JPH0470808A - Electrostatic image reproduction method - Google Patents
Electrostatic image reproduction methodInfo
- Publication number
- JPH0470808A JPH0470808A JP18601890A JP18601890A JPH0470808A JP H0470808 A JPH0470808 A JP H0470808A JP 18601890 A JP18601890 A JP 18601890A JP 18601890 A JP18601890 A JP 18601890A JP H0470808 A JPH0470808 A JP H0470808A
- Authority
- JP
- Japan
- Prior art keywords
- electro
- electrostatic image
- optic crystal
- reproduction method
- phase compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Combination Of More Than One Step In Electrophotography (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電界に応じて電気光学結晶の異方性が変化する
ことを利用して静電画像を可視化するようにした静電画
像再生方式に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides an electrostatic image reproduction method that visualizes an electrostatic image by utilizing the change in anisotropy of an electro-optic crystal depending on an electric field. It is related to.
〔従来の技術]
従来、導電層上に光導電層を形成した感光体と、導電層
上に絶縁層を形成した電荷保持媒体とを対向配置し、両
溝電層間に電圧を印加した状態で画像露光し、露光量に
応じて電荷保持媒体上に電荷を蓄積し、静電潜像を記録
することが行われている。[Prior Art] Conventionally, a photoreceptor having a photoconductive layer formed on a conductive layer and a charge holding medium having an insulating layer formed on the conductive layer are placed facing each other, and a voltage is applied between both groove conductive layers. BACKGROUND ART Imagewise exposure is performed, charges are accumulated on a charge holding medium according to the amount of exposure, and an electrostatic latent image is recorded.
第4図に示す電荷保持媒体5はこのようにして静電画像
が記録されたものである。この電荷保持媒体5に電気光
学結晶4を対向配置し、電気光学結晶4に形成した電極
4aと電荷保持媒体5の電極5aとを接続すると、電気
光学結晶4には電荷保持媒体5の帯電電荷に応じた電界
が加えられる。The charge holding medium 5 shown in FIG. 4 has an electrostatic image recorded thereon in this manner. When the electro-optic crystal 4 is arranged to face the charge-holding medium 5 and the electrode 4a formed on the electro-optic crystal 4 and the electrode 5a of the charge-holding medium 5 are connected, the electro-optic crystal 4 is charged with the charged charge of the charge-holding medium 5. An electric field is applied according to the
電気光学結晶4の光学異方性の変化は電界の大きさに比
例するので、静電荷量に応じて変化することになる。Since the change in the optical anisotropy of the electro-optic crystal 4 is proportional to the magnitude of the electric field, it changes depending on the amount of electrostatic charge.
このとき光源1からポラライザ2を通して電気光学結晶
4に光を照射すると、ポラライザ2からの偏光は電気光
学結晶4の光学異方性により電荷保持媒体5の静電荷量
に応じて偏光面が回転する。At this time, when light is irradiated from the light source 1 to the electro-optic crystal 4 through the polarizer 2, the plane of polarization of the polarized light from the polarizer 2 rotates according to the amount of electrostatic charge on the charge retention medium 5 due to the optical anisotropy of the electro-optic crystal 4. .
この偏光面の回転した偏光をアナライザ6を通して取り
出すと、電荷保持媒体5の静電荷量に応じた透過光量が
得られ、静電画像を可視化することが可能である。When this polarized light whose plane of polarization has been rotated is extracted through the analyzer 6, an amount of transmitted light corresponding to the amount of electrostatic charge on the charge holding medium 5 is obtained, and it is possible to visualize an electrostatic image.
即ち、レタデーンヨンの変化Δφは、屈折率をn、電気
光学定数をT、電界強度をE、光路長を11波長をλと
したとき、次式で表される。That is, the change in retardation Δφ is expressed by the following equation, where n is the refractive index, T is the electro-optic constant, E is the electric field strength, and λ is the optical path length.
λ
今、電気光学結晶、空隙、電荷保持媒体について、それ
ぞれ厚み、誘電率を(dl、εl)、(d2.ε2)、
(d3.ε3)、電荷保持媒体の像電位をVsとすると
、
ε 3 ε 2
となる。電荷保持媒体が電気光学結晶に接しくd、=0
) 、かつ電荷保持媒体が金属的な場合(d3=0)に
は、
V s = E d + となる。
・・・(3)すなわち、(1)式のEβは電位Vsに
対応し1、反射型の場合にはf=2d、 、透過型の場
合にはf−d、となり、Δφを求めることにより電荷保
持媒体表面の電位Vs、即ち電荷量を求めることができ
る。λ Now, the thickness and dielectric constant of the electro-optic crystal, void, and charge holding medium are (dl, εl), (d2.ε2), respectively.
(d3.ε3), and if the image potential of the charge retention medium is Vs, then ε 3 ε 2 . When the charge retention medium is in contact with the electro-optic crystal, d, = 0
), and when the charge retention medium is metallic (d3=0), V s = E d + .
...(3) That is, Eβ in equation (1) corresponds to the potential Vs and becomes 1, f = 2d in the case of a reflective type, f - d in the case of a transmission type, and by finding Δφ, The potential Vs on the surface of the charge holding medium, that is, the amount of charge can be determined.
第5図は電荷保持媒体上の潜像表面電位を横軸に、アナ
ライザ6からの透過光量を縦軸に取った時の関係を示す
図である。透過光量はsin” (Δφ/2)となり、
前述したようにΔφは潜像表面電位に比例するので、透
過光量は潜像表面電位に対して正弦波カーブを描くこと
になる。そのため、潜像表面電位が小さい第5図のA部
分においては、表面電位変化に対する透過光量変化がほ
とんど得られないため、従来の方式では検出することが
できなかった。FIG. 5 is a diagram showing the relationship between the surface potential of the latent image on the charge holding medium on the horizontal axis and the amount of transmitted light from the analyzer 6 on the vertical axis. The amount of transmitted light is sin” (Δφ/2),
As described above, since Δφ is proportional to the latent image surface potential, the amount of transmitted light draws a sine wave curve with respect to the latent image surface potential. Therefore, in the part A of FIG. 5 where the latent image surface potential is small, there is almost no change in the amount of transmitted light in response to a change in the surface potential, and therefore it could not be detected by the conventional method.
本発明は上記課題を解決するためのもので、潜像表面電
位が小さいところにおいても、大きな透過光量変化が得
られ、検出することが可能な静電画像再生方式を提供す
ることを目的とする。The present invention is intended to solve the above problems, and aims to provide an electrostatic image reproduction method that can obtain and detect a large change in the amount of transmitted light even in areas where the latent image surface potential is small. .
本発明は、静電画像を記録した電荷保持媒体と、電界に
応じて光学異方性が変化する電気光学結晶とを対向配置
し、静電画像電位に応じて電気光学結晶の光学性を変化
させ、電気光学結晶を透過した偏光の偏光状態変化によ
り静電画像を再生する静電画像再生方式において、電気
光学結晶後方に位相補償装置を配置し、静電画像電位O
点位置をシフトさせるようにしたことを特徴とする。In the present invention, a charge retention medium on which an electrostatic image is recorded and an electro-optic crystal whose optical anisotropy changes depending on the electric field are placed facing each other, and the optical properties of the electro-optic crystal are changed depending on the electrostatic image potential. In an electrostatic image reproduction method that reproduces an electrostatic image by changing the polarization state of polarized light transmitted through an electro-optic crystal, a phase compensator is placed behind the electro-optic crystal, and the electrostatic image potential O
The feature is that the point position is shifted.
本発明は静電潜像に対応した電界が印加された電気光学
結晶に対して適当な位相補償をした偏光を照射させ、偏
光状態の変化を検出するようにしだも゛のであり、位相
補償装置により潜像表面電位のO点位置を移動させるこ
とにより、潜像表面電位変化に対する透過光量の変化の
大きい部分で画像再生することが可能とt;る。The present invention irradiates polarized light with appropriate phase compensation onto an electro-optic crystal to which an electric field corresponding to an electrostatic latent image is applied, and detects changes in the polarization state, and uses a phase compensation device. By moving the O point position of the latent image surface potential, it is possible to reproduce an image in a portion where the amount of transmitted light changes largely with respect to a change in the latent image surface potential.
以下、実施例を図面を参照して説明する。 Examples will be described below with reference to the drawings.
第1図は本発明の画像再生を説明するための図で、第4
図と同一番号は同一内容を示している。FIG. 1 is a diagram for explaining image reproduction according to the present invention.
The same numbers as in the figure indicate the same contents.
なお、3は位相補償装置、3aは電気光学結晶、3b、
3cは透明電極、■は可変直流電源である。In addition, 3 is a phase compensation device, 3a is an electro-optic crystal, 3b,
3c is a transparent electrode, and ■ is a variable DC power supply.
光源1からの光はポラライザ2により所定偏光角の直線
偏光のみが取り出され、この直線偏光は可変直流電源V
により所定の電圧が印加されている電気光学結晶3から
なる位相補償装置を通って所定角だけ位相が変化し、こ
の状態で電気光学結晶4に照射される。そして電気光学
結晶4、電荷保持媒体5を透過した光はアナライザ6で
その変化分が検出される。From the light from the light source 1, only the linearly polarized light with a predetermined polarization angle is extracted by the polarizer 2, and this linearly polarized light is sent to the variable DC power supply V.
As a result, the phase of the light changes by a predetermined angle through a phase compensator made of electro-optic crystal 3 to which a predetermined voltage is applied, and the electro-optic crystal 4 is irradiated in this state. The light transmitted through the electro-optic crystal 4 and the charge holding medium 5 is detected by an analyzer 6 for a change in the light.
前述したようにアナライザ6から検出される成分は電気
光学結晶4による位相変化をΔφ、電気光学結晶3によ
る位相変化をθとすると、sin” (Δφ/2+θ)
となる。前述したようにΔφは電気光学結晶4に加えら
れる電界の大きさに対応し、△φ−0、すなわち第2図
のθの位置が潜像表面電位OVに対応し、従って、潜像
表面電位の0点位置がθの位置に移動したことになり、
この位置においては、電位変化に対する透過光量変化が
大きいので、充分検出して静電画像を可視化することが
可能である。なお、θをあまり大きくすると、アナライ
ザ6を透過する全光量が大きくなり、透過全光量に対す
る光量変化分が小さくなって検出感度が低下するので、
θはあまり大きくない値に設定する必要がある。As mentioned above, the component detected by the analyzer 6 is sin'' (Δφ/2+θ) where Δφ is the phase change caused by the electro-optic crystal 4 and θ is the phase change caused by the electro-optic crystal 3.As mentioned above, Δφ is Corresponding to the magnitude of the electric field applied to the electro-optic crystal 4, △φ-0, that is, the position of θ in FIG. 2 corresponds to the latent image surface potential OV. This means that it has moved to the position of
At this position, since the amount of transmitted light changes greatly with respect to potential changes, it is possible to sufficiently detect and visualize the electrostatic image. Note that if θ is too large, the total amount of light transmitted through the analyzer 6 will increase, and the amount of change in light amount relative to the total amount of transmitted light will become small, resulting in a decrease in detection sensitivity.
θ needs to be set to a value that is not too large.
本実施例においては、第1図の電気光学結晶3において
厚みの変化があったとしても、位相差Δφは(1)式に
示すように電界と厚みとの積に依存し、厚みが小さけれ
ば電界が大きくなり、厚みが大きければ電界が小さくな
るため、厚みの変化が検出出力に表われないので、電気
光学結晶には精緻な加工精度が要求されないというメリ
ットがある。In this example, even if there is a change in thickness in the electro-optic crystal 3 shown in FIG. The electric field becomes larger, and the larger the thickness, the smaller the electric field, so changes in thickness do not appear in the detection output, so electro-optic crystals have the advantage of not requiring precise processing accuracy.
なお、上記実施例では位相補償装置として電気光学結晶
を用いたが、第3図に示すように模型の光学異方性結晶
11.12を相互にスライドさせて、板厚を変えるよう
にした可変位相板を用いて位相補償するようにしてもよ
く、また、λ/n板(nは整数)を用いることも可能で
ある。In the above embodiment, an electro-optic crystal was used as the phase compensation device, but as shown in FIG. Phase compensation may be performed using a phase plate, and it is also possible to use a λ/n plate (n is an integer).
また、第1図の電気光学結晶3が自然複屈折性がある場
合には、一方の軸の屈折率をnl、これと直交する軸の
屈折率をn2、厚さをdとすると、(2π/λ)(nl
−n2)dの位相変化が生じ、これがばらつくと画像の
濃淡として検出されてしまうので、なるべく自然複屈折
性のないものが望ましい。In addition, when the electro-optic crystal 3 shown in FIG. 1 has natural birefringence, if the refractive index of one axis is nl, the refractive index of the axis perpendicular to this is n2, and the thickness is d, then (2π /λ)(nl
-n2)d phase change occurs, and if this varies, it will be detected as shading of the image, so it is desirable to have as little natural birefringence as possible.
このような材料としては、KDP (KH,PO、)、
KD2P○、、ADP (NH,H,PO、)CuCC
ZnS、ZnTe、CdTe、GaP、GaAs、BS
O(B i 125 i 020)、BG○(Bi、、
G e O2,)等がある。Such materials include KDP (KH, PO,),
KD2P○,,ADP (NH,H,PO,)CuCC
ZnS, ZnTe, CdTe, GaP, GaAs, BS
O(B i 125 i 020), BG○(Bi,,
G e O2, ), etc.
以上のように本発明によれば、位相補償した偏光を電気
光学結晶に照射することにより潜像表面電位0点位置を
移動させ、潜像電位変化に対する透過光量変化の大きい
ところで出力が得られるので、小さな潜像表面電位に対
しても大きな透過光量の変化が得られ、精度よく可視化
することが可能となる。As described above, according to the present invention, by irradiating the electro-optic crystal with phase-compensated polarized light, the zero point position of the latent image surface potential is moved, and an output can be obtained at a location where the amount of transmitted light changes largely in response to a change in the latent image potential. , a large change in the amount of transmitted light can be obtained even for a small latent image surface potential, making it possible to visualize with high accuracy.
第1図は本発明の画像再生を説明するための図、第2図
は潜像表面電位0点位置をシフトさせる本発明の詳細な
説明するたtの図、第3図は可変位相板を示す図、第4
図、第5図は従来の潜像可視化方法を説明するための図
である。
1・・・光源、2・・・ポラライザ、3・・・位相補償
装置、3a・・・電気光学結晶、3b、3c・・・透明
電極、■・・・可変直流電源、4・・・電気光学結晶、
5・・・電荷保持媒体、6・・・アナライザ。
第1vA
出 願 人 大日本印刷株式会社代理人 弁理士
蛭 川 昌 信(外7名)(d)
4a・・宅
第3図
第4
図
極
第5図Fig. 1 is a diagram for explaining image reproduction according to the present invention, Fig. 2 is a diagram for explaining in detail the present invention for shifting the zero point position of the latent image surface potential, and Fig. 3 is a diagram for explaining the variable phase plate. Figure shown, 4th
5 are diagrams for explaining a conventional latent image visualization method. DESCRIPTION OF SYMBOLS 1... Light source, 2... Polarizer, 3... Phase compensator, 3a... Electro-optic crystal, 3b, 3c... Transparent electrode, ■... Variable DC power supply, 4... Electricity optical crystal,
5... Charge retention medium, 6... Analyzer. 1vA Applicant Dai Nippon Printing Co., Ltd. Agent Patent Attorney Masanobu Hirukawa (7 others) (d) 4a...Home Figure 3 Figure 4 Figure 5
Claims (3)
て光学異方性が変化する電気光学結晶とを対向配置し、
静電画像電位に応じて電気光学結晶の光学性を変化させ
、電気光学結晶を透過した偏光の偏光状態変化により静
電画像を再生する静電画像再生方式において、電気光学
結晶後方に位相補償装置を配置し、静電画像電位0点位
置をシフトさせるようにしたことを特徴とする静電画像
再生方式。(1) A charge retention medium on which an electrostatic image is recorded and an electro-optic crystal whose optical anisotropy changes depending on the electric field are placed facing each other,
In an electrostatic image reproduction method that changes the optical properties of an electro-optic crystal according to the electrostatic image potential and reproduces an electrostatic image by changing the polarization state of polarized light transmitted through the electro-optic crystal, a phase compensation device is installed behind the electro-optic crystal. An electrostatic image reproduction method characterized in that the electrostatic image potential zero point position is shifted.
極を設け、両電極間に可変直流電源を接続したことを特
徴とする請求項1記載の静電画像再生方式。(2) The electrostatic image reproducing system according to claim 1, wherein the phase compensation device includes transparent electrodes provided on both sides of an electro-optic crystal, and a variable DC power source connected between both electrodes.
nは整数)であることを特徴とする請求項1記載の静電
画像再生方式。(3) The phase compensation device is a variable phase plate or a λ/n plate (
2. The electrostatic image reproducing method according to claim 1, wherein n is an integer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18601890A JPH0470808A (en) | 1990-07-12 | 1990-07-12 | Electrostatic image reproduction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18601890A JPH0470808A (en) | 1990-07-12 | 1990-07-12 | Electrostatic image reproduction method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0470808A true JPH0470808A (en) | 1992-03-05 |
Family
ID=16180952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18601890A Pending JPH0470808A (en) | 1990-07-12 | 1990-07-12 | Electrostatic image reproduction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0470808A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
-
1990
- 1990-07-12 JP JP18601890A patent/JPH0470808A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
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