JPH0464159B2 - - Google Patents
Info
- Publication number
- JPH0464159B2 JPH0464159B2 JP61106690A JP10669086A JPH0464159B2 JP H0464159 B2 JPH0464159 B2 JP H0464159B2 JP 61106690 A JP61106690 A JP 61106690A JP 10669086 A JP10669086 A JP 10669086A JP H0464159 B2 JPH0464159 B2 JP H0464159B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- tio
- resistivity
- film
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 35
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 239000008188 pellet Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 49
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はデイスプレイ装置等に用いられるEL
（エレクトロルミネツセンス）デイスプレイパネ
ルに関し、特に印加電圧が低くてすむELデイス
プレイパネル並びにその製造方法に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention is an EL device used in display devices, etc.
The present invention relates to (electroluminescence) display panels, and in particular to EL display panels that require low applied voltage and methods for manufacturing the same.
（従来の技術）
従来、この種の技術として本願出願人の先の出
願に係る特願昭60−193135号に開示される技術が
ある。(Prior Art) Conventionally, as this type of technology, there is a technology disclosed in Japanese Patent Application No. 1983-193135 filed earlier by the applicant of the present application.
従来、この種の装置は第２図に示す様にガラス
基板１１上に複数本の電極子としてパターニング
された透明電極１２を設け、さらにその上に高抵
抗率SiO2膜１３、→抵抵抗率Ta2O5膜１４→発光
膜１５→低抵抗率Ta2O5膜１６→高抵抗率SiO2膜
１７と順次積層し、更に背面電極１８を前記透明
電極１２と直角に交差するように積層されてい
る。高抵抗率SiO2膜１３および１７はスパツタ
法により形成されており、また低抵抗率Ta2O5膜
１４および１６は電子ビーム蒸着法で形成されて
いる。また発光層はZnS：Mnを電子ビーム蒸着
法で形成されている。このようなELデイスプレ
イパネルの透明電極１２と背面電極１８との間に
交流電圧を印加すると両電極の交差点部の発光層
１５がドツト状として発光する。ところで、特願
昭60−193135号に示されている通り発光層１５の
両側に低抵抗率Ta2O5膜を設けると高輝度発光が
得られ、良好な文字又は画素を表示できる。 Conventionally, this type of device has a transparent electrode 12 patterned as a plurality of electrode elements on a glass substrate 11 , as shown in FIG. A Ta 2 O 5 film 14 → a light emitting film 15 → a low resistivity Ta 2 O 5 film 16 → a high resistivity SiO 2 film 17 are laminated in this order, and a back electrode 18 is further laminated so as to cross the transparent electrode 12 at right angles. has been done. The high resistivity SiO 2 films 13 and 17 are formed by sputtering, and the low resistivity Ta 2 O 5 films 14 and 16 are formed by electron beam evaporation. The light-emitting layer is made of ZnS:Mn by electron beam evaporation. When an alternating current voltage is applied between the transparent electrode 12 and the back electrode 18 of such an EL display panel, the light emitting layer 15 at the intersection of both electrodes emits light in the form of a dot. By the way, as shown in Japanese Patent Application No. 60-193135, if a low resistivity Ta 2 O 5 film is provided on both sides of the light emitting layer 15, high luminance light emission can be obtained and good characters or pixels can be displayed.
前述のELデイスプレイパネルの印加電圧の低
電圧化を図るには高抵抗率SiO2膜１３および１
７と低抵抗率Ta2O5膜１４および１６の誘電率を
大きくする必要がある。ところで、高抵抗率
SiO2膜１３および１７は電流制限の役割ととく
に高抵抗率SiO2膜１７は背面電極１８のパター
ニング工程中にエツチング液に発光層１５が腐食
されないようにするパツシベーシヨン膜としての
役割があるため、実験の結果、高抵抗率SiO2膜
１７が用いられている。従つて低抵抗率Ta2O5膜
１４，１６を高誘電率なものとすることが望まし
い。 In order to reduce the voltage applied to the EL display panel mentioned above, high resistivity SiO 2 films 13 and 1 are used.
7, it is necessary to increase the dielectric constant of the low resistivity Ta 2 O 5 films 14 and 16. By the way, high resistivity
The SiO 2 films 13 and 17 play the role of current limiting, and the high resistivity SiO 2 film 17 in particular plays the role of a passivation film to prevent the light emitting layer 15 from being corroded by the etching solution during the patterning process of the back electrode 18. As a result of the experiment, a high resistivity SiO 2 film 17 is used. Therefore, it is desirable that the low resistivity Ta 2 O 5 films 14 and 16 have a high dielectric constant.
（発明が解決しようとする問題点）
しかしながら、低抵抗率Ta2O5膜の誘電率は20
〜30程度であり低電圧化を図るには限度がある。
このTa2O5膜に代わる高誘電率材料、例えば、
TiO2膜は誘電率が50〜100と非常に大きいが、電
子ビーム蒸着法で薄膜形成することは難しく、ま
た、誘電率が50〜100のTiO2膜を形成するにはガ
ラス基板を800〜1000℃に加熱して膜形成しなけ
ればならないが、非常に高温であるためガラス基
板が溶融してしまい、高誘電率のTiO2膜は得ら
れず、このため印加電圧の低電圧化を図つたEL
デイスプレイパネルを実現できないという欠点が
あつた。(Problem to be solved by the invention) However, the dielectric constant of the low resistivity Ta 2 O 5 film is 20
~30, and there is a limit to how low the voltage can be achieved.
High dielectric constant materials to replace this Ta 2 O 5 film, e.g.
TiO 2 film has a very high dielectric constant of 50 to 100, but it is difficult to form a thin film using electron beam evaporation, and in order to form a TiO 2 film with a dielectric constant of 50 to 100, a glass substrate with a dielectric constant of 800 to 100 is required. The film must be formed by heating to 1000℃, but the extremely high temperature melts the glass substrate, making it impossible to obtain a TiO 2 film with a high dielectric constant.For this reason, efforts were made to lower the applied voltage. Tsuta EL
The drawback was that a display panel could not be realized.
本発明は、高輝度が得られ、かつ誘電率の大き
い薄膜を形成しELパネルの印加電圧の低電圧化
を図ることを目標とする。 The present invention aims to reduce the voltage applied to an EL panel by forming a thin film that provides high brightness and a high dielectric constant.
（問題点を解決するための手段）
本発明は前述の問題点を解決するために、透明
基板上に、透明電極と、高抵抗率の第１の絶縁膜
と、低抵抗率の第２の絶縁膜と、発光層と、低抵
抗率の第３の絶縁膜と、高抵抗率の第４の絶縁膜
と、背面電極とを順次積層してなるELパネルに
おいて、前記第２の絶縁膜及び前記第３の絶縁膜
がTa2O5とTiO2との混合物からなるようにした
ものである。また、前記第２の絶縁膜及び前記第
３の絶縁膜においては、TiO2が85重量％以下含
まれることが適当である。このようなELデイス
プレイパネルにおいて、第２、第３の絶縁膜は、
Ta2O5粉末と85重量％以下のTiO2粉末とを混合
し、この混合物をプレス成形後500℃以上の温度
で大気中もしくは真空中で焼成して作つたペレツ
トを用いて電子ビーム蒸着法により形成される。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention includes a transparent electrode, a first insulating film with high resistivity, and a second insulating film with low resistivity on a transparent substrate. In an EL panel formed by sequentially laminating an insulating film, a light-emitting layer, a third insulating film with low resistivity, a fourth insulating film with high resistivity, and a back electrode, the second insulating film and The third insulating film is made of a mixture of Ta 2 O 5 and TiO 2 . Furthermore, it is appropriate that the second insulating film and the third insulating film contain 85% by weight or less of TiO 2 . In such an EL display panel, the second and third insulating films are
Electron beam evaporation method using pellets made by mixing Ta 2 O 5 powder and 85% by weight or less TiO 2 powder, press-molding this mixture, and firing it in the air or vacuum at a temperature of 500°C or higher. formed by.
（作用）
前述の説明の如く、本発明は、発光層の両側に
低抵抗率絶縁膜を設けたELデイスプレイパネル
において、Ta2O5とTiO2との混合材料をペレツ
トとし、電子ビーム蒸着法により、ガラス基板を
加熱することなく高誘電率でかつ、低抵抗率の
（Ta2O5＋TiO2）膜を形成しているため、ELデ
イスプレイパネルの低電圧での駆動が可能とな
り、しかも高輝度発光に適したTa2O5絶縁膜の特
長も損なわれない。(Function) As explained above, the present invention is an EL display panel in which a low resistivity insulating film is provided on both sides of a light emitting layer, using a mixed material of Ta 2 O 5 and TiO 2 as pellets, and using an electron beam evaporation method. As a result, a (Ta 2 O 5 + TiO 2 ) film with high dielectric constant and low resistivity is formed without heating the glass substrate, making it possible to drive EL display panels at low voltages and at high The features of the Ta 2 O 5 insulating film, which is suitable for luminescent light emission, are not compromised.
（実施例）
第１図は本発明の一実施例を示すELデイスプ
レイパネルの構造図であつて、ガラス基板１上に
In2O3，SnO2などから成り、複数本の電極として
パターニングされた透明電極２を設け、さらにこ
の透明電極２及びその間の部分の上全面にスパツ
タ法により高抵抗率SiO2絶縁膜３を形成し、更
に該高抵抗率SiO2絶縁膜３上にTa2O5にTiO2を
混合した材料を用いて電子ビーム蒸着法により低
抵抗率（Ta2O5＋TiO2）絶縁膜４を形成し、さ
らに発光層５、低抵抗（Ta2Ｏ＋TiO2）絶縁膜
６、高抵抗率SiO2絶縁膜７、背面電極８と順次
積層される。(Embodiment) FIG. 1 is a structural diagram of an EL display panel showing an embodiment of the present invention.
A transparent electrode 2 made of In 2 O 3 , SnO 2, etc., patterned as multiple electrodes is provided, and a high resistivity SiO 2 insulating film 3 is further deposited on the entire surface of the transparent electrode 2 and the area between them by sputtering. Then, a low resistivity (Ta 2 O 5 +TiO 2 ) insulating film 4 is formed on the high resistivity SiO 2 insulating film 3 by electron beam evaporation using a material containing Ta 2 O 5 and TiO 2 . Further, a light emitting layer 5, a low resistance (Ta 2 O+TiO 2 ) insulating film 6, a high resistivity SiO 2 insulating film 7, and a back electrode 8 are laminated in this order.
前述の高抵抗SiO2絶縁膜３，７は電流制限の
機能をもたせるために1012〜1014Ωcm（104〜106
Ｖ／cmにおいて）の抵抗率が必要であるので
SiO2をターゲツトとし（Ar＋O2）ガス雰囲気中
でスパツタ法により400〜1000〓の膜厚に形成さ
れる。一方、低抵抗（Ta2O5＋TiO2）絶縁膜４，
６は高輝度発光のための電子供給層としての機能
を有するため特願昭60−193135号に示される低抵
抗率Ta2O5膜と同様に107〜109Ωcm（104〜106
Ｖ／cmの電界強度において）の抵抗率が必要とな
る。この低抵抗率Ta2O5膜は特願昭60−193135号
に記載の如く電子ビーム蒸着法により容易に形成
される。しかし、TiO2は高誘電率ではあるもの
の薄膜の形成が難しく、またこのTiO2を電子ビ
ーム蒸着法で蒸着する場合、Ta2O5と同様に
TiO2は融点が高いので照写する電子ビームのパ
ワーを上げ高温に加熱する必要があるが、このと
きTiO2はTiとO2とに分解し、このO2ガスにより
真空度が下がり電子ビームが発生できなくなつた
り、TiO2を完全に溶融できず大きな粒子として
蒸着されてしまう。 The aforementioned high-resistance SiO 2 insulating films 3 and 7 have a resistance of 10 12 to 10 14 Ωcm (10 4 to 10 6
Since a resistivity of (in V/cm) is required,
It is formed to a film thickness of 400 to 1000 mm by sputtering in an (Ar+O 2 ) gas atmosphere using SiO 2 as a target. On the other hand, a low resistance (Ta 2 O 5 +TiO 2 ) insulating film 4,
Since 6 has a function as an electron supply layer for high-intensity light emission, it has a resistance of 10 7 to 10 9 Ωcm (10 4 to 10 6
A resistivity of (at an electric field strength of V/cm) is required. This low resistivity Ta 2 O 5 film is easily formed by electron beam evaporation as described in Japanese Patent Application No. 193135/1982. However, although TiO 2 has a high dielectric constant, it is difficult to form a thin film, and when depositing TiO 2 by electron beam evaporation, it is difficult to form a thin film like Ta 2 O 5 .
TiO 2 has a high melting point, so it is necessary to increase the power of the electron beam used to illuminate it and heat it to a high temperature. At this time, TiO 2 decomposes into Ti and O 2 , and this O 2 gas lowers the vacuum and the electron beam TiO 2 cannot be generated completely, and TiO 2 cannot be completely melted and is deposited as large particles.
ところで、Ta2O5はプレス成形後500℃以上で、
特に真空中で焼成すると、TaとO2ガスへの分解
が少なく、電子ビーム蒸着法で容易に薄膜化でき
るので、Ta2O5粉末にTiO2粉末を混合し、プレ
ス成形後500℃以上の温度で焼成したペレツトを
用いて電子ビーム蒸着法で低抵抗率（Ta2O5＋
TiO2）絶縁膜４及び６が容易に形成される。す
なわち（Ta2O5＋TiO2）のペレツトに照写する
とTa2O5は容易に溶融し、この溶けたTa2O5で
TiO2は一様に加熱溶融され、これらの混合物に
よる薄膜は結晶化されたものとなる。従つてこの
薄膜は高誘電率なものとなる。また、この薄膜中
のTa2O5及びTiO2はともに酸素欠損状態となる
ので低抵抗率を示す。実験によれば10-3〜10-7
Torrの真空度でEB蒸着すれば安定して107〜109
Ωm（104〜106Ｖ／cmにおいて）の低抵抗率を示す
（Ta2O5＋TiO2）絶縁膜が得られる。この際、
TiO2の量が多くなると電子ビーム蒸着ではO2ガ
スの放出が多くなり蒸着しにくくなるが、ペレツ
トを製作する時に焼成温度1000℃以上に高め真空
中で焼成するとペレツト成形時に混入した空気を
ペレツト中から放出できるので、蒸着中のガスの
放出を少なくでき、蒸着しやすくなる。しかし
TiO2の量が85重量％以上になると、O2ガスの放
出量が多く蒸着しにくくなる。 By the way, Ta 2 O 5 is heated at 500℃ or higher after press forming.
In particular , when fired in a vacuum, there is less decomposition into Ta and O 2 gas, and it can be easily made into a thin film using electron beam evaporation. Low resistivity (Ta 2 O 5 +
TiO 2 ) insulating films 4 and 6 are easily formed. In other words, when a pellet of (Ta 2 O 5 + TiO 2 ) is illuminated, Ta 2 O 5 easily melts, and this melted Ta 2 O 5
The TiO 2 is uniformly heated and melted, and the thin film made of the mixture becomes crystallized. Therefore, this thin film has a high dielectric constant. Furthermore, since both Ta 2 O 5 and TiO 2 in this thin film are in an oxygen-deficient state, they exhibit low resistivity. According to experiments 10 -3 to 10 -7
If EB evaporation is performed at a vacuum level of Torr, it will be stable at 10 7 to 10 9
A (Ta 2 O 5 +TiO 2 ) insulating film exhibiting a low resistivity of Ωm (at 10 4 to 10 6 V/cm) is obtained. On this occasion,
When the amount of TiO 2 increases, more O 2 gas is released during electron beam evaporation, making it difficult to evaporate. However, when making pellets, raising the firing temperature to 1000°C or higher and firing in a vacuum will remove air mixed in during pellet formation. Since the gas can be released from inside, the amount of gas released during vapor deposition can be reduced, making vapor deposition easier. but
When the amount of TiO 2 is 85% by weight or more, a large amount of O 2 gas is released, making it difficult to deposit.
上述の如くして形成される（Ta2O5＋TiO2）
絶縁膜４，６はそれぞれ500〜3500〓の膜厚に設
けられる。また発光層５はZnSを母材とし、Mn，
Tbなどを発光中心とした薄膜として電子ビーム
蒸着法またはスパツタ法で形成される。さらに背
面電極８は透明電極２に対して直角方向に配設さ
れており、この背面電極８と透明電極２との間に
交流電圧を印加すると、両電極の交差点部がドツ
トとして発光する。このようなELデイスプレイ
パネルにおいて、複数個のドツトをマトリクス状
に発光させ、文字及び図形を表示する。 Formed as described above (Ta 2 O 5 +TiO 2 )
The insulating films 4 and 6 are each provided with a thickness of 500 to 3500 mm. In addition, the light emitting layer 5 has ZnS as a base material, Mn,
It is formed by electron beam evaporation or sputtering as a thin film mainly made of Tb or the like. Further, the back electrode 8 is disposed perpendicularly to the transparent electrode 2, and when an alternating current voltage is applied between the back electrode 8 and the transparent electrode 2, the intersection of both electrodes emits light as a dot. In such an EL display panel, a plurality of dots are emitted in a matrix to display characters and figures.
（発明の効果）
以上、詳細に説明したように本発明によれば高
誘電率材料であるTiO2をTa2O5に混合させたペ
レツトを用いて電子ビーム蒸着法で（Ta2O5＋
TiO2）薄膜の形成ができ、この（Ta2O5＋TiO2）
薄膜を発光層の上、下面に設けたことにより、高
輝度発光が得られるTa2O5の特長を生かしかつ高
誘電率が得られるTiO2の特長をも生かしたELデ
イスプレイパネルが実現でき、高輝度発光かつ印
加電圧の低電圧化が図れるという利点がある。(Effects of the Invention) As described above in detail, according to the present invention, a pellet of TiO 2 (a high dielectric constant material) mixed with Ta 2 O 5 is used to produce (Ta 2 O 5 +
(TiO 2 ) thin film can be formed, and this (Ta 2 O 5 +TiO 2 )
By providing thin films on the upper and lower surfaces of the light-emitting layer, it is possible to create an EL display panel that takes advantage of the features of Ta 2 O 5 , which provides high luminance, and also takes advantage of the features of TiO 2 , which provides a high dielectric constant. It has the advantage of providing high-intensity light emission and reducing the applied voltage.
第１図は本発明の一実施例の構造を示す断面
図、第２図は従来のELデイスプレイパネルの構
造を示す断面図。
１……ガラス基板、２……透明電極、３……高
抵抗率SiO2絶縁膜、４……低抵抗率（Ta2O5＋
TiO2）絶縁膜、５……発光層、６……低抵抗率
（Ta2O5＋TiO2）絶縁膜、７……高抵抗率SiO2絶
縁膜、８……背面電極。
FIG. 1 is a sectional view showing the structure of an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a conventional EL display panel. 1... Glass substrate, 2... Transparent electrode, 3... High resistivity SiO 2 insulating film, 4... Low resistivity (Ta 2 O 5 +
TiO 2 ) insulating film, 5... light emitting layer, 6... low resistivity (Ta 2 O 5 +TiO 2 ) insulating film, 7... high resistivity SiO 2 insulating film, 8... back electrode.
Claims (1)
絶縁膜と、低抵抗率の第２の絶縁膜と、発光層
と、低抵抗率の第３の絶縁膜と、高抵抗率の第４
の絶縁膜と、背面電極とを順次積層してなるEL
デイスプレイパネルにおいて、前記第２の絶縁膜
及び前記第３の絶縁膜がTa2O5とTiO2との混合
物からなることを特徴とするELデイスプレイパ
ネル。 ２ 前記第２の絶縁膜及び前記第３の絶縁膜にお
いて、TiO2が85重量％以下含まれることを特徴
とする特許請求の範囲第１項記載のELデイスプ
レイパネル。 ３ 透明基板上に、透明電極と、高抵抗の第１の
絶縁膜と、低抵抗の第２の絶縁膜と、発光層と、
低抵抗の第３の絶縁層と、高抵抗の第４の絶縁膜
と、背面電極とを順次積層する各工程を具備する
ELデイスプレイパネルの製造方法において、
Ta2O5粉末と85重量％以下のTiO2粉末とを混合
し、この混合物をプレス成形後500℃以上の温度
で大気中もしくは真空中で焼成して作つたペレツ
トを用いて電子ビーム蒸着法により前記第２の絶
縁膜及び前記第３の絶縁膜を形成することを特徴
とするELデイスプレイパネルの製造方法。[Claims] 1. A transparent electrode, a first insulating film with high resistivity, a second insulating film with low resistivity, a light emitting layer, and a third insulating film with low resistivity on a transparent substrate. and a high resistivity fourth
EL is made by sequentially laminating an insulating film and a back electrode.
An EL display panel, wherein the second insulating film and the third insulating film are made of a mixture of Ta 2 O 5 and TiO 2 . 2. The EL display panel according to claim 1, wherein the second insulating film and the third insulating film contain 85% by weight or less of TiO 2 . 3. On a transparent substrate, a transparent electrode, a high resistance first insulating film, a low resistance second insulating film, and a light emitting layer,
Each step includes sequentially laminating a third insulating layer with low resistance, a fourth insulating film with high resistance, and a back electrode.
In the manufacturing method of EL display panel,
Electron beam evaporation method using pellets made by mixing Ta 2 O 5 powder and 85% by weight or less TiO 2 powder, press-molding this mixture, and firing it in the air or vacuum at a temperature of 500°C or higher. A method for manufacturing an EL display panel, characterized in that the second insulating film and the third insulating film are formed by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61106690A JPS62264594A (en) | 1986-05-12 | 1986-05-12 | El display panel and manufacture of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61106690A JPS62264594A (en) | 1986-05-12 | 1986-05-12 | El display panel and manufacture of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62264594A JPS62264594A (en) | 1987-11-17 |
| JPH0464159B2 true JPH0464159B2 (en) | 1992-10-14 |
Family
ID=14440038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61106690A Granted JPS62264594A (en) | 1986-05-12 | 1986-05-12 | El display panel and manufacture of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62264594A (en) |
-
1986
- 1986-05-12 JP JP61106690A patent/JPS62264594A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62264594A (en) | 1987-11-17 |
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