JPH0469917A - Multiple compartment type vacuum processor - Google Patents

Multiple compartment type vacuum processor

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Publication number
JPH0469917A
JPH0469917A JP18237690A JP18237690A JPH0469917A JP H0469917 A JPH0469917 A JP H0469917A JP 18237690 A JP18237690 A JP 18237690A JP 18237690 A JP18237690 A JP 18237690A JP H0469917 A JPH0469917 A JP H0469917A
Authority
JP
Japan
Prior art keywords
substrate
chamber
vacuum processing
processed
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18237690A
Other languages
Japanese (ja)
Inventor
Shinichi Hiramatsu
真一 平松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18237690A priority Critical patent/JPH0469917A/en
Publication of JPH0469917A publication Critical patent/JPH0469917A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To replace processed substrates with substrates to be processed in a one stroke step of a handling arm by a method wherein the substrates to be processed and the processed substrates are concurrently accommodated and retained at varied heights in a vacuum process compartment and the substrates are moved upwardly and downwardly by a substrate lifter. CONSTITUTION:A first substrate lifter 9a halts at three places alpha, beta, and gamma, and further a second substrate lifter halts at two places alpha and beta. In addition, the first substrate lifter 9a is provided with a round substrate receiver 11a supporting a back surface of the substrate, and, at the place alpha, the substrate receiver 11a is positioned lower than the substrate on a substrate stage 8a. After the process of substrate is completed, the lifter 9a moves upwardly up to a place gamma while the processed substrate 6a is supported by the substrate receiver 11a. Thereafter, when the processed substrate 6b is carried out, the lifter 9a moves downwardly to a height place beta. The processed substrate 6b shunts and retains a height place gamma not preventing substrate transfer, and, after the substrate 6c to be processed is transferred from a transport compartment, the processed substrate 6b is returned to the transport compartment 1.

Description

【発明の詳細な説明】 [産業上の利用分野〕 本発明は真空容器内で基板に対して処理を行う真空処理
装置に関し、特に基板を一枚ずつ処理する真空処理室を
複数個有する多室構造型真空処理装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vacuum processing apparatus for processing substrates in a vacuum container, and particularly to a multi-chamber vacuum processing apparatus having a plurality of vacuum processing chambers for processing substrates one by one. This invention relates to a structural vacuum processing device.

[従来の技術] 現在、半導体産業をはじめとする数多くの分野で真空処
理装置が用いられている。真空処理装置には、基板の表
面に薄膜を形成するための蒸着装置、スパッタリング装
置や、CVD装置、また逆に基板表面をエツチングする
ためのドライエツチング装置等がある。近年、LSIの
高集積化による配線の微細化、多層化に伴い、異なった
材質の薄膜を各々異なった条件下で連続形成したり、あ
るいはスパッタ、 CVD、ドライエッチ等の異種のプ
ロセスを基板を大気にさらすことなく、真空中で連続し
て行いたいという要求が強くなってきた。これらの要求
に対し、独立した排気系を有する真空処理室を複数個備
えた多室構造型の真空処理装置が開発されている。多室
構造型真空処理装置は、マルチチャンバー装置とも呼ば
れ、各室が完全に独立しているために、スパッタ材料、
又は反応生成物等の物質や、プロセスガス等の相互コン
タミネーションが遮断されると共に、各室ごとに異なっ
た条件下で基板処理を行うことができるという利点を有
している。処理の順序も任意に選択可能であり、−台の
装置で様々な使い方をすることができる。
[Prior Art] Vacuum processing equipment is currently used in many fields including the semiconductor industry. Vacuum processing equipment includes evaporation equipment, sputtering equipment, CVD equipment for forming a thin film on the surface of a substrate, and dry etching equipment for etching the substrate surface. In recent years, with the miniaturization and multilayering of interconnects due to the high integration of LSIs, thin films of different materials are successively formed under different conditions, or different processes such as sputtering, CVD, and dry etching are applied to substrates. There has been a growing demand for continuous processing in a vacuum without exposing it to the atmosphere. In response to these demands, a multi-chamber vacuum processing apparatus having a plurality of vacuum processing chambers each having an independent exhaust system has been developed. Multi-chamber structured vacuum processing equipment is also called multi-chamber equipment, and because each chamber is completely independent, sputtering materials,
It also has the advantage that mutual contamination of substances such as reaction products and process gases is blocked, and that substrate processing can be performed under different conditions in each chamber. The order of processing can also be arbitrarily selected, and the same device can be used in various ways.

一般に多室構造型の真空処理装置は第3図(a)に示す
ように、中央に位置する搬送室1の周囲に、基板が収納
された基板収納カセット2を搬送室1との間で出し入れ
するロードロック室3と、複数個の真空処理室4a、真
空処理室4b、真空処理室4c。
In general, a vacuum processing apparatus with a multi-chamber structure has a transfer chamber 1 located in the center, and a substrate storage cassette 2 containing substrates is moved between the transfer chamber 1 and the transfer chamber 1, as shown in FIG. 3(a). a load-lock chamber 3, a plurality of vacuum processing chambers 4a, 4b, and 4c.

真空処理室4dとが配設され、各室3.4a〜4cと搬
送室1との間を仕切り弁5a、 5b、 5c、 5d
、 5eを介して接続させた構造となっており、各室は
それぞれ独立した真空ポンプにより排気される。第3図
(a)は真空処理室を4室有する例であるが、その数は
用途に応じて変化する。一般に真空処理室を3〜5室有
する場合が多い。搬送室1の内部には基板6を搬送する
ための基板ハンドリングアーム7が、備えられており、
基板ハンドリングアーム7が点Oを中心とする回転運動
、及び伸縮運動を行うことにより、ロードロック室3及
び各真空処理室4a。
A vacuum processing chamber 4d is provided, and gate valves 5a, 5b, 5c, 5d are provided between each chamber 3.4a to 4c and the transfer chamber 1.
, 5e, and each chamber is evacuated by an independent vacuum pump. FIG. 3(a) shows an example having four vacuum processing chambers, but the number changes depending on the application. Generally, it often has 3 to 5 vacuum processing chambers. A substrate handling arm 7 for transferring the substrate 6 is provided inside the transfer chamber 1.
The load lock chamber 3 and each vacuum processing chamber 4a are moved by the substrate handling arm 7 rotating around point O and extending and contracting.

4b、4c、4dに対して基板6がアクセスされる。The substrate 6 is accessed to 4b, 4c, and 4d.

一方、各真空処理室4a、 4b、 4c、 4dの内
部には、基板を載せるための基板ステージ8a、 8b
、 8c、 8dがあり、各基板ステージ8a、 8b
、 8c、 8dには、上下方向に直線運動を行う基板
リフター13a、 13b。
On the other hand, inside each of the vacuum processing chambers 4a, 4b, 4c, and 4d, there are substrate stages 8a, 8b on which substrates are placed.
, 8c, 8d, each substrate stage 8a, 8b
, 8c, and 8d are substrate lifters 13a and 13b that perform linear movement in the vertical direction.

+3c、 13dが内蔵されている。第3図(b)は真
空処理室4aを示す平面図、第3図(c)は真空処理室
4aを搬送室1側よりみた断面図である。第3図(C)
に示すように、基板リフター13aは、αとβの2ケ所
の高さ位置で停止する。真空処理室での処理終了後、処
理済み基板を真空処理室から搬送室へ戻す動作、及び処
理前基板を搬送室から真空処理室へ送り込む動作をフロ
ーチャートで示したものが第4図(a)、 (b)であ
る。また、真空処理室4a。
+3c and 13d are built-in. FIG. 3(b) is a plan view showing the vacuum processing chamber 4a, and FIG. 3(c) is a sectional view of the vacuum processing chamber 4a viewed from the transfer chamber 1 side. Figure 3 (C)
As shown in , the substrate lifter 13a stops at two height positions α and β. After the processing in the vacuum processing chamber is completed, the flow chart of the operation of returning the processed substrate from the vacuum processing chamber to the transfer chamber and the operation of transporting the unprocessed substrate from the transfer chamber to the vacuum processing chamber is shown in Fig. 4(a). , (b). Also, a vacuum processing chamber 4a.

4b、 4c、 4dの順序で処理を行う場合の、各室
における基板搬送状態遷移を下記の表2に示す。
Table 2 below shows the transition of the substrate transport state in each chamber when processing is performed in the order of 4b, 4c, and 4d.

(以下余白) 〔売切が解決しようとする課題〕 」二連した従来の多室構造型真空処理装置では、処理済
み基板を真空処理室から搬送室に戻す一連の動作におい
て、基板ハンドリングアームが伸びの動作をする際、基
板ハンドリングアームは基板を載せていない。一方、処
理前基板を搬送室から真空処理室へ送り込む一連の動作
では、基板ハンドリングアームが縮みの動作をする際、
基板ハンドリングアームは基板を載せていない。このよ
うに、基板ハンドリングアームが実際に基板を載せて搬
送するのは、その全体の動作のうちの約半分であり、こ
のため、非常に搬送の効率が悪く、時間を要していた。
(Left below) [Issues that Sold Out attempts to solve] In conventional dual-chamber vacuum processing equipment, the substrate handling arm is forced to During the stretching motion, the substrate handling arm does not carry a substrate. On the other hand, in a series of operations for transporting unprocessed substrates from the transfer chamber to the vacuum processing chamber, when the substrate handling arm retracts,
The board handling arm does not carry any board. As described above, the actual loading and transport of the substrate by the substrate handling arm accounts for about half of its entire operation, and as a result, the transport efficiency is very low and it takes a long time.

第3図のように4つの真空処理室を有する多室構造型真
空処理装置では、真空処理室4a→4b→4c→4dの
順序で各室毎に60秒間基板処理を行った場合のスルー
プットは約20枚/Hrと低い。
In a multi-chamber structured vacuum processing apparatus having four vacuum processing chambers as shown in Fig. 3, the throughput is as follows when substrate processing is performed for 60 seconds in each chamber in the order of vacuum processing chambers 4a → 4b → 4c → 4d. It is low at about 20 sheets/Hr.

このように従来の多室構造型真空処理装置は、プロセス
性能面では多くの利点を有している反面、スルーブツト
が低くなるという欠点を有していた。
As described above, while the conventional multi-chamber structured vacuum processing apparatus has many advantages in terms of process performance, it has the disadvantage of low throughput.

本発明の目的は、各真空処理室に対する基板ハンドリン
グアームの1回の往復工程により処理済基板と処理前基
板との差替えを行うことを可能とした多室構造型真空処
理装置を提供することにある。
An object of the present invention is to provide a multi-chamber structure type vacuum processing apparatus that makes it possible to replace a processed substrate with an unprocessed substrate by one reciprocating process of a substrate handling arm to each vacuum processing chamber. be.

[課題を解決するための手段] 前記目的を達成するため、本発明に係る多室構造型真空
処理装置においては、真空処理室と、搬送室と、基板保
持機構とを有する多室構造型真空処理装置であって、 真空処理室は、基板を一枚ずつ処理するもので、搬送室
の周囲に複数個配設させたものであり、搬送室は、基板
ハンドリングアームを内蔵し、該アームにより基板を各
真空処理室に搬出入させるものであり、 基板保持機構は、真空処理室内に内蔵させたもので、基
板ハンドリングアームにより搬入された処理前基板と、
基板ハンドリングアームにより搬出させる処理済基板と
を高さを異ならせて同時に収容、保持させるものである
。また、前記基板保持機構は、第1及び第2の基板リフ
ターを有するものであり、 第1及び第2の基板リフターは、基板ステージに対し昇
降させるもので、第2の基板リフターは、基板の裏面を
支持して、基板ハンドリングアームによる基板搬入高さ
位置と基板ステージとの間に昇降させるものであり、該
第1の基板リフターは、基板ステージ上の基板の裏面を
基板受けで支持して、前記基板搬入高さ位置を越えた上
方の退避位置まで昇降させるものであり、前記基板ハン
ドリングアームは、基板を把持させる開閉可能な基板受
けを有するものである。
[Means for Solving the Problems] In order to achieve the above object, a multi-chamber structured vacuum processing apparatus according to the present invention includes a multi-chamber structured vacuum processing apparatus having a vacuum processing chamber, a transfer chamber, and a substrate holding mechanism. The processing equipment includes a plurality of vacuum processing chambers that process substrates one by one and are arranged around a transfer chamber, and the transfer chamber has a built-in substrate handling arm, and the vacuum processing chamber processes substrates one by one. The substrate is carried in and out of each vacuum processing chamber, and the substrate holding mechanism is built into the vacuum processing chamber, and the substrate handling arm carries the substrate before processing,
Processed substrates carried out by a substrate handling arm are accommodated and held at different heights at the same time. Further, the substrate holding mechanism has first and second substrate lifters, the first and second substrate lifters are for raising and lowering the substrate with respect to the substrate stage, and the second substrate lifter is for lifting and lowering the substrate. The first substrate lifter supports the back surface of the substrate and lifts and lowers the substrate between the substrate loading height position by the substrate handling arm and the substrate stage, and the first substrate lifter supports the back surface of the substrate on the substrate stage with a substrate holder. The substrate handling arm has an openable and closable substrate receiver for gripping the substrate.

〔作用〕[Effect]

本発明の多室構造型真空処理装置は、各真空処理室内に
処理前基板と処理済み基板との2枚の基板を同時に収容
し、保持する機構を備えているため、真空処理室での基
板処理終了後、処理済み基板は基板搬送機構との基板受
は渡しの妨げとならない位置に退避、保持され、まず搬
送室から処理前基板が送り込まれた後、次に処理済み基
板が搬送室へ戻されるという順序で処理済み基板と処理
前基板とり入れ替えを行う。
The multi-chamber structured vacuum processing apparatus of the present invention is equipped with a mechanism for simultaneously accommodating and holding two substrates, an unprocessed substrate and a processed substrate, in each vacuum processing chamber. After the processing is completed, the processed substrate is moved to a position where it does not interfere with the transfer of the substrate to the substrate transport mechanism, and is held there. First, the unprocessed substrate is sent from the transfer chamber, and then the processed substrate is transferred to the transfer chamber. The processed substrates and unprocessed substrates are exchanged in the order in which they are returned.

〔実施例] 次に本発明について図面を参照して説明する。〔Example] Next, the present invention will be explained with reference to the drawings.

第1図(a)は本発明の一実施例の多室構造型真空処理
装置の平面図である。
FIG. 1(a) is a plan view of a multi-chamber vacuum processing apparatus according to an embodiment of the present invention.

図において、本発明装置は、中央に位置する搬送室lの
周囲に、基板の収納された基板収納カセット2を高し入
れするロードロック室3と、4つの真空処理室4a、真
空処理室4b、真空処理室4c。
In the figure, the apparatus of the present invention includes a load-lock chamber 3 in which a substrate storage cassette 2 containing substrates is placed at a height, and four vacuum processing chambers 4a and 4b around a transfer chamber l located in the center. , vacuum processing chamber 4c.

真空処理室4dとが配設された構成となっている。The structure includes a vacuum processing chamber 4d.

各室4a、 4b、 4c、 4dは仕切り弁5a、 
5b、 5c、 5d。
Each chamber 4a, 4b, 4c, 4d has a gate valve 5a,
5b, 5c, 5d.

5eにより仕切られており、各々独立した真空ポンプに
より排気される。搬送室1の内部にはロードロック室3
及び各真空処理室4a、 4b、4c、4dに対して、
基板6を一枚ずつ送受するための基板ハンドリングアー
ム7が備えられており、本基板ハンドリングアーム7は
点Oを中心とする回転運動並びに伸縮運動を行う。また
各真空処理室4a、 4b、 4c。
5e, each of which is evacuated by an independent vacuum pump. There is a load lock chamber 3 inside the transfer chamber 1.
And for each vacuum processing chamber 4a, 4b, 4c, 4d,
A substrate handling arm 7 is provided for transferring and receiving substrates 6 one by one, and the substrate handling arm 7 performs rotational movement around a point O and telescopic movement. Further, each vacuum processing chamber 4a, 4b, 4c.

4dの内部には、基板を載せるための基板ステージ8a
、 8b、 8c、 8dがあり、各基板ステージ8a
、 8b。
4d has a substrate stage 8a on which a substrate is placed.
, 8b, 8c, and 8d, and each substrate stage 8a
, 8b.

8c、 8dには上下方向に直線運動を行う第1の基板
リフター9a、 9b、 9c、 9dと、第2の基板
リフター10a、 Job、 lOc、 IOdとが内
蔵されている。
The first substrate lifters 9a, 9b, 9c, and 9d that perform linear movement in the vertical direction and the second substrate lifters 10a, Job, 1Oc, and IOd are built into the substrates 8c and 8d.

第1図(b)は真空処理室4aの平面図、同図(C)。FIG. 1(b) is a plan view of the vacuum processing chamber 4a, and FIG. 1(C) is a plan view of the vacuum processing chamber 4a.

(d)は各々真空処理室4aを搬送室側と、側面より見
た縦方向断面図である。図示したように第1の基板リフ
ター98はα、β、γの3ケ所で、また、第2の基板リ
フターはα、β2ケ所で停止する。
(d) is a vertical sectional view of the vacuum processing chamber 4a viewed from the transfer chamber side and from the side, respectively. As shown, the first substrate lifter 98 stops at three locations α, β, and γ, and the second substrate lifter stops at two locations α and β.

また、第1の基板リフター9aは基板の裏面を支える円
形の基板受けIlaを備えている。このため、高さ位置
αでは基板受けllaは基板ステージ8a上の基板より
下方に位置し、基板の処理が終了した後、リフター98
は処理済み基板6aを基板受けIlaで支えて高さ位置
γまで上昇する。その後、処理済み基板6bを搬出させ
る際には高さ位置βまで下降させる。
Further, the first substrate lifter 9a includes a circular substrate support Ila that supports the back surface of the substrate. Therefore, at the height position α, the substrate receiver lla is located below the substrate on the substrate stage 8a, and after the processing of the substrate is completed, the lifter 98
supports the processed substrate 6a with the substrate support Ila and rises to the height position γ. Thereafter, when the processed substrate 6b is carried out, it is lowered to the height position β.

一方、基板ハンドリングアーム7には同時に開閉運動を
行う2つの基板受け13a、 +3bが備えられており
、閉の状態で基板を支持し、開の状態では基板とは接触
せずに、基板が基板受け13aと+3bの間を上下方向
に通過することが可能となっている。
On the other hand, the substrate handling arm 7 is equipped with two substrate supports 13a and +3b that simultaneously open and close, supporting the substrate in the closed state and supporting the substrate without contacting the substrate in the open state. It is possible to pass between the receivers 13a and +3b in the vertical direction.

開閉運動機構は例えばばねと電磁石等を使用することに
より、容易に実現可能である。
The opening/closing movement mechanism can be easily realized by using, for example, a spring and an electromagnet.

真空処理室での処理終了後の処理済み基板と処理前基板
の入れ替え動作をフローチャートで示したものが第2図
である。第2図に示したように、処理済み基板6bは基
板搬送機構との基板受は渡しの妨げとならない高さ位置
γに退避、保持され、まず搬送室から処理前基板6cが
送り込まれた後、次に処理済み基板6bが搬送室1へ戻
される。このように処理済み基板と処理前基板とが入れ
替わっていくため、真空処理室4a、 4b、 4c、
 4dの順序で処理を行った場合の各室における基板搬
送状態遷移は表1のようになる。
FIG. 2 is a flowchart showing the operation of exchanging the processed substrate and the unprocessed substrate after the processing in the vacuum processing chamber is completed. As shown in FIG. 2, the processed substrate 6b is retracted and held at a height position γ that does not interfere with the transfer of the substrate to the substrate transfer mechanism, and after the unprocessed substrate 6c is first sent from the transfer chamber. Then, the processed substrate 6b is returned to the transfer chamber 1. Since the processed substrates and the unprocessed substrates are replaced in this way, the vacuum processing chambers 4a, 4b, 4c,
Table 1 shows the transition of the substrate transport state in each chamber when the processing is performed in the order of 4d.

(以下余白) 尚、基板リフター9a〜9d、 ]Oa〜IOdは図示
のものに限定されるものではない。
(Hereinafter, blank space) Note that the substrate lifters 9a to 9d and ]Oa to IOd are not limited to those shown in the drawings.

[発明の効果] 以上説明したように、本発明の多室構造型真空処理装置
は、真空処理室において処理済み基板を一目、基板搬送
機構との基板受は渡しの妨げとならない位置に退避させ
、初めに処理前基板を搬送室より受は取って基板ステー
ジ上にセットした後、処理済み基板を搬送室に戻すとい
うシーケンスにしたので基板ハンドリングアームは伸び
及び縮みのいずれの動作の場合も基板を載せており効率
良く搬送を行うことができる。
[Effects of the Invention] As explained above, the multi-chamber structured vacuum processing apparatus of the present invention allows the processed substrates to be seen in the vacuum processing chamber, and the substrate holder connected to the substrate transport mechanism to be evacuated to a position where it does not interfere with the transfer. First, the unprocessed substrate is picked up from the transfer chamber, set on the substrate stage, and then the processed substrate is returned to the transfer chamber, so the substrate handling arm can handle the substrate regardless of whether it is extended or retracted. can be carried efficiently.

表1と表2の本発明と従来の多室構造型真空処理装置の
各室の基板搬送状態遷移において、ロードロツタ室に処
理完了基板が戻ってきてから次の処理完了基板が戻って
くるまでを1サイクルとし、この1サイクル中の基板ハ
ンドリングアームの動作回数を比較すると 本発明の多室構造型真空処理装置二回転=5.伸び十縮
み=6従来の多室構造型真空処理装置:回転=15.伸
び士縮み=lOとなり、回転が173.伸び士縮みが3
75と大幅に動作が低減されているのがわかる。第1図
に示した多室構造型真空処理装置において真空処理室A
→B→C−Dの順序で各室60秒間基板処理を行った場
合のスリープツトは約35枚/l(rとなり従来の約2
0枚/Ilrに比べて1.75倍向上している。
In the substrate transfer state transition of each chamber of the present invention and the conventional multi-chamber structured vacuum processing apparatus shown in Tables 1 and 2, from the time a processed substrate returns to the load rotor chamber until the next processed substrate returns. Assuming one cycle, comparing the number of operations of the substrate handling arm during this one cycle, the multi-chamber vacuum processing apparatus of the present invention has two rotations = 5. Expansion and contraction = 6 Conventional multi-chamber vacuum processing equipment: Rotation = 15. The elongation contraction = lO, and the rotation is 173. Stretcher shrinkage is 3
It can be seen that the movement is significantly reduced to 75. In the multi-chamber structured vacuum processing apparatus shown in Fig. 1, the vacuum processing chamber A
When processing substrates for 60 seconds in each chamber in the order of →B→C-D, the sleep rate is approximately 35 sheets/l (r, which is about 2
This is an improvement of 1.75 times compared to 0 sheets/Ilr.

このように、本発明の多室構造型真空処理装置は従来大
きな欠点とされていた処理能力の低さを大きく改善する
ことができる。
In this way, the multi-chamber structured vacuum processing apparatus of the present invention can greatly improve the low processing capacity, which has traditionally been a major drawback.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の一実施例の多室構造型真空処理
装置の平面図、同図(b)は真空処理室の平面図、同図
(C)、 (d)は各々真空処理室を搬送室側と側面よ
り見た縦方向断面図、第2図は真空処理室での処理終了
後の処理済み基板と処理前基板の入れ替え動作のフロー
チャート、第3図(a)は従来の多室構造型真空処理装
置の平面図、同図(b)は真空処理室の平面図、同図(
C)は真空処理室を搬送室側より見た縦方向断面図、第
4図(a)、 (b)は各々処理済み基板を真空処理室
から搬送室へ戻す動作及び処理前基板を搬送室から真空
処理室へ送り込む動作のフローチャートである。 】・・・搬送室       2・・・基板収納カセッ
ト3・・・ロードロック室 4a、 4b、 4c、 
4d・・・真空処理室5a、 5b、 5c、 5d、
 5e ・・・仕切り弁 6a−基板6b・・・処理済
み基板     6c・・・処理前基板7・・・基板ハ
ンドリングアーム 8a、8b、8c、8d−−一基板ステージ9a、 9
b、 9c、 9d−−・第1の基板リフター10a、
 IOb、 ]Oc、 l0d−第2の基板リフター+
1a、ilb・・・シャフト
FIG. 1(a) is a plan view of a multi-chamber structured vacuum processing apparatus according to an embodiment of the present invention, FIG. 1(b) is a plan view of a vacuum processing chamber, and FIG. 1(C) and (d) are respectively vacuum A vertical cross-sectional view of the processing chamber seen from the transfer chamber side and the side, Fig. 2 is a flowchart of the exchange operation of processed substrates and unprocessed substrates after processing in the vacuum processing chamber, and Fig. 3 (a) is a conventional (b) is a plan view of the vacuum processing chamber, and (b) is a plan view of the vacuum processing chamber.
C) is a vertical cross-sectional view of the vacuum processing chamber viewed from the transfer chamber side, and Figures 4(a) and (b) are the operation of returning the processed substrate from the vacuum processing chamber to the transfer chamber, and the operation of returning the unprocessed substrate to the transfer chamber. It is a flowchart of the operation of sending the sample from the sample to the vacuum processing chamber. ]... Transfer chamber 2... Board storage cassette 3... Load lock chamber 4a, 4b, 4c,
4d...Vacuum processing chambers 5a, 5b, 5c, 5d,
5e...Gate valve 6a-Substrate 6b...Processed substrate 6c...Substrate before processing 7...Substrate handling arms 8a, 8b, 8c, 8d--Substrate stage 9a, 9
b, 9c, 9d--first substrate lifter 10a,
IOb, ]Oc, l0d-second substrate lifter+
1a, ilb...shaft

Claims (1)

【特許請求の範囲】 (1)真空処理室と、搬送室と、基板保持機構とを有す
る多室構造型真空処理装置であって、 真空処理室は、基板を一枚ずつ処理するもので、搬送室
の周囲に複数個配設させたものであり、搬送室は、基板
ハンドリングアームを内蔵し、該アームにより基板を各
真空処理室に搬出入させるものであり、 基板保持機構は、真空処理室内に内蔵させたもので、基
板ハンドリングアームにより搬入された処理前基板と、
基板ハンドリングアームにより搬出させる処理済基板と
を高さを異ならせて同時に収容、保持させるものである
ことを特徴とする多室構造型真空処理装置。(2)前記
基板保持機構は、第1及び第2の基板リフターを有する
ものであり、 第1及び第2の基板リフターは、基板ステージに対し昇
降させるもので、第2の基板リフターは、基板の裏面を
支持して、基板ハンドリングアームによる基板搬入高さ
位置と基板ステージとの間に昇降させるものであり、該
第1の基板リフターは、基板ステージ上の基板の裏面を
基板受けで支持して、前記基板搬入高さ位置を越えた上
方の退避位置まで昇降させるものであることを特徴とす
る請求項第(1)項記載の多室構造型真空処理装置。 (3)前記基板ハンドリングアームは、基板を把持させ
る開閉可能な基板受けを有するものであることを特徴と
する請求項第(1)項記載の多室構造型真空処理装置。
[Claims] (1) A multi-chamber structured vacuum processing apparatus having a vacuum processing chamber, a transfer chamber, and a substrate holding mechanism, wherein the vacuum processing chamber processes substrates one by one, The transfer chamber has a built-in substrate handling arm, and the arm carries the substrate in and out of each vacuum processing chamber.The substrate holding mechanism is a vacuum processing chamber. It is built into the room and handles unprocessed substrates brought in by the substrate handling arm.
A multi-chamber vacuum processing apparatus characterized in that processed substrates to be carried out by a substrate handling arm are accommodated and held at different heights at the same time. (2) The substrate holding mechanism has first and second substrate lifters, the first and second substrate lifters are for raising and lowering the substrate with respect to the substrate stage, and the second substrate lifter is for lifting and lowering the substrate with respect to the substrate stage. The first substrate lifter supports the back side of the substrate on the substrate stage and raises and lowers the substrate between the substrate loading height position by the substrate handling arm and the substrate stage, and the first substrate lifter supports the back side of the substrate on the substrate stage with a substrate holder. 2. The multi-chamber vacuum processing apparatus according to claim 1, wherein the substrate is moved up and down to a retracted position above the substrate loading height position. (3) The multi-chamber structured vacuum processing apparatus according to claim (1), wherein the substrate handling arm has an openable and closable substrate holder for gripping the substrate.
JP18237690A 1990-07-10 1990-07-10 Multiple compartment type vacuum processor Pending JPH0469917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18237690A JPH0469917A (en) 1990-07-10 1990-07-10 Multiple compartment type vacuum processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18237690A JPH0469917A (en) 1990-07-10 1990-07-10 Multiple compartment type vacuum processor

Publications (1)

Publication Number Publication Date
JPH0469917A true JPH0469917A (en) 1992-03-05

Family

ID=16117230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18237690A Pending JPH0469917A (en) 1990-07-10 1990-07-10 Multiple compartment type vacuum processor

Country Status (1)

Country Link
JP (1) JPH0469917A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208959A (en) * 1992-06-24 1994-07-26 Anelva Corp Cvd device, multi-chamber type cvd device and its substrate processing method
WO2000042650A1 (en) * 1999-01-12 2000-07-20 Tokyo Electron Limited Vacuum treatment device
JP2010287783A (en) * 2009-06-12 2010-12-24 Lintec Corp Transfer apparatus
US7857569B2 (en) 2002-02-25 2010-12-28 Tokyo Electron Limited Semiconductor processing system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208959A (en) * 1992-06-24 1994-07-26 Anelva Corp Cvd device, multi-chamber type cvd device and its substrate processing method
WO2000042650A1 (en) * 1999-01-12 2000-07-20 Tokyo Electron Limited Vacuum treatment device
US6746196B1 (en) 1999-01-12 2004-06-08 Tokyo Electron Limited Vacuum treatment device
US7857569B2 (en) 2002-02-25 2010-12-28 Tokyo Electron Limited Semiconductor processing system
JP2010287783A (en) * 2009-06-12 2010-12-24 Lintec Corp Transfer apparatus

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