JPH0461390A - Optical transmission device - Google Patents

Optical transmission device

Info

Publication number
JPH0461390A
JPH0461390A JP2172204A JP17220490A JPH0461390A JP H0461390 A JPH0461390 A JP H0461390A JP 2172204 A JP2172204 A JP 2172204A JP 17220490 A JP17220490 A JP 17220490A JP H0461390 A JPH0461390 A JP H0461390A
Authority
JP
Japan
Prior art keywords
output
optical
modulator
circuit
optical modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2172204A
Other languages
Japanese (ja)
Other versions
JP2646808B2 (en
Inventor
Tetsuyuki Suzaki
哲行 洲崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2172204A priority Critical patent/JP2646808B2/en
Publication of JPH0461390A publication Critical patent/JPH0461390A/en
Application granted granted Critical
Publication of JP2646808B2 publication Critical patent/JP2646808B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To transmit signal light having strength stabilized for long time under simple device structure which is immune to the surrounding temperature by using the electric current which flows in proportion to optical power absorbed in an optical modulator and detecting the strength of optical power output from the optical modulator. CONSTITUTION:The voltage VP generated on both ends of a resistor 4 is proportional to optical power absorbed in a semiconductor optical modulator 2. The other output from a semiconductor laser 1 is input into an optical detector 3. The detector 3 is connected with a power source Vb by way of an electric current detection circuit 5. The output of the current detection circuit 5 is further input into a bias circuit 8 so that the output of the semiconductor laser 1 may be stabilized. The voltage VP is input into a comparator 7 on one side by way of an inductor 11 while the output of the current detector 5 is also input into a comparator 7 on the other side. It is possible to obtain the output voltage in proportion to the strength of signal light Oout from the output of the comparator 7 by adjusting the constant of each circuit. The bias voltage of a modulator drive circuit 6 is controlled by the application of an average circuit 20, thereby stabilizing the average strength of output light of an optical transmission device.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光送信装置に関し、特に高速デジタル光通信に
用いられる光送信装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical transmitter, and more particularly to an optical transmitter used in high-speed digital optical communications.

〔従来の技術〕[Conventional technology]

従来の光送信装置における外部光変調方式は、光フアイ
バ伝送時に分散劣化の要因となる波長スペクトルの拡が
りを抑圧する方法として非常に有効であり、その中でも
電界吸収型の半導体光変調器は高速動作が可能であるた
め、超高速光通信システムに適用が検討されている。第
5図にその従来例を示す、(”InGaAsP吸収型の
光変調素子を用いた2、4Gb/s5−1O0k光フア
イバ伝送実験゛、平成元年度電子情報通信学会春季全国
大会予講集) 従来例は、半導体レーザ1を常に一定の光強度で発光さ
せ、その光を光変調器2に入力し、光変調器2の吸収係
数を変化させることにより、光強度変調を行うものであ
る。光信号の波長スペクトル拡がりは、以前から行われ
ていた半導体レーザを直接変調する方式と比べ約5分の
1となり、それにより分散劣化で制限された情報の伝送
距離を約5倍増大させることが可能である。
The external optical modulation method used in conventional optical transmission equipment is extremely effective as a method of suppressing the broadening of the wavelength spectrum, which causes dispersion degradation during optical fiber transmission. Since this is possible, its application to ultra-high-speed optical communication systems is being considered. A conventional example is shown in Fig. 5 ("2,4 Gb/s 5-100k optical fiber transmission experiment using InGaAsP absorption type optical modulation element", Preliminary Lectures for the 1989 Institute of Electronics, Information and Communication Engineers Spring National Conference) Conventional In an example, a semiconductor laser 1 emits light at a constant light intensity, the light is input to an optical modulator 2, and the absorption coefficient of the optical modulator 2 is changed to perform optical intensity modulation. The wavelength spectrum spread of the signal is approximately one-fifth that of the previously used method of directly modulating a semiconductor laser, making it possible to increase the transmission distance of information, which was limited by dispersion degradation, by approximately five times. It is.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の光送信装置の外部変調方式においては、
光変調器からの出力光を検出するためにその出力光の一
部を分散しその光パワーを測定するという方法が採られ
ていた。そのため、光送信器からの出力光強度を損失し
、且つ強度を常に安定に保つよう制御するためには装置
の構成が複雑になるという欠点がある。
In the external modulation method of the conventional optical transmitter described above,
In order to detect the output light from an optical modulator, a method has been adopted in which a portion of the output light is dispersed and its optical power is measured. Therefore, there is a drawback that the output light intensity from the optical transmitter is lost and the configuration of the device becomes complicated in order to control the intensity to always keep it stable.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の光送信装置は、半導体レーザの放射光量に応じ
た第1の検出信号を出力する手段と、前記半導体レーザ
からの放射光を強度変調し信号光として出力する電界吸
収型の半導体光変調器と、前記第1の検出信号との比較
値により前記信号光の光強度に応じた第2の検出信号を
出力する手段とを有する。
The optical transmitter of the present invention includes means for outputting a first detection signal according to the amount of light emitted from the semiconductor laser, and an electro-absorption type semiconductor optical modulator that modulates the intensity of the light emitted from the semiconductor laser and outputs it as signal light. and means for outputting a second detection signal corresponding to the light intensity of the signal light based on a comparison value with the first detection signal.

〔作用〕[Effect]

本発明の送信装置は、電界吸収型半導体の光変調器を用
いて光の強度変調を行う際に、光変調器に吸収される光
パワーに比例した電流が流れることを用いて、光変調器
からの光出力の強度を検出する事に特徴がある。その動
作について第3図。
The transmitting device of the present invention utilizes the fact that when performing intensity modulation of light using an electro-absorption semiconductor optical modulator, a current flows that is proportional to the optical power absorbed by the optical modulator. The feature is that it detects the intensity of light output from. Fig. 3 shows its operation.

第4図を用いて説明する。This will be explained using FIG.

半導体レーザ1の一方の出力は光変調器2に、他方の出
力は光検出器3に入力される。ここで、光変調器2に駆
動電圧を印加する事により光の強度変調を行い、信号光
Poutを出力する。第4図(a)は変調器駆動電圧を
示すものであり、この駆動電圧に応じて、光変調器内部
の吸収率が変化するため、光変調器からの光出力強度は
、第4図(b)の様に変調される。このとき、光変調器
内部では光吸収量に比例して電流が発生するため、その
電流波形は、第4図(c)の様になる。
One output of the semiconductor laser 1 is input to an optical modulator 2, and the other output is input to a photodetector 3. Here, by applying a driving voltage to the optical modulator 2, the intensity of light is modulated and the signal light Pout is output. FIG. 4(a) shows the modulator driving voltage, and since the absorption rate inside the optical modulator changes according to this driving voltage, the optical output intensity from the optical modulator changes as shown in FIG. 4(a). It is modulated as shown in b). At this time, a current is generated inside the optical modulator in proportion to the amount of light absorbed, so the current waveform becomes as shown in FIG. 4(c).

ここで変調器に入力される光パワーをPo、光変調器駆
動電圧がVdの時の光変調器の吸収率をD、光変調器か
らの出力光の光パワーをそれぞれP、とすると、PI=
Po  (I  D>と表せる。
Here, if the optical power input to the modulator is Po, the absorption rate of the optical modulator when the optical modulator drive voltage is Vd is D, and the optical power of the output light from the optical modulator is P, then PI =
It can be expressed as Po (ID>).

このとき、光変調器に生じる1f流を工1とすると、そ
れはPoDに比例する事が知られている。
At this time, if the 1f current generated in the optical modulator is 1, it is known that it is proportional to PoD.

又一方で、半導体レーザの他方の放射端から光検出器3
に入射する光パワーをPO′とすると、POとPo′は
比例関係にある為、光検出器3に生じる電流工。はP。
On the other hand, a photodetector 3 is connected from the other emission end of the semiconductor laser.
If the optical power incident on the photodetector 3 is PO', since PO and Po' are in a proportional relationship, current flow occurs in the photodetector 3. is P.

に比例する。よって、光変調器からの出力光の強度Pが
■1とIOの差として表せるよう、各比例定数を決定す
ることにより、光変調器からの出力光強度が検出可能で
ある。
is proportional to. Therefore, by determining each proportionality constant so that the intensity P of the output light from the optical modulator can be expressed as the difference between 1 and IO, the intensity of the output light from the optical modulator can be detected.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例のブロック図である。FIG. 1 is a block diagram of a first embodiment of the present invention.

半導体レーザlにバイアス回路8から電流を供給するこ
とにより発光させ、半導体レーザlの出力光の一方を電
界吸収型の半導体光変調器2に入力する。半導体光変調
器2の一方の端子は変調器駆動回路6の出力に接続され
、他方の端子は抵抗4を介してグランドに接続される。
The semiconductor laser 1 is caused to emit light by supplying a current from the bias circuit 8, and one of the output lights of the semiconductor laser 1 is input to the electro-absorption type semiconductor optical modulator 2. One terminal of the semiconductor optical modulator 2 is connected to the output of a modulator drive circuit 6, and the other terminal is connected to ground via a resistor 4.

半導体光変調器2は変調器駆動回路6からの変調電圧に
より導波路部での吸収率が変化して変調された光信号P
outを出力する。ここで、抵抗4の両端に生じる電圧
Vpは、半導体光変調器2に吸収される光パワーに比例
する。又、変調器駆動回路6の出力とグランドの間には
、インピーダンスダンス整合のための抵抗10が接続さ
れている。半導体レーザ1からの他方の出力は光検出器
3に入力され、この光検出器3は電流検出器F#I5を
介して電源vbに接続される。更に、電流検出回路5の
出力はバイアス回路8に入力され、半導体レーザ1の出
力は安定化する。を圧Vpはインダクタ11を介して比
較器7の一方に入力される。また、電流検出器5の出力
も比較器7の他方に入力し、各回路の定数を調節するこ
とにより、比較器7の出力から信号光Poutの強度に
比例した出力電圧を得る。この比較器7の出力に平均北
回n20を接続し、その平均化回路20の出力を用いて
変調器駆動回路6のバイアス電圧を制御し、光送信装置
の出力光の平均強度の安定化を行う。
The semiconductor optical modulator 2 generates an optical signal P which is modulated by changing the absorption rate in the waveguide section by the modulation voltage from the modulator drive circuit 6.
Output out. Here, the voltage Vp generated across the resistor 4 is proportional to the optical power absorbed by the semiconductor optical modulator 2. Further, a resistor 10 for impedance matching is connected between the output of the modulator drive circuit 6 and the ground. The other output from the semiconductor laser 1 is input to a photodetector 3, which is connected to a power supply vb via a current detector F#I5. Further, the output of the current detection circuit 5 is input to the bias circuit 8, and the output of the semiconductor laser 1 is stabilized. The pressure Vp is input to one side of the comparator 7 via the inductor 11. The output of the current detector 5 is also input to the other comparator 7, and by adjusting the constants of each circuit, an output voltage proportional to the intensity of the signal light Pout is obtained from the output of the comparator 7. An average north circuit n20 is connected to the output of this comparator 7, and the output of the averaging circuit 20 is used to control the bias voltage of the modulator drive circuit 6, thereby stabilizing the average intensity of the output light of the optical transmitter. conduct.

本実施例を用いることによって、半導体レーザあるいは
電界吸収型の半導体光変調器の温度変化などによる出力
強度変動が従来の約10分の1となり、2.4Gb/s
で1100k伝送実験においても10時間にわたって符
号誤りの無い安定した動作を実現した。
By using this embodiment, the output intensity fluctuation due to temperature changes of the semiconductor laser or electro-absorption type semiconductor optical modulator is reduced to about one-tenth of that of the conventional one, and the output intensity is 2.4 Gb/s.
In a 1100K transmission experiment, stable operation with no code errors was achieved for 10 hours.

次に、本発明の第2の実施例を第2図により説明する0
本実施例においては半導体レーザ1、半導体光変調器2
及び光検出器3をモノリシック集積した素子を用いであ
ることが特徴である。このモノリシック集積素子内の光
学素子の接続は第1の実施例と同様である。但し、これ
ら光学素子の片側の電極は共通であるため、電界吸収型
の半導体光変調器2に流れる電流を検出するための抵抗
4は、半導体光変調器2と変調器駆動回路6との間に接
続される。この抵抗4の両端をインダクタ11.12を
介して差動増幅器21に接続し、半導体光変調器2に生
じる光電流を検出する。これら以外の回路の構成、接続
は第1の実施例と同様である。
Next, a second embodiment of the present invention will be explained with reference to FIG.
In this embodiment, a semiconductor laser 1, a semiconductor optical modulator 2
The device is characterized by the use of a monolithically integrated device including the photodetector 3 and the photodetector 3. The connections of the optical elements within this monolithic integrated element are similar to the first embodiment. However, since the electrodes on one side of these optical elements are common, the resistor 4 for detecting the current flowing through the electroabsorption type semiconductor optical modulator 2 is connected between the semiconductor optical modulator 2 and the modulator drive circuit 6. connected to. Both ends of this resistor 4 are connected to a differential amplifier 21 via inductors 11 and 12, and a photocurrent generated in the semiconductor optical modulator 2 is detected. The configuration and connections of the circuits other than these are the same as in the first embodiment.

本実施例を用いることによって、第1の実施例において
問題であった、半導体レーザ1と半導体光変調器2の間
に生じる光結合損失が約5dB低減でき、2.4Gb/
sで120km伝送において10時間にわたる、符号誤
りのない動作を実現した。
By using this embodiment, the optical coupling loss occurring between the semiconductor laser 1 and the semiconductor optical modulator 2, which was a problem in the first embodiment, can be reduced by about 5 dB, and the
We achieved 10 hours of operation without code errors in 120 km transmission over 100 ms.

なお、本発明の光送信装置の実施例として、2つの例を
挙げて説明したが、それ以外にも様々な態様が実現でき
る0例えば、半導体光変調器に接続する第1の電流検出
器は、第1、第2の実施例とも半導体光変調器と変調器
駆動回路との間に挿入したが、これは例えば半導体光変
調器とグランドの間などのように、半導体光変調器に吸
収される光パワーに比例する量が検出されるならば、ど
こに挿入してもよい、又、本実施例としては電流検出器
を用いて説明したが、これは抵抗とその両端の電位差を
測定することによって容易に実現可能である。更に、本
説明における比較器は、2つの入力の差を検出できるど
の様な電子回路を用いて実現可能である。
Although two examples have been described as embodiments of the optical transmitter of the present invention, various other embodiments can be realized.For example, the first current detector connected to the semiconductor optical modulator may be , is inserted between the semiconductor optical modulator and the modulator drive circuit in both the first and second embodiments, but this is inserted between the semiconductor optical modulator and the ground, etc. It can be inserted anywhere as long as an amount proportional to the optical power of This can be easily realized by Furthermore, the comparator in this description can be implemented using any electronic circuit that is capable of detecting a difference between two inputs.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、電界吸収型の半導
体変調器から出力される信号光の強度を制御することに
より、簡単な装置構成で周囲温度に影響されず、長期的
な安定した強度の信号光を送信できるという効果がある
。
As explained above, according to the present invention, by controlling the intensity of signal light output from an electro-absorption semiconductor modulator, stable intensity can be achieved over a long period of time without being affected by ambient temperature with a simple device configuration. This has the effect of being able to transmit signal light.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例を示すブロック図、第2
図は本発明の第2の実施例を示す構成図、第3図は本実
施例の光出力検出方法の構成を示した図、第4図は本実
施例の光出力検出方法を説明するための図、第5図は従
来例の光送信装置の一例のブロック図である。 1・・・半導体レーザ、2・・・電光吸収型の半導体光
変調器、3・・・光検出器、4,10・・・抵抗、6・
・・変調器駆動回路、7・・・比較器、8・・・バイア
ス回路、11.12・・・インダクタ、20・・・平均
化回路、21・・・差動増幅器。
FIG. 1 is a block diagram showing a first embodiment of the present invention;
The figure is a block diagram showing the second embodiment of the present invention, FIG. 3 is a diagram showing the structure of the light output detection method of this embodiment, and FIG. 4 is for explaining the light output detection method of this embodiment. FIG. 5 is a block diagram of an example of a conventional optical transmitter. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Lightning absorption type semiconductor optical modulator, 3... Photodetector, 4, 10... Resistor, 6...
...Modulator drive circuit, 7...Comparator, 8...Bias circuit, 11.12...Inductor, 20...Averaging circuit, 21...Differential amplifier.

Claims (1)

【特許請求の範囲】 1、半導体レーザの放射光量に応じた第1の検出信号を
出力する手段と、前記半導体レーザからの放射光を強度
変調し信号光として出力する電界吸収型の半導体光変調
器と、前記第1の検出信号との比較値により前記信号光
の光強度に応じた第2の検出信号を出力する手段とを有
することを特徴とする光送信装置。 2、前記第1と第2の検出信号の比較出力により前記半
導体光変調器の出力を制御することを特徴とする請求項
1記載の光送信装置。
[Scope of Claims] 1. Means for outputting a first detection signal according to the amount of light emitted from the semiconductor laser, and electro-absorption type semiconductor optical modulation that modulates the intensity of the light emitted from the semiconductor laser and outputs it as signal light. 1. An optical transmitter comprising: a detector; and means for outputting a second detection signal corresponding to the optical intensity of the signal light based on a comparison value with the first detection signal. 2. The optical transmitter according to claim 1, wherein the output of the semiconductor optical modulator is controlled by a comparison output of the first and second detection signals.
JP2172204A 1990-06-29 1990-06-29 Optical transmitter Expired - Lifetime JP2646808B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2172204A JP2646808B2 (en) 1990-06-29 1990-06-29 Optical transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2172204A JP2646808B2 (en) 1990-06-29 1990-06-29 Optical transmitter

Publications (2)

Publication Number Publication Date
JPH0461390A true JPH0461390A (en) 1992-02-27
JP2646808B2 JP2646808B2 (en) 1997-08-27

Family

ID=15937518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2172204A Expired - Lifetime JP2646808B2 (en) 1990-06-29 1990-06-29 Optical transmitter

Country Status (1)

Country Link
JP (1) JP2646808B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969819A (en) * 1995-08-30 1997-03-11 Nec Corp Optical transmitter
JPH11119176A (en) * 1997-10-20 1999-04-30 Fujitsu Ltd Driving circuit for electroabsorption optical modulator and optical transmitter using the same
JP2000124541A (en) * 1998-10-21 2000-04-28 Hitachi Ltd Semiconductor laser and semiconductor laser module
WO2003075422A1 (en) * 2002-03-05 2003-09-12 Mitsubishi Denki Kabushiki Kaisha Optical transmitter and optical module
JP2008078353A (en) * 2006-09-21 2008-04-03 Oki Electric Ind Co Ltd Optical transmitting device
JP2012141335A (en) * 2010-12-28 2012-07-26 Mitsubishi Electric Corp Non-cooled optical semiconductor device
JP2016180779A (en) * 2015-03-23 2016-10-13 日本電信電話株式会社 Optical circuit
WO2020065822A1 (en) * 2018-09-27 2020-04-02 三菱電機株式会社 Light transmission module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613485A (en) * 1984-06-18 1986-01-09 Univ Tohoku Laser functional device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613485A (en) * 1984-06-18 1986-01-09 Univ Tohoku Laser functional device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969819A (en) * 1995-08-30 1997-03-11 Nec Corp Optical transmitter
JPH11119176A (en) * 1997-10-20 1999-04-30 Fujitsu Ltd Driving circuit for electroabsorption optical modulator and optical transmitter using the same
JP2000124541A (en) * 1998-10-21 2000-04-28 Hitachi Ltd Semiconductor laser and semiconductor laser module
WO2003075422A1 (en) * 2002-03-05 2003-09-12 Mitsubishi Denki Kabushiki Kaisha Optical transmitter and optical module
EP1482610A4 (en) * 2002-03-05 2007-01-03 Mitsubishi Electric Corp OPTICAL TRANSMITTER AND OPTICAL MODULE
JP2008078353A (en) * 2006-09-21 2008-04-03 Oki Electric Ind Co Ltd Optical transmitting device
JP2012141335A (en) * 2010-12-28 2012-07-26 Mitsubishi Electric Corp Non-cooled optical semiconductor device
JP2016180779A (en) * 2015-03-23 2016-10-13 日本電信電話株式会社 Optical circuit
WO2020065822A1 (en) * 2018-09-27 2020-04-02 三菱電機株式会社 Light transmission module

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JP2646808B2 (en) 1997-08-27

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