JPH0459603A - Production of high-quality oxide superconductor thin film and apparatus therefor - Google Patents
Production of high-quality oxide superconductor thin film and apparatus thereforInfo
- Publication number
- JPH0459603A JPH0459603A JP2170991A JP17099190A JPH0459603A JP H0459603 A JPH0459603 A JP H0459603A JP 2170991 A JP2170991 A JP 2170991A JP 17099190 A JP17099190 A JP 17099190A JP H0459603 A JPH0459603 A JP H0459603A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- chamber
- oxide superconductor
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 29
- 239000002887 superconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 238000007796 conventional method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高品質の酸化物超電導薄膜の作製方法および
装置に関する。より詳細には、高品質の酸化物超電導薄
膜を基板上に作製する方法およびその方法による成膜を
行うことが可能な装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method and apparatus for producing high quality oxide superconducting thin films. More specifically, the present invention relates to a method for producing a high-quality oxide superconducting thin film on a substrate and an apparatus capable of forming a film using the method.
従来の技術
Ｙ ｌＢａ２Ｃｕ３０７−Ｘ系、Ｂｉ２５ｒ２Ｃａ２Ｃ
ｕ３０ｘ系およびＴＩ２Ｂａ２Ｃａ２Ｃｕ３０ｗｌ系の
各酸化物超電導体は、臨界温度が高く、実用化が有望と
考えられてヒ）る。これらの酸化物超電導体を、ジョセ
フソン素子、超電導トランジスタ等の電子デバイスに応
用するためには、薄膜化することが必須である。Conventional technology Y lBa2Cu307-X system, Bi25r2Ca2C
The u30x-based and TI2Ba2Ca2Cu30wl-based oxide superconductors have high critical temperatures and are considered to be promising for practical use. In order to apply these oxide superconductors to electronic devices such as Josephson elements and superconducting transistors, it is essential to make them thin.
酸化物超電導体の薄膜作製方法としては、真空蒸着法、
ＭＢＥ法、スパッタリング法、ＣＶＤ法等が検討されて
いる。最も一般的に用いられている方法は、スパッタリ
ング法であるが、真空蒸着法では電磁場を全く印加しな
いで成膜することが可能であり、ＭＢＥ法では組成の制
御が厳密に行える等、高品質の酸化物超電導薄膜を作製
できる可能性がある。Methods for producing thin films of oxide superconductors include vacuum evaporation,
MBE method, sputtering method, CVD method, etc. are being considered. The most commonly used method is the sputtering method, but the vacuum evaporation method allows film formation without applying any electromagnetic field, and the MBE method allows for strict composition control, resulting in high quality. It is possible to create oxide superconducting thin films.
そこで、本発明の目的は、上記従来技術の問題点を解決
した高品質の酸化物超電導薄膜を低温で作製する方法お
よび装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method and apparatus for producing a high-quality oxide superconducting thin film at a low temperature, which solves the problems of the prior art described above.
発明が解決しようとする課題
上述のような、電子デバイスに使用するためには、単結
晶で、かつ平滑性に優れた酸化物超電導薄膜が好ましい
。Problems to be Solved by the Invention For use in electronic devices as described above, an oxide superconducting thin film that is single crystal and has excellent smoothness is preferable.
しかしながら、従来の方法では、成膜中の基板温度を高
＜ （７００℃前後）しないと、超電導特性のよい酸化
物超電導薄膜が得るれなか−った。このた約使用可能な
基板は限られており、特に半導体等高温に加熱する上枠
性が変化する材料の基板は使用できなかった。また、高
温で成膜を行うことにより、基板元素の拡散が起こるた
め、酸化物超電導薄膜の基板近傍の部分はその超電導特
性が劣化する。However, in the conventional method, an oxide superconducting thin film with good superconducting properties could not be obtained unless the substrate temperature during film formation was high (about 700° C.). Due to this, the usable substrates are limited, and in particular, substrates made of materials such as semiconductors whose upper frame properties change when heated to high temperatures cannot be used. Further, by forming the film at a high temperature, diffusion of substrate elements occurs, so that the superconducting properties of the oxide superconducting thin film in the vicinity of the substrate deteriorate.
従って、従来の方法では酸化物超電導体と半導体とを組
み合わせて使用した超電導電子デバイスを作製すること
が困難であった。Therefore, it has been difficult to fabricate a superconducting electronic device using a combination of an oxide superconductor and a semiconductor using conventional methods.
課題を解決するための手段
本発明に従うと、酸化物超電導体の薄膜を、物理的蒸着
法で基板上に作製する方法において、前記基板に高周波
振動を印加しながら成膜を行うことを特徴とする酸化物
超電導薄膜の作製方法が提供される。Means for Solving the Problems According to the present invention, a method for producing a thin film of an oxide superconductor on a substrate by physical vapor deposition is characterized in that the film is formed while applying high-frequency vibrations to the substrate. A method for producing an oxide superconducting thin film is provided.
また、本発明では、上記の方法を実施する装置として、
内部を高真空に排気可能なチャンバと、該チャンバ内に
任意のガスを導入できるガス供給手段と、前記チャンバ
内で基板を保持する基板ホルダと、前記基板を加熱する
加熱手段と、前記チャンバ内の薄膜原料にエネルギを印
加するエネルギ手段とを具備し、酸化物超電導体の薄膜
を基板上に作製する装置において、前記基板に高周波振
動を印加する高周波発生手段を具備することを特徴とす
る酸化物超電導薄膜を作製する装置が提供される。Further, in the present invention, as an apparatus for implementing the above method,
a chamber whose interior can be evacuated to a high vacuum; a gas supply means capable of introducing any gas into the chamber; a substrate holder that holds a substrate within the chamber; a heating means that heats the substrate; An apparatus for producing a thin film of an oxide superconductor on a substrate, the apparatus comprising an energy means for applying energy to a thin film raw material, the apparatus comprising: an energy means for applying energy to a thin film raw material; An apparatus for producing a superconducting thin film is provided.
一作Ｊ
本発明の方法は、酸化物超電導薄膜を基板上に形成する
場合に、基板温度を低くする代わりに基板に高周波振動
を与えて基板表面における反応に必要なエネルギを供給
し、結晶性のよい高品質な酸化物超電導薄膜を作製する
ところにその主要な特徴がある。Isaku J When forming an oxide superconducting thin film on a substrate, the method of the present invention applies high frequency vibration to the substrate instead of lowering the substrate temperature to supply the energy necessary for the reaction on the substrate surface, thereby increasing crystallinity. Its main feature is the production of high-quality oxide superconducting thin films.
本発明の方法に従えば、低い基板温度で酸化物超電導薄
膜が作製可能なので、半導体等の基板上にも高品質の酸
化物超電導薄膜を作製できる。According to the method of the present invention, since an oxide superconducting thin film can be produced at a low substrate temperature, a high quality oxide superconducting thin film can also be produced on a substrate such as a semiconductor.
本発明の方法で基板に与える上記高周波振動は、１０ｋ
Ｈｚ〜５ ＧＨｚが好ましい。上記高周波振動が、１Ｑ
ｋＨｚ未満ではその効果がなく、５ ＧＨｚを超える振
動を高周波振動を加えても、効果は変わらない。The above-mentioned high frequency vibration applied to the substrate by the method of the present invention is 10k
Hz to 5 GHz is preferred. The above high frequency vibration is 1Q
There is no effect below kHz, and even if high-frequency vibrations exceeding 5 GHz are applied, the effect remains the same.
本発明の装置は、上記の高周波振動を基板に印加する高
周波発生手段を具備する。高周波発生手段としては、例
えば圧電素子を使用することが可能である。高周波発生
手段に圧電素子を使用する場合には、基板から熱的に絶
縁して配置することが好ましい。The apparatus of the present invention includes high frequency generation means for applying the above-described high frequency vibration to the substrate. As the high frequency generating means, it is possible to use, for example, a piezoelectric element. When using a piezoelectric element as the high frequency generating means, it is preferable to arrange it thermally insulated from the substrate.
以下、本発明を実施例により、さらに詳しく説明するが
、以下の開示は本発明の単なる実施例に過ぎず、本発明
の技術的範囲をなんら制限するものではない。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
実施例 第１図に、本発明の装置の一例の概略図を示す。Example FIG. 1 shows a schematic diagram of an example of the apparatus of the present invention.
第１図の装置は、高周波（ＲＦ）スパッタリング装置で
あり、内部を高真空に排気可能なチャンバ１と、チャン
バ１内で基板２を保持する基板ホルダ３と、基板２に対
向して配置されたターゲット５と、基板２を加熱する赤
外線ランプ９と、ターゲット５に高周波電力を印加する
高周波電源６とを具備する。また、チャンバ１には、内
部に反応ガスを供給するパイプ８が設けられている。The apparatus shown in FIG. 1 is a radio frequency (RF) sputtering apparatus, and includes a chamber 1 whose interior can be evacuated to a high vacuum, a substrate holder 3 that holds a substrate 2 inside the chamber 1, and a substrate holder 3 placed opposite the substrate 2. The apparatus includes a target 5 , an infrared lamp 9 that heats the substrate 2 , and a high-frequency power source 6 that applies high-frequency power to the target 5 . Further, the chamber 1 is provided with a pipe 8 for supplying a reaction gas into the chamber.
基板ホルダ３には、基板２の熱が伝わらないように断熱
材７を介して圧電素子４が具備される。A piezoelectric element 4 is provided on the substrate holder 3 via a heat insulating material 7 so that the heat of the substrate 2 is not transferred.
圧電素子４により基板２に高周波振動が印加される。High frequency vibration is applied to the substrate 2 by the piezoelectric element 4 .
上記第１図の装置を使用して、本発明の方法でＹ ｌＢ
ａ２Ｃｕ＋ ０７−Ｘ酸化物超電導薄膜を作製した。タ
ーゲットにはＹ、ＢａおよびＣυを原子比１：２：３で
含む焼結体を用いた。典型的なスパッタ条件を以下に示
す。By the method of the present invention using the apparatus shown in FIG.
An a2Cu+ 07-X oxide superconducting thin film was fabricated. A sintered body containing Y, Ba, and Cυ in an atomic ratio of 1:2:3 was used as a target. Typical sputtering conditions are shown below.
基板
基板温度
ＲＦ電力密度
基板−ターゲット間距離
スパンクリングガス 八ｒ
圧力
印加振動周波数
膜厚
ｇ０
５００℃
２、５ Ｗ ／ ｃｔｌ
５ ｍｍ
８ＳＣＣ’、１
４ＳＣ口λ）
５ Ｘｌ０−２Ｔｏｒｒ
００ｋＨｚ
００ ｎｍ
また、第２図に基板温度、その温度で最適な印加振動周
波数および得られた薄膜のＴｃの関係をグラフで示す。Substrate substrate temperature RF power density Substrate-target distance Spankling gas 8r Pressure application vibration frequency Film thickness g0 500℃ 2,5 W/ctl 5 mm 8SCC', 1 4SC mouth λ) 5 Xl0-2Torr 00kHz 00 nm FIG. 2 is a graph showing the relationship between the substrate temperature, the optimum applied vibration frequency at that temperature, and the Tc of the obtained thin film.
尚、比較のために基板に高周波振動を印加しな□ハ従来
の方法により、他の条件を等しくして基板温度５００℃
てＹ、Ｂａ２Ｃｕ＋０７−Ｘ酸化物超電導４嘆を作製し
た。それぞれの方法；二より得られた薄膜ＯＴｃ、Ｊｃ
を測定した結果を以下に示す。For comparison, high-frequency vibration was not applied to the substrate. □C Using the conventional method, the substrate temperature was set to 500°C with other conditions being the same.
A Y, Ba2Cu+07-X oxide superconductor was fabricated. Each method; thin film OTc, Jc obtained from 2
The results of the measurements are shown below.
Ｔｃ （Ｋ） Ｊｃ（Ａ／’ｃｍ） （７７にで測
定）本発明 ８２ １６Ｘ１０’
従来法 ３４
本発明の方法で作製した薄膜は、外観上も平滑性が高く
、結晶性もより高い高品質な薄膜であっ発明の効果
以上膜すしたように本発明の方法に従うと、従来よりも
低い基板温度で高品質の酸化物薄膜を作製することが可
能である。これは、本発明の方法に独特な、基板に高周
波振動を印加しながら成膜を行うことの効果である。Tc (K) Jc (A/'cm) (Measured at 77) Present invention 82 16X10' Conventional method 34 The thin film produced by the method of the present invention has high quality with high smoothness in appearance and higher crystallinity. By following the method of the present invention, it is possible to produce a high quality oxide thin film at a lower substrate temperature than before. This is an effect unique to the method of the present invention in which film formation is performed while applying high frequency vibration to the substrate.
また、本発明の装置を使用すると上記の本発明の方法を
実現することが可能になる。Furthermore, the use of the device of the invention makes it possible to implement the method of the invention described above.
第１図は、本発明の装置の一例の概略図である。
第２図は、本発明の方法で基板に高周波振動を印加する
場合の基板温度、その温度で最適な印加振動周波数およ
び得られた薄膜のＴｃの関係のグラフである。
〔主な参照番号〕
１・・・チャンバ、 ２・・・基板、３・・・基板ホ
ルダ、４・・・圧電素子、５・ ・ ・ターゲット、
６・・・高周波電源、
７・・・断熱材、
８・・・ガス供給パイプ、
９・・・赤外線ランプ、
特許出願人 住友電気工業株式会社FIG. 1 is a schematic diagram of an example of the apparatus of the present invention. FIG. 2 is a graph of the relationship among the substrate temperature, the optimum applied vibration frequency at that temperature, and the Tc of the obtained thin film when high-frequency vibration is applied to the substrate by the method of the present invention. [Main reference numbers] 1... Chamber, 2... Substrate, 3... Substrate holder, 4... Piezoelectric element, 5... Target, 6... High frequency power supply, 7... Heat insulation Material, 8... Gas supply pipe, 9... Infrared lamp, Patent applicant Sumitomo Electric Industries, Ltd.
Claims (2)
に作製する方法において、前記基板に高周波振動を印加
しながら成膜を行うことを特徴とする酸化物超電導薄膜
の作製方法。(1) A method for producing an oxide superconductor thin film on a substrate by physical vapor deposition, the method comprising forming the film while applying high frequency vibration to the substrate.
バ内に任意のガスを導入できるガス供給手段と、前記チ
ャンバ内で基板を保持する基板ホルダと、前記基板を加
熱する加熱手段と、前記チャンバ内の薄膜原料にエネル
ギを印加するエネルギ手段とを具備し、酸化物超電導体
の薄膜を基板上に作製する装置において、前記基板に高
周波振動を印加する高周波発生手段を具備することを特
徴とする酸化物超電導薄膜を作製する装置。(2) a chamber whose interior can be evacuated to a high vacuum; a gas supply means capable of introducing any gas into the chamber; a substrate holder that holds a substrate within the chamber; and a heating means that heats the substrate; An apparatus for producing a thin film of an oxide superconductor on a substrate, comprising an energy means for applying energy to the thin film raw material in the chamber, characterized by comprising a high frequency generation means for applying high frequency vibration to the substrate. An apparatus for producing oxide superconducting thin films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2170991A JPH0459603A (en) | 1990-06-28 | 1990-06-28 | Production of high-quality oxide superconductor thin film and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2170991A JPH0459603A (en) | 1990-06-28 | 1990-06-28 | Production of high-quality oxide superconductor thin film and apparatus therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459603A true JPH0459603A (en) | 1992-02-26 |
Family
ID=15915096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2170991A Pending JPH0459603A (en) | 1990-06-28 | 1990-06-28 | Production of high-quality oxide superconductor thin film and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459603A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947049A (en) * | 2015-05-14 | 2015-09-30 | 宁波时代全芯科技有限公司 | Coating device |
| CN105195236A (en) * | 2015-09-25 | 2015-12-30 | 河海大学 | High pressure vibration film plating device for loading photocatalytic film on surface of porous ceramic material |
-
1990
- 1990-06-28 JP JP2170991A patent/JPH0459603A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947049A (en) * | 2015-05-14 | 2015-09-30 | 宁波时代全芯科技有限公司 | Coating device |
| CN105195236A (en) * | 2015-09-25 | 2015-12-30 | 河海大学 | High pressure vibration film plating device for loading photocatalytic film on surface of porous ceramic material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6074768A (en) | Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films | |
| JPH0354116A (en) | Compound oxide superconducting thin film and production thereof | |
| CN120556138A (en) | Two-dimensional antimony oxide film and its preparation method and application | |
| JP3214931B2 (en) | Polycrystalline silicon thin film and method for forming the same | |
| CN116988147A (en) | Silicon carbide crystal growth device and method with plasma electric field | |
| JPH03122266A (en) | Production of thin nitride film | |
| JPH02263789A (en) | Silicon substrate having diamond single crystalline film and its production | |
| JPH04187521A (en) | Preparation of oxide superconducting thin film | |
| JPH03203285A (en) | Manufacture of printed wiring board | |
| JPH0575191B2 (en) | ||
| JP3338906B2 (en) | Thin film formation method | |
| JPH02196099A (en) | Formation of thin superconductor film | |
| JPH02149402A (en) | Process and device for preparing oxide superconductor | |
| JPH0281421A (en) | Forming method for polycrystalline silicon film | |
| JP2828652B2 (en) | Superconducting element manufacturing method | |
| JPH01215963A (en) | Superconducting thin film formation method | |
| JP3068916B2 (en) | Manufacturing method of superconducting thin film | |
| Ushida et al. | Preparation of smooth A-axis oriented YBCO films using laser MOCVD | |
| JPH0726376A (en) | Thin film forming method and forming apparatus | |
| JPH01238111A (en) | Manufacture of silicon carbide semiconductor film | |
| JPH04354875A (en) | Formation of metal oxide thin film | |
| JPH04300270A (en) | Production of thin superconducting film | |
| JPH03271119A (en) | Production of high-temperature superconducting thin film of ybco-based oxide | |
| JPS61128519A (en) | Plasma cvd device | |
| JPH02199822A (en) | High-frequency cvd |