JPH04507266A - 高速度で光学的酸化物被膜を堆積する方法 - Google Patents

高速度で光学的酸化物被膜を堆積する方法

Info

Publication number: JPH04507266A
Authority: JP; Japan
Prior art keywords: target; gas; oxide; oxygen; reactant
Prior art date: 1989-08-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2511876A

Other languages

English (en)

Japanese (ja)

Inventor

ナーデル　スティーヴン　ジェイ

ファン　スキーク　タムゼン　エル

ウォルフ　ジェシー　ディー

ワムボルド　レナード　ジー

Original Assignee

ザ　ビーオーシー　グループ　インコーポレイテッド

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-08-07

Filing date

1990-08-06

Publication date

1992-12-17

1990-08-06 Application filed by ザ　ビーオーシー　グループ　インコーポレイテッド filed Critical ザ　ビーオーシー　グループ　インコーポレイテッド

1992-12-17 Publication of JPH04507266A publication Critical patent/JPH04507266A/ja

Status Pending legal-status Critical Current

Links

238000000151 deposition Methods 0.000 title claims description 72
238000000034 method Methods 0.000 title claims description 72
230000003287 optical effect Effects 0.000 title claims description 25
239000007789 gas Substances 0.000 claims description 74
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 73
230000008021 deposition Effects 0.000 claims description 68
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 54
239000001301 oxygen Substances 0.000 claims description 53
229910052760 oxygen Inorganic materials 0.000 claims description 53
238000010521 absorption reaction Methods 0.000 claims description 48
239000001272 nitrous oxide Substances 0.000 claims description 34
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 29
239000000376 reactant Substances 0.000 claims description 27
239000000758 substrate Substances 0.000 claims description 27
238000004544 sputter deposition Methods 0.000 claims description 26
239000010936 titanium Substances 0.000 claims description 25
229910052757 nitrogen Inorganic materials 0.000 claims description 21
239000000203 mixture Substances 0.000 claims description 20
229910001882 dioxygen Inorganic materials 0.000 claims description 18
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
229910052719 titanium Inorganic materials 0.000 claims description 16
239000011135 tin Substances 0.000 claims description 13
229910001873 dinitrogen Inorganic materials 0.000 claims description 11
229910052782 aluminium Inorganic materials 0.000 claims description 10
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
238000005546 reactive sputtering Methods 0.000 claims description 9
229910052718 tin Inorganic materials 0.000 claims description 9
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
229910052725 zinc Inorganic materials 0.000 claims description 7
239000011701 zinc Substances 0.000 claims description 7
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
229910045601 alloy Inorganic materials 0.000 claims description 6
239000000956 alloy Substances 0.000 claims description 6
MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
229910052710 silicon Inorganic materials 0.000 claims description 6
239000010703 silicon Substances 0.000 claims description 6
229910052715 tantalum Inorganic materials 0.000 claims description 6
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
230000015572 biosynthetic process Effects 0.000 claims description 4
150000001875 compounds Chemical class 0.000 claims description 4
230000004907 flux Effects 0.000 claims description 4
239000011261 inert gas Substances 0.000 claims description 4
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
229910052721 tungsten Inorganic materials 0.000 claims description 4
229910052726 zirconium Inorganic materials 0.000 claims description 4
239000002253 acid Substances 0.000 claims description 3
229910052797 bismuth Inorganic materials 0.000 claims description 3
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
229910052738 indium Inorganic materials 0.000 claims description 3
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
230000009257 reactivity Effects 0.000 claims description 3
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
229910001887 tin oxide Inorganic materials 0.000 claims description 3
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
239000010937 tungsten Substances 0.000 claims description 3
239000011787 zinc oxide Substances 0.000 claims description 3
-1 di Ruconium Chemical compound 0.000 claims description 2
229910001128 Sn alloy Inorganic materials 0.000 claims 2
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 2
238000002835 absorbance Methods 0.000 claims 1
125000004429 atom Chemical group 0.000 claims 1
125000004430 oxygen atom Chemical group O* 0.000 claims 1
239000010408 film Substances 0.000 description 72
238000000576 coating method Methods 0.000 description 18
239000011248 coating agent Substances 0.000 description 16
229910052751 metal Inorganic materials 0.000 description 13
239000002184 metal Substances 0.000 description 13
238000002474 experimental method Methods 0.000 description 10
239000000463 material Substances 0.000 description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
238000000295 emission spectrum Methods 0.000 description 6
229920006384 Airco Polymers 0.000 description 5
230000008569 process Effects 0.000 description 4
239000013077 target material Substances 0.000 description 4
238000002834 transmittance Methods 0.000 description 4
229910052786 argon Inorganic materials 0.000 description 3
239000012159 carrier gas Substances 0.000 description 3
230000008859 change Effects 0.000 description 3
238000004020 luminiscence type Methods 0.000 description 3
229910052752 metalloid Inorganic materials 0.000 description 3
150000002738 metalloids Chemical class 0.000 description 3
150000002739 metals Chemical class 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
238000004458 analytical method Methods 0.000 description 2
230000005540 biological transmission Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000005259 measurement Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000005022 packaging material Substances 0.000 description 2
239000012495 reaction gas Substances 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
230000003595 spectral effect Effects 0.000 description 2
239000000126 substance Substances 0.000 description 2
239000010409 thin film Substances 0.000 description 2
240000007594 Oryza sativa Species 0.000 description 1
235000007164 Oryza sativa Nutrition 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
239000006117 anti-reflective coating Substances 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
235000013399 edible fruits Nutrition 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
239000005357 flat glass Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
230000003116 impacting effect Effects 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
229910017464 nitrogen compound Inorganic materials 0.000 description 1
150000002830 nitrogen compounds Chemical class 0.000 description 1
QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
238000005457 optimization Methods 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
150000002927 oxygen compounds Chemical class 0.000 description 1
238000004886 process control Methods 0.000 description 1
239000002994 raw material Substances 0.000 description 1
238000002310 reflectometry Methods 0.000 description 1
235000009566 rice Nutrition 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000012360 testing method Methods 0.000 description 1
ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
230000007704 transition Effects 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Surface Treatment Of Glass (AREA)
Surface Treatment Of Optical Elements (AREA)

JP2511876A 1989-08-07 1990-08-06 高速度で光学的酸化物被膜を堆積する方法 Pending JPH04507266A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US39058989A	1989-08-07	1989-08-07
US390,589		1989-08-07

Publications (1)

Publication Number	Publication Date
JPH04507266A true JPH04507266A (ja)	1992-12-17

Family

ID=23543084

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2511876A Pending JPH04507266A (ja)	1989-08-07	1990-08-06	高速度で光学的酸化物被膜を堆積する方法

Country Status (6)

Country	Link
EP (1)	EP0594568A1 (de)
JP (1)	JPH04507266A (de)
KR (1)	KR920703870A (de)
AU (2)	AU6181990A (de)
CA (1)	CA2059525A1 (de)
WO (1)	WO1991002103A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2013241677A (ja) *	2012-05-04	2013-12-05	Jds Uniphase Corp	誘電体膜の反応性スパッタ堆積
JP2018076559A (ja) *	2016-11-09	2018-05-17	キヤノン株式会社	スパッタリング装置及び膜の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
ES2061399B1 (es) *	1993-03-31	1995-06-16	Consejo Superior Investigacion	Procedimiento para la obtencion de capas finas de oxidos mediante bombardeo ionico y el uso de precursores metalicos volatiles
EP0639655B1 (de) *	1993-07-28	2000-09-27	Asahi Glass Company Ltd.	Verfahren und Vorrichtung zur Kathodenzerstäubung
WO2001010552A1 (fr)	1999-08-05	2001-02-15	Kabushiki Kaisha Toyota Chuo Kenkyusho	Materiau photocatalytique, article photocatalytique et procede de preparation de ceux-ci
KR100794755B1 (ko) *	2006-07-03	2008-01-15	전남대학교산학협력단	Ⅲ족 원소와 질소(앤)의 코도핑을 이용한 피형 산화아연박막의 제조방법
DE102014104672A1 (de) *	2014-04-02	2015-10-08	Kennametal Inc.	Beschichtetes Schneidwerkzeug und Verfahren zu seiner Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3962062A (en) *	1974-12-09	1976-06-08	Northern Electric Company Limited	Sputtered dielectric thin films
EP0035906B2 (de) *	1980-03-10	1989-11-08	Teijin Limited	Mehrschichtige Struktur mit selektiver Lichtdurchlässigkeit
JPS5940227B2 (ja) *	1980-06-24	1984-09-28	富士通株式会社	リアクティブスパッタリング方法
JPS57161063A (en) *	1981-03-31	1982-10-04	Nippon Sheet Glass Co Ltd	Method and device for sticking metallic oxide film on substrate
NO157212C (no) *	1982-09-21	1988-02-10	Pilkington Brothers Plc	Fremgangsmaate for fremstilling av belegg med lav emisjonsevne.
US4428811A (en) *	1983-04-04	1984-01-31	Borg-Warner Corporation	Rapid rate reactive sputtering of a group IVb metal
US4769291A (en) *	1987-02-02	1988-09-06	The Boc Group, Inc.	Transparent coatings by reactive sputtering
US4849081A (en) *	1988-06-22	1989-07-18	The Boc Group, Inc.	Formation of oxide films by reactive sputtering

1990
- 1990-08-06 EP EP90912513A patent/EP0594568A1/de not_active Withdrawn
- 1990-08-06 WO PCT/US1990/004382 patent/WO1991002103A1/en not_active Ceased
- 1990-08-06 JP JP2511876A patent/JPH04507266A/ja active Pending
- 1990-08-06 KR KR1019920700259A patent/KR920703870A/ko not_active Withdrawn
- 1990-08-06 AU AU61819/90A patent/AU6181990A/en not_active Abandoned
- 1990-08-06 CA CA002059525A patent/CA2059525A1/en not_active Abandoned
1994
- 1994-05-05 AU AU61913/94A patent/AU6191394A/en not_active Abandoned

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2013241677A (ja) *	2012-05-04	2013-12-05	Jds Uniphase Corp	誘電体膜の反応性スパッタ堆積
US10920310B2 (en)	2012-05-04	2021-02-16	Viavi Solutions Inc.	Reactive sputter deposition of dielectric films
US11584982B2 (en)	2012-05-04	2023-02-21	Viavi Solutions Inc.	Reactive sputter deposition of dielectric films
US12545987B2 (en)	2012-05-04	2026-02-10	Viavi Solutions Inc.	Reactive sputter deposition of dielectric films
JP2018076559A (ja) *	2016-11-09	2018-05-17	キヤノン株式会社	スパッタリング装置及び膜の製造方法

Also Published As

Publication number	Publication date
EP0594568A1 (de)	1994-05-04
EP0594568A4 (de)	1993-09-02
CA2059525A1 (en)	1991-02-08
WO1991002103A1 (en)	1991-02-21
AU6181990A (en)	1991-03-11
KR920703870A (ko)	1992-12-18
AU6191394A (en)	1994-07-07

Publication	Publication Date	Title
US5473468A (en)	1995-12-05	Coated transparent substrate
Suhail et al.	1992	dc reactive magnetron sputtering of titanium‐structural and optical characterization of TiO2 films
US4861669A (en)	1989-08-29	Sputtered titanium oxynitride films
US4166784A (en)	1979-09-04	Feedback control for vacuum deposition apparatus
CA1335887C (en)	1995-06-13	Neutral sputtered films of metal alloy oxides
EP3467553A1 (de)	2019-04-10	Optischer filter und sensorsystem
US4594137A (en)	1986-06-10	Stainless steel overcoat for sputtered films
US9945983B2 (en)	2018-04-17	Silicon titanium oxide coating, coated article including silicon titanium oxide coating, and method of making the same
JP2000503070A (ja)	2000-03-14	二酸化チタンによる基材の被覆方法
EP0350362A1 (de)	1990-01-10	Verfahren zur Herstellung einer transparenten Schicht mit einem niedrigen Widerstand
US5417827A (en)	1995-05-23	Cathode targets of silicon and transition metal
EP0283923B1 (de)	1990-07-25	Aufgestäubte Titanoxynitrid-Filme
Maruyama et al.	1995	Tin nitride thin films prepared by radio‐frequency reactive sputtering
Ohsaki et al.	2001	High rate deposition of TiO2 by DC sputtering of the TiO2− X target
Sundaram et al.	1997	Deposition and X-ray photoelectron spectroscopy studies on sputtered cerium dioxide thin films
JPH04507266A (ja)	1992-12-17	高速度で光学的酸化物被膜を堆積する方法
WO2001048261A9 (en)	2001-11-08	Hydrogenating a layer of an antireflection coating
JP2002371355A (ja)	2002-12-26	透明薄膜の製造方法
Chiba et al.	2008	Formation process of Al2O3 thin film by reactive sputtering
Spencer et al.	1988	Design and use of a vacuum system for high rate reactive sputtering of TiO2/TiN/TiO2 solar control films
US5633195A (en)	1997-05-27	Laser planarization of zone 1 deposited metal films for submicron metal interconnects
KR20180091832A (ko)	2018-08-16	착색된 글레이징을 얻기 위한 방법 및 플랜트
Schiller et al.	1982	Properties of cadmium stannate thin films produced by reactive high rate dc magnetron-plasmatron sputtering
CA2357933C (en)	2008-09-30	Laminate structure and production method therefor
US20020125130A1 (en)	2002-09-12	Cathode targets of silicon and transition metal