JPH0467355U - - Google Patents

Info

Publication number
JPH0467355U
JPH0467355U JP1990110991U JP11099190U JPH0467355U JP H0467355 U JPH0467355 U JP H0467355U JP 1990110991 U JP1990110991 U JP 1990110991U JP 11099190 U JP11099190 U JP 11099190U JP H0467355 U JPH0467355 U JP H0467355U
Authority
JP
Japan
Prior art keywords
capacitor
low resistance
resistors
capacitors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990110991U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990110991U priority Critical patent/JPH0467355U/ja
Publication of JPH0467355U publication Critical patent/JPH0467355U/ja
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図a,bは本考案の一実施例の平面図およ
びA−A′の断面図、第2図a,bは本考案の他
の実施例の平面図およびB−B′断面図、第3図
a,bは従来のマスタスライス装置の一例の平面
図および断面図である。 1……Al電極、2……コンタクト、4……エ
ピタキシヤル、5……サブストレート、6……絶
縁層、7……P+層、8……N+層。
Figures 1a and b are a plan view and a cross-sectional view taken along line A-A' of one embodiment of the present invention, Figures 2 a and b are a plan view and a cross-sectional view taken along line B-B' of another embodiment of the present invention, FIGS. 3a and 3b are a plan view and a sectional view of an example of a conventional master slicing device. DESCRIPTION OF SYMBOLS 1... Al electrode, 2... Contact, 4... Epitaxial, 5... Substrate, 6... Insulating layer, 7... P + layer, 8... N + layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ウエーハ全面にトランジスタ、抵抗、容量等が
拡散されたマスタスライス装置において、前記容
量を低抵抗として共用し、更に容量の周辺にアル
ミニウムコンタクトを設け低抵抗値を可変出来る
ようにしたことを特徴とする半導体装置。
In a master slicing device in which transistors, resistors, capacitors, etc. are diffused over the entire surface of a wafer, the capacitor is shared as a low resistance, and an aluminum contact is further provided around the capacitor so that the low resistance value can be varied. Semiconductor equipment.
JP1990110991U 1990-10-23 1990-10-23 Pending JPH0467355U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990110991U JPH0467355U (en) 1990-10-23 1990-10-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990110991U JPH0467355U (en) 1990-10-23 1990-10-23

Publications (1)

Publication Number Publication Date
JPH0467355U true JPH0467355U (en) 1992-06-15

Family

ID=31858402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990110991U Pending JPH0467355U (en) 1990-10-23 1990-10-23

Country Status (1)

Country Link
JP (1) JPH0467355U (en)

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