JPH0460354B2 - - Google Patents

Info

Publication number
JPH0460354B2
JPH0460354B2 JP57228606A JP22860682A JPH0460354B2 JP H0460354 B2 JPH0460354 B2 JP H0460354B2 JP 57228606 A JP57228606 A JP 57228606A JP 22860682 A JP22860682 A JP 22860682A JP H0460354 B2 JPH0460354 B2 JP H0460354B2
Authority
JP
Japan
Prior art keywords
layer
solar cell
thin film
film solar
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57228606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59124174A (ja
Inventor
Hisanori Mizuguchi
Katsuji Sato
Masanobu Izumina
Kazunaga Tsushimo
Yoshihisa Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP57228606A priority Critical patent/JPS59124174A/ja
Publication of JPS59124174A publication Critical patent/JPS59124174A/ja
Publication of JPH0460354B2 publication Critical patent/JPH0460354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57228606A 1982-12-29 1982-12-29 薄膜太陽電池 Granted JPS59124174A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57228606A JPS59124174A (ja) 1982-12-29 1982-12-29 薄膜太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57228606A JPS59124174A (ja) 1982-12-29 1982-12-29 薄膜太陽電池

Publications (2)

Publication Number Publication Date
JPS59124174A JPS59124174A (ja) 1984-07-18
JPH0460354B2 true JPH0460354B2 (mo) 1992-09-25

Family

ID=16878979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57228606A Granted JPS59124174A (ja) 1982-12-29 1982-12-29 薄膜太陽電池

Country Status (1)

Country Link
JP (1) JPS59124174A (mo)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473786A (zh) * 2009-07-22 2012-05-23 应用材料公司 使用背接触太阳能电池及金属带的单片电路模块装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953178B2 (ja) * 1980-12-19 1984-12-24 工業技術院長 非晶質薄膜太陽電池用ポリイミド基板及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473786A (zh) * 2009-07-22 2012-05-23 应用材料公司 使用背接触太阳能电池及金属带的单片电路模块装置

Also Published As

Publication number Publication date
JPS59124174A (ja) 1984-07-18

Similar Documents

Publication Publication Date Title
US4773942A (en) Flexible photovoltaic device
US4316049A (en) High voltage series connected tandem junction solar battery
EP0684652B1 (en) Photovoltaic element, electrode structure thereof, and process for producing the same
KR100334595B1 (ko) 광기전력소자의제조방법
JPH0685299A (ja) 太陽電池モジュール
JPH07106617A (ja) 透明電極及びその形成方法並びに該透明電極を用いた太陽電池
JPH0359588B2 (mo)
GB2060251A (en) Solar Battery
JPH06318724A (ja) 電極及び光起電力素子
JP3078936B2 (ja) 太陽電池
Roca et al. Process development of amorphous silicon/crystalline silicon solar cells
JPH06318723A (ja) 光起電力素子およびその作製方法
JPH0460354B2 (mo)
JP2680579B2 (ja) 光起電力装置
JPS58215083A (ja) ヘテロ接合光電素子及びヘテロ接合光電装置
JPH0481350B2 (mo)
JPH0129075B2 (mo)
EP0341756B1 (en) Flexible photovoltaic device
JPH0586677B2 (mo)
JPS6143869B2 (mo)
JPH077843B2 (ja) アモルフアス多元系半導体素子
JPH0597413A (ja) アモルフアス多元系半導体および該半導体を用いた素子
JPH06188443A (ja) 可撓性光起電力装置
Itozaki et al. Amorphous Silicon-Germanium Deposited by Photo-CVD
Uchida et al. Amorphous silicon photovoltaic modules