JPH0468581A - Cryostat - Google Patents
CryostatInfo
- Publication number
- JPH0468581A JPH0468581A JP2180402A JP18040290A JPH0468581A JP H0468581 A JPH0468581 A JP H0468581A JP 2180402 A JP2180402 A JP 2180402A JP 18040290 A JP18040290 A JP 18040290A JP H0468581 A JPH0468581 A JP H0468581A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- emissivity
- temperature
- cryostat
- inner face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は、超電導機器等に使用されるクライオスタット
に関する。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to a cryostat used in superconducting equipment and the like.
(従来の技術)
従来、超電導マグネット等を極低温に保持するためのク
ライオスタットは、極低温冷媒の蒸発を極力少なくする
ため以下のような構成となっている。即ち、極低温冷媒
を収容する冷媒容器と。(Prior Art) Conventionally, a cryostat for maintaining a superconducting magnet or the like at a cryogenic temperature has the following configuration in order to minimize evaporation of a cryogenic refrigerant. That is, a refrigerant container containing cryogenic refrigerant.
この冷媒容器を覆うとともに、上記冷媒容器との間に真
空断熱層を形成する真空容器と、上記断熱層内に設けら
れた熱シールドと、一端側が前記冷媒容器に通じるとと
もに、他端側か前記真空断熱層、熱シールドおよび真空
容器の壁を貫通して常湿部に位置するように設けられ、
極低温冷媒の注入、蒸発気体の回収、電流リードの案内
等に供される配管とで構成されている。a vacuum container that covers the refrigerant container and forms a vacuum insulation layer between it and the refrigerant container; a heat shield provided within the insulation layer; one end communicates with the refrigerant container; It is installed so that it penetrates the vacuum insulation layer, heat shield and wall of the vacuum container and is located in the normal humidity area.
It consists of piping used for injection of cryogenic refrigerant, collection of evaporated gas, guidance of current leads, etc.
上記のように構成されたクライオスタットにあっては、
前記配管以外の冷媒容器への侵入熱は、小型冷凍機等の
設置により数mWまで抑さえることができる。しかし、
前記配管に関わる侵入熱は、一般に数十mWであり、冷
媒の蒸発量を低減する上で大きな問題となる。この配管
に関わる侵入熱は、配管内の蒸発気体の対流によるもの
と、配管を通しての輻射熱によるものが大きな要因とな
っている。このうち蒸発気体の対流によるものは5対流
防止板などを設けることで押さえることができるが、輻
射に関する侵入熱をどのように押さえるかが問題となる
。このため、従来のクライオスタットでは、輻射率の小
さなアルミ等の材料でできたバッフル板などを挿入して
いた。In a cryostat configured as above,
The heat entering the refrigerant container other than the piping can be suppressed to several mW by installing a small refrigerator or the like. but,
The intrusion heat related to the piping is generally several tens of milliwatts, which poses a big problem in reducing the amount of evaporation of the refrigerant. The main causes of the heat intrusion into the piping are the convection of evaporated gas within the piping and the radiant heat through the piping. Among these, the convection of the evaporated gas can be suppressed by providing a convection prevention plate, etc., but the problem is how to suppress the intrusion heat related to radiation. For this reason, conventional cryostats have inserted baffle plates made of materials such as aluminum with low emissivity.
しかしながら、上記のように配管内にバッフル板を設け
ても、実際にはそれほど効果がなかった。However, even if a baffle plate was provided inside the pipe as described above, it was not actually very effective.
このことは1次のように説明される。This can be explained as follows.
前記配管は伝導による侵入熱をおさえるために、熱伝導
率の小さい材料、例えばステンレス等を使用している。The piping is made of a material with low thermal conductivity, such as stainless steel, in order to suppress heat intrusion due to conduction.
通常使用されるステンレスは、輻射率が0.01〜0.
05程度と小さい。輻射率が小さいということは、言い
換えれば反射率が大きいことを意味し、常温部で配管内
に入射した電磁波は、反射を繰り返しその多くが極低温
冷媒容器に達する。Usually used stainless steel has an emissivity of 0.01 to 0.
It is small, about 05. In other words, a low emissivity means a high reflectance, and electromagnetic waves that enter the pipe at room temperature are repeatedly reflected, with most of them reaching the cryogenic refrigerant container.
このため、バッフル板などを挿入してもそれほど効果が
ない。Therefore, even if a baffle plate or the like is inserted, it is not very effective.
(発明が解決しようとする課題)
上述のごとく、配管内にバッフル板を設けただけでは、
輻射による侵入熱をおさえることができない。(Problem to be solved by the invention) As mentioned above, simply providing a baffle plate inside the piping will not solve the problem.
It is not possible to suppress intrusion heat due to radiation.
そこで本発明は、配管内を通して極低温冷媒容器に入っ
てくる侵入熱を効果的に抑制できるクライオスタットを
提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a cryostat that can effectively suppress the intrusion heat that enters the cryogenic refrigerant container through the inside of the pipe.
(課題を解決するための手段)
本発明のクライオスタットは、極低温冷媒の注入、蒸発
気体の回収、電流リードの案内等に供される配管内面の
輻射率を、配管内面の温度に逆比例させ、即ち、配管内
面温度が高い所ほど輻射率を小さく、配管内面温度が低
い所ほど輻射率を大きくした構成にする。(Means for Solving the Problems) The cryostat of the present invention makes the emissivity of the inner surface of the pipe, which is used for injection of cryogenic refrigerant, recovery of evaporated gas, guidance of current leads, etc., in inverse proportion to the temperature of the inner surface of the pipe. In other words, the emissivity is made smaller where the pipe inner surface temperature is higher, and the emissivity is larger where the pipe inner surface temperature is lower.
(作用)
前述のごとく、前記配管内面の輻射率を常温部側はど小
さく、低温部側はど大きくすることで前記配管の常温部
側から入射、あるいは射出する輻射を少なくし、逆に、
低温部側では入射してきた輻射を多く吸収することがで
きる。当然、輻射率の大きい低温部側では、従来の構成
の配・管よりも輻射能は大きくなるが、この輻射能は絶
対温度の4乗に比例するため低温部ではその輻射能は大
変小さくほとんど影響がない。また、前記配管の低温部
に吸収された輻射熱は、蒸発気体やサーマルアンカから
奪われる。この結果、配管を通しての輻射による侵入熱
が抑制される。(Function) As mentioned above, by making the emissivity of the inner surface of the pipe smaller on the normal temperature side and larger on the low temperature side, the radiation entering or exiting from the normal temperature side of the pipe can be reduced, and conversely,
A large amount of incident radiation can be absorbed on the low temperature side. Naturally, on the low-temperature side, where the emissivity is high, the radiation is greater than that of pipes with conventional configurations, but this radiation is proportional to the fourth power of the absolute temperature, so in the low-temperature area, the radiation is very small and almost No impact. Furthermore, the radiant heat absorbed by the low temperature portion of the pipe is removed from the evaporated gas and the thermal anchor. As a result, heat intrusion due to radiation through the piping is suppressed.
(実施例) 以下、本発明の実施例を図面を参照しながら説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
基本的な構成は従来のクライオスタンドと同じであるが
1本実施例が従来のものと異なる点は。The basic structure is the same as the conventional cryostand, but there is one difference between this embodiment and the conventional cryostand.
配管7の内面の輻射率を積極的に変化させたことにある
。This is because the emissivity of the inner surface of the pipe 7 is actively changed.
すなわち、この実施例のクライオスタットでは、極低温
冷媒2の注入、蒸発気体の回収、電流リードの案内等に
供される配管7の内面の輻射率を。That is, in the cryostat of this embodiment, the emissivity of the inner surface of the pipe 7, which is used for injecting the cryogenic refrigerant 2, recovering evaporated gas, guiding the current lead, etc.
配管内面の温度に逆比例させ、即ち、配管内面温度が高
い所ほど輻射率を小さく、配管内面温度が低い所ほど輻
射率を大きくして構成する。この方法としては、輻射率
の異なる(色の異なる)塗料の塗布や、配管内面の表面
粗さを変化させる方法がある。The emissivity is inversely proportional to the temperature of the inner surface of the pipe, that is, the higher the inner temperature of the pipe, the lower the emissivity, and the lower the inner temperature of the pipe, the higher the emissivity. Examples of this method include applying paints with different emissivities (different colors) and changing the surface roughness of the inner surface of the pipe.
この様な構成であると、配管7の常温部側から入射、あ
るいは射出する輻射を少なくし、逆に、低温部側では入
射してきた輻射を多く吸収することができ、結果として
、極低温冷媒容器3への侵入熱を減らすことができる。With this configuration, it is possible to reduce the amount of radiation that enters or exits from the normal temperature side of the pipe 7, and conversely, absorbs a large amount of radiation that enters the low temperature side, and as a result, the cryogenic refrigerant Heat entering the container 3 can be reduced.
一般に、物体の輻射能は次式による。Generally, the radioactivity of an object is determined by the following formula.
E=t・4.88・ (T/100)’ここにεは輻射
率、Tは絶対温度である。E=t・4.88・(T/100)' where ε is the emissivity and T is the absolute temperature.
上述のように、物体の輻射能は、その絶対温度の4乗に
比例するため、常温部(300K)と、例えばサーマル
アンカがとられている、低温部(30K)とでは、 1
0000倍程度の差がある。 これに対して、輻射率は
、一般に0.01〜0.9程度であり100倍程度の差
がある。As mentioned above, the radiation activity of an object is proportional to the fourth power of its absolute temperature, so in a normal temperature area (300K) and a low temperature area (30K) where a thermal anchor is installed, for example,
There is a difference of about 0,000 times. On the other hand, the emissivity is generally about 0.01 to 0.9, which is a difference of about 100 times.
従来のクライオスタットでは、配管7の内面の輻射率は
ほぼ一定と考えられ、その値は、 0.05〜0.1程
度と小さく、言い換えれば反射率が大きい。In the conventional cryostat, the emissivity of the inner surface of the pipe 7 is considered to be approximately constant, and its value is as small as about 0.05 to 0.1, in other words, the reflectance is large.
このため、常温部で配管7内に入射、あるいは射出した
電磁波は、反射を繰り返しその多くが極低温冷媒容器3
に達する。本実施例によれば、低温部側はど輻射率が大
きい(吸収率が大きい)ため、常温部で配管7内に入射
、あるいは射出した電磁波は、低温部で、そのほとんど
が吸収され極低温冷媒容器3には達しない。逆に、輻射
率の大きい低温部側では、従来の構成の配管よりも輻射
能は大きくなるが、この輻射能は温度の4乗に比例する
ため低温部ではその輻射能は大変小さくほとんど影響が
ない。また、配管7の低温部に吸収された輻射熱は、蒸
発気体やサークルアンカ8によって奪われ、この結果、
配管7を通しての輻射による侵入熱が抑制される。For this reason, the electromagnetic waves that enter or are emitted into the pipe 7 at room temperature are repeatedly reflected and most of them are reflected in the cryogenic refrigerant container 3.
reach. According to this embodiment, since the low-temperature part side has a high emissivity (high absorption rate), most of the electromagnetic waves that enter or are emitted into the pipe 7 in the normal-temperature part are absorbed in the low-temperature part, and the temperature becomes extremely low. It does not reach the refrigerant container 3. Conversely, on the low-temperature side where the emissivity is high, the radiation is greater than that of piping with a conventional configuration, but since this radiation is proportional to the fourth power of temperature, the radiation is very small in the low-temperature area and has almost no effect. do not have. In addition, the radiant heat absorbed by the low temperature part of the pipe 7 is taken away by the evaporated gas and the circle anchor 8, and as a result,
Intrusion heat due to radiation through the pipe 7 is suppressed.
なお、本発明では、上述した、実施例に限定されるもの
ではなく、種々の変形例が考えられる。Note that the present invention is not limited to the embodiments described above, and various modifications can be made.
すなわち、配管7の内面の輻射率をその内面の温度に逆
比例させる上述の実施例のみではなく、サーマルアンカ
8が設けられた部分の輻射率を常温部のそれよりも大き
くし、また、前記アンカが複数存する場合には、アンカ
を設けた部分の温度が高いところほど輻射率を小さくす
る場合なども当然含まれるものである。That is, in addition to the above-described embodiment in which the emissivity of the inner surface of the pipe 7 is inversely proportional to the temperature of the inner surface, the emissivity of the portion where the thermal anchor 8 is provided is made larger than that of the normal temperature section, and When there are a plurality of anchors, this naturally includes the case where the emissivity is made smaller as the temperature of the portion where the anchor is provided is higher.
また、常温部での輻射率は、可能な限り小さいほうが望
ましく、特に、配管7のヘッド10の部分は、鏡面仕上
げなどにより、輻射率を小さくすることも本発明の中に
含まれるものである。Furthermore, it is desirable that the emissivity at room temperature be as low as possible, and it is also within the scope of the present invention to reduce the emissivity of the head 10 of the pipe 7 by applying a mirror finish or the like. .
以上述べたように、本発明によれば、極低温冷媒の注入
、蒸発気体の回収、電流リードの案内等に供される配管
を通して、輻射によって侵入する熱量が非常に少いクラ
イオスタンドを提供できる。As described above, according to the present invention, it is possible to provide a cryostand in which the amount of heat that enters by radiation is extremely small through the piping used for injection of cryogenic refrigerant, collection of evaporated gas, guidance of current leads, etc. .
図は、本発明の一実施例のクライオスタットの概略断面
図である。
1・・超電導コイル、 2・・・極低温冷媒、3・
・・極低温冷媒容器、 4・・・真空断熱層、5・真
空容器、 6・・・熱シールド。
7・・・配管、 8・・・サーマルアン
カ、9・・・小型冷凍機
代理人 弁理士 則 近 憲 佑The figure is a schematic cross-sectional view of a cryostat according to an embodiment of the present invention. 1. Superconducting coil, 2. Cryogenic refrigerant, 3.
...Cryogenic refrigerant container, 4.Vacuum insulation layer, 5.Vacuum container, 6.Heat shield. 7...Piping, 8...Thermal anchor, 9...Small refrigerator agent Patent attorney Noriyuki Chika
Claims (3)
を覆うとともに、上記冷媒容器との間に真空断熱層を形
成する真空容器と、上記断熱層内に設けられた熱シール
ドと、一端側が前記冷媒容器に通じるとともに、他端側
が前記真空断熱層、熱シールドおよび真空容器の壁を貫
通して常温部に位置する配管とを備えてなるクライオス
タットにおいて、前記配管内面の輻射率を場所によって
変化させたことを特徴とするクライオスタット。(1) A refrigerant container that accommodates a cryogenic refrigerant, a vacuum container that covers the refrigerant container and forms a vacuum insulation layer between the refrigerant container, and a heat shield provided within the insulation layer; In a cryostat, the emissivity of the inner surface of the piping is determined depending on the location of the cryostat, the piping having one end communicating with the refrigerant container and the other end penetrating the vacuum insulation layer, the heat shield, and the wall of the vacuum container and located in the room temperature part. A cryostat characterized by changes.
せた、即ち、配管内面温度が高い所ほど輻射率を小さく
、配管内面温度が低い所ほど輻射率を大きくしたことを
特徴とする請求項(1)記載のクライオスタット。(2) The emissivity of the inner surface of the pipe is inversely proportional to the temperature of the inner surface of the pipe, that is, the higher the inner temperature of the pipe, the lower the emissivity, and the lower the inner temperature of the pipe, the higher the emissivity. The cryostat according to claim (1).
のサーマルアンカが設けられた部分の輻射率を常温部の
それよりも大きくしたことを特徴とし、また、前記アン
カが複数存する場合には、アンカを設けた部分の温度が
高いところほど輻射率を小さくしたことを特徴とする請
求項(1)記載のクライオスタット。(3) When a thermal anchor is present in the piping, the emissivity of the portion of the piping where the thermal anchor is provided is made higher than that of the normal temperature part, and when there are multiple anchors, The cryostat according to claim 1, characterized in that the higher the temperature of the portion where the anchor is provided, the lower the emissivity is.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180402A JPH0468581A (en) | 1990-07-10 | 1990-07-10 | Cryostat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180402A JPH0468581A (en) | 1990-07-10 | 1990-07-10 | Cryostat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0468581A true JPH0468581A (en) | 1992-03-04 |
Family
ID=16082618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2180402A Pending JPH0468581A (en) | 1990-07-10 | 1990-07-10 | Cryostat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0468581A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010034334A (en) * | 2008-07-30 | 2010-02-12 | High Energy Accelerator Research Organization | Low-temperature vessel |
-
1990
- 1990-07-10 JP JP2180402A patent/JPH0468581A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010034334A (en) * | 2008-07-30 | 2010-02-12 | High Energy Accelerator Research Organization | Low-temperature vessel |
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