JPH0453012Y2 - - Google Patents

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Publication number
JPH0453012Y2
JPH0453012Y2 JP1984154540U JP15454084U JPH0453012Y2 JP H0453012 Y2 JPH0453012 Y2 JP H0453012Y2 JP 1984154540 U JP1984154540 U JP 1984154540U JP 15454084 U JP15454084 U JP 15454084U JP H0453012 Y2 JPH0453012 Y2 JP H0453012Y2
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JP
Japan
Prior art keywords
temperature
heater
laser
power supply
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984154540U
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Japanese (ja)
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JPS6169856U (en
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Priority to JP1984154540U priority Critical patent/JPH0453012Y2/ja
Publication of JPS6169856U publication Critical patent/JPS6169856U/ja
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Description

【考案の詳細な説明】[Detailed explanation of the idea]

イ 考案の目的 〔産業上の利用分野〕 本考案は、例えばレーザビームプリンタ・レー
ザデイスク装置等におけるレーザビーム発振源と
して使用されるレーザ装置に関する。 〔従来の技術〕 例えば、半導体レーザは、温度変化によつてレ
ーザの波長の変動が発生する特性を有している。
一般に温度によつてレーザ波長はおおよそ0.2〜
0.3nm/℃の割合で変化する。従つてレーザチツ
プの温度が標準室温(25℃)から35℃に変化する
と、おおよそ2〜3nmだけ波長が長い方へシフト
する。逆にレーザチツプの温度が標準室温から5
℃に低下すると、レーザの波長は短い方に4〜
6nmシフトする。 このようなレーザの温度依存性は半導体レーザ
に限らず、例えば色素レーザ、ガスレーザ等に於
いても見られる現象である。以下便宜上レーザを
半導体レーザとして説明する。 そこでレーザ装置に於いてはレーザ及びその周
辺温度を所定の略一定温度に管理する処置がとら
れる。 その1つとしてペルチエ素子を利用したものが
ある。これはレーザチツプ及び周囲温度をペルチ
エ素子により常に20〜25℃程度の温度に維持管理
するものである。しかし20〜25℃にレーザチツプ
を維持するためには、ペルチエ素子に大電流が必
要であり、従つて大型でかつ大容量の電源が必要
であつた。また、ペルチエ素子自体が大型であ
り、かつペルチエ素子自体も必ずしも安定したも
のではない。 又、ニクロム線等の発熱ヒータを利用して該ヒ
ータに対する通電を制御してレーザチツプ及びそ
の周囲温度を管理するものでもある。第1図は発
熱ヒータを利用して温度管理するようにした半導
体レーザユニツト20の一例の構成略図である。 即ち、ユニツト20は基板21と、この基板2
1に固定された支持体22と、この支持体22に
固定された半導体レーザ1(チツプ)と、支持体
22、及びレーザ1を覆つて密閉するキヤツプ2
3とを有している。キヤツプ23はレーザビーム
2の通過するガラス窓24を有している。21,
22,23(窓24を除く)の部材はアルミニウ
ム、真鍮、ステンレススチール等、金属の熱伝導
性のよい材質で形成してもよい。 25はニクロム等の発熱ヒータであり、支持体
22等、良熱導体を介してレーザ1と熱的に結合
されている。26はレーザ1の近傍に配置された
サーミスタ、熱伝対等の温度検知素子である。素
子26の信号は周知の温度調節回路27に伝達さ
れ、電源28からヒータ25に印加する電力を回
路27にて上記信号に応じて断続し、レーザ1の
温度を所定の温度に保つ。この所定温度Tは装置
の使用環境の上限温度、例えば35℃よりも5〜10
℃高い温度、例えば40〜45℃の間であればよい。
レーザを余り高い温度、おおよそ50℃以上で、駆
動することはレーザの劣化を速めるため好ましく
ない。 〔考案が解決すべき問題点〕 この温度管理方式は精度的にはラフで、管理温
度変動幅(リツプル)が比較的大きく、理想的な
管理変動量±0.2℃以内での温度調整管理は難し
い。即ち、レーザの温度調整の中心温度を40〜45
℃の間に取つても、サーミスタ等の温度検知手段
の熱伝導時間による検知遅れ、発熱ヒータの立ち
上り時間による遅れが温度変動を大きくする。こ
の変動量が±0.2℃以上になると、例えばレーザ
ビームプリンタに於てはレーザの波長変動に起因
する画像の変動が生じてくる。例えば、ラインの
太さがばらつくとか濃度にムラが表われる問題が
生じてくる。また、1℃以上の温度変動を周期的
に与え続けることは半導体レーザの結晶の安定性
にも悪い影響を与えレーザの寿命を短くする欠点
がある。 本考案は発熱ヒータを利用して該ヒータへの通
電を制御してレーザの温度調整管理を行うもので
あるが、その管理温度変動量を±0.2℃以内にお
さえることを可能にし、これにより常に安定した
レーザ発振がなされるようにしたレーザ装置を提
供することを目的とする。 ロ 考案の構成 〔問題点を解決するための手段〕 本願考案は、レーザ光源と、該レーザ光源を加
熱するヒータと、該ヒータに電力を供給する電源
と、前記レーザ光源の温度を検知する手段と、該
検知手段で検知された温度が所定温度未満の時は
前記電源よりヒータに通電し、前記検知手段で検
知された温度が所定温度以上に達した時は電源か
らヒータへの通電を停止する動作を繰り返すこと
によつて、前記レーザ光源の温度調整を行う温度
調整回路とから成るレーザ装置において、前記ヒ
ータに通電する期間には、電源からヒータにパル
ス通電が行われ、且つ、前記温度調整回路が、前
記検知手段で検知された温度が所定温度以上で電
源からヒータへの通電が停止された期間に前記電
源の出力電圧を測定する手段と、前記ヒータへの
通電が停止された期間に引き続くヒータに通電す
る期間において、前記電圧測定手段で測定された
電圧に応じて、前記ヒータへのパルス通電におけ
るオン時間とオフ時間との比を変化させる手段と
を備えたことを特徴とするレーザ装置、である。 〔作用〕 パルス通電を行なうことで、単位時間当りのヒ
ータの発熱量を小さくおさえることが可能であ
り、温度検知手段に検知遅れが生じにくくなるた
めヒータの温度リツプルが小さくなり温度精度が
向上すると共に、通電の停止期間に測定された電
源の出力電圧に応じて、ヒータへのパルス通電に
おけるオン時間とオフ時間とのヒータを変化させ
ることで、電源の電圧が変化した場合には高精度
に温度を調整することを可能とし、しかも比の負
荷抵抗による電圧降下やパルス通電による電圧を
変動に影響されずに正確に電源電圧を測定するこ
とができ、レーザの管理温度変動を±0.2度以内
におさえての高精度の温調が可能となつた。 〔実施例〕 第2図は本考案に従つて温調管理するようにし
た半導体レーザユニツトの一実施例を示すもので
あり、第1図例のユニツトと共通する構成部材に
は共通の符号を付して再度の説明を省く。 29はヒータ25への電力供給電源28の電圧
検知回路である。温度検知素子26の信号は温度
調整回路27に伝達される。一方で電源28の出
力電圧は電圧検知回路29で測定され温度調整回
路27に伝達される。温度調整回路27は、上述
の2つの信号をもとに電源28がヒータ25に印
加する電力を断続する。その場合、ヒータ25へ
の電力供給時にはパルス通電を行い、電力供給を
行わない時にはパルス通電を完全に遮断するもの
とする。即ち、温度検知手段26が温調温度To
以上に達したことを検知すると、温度調整回路2
7は電源28からヒータ25に入力されていたパ
ルス通電を遮断する。温度検知手段26が温調温
度To未満になつたことを検知すると、温度調整
回路はヒータ25とパルス電源28を接続して電
力の供給を再開する。このようにパルス通電を行
うことで、単位時間当りのヒータの発熱量を小さ
くおさえることが可能であり、温度検知手段26
に検知遅れが生じにくくなるためヒータ25の温
度リツプルが小さくなる。従つて高精度の温調が
可能となる。 さらにこのパルス通電時のパルスオン時間とパ
ルスオフ時間の比率をヒータへの電力供給を行う
電源電圧をもとにして切り換える温度調整回路を
取り付けることでレーザの管理温度変動を±0.2
℃以内におさえて高精度の温調が可能となつた。 以下その断続の手順について説明する。 温度検知手段26が温調温度To以上に達した
ことを検知すると、温度調整回路27は電源28
からヒータ25に入力されていた電力を遮断す
る。この状態で電圧検知手段29は電源28の電
圧Vを検知し、温度調整回路27へ入力する。 温度検知手段26が温調温度To未満になつた
ことを検知すると、温度調整回路27はヒータ2
5と電源28を接続して電力の供給を再開する。
この時電力の供給はパルス入力で行い、このパル
スのオン時間とオフ時間の比は、前述の電源電圧
Vをもとにして温度調整回路27内で演算されて
決定される。 この通電は温度検知手段26が再び温度がTo
以上になつたことを検知すると停止される。この
温度調整の模様を第3図に示す。即ち、ヒータ2
5のオフ時に電源電圧がVbであることを検知し
た場合、温度調整回路27は電圧が高いと判断し
その次のヒータ25への通電時のパルス間隙を符
号Bの様に広くする。逆に電源電圧がVcである
ことを検知した場合は、温度調整回路27は電圧
が低いと判断し、その次のヒータ25への通電時
のパルス間隔を符号Cの様に狭いものとする(図
ではフル通電である)。この様に、ヒータ25へ
の通電を遮断した状態の時に電源電圧の測定を行
う理由は、電源にアンレギユレート電源を使用し
ておりヒータ25への通電中はヒータの負荷抵抗
による電圧降下、及びパルス通電による電圧の変
動が激しく正確な電圧検知ができないためであ
る。 実験では、レーザユニツト20の熱容量
26.5J/degのものに対して、ヒータ25として出
力12wattのものを用いた。この時、電源28の
出力電圧とパルス通電中のオンレベル時間とオフ
レベル時間の比は下表に示したものを用いた。
B. Purpose of the invention [Field of industrial application] The present invention relates to a laser device used as a laser beam oscillation source in, for example, a laser beam printer or a laser disk device. [Prior Art] For example, a semiconductor laser has a characteristic that the wavelength of the laser changes due to temperature changes.
Generally, depending on the temperature, the laser wavelength is approximately 0.2 ~
It changes at a rate of 0.3 nm/°C. Therefore, when the temperature of the laser chip changes from standard room temperature (25°C) to 35°C, the wavelength shifts by approximately 2 to 3 nm towards longer wavelengths. Conversely, the temperature of the laser chip is
℃, the wavelength of the laser decreases from 4 to
6nm shift. Such temperature dependence of lasers is a phenomenon that is observed not only in semiconductor lasers but also in, for example, dye lasers, gas lasers, and the like. For convenience, the laser will be described below as a semiconductor laser. Therefore, in the laser device, measures are taken to control the temperature of the laser and its surroundings to a predetermined, substantially constant temperature. One of them is one that uses a Peltier element. This uses a Peltier device to maintain and control the laser chip and ambient temperature at approximately 20 to 25°C. However, in order to maintain the laser chip at 20 to 25°C, the Peltier element requires a large current, and therefore a large and large-capacity power supply is required. Further, the Peltier element itself is large, and the Peltier element itself is not necessarily stable. In addition, the temperature of the laser chip and its surroundings is managed by controlling the supply of electricity to the heater using a heat-generating heater such as a nichrome wire. FIG. 1 is a schematic diagram of an example of a semiconductor laser unit 20 whose temperature is controlled using a heat generating heater. That is, the unit 20 includes a substrate 21 and this substrate 2.
1, a semiconductor laser 1 (chip) fixed to this support 22, a cap 2 that covers and seals the support 22 and the laser 1.
3. The cap 23 has a glass window 24 through which the laser beam 2 passes. 21,
The members 22 and 23 (excluding the window 24) may be made of a metal material with good thermal conductivity, such as aluminum, brass, or stainless steel. Reference numeral 25 denotes a heat generating heater made of nichrome or the like, which is thermally coupled to the laser 1 via a good heat conductor such as the support 22. 26 is a temperature sensing element such as a thermistor or thermocouple placed near the laser 1. The signal from the element 26 is transmitted to a well-known temperature control circuit 27, and the circuit 27 cuts off and on the power applied to the heater 25 from the power source 28 in accordance with the signal, thereby maintaining the temperature of the laser 1 at a predetermined temperature. This predetermined temperature T is 5 to 10 degrees higher than the upper limit temperature of the usage environment of the device, for example, 35℃.
The temperature may be as high as 40°C to 45°C.
Driving the laser at too high a temperature, approximately 50° C. or higher, is undesirable because it accelerates the deterioration of the laser. [Problems to be solved by the invention] This temperature control method is rough in terms of accuracy, and the control temperature fluctuation range (ripple) is relatively large, making it difficult to control temperature within the ideal control fluctuation amount of ±0.2℃. . In other words, the center temperature of the laser temperature adjustment should be set to 40 to 45
℃, the detection delay due to the heat conduction time of temperature detection means such as a thermistor, and the delay due to the start-up time of the heat generating heater increase temperature fluctuations. When this amount of variation exceeds ±0.2° C., for example, in a laser beam printer, image variation occurs due to the wavelength variation of the laser. For example, problems arise such as variations in line thickness or uneven density. Furthermore, continuing to periodically apply temperature fluctuations of 1° C. or more has the disadvantage of adversely affecting the stability of the semiconductor laser crystal and shortening the life of the laser. This invention utilizes a heat-generating heater to control the power supply to the heater to manage the temperature adjustment of the laser, and it is possible to keep the controlled temperature variation within ±0.2℃, thereby making it possible to always An object of the present invention is to provide a laser device capable of stable laser oscillation. B. Structure of the invention [Means for solving the problem] The invention includes a laser light source, a heater that heats the laser light source, a power source that supplies power to the heater, and a means for detecting the temperature of the laser light source. When the temperature detected by the detection means is less than a predetermined temperature, the power supply supplies power to the heater, and when the temperature detected by the detection means reaches a predetermined temperature or higher, the power supply to the heater is stopped. In a laser device comprising a temperature adjustment circuit that adjusts the temperature of the laser light source by repeating the above operation, during the period when the heater is energized, a pulse current is applied from the power source to the heater, and the temperature is adjusted. means for measuring the output voltage of the power supply during a period in which the temperature detected by the detection means is equal to or higher than a predetermined temperature and the power supply from the power supply to the heater is stopped; and a period in which the power supply to the heater is stopped. The heater is characterized by comprising means for changing the ratio of on time and off time in pulse energization to the heater in accordance with the voltage measured by the voltage measuring means during the period in which the heater is energized subsequent to . It is a laser device. [Function] Pulse energization makes it possible to reduce the amount of heat generated by the heater per unit time, which reduces the possibility of detection delays in the temperature detection means, which reduces the temperature ripple of the heater and improves temperature accuracy. In addition, by changing the heater's on time and off time during pulse energization to the heater according to the output voltage of the power supply measured during the period when the energization is stopped, high accuracy can be achieved when the power supply voltage changes. It is possible to adjust the temperature, and it is also possible to accurately measure the power supply voltage without being affected by voltage drops due to specific load resistance or fluctuations in voltage due to pulsed energization, and laser control temperature fluctuations can be kept within ±0.2 degrees. It is now possible to control the temperature with high precision. [Embodiment] Fig. 2 shows an embodiment of a semiconductor laser unit that is temperature-controlled according to the present invention. Components common to the unit shown in Fig. 1 are given common reference numerals. The explanation will be omitted. Reference numeral 29 denotes a voltage detection circuit of the power supply 28 that supplies power to the heater 25. A signal from the temperature sensing element 26 is transmitted to a temperature adjustment circuit 27. On the other hand, the output voltage of the power supply 28 is measured by a voltage detection circuit 29 and transmitted to the temperature adjustment circuit 27. The temperature adjustment circuit 27 intermittents the power that the power supply 28 applies to the heater 25 based on the above two signals. In that case, pulse energization is performed when power is supplied to the heater 25, and pulse energization is completely cut off when power is not supplied. That is, the temperature detection means 26 detects the temperature control temperature To.
When it is detected that the above temperature has been reached, the temperature adjustment circuit 2
7 cuts off the pulse current input from the power source 28 to the heater 25 . When the temperature detection means 26 detects that the temperature has become lower than the temperature control temperature To, the temperature adjustment circuit connects the heater 25 and the pulse power supply 28 and restarts the supply of electric power. By performing pulse energization in this manner, it is possible to suppress the amount of heat generated by the heater per unit time, and the temperature detection means 26
Since a detection delay is less likely to occur, the temperature ripple of the heater 25 is reduced. Therefore, highly accurate temperature control is possible. Furthermore, by installing a temperature adjustment circuit that switches the ratio of pulse on time and pulse off time during pulse energization based on the power supply voltage that supplies power to the heater, the laser management temperature fluctuation can be reduced by ±0.2
It has become possible to control the temperature with high precision within ℃. The intermittent procedure will be explained below. When the temperature detection means 26 detects that the temperature control temperature To has reached or higher, the temperature adjustment circuit 27 turns on the power supply 28.
The power input to the heater 25 is cut off. In this state, the voltage detection means 29 detects the voltage V of the power supply 28 and inputs it to the temperature adjustment circuit 27. When the temperature detection means 26 detects that the temperature has become lower than the temperature control temperature To, the temperature adjustment circuit 27 switches the heater 2
5 and the power supply 28 to resume power supply.
At this time, power is supplied by pulse input, and the ratio of the on time and off time of this pulse is calculated and determined within the temperature adjustment circuit 27 based on the above-mentioned power supply voltage V. This energization causes the temperature detection means 26 to reach the temperature To again.
It will be stopped if it detects that it has exceeded the limit. The pattern of this temperature adjustment is shown in FIG. That is, heater 2
If it is detected that the power supply voltage is Vb when the heater 25 is turned off, the temperature adjustment circuit 27 determines that the voltage is high and widens the pulse gap as indicated by symbol B when the heater 25 is energized next time. Conversely, if it detects that the power supply voltage is Vc, the temperature adjustment circuit 27 determines that the voltage is low, and narrows the pulse interval when energizing the heater 25 next time as shown by symbol C ( In the figure, it is fully energized). In this way, the reason why the power supply voltage is measured when the power supply to the heater 25 is cut off is because an unregulated power supply is used as the power supply, and while the heater 25 is being supplied with power, the voltage drop due to the load resistance of the heater and the pulse This is because the voltage fluctuates drastically due to energization, making accurate voltage detection impossible. In the experiment, the heat capacity of the laser unit 20
In contrast to the heater 25 of 26.5 J/deg, a heater 25 with an output of 12 watt was used. At this time, the output voltage of the power supply 28 and the ratio of the on-level time to the off-level time during pulse energization were as shown in the table below.

【表】 第4図にこの温度調整のフローチヤートを示
す。チヤートはレーザプリンタの電源がオンされ
た後、レーザユニツト20が加熱され始め、最初
に設定温度Toを越えた時点をスタートする。以
下フローに従つて説明する。 スタート時には、レーザユニツト温度TがTo
をこえているのでヒータ25をOFF状態にする
(ステツプ1)。その後、徐々にレーザユニツト2
0は冷えてやがてTo以下の温度になる(ステツ
プ2)。すると電源電圧Vの測定がなされ(ステ
ツプ3)、又温度調整回路27に電源電圧が入力
される。上記の測定電圧Vをもとにマイクロコン
ピユータでヒータ通電のパルス間隔を決定し(ス
テツプ4)、ヒータ25にパルス通電を開始する
(ステツプ5)。 温度検知手段26がユニツト20の温度Tが
To以上になつたことを検知するまで、この通電
が続く。T>Toとなると(ステツプ6)、再びフ
ローチヤートのスタート直後のステツプ1へもど
る。 以上のような制御フローによりレーザユニツト
の温度変動は微小なものとすることができる。上
記のフローは装置の電源が切られるまで続き、切
られる時又は電源投入時時にリセツトされるもの
である。 なお、定電圧電源をヒータ用電源として使用す
る場合は上述のようなパルス通電を行う必要はな
い。しかし、電源を定電圧することによつて回路
のコストが高くなり電源も大きくなるため、低価
格で小型のプリンタを製造するには好ましくな
い。また定電圧電源からの発熱量が大きく装置の
昇温も問題となる。また、電力的にもムダが多い
ので省エネに向かない。 ハ 発明の効果 以上のように、本発明に依ればレーザの温度を
±0.2℃以内の小さい変動幅で高精度に温度管理
できるので、従来問題であつた温度変化によるレ
ーザ波長の変化をおさえることができ、例えばレ
ーザビームプリンタについていえばレーザの温度
変化による画像の濃度ムラやライン幅のバラツキ
などをなくすことが可能となつた。 また、小型で安価な半導体レーザをレーザビー
ムプリンタ等の光源として使用することを可能と
し、大幅なコストダウンと装置の小型化・軽量化
が可能である。 さらに電源も定電圧電源を必要としないこと
で、小型の安価な電源で良く、部品や電源に要す
るスペースも小さくてすみ、装置の小型化と低価
格化ができる利点が有ると共に、電力を少なくて
すみ省エネルギに適しているうえ不必要な放熱に
よる装置の昇温を防止できる。 以上半導体レーザ装置を例にして説明したが、
レーザの発振波長が温度依存する現象は色素レー
ザ・ガスレーザ等他のレーザ装置についても認め
られる。従つてこの様なレーザ装置についても本
考案は有効に適用できる。
[Table] Figure 4 shows a flowchart for this temperature adjustment. The chart starts when the laser unit 20 begins to heat up after the power of the laser printer is turned on and the temperature exceeds the set temperature To for the first time. The process will be explained below according to the flow. At the start, the laser unit temperature T is
is exceeded, so the heater 25 is turned off (step 1). After that, gradually the laser unit 2
0 cools and eventually reaches a temperature below To (step 2). Then, the power supply voltage V is measured (step 3), and the power supply voltage is input to the temperature adjustment circuit 27. Based on the above measured voltage V, the microcomputer determines the pulse interval for energizing the heater (step 4), and starts energizing the heater 25 in pulses (step 5). The temperature detection means 26 detects that the temperature T of the unit 20 is
This energization continues until it detects that the voltage has exceeded To. When T>To (step 6), the process returns to step 1 immediately after the start of the flowchart. With the control flow described above, temperature fluctuations in the laser unit can be minimized. The above flow continues until the device is powered down and is reset at either time or upon power up. Note that when a constant voltage power source is used as a power source for the heater, it is not necessary to perform pulse energization as described above. However, using a constant voltage power supply increases the cost of the circuit and increases the size of the power supply, which is not preferable for producing a small, low-cost printer. Furthermore, the amount of heat generated from the constant voltage power source is large, causing a problem of temperature rise of the device. In addition, it wastes a lot of electricity, so it is not suitable for energy saving. C. Effects of the Invention As described above, according to the present invention, the temperature of the laser can be controlled with high precision within a small fluctuation range of ±0.2°C, thereby suppressing changes in the laser wavelength due to temperature changes, which was a problem in the past. For example, in the case of laser beam printers, it has become possible to eliminate uneven image density and line width variations caused by changes in laser temperature. Furthermore, it is possible to use a small and inexpensive semiconductor laser as a light source for a laser beam printer, etc., and it is possible to significantly reduce costs and make the device smaller and lighter. Furthermore, since the power supply does not require a constant voltage power supply, a small and inexpensive power supply can be used, and the space required for parts and the power supply is also small, which has the advantage of making the device smaller and cheaper, as well as reducing power consumption. Not only is it suitable for energy saving, it also prevents the temperature of the device from rising due to unnecessary heat radiation. The above explanation was given using a semiconductor laser device as an example, but
The phenomenon that the laser oscillation wavelength depends on temperature is also observed in other laser devices such as dye lasers and gas lasers. Therefore, the present invention can be effectively applied to such a laser device as well.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はレーザユニツトの縦断面図、第2図は
本発明によるレーザユニツトの縦断面図、第3図
は本発明によるレーザユニツトの温度調整をする
タイミングチヤート、第4図は本発明による温度
調整を示すフローチヤート。 1はレーザ、25はヒータ、26は温度検知手
段、27は温度調整回路、28は電源、29は電
圧検知手段。
FIG. 1 is a longitudinal sectional view of the laser unit, FIG. 2 is a longitudinal sectional view of the laser unit according to the present invention, FIG. 3 is a timing chart for temperature adjustment of the laser unit according to the present invention, and FIG. 4 is a temperature chart according to the present invention. Flowchart showing adjustments. 1 is a laser, 25 is a heater, 26 is a temperature detection means, 27 is a temperature adjustment circuit, 28 is a power supply, and 29 is a voltage detection means.

Claims (1)

【実用新案登録請求の範囲】 レーザ光源と、該レーザ光源を加熱するヒータ
と、該ヒータに電力を供給する電源と、前記レー
ザ光源の温度を検知する手段と、該検知手段で検
知された温度が所定温度未満の時は前記電源より
ヒータに通電し、前記検知手段で検知された温度
が所定温度以上に達した時は電源からヒータへの
通電を停止する動作を繰り返すことによつて、前
記レーザ光源の温度調整を行う温度調整回路とか
ら成るレーザ装置において、 前記ヒータに通電する期間には、電源からヒー
タにパルス通電が行われ、且つ、前記温度調整回
路が、 前記検知手段で検知された温度が所定温度以上
で電源からヒータヘの通電が停止された期間に前
記電源の出力電圧を測定する手段と、 前記ヒータへの通電が停止された期間に引き続
くヒータに通電する期間において、前記電圧測定
手段で測定された電圧に応じて、前記ヒータへの
パルス通電におけるオン時間とオフ時間との比を
変化させる手段とを備えた ことを特徴とするレーザ装置。
[Claims for Utility Model Registration] A laser light source, a heater that heats the laser light source, a power source that supplies power to the heater, a means for detecting the temperature of the laser light source, and a temperature detected by the detecting means. By repeating the operation of energizing the heater from the power supply when the temperature is lower than a predetermined temperature, and stopping the power supply from the power supply to the heater when the temperature detected by the detection means reaches the predetermined temperature or higher, In a laser device comprising a temperature adjustment circuit that adjusts the temperature of a laser light source, during a period in which the heater is energized, a pulse current is applied to the heater from a power source, and the temperature adjustment circuit is detected by the detection means. means for measuring the output voltage of the power source during a period in which the power supply from the power source to the heater is stopped when the temperature at which the heater is turned is equal to or higher than a predetermined temperature; A laser device comprising: means for changing the ratio of on time to off time in pulse energization to the heater according to the voltage measured by the measuring means.
JP1984154540U 1984-10-13 1984-10-13 Expired JPH0453012Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984154540U JPH0453012Y2 (en) 1984-10-13 1984-10-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984154540U JPH0453012Y2 (en) 1984-10-13 1984-10-13

Publications (2)

Publication Number Publication Date
JPS6169856U JPS6169856U (en) 1986-05-13
JPH0453012Y2 true JPH0453012Y2 (en) 1992-12-14

Family

ID=30712531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984154540U Expired JPH0453012Y2 (en) 1984-10-13 1984-10-13

Country Status (1)

Country Link
JP (1) JPH0453012Y2 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464984A (en) * 1977-11-02 1979-05-25 Canon Inc Semiconductor laser device
JPS57212502A (en) * 1981-06-25 1982-12-27 Oki Electric Ind Co Ltd Pulse width modulation type temperature controlling circuit
JPH0721738B2 (en) * 1983-01-31 1995-03-08 キヤノン株式会社 Temperature control device

Also Published As

Publication number Publication date
JPS6169856U (en) 1986-05-13

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