JPH047104B2 - - Google Patents

Info

Publication number: JPH047104B2
Authority: JP; Japan
Prior art keywords: semiconductor wafer; section; semiconductor; bonded; image
Prior art date: 1986-12-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61307736A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63161637A (ja

Inventor

Hideaki Hayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-12-25

Filing date

1986-12-25

Publication date

1992-02-07

1986-12-25 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1986-12-25 Priority to JP61307736A priority Critical patent/JPS63161637A/ja

1988-07-05 Publication of JPS63161637A publication Critical patent/JPS63161637A/ja

1992-02-07 Publication of JPH047104B2 publication Critical patent/JPH047104B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 90
238000004364 calculation method Methods 0.000 claims description 20
238000005259 measurement Methods 0.000 claims description 16
230000007246 mechanism Effects 0.000 claims description 8
238000006243 chemical reaction Methods 0.000 claims description 4
235000012431 wafers Nutrition 0.000 description 76
238000000034 method Methods 0.000 description 23
238000012937 correction Methods 0.000 description 13
239000000758 substrate Substances 0.000 description 13
230000008569 process Effects 0.000 description 12
239000012535 impurity Substances 0.000 description 5
238000005286 illumination Methods 0.000 description 4
238000012545 processing Methods 0.000 description 4
239000002131 composite material Substances 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
230000015556 catabolic process Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000006870 function Effects 0.000 description 2
238000003384 imaging method Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
238000012546 transfer Methods 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
150000007513 acids Chemical class 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
239000013590 bulk material Substances 0.000 description 1
230000001010 compromised effect Effects 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000018044 dehydration Effects 0.000 description 1
238000006297 dehydration reaction Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000001035 drying Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000003925 fat Substances 0.000 description 1
230000008676 import Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
239000003921 oil Substances 0.000 description 1
238000011017 operating method Methods 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
230000000007 visual effect Effects 0.000 description 1
238000005406 washing Methods 0.000 description 1

Landscapes

Length Measuring Devices By Optical Means (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Control Of Position Or Direction (AREA)

JP61307736A 1986-12-25 1986-12-25 半導体ウエ−ハの位置認識装置 Granted JPS63161637A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61307736A JPS63161637A (ja)	1986-12-25	1986-12-25	半導体ウエ−ハの位置認識装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61307736A JPS63161637A (ja)	1986-12-25	1986-12-25	半導体ウエ−ハの位置認識装置

Publications (2)

Publication Number	Publication Date
JPS63161637A JPS63161637A (ja)	1988-07-05
JPH047104B2 true JPH047104B2 (2)	1992-02-07

Family

ID=17972641

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61307736A Granted JPS63161637A (ja)	1986-12-25	1986-12-25	半導体ウエ−ハの位置認識装置

Country Status (1)

Country	Link
JP (1)	JPS63161637A (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2667460B2 (ja) *	1988-08-16	1997-10-27	株式会社東芝	非接触ウェハー中心位置検出装置
JP5233012B2 (ja) *	2008-10-03	2013-07-10	日新イオン機器株式会社	イオン注入装置
JP6075993B2 (ja) *	2012-08-02	2017-02-08	株式会社ディスコ	板状ワーク中心検出方法
US10984524B2 (en) *	2017-12-21	2021-04-20	Advanced Ion Beam Technology, Inc.	Calibration system with at least one camera and method thereof

1986
- 1986-12-25 JP JP61307736A patent/JPS63161637A/ja active Granted

Also Published As

Publication number	Publication date
JPS63161637A (ja)	1988-07-05

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Legal Events

Date	Code	Title	Description
2005-02-07	LAPS	Cancellation because of no payment of annual fees