JPH0458187B2 - - Google Patents
Info
- Publication number
- JPH0458187B2 JPH0458187B2 JP62133144A JP13314487A JPH0458187B2 JP H0458187 B2 JPH0458187 B2 JP H0458187B2 JP 62133144 A JP62133144 A JP 62133144A JP 13314487 A JP13314487 A JP 13314487A JP H0458187 B2 JPH0458187 B2 JP H0458187B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- thermally conductive
- aluminum nitride
- binder
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 239000006023 eutectic alloy Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- -1 etc. alone Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、窒化アルミニウム系焼結体を基体と
した熱伝導性基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a thermally conductive substrate based on an aluminum nitride-based sintered body.
（従来の技術）
従来より回路基板の構成において、酸化ベリリ
ウム系絶縁板を基板として用いると、その良好な
熱伝導性のために小型ながら高出力の回路基板が
得られることが知られている。これは基板上に設
けられた電子部品の動作発熱が容易に放熱される
ため、電子部品の負荷を大きくとりうることにな
るからである。ところでこの酸化ベリリウム系絶
縁基板は毒性の点で問題があり、この代替えとし
て窒化ホウ素系焼結体や窒化アルミニウム系焼結
体の使用が試みられている。特に、窒化アルミニ
ウム系焼結体は窒化ホウ素系焼結体に比べ安価に
得られること、さらに機械的強度も優れているこ
と等から絶縁基体として注目されている。(Prior Art) It has been known that when a beryllium oxide-based insulating plate is used as a substrate in the construction of a circuit board, a small but high-output circuit board can be obtained due to its good thermal conductivity. This is because the heat generated by the operation of electronic components provided on the board is easily dissipated, which can place a large load on the electronic components. However, this beryllium oxide-based insulating substrate has a problem in terms of toxicity, and attempts have been made to use boron nitride-based sintered bodies or aluminum nitride-based sintered bodies as an alternative. In particular, aluminum nitride-based sintered bodies are attracting attention as insulating substrates because they can be obtained at lower cost than boron nitride-based sintered bodies and have superior mechanical strength.
（発明が解決しようとする問題点）
しかしながら、このような焼結窒化アルミニウ
ム系基体は金属との濡れ性に劣るため、熱伝導性
向上を目的として、例えばモリブデン−マンガン
合金、モリブデン、タングステン等をメタライズ
しようとしても被着し難いという欠点があつた。(Problems to be Solved by the Invention) However, since such a sintered aluminum nitride-based substrate has poor wettability with metal, for example, molybdenum-manganese alloy, molybdenum, tungsten, etc. are used to improve thermal conductivity. Even if metallization was attempted, the problem was that it was difficult to adhere.
従つて、焼結窒化アルミニウム系基体について
は所要面に金属層が強固に接合された熱伝導性の
良好な回路基板用に適するものは未だ開発されて
いないのが実情である。 Therefore, the reality is that no sintered aluminum nitride-based substrate has yet been developed that has a metal layer firmly bonded to a required surface and is suitable for use in a circuit board with good thermal conductivity.
本発明はこのような問題を解決するためになさ
れたもので、毒性がなく熱伝導性および強度に優
れた焼結窒化アルミニウム系基体を用い、所要面
に金属層が強固に接合された熱伝導性基板を提供
することを目的とする。 The present invention was made to solve these problems, and uses a sintered aluminum nitride base that is non-toxic and has excellent thermal conductivity and strength, and has a metal layer firmly bonded to the required surface. The purpose is to provide a sexual substrate.
（問題点を解決するための手段）
本発明者らはこのような問題点を解決するべく
種々検討した結果、焼結窒化アルミニウム系基体
に結合剤を含有させてから金属と接合させれば、
焼結窒化アルミニウム系基体と被覆金属とが強固
に一体化し、剥離の生じない、長期間にわたつて
優れた熱伝導性を有する熱伝導性基板が得られる
ことを見出した。
(Means for Solving the Problems) As a result of various studies to solve these problems, the present inventors found that if a sintered aluminum nitride-based substrate contains a binder and then is bonded to metal,
It has been found that the sintered aluminum nitride-based substrate and the coating metal are firmly integrated, and a thermally conductive substrate that does not peel off and has excellent thermal conductivity over a long period of time can be obtained.
すなわち本発明の熱伝導性基板は、基体内に金
属との結合剤としての酸素を酸化物として５重量
％を超え50重量％以下の範囲で予め含有させた焼
結窒化アルミニウム系基体に、金属を加熱により
直接接合してなることを特徴としている。 That is, the thermally conductive substrate of the present invention has a sintered aluminum nitride-based substrate that has previously contained oxygen as an oxide as a binder with metal in a range of more than 5% by weight and less than 50% by weight, and a metal. It is characterized by being directly joined by heating.
本発明における焼結窒化アルミニウム系基体と
しては、窒化アルミニウム粉末もしくは窒化アル
ミニウムに焼結助剤としてイツトリウム、アルミ
ニウム、カルシウム、ストロンチウム、バリウム
等の酸化物、炭酸塩、または他の塩類あるいは炭
化ケイ素を少なくとも１種添加した粉末に、例え
ば結合剤として酸素を使用した場合、酸化物の形
で金属との結合に必要な量を添加して、これを所
望の形状に成形し焼結したものを使用する。 The sintered aluminum nitride-based substrate in the present invention includes aluminum nitride powder or aluminum nitride containing at least oxides such as yttrium, aluminum, calcium, strontium, barium, etc., carbonates, or other salts, or silicon carbide as a sintering aid. For example, if oxygen is used as a binder in the powder with one type of addition, add the amount necessary for bonding with the metal in the form of an oxide, shape it into the desired shape, and sinter it. .
この結合剤の含有量は、例えば結合剤が酸素の
場合、組成物中酸化物の形で５〜50重量％、好ま
しくは10〜30重量％を占める量が適している。こ
の値未満では接合が不充分になり、この値を越え
ると本来の窒化アルミニウムの特性が失われる。 For example, when the binder is oxygen, the content of the binder is preferably 5 to 50% by weight, preferably 10 to 30% by weight in the composition in the form of oxide. If it is less than this value, the bonding will be insufficient, and if it exceeds this value, the original properties of aluminum nitride will be lost.
酸化物としては、酸化イツトリウム、酸化チタ
ン、アルミナ、二酸化けい素、酸化マグネシウム
およびガラス質あるいは焼結助剤としてあげた酸
化物等が挙げられる。 Examples of the oxide include yttrium oxide, titanium oxide, alumina, silicon dioxide, magnesium oxide, and the oxides listed as glass or sintering aids.
本発明に適用される金属としては、銅、鉄、ク
ロム、ニツケル、モリブデン、銀、コバルト、ア
ルミニウム等の単体、合金あるいは混合物があげ
られ、その形状は板状等の有形状のもののほか箔
状、粒状であつてもよい。また、これらの金属
は、金属中に結合剤を100〜2000ppm含有してい
るものの使用が好ましく、その理由は接合がより
容易になることによる。例えば金属が銅で結合剤
が酸素の場合は銅として、タフピツチ電解銅を使
用することが好ましい。あるいは金属をあらかじ
め結合剤で表面処理し、表面に200〜5000Åの結
合剤を含む層を形成したものを使用すれば同様に
接合が容易になる。 The metals applicable to the present invention include copper, iron, chromium, nickel, molybdenum, silver, cobalt, aluminum, etc. alone, alloys, or mixtures, and the shapes include tangible forms such as plates and foils. , may be granular. Further, it is preferable to use these metals containing 100 to 2000 ppm of a binder, because bonding becomes easier. For example, when the metal is copper and the binder is oxygen, it is preferable to use Toughpitch electrolytic copper as the copper. Alternatively, if a metal is surface-treated with a binder in advance and a layer containing the binder of 200 to 5000 Å is used on the surface, bonding will be similarly facilitated.
本発明の熱伝導性基板は、結合剤を含有させた
焼結窒化アルミニウム系基体上に金属を接触配置
させ、これを加熱することによつて得られる。金
属は基体全体に設けてもよく、あるいは島状また
は格子状に選択的に設けてもよい。この加熱温度
は、金属の融点以下でかつ金属と結合剤との共晶
合金の共晶温度以上が適している。例えば金属が
銅で結合剤が酸素の場合は、銅の融点（1083℃）
以下、銅−酸化銅の共晶温度（1065℃）以上であ
る。また、加熱に際して金属として結合剤を含有
するもの、あるいは結合剤で表面処理したものを
使用する場合は、金属、結合剤、窒化アルミニウ
ムに対して不活性なガス雰囲気、例えば窒素ガス
雰囲気中で加熱することが好ましく、結合剤を含
有しない金属を使用する場合は、結合剤を0.03〜
0.1vol％含有する反応性のガス雰囲気中で加熱す
ることが接合のしやすさの点で好ましい。 The thermally conductive substrate of the present invention can be obtained by placing a metal in contact with a sintered aluminum nitride-based substrate containing a binder and heating the substrate. The metal may be provided over the entire substrate, or may be provided selectively in the form of islands or grids. This heating temperature is suitably below the melting point of the metal and above the eutectic temperature of the eutectic alloy of the metal and the binder. For example, if the metal is copper and the binder is oxygen, the melting point of copper (1083℃)
Below, the temperature is higher than the eutectic temperature of copper-copper oxide (1065°C). In addition, when heating metals that contain a binder or whose surface has been treated with a binder, heat in a gas atmosphere that is inert to the metal, binder, and aluminum nitride, such as a nitrogen gas atmosphere. If metals containing no binder are used, the binder should be
Heating in a reactive gas atmosphere containing 0.1 vol% is preferable from the viewpoint of ease of bonding.
（作用）
本発明の熱伝導性基板において、基体の母材と
なる窒化アルミニウムは、熱伝導率が高く放熱性
に優れ、高電気絶縁性、低誘電率を示し、さらに
熱膨脹率も小さく、熱伝導性基板に必要とされる
種々の性質を有している。また、結合剤を含有さ
せた窒化アルミニウム系焼結体上に金属を直接接
触配置させ、これをコントロールされた雰囲気中
で加熱することによつて、接触界面に金属−結合
剤共晶液層を生成させ、この液層が窒化アルミニ
ウム系焼結体表面を濡らし、次いで冷却すること
により金属と焼結窒化アルミニウム系基体とが接
合されているので、接合力も強固である。(Function) In the thermally conductive substrate of the present invention, aluminum nitride, which is the base material of the base material, has high thermal conductivity, excellent heat dissipation, high electrical insulation, and low dielectric constant, and also has a small coefficient of thermal expansion. It has various properties required for a conductive substrate. In addition, by placing a metal in direct contact with an aluminum nitride-based sintered body containing a binder and heating it in a controlled atmosphere, a metal-binder eutectic liquid layer is formed at the contact interface. The metal and the sintered aluminum nitride base are bonded by forming a liquid layer, which wets the surface of the aluminum nitride sintered body, and then cooling the body, so that the bonding force is strong.
（実施例） 次に、本発明の実施例について説明する。(Example) Next, examples of the present invention will be described.
実施例
酸化イツトリウム５重量％、アルミナ５重量
％、二酸化けい素５重量％を含有する窒化アルミ
ニウムからなる厚さ２mmのセラミツク板上に、酸
素含有量約400ppmのタフピツチ電解銅からなる
厚さ0.3mmの板状金属を直接接触させて、窒素ガ
ス雰囲気中で1075℃で10分間加熱して接合させ
た。次に、ほぼ室温まで冷却してから、接合部の
ピール強度を測定したところ、８〜12Kg／mm2と良
好な値を示した。Example: A 2 mm thick ceramic plate made of aluminum nitride containing 5% by weight of yttrium oxide, 5% by weight of alumina, and 5% by weight of silicon dioxide was placed on a 0.3 mm thick ceramic plate made of tough pitch electrolytic copper with an oxygen content of about 400 ppm. The metal plates were brought into direct contact and heated at 1075°C for 10 minutes in a nitrogen gas atmosphere to join them. Next, after cooling to approximately room temperature, the peel strength of the joint was measured and showed a good value of 8 to 12 Kg/mm 2 .
本発明の熱伝導性基板は、焼結窒化アルミニウ
ム系基体の表面に金属層が強固に密着して形成さ
れているので、熱抵抗が小さく、また耐電圧が高
く大電流を流すことができ、さらに小型化が可能
である。また、半田付けも容易であり、さらに切
断加工しても金属の剥離が生じず、生産性が大き
いという利点がある。
The thermally conductive substrate of the present invention has a metal layer firmly adhered to the surface of a sintered aluminum nitride base, so it has low thermal resistance, high withstand voltage, and can flow a large current. Further miniaturization is possible. In addition, it is easy to solder, and there is no peeling of the metal even when cutting, which has the advantage of high productivity.
Claims (1)
物として５重量％を超え50重量％以下の範囲で予
め含有させた焼結窒化アルミニウム系基体に、金
属を加熱により直接接合してなる熱伝導性基板。 ２ 金属は酸素を含有する特許請求の範囲第１項
記載の熱伝導性基板。 ３ 金属は酸素で処理されている特許請求の範囲
第１項記載の熱伝導性基板。 ４ 加熱温度は金属の融点以下でかつ金属と該金
属の酸化物との共晶合金の共晶温度以上である特
許請求の範囲第１項ないし第３項のいずれか１項
記載の熱伝導性基板。 ５ 金属は銅である特許請求の範囲第１項ないし
第４項のいずれか１項記載の熱伝導性基板。 ６ 加熱は不活性ガス雰囲気中で行なわれる特許
請求の範囲第１項ないし第５項のいずれか１項記
載の熱伝導性基板。[Scope of Claims] 1. Metal is heated to a sintered aluminum nitride-based substrate which has previously contained oxygen as an oxide in the range of more than 5% by weight and less than 50% by weight as a binder with the metal. A thermally conductive substrate that is directly bonded. 2. The thermally conductive substrate according to claim 1, wherein the metal contains oxygen. 3. The thermally conductive substrate according to claim 1, wherein the metal is treated with oxygen. 4. Thermal conductivity according to any one of claims 1 to 3, wherein the heating temperature is below the melting point of the metal and above the eutectic temperature of the eutectic alloy of the metal and the oxide of the metal. substrate. 5. The thermally conductive substrate according to any one of claims 1 to 4, wherein the metal is copper. 6. The thermally conductive substrate according to any one of claims 1 to 5, wherein the heating is performed in an inert gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62133144A JPS6355812A (en) | 1987-05-28 | 1987-05-28 | Heat conducting substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62133144A JPS6355812A (en) | 1987-05-28 | 1987-05-28 | Heat conducting substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355812A JPS6355812A (en) | 1988-03-10 |
| JPH0458187B2 true JPH0458187B2 (en) | 1992-09-16 |
Family
ID=15097763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62133144A Granted JPS6355812A (en) | 1987-05-28 | 1987-05-28 | Heat conducting substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355812A (en) |
-
1987
- 1987-05-28 JP JP62133144A patent/JPS6355812A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6355812A (en) | 1988-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5811390B2 (en) | Method of manufacturing thermally conductive substrate | |
| JP3408298B2 (en) | High thermal conductive silicon nitride metallized substrate, method of manufacturing the same, and silicon nitride module | |
| JPH05347469A (en) | Ceramic circuit board | |
| JP3193305B2 (en) | Composite circuit board | |
| JP2939444B2 (en) | Multilayer silicon nitride circuit board | |
| JP2772273B2 (en) | Silicon nitride circuit board | |
| JPH022836B2 (en) | ||
| JPH0328825B2 (en) | ||
| JPS61119094A (en) | High thermoconductive circuit board | |
| JPH0359036B2 (en) | ||
| JPH05226515A (en) | Aluminum nitride substrate having metallized layer and the metallizing method thereof | |
| JPS6355812A (en) | Heat conducting substrate | |
| JP2503778B2 (en) | Substrate for semiconductor device | |
| JP2751473B2 (en) | High thermal conductive insulating substrate and method of manufacturing the same | |
| JP2503775B2 (en) | Substrate for semiconductor device | |
| JP6819385B2 (en) | Manufacturing method of semiconductor devices | |
| JPH0748180A (en) | Ceramic-metal conjugate | |
| JP3180100B2 (en) | Semiconductor module | |
| JP3977875B2 (en) | Brazing alloy and joined body for joining of alumina-based ceramics-aluminum alloy | |
| JP2001339155A (en) | Ceramic circuit board | |
| JP4286992B2 (en) | Brazing material for Al circuit board and ceramic circuit board using the same | |
| JP2001160676A (en) | Ceramic circuit board | |
| JP2506270B2 (en) | High thermal conductivity circuit board and high thermal conductivity envelope | |
| JPS61281074A (en) | High heat conductivity aluminum nitride sintered body | |
| JPH10150125A (en) | Semiconductor module |