnetic material that connects the pair of pole pieces, so the backscattered electron detection plate is installed at the same time as the objective lens is attached. Since no O-ring or cylindrical body is required for attaching the backscattered electron detection plate, handling is easy, the structure is simple and inexpensive, and it can operate at high performance for a long period of time.

〔実施例〕〔Example〕

第1図は本発明の透過型電子顕微鏡の一実施例
の要部の説明図で、試料室付近を断面して示して
おり、第2図は第1図で図示を省略してある試料
支持台と試料との関係を示す説明図である。この
図で、1は透過型電子顕微鏡の側壁、2及び3は
それぞれ、上部及び下部の対物レンズのポールピ
ース、4は、上部及び下部の対物レンズのポール
ピース2,3を連結する絶縁体よりなるセパレー
タ、7は絞り板、8はアルミニウムからなる反射
電子検出板を示しており、絞り板7、反射電子検
出板8は絶縁体5を介してセパレータ4にねじ6
で固定されている。絞り板7と反射電子検出板8
の各先端部には照射電子線9を通過させる小孔が
設けられている。
FIG. 1 is an explanatory view of the main parts of an embodiment of the transmission electron microscope of the present invention, showing a section near the sample chamber, and FIG. 2 is a sample support which is omitted in FIG. 1. FIG. 3 is an explanatory diagram showing the relationship between the stand and the sample. In this figure, 1 is the side wall of the transmission electron microscope, 2 and 3 are the pole pieces of the upper and lower objective lenses, respectively, and 4 is the insulator that connects the pole pieces 2 and 3 of the upper and lower objective lenses. 7 is a diaphragm plate, and 8 is a backscattered electron detection plate made of aluminum.
is fixed. Aperture plate 7 and backscattered electron detection plate 8
A small hole through which the irradiation electron beam 9 passes is provided at each tip.

照射電子線9は絞り板7の上にある上部の対物
レンズのポールピース2の孔を通つた後、絞り板
7の孔と反射電子検出板8の孔を通り、試料支持
台10に支持されている試料11を照射し乍ら走
査移動する。試料11よりは反射電子12が発生
して反射電子検出板8で検知され、試料11を透
過して直進した透過電子線13を下部の対物レン
ズのポールピース3の孔を通過し、蛍光板上に試
料像を作る。
The irradiated electron beam 9 passes through the hole in the pole piece 2 of the upper objective lens on the diaphragm plate 7, passes through the hole in the diaphragm plate 7 and the hole in the backscattered electron detection plate 8, and is supported on the sample support stand 10. While irradiating the sample 11 that is currently in use, the sample 11 is scanned and moved. Backscattered electrons 12 are generated from the sample 11 and detected by the backscattered electron detection plate 8, and the transmitted electron beam 13 that has passed through the sample 11 and gone straight is passed through the hole in the pole piece 3 of the objective lens at the bottom and onto the fluorescent screen. Create a sample image.

反射電子検出板8で検知した試料表面よりの反
射電子信号は端子板14、リード線15a、ハー
メチツクシール16、リード線15bを介して接
続端子18に伝達される。この接続端子18に入
つた信号は増幅器19で増幅されて観察装置20
に送られ、観察装置20に表示している。なお、
17はハーメチツクシール16の周囲を気密にし
ているOリングであり、このハーメチツクシール
16はねじ22で側壁1に固定されている承金2
1で押えられている。また、観察装置20のスイ
ツチを切換えると、試料11を透過した透過電子
線13による試料像を蛍光板上に生じるように構
成されている。
A backscattered electron signal from the sample surface detected by the backscattered electron detection plate 8 is transmitted to the connection terminal 18 via the terminal plate 14, lead wire 15a, hermetic seal 16, and lead wire 15b. The signal that enters this connection terminal 18 is amplified by an amplifier 19 and then sent to the observation device 20.
and displayed on the observation device 20. In addition,
Reference numeral 17 denotes an O-ring that makes the periphery of the hermetic seal 16 airtight.
It is held down by 1. Further, when the switch of the observation device 20 is switched, a sample image is generated on the fluorescent screen by the transmitted electron beam 13 that has passed through the sample 11.

反射電子検出板8はアルミニウムのような軽元
素金属よりなる板であるので、細く絞つた照射電
子線9で試料11を走査したときに生じた反射電
子像は反射電子検出板8で検知され観察装置20
に増幅表示される。また、透過試料像の観察モー
ドに切換えるには観察装置20のモード切換スイ
ツチを切換えて反射電子検出器を休止させ、電子
顕微鏡本体の筒体の最下部に設置してある蛍光板
に透過試料像を作る。このときは反射電子検出板
8に多量の反射電子が衝突するが、反射電子検出
器の電気系は遮断されて作動しないので、これら
を破損することはない。
Since the backscattered electron detection plate 8 is a plate made of a light element metal such as aluminum, the backscattered electron image generated when the sample 11 is scanned with the narrowly focused irradiation electron beam 9 is detected by the backscattered electron detection plate 8 and observed. device 20
is amplified and displayed. To switch to the transmission sample image observation mode, turn the mode changeover switch on the observation device 20 to stop the backscattered electron detector, and display the transmission sample image on the fluorescent screen installed at the bottom of the cylinder of the electron microscope body. make. At this time, a large amount of backscattered electrons collide with the backscattered electron detection plate 8, but since the electrical system of the backscattered electron detector is cut off and does not operate, it will not be damaged.

従来の半導体検出素子を用いて反射電子検出器
ではモード切換時に半導体検出素子を電子線通路
から外す必要があつたが、本実施例ではモード変
化に何等関係なく反射電子検出板8は固定したま
までよい。したがつて、検出部材の移動機構は不
要となつて大幅に製造原価を低減させることがで
きる。また、モード切換時の検出部材の移動操作
がないので操作は簡略化され、反射電子検出板8
は1枚の例えばアルミ板であるので半永久的に使
用できる。その結果、従来の反射電子検出器に比
較して約1/100の価格で提供できるという利点が
得られる。
In conventional backscattered electron detectors using semiconductor detection elements, it was necessary to remove the semiconductor detection element from the electron beam path when switching modes, but in this embodiment, the backscattered electron detection plate 8 remains fixed regardless of the mode change. That's fine. Therefore, a mechanism for moving the detection member is not required, and manufacturing costs can be significantly reduced. In addition, since there is no need to move the detection member when switching modes, the operation is simplified, and the backscattered electron detection plate 8
Since it is made of a single aluminum plate, it can be used semi-permanently. As a result, it has the advantage of being available at about 1/100th the price of conventional backscattered electron detectors.

また、この反射電子検出板8は、絞り板7と共
に一対の対物レンズのポールピース2,3を連結
するセパレータ4に1体に取り付けられているの
で、対物レンズの取り付けと同時に反射電子検出
板8も設置できるので、反射電子検出板8の取り
付のためにOリングや筒体などは必要とせず、構
造は簡単で、取り付けは容易である。
In addition, the backscattered electron detection plate 8 is attached to the separator 4 that connects the pole pieces 2 and 3 of the pair of objective lenses together with the aperture plate 7, so that the backscattered electron detection plate 8 is attached at the same time as the objective lens is attached. Since the backscattered electron detection plate 8 can also be installed, no O-ring or cylindrical body is required for mounting the backscattered electron detection plate 8, and the structure is simple and installation is easy.

上記実施例の反射電子検出板8はアルミニウム
板を用いているが、アルミニウムの代りにベリリ
ウム、カーボン等の軽元素材も板状に加工して使
用することができる。
Although the backscattered electron detection plate 8 of the above embodiment uses an aluminum plate, a light material such as beryllium or carbon may be used instead of aluminum by processing it into a plate shape.

〔発明の効果〕 本発明の透過型電子顕微鏡は、構造が簡単で、
取り扱いが容易で、安価かつ長寿命になると共
に、長期間高性能に作動する反射電子検出器を有
する透過型電子顕微鏡を提供可能とするものであ
る。
[Effects of the Invention] The transmission electron microscope of the present invention has a simple structure,
It is possible to provide a transmission electron microscope that is easy to handle, inexpensive, has a long life, and has a backscattered electron detector that operates with high performance over a long period of time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の透過型電子顕微鏡の一実施例
の要部の説明図、第2図は第1図の要部の説明図
である。 1……側壁、2,3……対物レンズのポールピ
ース、4……セパレータ、5……絶縁体、6,2
2……取付けねじ、7……絞り板、8……反射電
子検出板、9……照射電子線、10……試料支持
台、11……試料、12……反射電子、13……
透過電子線、14……端子板、15……リード
線、16……ハーメチツクシール、18……接続
端子、19……増幅器、20……観察装置、21
……承金。
FIG. 1 is an explanatory diagram of the main part of an embodiment of a transmission electron microscope of the present invention, and FIG. 2 is an explanatory diagram of the main part of FIG. 1. 1...Side wall, 2, 3...Pole piece of objective lens, 4...Separator, 5...Insulator, 6,2
2...Mounting screw, 7...Aperture plate, 8...Backscattered electron detection plate, 9...Irradiation electron beam, 10...Sample support stand, 11...Sample, 12...Backscattered electron, 13...
Transmission electron beam, 14...Terminal board, 15...Lead wire, 16...Hermetic seal, 18...Connection terminal, 19...Amplifier, 20...Observation device, 21
……Shonkin.

Claims (1)

【特許請求の範囲】 1 一対の対物レンズのポールピースと、一対の
該ポールピース間に挿入される絞り板及び試料支
持台と、前記絞り板と前記試料支持台との間に位
置し、前記試料支持台上の試料より反射した反射
電子を検出する反射電子検出手段とが設けてある
透過型電子顕微鏡において、前記反射電子検出手
段が軽元素材よりなり、かつ前記絞り板及び該反
射電子検出手段が前記一対のポールピースを連結
する非磁性体よりなるセパレータに一体に取り付
けられていることを特徴とする透過型電子顕微
鏡。 2 上記軽元素材が、アルミニウム、ベリリウム
および炭素のいずれかである特許請求の範囲第1
項記載の透過型電子顕微鏡。
[Scope of Claims] 1 A pair of objective lens pole pieces, an aperture plate and a sample support stand inserted between the pair of pole pieces, and a sample support stand located between the aperture plate and the sample support stand, A transmission electron microscope is provided with a backscattered electron detection means for detecting backscattered electrons reflected from a sample on a sample support stand, wherein the backscattered electron detection means is made of a light material, and the diaphragm plate and the backscattered electron detection means are made of a light material. A transmission electron microscope characterized in that the means is integrally attached to a separator made of a non-magnetic material that connects the pair of pole pieces. 2. Claim 1, wherein the light source material is any one of aluminum, beryllium, and carbon.
Transmission electron microscope described in section.
JP57084188A 1982-05-18 1982-05-18 transmission electron microscope Granted JPS58200184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57084188A JPS58200184A (en) 1982-05-18 1982-05-18 transmission electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57084188A JPS58200184A (en) 1982-05-18 1982-05-18 transmission electron microscope

Publications (2)

Publication Number Publication Date
JPS58200184A JPS58200184A (en) 1983-11-21
JPH0449669B2 true JPH0449669B2 (en) 1992-08-12

Family

ID=13823496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084188A Granted JPS58200184A (en) 1982-05-18 1982-05-18 transmission electron microscope

Country Status (1)

Country Link
JP (1) JPS58200184A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107976458A (en) * 2017-10-10 2018-05-01 中国科学院自动化研究所 low energy back scattering electronic detector
US11443916B2 (en) * 2020-04-15 2022-09-13 Kla Corporation Thin pellicle material for protection of solid-state electron detectors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5049819U (en) * 1973-09-04 1975-05-15
JPS5614845Y2 (en) * 1976-12-16 1981-04-08

Also Published As

Publication number Publication date
JPS58200184A (en) 1983-11-21

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