JPH0465123A - Method and apparatus for wiring formation by laser assisted cvd process - Google Patents
Method and apparatus for wiring formation by laser assisted cvd processInfo
- Publication number
- JPH0465123A JPH0465123A JP17826490A JP17826490A JPH0465123A JP H0465123 A JPH0465123 A JP H0465123A JP 17826490 A JP17826490 A JP 17826490A JP 17826490 A JP17826490 A JP 17826490A JP H0465123 A JPH0465123 A JP H0465123A
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- Prior art keywords
- sample
- wiring
- laser
- gas
- light
- Prior art date
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Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000001182 laser chemical vapour deposition Methods 0.000 title claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 8
- 238000010494 dissociation reaction Methods 0.000 claims description 7
- 208000018459 dissociative disease Diseases 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000000977 initiatory effect Effects 0.000 abstract description 10
- 239000005357 flat glass Substances 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 239000012159 carrier gas Substances 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 229910008940 W(CO)6 Inorganic materials 0.000 abstract 3
- 239000002994 raw material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明はレーザＣＶＤ法による配線形成方法及びその装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a method and apparatus for forming wiring by laser CVD.
従来技術
従来のレーザを光源とする光ＣＶ Ｄ （Ｃｈｅｍｉｃ
ａｌＶａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ ）技術、すな
わちレーザＣＶＤ技術としては、大別して次の２通りの
方式がある。Prior art Optical CVD (Chemical CVD) using a conventional laser as a light source
The alVapor Deposition technology, that is, the laser CVD technology, can be broadly classified into the following two types.
１つは、レーザ光を試料表面に集光することにより生じ
る試料表面の局所加熱を利用して、原料化合物骨・子の
熱解離反応に基づいて導電性薄膜を形成する技術である
。One is a technique of forming a conductive thin film based on a thermal dissociation reaction of raw material compound skeletons using local heating of the sample surface caused by focusing laser light on the sample surface.
この場合、レーザとしては通常可視または赤外域のもの
が用いられる。この技術は主に１．ｓｉ上に導体配線を
直接描画することを目的としており、種々の研究開発が
行われつつある。In this case, a laser in the visible or infrared region is usually used. This technology mainly consists of 1. The aim is to draw conductor wiring directly on Si, and various research and development efforts are underway.
例えば、 Ｊ、Ｇ、ＢＩａｃｋ ｅｔ ａｌ、、＾ｐｐ
ｌｎ、 Ｐｈｙｓ、 Ｌｅｔｔ、 ５０，１９８７
． ”Ｓｕｐｐｌｅｍｅｎｔａｌ ｍｕｌｔｉｌｅｖ
ｌ Ｉｎｔｅｒｃｏｎｎｅｃｔｓ ｂｙ １ａｓｅｒ
ｄｉｒｅｃｔ ｗｒｉｔｉｎｇ： ＾ｐｐｌｊｃａＮ
ｏｎ ｔｏ−ＧａＡｓ ｄｉｇｉｔａｌ ｉｎｔｅｇｒ
ａｔｅｄ ｃｉｒｃｕｉｔｓ″、 ｐｉ０１６〜１０１
８．や、森重他、レーザ協会会報１．Ｖｏｌ、１２．Ｎ
ｏ２ ｒレーザ直描配線技術のＬＳＩ応用」にその報告
が開示されている。For example, J.G.BIack et al., ^pp
In, Phys, Lett, 50, 1987
．． ”Supplemental multilev
l Interconnects by 1aser
Direct writing: ^ppljcaN
on to-GaAs digital integrator
ated circuits'', pi016~101
8. , Morishige et al., Laser Association Bulletin 1. Vol, 12. N
The report is disclosed in "LSI Application of O2R Laser Direct Wiring Technology".
他の１つは、紫外域に発振源を有するレーザを使用し、
主として原料化合物分子の光吸収解離反応を利用して薄
膜を形成する技術である。The other one uses a laser with an oscillation source in the ultraviolet region,
This is a technology that forms thin films mainly by utilizing light absorption dissociation reactions of raw material compound molecules.
この技術は、半導体ウェハー全面への一括成膜工程（特
に絶縁膜）の低温プロセス化を意図して開発されてきた
ものであるが、パターン転写光学系を用いてアルミニウ
ム配線を形成する試みもなされている。This technology was developed with the intention of reducing the temperature of the batch film formation process (particularly insulating films) over the entire surface of a semiconductor wafer, but attempts have also been made to form aluminum wiring using a pattern transfer optical system. ing.
例えば、Ｇ、Ｓ、Ｈｉｇａｓｈｊ ｅｔ ａｌ、、 １
９８６． Ｄｒｙ Ｐｒｏｃｅｓｓ Ｓｙｍｐｏｓｊｕ
ｍ予稿集、 ｐｐ、１２０．に開示されている技術があ
る。For example, G. S. Higashj et al., 1
986. Dry Process Symposium
m Proceedings, pp, 120. There is a technology disclosed in
これ等従来のレーザＣＶＤ技術を用いた導体配線形成技
術には、夫々に以下の如き問題点が存在する。These conventional conductor wiring formation techniques using laser CVD techniques have the following problems.
先ず、前者の熱解離反応を利用した技術では、導体配線
をＬＳＩ上に直接描画する手段としては現在主流となっ
ている技術であるが、描画開始時点での熱解離反応の種
物質の形成（イニシェーション； Ｉｎ１ｔｉａｔｉｏ
ｎ）の制御性に関して問題がある。First, the former technique, which utilizes thermal dissociation reactions, is currently the mainstream technique for drawing conductor wiring directly onto LSIs; Initiation; In1tiatio
There is a problem regarding the controllability of n).
すなわち、描画開始時にレーザ光の強度を描画中の１．
５〜２倍程度に設定して、導電性物質の成長のための種
物質を形成するようになっているが、レーザ光の強度か
大きいために、−度反応が開始されると、爆発的に種物
質の堆積が進行する危険があり、好ましくない。That is, at the start of drawing, the intensity of the laser beam is adjusted to 1.
The laser beam is set to about 5 to 2 times as much to form a seed material for the growth of the conductive material, but due to the high intensity of the laser light, when a -degree reaction starts, it becomes explosive. This is undesirable as there is a risk that seed material will accumulate on the surface.
また、耐熱性の低い試料の場合には、種物質を形成し得
るに十分な強度のレーザ光を照射することができず、イ
ニシェーションが不可能となる場合もある。Furthermore, in the case of a sample with low heat resistance, it may not be possible to irradiate the sample with a laser beam of sufficient intensity to form a seed material, making initiation impossible.
次に、後者の主として光解離反応を利用する技術では、
イニシェーションに関しての上述の如き問題はないが、
次の様な欠点がある。Next, in the latter technique, which mainly utilizes photodissociation reactions,
There are no problems like the ones mentioned above regarding initiation, but
It has the following drawbacks.
すなわち、試料表面の吸着層だけでなく、気相中で、も
反応が生ずるために、周辺への堆積が発生して、電気的
リークの原因となると共に、レーザ光を導入するための
窓ガラスへも堆積が生じ、窓ガラスのくもりを招来する
ので、定期的に洗浄や交換を必要とする。In other words, reactions occur not only on the adsorption layer on the sample surface, but also in the gas phase, resulting in deposition around the sample, causing electrical leakage, as well as on the window glass for introducing the laser beam. Deposits also occur on the windows, causing fogging of the windows, requiring periodic cleaning and replacement.
また、加熱効果が不充分であるため、形成後の膜質が悪
く、電気抵抗が高くなってしまうという欠点もある。Furthermore, since the heating effect is insufficient, the film quality after formation is poor and the electrical resistance is high.
発明の目的
そこで、本発明はかかる従来技術の欠点を解決すべくな
されたものであって、その目的とするところは、安定し
た条件下で良質の導電性薄膜を形成することが可能なレ
ーザＣＶＤ法による配線形成方法及びその装置を提供す
ることである。Purpose of the Invention Therefore, the present invention was made to solve the drawbacks of the prior art, and its purpose is to develop a laser CVD method that is capable of forming a high-quality conductive thin film under stable conditions. An object of the present invention is to provide a method for forming wiring by a method and an apparatus therefor.
発明の構成
本発明によるレーザＣＶＤ法による配線形成方法は、解
離反応により導電性物質を形成するための化合物気体を
含む雰囲気中に試料を配置し、この試料表面に紫外光を
照射して導電性薄膜形成用の種物質を生成し、しかる後
にレーザＣＶＤ法により配線形成を行うことを特徴とし
ている。Structure of the Invention In the wiring formation method using the laser CVD method according to the present invention, a sample is placed in an atmosphere containing a compound gas for forming a conductive substance by a dissociation reaction, and the surface of the sample is irradiated with ultraviolet light to form a conductive substance. The method is characterized in that a seed material for forming a thin film is generated, and then wiring is formed by a laser CVD method.
本発明によるレーザＣＶＤ法による配線形成装置は、解
離反応により導電性物質を形成するための化合物体を含
む雰囲気を有するチェンバと、このチェンバ内に配置さ
れた試料の表面に対して紫外光を照射する紫外光照射手
段と、この紫外光の照射後に前記試料に対して配線形成
用のレーザ光を照射するレーザ光照射手段とを含むこと
を特徴としている。The wiring forming apparatus using the laser CVD method according to the present invention includes a chamber having an atmosphere containing a compound substance for forming a conductive substance through a dissociation reaction, and irradiating ultraviolet light onto the surface of a sample placed within the chamber. and a laser light irradiation means that irradiates the sample with laser light for wiring formation after irradiation with the ultraviolet light.
実施例 以下、本発明の実施例を図面を用いて詳細に説明する。Example Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の実施例の構成を示す模式図である。本
実施例では、レーザＣＶＤ用のレーザ光源としてＡ「レ
ーザを使用し、配線用原料化合物としてタングステンカ
ルボニルＷ （ＣＯ） ６ ヲ使用する。FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention. In this embodiment, an A laser is used as a laser light source for laser CVD, and tungsten carbonyl W (CO) 6 is used as a raw material compound for wiring.
この原料化合物Ｗ（Ｃｏ）６は常温では固体であるが、
リザーバと呼ばれる容器２中で、ヒータ３により加熱さ
れてガス化されている。このときの蒸気圧は６３℃で約
Ｉ Ｔｏｒｒである。ガス化したＷ（ＣＯ）６の蒸気圧
が小さいので、キャリアガス４と混合してチェンバ５に
送られる。このキャリアガス４としてはアルゴン等の希
ガスを用いる。This raw material compound W(Co)6 is solid at room temperature,
It is heated and gasified by a heater 3 in a container 2 called a reservoir. The vapor pressure at this time is about I Torr at 63°C. Since the vapor pressure of gasified W(CO) 6 is low, it is mixed with carrier gas 4 and sent to chamber 5 . As this carrier gas 4, a rare gas such as argon is used.
チェンバ５内の原料化合物雰囲気中に試料である半導体
基板７が設置されている。この半導体基板７は、その表
面にＷ（Ｃｏ）６が再凝集しないように、雰囲気ガスの
温度と略等しくなる様に加熱機構８により加熱される。A semiconductor substrate 7, which is a sample, is placed in a raw material compound atmosphere in a chamber 5. This semiconductor substrate 7 is heated by a heating mechanism 8 so that the temperature is approximately equal to that of the atmospheric gas so that W(Co) 6 does not re-agglomerate on its surface.
Ａｒレーザ光（波長５１４ 、５ ｍｍまたは４８８ｍ
ｍにで使用）は光源１４より発射され、ビームエキスパ
ンダ１３、ダイクロイックミラー１２を介して対物レン
ズ１１へ入射される。この対物レンズ］１により窓ガラ
ス９を介して半導体基板７上に集光され、この集光部に
ダンゲステンが成長し堆積する。Ar laser light (wavelength 514, 5 mm or 488 m
(used in m) is emitted from a light source 14 and enters an objective lens 11 via a beam expander 13 and a dichroic mirror 12. This objective lens] 1 focuses the light onto the semiconductor substrate 7 through the window glass 9, and dungesten grows and deposits on this light focusing portion.
従って、ＸＹステージ６により試料７を移動制御するこ
とにより、配線状にタングステン薄膜を形成することが
できることになる。Therefore, by controlling the movement of the sample 7 using the XY stage 6, it is possible to form a tungsten thin film in the shape of a wire.
尚、１０は排ガス処理部であり、１５はモニタ用の接眼
レンズ、１６はモニタ用のＴＶ左カメラある。In addition, 10 is an exhaust gas processing section, 15 is an eyepiece for monitoring, and 16 is a TV left camera for monitoring.
そして、本実施例では、更にチェンバ５内に紫外光を発
生するランプ１が付加されており、半導体基板７の少く
とも主表面全体に紫外光を照射可能となっている。In this embodiment, a lamp 1 that generates ultraviolet light is further added in the chamber 5, so that at least the entire main surface of the semiconductor substrate 7 can be irradiated with ultraviolet light.
Ａｒレーザ光による配線描画の前に、この紫外ランプ１
を用いて試料７に対するイニシェーション処理を行うの
である。This ultraviolet lamp 1 is used before wiring drawing with Ar laser light.
The initiation process for the sample 7 is performed using the .
第３図の動作フローを参照しつつ第１図の装置による配
線形成処理動作を説明する。先ず、試料７をチェンバ５
内に入れた後、チェンバ内雰囲気を希ガスにて置換する
（ステップ２１）。そして、原料化合物であるＷ（Ｃｏ
）６をリザーバ２内でガス化してチェンバ５内へこれを
導入する（ステップ２２）。このときの温度は６３℃で
あり、蒸気圧は約Ｉ Ｔｏｒｒとする。The wiring forming processing operation by the apparatus shown in FIG. 1 will be described with reference to the operational flow shown in FIG. 3. First, sample 7 is placed in chamber 5.
After entering the chamber, the atmosphere inside the chamber is replaced with a rare gas (step 21). Then, the raw material compound W(Co
) 6 in the reservoir 2 and introduces it into the chamber 5 (step 22). The temperature at this time is 63° C., and the vapor pressure is approximately I Torr.
この時点で紫外ランプ１を点灯して紫外光を半導体基板
７の一生表面全体に亘って照射する（ステップ２３）。At this point, the ultraviolet lamp 1 is turned on to irradiate the entire surface of the semiconductor substrate 7 with ultraviolet light (step 23).
このときの紫外光の照射強度は数ｍＷ／ｃ−から数十ｍ
Ｗ／ｃ−のオーダの微弱なもので十分である。このステ
ップ２３では、後のステップでの配線形成用の種物質を
形成するのが目的であるために、微弱な紫外光で十分と
なる。The irradiation intensity of the ultraviolet light at this time is from several mW/c to several tens of m
A weak one on the order of W/c- is sufficient. In this step 23, since the purpose is to form a seed material for forming wiring in a later step, weak ultraviolet light is sufficient.
予め設定された時間（例えば、約１０分位）の間紫外光
を照射したならば（ステップ２４）、原料ガスを一度チ
ェンバ５から排気しくステップ２５）、再度同一条件で
同一の原料ガスをチェンバ５内へ導入して（ステップ２
６）、Ａｒレーザ光源１４によるレーザ照射を行い（ス
テップ２７）、レーザＣＶＤによる配線形成をなすので
ある（ステップ２８．２９）。After irradiating the ultraviolet light for a preset time (for example, about 10 minutes) (step 24), the source gas is once exhausted from the chamber 5 (step 25), and the same source gas is poured into the chamber again under the same conditions. 5 (Step 2)
6) Laser irradiation is performed using the Ar laser light source 14 (step 27), and wiring is formed by laser CVD (steps 28 and 29).
イニシェーション時とレーザＣＶＤによる配線形成時と
で、原料ガスを入換えるのは、イニシェーション時に気
相中に生じた活性な物質を除去するためである。The reason why the raw material gas is exchanged between the initiation and the wiring formation by laser CVD is to remove active substances generated in the gas phase during the initiation.
レーザＣＶＤ法による配線処理時においては、原料ガス
Ｗ（Ｃｏ）６は分圧Ｉ Ｔｏｒｒであり、試料表面上で
のＡｒレーザ光強度１．ＯＯ＋ｎＷ 、 レーザ集光
径２μｍのとき、５〜１０ｐｍ７’ｓの速度でタングス
テン配線が直接描画されることになる。この場合、紫外
ランプ光によるイニシェーションを既に行っているので
、配線直描開始時にＡｒレーザ光の強度を大とする必要
がなくなるのである。During wiring processing using the laser CVD method, the raw material gas W(Co) 6 has a partial pressure of I Torr, and the Ar laser light intensity on the sample surface is 1. When OO+nW and the laser condensing diameter is 2 μm, tungsten wiring is directly drawn at a speed of 5 to 10 pm7's. In this case, since the initiation with ultraviolet lamp light has already been performed, there is no need to increase the intensity of the Ar laser light when starting direct wiring drawing.
イニシェーション時に使用する紫外光は上述の如く、微
弱で良いために、紫外レーザを用いた光解離反応を主と
するＣＶＤ法と異なり、窓ガラス９への堆積はほとんど
問題とならない。As mentioned above, the ultraviolet light used at the time of initiation may be weak, so unlike the CVD method, which mainly uses a photodissociation reaction using an ultraviolet laser, deposition on the window glass 9 poses almost no problem.
第２図は本発明の他の実施例の構成を示す模式図であり
、第１図と同等部分は同一符号により示している。本実
施例では、紫外光を発生するランプ１（第１図）の代り
に、Ａｒレーザ１４からの出力光２４を波長変換器２１
により逓倍して紫外レーザ光２３を得るものである。FIG. 2 is a schematic diagram showing the configuration of another embodiment of the present invention, and parts equivalent to those in FIG. 1 are designated by the same reference numerals. In this embodiment, instead of the lamp 1 (FIG. 1) that generates ultraviolet light, the output light 24 from the Ar laser 14 is transferred to the wavelength converter 21.
The ultraviolet laser beam 23 is obtained by multiplying the ultraviolet laser beam 23.
この紫外レーザ光２３と可視レーザ光２４との切換えは
、ミラー２２の光路への出し入れにより行うことができ
る。また、紫外レーザ光２３を半導体基板７の一生表面
全体に亘って照射するには、対物レンズ１１のピントを
ずらしてデフォーカス状態にした上で、ＸＹステージ６
によって試料７を移動して走査すれば十分である。Switching between the ultraviolet laser beam 23 and the visible laser beam 24 can be performed by moving the mirror 22 in and out of the optical path. In addition, in order to irradiate the entire surface of the semiconductor substrate 7 with the ultraviolet laser beam 23, the focus of the objective lens 11 is shifted to bring it into a defocused state, and then the XY stage 6
It is sufficient to move and scan the sample 7 according to the following.
尚、上記実施例における数値例の各々は単なる例示にす
ぎず、種々の変更が可能であることは勿論である。It should be noted that each of the numerical examples in the above embodiments is merely an illustration, and it goes without saying that various changes are possible.
発明の効果
以上述べた如く、本発明によれば、配線形成前に微弱な
紫外光を試料の全体に照射してイニシェーションを行っ
ておき、種物質を予め生成しておくようにしたので、安
定した条件でレーザＣＶＤ法による配線形成を行うこと
ができるという効果がある。Effects of the Invention As described above, according to the present invention, the entire sample is irradiated with weak ultraviolet light for initiation to generate a seed material in advance before wiring is formed. This has the advantage that wiring can be formed by laser CVD under stable conditions.
第１図及び第２図は本発明の各実施例の構成を示す模式
図、第３図は本発明の実施例の動作を示すフローチャー
トである。
主要部分の符号の説明
１・・・・・・紫外ランプ
５・・・・・・チェンバ
７・・・・・・半導体基板（試料）
１４・・・・・・Ａｒレーザ
２１・・・・・・波長変換器
２３・・・・・・紫外レーザ光1 and 2 are schematic diagrams showing the configuration of each embodiment of the present invention, and FIG. 3 is a flowchart showing the operation of the embodiment of the present invention. Explanation of symbols of main parts 1... Ultraviolet lamp 5... Chamber 7... Semiconductor substrate (sample) 14... Ar laser 21...・Wavelength converter 23... Ultraviolet laser light
Claims (2)
物気体を含む雰囲気中に試料を配置し、この試料表面に
紫外光を照射して導電性薄膜形成用の種物質を生成し、
しかる後にレーザＣＶＤ法により配線形成を行うことを
特徴とするレーザＣＶＤ法による配線形成方法。(1) A sample is placed in an atmosphere containing a compound gas for forming a conductive substance through a dissociation reaction, and the surface of the sample is irradiated with ultraviolet light to generate a seed substance for forming a conductive thin film,
1. A method for forming wiring using a laser CVD method, characterized in that the wiring is formed by a laser CVD method thereafter.
物体を含む雰囲気を有するチェンバと、このチェンバ内
に配置された試料の表面に対して紫外光を照射する紫外
光照射手段と、この紫外光の照射後に前記試料に対して
配線形成用のレーザ光を照射するレーザ光照射手段とを
含むことを特徴とするレーザＣＶＤ法による配線形成装
置。(2) a chamber having an atmosphere containing a compound for forming a conductive substance through a dissociation reaction; an ultraviolet light irradiation means for irradiating ultraviolet light onto the surface of a sample placed in the chamber; A wiring forming apparatus using a laser CVD method, comprising: a laser beam irradiation unit that irradiates the sample with a laser beam for wiring formation after irradiation with light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2178264A JP2723658B2 (en) | 1990-07-05 | 1990-07-05 | Wiring forming method by laser CVD method and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2178264A JP2723658B2 (en) | 1990-07-05 | 1990-07-05 | Wiring forming method by laser CVD method and apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0465123A true JPH0465123A (en) | 1992-03-02 |
| JP2723658B2 JP2723658B2 (en) | 1998-03-09 |
Family
ID=16045451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2178264A Expired - Lifetime JP2723658B2 (en) | 1990-07-05 | 1990-07-05 | Wiring forming method by laser CVD method and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2723658B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018131438A1 (en) * | 2017-01-11 | 2018-07-19 | 株式会社ブイ・テクノロジー | Wiring correction device and wiring correction method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60241219A (en) * | 1984-05-16 | 1985-11-30 | Nec Corp | Method for forming thin film by utilizing laser |
| JPS62222073A (en) * | 1986-03-24 | 1987-09-30 | Mitsubishi Electric Corp | Device for forming thin film |
-
1990
- 1990-07-05 JP JP2178264A patent/JP2723658B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60241219A (en) * | 1984-05-16 | 1985-11-30 | Nec Corp | Method for forming thin film by utilizing laser |
| JPS62222073A (en) * | 1986-03-24 | 1987-09-30 | Mitsubishi Electric Corp | Device for forming thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018131438A1 (en) * | 2017-01-11 | 2018-07-19 | 株式会社ブイ・テクノロジー | Wiring correction device and wiring correction method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2723658B2 (en) | 1998-03-09 |
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