JPH0463040B2 - - Google Patents

Info

Publication number
JPH0463040B2
JPH0463040B2 JP59224956A JP22495684A JPH0463040B2 JP H0463040 B2 JPH0463040 B2 JP H0463040B2 JP 59224956 A JP59224956 A JP 59224956A JP 22495684 A JP22495684 A JP 22495684A JP H0463040 B2 JPH0463040 B2 JP H0463040B2
Authority
JP
Japan
Prior art keywords
layer
gaas
epitaxial
substrate
mixed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59224956A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61106497A (ja
Inventor
Masahisa Endo
Nobuhiko Noto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP59224956A priority Critical patent/JPS61106497A/ja
Publication of JPS61106497A publication Critical patent/JPS61106497A/ja
Publication of JPH0463040B2 publication Critical patent/JPH0463040B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP59224956A 1984-10-25 1984-10-25 燐化砒化ガリウムエピタキシヤル膜の成長方法 Granted JPS61106497A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59224956A JPS61106497A (ja) 1984-10-25 1984-10-25 燐化砒化ガリウムエピタキシヤル膜の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59224956A JPS61106497A (ja) 1984-10-25 1984-10-25 燐化砒化ガリウムエピタキシヤル膜の成長方法

Publications (2)

Publication Number Publication Date
JPS61106497A JPS61106497A (ja) 1986-05-24
JPH0463040B2 true JPH0463040B2 (de) 1992-10-08

Family

ID=16821823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59224956A Granted JPS61106497A (ja) 1984-10-25 1984-10-25 燐化砒化ガリウムエピタキシヤル膜の成長方法

Country Status (1)

Country Link
JP (1) JPS61106497A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792817B2 (ja) * 1997-01-06 2006-07-05 信越半導体株式会社 ＧａＡｓＰエピタキシャルウェーハ及びその製造方法
US7928424B2 (en) 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US10483306B2 (en) * 2016-03-30 2019-11-19 Sony Corporation Photoelectric conversion element and photoelectric conversion device

Also Published As

Publication number Publication date
JPS61106497A (ja) 1986-05-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees