JPH0451991B2 - - Google Patents

Info

Publication number
JPH0451991B2
JPH0451991B2 JP57076857A JP7685782A JPH0451991B2 JP H0451991 B2 JPH0451991 B2 JP H0451991B2 JP 57076857 A JP57076857 A JP 57076857A JP 7685782 A JP7685782 A JP 7685782A JP H0451991 B2 JPH0451991 B2 JP H0451991B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
electrode
insulating frame
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57076857A
Other languages
Japanese (ja)
Other versions
JPS58194382A (en
Inventor
Juji Kawasaki
Takeshi Haneda
Tsugio Kawamichi
Hitoshi Haga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57076857A priority Critical patent/JPS58194382A/en
Publication of JPS58194382A publication Critical patent/JPS58194382A/en
Publication of JPH0451991B2 publication Critical patent/JPH0451991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)

Description

【発明の詳細な説明】 本発明は発光装置の組立を簡単に行なうことの
できる構造を具備した発光装置用電極構体に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode assembly for a light emitting device having a structure that allows easy assembly of the light emitting device.

従来の発光装置で、発光半導体(以下、発光素
子チツプという)を載置する電極構体は、第1図
で示すように、第1のタイバー1、第2のタイバ
ー2で一対の電極体3および4の発光素子チツプ
取付部、いわゆる、ボンデイングパツド部5を支
えているが、その支えが充分ではなく特に、ボン
デイングパツド部5に機械的外部応力が加わつた
場合、容易に塑性変形を生じ、実用に耐えないと
いう問題点があつた。
In a conventional light emitting device, an electrode assembly on which a light emitting semiconductor (hereinafter referred to as a light emitting element chip) is placed has a first tie bar 1, a second tie bar 2, a pair of electrode bodies 3, and a second tie bar 2, as shown in FIG. 4 supports the light emitting element chip mounting portion, the so-called bonding pad portion 5, but the support is insufficient and, in particular, when external mechanical stress is applied to the bonding pad portion 5, plastic deformation easily occurs. However, there was a problem that it was not practical.

また従来の発光装置で、電極体3,4が第1図
に示しているように相対向する形状でなく、平行
に並べその先端にLEDチツプをボンデイングし
て樹脂封止をする縦型フレームのものがある。こ
の場合電極体先端は、開放されているので、ダイ
スボンデイング及びワイヤボンデイング時に、電
極体の先端がふらつきやすく発光装置を作成する
作業の安定性に欠けるという不都合もあつた。
In addition, in conventional light emitting devices, the electrode bodies 3 and 4 are not shaped to face each other as shown in Figure 1, but are arranged in parallel and have a vertical frame with an LED chip bonded to the tip and sealed with resin. There is something. In this case, since the tip of the electrode body is open, there is also the problem that the tip of the electrode body tends to wobble during die bonding and wire bonding, resulting in a lack of stability in the work of producing a light emitting device.

本発明は、これら上述の問題点を解消したもの
で、相対向する少なくとも一対の電極体と、前記
電極体を支持するフレームとを平面的に一体形成
し、かつ、前記電極体の相対向する先端部を、主
面方向を開放した絶縁体枠体で囲い、同先端部の
主面を露出させ、その主面の反対面を前記絶縁体
枠体の底部に密着固定したことを特徴とする発光
装置用電極構体を提供するものである。絶縁枠体
は内面反射側壁を有し、かつ、枠体内部は、透光
性樹脂で充填している。
The present invention solves these above-mentioned problems by integrally forming at least one pair of electrode bodies facing each other and a frame supporting the electrode bodies in a planar manner, and The tip is surrounded by an insulator frame whose main surface is open, the main surface of the tip is exposed, and the opposite surface of the main surface is tightly fixed to the bottom of the insulator frame. An electrode structure for a light emitting device is provided. The insulating frame has internal reflective side walls, and the inside of the frame is filled with a translucent resin.

次に、本発明の発光装置用電極構体について図
面を参照しつつ実施例により詳しく説明する。
Next, the electrode structure for a light emitting device of the present invention will be described in detail by way of examples with reference to the drawings.

発明の実施例に係る発光装置用電極構体は、第
2図にその斜視図、第3図にそのA−A′断面図
を示すように、上方に開口した凹部の絶縁枠体6
を、たとえば、成形樹脂材料、セラミツク材料、
ガラス無機質材料といつた電気的絶縁材料で形成
し、この絶縁枠体6で、電極体3および4のボン
デイングパツド部5をその主面が露出するように
して、この部分を囲んで固定化せしめる構造とな
つている。すなわち、本実施例の発光装置用電極
構体では、従来のリードフレームにみられた、ボ
ンデイングパツド部5に対する外部応力が加わつ
た場合に生ずる塑性変形の不良発生の問題もな
く、取り扱い時にボンデイングパツド部5に外部
応力が加わらないよう細心の注意を払う必要はな
く、その取り扱いが非常に簡単になる。
As shown in FIG. 2 as a perspective view and as shown in FIG.
For example, molded resin materials, ceramic materials,
The insulating frame 6 is made of an electrically insulating material such as glass inorganic material, and is fixed by surrounding the bonding pad portions 5 of the electrode bodies 3 and 4 with their main surfaces exposed. It has a structure that encourages In other words, the electrode assembly for a light emitting device of this embodiment does not have the problem of plastic deformation defects that occur when external stress is applied to the bonding pad portion 5, which was seen in conventional lead frames, and the bonding pad portion 5 does not deform during handling. There is no need to take great care not to apply external stress to the door portion 5, and its handling becomes very easy.

第4図は本発明に係る発光装置用電極構体を発
光ダイオードに用いた断面図を示すもので、第1
図〜第3図と同一番号は同一部分を示す。
FIG. 4 shows a cross-sectional view of a light emitting diode in which the electrode structure for a light emitting device according to the present invention is used.
The same numbers as in FIGS. 3 to 3 indicate the same parts.

同図から明らかな様に、実際の半導体装置の組
立に際しては、ボンデイングパツド部5の電気的
絶縁材料による固定化に伴ない、同部5に導電装
着材7を介して半導体チツプ、たとえば発光素子
チツプ8を載置して、金属細線9により電極接続
する際、機械的安定性と取扱いの作業性が飛躍的
に向上させることができ、また、封止工程におい
ては、絶縁枠体5で囲まれた凹部に、たとえば、
透光性エポキシ樹脂10を注入硬化せしめること
により、封止外囲器の形成ができる。電気的絶縁
枠体6の凹部を封止外囲器の一部として積極的に
利用することにより、封止用成形の工程が簡素化
され、経済的に安価な半導体装置を提供すること
が可能である。
As is clear from the figure, when actually assembling a semiconductor device, as the bonding pad portion 5 is fixed with an electrically insulating material, a semiconductor chip, for example, a light emitting device, is attached to the bonding pad portion 5 via a conductive attachment material 7. When mounting the element chip 8 and connecting the electrodes with the thin metal wires 9, mechanical stability and handling workability can be dramatically improved. In an enclosed recess, e.g.
By injecting and curing the translucent epoxy resin 10, a sealed envelope can be formed. By actively utilizing the recessed portion of the electrically insulating frame 6 as a part of the sealing envelope, the sealing molding process is simplified and it is possible to provide an economically inexpensive semiconductor device. It is.

また特に、半導体発光装置に利用する場合、電
気的絶縁材料部に、遮光性でかつ反射効率の良い
材料を用いることにより、絶縁枠体6の開口上方
部へのみ有効に光を導くことができ、下方、側方
への光の漏れも防止することができる。
In particular, when used in a semiconductor light emitting device, by using a material with light blocking properties and high reflection efficiency for the electrically insulating material part, light can be effectively guided only to the upper part of the opening of the insulating frame 6. It is also possible to prevent light from leaking downward and to the sides.

なお、実施例においては、電気的絶縁枠体とし
て直方体のものを用いたが、安定な形状を有する
ものであれば、これが円柱状あるいは角柱状であ
つてもよい。
In the embodiment, a rectangular parallelepiped is used as the electrically insulating frame, but it may be cylindrical or prismatic as long as it has a stable shape.

以上説明してきたところから明らかなように、
本発明の発光装置用電極構体は、従来のリードフ
レームの塑性変形に伴なう不都合を排除する効果
が奏される。
As is clear from what has been explained above,
The electrode assembly for a light emitting device of the present invention has the effect of eliminating the disadvantages associated with plastic deformation of conventional lead frames.

さらに、縦型フレームの先端にLEDチツプを
ボンデイングして樹脂防止をすることにより形成
される発光ダイオードにおいてダイスボンデイン
グ、ワイヤボンデイング時におこる、リードフレ
ーム先端のふらつきによる作業の安定性の欠如
が、本発明の場合には、絶縁枠体が先端を固定し
ているので安定した作業が可能となる。
Furthermore, the present invention eliminates the lack of work stability due to wobbling of the lead frame tip that occurs during die bonding and wire bonding in light emitting diodes that are formed by bonding an LED chip to the tip of a vertical frame and preventing resin. In this case, stable work is possible because the insulating frame fixes the tip.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のリードフレームの斜視図、第2
図は本発明の実施例に係る発光装置用電極構体の
斜視図、第3図はそのA−A′の断面図、第4図
は本発明に係る発光装置用電極構体を発光ダイオ
ードに用いた場合の断面図である。 1,2……支持体、3,4……電極体、5……
ボンデイングパツド部、6……絶縁枠体、7……
導電接着材、8……半導体チツプ、9……金属細
線、10……封止樹脂。
Figure 1 is a perspective view of a conventional lead frame, Figure 2 is a perspective view of a conventional lead frame.
The figure is a perspective view of an electrode structure for a light emitting device according to an embodiment of the present invention, FIG. 3 is a cross-sectional view taken along line A-A', and FIG. FIG. 1, 2... Support body, 3, 4... Electrode body, 5...
Bonding pad section, 6... Insulating frame, 7...
Conductive adhesive, 8... Semiconductor chip, 9... Fine metal wire, 10... Sealing resin.

Claims (1)

【特許請求の範囲】 1 相対向する少なくとも一対の電極体と、前記
電極体を支持するフレームとを平面的に一体形成
し、かつ、前記電極体の相対向する先端部を、主
面方向を開放した絶縁枠体で囲い、同先端部の主
面を露出させ、その主面の反対面を前記絶縁枠体
の底部に密着固定したことを特徴とする発光装置
用電極構体。 2 絶縁枠体は内面反射側壁を有することを特徴
とする請求項1記載の発光装置用電極構体。 3 絶縁枠体内部を透光性樹脂で充填させたこと
を特徴とする請求項1,2記載の発光装置用電極
構体。
[Scope of Claims] 1. At least one pair of electrode bodies facing each other and a frame supporting the electrode bodies are integrally formed in a planar manner, and the opposing tips of the electrode bodies are arranged so that the opposite ends thereof face each other in the main surface direction. 1. An electrode assembly for a light emitting device, characterized in that the electrode structure is surrounded by an open insulating frame, the main surface of the tip is exposed, and the opposite surface of the main surface is closely fixed to the bottom of the insulating frame. 2. The electrode structure for a light emitting device according to claim 1, wherein the insulating frame has an internally reflecting side wall. 3. The electrode structure for a light emitting device according to claim 1, wherein the inside of the insulating frame is filled with a translucent resin.
JP57076857A 1982-05-08 1982-05-08 Electrode structure for semiconductor device Granted JPS58194382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57076857A JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57076857A JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Publications (2)

Publication Number Publication Date
JPS58194382A JPS58194382A (en) 1983-11-12
JPH0451991B2 true JPH0451991B2 (en) 1992-08-20

Family

ID=13617318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57076857A Granted JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Country Status (1)

Country Link
JP (1) JPS58194382A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273364B1 (en) * 1986-12-26 1992-03-25 Idec Izumi Corporation Electronic part carrying strip and method of manufacturing the same
EP0646971B1 (en) 1993-09-30 1997-03-12 Siemens Aktiengesellschaft Two-terminal SMT-miniature-housing of semiconductor device and process of manufacturing the same
EP1566846B1 (en) 1997-07-29 2016-02-03 OSRAM Opto Semiconductors GmbH Optoelectronic device
JP5338899B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module
JP5338900B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104565U (en) * 1974-02-01 1975-08-28
US3914786A (en) * 1974-04-19 1975-10-21 Hewlett Packard Co In-line reflective lead-pair for light-emitting diodes
JPS5338973A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Lead frame
JPS5947462B2 (en) * 1977-01-13 1984-11-19 日本電気株式会社 Lead configuration for semiconductor devices
JPS53108880U (en) * 1977-02-08 1978-08-31
JPS5824453Y2 (en) * 1978-05-11 1983-05-25 三洋電機株式会社 light emitting diode board
JPS55105388A (en) * 1979-02-07 1980-08-12 Toshiba Corp Manufacture of light emission display device
JPS5776856A (en) * 1980-10-30 1982-05-14 Toshiba Corp Manufacture of semiconductor device
JPS582079A (en) * 1981-06-29 1983-01-07 Nippon Denyo Kk Light emitting diode lamp and manufacture thereof

Also Published As

Publication number Publication date
JPS58194382A (en) 1983-11-12

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