JPH0462484B2 - - Google Patents
Info
- Publication number
- JPH0462484B2 JPH0462484B2 JP59132316A JP13231684A JPH0462484B2 JP H0462484 B2 JPH0462484 B2 JP H0462484B2 JP 59132316 A JP59132316 A JP 59132316A JP 13231684 A JP13231684 A JP 13231684A JP H0462484 B2 JPH0462484 B2 JP H0462484B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- current
- potential supply
- supply source
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 43
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、発振周波数を電流または電圧によ
り制御し得るLC発振回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an LC oscillation circuit whose oscillation frequency can be controlled by current or voltage.
一般に、例えばPLL（位相同期制御）回路や受
信機の局部発振回路等の電子回路に集積回路（以
下ICと称す）化して用いられるLC発振回路は、
第５図に示すように差動型で構成されている。す
なわち、このLC発振回路では、電源１１を投入
して電流源１２に電流を供給すると、この電流は
トランジスタ１３，１４よりなるカレントミラー
回路へ入力され、トランジスタ１４のコレクタ電
流に変換されてトランジスタ１５，１６、コンデ
ンサ１７及びコイル１８よりなる差動発振回路の
共通エミツタ部へ出力される。
In general, LC oscillation circuits are used as integrated circuits (hereinafter referred to as ICs) in electronic circuits such as PLL (phase-locked control) circuits and receiver local oscillation circuits.
As shown in FIG. 5, it is constructed of a differential type. That is, in this LC oscillation circuit, when the power supply 11 is turned on and a current is supplied to the current source 12, this current is input to the current mirror circuit consisting of transistors 13 and 14, is converted to the collector current of the transistor 14, and is converted to the collector current of the transistor 15. , 16, a capacitor 17, and a coil 18.
つまり、上記差動発振回路では、トランジスタ
１５，１６が飽和領域に入らない状態で動作して
いるとき、発振周波数foscは、トランジスタ１
５，１６の寄生容量及び帰還容量を無視できると
すれば、
fosc＝１／2π√LC
Ｃ：コンデンサ１７の容量、Ｌ；コイル１８の
インダクタンス）
で表わせる。 In other words, in the differential oscillation circuit described above, when transistors 15 and 16 are operating in a state where they do not enter the saturation region, the oscillation frequency fosc is
If the parasitic capacitance and feedback capacitance of 5 and 16 can be ignored, it can be expressed as fosc=1/2π√LC (C: capacitance of capacitor 17, L: inductance of coil 18).
ところが、トランジスタ１６が飽和領域に入つ
て動作すると、トランジスタ１６のベース・コレ
クタ間が順方向にバイアスされ、ベース・コレク
タ間の等価的な（帰還）容量が逆方向バイアス時
よりも極端に増大し、発振周波数foscが上記計算
値よりも低くなつてくる。例えば、上記電源１１
の電圧を５〔Ｖ〕、コンデンサ１７の容量Ｃを190
〔PF〕、コイル１８のインダクタンスＬを560
〔μH〕とし、電流源１２の電流量を変化させてト
ランジスタ１４のコレクタ電流（制御電流Ｉ）を
変化さたときの発振周波数foscを測定すると、第
６図に示すようになる。 However, when the transistor 16 operates in the saturation region, the base-collector of the transistor 16 is biased in the forward direction, and the equivalent (feedback) capacitance between the base and collector increases significantly compared to when it is reverse-biased. , the oscillation frequency fosc becomes lower than the above calculated value. For example, the power supply 11
The voltage of is 5 [V], and the capacitance C of capacitor 17 is 190
[PF], inductance L of coil 18 is 560
[μH], and the oscillation frequency fosc is measured when the collector current (control current I) of the transistor 14 is changed by changing the current amount of the current source 12, as shown in FIG.
つまり、この第６図から、コンデンサ１７及び
コイル１８よりなるLC並列共振負荷のＱが低い
ときには、トランジスタ１６が飽和領域に入らな
いため発振周波数foscは40〜140〔μA〕までほと
んど変化しないが、上記並列共振負荷のＱが高い
場合には、制御電流Ｉの増加に応じて上記並列共
振負荷の両端に現われる信号振が幅増加し、これ
によつてトランジスタ１６が飽和領域に入るため
発振周波数foscが低下することがわかる。つま
り、上記LC並列共振負荷のＱを高く設定するこ
とにより電流制御型のLC発振回路を構成するこ
とができる。 In other words, from FIG. 6, when the Q of the LC parallel resonant load consisting of the capacitor 17 and the coil 18 is low, the oscillation frequency fosc hardly changes from 40 to 140 [μA] because the transistor 16 does not enter the saturation region. When the Q of the parallel resonant load is high, the signal amplitude appearing across the parallel resonant load increases in width as the control current I increases, and as a result, the transistor 16 enters the saturation region, so the oscillation frequency fosc It can be seen that this decreases. That is, by setting the Q of the LC parallel resonant load to be high, a current-controlled LC oscillation circuit can be constructed.
しかしながら、上記のような従来のLC発振回
路では、LC並列共振負荷をIC化した場合にその
Ｑがばらつきやすいため、上述したようにＱのば
らつきに応じて発振周波数foscの特性もばらつい
てしまつていた。 However, in the conventional LC oscillation circuit as described above, when the LC parallel resonant load is integrated into an IC, its Q tends to vary, so as mentioned above, the characteristics of the oscillation frequency fosc also vary depending on the variation in Q. was.
この発明は上記のような問題を改善するために
なされたもので、LC共振負荷のＱのばらつきに
対し、発振周波数の特性変化を少なくし得るLC
発振回路を提供することを目的とする。
This invention was made in order to improve the above-mentioned problems.
The purpose is to provide an oscillation circuit.
すなわち、この発明に係るLC発振回路は、一
対のトランジスタよりなる差動回路と、この差動
回路に流れる電流量を制御する電流源と、前記一
対のトランジスタの一方のトランジスタの電流供
給路に介在されコンデンサ及びコイルよりなる
LC共振負荷と、前記一対のトランジスタの他方
のトランジスタの電流供給路に介在され該他方の
トランジスタを制御範囲で飽和状態で動作させる
ダイオードとを具備してなることを特徴とするも
のである。
That is, the LC oscillation circuit according to the present invention includes a differential circuit including a pair of transistors, a current source that controls the amount of current flowing through the differential circuit, and a current supply path of one transistor of the pair of transistors. Consists of a capacitor and a coil
It is characterized by comprising an LC resonant load and a diode that is interposed in the current supply path of the other transistor of the pair of transistors and operates the other transistor in a saturated state within a control range.
以下、第１図乃至第２図を参照してこの発明の
一実施例を説明する。但し、第１図において第５
図と同一部分には同一符号を付して示し、ここで
は異なる部分についてのみ述べる。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. However, in Figure 1,
The same parts as those in the figures are indicated by the same reference numerals, and only the different parts will be described here.
第１図はその構成を示すもので、前記電源１１
の正電極側の基準電位点及びトランジスタ１５の
コレクタ間にダイオード１９を介在させたもので
ある。 FIG. 1 shows its configuration, in which the power source 11
A diode 19 is interposed between the reference potential point on the positive electrode side of the transistor 15 and the collector of the transistor 15.
つまり、このLC発振回路は、ダイオード１９
によりトランジスタ１５を制御電流Ｉの制御範囲
で飽和領域に入るようにしたもので、この場合、
上記ダイオード１９の電圧容量VFは、トランジ
スタ１５のベース・エミツタ間電圧VBEより小さ
く設定する。これは、VFがVBEに近づくほどト
ランジスタ１５の飽和の度合いが大きくなり、こ
れによつて発振周波数foscの変化を大きくするこ
とができるからである。但し、あまり近づきすぎ
るとトランジスタ１５が完全に飽和してしまい、
発振停止状態に至ることになる。 In other words, this LC oscillation circuit has a diode 19
In this case, the transistor 15 is set to enter the saturation region within the control range of the control current I.
The voltage capacity VF of the diode 19 is set smaller than the base-emitter voltage VBE of the transistor 15. This is because as VF approaches VBE , the degree of saturation of the transistor 15 increases, thereby making it possible to increase the change in the oscillation frequency fosc. However, if you get too close, the transistor 15 will be completely saturated,
This will lead to an oscillation stop state.
第２図は、第６図に示した場合と同様に、上記
電源１１の電圧を５〔Ｖ〕、コンデンサ１７の容量
Ｃを190〔PF〕、コイル１８のインダクタンスＬを
560〔μH〕とし、電流源１２の電流量を変化させ
てトランジスタ１４のコレクタ電流（制御電流
Ｉ）を変化させたときの発振周波数foscを測定し
た結果を示すものである。この第２図から、この
LC発振回路は、従来のものに比してLC並列共振
負荷のＱのばらつきに対する発振周波数foscの特
性変化が少ないことがわかる。また、制御電流Ｉ
の変化に対して、LC並列共振負荷のＱが変わつ
ても、発振周波数foscが直線的に変化しているこ
とがわかる。 In FIG. 2, as in the case shown in FIG. 6, the voltage of the power supply 11 is 5 [V], the capacitance C of the capacitor 17 is 190 [PF], and the inductance L of the coil 18 is
560 [μH], and shows the results of measuring the oscillation frequency fosc when the collector current (control current I) of the transistor 14 was changed by changing the amount of current of the current source 12. From this second figure, this
It can be seen that the LC oscillation circuit has less characteristic change in the oscillation frequency fosc with respect to variations in the Q of the LC parallel resonant load than the conventional one. Also, the control current I
It can be seen that the oscillation frequency fosc changes linearly even if the Q of the LC parallel resonant load changes.
したがつて、上記のように構成したLC発振回
路は、LC共振負荷のＱのばらつきに対して発振
周波数の特性変化を少なくすることができるもの
である。 Therefore, the LC oscillation circuit configured as described above can reduce changes in the oscillation frequency characteristics with respect to variations in the Q of the LC resonant load.
第３図はこの発明に係る他の実施例を示すもの
で、差動発振回路のトランジスタ２０，２１が第
１図に示した実施例のトランジスタ１５，１６に
対して逆極性の場合を示している。尚、電流源２
２は前記電流源１２及びトランジスタ１３，１４
よりなる電流源と等価である。このLC発振回路
の動作は前記実施例と同様であるのでその説明は
省略する。 FIG. 3 shows another embodiment according to the present invention, in which the transistors 20 and 21 of the differential oscillation circuit have opposite polarity to the transistors 15 and 16 of the embodiment shown in FIG. There is. In addition, current source 2
2 is the current source 12 and transistors 13 and 14;
It is equivalent to a current source consisting of The operation of this LC oscillation circuit is similar to that of the previous embodiment, so its explanation will be omitted.
第４図は第１図に示したLC発振回路２３を
PLLマルチプレクサ回路に応用した場合の構成
を示すもので、前記トランジスタ１６のコレクタ
から発振信号を取出し、抵抗R1〜R3、トランジ
スタQ1〜Q4、ダイオードD1，D2及び電流源I1よ
りなる増幅回路２４より上記発振信号を増幅し、
出力端子２５を介してI2L分周回路２６に供給す
るようになされている。つまり、このPLLマル
チプレクサ回路はIC化が容易であり、LC発振回
路の発振周波数foscの特性変化が少ないため、極
めて精度の良いものとなる。 Figure 4 shows the LC oscillation circuit 23 shown in Figure 1.
This shows the configuration when applied to a PLL multiplexer circuit, in which an oscillation signal is taken out from the collector of the transistor 16, and resistors R 1 to R 3 , transistors Q 1 to Q 4 , diodes D 1 and D 2 and current source I 1 The oscillation signal is amplified by an amplifier circuit 24 consisting of
The signal is supplied to an I 2 L frequency dividing circuit 26 via an output terminal 25. In other words, this PLL multiplexer circuit can be easily integrated into an IC, and since there is little change in the characteristics of the oscillation frequency fosc of the LC oscillation circuit, it has extremely high accuracy.
このように、この発明に係るLC発振回路は、
種々の電子回路に応用可能なものである。 In this way, the LC oscillation circuit according to the present invention
It can be applied to various electronic circuits.
以上のようにこの発明によれば、LC共振負荷
のＱのばらつきに対し、発振周波数の特性変化を
少なくし得るLC発振回路を提供することができ
る。
As described above, according to the present invention, it is possible to provide an LC oscillation circuit that can reduce changes in oscillation frequency characteristics due to variations in Q of an LC resonant load.
第１図はこの発明に係るLC発振回路の一実施
例を示す回路図、第２図は同実施例の制御電流に
対する発振周波数の特性を示す特性図、第３図及
び第４図はそれぞれこの発明に係る他の実施例を
示す回路図、第５図は従来のLC発振回路の構成
を示す回路図、第６図は上記LC発振回路の周波
数特性を示す特性図である。
１１……電源、１２……電流源、１３〜１６…
…トランジスタ、１７……コンデンサ、１８……
コイル、１９……ダイオード、Ｉ……制御電流。
Fig. 1 is a circuit diagram showing an embodiment of the LC oscillation circuit according to the present invention, Fig. 2 is a characteristic diagram showing the characteristics of the oscillation frequency with respect to the control current of the same embodiment, and Figs. FIG. 5 is a circuit diagram showing the configuration of a conventional LC oscillation circuit, and FIG. 6 is a characteristic diagram showing the frequency characteristics of the LC oscillation circuit. 11...Power supply, 12...Current source, 13-16...
...Transistor, 17...Capacitor, 18...
Coil, 19...diode, I...control current.
Claims (1)
供給源に接続された第２のトランジスタと、前記
第１および第２のトランジスタのエミツタと第２
の電位供給源との間に接続された電流源と、互い
に並列に接続されたコンデンサおよびコイルから
構成され、その一端が前記第１のトランジスタの
ベースおよび前記第２のトランジスタのコレクタ
に接続され、その他端が前記第１の電位供給源に
接続されたLC共振負荷と、アノードが前記第１
の電位供給源に接続され、カソードが前記第１の
トランジスタのコレクタに接続されたダイオード
とを具備し、前記電流源の電流量を変えることに
よつて発振周波数を変化させることを特徴とする
LC発振回路。 ２ 第１のトランジスタと、ベースが第１の電位
供給源に接続された第２のトランジスタと、前記
第１および第２のトランジスタのエミツタと前記
第１の電位供給源との間に接続された電流源と、
互いに並列に接続されたコンデンサおよびコイル
から構成され、その一端が前記第１のトランジス
タのベースおよび前記第２のトランジスタのコレ
クタに接続され、その他端が第２の電位供給源に
接続されたLC共振負荷と、アノードが前記第１
のトランジスタのコレクタに接続され、カソード
が前記第２の電位供給源に接続されたダイオード
とを具備し、前記電流源の電流量を変えることに
よつて発振周波数を変化させることを特徴とする
LC発振回路。[Scope of Claims] 1. A first transistor, a second transistor whose base is connected to a first potential supply source, and emitters of the first and second transistors and a second transistor whose base is connected to the first potential supply source.
a current source connected between a potential supply source and a capacitor and a coil connected in parallel with each other, one end of which is connected to the base of the first transistor and the collector of the second transistor, an LC resonant load whose other end is connected to the first potential supply source; and an anode connected to the first potential supply source.
and a diode connected to the potential supply source of the first transistor, the cathode of which is connected to the collector of the first transistor, and the oscillation frequency is changed by changing the amount of current of the current source.
LC oscillation circuit. 2 a first transistor, a second transistor whose base is connected to the first potential supply source, and a second transistor connected between the emitters of the first and second transistors and the first potential supply source; a current source;
LC resonance consisting of a capacitor and a coil connected in parallel with each other, one end of which is connected to the base of the first transistor and the collector of the second transistor, and the other end of which is connected to a second potential supply source. a load and an anode connected to the first
and a diode connected to the collector of the transistor, the cathode of which is connected to the second potential supply source, and the oscillation frequency is changed by changing the amount of current of the current source.
LC oscillation circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132316A JPS6112105A (en) | 1984-06-27 | 1984-06-27 | Lc oscillation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132316A JPS6112105A (en) | 1984-06-27 | 1984-06-27 | Lc oscillation circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6112105A JPS6112105A (en) | 1986-01-20 |
| JPH0462484B2 true JPH0462484B2 (en) | 1992-10-06 |
Family
ID=15078461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59132316A Granted JPS6112105A (en) | 1984-06-27 | 1984-06-27 | Lc oscillation circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6112105A (en) |
-
1984
- 1984-06-27 JP JP59132316A patent/JPS6112105A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6112105A (en) | 1986-01-20 |
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| JP2602327B2 (en) | Oscillation circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |