JPH046790B2 - - Google Patents
Info
- Publication number
- JPH046790B2 JPH046790B2 JP58203487A JP20348783A JPH046790B2 JP H046790 B2 JPH046790 B2 JP H046790B2 JP 58203487 A JP58203487 A JP 58203487A JP 20348783 A JP20348783 A JP 20348783A JP H046790 B2 JPH046790 B2 JP H046790B2
- Authority
- JP
- Japan
- Prior art keywords
- titanium carbide
- film
- coating
- base material
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Description
〔発明の利用分野〕
本発明はチタンカーバイド膜を被覆する方法に
関し、特に、該融合装置の真空容器の第一炉壁と
してMo、Ｗ、Ni基合金等の反応面側に活性化反
応性物理蒸着法によりチタンカーバイド膜を前記
金属あるいは合金上に、十数μｍ以上の厚さでし
かも密着性に優れた状態に被覆する方法に関する
ものである。
〔発明の背景〕
従来、金属あるいは金属合金材料の耐食性、耐
磨耗性、表面硬化を付加する目的で、チタンカー
バイド、チタンナイトライド、パナジウムカーバ
イドなどのセラミツク膜が利用され、それらの被
覆方法として、化学気相法、イオンプレーテイン
グ法、スパツタリング法等いくつかある。そのな
かでもイオンプレーテイング法の一つであるホロ
ーカソード放電（以下HCDと呼ぶ）法は、基材
の温度を比較的低くし、しかもはやい折出速度で
チタンカーバイド膜を堆積できるため非常に有力
な方法である。
しかるに最近の核融合装置第一壁の低Ｚ化にか
んがみ、これらセラミツクス材料の厚膜（＋数μ
以上）をコーテイングする要求があるが、この目
的でチタンカーバイドの厚膜（＋数μｍ以上）を
基材上に密着性が良い状態に被覆するのは容易で
ない。特にチタンカーバイド膜をチタンカーバイ
ドと比べ熱膨張係数が著しく大きい基材に＋数μ
ｍ以上の厚膜に被覆することは甚だ困難である。
密着性が悪い場合には膜の剥離が生じるが、その
原因の一つは生成されたチタンカーバイド膜に存
在する結晶のひずみによる残留応力である。それ
故基材上に折出する結晶のひすみを緩和し残留応
力を小さくすることにより、基材と被膜との整合
性を向上させ、密着性を増大させることが必要で
あり、本発明はこの問題を解決したものである。
HCD活性化反応性蒸着によるチタンカーバイ
ド被覆方法は、まず不活性ガス（たとえばアルゴ
ンカス）を導入してHCD放電を生じさせ、ホロ
ーカソードから電子ビームをチタン蒸発源に引き
出してチタンを加熱溶融して蒸発させる。それと
同時に反応ガスとして炭化水素ガス（たとえばア
セチレンガス）を導入すると基板上に炭化チタン
膜が形成される。HCD法では大電流大電力の効
果により蒸発源より多量の金属イオンを発生させ
ることができ、そのことにより反応効率が高く、
従つて化合物膜が速い折出速度で得られることが
知られており、そのとき基板には一般に蒸発源に
対して10〜100Vの負の一定電圧を印加すること
を、特徴としている。他のイオンプレーテイング
と同様に基材の負電圧によりチタンイオン及びカ
ーボンイオンが基材に向けて強引に引き付けら
れ、その結果密着性の優れたチタンカーバイド膜
が形成される。しかし密着性が良好である状態を
保つには、この従来の方法ではチタンカーバイド
膜を数μｍ以下の薄い膜厚にする必要がある。そ
れ以上の膜厚では、印加電圧によるチタンイオン
の誘引が逆効果となつて、膜の内部ひずみが大き
くなり、蓄積される内部残留応力のために基材と
の整合が悪く、機械的あるいは熱的衝撃により膜
の剥離が生じる場合がある。この整合性の悪さ
は、チタンカーバイド膜と基材と熱膨張係数の違
いが大きいほど密着性に及ぼす影響が大きく、ま
た基材に残されている歪（たとえば打ち疵や不均
一な研削加工溝など）が大きいほど密着性に悪影
響を及ぼす。
〔発明の目的〕
本願発明は上述の点に鑑みなされたもので、そ
の目的とするところは、基材の上にチタンカーバ
イド厚膜を該基板との整合性を損うことなく密着
性の良好な状態で被覆することのできるチタンカ
ーバイド厚膜の被覆方法を提供するにある。
〔発明の概要〕
本発明は従来法における被覆開始時から、基材
又は基材取り付けクレートにかける印加電圧を一
定に保持していたのに代え、堆積するチタンカー
バイドの膜厚に応じて印加電圧を変化させること
により結晶のひずみが極めて小さいチタンカーバ
イド膜を得、その目的を達し得た。
本発明の方法をホローカソード放電を利用した
反応性イオンプレーテイング法に基づいて説明す
る。基材が所定の温度に加熱された後に、真空槽
の圧力が８×10-3Torrになる程度のアルゴンガ
スをホローカソードから導入してホローカソード
放電を持続させる。ホソーカソード電子銃からの
電子照射（電圧25〜30V、電流100〜300A）によ
り金属チタンを溶融して蒸発させると同時に反応
ガスを８×10-4Torr程度として導入する。これ
により0.2〜0.4μｍ／minのはやい折出速度で基材
上にチタンカーバイド膜が形成されるが、基材へ
の印加電圧のかけ方が本発明の特徴であり、それ
を第１図に示す。即ち被覆の当初は基材にマイナ
ス150〜250Vの一定電圧を印加してチタンイオン
の積極的な引き込みを行ない基材とチタンカーバ
イド膜との密着性を増進させる。密着性のよいチ
タンカーバイド膜が数ミクロンに達した後、更に
チタンカーバイド膜が１〜２ミクロン堆積するま
で印加電圧を徐々に低下させていき、それ以後マ
イナス5V低下の低い電圧を一定に保持し、目的
の膜厚に達するまで保持する。言い換えると、第
１図において（）領域で生成される膜は基材海
面との密着性を良くする役割をはたすが、膜には
イオンの打込みにより結晶の歪が大きく発生す
る。これを次第に緩和しているのが（）領域で
形成される膜でバツフア層の役目をはたしてい
る。（）領域では基材でのチヤージアツプを解
消するに足るだけの低い負電圧の印加にとどめ
る。そのようにすればイオンの衝突によるエネル
ギーが小さく膜に与える不均一歪みの影響もなく
なり、形成される膜の内部残留応力が非常に少な
い。そのため基材との整合性が良くなり密着性の
良好な状態が保たれる。このようにして被覆を行
なうと、厚膜のチタンカーバイド膜をTiCに比べ
て熱膨張係数の大きい基材の上にも密着性よく堆
積させることができる。図中、ａは数μｍ、ｂ−
ａは数μｍである。
〔発明の実施例〕
本方法によりニツケル基耐熱合金インコネル
625基材上にチタンカーバイド膜の被覆を行ない
膜の密着性を調べた。なお、報告されている熱膨
張係数はチタンカーバイド7.4×10-6／℃（25〜
800℃）、インコネル625 14〜17×10-6／℃（25〜
870℃）でインコネル625の方が非常に大きい。基
材に用いたインコネル625の表面にシエーバー加
工を施して意図的に基材表面に歪が生じるように
し、その上に膜を堆積させた。
本発明を実施する際の装置の一例を第２図に示
す。このHCD活性化反応性蒸着法を用いて、本
方法および従来法の２方法によつて被覆を行ない
比較検討した。インコネル625特有の時効による
基材の脆化をさける為、基材の温度を500℃以下
におさえた。本実施例では、基材の印加電圧を
（）領域ではマイナス200V、（）領域ではマ
イナス200Vからマイナス2Vに変化させ、（）
領域ではマイナス2Vの一定電圧を印加し、約80
分で膜厚25ミクロンのチタンカーバイド膜を得
た。被覆条件を第１表に示す。基材の印加電圧以
外は全て同じである。尚、印加電圧については、
マイナス150〜250V、及び０〜5Vの間で変化さ
せても以下に述べるチタンカーバイド膜の特性に
大きなちがいは認められない。
チタンカーバイド膜の密着性の目安としては、
被覆直後および液体窒素浸漬後の表面観察により
被覆の剥離状態の調査、及びＸ線回折における回
[Field of Application of the Invention] The present invention relates to a method of coating a titanium carbide film, and in particular, to a method of coating a titanium carbide film, in particular, a method of coating a titanium carbide film on the reactive surface side of a Mo, W, Ni-based alloy, etc. as the first furnace wall of a vacuum vessel of the fusion device. The present invention relates to a method of coating the metal or alloy with a titanium carbide film using a vapor deposition method to a thickness of more than ten micrometers and with excellent adhesion. [Background of the Invention] Conventionally, ceramic films such as titanium carbide, titanium nitride, and panadium carbide have been used for the purpose of adding corrosion resistance, abrasion resistance, and surface hardening to metals or metal alloy materials. There are several methods such as , chemical vapor phase method, ion plating method, and sputtering method. Among these, the hollow cathode discharge (hereinafter referred to as HCD) method, which is one of the ion plating methods, is very effective because it allows the substrate temperature to be relatively low and titanium carbide films can be deposited at a fast deposition rate. This is a great method. However, in view of the recent trend towards lowering the Z of the first wall of fusion devices, thicker films (+ several μm) of these ceramic materials have been developed.
However, it is not easy to coat a substrate with a thick film (more than a few μm) of titanium carbide with good adhesion for this purpose. In particular, titanium carbide film is applied to the base material, which has a significantly larger coefficient of thermal expansion than titanium carbide.
It is extremely difficult to coat a film thicker than m.
If the adhesion is poor, the film will peel off, and one of the reasons for this is residual stress due to crystal strain present in the produced titanium carbide film. Therefore, it is necessary to improve the consistency between the base material and the coating and increase the adhesion by relaxing the strain of the crystals deposited on the base material and reducing the residual stress. This problem was solved. The titanium carbide coating method by HCD-activated reactive vapor deposition first introduces an inert gas (for example, argon gas) to generate HCD discharge, and then draws an electron beam from the hollow cathode to the titanium evaporation source to heat and melt the titanium and evaporate it. let At the same time, when a hydrocarbon gas (eg, acetylene gas) is introduced as a reactive gas, a titanium carbide film is formed on the substrate. In the HCD method, a large amount of metal ions can be generated from the evaporation source due to the effect of high current and high power, which results in high reaction efficiency.
Therefore, it is known that a compound film can be obtained at a high deposition rate, which is characterized in that a constant negative voltage of 10 to 100 V is generally applied to the substrate with respect to the evaporation source. Similar to other ion plating methods, titanium ions and carbon ions are forcibly attracted toward the substrate by the negative voltage applied to the substrate, resulting in the formation of a titanium carbide film with excellent adhesion. However, in order to maintain good adhesion, this conventional method requires that the titanium carbide film be made as thin as several μm or less. If the film is thicker than this, the attraction of titanium ions by the applied voltage will have the opposite effect, and the internal strain of the film will increase, and the internal residual stress that accumulates will cause poor alignment with the base material, resulting in mechanical or thermal damage. The film may peel off due to physical impact. This poor consistency has a greater effect on adhesion as the difference in coefficient of thermal expansion between the titanium carbide film and the base material increases. etc.) is larger, the worse the adhesion is affected. [Object of the Invention] The present invention has been made in view of the above points, and its object is to form a titanium carbide thick film on a substrate with good adhesion without impairing the consistency with the substrate. It is an object of the present invention to provide a method for coating a titanium carbide thick film that can be coated in a stable state. [Summary of the Invention] Instead of the conventional method in which the applied voltage applied to the substrate or the substrate mounting crate is held constant from the start of coating, the applied voltage is adjusted according to the thickness of the titanium carbide film to be deposited. By changing the , we were able to obtain a titanium carbide film with extremely low crystal strain and achieve this goal. The method of the present invention will be explained based on a reactive ion plating method using hollow cathode discharge. After the base material is heated to a predetermined temperature, argon gas is introduced from the hollow cathode to the extent that the pressure in the vacuum chamber becomes 8×10 -3 Torr to sustain hollow cathode discharge. Titanium metal is melted and evaporated by electron irradiation from a cathode electron gun (voltage 25 to 30 V, current 100 to 300 A), and at the same time a reaction gas is introduced at about 8×10 −4 Torr. As a result, a titanium carbide film is formed on the substrate at a fast deposition rate of 0.2 to 0.4 μm/min, but the method of applying voltage to the substrate is a feature of the present invention, which is shown in Figure 1. show. That is, at the beginning of coating, a constant voltage of -150 to 250 V is applied to the base material to actively draw in titanium ions to improve the adhesion between the base material and the titanium carbide film. After a titanium carbide film with good adhesion reaches several microns in thickness, the applied voltage is gradually lowered until a further 1 to 2 microns of titanium carbide film is deposited, and after that, a low voltage of -5V drop is maintained constant. , and hold until the desired film thickness is reached. In other words, the film formed in the region ( ) in FIG. 1 serves to improve adhesion to the surface of the base material, but the film suffers from significant crystal distortion due to ion implantation. This is gradually alleviated by the film formed in the () region, which plays the role of a buffer layer. In the region (), the negative voltage is applied only low enough to eliminate the charge up in the base material. In this way, the energy caused by ion collisions is small and the influence of non-uniform strain on the film is eliminated, and the internal residual stress of the formed film is extremely small. Therefore, the compatibility with the base material is improved and good adhesion is maintained. When the coating is performed in this manner, a thick titanium carbide film can be deposited with good adhesion even on a substrate having a larger coefficient of thermal expansion than TiC. In the figure, a is several μm, b-
a is several μm. [Embodiments of the Invention] The present method produces nickel-based heat-resistant alloy Inconel.
A titanium carbide film was coated on the 625 substrate and the adhesion of the film was investigated. The reported thermal expansion coefficient of titanium carbide is 7.4×10 -6 /℃ (25~
800℃), Inconel 625 14~17× 10-6 /℃(25~
870℃), Inconel 625 is much larger. The surface of the Inconel 625 used as the base material was shaved to intentionally create distortion on the surface of the base material, and then the film was deposited on top of it. An example of an apparatus for carrying out the present invention is shown in FIG. Using this HCD-activated reactive vapor deposition method, coatings were performed using the present method and a conventional method, and comparative studies were conducted. In order to avoid the embrittlement of the base material due to aging, which is unique to Inconel 625, the temperature of the base material was kept below 500℃. In this example, the voltage applied to the base material was changed to -200V in the () area, from -200V to -2V in the () area, and ()
In the area, apply a constant voltage of -2V, about 80
A titanium carbide film with a thickness of 25 microns was obtained in minutes. The coating conditions are shown in Table 1. Everything is the same except for the voltage applied to the base material. Regarding the applied voltage,
Even when the voltage is varied between -150 to 250 V and 0 to 5 V, no major difference is observed in the characteristics of the titanium carbide film described below. As a guide for the adhesion of titanium carbide film,
The state of peeling of the coating was investigated by observing the surface immediately after coating and after immersion in liquid nitrogen, and the diffraction was confirmed by X-ray diffraction.
【表】
折線の半値巾を比較することによりチタンカーバ
イド結晶の残留応力の相異により行なう。Ｘ線回
折において、回折線の半値巾は、結晶の歪が小さ
い程、言い換えれば内部残留応力が小さい程狭く
なる。逆に結晶の歪が大きいほど半値巾はブロー
ドトなり、内部応力が残留していることが言え
る。第２表に本発明方法と従来法による生成膜の
密着性の目安および回折線の半値巾を示す。[Table] Differences in residual stress in titanium carbide crystals are determined by comparing the half-widths of the broken lines. In X-ray diffraction, the half-width of a diffraction line becomes narrower as the distortion of the crystal is smaller, or in other words, the smaller the internal residual stress is. Conversely, the larger the strain in the crystal, the broader the half-width, indicating that internal stress remains. Table 2 shows the approximate adhesion of the films produced by the method of the present invention and the conventional method and the half-width of the diffraction line.
【表】
なお、両方法で製造されたチタンカーバイド膜
はともにＸ線マイクロアナライザーによる元素分
析の結果、化学量論組成であることが確かめられ
た。
（発明の効果）
以上のように、本発明によるチタンカーバイド
被覆法によれば、HCD活性化反応性蒸着を用い
て十数μｍ以上のチタンカーバイド厚膜を、イン
コネル625のようなチタンカーバイドに比べて非
常に熱膨張係数の大きい基材にも、残留応力が少
なくなるように被覆することが可能で、その結
果、基材との整合性をそこなうことなく密着性の
良好な状態を保持することができる。[Table] As a result of elemental analysis using an X-ray microanalyzer, it was confirmed that the titanium carbide films produced by both methods had stoichiometric compositions. (Effects of the Invention) As described above, according to the titanium carbide coating method according to the present invention, a thick titanium carbide film of more than 10 μm or more can be formed using HCD activated reactive vapor deposition compared to titanium carbide such as Inconel 625. It is possible to coat substrates with extremely high coefficients of thermal expansion with low residual stress, and as a result, good adhesion can be maintained without compromising consistency with the substrate. I can do it.
第１図は本発明の被覆法における基材に堆積さ
れていくチタンカーバイドの膜厚と基材への印加
電圧の関係を示す線図、第２図は本発明方法を実
施する装置の一例を示す構成図である。
１……真空槽、２……ホローカソード電子銃、
３……蒸発源、４……蒸発チタン、５……アセチ
レンガス給気口、６……基板加熱用ヒーター、７
……基材、８……作動用電源、９……基材印加用
電源。
Fig. 1 is a diagram showing the relationship between the thickness of titanium carbide deposited on a substrate and the voltage applied to the substrate in the coating method of the present invention, and Fig. 2 is an example of an apparatus for carrying out the method of the present invention. FIG. 1... Vacuum chamber, 2... Hollow cathode electron gun,
3... Evaporation source, 4... Evaporated titanium, 5... Acetylene gas supply port, 6... Heater for heating the substrate, 7
...Base material, 8... Power source for operation, 9... Power source for applying power to the base material.
Claims (1)
する際に基材、又は該基材を取り付けるクレート
への印加電圧を、被覆の当初は前記基材にマイナ
ス150〜マイナス250Vの一定電圧を印加してチタ
ンイオンの引込みを行い基材とチタンカーバイド
膜との密着性を増進させ、密着性のよいチタンカ
ーバイド膜が数ミクロンに達した後、更にチタン
カーバイド膜が１〜2μｍ堆積するまで印加電圧
を徐々に低下させていき、それ以後マイナス5V
以下の低い電圧を所望の膜厚に達するまで一定に
保持してチタンカーバイド厚膜を作製することを
特徴とするチタンカーバイド厚膜の被覆方法。1. When coating a titanium carbide thick film using the physical vapor deposition method, apply a constant voltage of -150 to -250 V to the base material at the beginning of coating. After the titanium ions are drawn in to improve the adhesion between the substrate and the titanium carbide film, and the titanium carbide film with good adhesion reaches a thickness of several microns, the applied voltage is applied until the titanium carbide film is further deposited to a thickness of 1 to 2 μm. Gradually lower it, and then -5V
1. A method for coating a titanium carbide thick film, characterized in that a titanium carbide thick film is produced by maintaining a constant voltage as low as below until a desired film thickness is reached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203487A JPS6096754A (en) | 1983-10-28 | 1983-10-28 | Coating method of titanium carbide thick film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203487A JPS6096754A (en) | 1983-10-28 | 1983-10-28 | Coating method of titanium carbide thick film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6096754A JPS6096754A (en) | 1985-05-30 |
| JPH046790B2 true JPH046790B2 (en) | 1992-02-06 |
Family
ID=16474966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203487A Granted JPS6096754A (en) | 1983-10-28 | 1983-10-28 | Coating method of titanium carbide thick film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096754A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63105960A (en) * | 1986-06-07 | 1988-05-11 | Kawasaki Steel Corp | Production of metallic strip provided with ion plating film having excellent adhesiveness and ion plating device |
| JPS6324055A (en) * | 1986-07-17 | 1988-02-01 | Kawasaki Steel Corp | Method for coating ornament with film having high adhesion and homogeneity |
| JPS63145766A (en) * | 1986-07-17 | 1988-06-17 | Kawasaki Steel Corp | Large surface area steel sheet provided with surface film having excellent adhesiveness, corrosion resistance and homogeneity and its production |
| DE102004019169A1 (en) * | 2004-04-20 | 2005-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for depositing carbide layers of refractory metals |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5197544A (en) * | 1975-02-26 | 1976-08-27 | Kuroomuhimakuno keiseihoho | |
| JPS6053113B2 (en) * | 1977-07-30 | 1985-11-22 | シチズン時計株式会社 | Film formation method |
-
1983
- 1983-10-28 JP JP58203487A patent/JPS6096754A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6096754A (en) | 1985-05-30 |
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