JPH0463591B2 - - Google Patents

Info

Publication number
JPH0463591B2
JPH0463591B2 JP58098305A JP9830583A JPH0463591B2 JP H0463591 B2 JPH0463591 B2 JP H0463591B2 JP 58098305 A JP58098305 A JP 58098305A JP 9830583 A JP9830583 A JP 9830583A JP H0463591 B2 JPH0463591 B2 JP H0463591B2
Authority
JP
Japan
Prior art keywords
transfer gate
photoelectric conversion
conversion section
vertical register
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58098305A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59223081A (ja
Inventor
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58098305A priority Critical patent/JPS59223081A/ja
Publication of JPS59223081A publication Critical patent/JPS59223081A/ja
Publication of JPH0463591B2 publication Critical patent/JPH0463591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58098305A 1983-06-02 1983-06-02 インタ−ライン方式ｃｃｄイメ−ジセンサおよびその駆動法 Granted JPS59223081A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58098305A JPS59223081A (ja) 1983-06-02 1983-06-02 インタ−ライン方式ｃｃｄイメ−ジセンサおよびその駆動法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58098305A JPS59223081A (ja) 1983-06-02 1983-06-02 インタ−ライン方式ｃｃｄイメ−ジセンサおよびその駆動法

Publications (2)

Publication Number Publication Date
JPS59223081A JPS59223081A (ja) 1984-12-14
JPH0463591B2 true JPH0463591B2 (de) 1992-10-12

Family

ID=14216210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58098305A Granted JPS59223081A (ja) 1983-06-02 1983-06-02 インタ−ライン方式ｃｃｄイメ−ジセンサおよびその駆動法

Country Status (1)

Country Link
JP (1) JPS59223081A (de)

Also Published As

Publication number Publication date
JPS59223081A (ja) 1984-12-14

Similar Documents

Publication Publication Date Title
US4330796A (en) Block readable charge coupled device
US5872371A (en) Active pixel sensor with punch-through reset and cross-talk suppression
JP3892112B2 (ja) パンチスルーリセットとクロストーク抑制を持つ能動画素センサー
JPH05137072A (ja) 固体撮像装置
JPS63111776A (ja) イメージセンサ
JP4314693B2 (ja) 固体撮像素子の駆動方法、固体撮像装置および撮像システム
JPH06164826A (ja) 固体撮像装置とその駆動方法
JPH04281681A (ja) Ｘ‐ｙアドレス型固体撮像装置
JPH0463591B2 (de)
JP2988557B2 (ja) 固体撮像装置及びそれを用いたカメラ装置
JPS61188965A (ja) 固体撮像装置
JPH0150156B2 (de)
JPH09270503A (ja) 固体撮像装置
JP2825075B2 (ja) 固体撮像素子とその駆動方法
JP2619122B2 (ja) 固体撮像装置の駆動方法
JP2523617B2 (ja) 固体撮像装置の駆動方法
JP3158324B2 (ja) 固体撮像素子の駆動方法
JP4593751B2 (ja) リニアセンサ及びその駆動方法
JP2987844B2 (ja) 固体撮像装置及びその駆動方法
JP2894489B2 (ja) 固体撮像素子の駆動方法
JP4284783B2 (ja) 固体撮像装置
JPS5848579A (ja) 固体撮像装置
JP3271164B2 (ja) 固体撮像装置
JPS61174765A (ja) 固体撮像装置
Tredwell High-density solid-state image sensors