JPH0463284A - Microwave plasma CVD equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an improved microwave plasma CVD apparatus. More particularly, the present invention relates to an improved microwave plasma CVD apparatus particularly suitable for forming deposited films.

[Description of prior art]

The plasma CVD method is a method in which a specific substance is turned into plasma to form highly active radicals, and these radicals are brought into contact with a substrate to form a deposited film on the substrate.
The VD device refers to a device used to carry out the plasma CVD method.

Conventionally, such a plasma CVD apparatus has a plasma CVD system formed in a vacuum container having a raw material gas inlet and an exhaust port.
It consists of a D chamber and a device that supplies t-magnetic waves and the like that supply energy to turn the raw material gas supplied to the plasma CVD chamber into plasma.

By the way, the plasma CVD method relies on the strong activity of the radicals mentioned above, and the desired deposited film can be formed by appropriately selecting the density of the radicals, the temperature of the object to be processed, etc. What matters is the efficient generation of radicals.

Conventionally, as a medium for providing plasma chemical processing fulgy, 1
A high frequency of about 3.56 MHz was used, but in recent years, by using microwaves of about 2.45 GH2, high-density plasma can be efficiently generated and the object to be processed can be heated at the same time. It turns out that
Plasma CVD methods using microwaves have attracted attention, and several apparatuses have been proposed for this purpose.

For example, amorphous silicon (hereinafter referred to as rA-3iJ) is used as an element member for semiconductor devices, electrophotographic photoresists, image sensors, imaging devices, photovoltaic devices, various other electronic devices, optical devices, etc. , ), polysilicon (referred to as rp-3iJ), or 5iO2SiN, etc., using a plasma CVD method using microwaves (hereinafter referred to as rMW-PCVD method).
) and an apparatus therefor have been proposed.

By the way, such conventional MW-PCVD equipment has the following two
It can be roughly divided into two types.

That is, one type is the Japanese Patent Publication No. 58-49295, the Japanese Patent Publication No. 43991-1983, and the Japanese Utility Model Publication No. 62-36.
This is of the type seen in Japanese Patent No. 240, etc., in which a gas pipe is inserted into or brought into contact with a rectangular or coaxial waveguide to generate plasma. [Hereinafter, this method will be referred to as "method IMW-PCVD apparatus." ] The other type is the type seen in Japanese Patent Application Laid-Open No. 57-133636, etc., which induces electron cyclotron resonance (ECR) in a cavity resonator and draws out plasma using a diverging magnetic field. It is. [Hereinafter, this method will be referred to as "Method 2MW PCVD apparatus."] As for the IMW-PCVD apparatus of the method, the one shown in FIG. ).

3rd (A) rf! In J, 301 is a microwave oscillator, 302 is an isolator, 303 is a power monitor,
303a is a pointer, 304 is a matching box, 305 is a plasma generating furnace, 305a is a shielding cylinder, 306 is a sliding short-circuit plate, 30
7 is a reactor, 307a is a gas transport pipe, 307b is an exhaust pipe, 307c is a plasma generation tube, 308 is an exhaust device, 30
9 is Pa.

310 is a lid, 311 is a substrate, 312 is a gas introduction pipe, and 313 is a vacuum gauge. Third (
B) Figure is a partial enlargement of Figure 3 (A).

That is, the IMW-PCVD apparatus is composed of a vacuum system, an exhaust system, and a microwave introduction system, as shown in FIG.

In Figures 3 (A) and (B), the vacuum system includes a reactor 307 and a microwave-transparent plasma generation tube 307 with an inner diameter of about 40 mm connected via a gas transport pipe 307a.
c (for example, a quartz tube) or a window. The quartz tube 307c (or window) is connected to the first gas introduction pipe 312 and is perpendicular to the microwave waveguide. A second gas introduction pipe (not shown) is connected into the reactor 307, and the introduced gas (silane gas) is exhausted by an exhaust system (307b, 30B). In this device, the gas (0□ gas or N gas) introduced from the first gas introduction pipe is turned into plasma by microwave discharge. When discharging by microwave energy, a sliding shorting plate (-plunger) 306 is moved to match the microwave input impedance. The radicals in the plasma thus generated react with the silane gas introduced through the second gas introduction pipe, and the substrate 311
A film of SiC2 or SiN is then formed thereon.

As for the type 2MW-PCVD apparatus, the one shown in FIG. 4 can be mentioned as a typical one (Japanese Patent Laid-Open No. 57133636).

In FIG. 4, 401 is a plasma generation chamber, 402 is a deposition chamber, 403 is a microwave introduction window, 404 is a microwave rectangular waveguide, 405 is a water cooling pipe, 406 is a first gas introduction pipe, and 409 is a plasma extraction window. , 411 is the substrate, 4
13 is an electromagnet ([air coil>-414 is a movable end plate, 4
15 is a cylinder, 416 is a folded groove with choke structure, 417
418 is an annular member made of a high magnetic permeability material, 419 is a foreign material made of a high magnetic permeability material, and 420 is a cooling sample stage. In addition to using the electromagnet 413, this device uses the above-mentioned IMW-P system configuration and form.
This is the same as in the case of a CVD device. That is, the vacuum system includes a cylindrical plasma generation chamber 401 and a deposition chamber 40 connected thereto.
2, and a microwave introduction window 403 is provided in the plasma generation chamber so as to maintain a vacuum in the chamber. A first gas introduction pipe 406 and a microwave rectangular waveguide 404 are connected to the plasma generation chamber 401, and the plasma generation chamber is connected to a water cooling pipe 4 provided on its outer periphery.
It is designed to be water cooled via 05. Also, the fourth
In the apparatus shown in the figure, itM! is concentric with the plasma generation chamber 401! 1 stone 413 is placed,
The direction of the magnetic lines of force is the same as the direction in which the microwaves travel, and the magnetic field and the electric field of the microwaves are perpendicular to each other to produce electron cyclotron motion.

For this reason, the plasma generation chamber 401 is designed to be a TExt (t: natural number) mode cavity resonator. Further, a second gas introduction pipe and an exhaust system are connected to the deposition chamber 402, and the gas in the deposition chamber is exhausted via the exhaust system.

In the 2MW PCVD apparatus represented by the apparatus shown in FIG. Ru. When the magnetic field is 875 Gauss, the reflected waves of microwave energy become almost zero. However, in this device, the end plate 414 of the cavity resonator having a choke structure is moved in a vacuum, so that the conditions of the cavity resonator can be satisfied by the gas type, gas pressure, and introduced microwave power. The above hydrogen plasma is transported along the direction of magnetic field lines while performing electron cyclotron motion, and the radicals in the plasma are
It reacts with the gas (silane gas) introduced through the second gas introduction pipe, and a film of A-5i is formed on the group Fi, 411.

However, both the conventional IMW-PCVD apparatus and the 2MW-PCVD apparatus have problems that need to be solved.

In other words, for IMW-PCVD equipment, in order to obtain stable discharge, (i) it is necessary to control the internal pressure to a level higher than ITorr, and (ii) film formation is difficult because radicals are deactivated in the gas transport pipe. The deposition rate is slow, and (iii) if you try to speed up the film deposition rate by increasing the input microwave power, the electric field will concentrate at the intersection of the quartz tube and the waveguide, causing the quartz tube to swell and tarnish. However, there are problems in that the sputtering generates particles and these particles are incorporated into the deposited film, resulting in the resulting film having defects in electrical properties.

In addition, although there are no problems related to radical deactivation and sputtering as described above in the i2MW-PCVD apparatus 11, there are problems that require further solutions.

That is, (iv) film formation is performed at an internal pressure of about 10-'Torr (
In other words, since the mean free path of radicals is approximately 1 m), when forming the A-3i film using H2 gas and silane gas, A-3i # is deposited on the microwave introduction window side rather than on the substrate. (v) As a result, the A-3i film is deposited inside the cavity resonator, making it gradually difficult to maintain and start the discharge. The resulting A-3i film will eventually peel off and adhere to the substrate or the film being deposited, reducing the quality of the resulting deposited film;
(vi) Because of these things, each time a film is formed, the chamber (
There are problems such as the need to clean the inside of the deposition chamber (vi) and therefore the operating rate of the apparatus is low.

In addition to these problems, in the method 2MW-PCVD equipment, the microwave introduction window (3) and the waveguide (4) are
Since it is fixed, the length of the cavity resonator can be changed by moving the end plate (16) in a vacuum, which causes another problem of poor working efficiency.

[Purpose of the invention]

The present invention utilizes conventional microwave plasma CV D gl (
The A-3i is a high-quality A-3i with high operating rate and work efficiency that eliminates the various problems mentioned above regarding MW-PCVD equipment.
Improved MW- that can consistently produce deposited films such as
The main purpose is to provide a PCVD device.

Another object of the present invention is to form a desired uniform deposited film on a large area substrate by appropriately selecting the propagation mode of microwaves without using a large st magnet as in the ECR method. Improved MW-PC that enables
Our goal is to provide a VD device.

Still another object of the present invention is to always match the microwave input impedance for discharge by microwave energy regardless of the ionization cross section of the gas, and to effectively utilize the microwave energy to produce a desired deposited film in large quantities. To provide an improved MW-P CVD device that enables In order to achieve the above objective, we conducted extensive research. As a result, (a) measures were taken to suppress gas back-diffusion by using pressure gradients instead of magnetic field gradients in the ECR method, and (b) microwaves were used in the deposition chamber without relying on plasma density. By adopting the device configurations of (a) to (c), which consist of matching and creating a structure that operates as a cavity resonator, and (c) penetrating the Herjar into the cavity resonator, the conventional MW-PCVD equipment can be improved. The inventors have obtained the knowledge that the above-mentioned objects of the present invention can be achieved as desired by eliminating the various problems mentioned above.

The present invention was completed based on this knowledge, and its gist is a sealed vacuum container, a means for evacuating the inside of the vacuum container, and a microwave three-dimensional circuit for injecting microwaves into the vacuum container. A microwave plasma CVD apparatus (MWPCV) characterized in that a cylindrical cavity resonator is provided in the microwave three-dimensional circuit.
D device).

By the way, regarding the MW-PCVD apparatus of the present invention, the above (
The device configuration in point (a) is achieved as follows. That is, by adopting the structure of a cavity resonator and making the end plate of the cavity resonator a perforated plate, the vacuum container is divided into two parts: the inside of the cavity resonator and the film forming chamber, which is the inside of the cavity resonator. Gas other than raw material gas (e.g. silane gas, etc.) is placed on the vacuum container side.
A pressure gradient is formed by flowing a gas (eg, Hz gas, Ar gas, etc.) to increase the pressure in the vacuum container inside the cavity resonator higher than the pressure in the film forming chamber. That is, it becomes dark (a)
This device configuration enables discharge at an internal pressure of 10-3 Torr to I Torr, and in this internal pressure region, the mean free path of the radicals in the generated plasma is short, and at the same time, the gas flow is regulated by the pressure gradient. Therefore, back diffusion of the material gas is effectively suppressed.

The device configuration in point (b) above can be achieved by providing two matching circuits that can be adjusted as appropriate depending on the phase and amplitude of the microwave. Note that, since standing wave energy is accumulated between the matching circuit and the cavity resonator, it is desirable to shorten the distance as much as possible. In a currently particularly desirable embodiment, a matching circuit and a cavity resonator are integrated, and at least one of the two matching circuits is made into a variable cavity length plunger.

Incidentally, the phase and amplitude of the above-mentioned reflected microwave mainly depend on the plasma density and the shape of the microwave power supply circuit.

That is, the plasma density changes depending on the gas type, gas pressure, or introduced microwave power, and at this time, the complex refractive index n-1k (absorption coefficient when Q<n<l) of the plasma also changes. Therefore, in order to always operate as a cavity resonator, it is necessary to cancel the effect of n.

In order to cancel the effect of n, it is difficult to change the cavity inner diameter, so the cavity inner diameter should be made n times thinner (0<n<1) by increasing the cavity resonator length (L). .

Resonance frequency (f = 2.45GHz), resonance rst
Once the mode (TMrst or TErst) and cavity inner diameter (nD) are determined, the new cavity length in terms of air (
L') is determined by the following equation.

In the case of TMrst mode, yr@ is the root of the number of henocells Jr(y)=0,
C is the speed of light.

Similarly, in the case of TERst mode, ya,' is the −th derivative J,' of the Benschel function J, D).
(y) = root of 0, and C is the speed of light.

As is clear from the formulas fi+ and (1)′, n
The effect of n can be canceled by adjusting the cavity resonator length according to the amount of change in n.

In addition, to cancel the effect of k, that is, the amplitude and phase delay δ of the reflected wave, it is necessary to use a sliding aperture or E-H
This is done by adjusting the tuner, three-stub tuner, etc.

On the other hand, reflected waves caused by the shape of the microwave feeding circuit can also be efficiently matched by using two types of matching circuits.

The device configuration in point (c) above can be achieved by fastening the rectangular waveguide and the cylindrical cavity resonator so that their axes are perpendicular to each other, as shown in FIG. By doing this, the waveguide does not get in the way when changing the cavity resonator length, and the cavity length can be changed even in the atmosphere, improving work efficiency.

Hereinafter, the MW-PCVD apparatus according to the present invention will be explained in detail with reference to illustrated apparatus examples, but the present invention is not limited thereto.

1. For the sake of simplicity, we will only explain the case where a cylindrical cavity resonator is used. An example of the apparatus in that case is shown in the schematic perspective diagram of FIG.

In the first session, 21 is a rectangular waveguide, 22 is a cylindrical cavity resonator, 23 is a cavity resonator length variable plunger, 24 is a cylindrical sliding diaphragm, 25 is a microwave transparent bell jar, 26 is a microwave Reflection member, 27 is a deposition chamber, 28
29 is a substrate, 29 is a substrate susceptor, and 30.31 is a gas introduction pipe.

The MW-PCVD apparatus of the present invention illustrated in FIG. 1 is essentially a cavity resonator type microwave plasma CVD apparatus,
Microwave oscillator (not shown), microwave three-dimensional circuit (
(not shown), a cavity resonator, and a gas introduction pipe (30,3
1) and a deposition chamber equipped with a gas exhaust port 32.

In FIG. 1, the material of the cylindrical cavity resonator 22 is preferably one with low electrical resistivity in order to reduce ohmic loss caused by the flow of microwaves over the surface. Also,
Since the variable cavity length plunger 23 moves while moving on the plate, it must be resistant to wear. Therefore, it must be made of copper, brass,
Alternatively, it is preferably made of silver, copper, or gold-plated stainless steel. Among these, silver-plated stainless steel is most suitable.

This cylindrical cavity resonator 22 is fastened so that its rotation axis and the center axis of the rectangular waveguide are perpendicular to each other, and the rectangular waveguide 2
1 Hlo (TEl.) mode of the circular waveguide as EO, (
TM, , ) mode.

In the case of conversion to E, , (TM, ,) mole, an order around m/2λg (m is an integer, λg is the tube wavelength) from the two plungers during discharge! to make the most written connection. In addition, when increasing the size of the cylindrical cavity resonator 22 in the radial direction, not only the E@I (T M 01 ) mode but also other modes such as E, (TM, , )Et, (T
M□) etc. may also be used.

This cavity resonator 22 is integrated with two matching circuits, one of which is a variable cavity length plunger 23 and the other a sliding diaphragm 24.

An E-H tuner, three-stub tuner, etc. may be used instead of the sliding aperture.

Further, the cavity resonator length variable plunger 23 is movable along the axis of the cavity resonator 22, and may be driven by a motor 36, for example. In order to prevent abnormal discharge between the plunger 23 and the cavity resonator 22, a spring material made of phosphor bronze is used to ensure good contact.

The sliding diaphragm 24 has a rectangular waveguide 21 and a cavity resonator 2.
A pair of left and right are placed at the cross section of 2. The two apertures are structured so that they can each slide independently. This diaphragm and the cavity resonator 22 are brought into contact in the same manner as in the case of the plunger.

The aforementioned cavity resonator 22 (for example, inner diameter φ120fi)
A microwave-transparent bell jar 25 penetrates inside. This bell jar 25 is connected to a deposition chamber 27, and an O-ring (or metal sealing material) for vacuum sealing and a microwave reflecting member 26 are installed on the flange surface of the bell jar. The waves are reflected, allowing gas to pass between the herger 25 and the deposition chamber 27.

This Belgear 25 is made of quartz (310g), alumina ceramics (Az, O3), boron nitride (BN).
, silicon nitride (SiN).

Further, the microwave reflecting member 26 is a perforated plate in which a large number of holes are bored in a metal plated with silver, copper, or gold (silver plating is particularly suitable).
This is a so-called punching board, which is a 0.8-fi thick aluminum perforated board with six circular holes. This porous plate is fastened to the deposited film 27 with screws in order to suppress abnormal discharge. As a substitute for such perforated plates, extract band
Metal may also be used.

Inside the deposition chamber 27 there are a substrate 2, a substrate susceptor 29 and two gas introduction pipes 30 and 31, among which
30) penetrates the microwave reflecting member 26 and its tip is open inside the bell gear 25, and the other one (
31) has a ring-shaped tip so that gas is ejected from a large number of nozzle holes, and is installed between the bell gear 25 and the substrate susceptor 29.

The deposition chamber 27 is connected to an exhaust pump (not shown), and is evacuated by this.

In operating the MW-PCVD apparatus of the present invention as described above, first, prior to operation, the cavity resonator length is set to m/2Xλ (m
: Natural number). These days,
Specifically, in order to form a cavity resonator with the bell jar 25 built-in, we installed a china throat work analyzer (
A shortening method is determined by measuring the length using a Heulet Panocard (manufactured by Huyuret Panocard).

That is, if the bell jar has a wall thickness of 31 m, a diameter of 70 m, and a height of 100 m, and a wall size of 3 fi, a diameter of 110 m, and a height of 100 m, the shortened distances are 3 fi and 4 fi, respectively. , the cavity resonator length is 291 Tsuru and 2
It is 90■.

After preparing as above, operate the device. Then, microwave power inputted from a microwave oscillator (not shown) is amplified in the cavity resonator 22 via the waveguide 21, and the hydrogen gas or hydrogen gas introduced into the bell jar 25 from the gas introduction vibe 30 is amplified. The argon gas mixture becomes microwave plasma. However, after discharge, the reflection of microwaves increases rapidly, so the cavity resonator length variable plunger and sliding diaphragm are adjusted to reduce the reflected power of the power monitor built into the microwave three-dimensional circuit.

In this device example, the Pel jar has a wall thickness of 3 mm and a diameter of 7 mm.
When generating hydrogen plasma using a quartz bell jar with a height of 0+n and a height of 100fi, the microwave reflection is
Table 1 shows an example of the arrangement of two matching circuits to make the ratio less than 0%.

Note that Table 1 shows that the cavity resonator length is set to 2 before discharge.
90 Tsuru, fully open sliding aperture opening (mouth; 96X27
This figure shows the arrangement of two matching circuits after discharge based on point (m). The horizontal dimensions of the aperture are shown when the diaphragm is moved symmetrically (10 to 96 squares), and the vertical dimension is when it is fixed at 27 squares.

Table 1 Matching circuit arrangement according to pressure and microwave power Fully open aperture In this device example, the microwave oscillator is continuous oscillation.
Microwaves with a ka ripple rate of 10% or less in the range of 200 W to 500 W are used. Then, when -degree plasma is generated, the microwave power is continuously injected into the plasma with fluctuations within 10%, so that the plasma shifts to a steady state.

Therefore, in the case of the present device example, the input impedance of the microwave is adjusted to match at each stage before discharge and after discharge reaches a steady state. It is sufficient to make such adjustments by adjusting the cavity length and the sliding diaphragm once before and after discharge.

By using the MW-PCVD apparatus of the present invention described above,
When forming a deposited film such as -5i film, the conventional MW -P
The problem of back-diffusion of gas within the system, which occurs when CV o = z, can be easily solved by simply controlling the flow rate ratio of the gas used, and the desired deposited film can be efficiently formed.

An example of 1 film formation is shown below.

bottom! (2) Using the MW-PCVD apparatus of the present invention described in Apparatus Example 1 above, an A-5i:H:F film was deposited on a quartz substrate under the film forming conditions shown in Table 2.

As shown in Table 2, SiF a is used as a raw material gas for film formation.
H gas and Ar gas were used as raw material gases for plasma generation.

The problem of back-diffusion of gas within the system, which is observed in the conventional MW-PCVD equipment mentioned above during film formation, can be solved by increasing the flow rate ratio of 5iFn gas and other gases (I (z gas + Ar gas) to 1:10 or more. This could be prevented by controlling the situation.

Table 2 When the thus obtained A-5i:H:F film was evaluated by a known evaluation method, it was found to have the following characteristics and to be of high practical value.

That is, photoconductivity σP = 3.5 x 10"[Ω-'d-'
] Dark conductivity σ, =], 2X10-Io[Ω-1[1]E
gopt (optical band gear + 7 blocks) = 1.86 [
eV]Ea (activation energy) = 0.73 [e
V] Device In the device example 1, the rectangular waveguide 21 is fastened such that the E plane of the rectangular waveguide 21 is orthogonal to the rotation axis of the cylindrical cavity resonator 22.

On the other hand, in the example of this device shown in FIG. 2, the H-plane of the rectangular waveguide is fastened orthogonal to the rotation axis. The other device configurations are the same as in device example 1 except for the lower part. That is, the cylindrical cavity resonator is excited in the TMO, (Ea,) mode in device example 1, but is excited in the TEo+(Hot) mode in this device example. As a result, the appropriate inner diameter according to the microwave mode is larger in this device example than in device example 1.
Suitable for forming films on large substrates.

The rectangular waveguide 21 is connected to the cylindrical cavity resonator 22 by (2m+1)/4λg (m is an integer, λ
g is around the tube wavelength)! The tightest coupling will be obtained if you use a sliding aperture (not shown) or a tuner such as an E-H tuner or three-stub tuner (not shown).
By using , impedance matching can be achieved and microwave power can be made non-reflective.

If you want to make it even larger, use TE6. Modes other than (H,,) mode, such as T E +□ (Hl mode, T
It may be set to E 02 (Hox) mode or the like.

In addition, it is not limited to the single mode as mentioned above, but also multi-mode, such as T E o I (Ho l).
TMz (Ez) mode (degenerate mode, D>10
0In becomes dual mode), TE! (Hz+)+
TE+z (Hlg) mode (if the inner diameters are equal in integral multiple of 1/2 of the tube wavelength of each mode, such as D=230 m, it becomes a dual mode cylindrical cavity resonator), etc. may be used.

[Summary of effects of the invention]

As explained above, according to the MW-PCVD apparatus of the present invention, all the various problems seen in conventional MW-PCVD are solved, the operating rate and work efficiency of the apparatus are significantly improved, and the A-3i device In addition to being able to lower manufacturing costs, such effects include eliminating variations in performance of the resulting devices. Also, EC
Since a large electromagnet as in the R method is not used, the area can be easily increased by selecting a microwave propagation mode. Furthermore, since the distance from the end of the cavity resonator to the coupling hole can be changed, the microwave input impedance can always be matched regardless of the ionization cross section of the gas, and the microwave power can be used effectively and the gas used It is also possible to use the fuel with extremely high efficiency.

[Brief explanation of the drawing]

FIG. 1 is a schematic perspective view schematically showing a typical example of the microwave plasma CVD apparatus of the present invention, and FIG. 2 is a schematic perspective view showing another example of the microwave plasma CVD apparatus of the present invention. be. Figures 3 and 4 show conventional microwave plasma CVD
It is an explanatory view or a schematic cross-sectional view of the device. 1 and 2, 21... rectangular waveguide,
22... Cavity resonator, 23... Cavity resonator length variable plunger, 24... Sliding aperture, 25... Microwave transparent bell jar, 26... Microwave reflecting member, 27... ...Deposition chamber, 2nd day...Substrate, 29...
・Substrate susceptor, 30.31...Gas introduction pipe, 3
2...Gas exhaust port, 36...Motor, 37...
Electric field, 38...magnetic field. Regarding FIG. 3, 301...Microwave oscillator, 30
2... Isolator, 303... Power monitor,
303a... Pointer meter, 304... Matching device, 305...
...Plasma generation reactor, 305a...Shielding tube, 306.
・Sliding short circuit plate, 307... Reactor, 307a... Gas transport pipe, 307b... Exhaust pipe, 307C... Plasma generation tube, 30B... Exhaust device, 309... Packing, 310 ...Lid, 3]1...Substrate, 312...
・Gas introduction pipe, 313...vacuum gauge. Regarding Figure 4, 401... plasmaization chamber, 402...
...Deposition chamber, 403...Microwave introduction window, 404.
...Microwave rectangular waveguide, 405...Water cooling pipe,
406... First gas introduction pipe, 409... Plasma drawer window, 411... Substrate, 413... Electromagnet (
magnetic coil), 414... movable end plate, 415...
Cylindrical, 416... Chick structure folding groove, 417.
-・Aperture (iris), 418... Annular member made of high magnetic permeability material, 419... Outer case made of high 1 siff rate material, 42
0...Cooled sample stage. Patent applicant Canon Co., Ltd. Figure 3 (A) Figure 3 (B) Figure

Claims (7)

[Claims] (1) A sealed vacuum container, means for holding a substrate in the vacuum container, and means for supplying raw material gas into the vacuum container;
A microwave plasma CVD apparatus comprising means for evacuating the inside of the vacuum container, and means for introducing microwaves into the vacuum container via a microwave three-dimensional circuit to generate microwave plasma, A microwave plasma CVD apparatus characterized in that a cylindrical cavity resonator is provided in a three-dimensional circuit. (2) The microwave plasma CVD according to claim (1), wherein the axis of the cylindrical cavity resonator and a rectangular waveguide for injecting microwaves into the cylindrical cavity resonator are fastened to be perpendicular to each other. Device. (3) The mode of the cylindrical cavity resonator is TMrst(r,
3. The microwave plasma CVD apparatus according to claim 2, wherein s and t are 0 or positive integer) modes. (4) The mode of the cylindrical cavity resonator is TERst(r,
3. The microwave plasma CVD apparatus according to claim 2, wherein s and t are 0 or positive integer) modes. (5) The microwave plasma CVD apparatus according to claim (2), wherein the mode of the cylindrical cavity resonator is multimode. (6) The microwave plasma CV according to claim (2), wherein a microwave-transparent bell jar for forming a discharge space is inserted into the cylindrical cavity resonator.
D device. (7) The microwave plasma according to claim (2), wherein the coupling position between the cylindrical cavity resonator and the TE_1_0 mode rectangular waveguide is at a position where microwave coupling is most dense during discharge. CVD equipment.